一种压阻式差压传感器校准系统及校准方法

By conducting static pressure tests and analyzing usage scenario data in a sealed constant temperature and humidity chamber, the blindness in determining the cause of static offset of piezoresistive differential pressure sensors was resolved, enabling accurate calibration, saving resources, and improving the service life and application reliability of the sensors.

CN121230947BActive Publication Date: 2026-07-17BEIJING SHENGSIRITE SENSING TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202511637036.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-11-10
Publication Date
2026-07-17
Estimated Expiration
2045-11-10

AI Technical Summary

Technical Problem

Existing technologies rely on experience to determine the cause of static offset in piezoresistive differential pressure sensors, without systematically investigating the usage scenario and error mechanism, leading to blind calibration.

Method used

A calibration method for a piezoresistive differential pressure sensor is provided. Static pressure tests are performed in a sealed constant temperature and humidity chamber to obtain static test results. The stress fatigue state is determined by combining the data of the usage scenario, and a targeted calibration strategy is formulated according to the cause of the offset, including calibration of specific offset causes such as temperature drift, base film stress and frequency resonance.

Benefits of technology

It improves the accuracy and cost-effectiveness of calibration, avoids invalid calibration operations, saves time and resources, ensures that the calibrated sensor is suitable for actual use scenarios, and improves the overall application reliability.

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Abstract

本发明涉及传感器校准技术领域，尤其涉及一种压阻式差压传感器校准系统及校准方法，校准方法包括：先将成品传感器进行预处理以消除初始应力，再将其置于恒温恒湿腔中；通过静态压力单元施加五压力点，确定零点输出、线性度和重复性，以确定对应传感器为正常或偏移表征状态；结合使用场景数据计算偏移程度，判定隐性应力疲劳或显性应力疲劳；在显性疲劳时更换传感器，隐性疲劳时则按温漂、基膜应力等偏移原因制定校准方法。本发明通过细分偏移原因与处理方式，避免盲目校准导致的资源浪费与精度不足，有效提升整体校准流程的有效性与精准性。
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Citation Information

Patent Citations

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