Growth method of inGaAsP epitaxial wafer and epitaxial wafer

Abstract

Embodiments of the present application relate to a growth method of an InGaAsP epitaxial wafer and an InGaAsP epitaxial wafer. Theoretical values of x and y conforming to a target wavelength of a required device are first determined, and epitaxial growth is performed according to the theoretical values of x and y. The InGaAsP epitaxial wafer obtained by growth is detected. The theoretical value of y is first corrected, and the theoretical value of x is re-determined according to the corrected theoretical value of y until the theoretical value of y corresponding to a relationship between an actual wavelength and the target wavelength conforms to a preset requirement. Then, the theoretical value of x is corrected until the theoretical value of x corresponding to a lattice quality reaching a preset standard is obtained. Precise control of the wavelength of the InGaAsP material and complete adaptation of the lattice of the epitaxial layer InGaAsP material and the substrate InP material are achieved. x Ga 1‑x As y P 1‑y ​

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method for growing InGaAsP epitaxial wafers and the InGaAsP epitaxial wafers themselves. Background Technology

[0002] InGaAsP (Indium Gallium Arsenide Phosphorus, or In...) x Ga 1-x As y P 1-y InGaAsP, where x, 1-x, y, and 1-y are the components of In, Ga, As, and P respectively, is a quaternary solid solution composed of InAs, InP, GaAs, and GaP. It belongs to the direct bandgap semiconductor material category and has high photoelectric conversion efficiency, thus finding wide application in optoelectronics and communications. Electrons and holes injected into InGaAsP can directly recombine radiatively, generating significant gain and reaching the lasing threshold. Furthermore, this material has a narrow bandgap; by adjusting the composition of x and y, it is possible to cover a wavelength range from 0.870 μm (GaAs) to 3.5 μm (InAs). Because this range includes the 1.3 μm and 1.55 μm wavelengths of silica optical fiber—two windows of low dispersion and low loss—InGaAsP quantum well material is primarily used in 1.3 μm and 1.55 μm semiconductor light sources for optical fiber communication. By adjusting the values ​​of x and y, perfect lattice matching with the InP substrate can also be achieved. For InGaAsP / InP material systems (i.e., InGaAsP layers epitaxially grown on InP substrates), the emission wavelength of materials that match the InP lattice is 1.1 μm to 1.65 μm. InGaAsP quantum wells have significant application potential in C-band communication and 1.55 μm near-infrared devices (such as photodetectors and lasers).

[0003] With the continuous development of optoelectronic and communication technologies, the demand for high-performance semiconductor materials is increasing. In the optoelectronic field, the development of high-performance lasers requires materials capable of precisely controlling the emission wavelength to achieve characteristics such as high quantum efficiency and low threshold current. In the communication field, the development of wavelength division multiplexing (WDM) technology requires light sources with precisely controllable wavelengths to increase communication channels, improve system stability, optimize the coupling efficiency between the light source and optical fiber, reduce costs, and improve signal transmission quality. However, currently, not only is it difficult to precisely control the wavelength of materials, but the process of adjusting the material composition to achieve the target wavelength often leads to changes in the lattice constant, causing lattice mismatch between the epitaxial layer and the substrate, resulting in stress problems, and ultimately affecting the performance and stability of the device. Therefore, there is currently a challenge in simultaneously achieving precise wavelength control and ensuring good lattice quality. Summary of the Invention

[0004] In view of this, the present application provides a method for growing InGaAsP epitaxial wafers and an InGaAsP epitaxial wafer to solve at least one problem existing in the background art.

[0005] In a first aspect, embodiments of this application provide a method for growing InGaAsP epitaxial wafers, including:

[0006] Determine In based on the target wavelength of the device to be fabricated. x Ga 1-x As y P 1-y The target bandgap of the layer, where 0 <x<1,0<y<1;

[0007] Based on the empirical relationship between band gap and γ, the theoretical value of γ corresponding to the target band gap is determined. Then, based on the theoretical value of γ and the lattice constant of the InP substrate, the value of γ when InP is at its maximum is determined. x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the substrate is equal to that of the InP substrate;

[0008] Determine In based on the theoretical values ​​of x and y. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer are determined, and In is grown on an InP substrate using the epitaxial growth conditions. x Ga 1-x As y P 1-y layer;

[0009] In obtained from growth x Ga 1-x As y P 1-y The layer performs a first detection. Based on the first detection result, it determines whether the relationship between the actual wavelength and the target wavelength meets the preset requirements. If not, it corrects the theoretical value of y and redetermines the value of In based on the corrected theoretical value of y. x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the layer is equal to that of the InP substrate is determined. Based on the newly determined theoretical value of x and the corrected theoretical value of y, the InP layer is redefined. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined elongation growth conditions. x Ga 1-x Asy P 1-y The process continues until the relationship between the actual wavelength and the target wavelength meets the preset requirements, and the theoretical value of y at this point is recorded as y0;

[0010] The latest growth of In x Ga 1-x As y P 1-y The layer undergoes a second test. Based on the result of this second test, it is determined whether the lattice quality meets the preset standard. If it does not, the theoretical value of x is corrected, and In is redefined based on the corrected theoretical value of x and y0. x Ga 1-x As y P 1-y The extended growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined extended growth conditions. x Ga 1-x As y P 1-y Layer by layer until the lattice quality reaches the preset standard, and the theoretical value of x at this time is recorded as x0;

[0011] The elongation growth conditions corresponding to x0 and y0 are determined to be In corresponding to the target wavelength of the device to be fabricated. x Ga 1-x As y P 1-y The conditions for the extended growth of the layer.

[0012] In conjunction with the first aspect of this application, in an optional embodiment, the first detection includes photoluminescence detection, and / or the second detection includes surface particle size scanner detection.

[0013] In conjunction with the first aspect of this application, in an optional embodiment, the step of determining whether the relationship between the actual wavelength and the target wavelength meets preset requirements based on the first detection result, and correcting the theoretical value of y if it does not, includes:

[0014] If the preset requirements are not met and the actual wavelength is greater than the target wavelength, then the theoretical value of y is corrected in the direction of increase;

[0015] If the preset requirements are not met and the actual wavelength is less than the target wavelength, the theoretical value of y is corrected in the direction of reduction.

[0016] In conjunction with the first aspect of this application, in an optional embodiment, the second detection includes surface particle size scanner detection; the second detection result includes a Haze value; the preset standard is that the Haze value is less than or equal to 10 ppm.

[0017] In conjunction with the first aspect of this application, in an optional embodiment, the method further includes:

[0018] In obtained from growth x Ga 1-x As y P 1-y The third layer is subjected to a third test, and the results of the third test include the component detection information of four elements: In, Ga, As, and P.

[0019] The magnitude of the correction in the step of correcting the theoretical value of y and / or the theoretical value of x is determined based on the component detection information.

[0020] In conjunction with the first aspect of this application, in an alternative embodiment, the third detection includes X-ray diffraction detection.

[0021] In conjunction with the first aspect of this application, in an alternative embodiment, the empirical relationship between the band gap and y is obtained by fitting a series of detection data from InGaAsP epitaxial wafers.

[0022] In conjunction with the first aspect of this application, in an optional embodiment, the empirical relationship between the band gap and y is: Eg = 1.35 - 0.72y + 0.12y 2 eV; where Eg represents the band gap.

[0023] In conjunction with the first aspect of this application, in an alternative embodiment, the determination of when In... x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the ion is equal to that of the InP substrate is determined based on the following formula:

[0024] a(x,y)=(1-x)*y*a(GaAs)+(1-x)*(1-y)*a(GaP)+x*y*a(InAs)+x*(1-y)*a(InP);

[0025] Where a(x, y) represents In x Ga 1-x As y P 1-y The lattice constant of In and let In x Ga 1-x As y P 1-y The lattice constant of GaAs is equal to that of the InP substrate. a(GaAs) represents the lattice constant of GaAs, a(GaP) represents the lattice constant of GaP, a(InAs) represents the lattice constant of InAs, and a(InP) represents the lattice constant of InP.

[0026] Secondly, embodiments of this application provide an InGaAsP epitaxial wafer, which is prepared using the InGaAsP epitaxial wafer growth method described in any one of the first aspects.

[0027] The beneficial effects of the embodiments of this application are as follows:

[0028] The InGaAsP epitaxial wafer growth method and InGaAsP epitaxial wafer provided in this application embodiment first determine the theoretical values ​​of x and y that meet the target wavelength of the desired device, and then perform epitaxial growth based on the theoretical values ​​of x and y. The resulting InGaAsP epitaxial wafer is then processed... x Ga 1-x As y P 1-y The method involves detecting the InGaAsP layer by first correcting the theoretical value of y, and then re-determining the theoretical value of x based on the corrected theoretical value of y. This process continues until the theoretical value of y is obtained when the relationship between the actual wavelength and the target wavelength meets the preset requirements. For example, the theoretical value of y (y0) is obtained when the actual wavelength is equal to the target wavelength or the deviation between the two is within a certain range. By adjusting the ratio of As and P components, precise control of the wavelength of the InGaAsP material is achieved, providing a reliable guarantee for the manufacturing of high-performance devices. Then, the ratio of As and P components is fixed, and the theoretical value of x is corrected again until the theoretical value of x is obtained when the lattice quality meets the preset standard. This achieves complete lattice matching between the epitaxial InGaAsP material and the substrate InP material, avoiding stress problems caused by lattice constant mismatch, improving the performance and stability of the device, and extending the device's lifespan. In addition, this method is easy to operate and implement, providing convenience for large-scale production and application.

[0029] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0030] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0031] Figure 1 This is a schematic diagram of the cross-sectional structure of an InGaAsP epitaxial wafer.

[0032] Figure 2 This is a schematic flowchart of the InGaAsP epitaxial wafer growth method provided in the embodiments of this application. Detailed Implementation

[0033] Exemplary embodiments of the present application will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope of the disclosure of the present application to those skilled in the art.

[0034] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, to avoid confusion with this application, some technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0035] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0036] When an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. Although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0037] Spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. In addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “below,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0038] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0039] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solution of this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0040] This application provides a method for growing InGaAsP epitaxial wafers, specifically a method for growing InGaAsP epitaxial layers on InP substrates.

[0041] Please refer to Figure 1 The InGaAsP epitaxial wafer may include an InP substrate 100 and an InGaAsP epitaxial wafer formed on the InP substrate 100 by an epitaxial growth process. x Ga 1-x As y P 1-y Layer 120. The epitaxial growth process can be achieved using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). To alleviate lattice mismatch and thermal stress, and optimize interface quality, an InP buffer layer 110 can be grown first on the InP substrate 100, and then InP can be grown on the InP buffer layer 110. x Ga 1-xAs y P 1-y Layer 120.

[0042] In x Ga 1-x As y P 1-y wherein x represents the composition of In, 1-x represents the composition of Ga, y represents the composition of As, and 1-y represents the composition of P; 0<x<1, 0<y<1. The compositions of the elements, that is, the values of x and y, have a significant effect on the material properties of In x Ga 1-x As y P 1-y has a significant impact on the material properties of the material. By adjusting x and y in In x Ga 1-x As y P 1-y precise regulation of the lattice constant, wavelength (or band gap), and even the optical and electrical properties of the material can be achieved.

[0043] In order to achieve precise control of the wavelength, while taking into account both precise wavelength control and good lattice quality, embodiments of the present application provide a method for growing an InGaAsP epitaxial wafer, please refer to Figure 2 , specifically, the method comprises:

[0044] S01: Determine the target band gap of the In x Ga 1-x As y P 1-y layer according to the target wavelength of the device to be prepared, wherein 0<x<1, 0<y<1;

[0045] S02: Determine a theoretical value of y corresponding to the target band gap based on an empirical relational expression between band gap and y, and determine, according to the theoretical value of y and the lattice constant of the InP substrate, the theoretical value of x when the lattice constant of In x Ga 1-x As y P 1-y is equal to the lattice constant of the InP substrate;

[0046] S03: Determine the epitaxial growth conditions of the In x Ga 1-x As y P 1-y layer according to the theoretical value of x and the theoretical value of y, and grow the In x Ga 1-x As y P 1-y layer on the InP substrate by using the epitaxial growth conditions;

[0047] S04, the In obtained from growth x Ga 1-x As y P 1-y The layer performs a first detection. Based on the first detection result, it determines whether the relationship between the actual wavelength and the target wavelength meets the preset requirements. If not, it corrects the theoretical value of y and redetermines the value of In based on the corrected theoretical value of y. x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the layer is equal to that of the InP substrate is determined. Based on the newly determined theoretical value of x and the corrected theoretical value of y, the InP layer is redefined. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined elongation growth conditions. x Ga 1-x As y P 1-y The process continues until the relationship between the actual wavelength and the target wavelength meets the preset requirements, and the theoretical value of y at this point is recorded as y0;

[0048] S05, regarding the newly grown In x Ga 1-x As y P 1-y The layer undergoes a second test. Based on the result of this second test, it is determined whether the lattice quality meets the preset standard. If it does not, the theoretical value of x is corrected, and In is redefined based on the corrected theoretical value of x and y0. x Ga 1-x As y P 1-y The extended growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined extended growth conditions. x Ga 1-x As y P 1-y Layer by layer until the lattice quality reaches the preset standard, and the theoretical value of x at this time is recorded as x0;

[0049] S06. Determine the elongation growth conditions corresponding to x0 and y0 as In corresponding to the target wavelength of the device to be fabricated. x Ga 1-x As y P 1-y The conditions for the extended growth of the layer.

[0050] Understandably, embodiments of this application first determine the theoretical values ​​of x and y that meet the target wavelength required for fabricating the device, and then perform epitaxial growth based on the theoretical values ​​of x and y. The resulting In... x Ga 1- x As y P 1-y The method involves detecting the layer by first correcting the theoretical value of y, and then redetermining the theoretical value of x based on the corrected theoretical value of y, until the theoretical value of y corresponding to the relationship between the actual wavelength and the target wavelength meets the preset requirements is obtained. For example, the theoretical value of y (y0) is obtained when the actual wavelength is equal to the target wavelength or the deviation between the two is within a certain range. By adjusting the ratio of As and P components, the problem of precise wavelength control in the growth of InGaAsP materials is successfully solved, enabling more accurate fulfillment of specific wavelength requirements in optoelectronic and communication fields, and providing a reliable guarantee for the manufacture of high-performance devices. Then, the ratio of As and P components is fixed, and the theoretical value of x is corrected again until the theoretical value of x that meets the preset standard of lattice quality is obtained. This achieves complete lattice matching between the epitaxial InGaAsP material and the substrate InP material, avoiding stress problems caused by lattice constant mismatch, improving device performance and stability, and extending device lifespan. In addition, this method is easy to operate and implement, providing convenience for large-scale production and application.

[0051] Next, the various steps of the InGaAsP epitaxial wafer growth method in the embodiments of this application will be described in further detail.

[0052] First, in step S01, the target wavelength for the device to be fabricated is the wavelength at which In is epitaxially grown. x Ga 1-x As y P 1-y The target wavelength for the layer. This target wavelength can be in the range of 1100nm to 1650nm.

[0053] In is determined based on the target wavelength. x Ga 1-x As y P 1-y The target band gap of the layer is determined based on the following formula (hereinafter referred to as Formula 1): λ = h * c / Eg; where λ represents the wavelength, h represents Planck's constant (h is a constant), c represents the speed of light (c is also a constant), and Eg represents the band gap. As can be seen from this formula, the wavelength is inversely proportional to the band gap. When the target wavelength is substituted into λ, the calculated Eg is the target band gap.

[0054] Then, step S02 is executed. First, the theoretical value of y corresponding to the target bandgap is determined based on the empirical relationship between bandgap and y. This empirical relationship is obtained by fitting detection data from a series of InGaAsP epitaxial wafers. Specifically, a series of samples are prepared, each sample being In epitaxially grown on an InP substrate. x Ga 1-x As y P 1-y The sample is divided into layers, and the difference between each sample lies in the fact that at least one of x and y is different, that is, the elemental composition of each sample is different (in actual preparation, the x and y values ​​can be set and adjusted according to certain rules); then each sample is tested, and the lattice parameters and band gap detection data corresponding to the samples with different compositions are recorded. The wavelength corresponding to the band gap and the lattice parameters calculated according to Vegard's law can also be recorded; finally, the data are fitted to obtain the empirical relationship between the band gap and y.

[0055] In a specific embodiment, the empirical relationship between the band gap and y is as follows:

[0056] Eg = 1.35 - 0.72y + 0.12y 2 eV (Formula 2).

[0057] For example, when the target wavelength is 1310nm, the corresponding target bandgap can be calculated to be approximately 0.946eV. Substituting the target bandgap of 0.946eV into the empirical relationship between bandgap and y, the theoretical value of y can be calculated to be approximately 0.65.

[0058] Next, based on the theoretical value of y and the lattice constant of the InP substrate, determine when In x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the ion is equal to that of the InP substrate is determined specifically based on the following formula:

[0059] a(x, y)=(1-x)*y*a(GaAs)+(1-x)*(1-y)*a(GaP)+x*y*a(InAs)+x*(1-y)*a(InP) (Formula 3);

[0060] Where a(x, y) represents In x Ga 1-x As y P 1-y The lattice constant of In and let In x Ga 1-x As y P 1-yThe lattice constant of GaAs is equal to that of the InP substrate. a(GaAs) represents the lattice constant of GaAs, a(GaP) represents the lattice constant of GaP, a(InAs) represents the lattice constant of InAs, and a(InP) represents the lattice constant of InP.

[0061] For example, the theoretical value of y is 0.65; it is known that... In x Ga 1-x As y P 1-y The lattice constant of the substrate is equal to that of the InP substrate, that is, let Substituting y = 0.65 into Formula 3 above, we obtain a theoretical value of x of approximately 0.53. Therefore, the In to be grown next... x Ga 1- x As y P 1-y Specifically, In 0.53 Ga 0.47 As 0.65 P 0.35 .

[0062] Next, in step S03, In is grown on the InP substrate. x Ga 1-x As y P 1-y Specifically, this can be achieved by first growing an InP buffer layer on an InP substrate, and then growing In on the InP buffer layer. x Ga 1-x As y P 1-y This application does not specifically limit the layers.

[0063] Determine In based on the theoretical values ​​of x and y. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer can be determined based on the technicians' routine operations and the specific conditions of the equipment. In the actual preparation process, the technicians edit the recipe (growth program) based on the theoretical values ​​of x and y, and then control the equipment to execute the epitaxial growth process to obtain epitaxial wafer samples.

[0064] After growth is complete, the epitaxial wafer sample is removed. In step S04, the grown In... x Ga 1-x As y P 1-y The layer (i.e., the epitaxial wafer sample) is tested to obtain various test data (i.e., test results).

[0065] The detection can include detection targeting the actual wavelength, either by directly obtaining the actual wavelength value or by obtaining other wavelength-related data, and then evaluating the wavelength based on the other data. This detection will be referred to as the first detection below.

[0066] The first detection may specifically include photoluminescence detection (PL detection). Of course, this application does not exclude the possibility that the first detection may be Raman spectroscopy detection, etc.

[0067] Based on the first detection result, determine whether the relationship between the actual wavelength and the target wavelength meets the preset requirements. If not, correct the theoretical value of y. Specifically, the preset requirements can be that the actual wavelength and the target wavelength are exactly equal, or that the deviation between them is within a reasonable range. This reasonable range can be set by technicians according to actual needs.

[0068] If the preset requirements are not met and the actual wavelength is greater than the target wavelength, the theoretical value of y is corrected in the direction of increase. If the preset requirements are not met and the actual wavelength is less than the target wavelength, the theoretical value of y is corrected in the direction of decrease.

[0069] For example, suppose the preset requirement is that the actual wavelength is exactly equal to the target wavelength, and the target wavelength is 1310 nm. If the actual wavelength is also 1310 nm, then there is no need to correct the theoretical value of y, and the theoretical value of y for growing this sample, 0.65, is recorded as y0; if the actual wavelength is 1310.4 nm, then the theoretical value of y is corrected in the direction of increase, that is, the corrected theoretical value of y is greater than 0.65; if the actual wavelength is 1309.6 nm, then the theoretical value of y is corrected in the direction of decrease, that is, the corrected theoretical value of y is less than 0.65.

[0070] The specific extent of the correction can be determined based on the experience of technical personnel or on other test results.

[0071] For example, suppose the preset requirement is that the deviation between the actual wavelength and the target wavelength does not exceed 0.5 nm, and the target wavelength is 1310 nm. If the actual wavelength is 1310 nm, or 1310.4 nm, or 1309.6 nm, there is no need to correct the theoretical value of y; the theoretical value of y for growing this sample, 0.65, is recorded as y0. If the actual wavelength is 1311 nm, the theoretical value of y is corrected in the direction of increase, that is, the corrected theoretical value of y is greater than 0.65. If the actual wavelength is 1309 nm, the theoretical value of y is corrected in the direction of decrease, that is, the corrected theoretical value of y is less than 0.65.

[0072] The method may also include: processing the grown In x Ga 1-x As y P 1-yThe layer undergoes a third detection, the results of which include compositional information for four elements: In, Ga, As, and P. Specifically, the third detection may include, for example, X-ray diffraction (XRD) detection.

[0073] Although the tests are distinguished by the terms "first test," "second test," and "third test," it should be noted that the numbering does not restrict the order of the tests. Each test can be performed in any order depending on the actual situation. For example, the third test can be performed before the first test, or the tests can be performed simultaneously. This application does not impose any specific restrictions on this.

[0074] The third detection method allows for the estimation of actual component values ​​(As%, P%, In%, Ga%) to be obtained (i.e., component detection information). It should be noted that although technicians edit the recipe based on the theoretical values ​​of x and y, the actual epitaxial wafer samples prepared may not perfectly match the theoretical values ​​due to equipment limitations. In such cases, the third detection method provides the actual component values. The correction magnitude in steps involving correcting the theoretical value of y and / or subsequently correcting the theoretical value of x can be determined based on the component detection information.

[0075] Furthermore, a third test can be performed on a series of epitaxial wafer samples to obtain the relationship between each theoretical value and the detection information of each component, and the correction range can be determined based on this relationship.

[0076] In other words, the magnitude of the correction is determined based on the component detection information, including both the component detection information itself and the relationship between a series of component detection information.

[0077] Next, based on the corrected theoretical value of y, the value of when In is redefined. x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the layer is equal to that of the InP substrate.

[0078] For example, the theoretical value of the corrected y is 0.68. Substituting this value into Formula 3, the theoretical value of x is recalculated, and the newly determined theoretical value of x is approximately 0.55.

[0079] Based on the redefined theoretical value of x and the corrected theoretical value of y, In is redefined. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined elongation growth conditions. x Ga 1-x As y P 1-yLayer. This step can be referred to step S03, and will not be repeated here.

[0080] Next, repeat step S04 to process the In obtained from the growth. x Ga 1-x As y P 1-y The layer performs detection until the relationship between the actual wavelength and the target wavelength meets the preset requirements, and the theoretical value of y at this point is recorded as y0. In other words, y0 represents the theoretical value of y corresponding to the relationship between the actual wavelength and the target wavelength meeting the preset requirements.

[0081] In this way, the composition ratio of As and P can be fixed, thereby achieving precise control of the wavelength of InGaAsP material. This avoids the situation where the lattice constant is consistent but the wavelength is not when x and y are adjusted simultaneously, and the wavelength finally becomes consistent but the lattice constant is not consistent again.

[0082] Next, step S05 is performed to process the newly grown In. x Ga 1-x As y P 1-y A second inspection is performed on the layer to determine whether the lattice quality meets the preset standard based on the results of the second inspection. The second inspection may include surface particle size scanner inspection (surfscan inspection), and this application does not exclude the possibility that the second inspection may include atomic force microscopy inspection, etc.

[0083] In one specific embodiment, the second detection includes surface particle size scanner detection; the second detection result includes haze value; the preset standard can be a haze value less than or equal to 10 ppm.

[0084] If the theoretical value of x is not reached, then the theoretical value of x is adjusted. Conversely, if the theoretical value of x is reached, then the theoretical value of x at this time is recorded as x0.

[0085] The theoretical value of the correction x can be determined based on the component detection information of the third detection; of course, it can also be determined based on the experience of technical personnel.

[0086] The latest growth of In x Ga 1-x As y P 1-y In addition to the second test, other tests can also be performed on the layer, such as a third test, or even a first test, to help technicians better understand the relationship between the epitaxial growth conditions used and the actual condition of the grown sample. It should also be noted that the order of the tests can be determined based on the actual situation, and this application does not impose any specific restrictions on this.

[0087] As a feasible specific implementation method, the theoretical value of x is determined based on the component detection information of the third detection; specifically, the theoretical value of x at this time is compared with the component detection information of In and / or Ga in the third detection result to determine whether to correct the theoretical value of x in the direction of increase or decrease and the magnitude of increase or decrease.

[0088] Next, based on the corrected theoretical value of x and y0, In is redefined. x Ga 1-x As y P 1-y The extended growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined extended growth conditions. x Ga 1-x As y P 1-y Layer. This step can be referred to step S03, and will not be repeated here.

[0089] Next, repeat step S05 until the lattice quality reaches the preset standard, and record the theoretical value of x at this time as x0; in other words, x0 represents the theoretical value of x when the lattice quality reaches the preset standard.

[0090] Finally, step S06 is executed to determine the elongation growth conditions corresponding to x0 and y0 as In corresponding to the target wavelength of the device to be fabricated. x Ga 1-x As y P 1-y The conditions for the extended growth of the layer.

[0091] When it is necessary to grow an InGaAsP epitaxial wafer with the target wavelength in the future, this extended growth condition can be used.

[0092] Specifically, the method may further include: utilizing the In corresponding to the target wavelength of the desired fabricated device. x Ga 1- x As y P 1-y Epitaxial growth conditions for InP substrates x Ga 1-x As y P 1-y On the one hand, it successfully solved the problem of precise wavelength control in the growth of InGaAsP epitaxial wafers, enabling more accurate fulfillment of specific wavelength requirements in optoelectronics and communications, and providing a reliable guarantee for the manufacture of high-performance devices; on the other hand, it achieved complete matching with the lattice constant of the InP substrate, avoiding stress problems caused by lattice constant mismatch, improving device performance and stability, and extending device lifespan.

[0093] Building upon this, this application also provides an InGaAsP epitaxial wafer, prepared using the InGaAsP epitaxial wafer growth method described in any of the foregoing embodiments. This InGaAsP epitaxial wafer thus provides a reliable guarantee for the manufacture of high-performance devices, improving device performance and stability, and extending device lifespan.

[0094] It should be noted that the embodiments of InGaAsP epitaxial wafers provided in this application and the embodiments of the growth method of InGaAsP epitaxial wafers belong to the same concept; the technical features in the technical solutions described in each embodiment can be arbitrarily combined without conflict.

[0095] It should be understood that the above embodiments are exemplary and not intended to encompass all possible implementations. Various modifications and changes can be made to the above embodiments without departing from the scope of this disclosure. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of this application that may not be explicitly described. Therefore, the above embodiments only illustrate several implementations of this application and do not limit the scope of protection of this patent application.

Claims

1. A method for growing InGaAsP epitaxial wafers, characterized in that, include: Determine In based on the target wavelength of the device to be fabricated. x Ga 1-x As y P 1-y The target bandgap of the layer, where 0 <x<1,0<y<1; Based on the empirical relationship between band gap and γ, the theoretical value of γ corresponding to the target band gap is determined. Then, based on the theoretical value of γ and the lattice constant of the InP substrate, the value of γ when InP is at its maximum is determined. x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the substrate is equal to that of the InP substrate; Determine In based on the theoretical values ​​of x and y. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer are determined, and In is grown on an InP substrate using the epitaxial growth conditions. x Ga 1-x As y P 1-y layer; In obtained from growth x Ga 1-x As y P 1-y The layer performs a first detection. Based on the first detection result, it determines whether the relationship between the actual wavelength and the target wavelength meets the preset requirements. If not, it corrects the theoretical value of y and redetermines the value of In based on the corrected theoretical value of y. x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the layer is equal to that of the InP substrate is determined. Based on the newly determined theoretical value of x and the corrected theoretical value of y, the InP layer is redefined. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined epitaxial growth conditions. x Ga 1-x As y P 1-y The process continues until the relationship between the actual wavelength and the target wavelength meets the preset requirements, and the theoretical value of y at this point is recorded as y0; The latest growth of In x Ga 1-x As y P 1-y The layer undergoes a second test. Based on the result of this second test, it is determined whether the lattice quality meets the preset standard. If it does not, the theoretical value of x is corrected, and In is redefined based on the corrected theoretical value of x and y0. x Ga 1-x As y P 1-y The epitaxial growth conditions of the layer were determined, and In was grown on an InP substrate using the newly determined epitaxial growth conditions. x Ga 1-x As y P 1-y Layer by layer until the lattice quality reaches the preset standard, and the theoretical value of x at this time is recorded as x0; The epitaxial growth conditions corresponding to x0 and y0 are determined to be In corresponding to the target wavelength of the device to be fabricated. x Ga 1- x As y P 1-y Epitaxial growth conditions of the layer.

2. The method for growing InGaAsP epitaxial wafers according to claim 1, characterized in that, The first detection includes photoluminescence detection, and / or the second detection includes surface particle size scanner detection.

3. The method for growing InGaAsP epitaxial wafers according to claim 1, characterized in that, The step of determining whether the relationship between the actual wavelength and the target wavelength meets the preset requirements based on the first detection result, and if not, correcting the theoretical value of y, includes: If the preset requirements are not met and the actual wavelength is greater than the target wavelength, then the theoretical value of y is corrected in the direction of increase; If the preset requirements are not met and the actual wavelength is less than the target wavelength, the theoretical value of y is corrected in the direction of reduction.

4. The method for growing InGaAsP epitaxial wafers according to claim 1, characterized in that, The second detection includes surface particle size scanner detection; the second detection result includes a haze value; the preset standard is a haze value less than or equal to 10 ppm.

5. The method for growing InGaAsP epitaxial wafers according to claim 1, characterized in that, The method further includes: In obtained from growth x Ga 1-x As y P 1-y The third layer is subjected to a third test, and the results of the third test include the component detection information of four elements: In, Ga, As, and P. The magnitude of the correction in the step of correcting the theoretical value of y and / or the theoretical value of x is determined based on the component detection information.

6. The method for growing InGaAsP epitaxial wafers according to claim 5, characterized in that, The third detection includes X-ray diffraction.

7. The method for growing InGaAsP epitaxial wafers according to claim 1, characterized in that, The empirical relationship between the band gap and y was obtained by fitting a series of detection data from InGaAsP epitaxial wafers.

8. The method for growing InGaAsP epitaxial wafers according to claim 1 or 7, characterized in that, The empirical relationship between the band gap and y is: Eg = 1.35 - 0.72y + 0.12y 2 eV; where Eg represents the band gap.

9. The method for growing InGaAsP epitaxial wafers according to claim 1, characterized in that, The determination of when In is based on the theoretical value of y and the lattice constant of the InP substrate. x Ga 1-x As y P 1-y The theoretical value of x when the lattice constant of the ion is equal to that of the InP substrate is determined based on the following formula: a(x,y)=(1-x)*y*a(GaAs)+(1-x)*(1-y)*a(GaP)+x*y*a(InAs)+x*(1-y)*a(InP); Where a(x, y) represents In x Ga 1-x As y P 1-y The lattice constant of In and let In x Ga 1-x As y P 1-y The lattice constant of GaAs is equal to that of the InP substrate. a(GaAs) represents the lattice constant of GaAs, a(GaP) represents the lattice constant of GaP, a(InAs) represents the lattice constant of InAs, and a(InP) represents the lattice constant of InP.

10. An InGaAsP epitaxial wafer, characterized in that, It was prepared using the growth method of InGaAsP epitaxial wafer as described in any one of claims 1 to 9.

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