A thin film deposition reaction system capable of precisely controlling a precursor

Abstract

The application discloses a thin film deposition reaction system capable of accurately controlling a precursor, comprising a precursor conveying pipeline and a thin film deposition reaction device, wherein the thin film deposition reaction device is provided with two gas inlets and an exhaust outlet; the gas inlets are communicated with one-way precursor conveying pipelines respectively; the precursor conveying pipeline comprises a source supply pipeline and a purging pipeline; the purging pipeline comprises a purging control valve and a purging pipeline flow meter; the source supply pipeline comprises a source bottle, a source bottle output valve, a gas tank and a gas tank control valve; and the gas tank is provided with a gas pressure gauge; the thin film deposition reaction device is minimized by adopting a coaxial circular structure; the gas tank is adopted to accurately measure the single-usage amount of the precursor and a corresponding precursor usage control method is adopted, so that the accurate control of the usage amount of the precursor is realized.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment and technology, and in particular to a thin film deposition reaction system that can precisely control the precursor. Background Technology

[0002] Atomic layer deposition (ALD) is a thin film deposition technique that achieves atomic-level precision control based on self-limiting surface chemical reactions. Its basic principle involves delivering multiple precursors to the thin film deposition reactor via alternating pulses, causing them to react chemically on the substrate. The entire deposition reaction follows a four-step cyclic process: "precursor A adsorption – inert gas purging – precursor B reaction – inert gas purging." ALD offers advantages such as high precision, uniformity, and low-temperature operation, but it also suffers from slow deposition rates, high process complexity, the need for precise control of parameters such as temperature, pressure, and precursor pulse duration, and a narrow process window.

[0003] In existing technologies, a source bottle containing a liquid precursor is heated at a constant temperature to vaporize it. Simultaneously, a negative pressure pump is connected to the exhaust port of the thin film deposition reactor. The precursor gas moves from the source bottle into the thin film deposition reactor due to the pressure difference between its own pressure and the negative pressure inside the reactor, thus completing the precursor adsorption / reaction operation. The adsorption of the two precursors and the inert gas purging alternate. The entire reaction process is mainly controlled by the source bottle temperature and the precursor pulse time. The structure is simple, but it relies mainly on its self-limiting property and uses excessive source gas and a large amount of purging gas to ensure film quality. Therefore, there is a problem of wasting precursor usage.

[0004] In addition, since the rate at which the precursor enters the thin film deposition reactor mainly depends on the pressure difference between the precursor gas pressure and the negative pressure inside the thin film deposition reactor, if the precursor is a certain metal and the gas pressure after the metal is vaporized is low, the time it takes for the precursor to enter the thin film deposition reactor will be long or even impossible to enter the thin film deposition reactor. This results in the entire thin film deposition reaction time being too long to be practically applied. Therefore, atomic layer deposition has a high degree of restriction on the precursor. Summary of the Invention

[0005] To address the problems in related technologies, this application discloses a thin film deposition reaction system that can precisely control the precursor. It minimizes the thin film deposition reaction device by adopting a coaxial circular structure, accurately measures the amount of precursor used in a single operation using a gas cylinder, and provides a corresponding method for controlling the amount of precursor used, thereby achieving accurate control of the amount of precursor used.

[0006] To achieve the above objectives, this application provides the following technical solution: a thin film deposition reaction system capable of precisely controlling the precursor, comprising a precursor delivery pipeline and a thin film deposition reaction device. The thin film deposition reaction device is provided with two air inlets and one exhaust port. The air inlets are respectively connected to one precursor delivery pipeline. The precursor delivery pipeline includes a source supply pipeline and a purge pipeline. The purge pipeline includes a purge control valve and a purge pipeline flow meter. The source supply pipeline includes a source bottle, a source bottle output valve, a gas tank, and a gas tank control valve. The gas tank is equipped with a pressure gauge.

[0007] By adopting the above technical solution, after the precursor in the source bottle is vaporized by constant temperature heating, the precursor gas first enters the gas tank through the source supply pipeline and is stored until the expected amount of gas required for a single thin film deposition reaction is reached. The total amount of precursor gas entering the gas tank can be controlled by controlling the opening time of the source bottle output valve. This total amount of precursor gas is determined by the gas pressure and volume of the gas tank according to the corresponding calculation formula. When the precursor adsorption stage is reached, the gas tank control valve is opened to allow the precursor gas in the gas tank to enter the thin film deposition reaction device, thereby achieving control over the amount of gas entering the thin film deposition reaction device for a single reaction. Precise control of the precursor gas volume in the deposition reactor; when entering the purging stage, inert gas enters the thin film deposition reactor through the purging pipeline, the opening time of the purging control valve is controlled, and the amount of inert gas used for purging can be determined based on the flow count value of the purging pipeline; two precursor delivery pipelines are connected to the two gas inlets of the thin film deposition reactor respectively, and alternately complete the cycle operation of "precursor input - inert gas purging", thereby realizing the four-step cycle process of "precursor A adsorption - inert gas purging - precursor B reaction - inert gas purging" followed by the atomic layer deposition reaction.

[0008] As a further embodiment of this application, the precursor delivery pipeline also includes a source inlet pipeline, which includes an inlet valve and an inlet pipeline flow meter. The inlet valve is connected to the inlet end of the source bottle. With this structure, the high-pressure inert gas input into the source bottle mixes with the precursor gas in the source bottle, and the gas pressure increases. This facilitates the rapid entry of the precursor mixture in the source bottle into the gas tank, thereby shortening the precursor gas storage time in the gas tank and accelerating the thin film deposition reaction rate.

[0009] As a further aspect of this application, the precursor delivery pipeline also includes a source purging pipeline, which includes a source purging control valve and is connected to the gas tank inlet. With this structure, inert gas purging can be performed on the gas tank, thin film deposition reactor, and other related devices and pipelines during the inert gas purging stage, improving purging cleanliness.

[0010] As a further embodiment of this application, the input end of the source purge pipeline is connected to the output end of the inlet pipeline flow meter. This structure enables the source inlet pipeline and the source purge pipeline to share the inlet pipeline flow meter, which can not only accurately control the amount of precursor and inert gas, but also reduce installation and manufacturing costs.

[0011] As a further aspect of this application, the thin film deposition reaction apparatus includes a housing and a top cover, as well as a heating device near the bottom of the housing; a gas equalization plate is provided inside the housing, which divides the interior of the housing into a closed gas equalization chamber and a reaction chamber. The gas equalization chamber and the reaction chamber are coaxial cylindrical, and gas equalization holes are dispersed on the gas equalization plate. The gas equalization chamber is connected to the reaction chamber below through the gas equalization holes; an exhaust port is connected to the reaction chamber, and two air inlets are connected to the gas equalization chamber through short air inlet pipes. The exhaust port and the two air inlets are located at the bottom of the housing and are axially symmetrically distributed; the air inlet end and the exhaust end are axially symmetrically located at the farthest end, which is conducive to the uniform distribution of gas flow in the gas equalization chamber and the reaction chamber; the gas equalization chamber, the gas equalization plate, the wafer, the reaction chamber, etc. are self-contained. The structure is coaxial from top to bottom. Gas enters the gas equalization chamber through the air inlet at the bottom of the shell and is quickly equalized. Then, it passes through the gas equalization plate from top to bottom and enters the reaction chamber at a stable and uniform speed to participate in the atomic layer deposition reaction. The gas equalization plate is directly opposite the wafer surface below. This structure is conducive to the gas entering the reaction chamber vertically downward through the gas equalization plate in a balanced and stable manner. It also ensures that the vertical distance of the gas flow from the gas equalization plate to the wafer surface is the shortest path, which fully guarantees the participation of the precursor gas in the atomic layer deposition reaction. This not only saves the amount of precursor and improves the film quality, but also enables the structure to be miniaturized. In addition, the circular chamber structure is conducive to gas flow and avoids the formation of gas purging dead zones, which helps to save the amount of inert gas purging and improve the purging cleanliness.

[0012] As a further aspect of this application, the gas equalization chamber also includes a gas equalization cover and an annular gas equalization ring. The gas equalization cover, the gas equalization ring, and the gas equalization plate form a closed gas equalization ring channel. The gas equalization ring is also provided with axially symmetrically distributed gas equalization grooves. The gas equalization ring channel is connected to the gas equalization chamber through the gas equalization grooves, and the air inlet is connected to the gas equalization ring channel. The annular gas equalization ring channel facilitates the rapid adjustment of the gas flow direction before it smoothly enters the gas equalization chamber located in the center from the gas equalization grooves, which is conducive to the efficient and rapid smooth and even vertical vertical flow of gas in the gas equalization chamber into the reaction chamber.

[0013] As a further aspect of this application, the reaction chamber also includes a bottom plate and an annular exhaust ring. The exhaust ring, bottom plate, and shell constitute a closed exhaust channel. The bottom of the exhaust ring is also provided with axially symmetrically distributed exhaust holes. The exhaust channel communicates with the reaction chamber through the exhaust holes, and the exhaust port is located inside the exhaust channel. The exhaust channel is relatively isolated from the reaction chamber, which is beneficial for the precursor to stay in the reaction chamber for a sufficient time to ensure the time for the precursor to participate in the atomic layer reaction. Moreover, the annular exhaust channel is conducive to the even and stable flow of gas in the reaction chamber from the axis to the surrounding area, ensuring that there is enough precursor to adhere to the wafer surface, improving the film quality. The closed annular exhaust channel is conducive to the rapid collection of gas and its discharge from the exhaust port, leaving no dead corners for gas residue, which is beneficial to improving the cleanliness of inert gas purging.

[0014] As a further aspect of this application, a coaxial annular boss is provided at the center of the base plate, and the gas equalization holes on the gas equalization plate are evenly distributed in the inner area directly opposite the annular boss. This structure ensures that when the wafer is placed on the annular boss, the gas equalization plate remains parallel to the wafer surface, and the gas equalization holes are evenly distributed in the area directly above the wafer. This ensures that the path of gas falling vertically from the gas equalization holes to the wafer surface is the shortest and can fully cover the wafer, which is beneficial to improving the film quality. It also facilitates the flow of gas from the relatively higher wafer surface to the relatively lower base plate around it, and the exhaust from the vent at the bottom of the casing.

[0015] As a further aspect of this application, this application also provides a method for controlling the amount of precursor used, applied to a thin film deposition reaction system for precisely controlling the precursor provided in this application, comprising the following steps: S1. Set the number of thin film deposition reactions: Determine the number of cycles N for the thin film deposition reaction, where N is a natural number greater than zero; S2. Gas Storage in Gas Tank: Determine the target precursor amount required for a single reaction, set the constant temperature heating temperature of the source bottle, and vaporize the liquid precursor in the source bottle. When the pipeline between the source bottle and the gas tank is in a conductive state, the purge control valve and the gas tank control valve are closed, the source bottle output valve is opened, and the vaporized precursor gas enters the gas tank. The gas pressure in the gas tank increases as the precursor gas enters. The amount of precursor gas entering the gas tank can be controlled by controlling the gas pressure value in the gas tank. When the amount of precursor gas in the gas tank reaches the target precursor amount required for a single reaction, the source bottle output valve is closed, and the pipeline between the source bottle and the gas tank is shut off. S3. Gas tank exhaust: The pipeline between the gas tank and the thin film deposition reactor is in a conductive state. At this time, the gas tank control valve is opened, and the source bottle output valve and the purge control valve are closed. The precursor gas stored in the gas tank enters the thin film deposition reactor through the source supply pipeline and the precursor delivery pipeline. After the precursor adsorption / reaction on the wafer surface, the remaining gas is discharged from the exhaust port. The gas pressure in the gas tank decreases as the precursor gas is discharged until it is balanced with the gas pressure in the thin film deposition reactor. The precursor gas in the gas tank is completely discharged, and the precursor adsorption / reaction is completed. S4. Purge of the thin film deposition reactor: The purging pipeline is in the conducting state. At this time, the purging control valve is open and the gas tank control valve is closed. Inert gas enters the thin film deposition reactor through the purging pipeline for purging and is discharged through the exhaust port. The amount of inert gas purging can be controlled by controlling the purging time of the purging pipeline. S5. Loop Counting and Judgment: Determine if N-1 is 0; if not, decrement the loop count by one and execute step S2; if yes, end. The formula for calculating the amount of precursor gas is as follows: , : Amount of precursor gas used; M1: Molar mass of the precursor; V1: The volume of the gas tank; P1: Gas pressure of the precursor gas inside the gas tank; P0: The gas pressure value when the gas tank is empty, that is, the gas pressure value of the gas tank after the precursor gas is completely discharged from the gas tank. This gas pressure value is also the gas pressure value in the precursor delivery pipeline after step S3 is completed. R: Molar gas constant; T w : The temperature value of the source bottle during constant temperature heating; The amount of inert gas purging used in the thin film deposition reactor is: Q t T b , The amount of inert gas purging during the purging of the thin film deposition reactor; T b Purging duration, i.e., the duration for which the purging control valve is open; Q t The average flow rate of inert gas in the purging pipeline is the measured value of the purging pipeline flow meter.

[0016] By employing this method and combining it with the thin film deposition reaction system provided in this application, the amount of precursor entering the thin film deposition reaction device each time can be precisely controlled by controlling the gas pressure value of the precursor gas in the gas tank; and the amount of inert gas used during each purging of the thin film deposition reaction device can be precisely controlled by controlling the purging time of the purging pipeline; thus, while ensuring the film quality, the amount of precursor and inert gas used is efficiently saved, avoiding waste.

[0017] As a further aspect of this application, the following steps are also included: S6. Is pressurization required? Determine whether the precursor gas in the source bottle needs to be pressurized. If yes, proceed to steps S7 and S2; otherwise, proceed to step S2. S7. Source Bottle Air Intake: At this time, the air intake valve is opened, and inert gas is introduced into the source bottle through the source air intake pipeline. The amount of inert gas entering the source bottle at one time can be controlled by controlling the opening time of the air intake valve. Subsequently, in step S2, the inert gas entering the source bottle is mixed with the precursor gas and then enters the gas tank together. Step S4 also includes the following steps: S8. Gas tank purging: Inert gas is purged through the source inlet pipeline, the source purging pipeline and the source supply pipeline, and then discharged through the thin film deposition reaction device. The amount of inert gas purging during gas tank purging can be controlled by controlling the purging time of the source inlet pipeline. During pressurization, the amount of inert gas entering the source cylinder in a single operation is: , The amount of inert gas entering the source bottle during pressurization; The pressure of inert gases; : The average flow rate of inert gas as it enters the source cylinder through the source inlet pipe; Inert gas intake time; : Temperature of the inert gas; Among them: during gas tank purging, the amount of inert gas purging is: Q J T3, : The amount of inert gas purged during gas tank purging; Q J The average flow rate of inert gas during tank purging; T3: Gas tank purging time, i.e. the duration of the source purging pipeline being connected; After pressurization, the amount of precursor gas stored in the gas tank is [amount missing]. , The amount of precursor gas stored in the pressurized tank; When the precursor in the source bottle vaporizes, the low gas pressure leads to a long gas storage time in the gas tank and low thin film deposition efficiency, this method is used. By introducing a relatively high-pressure inert gas into the source bottle, the gas pressure increases after mixing with the relatively low-pressure precursor gas in the source bottle, thereby accelerating the speed at which the precursor gas enters the gas tank and shortening the gas storage time. Furthermore, the higher gas pressure of the precursor mixture helps to accelerate the movement speed of the precursor towards the thin film deposition reactor, effectively improving the thin film deposition efficiency, and allowing for precise control of the amount of precursor entering the thin film deposition reactor each time. By controlling the pressurization time, the amount of inert gas entering the source bottle can be precisely controlled, thereby precisely controlling the amount of precursor gas used in the gas tank after pressurization. This method can not only precisely control the amount of precursor gas used, but also accelerate the gas storage in the gas tank and the flow rate of the precursor gas, thereby improving the efficiency of thin film deposition reaction.

[0018] By thoroughly purging the gas tank, thin film deposition reactor, and precursor control pipeline, the influence of residual gas in the gas tank can be effectively avoided, improving the accuracy of precursor dosage control. It also facilitates precise control of the total inert gas purging volume.

[0019] In summary, the beneficial effects of this application are as follows: 1. The thin film deposition reactor adopts a coaxial, circular, and symmetrical design to minimize the structure. The circular and annular structure also helps to purge inert gas without leaving any residual dead corners. The top-down airflow and the full coverage and ultra-short gas straight flow distance ensure that gas molecules can reach the wafer surface quickly and stably and fully cover it, so as to fully participate in the atomic layer deposition reaction. This not only effectively guarantees the film quality, but also saves the amount of precursor and inert gas purging.

[0020] 2. The air inlet and outlet are symmetrically distributed at the farthest end, which is conducive to the complete coverage of all spaces in the thin film deposition reactor when the gas flows.

[0021] 3. By setting up an annular gas equalization channel around the gas equalization chamber, the turbulence when the gas flow enters the thin film deposition reactor is effectively solved, ensuring that the gas flow is quickly equalized in the gas equalization channel and then smoothly enters the gas equalization chamber from above the gas equalization ring.

[0022] 4. The use of an annular exhaust channel around the reaction chamber not only effectively ensures the time for the precursor to participate in the atomic layer reaction, but also facilitates the rapid collection and discharge of the remaining gas escaping from the reaction chamber.

[0023] 5. By employing gas tanks, pressure gauges, and corresponding precursor dosage control methods, the amount of precursors participating in the thin film deposition reaction can be accurately controlled by adjusting the gas pressure in the gas tank, thereby improving film quality.

[0024] 6. Inert gas mixing and pressurization are used to increase the flow rate of precursor gas, accelerate the film deposition reaction rate, and accurately control the amount of precursor gas participating in the film deposition reaction by controlling the gas pressure of the gas tank, effectively ensuring the film quality. Attached Figure Description

[0025] The accompanying drawings are provided to further understand this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof.

[0026] In the attached diagram: Figure 1 This is a schematic diagram of a commonly used thin film deposition reaction system in the prior art; Figure 2 This is a schematic diagram of a system according to this application; Figure 3 This is a schematic diagram of another embodiment of this application; Figure 4 This is a schematic diagram of the thin film deposition reaction apparatus and heating apparatus of this application; Figure 5 This is a bottom view of the thin film deposition reaction apparatus and heating apparatus of this application; Figure 6 This is an exploded view of the thin film deposition reactor of this application; Figure 7 This is a cross-sectional view of the thin film deposition reactor of this application; Figure 8 This is a partial cross-sectional schematic diagram of the gas uniform cavity in this application; Figure 9 This is a partial cross-sectional schematic diagram of the reaction chamber of this application; Figure 10 This is a schematic diagram of the heating device of this application; Figure 11 This is a partial cross-sectional schematic diagram of the heating device of this application; Figure 12 This is a schematic diagram of a precursor dosage control method according to this application; Figure 13 This is a schematic flowchart of another embodiment of a precursor dosage control method according to this application; Figure 14 This is a schematic diagram of the gas flow path within the thin film deposition reactor of this application.

[0027] Figure label annotations: 1. Precursor delivery pipeline; 2. Thin film deposition reactor; 201. Top cover; 202. Shell; 203. Air inlet; 204. Exhaust port; 3. Purge pipeline; 301. Purge control valve; 302. Purge pipeline flow meter; 4. Power supply pipeline; 401. Power cylinder; 402. Power cylinder output valve; 403. Gas tank; 404. Barometer; 405. Gas tank control valve; 5. Intake pipe; 501. Intake valve; 502. Intake pipe flow meter; 6. Source purging pipeline; 601. Source purging control valve; 7. Short intake pipe; 8. Gas equalization chamber; 801. Gas equalization cover; 802. Gas equalization plate; 803. Gas equalization ring; 804. Gas equalization hole; 805. Gas equalization groove; 806. Gas equalization ring channel; 9. Reaction chamber; 901. Exhaust ring; 902. Exhaust hole; 903. Base plate; 904. Boss; 905. Exhaust ring channel; 10. Heating device; 1001. Constant temperature heating platform; 1002. Electric heating tube; 1003. Temperature sensor contact; 1004. Wiring protection box; 1005. Electrical contact. Detailed Implementation

[0028] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects disclosed in this embodiment as detailed in the appended claims.

[0029] It should be noted that all directional indicators in the embodiments (such as up, down, left, right, front, back, etc.) are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0030] Furthermore, the use of terms such as "first" and "second" in the embodiments is for descriptive purposes only and does not specifically refer to any order or sequence, nor is it intended to limit this application. It is merely to distinguish components or operations described using the same technical terms and should not be construed as indicating or implying their relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of the various embodiments can be combined with each other, but only if they are feasible for those skilled in the art. If a combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0031] To further understand the content, features, and effects of this application, the following embodiments are provided, and detailed descriptions are given below in conjunction with the accompanying drawings: Example 1 like Figure 2 As shown, a thin film deposition reaction system capable of precisely controlling precursors includes a precursor delivery pipeline 1 and a thin film deposition reaction device 2. The thin film deposition reaction device 2 is provided with two air inlets 203 and one exhaust port 204. The air inlets 203 are respectively connected to one of the precursor delivery pipelines 1. The precursor delivery pipeline 1 includes a source supply pipeline 4 and a purge pipeline 3. The purge pipeline 3 includes a purge control valve 301 and a purge pipeline flow meter 302. The source supply pipeline 4 includes a source bottle 401, a source bottle output valve 402, a gas tank 403, and a gas tank control valve 405. The gas tank 403 is provided with a pressure gauge 404.

[0032] like Figure 4 , Figure 5 , Figure 6 , Figure 7 As shown, the thin film deposition reactor 2 includes a housing 202 and a top cover 201. A gas equalization plate 802 is provided inside the housing 202, dividing the interior of the housing 202 into a closed gas equalization chamber 8 and a reaction chamber 9. Gas equalization holes 804 are distributed on the gas equalization plate 802, and the gas equalization chamber 8 is connected to the reaction chamber 9 below through the gas equalization holes 804. The bottom of the housing 202 also has an exhaust port 204 and two air inlets 203. The exhaust port 204 is connected to the reaction chamber 9, and the two air inlets 203 are connected to the gas equalization chamber 8 through a short air inlet pipe 7. The gas equalization chamber 8 and the reaction chamber 9 are coaxially cylindrical, and the exhaust port 204 and the two air inlets 203 are axially symmetrically distributed. The reactor also includes a heating device 10, which is located close to the bottom of the housing 202.

[0033] like Figure 8 As shown, the gas equalization chamber 8 also includes a gas equalization cover 801 and an annular gas equalization ring 803. The gas equalization cover 801, the gas equalization ring 803 and the gas equalization plate 802 form a closed gas equalization ring channel 806. The gas equalization ring 803 is also provided with axially symmetrically distributed gas equalization grooves 805. The gas equalization ring channel 806 is connected to the gas equalization chamber 8 through the gas equalization grooves 805. The air inlet 203 is connected to the gas equalization ring channel 806.

[0034] like Figure 9As shown, the reaction chamber 9 also includes a bottom plate 903 and an annular exhaust ring 901. The exhaust ring 901, the bottom plate 903 and the shell 202 form a closed exhaust annular channel 905. The bottom of the exhaust ring 901 is also provided with axially symmetrically distributed exhaust holes 902. The exhaust annular channel 905 is connected to the reaction chamber 9 through the exhaust holes 902. The exhaust port 204 is located inside the exhaust annular channel 905. The bottom plate 903 is also provided with a coaxial annular boss 904 at the center. The gas equalization holes 804 on the gas equalization plate 802 are evenly distributed in the internal area facing the annular boss 904.

[0035] like Figure 10 , Figure 11 As shown, the heating device 10 includes a constant temperature heating platform 1001 and a wiring protection box 1004. The constant temperature heating platform 1001 has an electric heating tube 1002 built in it. The wiring protection box 1004 is provided with a temperature sensor contact 1003 and an electric contact 1005 of the electric heating tube. The constant temperature heating platform 1001 is attached to the bottom of the housing 202 to heat the reaction chamber 9 at a constant temperature.

[0036] like Figure 14 As shown, gas enters through the inlet 203 at the bottom of the thin film deposition reactor 2, and enters the gas equalization ring channel 806 upward through the short inlet pipe 7. After rapid gas equalization, it enters the gas equalization chamber 8 through the gas equalization grooves 805 symmetrically distributed around the gas equalization chamber 8. After stable gas equalization, the gas flow enters the reaction chamber 9 vertically downward through the gas equalization hole 804. After reaching the wafer surface vertically downward, it flows to the surrounding area and enters the exhaust ring channel 905 through the exhaust hole 902 around the reaction chamber 9. The exhaust port 204 is connected to a negative pressure pump to extract the residual gas in the exhaust ring channel 905 from the thin film deposition reactor 2.

[0037] like Figure 12 As shown, the thin film deposition reaction system based on this embodiment, which can precisely control the precursor, also includes a method for controlling the amount of precursor used, comprising the following steps: S1. Set the number of thin film deposition reactions: Determine the number of cycles N for the thin film deposition reaction, where N is a natural number greater than zero; S2. Gas Storage in Gas Tank: Determine the target precursor amount required for a single reaction, set the constant temperature heating temperature of source bottle 401, and vaporize the liquid precursor in source bottle 401. When the pipeline between source bottle 401 and gas tank 403 is in a conductive state, purge control valve 301 and gas tank control valve 405 are closed, source bottle output valve 402 is opened, and the vaporized precursor gas enters gas tank 403. The gas pressure in gas tank 403 increases as the precursor gas enters. By controlling the gas pressure in gas tank 403, the amount of precursor gas entering gas tank 403 can be controlled. When the amount of precursor gas in gas tank 403 reaches the target precursor amount required for a single reaction, close source bottle output valve 402 and shut off the pipeline between source bottle 401 and gas tank 403. S3. Gas tank exhaust: The pipeline between gas tank 403 and thin film deposition reactor 2 is in a conductive state. At this time, gas tank control valve 405 is opened, source bottle output valve 402 and purge control valve 301 are closed. The precursor gas stored in gas tank 403 enters thin film deposition reactor 2 through source supply pipeline 4 and precursor delivery pipeline 1. After precursor adsorption / reaction on the wafer surface, the remaining gas is discharged from exhaust port 204. The gas pressure of gas tank 403 decreases as the precursor gas is discharged until it is balanced with the gas pressure in thin film deposition reactor. The precursor gas in gas tank is completely discharged, and the precursor adsorption / reaction is completed. S4. Purge of the thin film deposition reactor: The purging pipeline 3 is in the conducting state. At this time, the purging control valve 301 is open and the gas tank control valve 405 is closed. The inert gas enters the thin film deposition reactor 2 through the purging pipeline 3 for purging and is discharged through the exhaust port 204. The amount of inert gas purging can be controlled by controlling the purging time of the purging pipeline 3. S5. Loop counting and judgment: Determine whether N-1 is 0; if not, decrement the loop count by one and execute step S2; if yes, end.

[0038] Using this method, the precursor gas dosage is calculated based on the formula. Formula for calculating inert gas purging amount Q t T b， It can precisely control the amount of precursor gas used and the amount of inert gas purging.

[0039] Example 2 like Figure 3 As shown, a thin film deposition reaction system capable of precisely controlling precursors includes a precursor delivery pipeline 1 and a thin film deposition reaction device 2. The thin film deposition reaction device 2 is provided with two air inlets 203 and one exhaust port 204. The air inlets 203 are respectively connected to one of the precursor delivery pipelines 1. The precursor delivery pipeline 1 includes a source supply pipeline 4 and a purge pipeline 3. The purge pipeline 3 includes a purge control valve 301 and a purge pipeline flow meter 302. The source supply pipeline 4 includes a source bottle 401, a source bottle output valve 402, a gas tank 403, and a gas tank control valve 405. The gas tank 403 is provided with a pressure gauge 404. The precursor delivery pipeline 1 also includes a source air intake pipeline 5 and a source purge pipeline 6. The source air intake pipeline 5 includes an air intake valve 501 and an air intake pipeline flow meter 502. The air intake valve 501 is connected to the air intake end of the source cylinder 401. The source purge pipeline 6 includes a source purge control valve 601. The source purge control valve 601 is connected between the output end of the air intake pipeline flow meter 502 and the air intake end of the gas tank 403.

[0040] like Figure 4-11 ,as well as Figure 14As shown, it also includes a thin film deposition reaction apparatus 2 and a heating device 10 as described in Example 1.

[0041] like Figure 13 As shown, the thin film deposition reaction system based on this embodiment, which can precisely control the precursor, also includes a method for controlling the amount of precursor used, comprising the following steps: S1. Set the number of thin film deposition reactions: Determine the number of cycles N for the thin film deposition reaction, where N is a natural number greater than zero; S6. Is pressurization required? Determine whether the precursor gas in the source bottle needs to be pressurized. If yes, proceed to steps S7 and S2; otherwise, proceed to step S2. S7. Source bottle air intake: At this time, the air intake valve 501 is opened, and inert gas is introduced into the source bottle 401 through the source air intake pipe 5. The amount of inert gas entering the source bottle 401 at one time can be controlled by controlling the opening time of the air intake valve 501. S2. Gas Storage in Gas Tank: Determine the target precursor amount required for a single reaction, set the constant temperature heating temperature of source bottle 401, and vaporize the liquid precursor in source bottle 401. When the pipeline between source bottle 401 and gas tank 403 is in a conductive state, purge control valve 301 and gas tank control valve 405 are closed, source bottle output valve 402 is opened, and the vaporized precursor gas enters gas tank 403. The gas pressure in gas tank 403 increases as the precursor gas enters. By controlling the gas pressure in gas tank 403, the amount of precursor gas entering gas tank 403 can be controlled. When the amount of precursor gas in gas tank 403 reaches the target precursor amount required for a single reaction, close source bottle output valve 402 and shut off the pipeline between source bottle 401 and gas tank 403. S3. Gas tank exhaust: The pipeline between the gas tank and the thin film deposition reactor is in a conductive state. At this time, the gas tank control valve is opened, and the source bottle output valve and the purge control valve are closed. The precursor gas stored in the gas tank enters the thin film deposition reactor through the source supply pipeline and the precursor delivery pipeline. After the precursor adsorption / reaction on the wafer surface, the remaining gas is discharged from the exhaust port. The gas pressure in the gas tank decreases as the precursor gas is discharged until it is balanced with the gas pressure in the thin film deposition reactor. The precursor gas in the gas tank is completely discharged, and the precursor adsorption / reaction is completed. S4. Purge of the thin film deposition reactor: The purging pipeline 3 is in the conducting state. At this time, the purging control valve 301 is open and the gas tank control valve 405 is closed. The inert gas enters the thin film deposition reactor 2 through the purging pipeline 3 for purging and is discharged through the exhaust port 204. The amount of inert gas purging can be controlled by controlling the purging time of the purging pipeline 3. S8. Gas tank purging: Inert gas is purged through the source inlet pipe 5, the source purging pipe 6 and the source supply pipe 4, and then discharged through the thin film deposition reaction device 2. The amount of inert gas purging during the purging of gas tank 403 can be controlled by controlling the purging time of the source inlet pipe 5. S5. Loop Counting and Judgment: Determine if N-1 is 0; if not, decrement the loop count by one and execute step S2; if yes, end. Using this method, the precursor gas dosage is calculated based on the formula. ,(in: , ), and the formula for calculating the total amount of inert gas purging. = + It can precisely control the amount of precursor gas used and the amount of inert gas purging.

[0042] The implementation principle of a thin film deposition reaction system for precisely controlling precursors according to an embodiment of this application is as follows: The two air inlets 203 of the thin film deposition reactor 2 are connected to two precursor delivery pipelines 1 respectively. One of the precursor delivery pipelines 401 contains liquid precursor A, and the other precursor delivery pipeline 1 contains liquid precursor B. The working state of the precursor delivery pipeline 1 connected to the precursor A follows a three-step cycle process of "gas tank storage - gas tank discharge - inert gas purging". After each cycle, it is necessary to wait for the precursor B to finish working before starting work again. During the waiting period, the gas tank 403 completes the storage of precursor A. The working state of the precursor delivery pipeline 1 connected to the precursor B follows a three-step cycle process of "gas tank storage - gas tank discharge - inert gas purging". After each cycle, it is necessary to wait for the precursor A to finish working before starting work again. During the waiting period, the gas tank 403 completes the storage of precursor B. The thin film deposition reactor 2 achieves a four-step cyclic process of "precursor A adsorption -- inert gas purging -- precursor B reaction -- inert gas purging" by alternately switching the connection state of the two air inlets 203; wherein, When the thin film deposition reactor 2 is in the "precursor A - inert gas purging" working state, the precursor delivery pipeline 1 connected to the precursor A is in the "gas tank discharge - inert gas purging" working state, and the precursor delivery pipeline 1 connected to the precursor B is simultaneously in the "gas tank storage" working state. When the thin film deposition reactor 2 is in the "precursor B reaction - inert gas purging" working state, the precursor delivery pipeline 1 connected to precursor B is in the "gas tank discharge - inert gas purging" working state, and the precursor delivery pipeline 1 connected to precursor A is simultaneously in the "gas tank storage" working state.

[0043] In practical applications, the amount of precursor gas in gas tank 403 deviates from the control amount calculated in this application. However, since the thin film deposition reaction device 2 provided in this application adopts a minimal design, it has the characteristics of the shortest gas flow path and full coverage of the wafer. Therefore, the error in the amount of precursor gas does not affect the film formation effect, and the impact of the deviation is negligible.

[0044] Finally, it should be noted that the above disclosure is merely a preferred embodiment of this application and is not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application. The scope of this application is limited only by the appended claims.

Claims

1. A thin film deposition reaction system capable of precisely controlling precursors, characterized in that: The device includes a precursor delivery pipeline (1) and a thin film deposition reactor (2). The thin film deposition reactor (2) is provided with two air inlets (203) and one exhaust port (204). The air inlets (203) are connected to one of the precursor delivery pipelines (1). The precursor delivery pipeline (1) includes a source supply pipeline (4) and a purge pipeline (3). The purge pipeline (3) includes a purge control valve (301) and a purge pipeline flow meter (302). The source supply pipeline (4) includes a source bottle (401), a source bottle output valve (402), a gas tank (403), and a gas tank control valve (405). The gas tank (403) is provided with a pressure gauge (404). The precursor delivery pipeline (1) also includes a source air intake pipeline (5), which includes an air intake valve (501) and an air intake pipeline flow meter (502). The air intake valve (501) is connected to the air intake end of the source bottle (401). The precursor delivery pipeline (1) also includes a source purge pipeline (6), which includes a source purge control valve (601) and is connected to the inlet end of the gas tank (403). The input end of the source purge line (6) is connected to the output end of the intake line flow meter (502); The thin film deposition reactor (2) includes a housing (202) and a top cover (201). A gas equalization plate (802) is provided inside the housing (202), dividing the interior of the housing (202) into a closed gas equalization chamber (8) and a reaction chamber (9). Gas equalization holes (804) are distributed on the gas equalization plate (802), and the gas equalization chamber (8) communicates with the reaction chamber (9) below through the gas equalization holes (804). The bottom of the housing (202) is also provided with… It has an exhaust port (204) and two air inlets (203). The exhaust port (204) is connected to the reaction chamber (9). The two air inlets (203) are connected to the gas equalization chamber (8) through a short air inlet pipe (7). The gas equalization chamber (8) and the reaction chamber (9) are coaxial cylinders. The exhaust port (204) and the two air inlets (203) are axially symmetrically distributed. It also includes a heating device (10) which is close to the bottom of the shell (202).

2. The thin film deposition reaction system for precisely controlling the precursor according to claim 1, characterized in that: The gas equalization chamber (8) further includes a gas equalization cover (801) and an annular gas equalization ring (803). The gas equalization cover (801), the gas equalization ring (803) and the gas equalization plate (802) form a closed gas equalization ring channel (806). The gas equalization ring (803) is also provided with axially symmetrically distributed gas equalization grooves (805). The gas equalization ring channel (806) is connected to the gas equalization chamber (8) through the gas equalization grooves (805). The air inlet (203) is connected to the gas equalization ring channel (806).

3. The thin film deposition reaction system for precisely controlling the precursor according to claim 1, characterized in that: The reaction chamber (9) also includes a bottom plate (903) and an annular exhaust ring (901). The exhaust ring (901), the bottom plate (903) and the housing (202) form a closed exhaust ring channel (905). The bottom of the exhaust ring (901) is also provided with axially symmetrically distributed exhaust holes (902). The exhaust ring channel (905) is connected to the reaction chamber (9) through the exhaust holes (902). The exhaust port (204) is located in the exhaust ring channel (905).

4. The thin film deposition reaction system for precisely controlling the precursor according to claim 3, characterized in that: The base plate (903) is also provided with a coaxial annular boss (904) at the center position, and the air distribution holes (804) on the air distribution plate (802) are evenly distributed in the internal area facing the annular boss (904).

5. A method for controlling the amount of precursor used, based on a thin film deposition reaction system capable of precisely controlling the precursor as described in any one of claims 1 to 4, characterized in that, Includes the following steps: S1. Set the number of thin film deposition reactions: Determine the number of cycles N for the thin film deposition reaction, where N is a natural number greater than zero; S2, Gas storage in a gas tank: Determine the target amount of precursor required for a single reaction, set the constant temperature heating temperature of the source bottle (401), the precursor is vaporized and enters the gas tank (403), the gas pressure of the gas tank (403) increases as the precursor gas enters, and the amount of precursor gas stored in the gas tank (403) can be controlled by controlling the gas pressure value in the gas tank (403); S3, Gas tank exhaust: The precursor gas stored in the gas tank (403) enters the thin film deposition reactor (2) through the source supply pipeline (4) and the precursor delivery pipeline (1). The gas pressure of the gas tank (403) decreases as the precursor gas is discharged until it is balanced with the gas pressure in the thin film deposition reactor (2). S4. Purge of the thin film deposition reactor: Inert gas enters the thin film deposition reactor (2) through the purging pipeline (3). The amount of inert gas purging can be controlled by controlling the purging time of the purging pipeline (3). S5. Loop Counting and Judgment: Determine if N-1 is 0; if not, decrement the loop count by one and execute step S2; if yes, end. The formula for calculating the amount of precursor gas is as follows: , : Amount of precursor gas used; M1: Molar mass of the precursor; V1: The volume of the gas tank (403); P1: The pressure value of the precursor gas in the gas tank (403); P0: The air pressure value when the gas tank is empty; R: molar gas constant; T w The temperature value of the source bottle (401) during constant temperature heating; The amount of inert gas purging in the thin film deposition reactor (2) is: Q t T b , The amount of inert gas purging during the purging of the thin film deposition reactor (2); T b : Purging duration, i.e., the opening duration of the purging control valve (301); Q t : The average flow rate of inert gas in the purging pipeline (3).

6. The method for controlling the amount of precursor according to claim 5, characterized in that, It also includes the following steps: S6. Is pressurization required? If yes, proceed to step S7 and step S2; otherwise, proceed to step S2. S7, Source Bottle Air Intake: Inert gas is introduced into the source bottle (401) through the source air intake pipe (5), and the amount of inert gas intake can be controlled by controlling the opening time of the air intake valve (501); Step S4 further includes the following steps: S8. Gas tank purging: After the inert gas is purged through the source inlet pipe (5), the source purging pipe (6) and the source supply pipe (4), the gas tank (403) is discharged through the thin film deposition reaction device (2). The amount of inert gas purging during gas tank purging can be controlled by controlling the purging time of the source inlet pipe (5). During pressurization, the amount of inert gas entering the source bottle (401) in a single operation is: , The amount of inert gas entering the source bottle (401) during pressurization; The pressure of inert gases; The average flow rate of inert gas when it enters the source bottle (401) through the source inlet pipe (5); Inert gas intake time; : Temperature of the inert gas; Wherein: during the purging of the gas tank (403), the amount of inert gas purging is: Q J T3, The amount of inert gas purging during the purging of the gas tank (403); Q J The average flow rate of inert gas during the purging of the gas tank (403); T3: The purging time of the gas tank (403) is the opening time of the source purging control valve (601).

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