一种垂直腔面发射激光器及其制作方法
By employing a through-hole structure and an oxide confinement layer in the VCSEL laser, the problem of poor thermal performance at high temperatures was solved, resulting in improved thermal stability and high-speed modulation performance, and simplifying the manufacturing process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2025-10-23
- Publication Date
- 2026-07-17
AI Technical Summary
Existing VCSEL lasers have poor thermal performance at high temperatures, leading to thermal saturation and relaxation oscillations in optical power, which affects their static and dynamic performance. At the same time, existing methods for reducing electrical parasitic capacitance increase the complexity and cost of the manufacturing process.
The epitaxial material under the P-type pad is replaced with a low dielectric constant dielectric by using a through-hole structure, and an oxide confinement structure is formed around the active region. Combined with a first distributed Bragg mirror made of high thermal conductivity material, the heat dissipation path is optimized.
It effectively reduces the parasitic capacitance and thermal resistance of the device, improves the thermal stability and high-speed modulation performance of the laser under high bias current, and simplifies the manufacturing process.
Smart Images
Figure CN121282729B_ABST