Ion implantation for reduced roughness of silicon nitride
By performing an ion implantation process on the silicon nitride layer and adjusting the ion dose and temperature, the problems of surface roughness and grain size of the silicon nitride film were solved, the film density and uniformity were improved, and the device performance was enhanced.
CN121127953APending Publication Date: 2025-12-12APPLIED MATERIALS INC
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Patent Information
- Application Number
- CN202480029149.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-03-31
- Filing Date
- 2024-03-21
- Publication Date
- 2025-12-12
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Figure CN121127953A_ABST
Abstract
An exemplary method of semiconductor processing may include forming a silicon nitride layer on a semiconductor substrate. The silicon nitride layer may be characterized by a first roughness. The method may include performing a post-deposition treatment on the silicon nitride layer. The method may include reducing a roughness of the silicon nitride layer such that the silicon nitride layer may be characterized by a second roughness that is less than the first roughness.
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