Preparation method of CdTe quantum dot sensitized BiOBr-SnO2 photoelectric gate, sensor and application

Abstract

The application provides a preparation method of a CdTe quantum dot sensitized BiOBr-SnO2 photoelectric grid, a sensor and application, and belongs to the technical field of nanomaterials, organic photoelectric chemical transistor (OPECT) aptamer sensing and agricultural environment monitoring. The method comprises the following steps: (1) preparing nanosheet-shaped BiOBr through a hydrothermal method; (2) preparing SnO2 nanoparticles through a hydrothermal method; (3) mixing SnO2 and BiOBr suspending liquid according to a volume ratio of 3:1 to prepare a SnO2-BiOBr heterojunction; (4) preparing CdTe quantum dots by reacting NaBH4 and Te powder to generate NaHTe precursor, and then refluxing the source at 100 DEG C under the condition of pH 10-11 for 7 hours; and (5) sequentially modifying the SnO2-BiOBr heterojunction and the CdTe quantum dots on the surface of an ITO electrode to obtain a CdTe QDs / BiOBr-SnO2 / ITO ternary composite photoelectric grid. The sensor constructed by the application can be used for detecting TC in actual soil samples, and exhibits good anti-interference performance and reliability; and the design idea proposed in the application can be used for developing a sensing method for detecting other antibiotics, and has a good application prospect.

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