改善抛光垫平坦度的方法、双面抛光设备

By setting a rolling structure and performing rolling leveling treatment before the polishing pad is pressed and bonded, combined with a uniform cleaning method, the grid mark problem caused by the polishing pad grooves is solved, improving the polishing quality and the flatness of the silicon wafer.

CN121132500BActive Publication Date: 2026-07-17XIAN ESWIN MATERIAL TECHNOLOGY CO LTD +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XIAN ESWIN MATERIAL TECHNOLOGY CO LTD
Filing Date
2025-11-04
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

During chemical mechanical polishing, the grooves on the upper polishing pad cause grid marks on the lower polishing pad, resulting in poor flatness of the silicon wafer edges and affecting the polishing quality.

Method used

When the upper and lower polishing pads are pressed together, a rolling structure is set up to roll and level them, including opposite movement and relative rotation. The polishing pads are leveled using rollers, and cleaning is performed through multiple identical nozzles to unify the impact force of the cleaning fluid.

Benefits of technology

It effectively eliminates the grid marks on the lower polishing pad, improves the flatness of the polishing pad, improves the surface flatness of the silicon wafer, and enhances the uniformity and consistency of the polishing process.

✦ Generated by Eureka AI based on patent content.

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Abstract

本发明涉及一种改善抛光垫平坦度的方法、双面抛光设备,改善抛光垫平坦度的方法应用于双面抛光设备,所述双面抛光设备包括相对设置的上定盘和下定盘,所述上定盘朝向所述下定盘的一侧设置有上抛光垫,所述下定盘朝向所述上定盘的一侧设置有下抛光垫,所述上抛光垫上设置有沟槽,所述改善抛光垫平坦度的方法包括以下步骤:步骤S1:在所述上抛光垫和所述下抛光垫的对压贴合时,通过设置于所述上抛光垫和所述下抛光垫之间的滚压结构对所述上抛光垫和所述下抛光垫进行滚压整平处理。在上抛光垫和下抛光垫的对压贴合工艺中,增加滚压工序,解决上抛光垫上的沟槽导致的下抛光垫上产生格子印的问题,使得下抛光垫的表面保持平整。
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