A semiconductor etching apparatus

CN121331737BActive Publication Date: 2026-10-16JIANGSU ALPHA-SEMICON EQUIP CO LTD
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Patent Information

Application Number
CN202511453052.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-10-11
Publication Date
2026-10-16
Estimated Expiration
2045-10-11

AI Technical Summary

Technical Problem

但下电极腔室内空间有限,需要集成安装的组件多样且结构复杂,难以安装、检查及维护

Benefits of technology

本发明所述半导体刻蚀设备通过设置与下电极腔室的外侧壁密封连接的密封腔,扩大半导体刻蚀设备中大气环境所处空间的占用体积,使所述升降机构以及位于下电极腔室中的其它机构能够有更大的安装和维修空间,方便升降机构的维修和安装。

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Abstract

The application discloses a semiconductor etching equipment, which comprises a process chamber, a lower electrode chamber, a lifting mechanism and a wafer edge compression ring. The lifting mechanism comprises a sealed cavity, a guide rod assembly, a support assembly, a driving assembly and a guide assembly. The sealed cavity is connected to the outer wall of the lower electrode chamber, and the internal spaces of the two are communicated. The upper and lower ends of the guide rod assembly are connected with the driving assembly and the support assembly respectively, motion is transmitted, and vacuum and atmospheric environment are isolated. The support assembly supports and levels the wafer edge compression ring. The driving assembly is fixed to the inner wall of the lower electrode chamber and is rigidly connected with the guide rod assembly to transmit motion. The guide assembly is distributed at the upper and lower ends of the sealed cavity and is matched with the guide rod to constrain the lifting and rotary motion of the guide rod. The semiconductor etching equipment can realize stable lifting and centering of the wafer edge compression ring and is convenient for installation and maintenance of the lifting mechanism.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor processing, and more specifically to a semiconductor etching apparatus. Background Technology

[0002] Semiconductor etching equipment typically uses a gas delivery system to deliver reactive gases into the process chamber, where radio frequency (RF) generates plasma gas to etch the wafer. During the wafer etching process, the plasma diffuses and reacts with the wafer surface under the influence of electric and magnetic fields. However, in certain process requirements (such as deep silicon etching), wafer edges may develop defects due to etching. Therefore, wafer edge protectors are needed to cover and protect the wafer edges to reduce edge defects. During wafer transport, the wafer edge protectors must be removed to allow for wafer loading and unloading.

[0003] In existing semiconductor etching equipment, the lifting mechanism used to control the covering or removal of the wafer edge retaining ring is usually located in the lower electrode chamber and passes through the top of the lower electrode chamber to lift or lower the wafer edge retaining ring. However, the space inside the lower electrode chamber is limited, and the components that need to be integrated are diverse and complex in structure, making them difficult to install, inspect, and maintain. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor etching apparatus that facilitates the installation and maintenance of the lifting mechanism and achieves effective connection and vacuum isolation between the atmospheric end and the vacuum end components.

[0005] To achieve the above objectives, the present invention provides a semiconductor etching apparatus, comprising: The process chamber, as well as the lower electrode chamber, lifting mechanism, and wafer edge pressure ring located inside the process chamber; The lower electrode chamber is connected to the lifting mechanism, and the top of the lifting mechanism supports the wafer edge pressure ring; The lifting mechanism includes: A sealed cavity is sealed to the outer wall of the lower electrode chamber, and the sealed cavity communicates with the internal space of the lower electrode chamber; Support assembly, the support assembly being configured to support the wafer edge retaining ring; A guide rod assembly includes a guide rod and a bellows; the lower part of the guide rod is installed inside the sealing cavity, and the upper part of the guide rod extends out of the sealing cavity and is rigidly connected to the support assembly; the bellows is sleeved outside the guide rod, one end of the bellows is installed at the top of the sealing cavity through a first flange, and the other end is sealed to the guide rod. A drive assembly is disposed inside the lower electrode chamber; the drive assembly is rigidly connected to the guide rod assembly to drive the guide rod assembly to move up and down; A guide assembly is disposed in the upper and / or lower part of the sealed cavity and is adapted to the guide rod to constrain the lifting and rotating movements of the guide rod.

[0006] Optionally, the top of the sealing cavity is provided with a first recessed platform, the surface of the first recessed platform is machined with a sealing groove, and a sealing ring is installed in the sealing groove; The first flange located at the top of the bellows is embedded in the first recess at the top of the sealing cavity, and the first flange is sealed and isolated from the first recess by the sealing ring. The lower part of the guide rod is machined with a second flange, which is sealed to the bellows.

[0007] Optionally, the guide assembly includes a first guide module fixed to the upper end of the sealing cavity, the first guide module comprising: A first guide sleeve has a first guide hole extending along its axis through it; the side wall of the first guide sleeve has a plurality of first air holes perpendicular to the wall surface; the inner wall of the first guide sleeve has a plurality of first air grooves opened along the axis, and the first air grooves are connected to the first air holes one by one; the first air grooves are connected to the internal space of the corrugated pipe; the outer side of the first guide sleeve is provided with a second air groove connected to the first air holes, and the second air groove is an annular air groove. The first mounting base is sleeved on the outside of the first guide sleeve and fixed at the top of the sealing cavity; the side wall of the first mounting base is provided with a plurality of second air holes, the second air holes being positioned corresponding to the second air guide groove.

[0008] Optionally, the second air holes are spaced apart along the circumference of the first mounting base; the second air guide groove communicates with the second air holes; Each of the second air holes includes a first end and a second end, wherein the first end of the second air hole is located on the inner wall surface of the first mounting base, and the second end of the second air hole is located on the outer wall surface of the first mounting base; and the position of the first end of the second air hole is higher than that of the second end of the second air hole.

[0009] Optionally, the top surface of the first mounting base is provided with a second guide hole, the second guide hole is coaxial with the first guide hole, and the diameter of the second guide hole is larger than the diameter of the first guide hole; the guide rod passes through the second guide hole and cooperates with the first guide hole to constrain the vertical movement of the guide rod.

[0010] Optionally, the upper end face of the first guide sleeve is constrained by cooperating with the inner top wall of the first mounting base, and the lower end face of the first guide sleeve is constrained by cooperating with the first flange, so as to achieve vertical position constraint of the first guide sleeve. The top surface of the first flange is provided with a second recessed platform, and the first guide sleeve cooperates with the second recessed platform to achieve concentricity; The bottom end of the first mounting base is provided with a third flange, which is fixed to the top end of the sealing cavity.

[0011] Optionally, the guide assembly includes a second guide module fixed to the lower end of the sealing cavity, the second guide module including a second mounting base and a pressure cap, wherein: The second mounting base includes a first mounting portion and a first extension portion; the first mounting portion is fixed to the bottom end of the sealing cavity; the bottom end of the sealing cavity is provided with an opening, and the first extension portion extends into the sealing cavity through the opening; The bottom surface of the second mounting base has a stepped through hole along the axial direction; The pressure cap includes a second mounting portion and a second extension portion; the pressure cap closes the stepped through hole; the second mounting portion cooperates with the first mounting portion to close the bottom opening of the sealing cavity; the second extension portion extends into the stepped through hole; a blind hole extending axially is provided in the middle of the second extension portion to accommodate the movement stroke of the guide rod at the bottom.

[0012] Optionally, the second guide module further includes a second guide sleeve, which is sleeved on the outside of the guide rod; The second guide sleeve is installed inside the stepped through hole and is concentric with the stepped through hole; The upper end face of the second guide sleeve is tightly abutted and constrained against the stepped surface inside the stepped through hole; The lower end face of the second guide sleeve is pressed and fixed by the upper end face of the second extension. Optionally, the second guide module further includes a limiting key; The inner wall of the second mounting base is provided with a keyway along the axial direction above the stepped through hole, and the bottom of the keyway is flush with or higher than the stepped surface. The outer side wall of the lower part of the guide rod is provided with a sliding groove that cooperates with the limiting key, and the sliding groove extends along the axial direction of the guide rod; The limiting key is embedded in the keyway and slides with the sliding groove; the lower end of the limiting key is pressed against and constrained by the second guide sleeve.

[0013] Optionally, the support assembly includes a pin holder and a plurality of pins, wherein: The ejector pin bracket is fixed to the top of the guide rod; The plurality of ejector pins are evenly fixed on the ejector pin bracket.

[0014] Optionally, the semiconductor etching apparatus further includes an electrostatic chuck and a ring assembly, wherein: The electrostatic chuck is located at the top of the lower electrode chamber and is used to place the wafer; The ring assembly is arranged around the electrostatic chuck, and the ring assembly is capable of supporting the wafer edge pressure ring; When the wafer edge retaining ring is supported on the ring assembly and the wafer is placed on the electrostatic chuck, the orthographic projection of the inner peripheral edge of the lower surface of the wafer edge retaining ring onto the plane containing the upper surface of the wafer forms a radially overlapping area with the outer peripheral edge of the upper surface of the wafer.

[0015] Optionally, the ejector pin holder is annular, the outer diameter of the ring assembly is smaller than the inner diameter of the ejector pin holder, and the inner diameter of the wafer edge clamping ring is smaller than the inner diameter of the ring assembly.

[0016] Optionally, a plurality of first lugs are evenly provided on the edge of the ejector pin holder, and the ejector pin is disposed on the first lug; the edge of the wafer edge retaining ring is provided with a second lug corresponding to the first lug, and the lower surface of the second lug is provided with a plurality of positioning grooves corresponding one-to-one with each of the ejector pins; when the wafer edge retaining ring is supported by the ejector pins on the ejector pin holder, each ejector pin is inserted into its corresponding positioning groove.

[0017] Optionally, the wafer edge retaining ring is made of ceramic material, and the surface of the wafer edge retaining ring is coated with a yttrium oxide coating.

[0018] Optionally, the driving component includes: A cylinder, fixed to the inner wall of the lower electrode chamber, includes a cylinder push rod; A connecting rod, one end of which is fixedly connected to the guide rod, and the other end of which is fixedly connected to the cylinder push rod.

[0019] Optionally, the two ends of the connecting rod are respectively provided with locking structures, each locking structure including: a fixing hole, an adjustment gap, a locking hole perpendicular to the fixing hole, and a fixing member that cooperates with the locking hole; The fixing hole accommodates the cylinder push rod or guide rod; The adjustment gap extends from the sidewall of the fixing hole to the surface of the connecting rod, dividing the connecting rod into a first adjustment part and a second adjustment part connected by the wall of the fixing hole; The locking hole penetrates the first adjustment part and extends into the interior of the second adjustment part; The fastener is inserted into the locking hole. By twisting the fastener, the first adjustment part and the second adjustment part are brought closer to each other or moved further apart, so as to reduce or increase the clamping space of the fastening hole.

[0020] Optionally, the support assembly further includes an adjustment seat, which sequentially comprises a first section, a second section, and a third section, wherein: The first section of the adjusting seat has an outer cylindrical surface structure, into which the ejector pin bracket is inserted; The second section of the adjusting seat is the fourth flange, which is fixedly connected to the ejector pin bracket. The third section of the adjusting seat has a stepped hole along its axial direction, and the top end of the guide rod is inserted into the stepped hole.

[0021] Optionally, the ejector pin bracket is provided with a plurality of first mounting holes, and the fourth flange is provided with second mounting holes corresponding one-to-one with each of the first mounting holes; The ejector pin bracket is fixedly connected to the adjusting seat via a plurality of fasteners passing through the first mounting hole and the second mounting hole; The fourth flange has several threaded holes, and a leveling threaded component is screwed into each of the several threaded holes; The leveling threaded component is configured to adjust the levelness of the ejector pin bracket by screwing its end against the lower end face of the ejector pin bracket.

[0022] Optionally, the top end of the guide rod has a first constraint surface on its side wall; the step hole of the adjusting seat has a second constraint surface that matches the first constraint surface. When the guide rod is inserted into the step hole, the first constraint surface contacts the second constraint surface to restrict the rotation of the guide rod.

[0023] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects: The semiconductor etching equipment of the present invention expands the volume occupied by the atmospheric environment in the semiconductor etching equipment by setting a sealed cavity that is sealed to the outer wall of the lower electrode chamber, so that the lifting mechanism and other mechanisms located in the lower electrode chamber can have a larger installation and maintenance space, which facilitates the maintenance and installation of the lifting mechanism.

[0024] In the semiconductor etching apparatus of the present invention, the portion of the lifting mechanism other than the driving component is located outside the lower electrode chamber, which can effectively occupy more process volume in the process chamber, thereby reducing the gas volume in the process chamber, thereby improving the gas switching efficiency in the process chamber and shortening the process cycle.

[0025] The semiconductor etching equipment of the present invention uses a bellows to seal the connection between the lifting mechanism and the top of the sealed cavity, thereby completely isolating the atmospheric environment in the sealed cavity and the lower electrode chamber from the vacuum environment in the process chamber.

[0026] The semiconductor etching equipment of the present invention, through the cooperation of the first flange, the first guide sleeve and the first mounting base, causes the first mounting base to be pressed down when it is fixed, which in turn drives the first guide sleeve to be pressed down. In turn, the guide sleeve generates downward pressure on the first flange, and finally achieves a tight connection between the first flange and the top of the sealing cavity, thereby improving the sealing effect between the first flange and the top of the sealing cavity.

[0027] In the semiconductor etching apparatus of this invention, the bellows interior and the process chamber are connected through a second vent on the first mounting base, a first vent on the first guide sleeve, and a first air guide groove, facilitating the balance of internal air pressure during bellows expansion and contraction. The second vent and the first vent are connected by the second air guide groove, eliminating the need to align the second vent with the first vent when installing the first mounting base onto the outside of the first guide sleeve, thus simplifying the installation process and improving operational convenience. Furthermore, the inclined design of the second vent allows gas to be discharged at an angle during bellows compression, ensuring that the exhaust direction of the second vent is substantially consistent with the exhaust direction of the process chamber, preventing changes in the movement direction of particles within the process chamber and thus affecting the cleanliness of the process chamber.

[0028] The semiconductor etching equipment of the present invention prevents the guide rod from rotating during the lifting and lowering process by cooperating with the guide rod and the limit key, and by cooperating with the second constraint surface of the step hole of the adjustment seat and the first constraint surface of the guide rod, thereby ensuring the stability of the support assembly connected by the adjustment seat and the guide rod.

[0029] This invention encloses the bellows inside the assembly, avoiding direct exposure to the vacuum process chamber and reducing the deposition of reaction byproducts and particulate contamination caused by vertical movement. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of the semiconductor etching equipment described in this invention.

[0031] Figure 2 for Figure 1 Cross-sectional view.

[0032] Figure 3 This is a schematic diagram of the assembly of the first guide module in the semiconductor etching equipment of the present invention.

[0033] Figure 4 This is a schematic diagram of the structure of the first mounting base in the semiconductor etching apparatus of the present invention.

[0034] Figure 5 This is a schematic diagram of the structure of the first guide sleeve in the semiconductor etching equipment of the present invention.

[0035] Figure 6 for Figure 5 Cross-sectional view.

[0036] Figure 7 This is a schematic diagram of the assembly of the second guide module in the semiconductor etching equipment of the present invention.

[0037] Figure 8 This is a schematic diagram of the assembly of the guide rod and the bellows in the semiconductor etching equipment of the present invention.

[0038] Figure 9 This is a schematic diagram of the adjustment seat in the semiconductor etching apparatus of the present invention.

[0039] Figure 10 This is a schematic diagram of the stepped hole of the adjustment seat in the semiconductor etching apparatus of the present invention.

[0040] Figure 11 This is a schematic diagram of the assembly of the adjustment seat and the ejector pin bracket in the semiconductor etching equipment of the present invention.

[0041] Figure 12 This is an assembly diagram of the semiconductor etching equipment described in this invention, showing the contact between the ejector pin and the wafer edge retaining ring.

[0042] Figure 13 This is a schematic diagram of the connecting rod structure in the semiconductor etching equipment described in this invention.

[0043] In the diagram, 11-lower electrode chamber, 12-electrostatic chuck, 13-ring assembly, 2-cylinder, 31-sealing cavity, 33-guide rod, 331-sliding groove, 332-first constraint surface, 333-second flange, 34-connecting rod, 341-fixing hole, 342-locking hole, 343-adjusting gap, 351-first flange, 352-bellows, 36-adjusting seat, 361-third section of adjusting seat, 3611-stepped hole, 3612-second constraint surface, 362-fourth flange, 363-first section of adjusting seat, 4-second guide module, 41- Second mounting base, 411-First mounting part, 412-First extension part, 42-Gland, 421-Limit key, 422-Second mounting part, 423-Second extension part, 43-Second guide sleeve, 51-First guide sleeve, 511-First vent, 512-First vent groove, 513-Second vent groove, 52-First mounting base, 521-Second vent, 522-Third flange, 6-Support assembly, 61-Ejector pin bracket, 611-First lug, 62-Ejector pin, 7-Sealing ring, 8-Wafer edge pressure ring, 81-Positioning groove, 82-Second lug. Detailed Implementation

[0044] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0045] In the description of this invention, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0046] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0047] Existing semiconductor etching equipment includes a process chamber and a lower electrode chamber, an electrostatic chuck, and a ring assembly located inside the process chamber. The electrostatic chuck is positioned at the top of the lower electrode chamber and is used to place the wafer. The ring assembly surrounds the electrostatic chuck, and a wafer edge retainer ring can be placed on the surface of the ring assembly to prevent excessive etching rates at the wafer edges. To facilitate the placement and removal of the wafer edge retainer ring, a lifting mechanism is provided in the lower electrode chamber. This lifting mechanism can move up and down; when the lifting mechanism rises, its top passes through the ring assembly and removes the wafer edge retainer ring from the ring assembly; when the lifting mechanism descends, its top descends into the interior of the lower electrode chamber, placing the wafer edge retainer ring onto the ring assembly. The separation of the wafer edge retainer ring and the ring assembly is controlled by the lifting and lowering movement of the wafer edge retainer ring.

[0048] However, because the lifting mechanism is located in the lower electrode chamber, it occupies a significant amount of space, leaving little room for installation and maintenance. This is detrimental to the installation and maintenance of the lifting mechanism, as well as other components within the lower electrode chamber (e.g., the introduction structures for RF current and DC current). Furthermore, the fact that the top of the lifting mechanism can extend through the ring assembly affects the sealing performance of the lower electrode chamber. Since the lower electrode chamber is typically an atmospheric environment, while the process chamber is usually a vacuum environment, the sealing performance of the lower electrode chamber impacts the sealing reliability of the process chamber, thereby affecting the wafer etching quality.

[0049] To solve the above technical problems, such as Figure 1 and Figure 2 As shown, the present invention provides a semiconductor etching apparatus. By providing a sealed cavity 31 communicating with the lower electrode chamber 11 on the outside of the lower electrode chamber 11, and by placing the lower part of the guide rod assembly for supporting the wafer edge pressure ring 8 in the lifting mechanism in the sealed cavity 31, space in the lower electrode chamber 11 is effectively saved.

[0050] For details, please see Figure 1 and Figure 2 The semiconductor etching apparatus includes a process chamber, a lower electrode chamber 11 located inside the process chamber, a lifting mechanism, and a wafer edge retaining ring 8. The lower electrode chamber 11 is connected to the lifting mechanism, and the top of the lifting mechanism supports the wafer edge retaining ring 8. The lifting mechanism includes a sealing cavity 31, a support assembly, a guide rod assembly, a drive assembly, and a guide assembly. The sealing cavity 31 is sealed to the outer wall of the lower electrode chamber 11 and communicates with the internal space of the lower electrode chamber 11. The support assembly 6 supports the wafer edge retaining ring 8. The guiding assembly includes a guide rod 33 and a bellows. The lower part of the guide rod 33 is installed inside the sealing cavity 31, and the upper part of the guide rod 33 extends out of the sealing cavity 31 and is rigidly connected to the support assembly 6. The bellows 352 is sleeved on the outside of the guide rod 33. The first flange 351 is connected to the top of the bellows 352. The first flange 351 is sealed to the upper end face of the sealing cavity 31, isolating the internal and external vacuum from the atmospheric environment. The driving assembly is disposed inside the lower electrode chamber 11. The driving assembly is rigidly connected to the guide rod 33 to drive the guide rod 33 to rise and fall. The guiding assembly is disposed in the upper and / or lower part of the sealing cavity and is adapted to the guide rod to constrain the rising, falling, and rotating movements of the guide rod.

[0051] The process chamber is a vacuum environment, and the gas in the process chamber can be a process gas; the sealed cavity 31 and the lower electrode cavity connected to it are in an atmospheric environment.

[0052] The sealing cavity 31 is fixed to the outer side of the side wall of the lower electrode chamber 11 and forms a seal.

[0053] Furthermore, the core of the semiconductor etching equipment of the present invention, when using Bosch technology for deep silicon etching, lies in forming a deep silicon structure with a high aspect ratio and vertical sidewalls through repeated, alternating etching and passivation cycles. Specifically, the process involves: in the etching stage, introducing etching gas and exciting plasma to etch the silicon; in the passivation stage, introducing passivation gas to deposit a protective layer on the surface of the etching tank to suppress lateral etching of the sidewalls of the etching tank. Therefore, rapid switching between etching gas and passivation gas is crucial in this process. The lifting mechanism in this application is located inside the process chamber. Compared to the prior art where the lifting mechanism is installed in the lower electrode chamber, the solution of the present invention can occupy more process volume in the process chamber, thereby reducing the gas volume within the process chamber and improving the switching efficiency of etching gas and passivation gas, thus shortening the process cycle.

[0054] Furthermore, such as Figure 2 and Figure 8 As shown, the top of the sealing cavity 31 is provided with a first recessed platform, and a sealing groove is machined on the surface of the first recessed platform. A sealing ring 7 is installed in the sealing groove. The first flange 351, located at the top of the bellows, is embedded in the first recess at the top of the sealing cavity 31. The first flange 351 is sealed and isolated from the first recess by the sealing ring 7. The lower part of the guide rod 33 is machined with a second flange 333, which is sealed to the bellows 352.

[0055] The two ends of the bellows 352 are respectively connected to the first flange 351 and the second flange 333. The upper end of the bellows 352 is sealed to the first flange 351, and the two can be connected by welding, that is, the first flange 351 is sealed to the top wall of the bellows 352, and the bellows 352 is made of metal; the lower end of the bellows 352 is sealed to the second flange 333, and the two can also be connected by welding. At this time, the top of the sealing cavity 31 is sealed by the bellows 352. The space formed by the inner wall of the sealing cavity 31 and the outer surface of the bellows 352 is connected to the space formed by the inner wall of the lower electrode chamber 11, while being isolated from the internal space of the bellows 352. The internal space of the bellows 352 (i.e., the gas in the bellows 352) is connected to the process chamber. When the guide rod 33 rises and falls, the guide rod 33 drives the second flange 333 to rise and fall, thereby causing the bellows 352 to extend and retract. At this time, the gas in the bellows 352 is either drawn into the bellows 352 from the process chamber or discharged from the bellows 352.

[0056] Furthermore, to ensure that the guide rod 33 can move up and down in the vertical direction, such as... Figure 3 As shown, the guiding assembly also includes a first guiding module fixed to the top of the sealing cavity 31. Meanwhile, to ensure communication between the inside of the bellows 352 and the process chamber, the first guiding module includes: a first guide sleeve 51 and a first mounting base 52; and the first guide sleeve 51 has a first guide hole extending along its axial direction; see [link to documentation]. Figure 5 and Figure 6 The first guide sleeve 51 has several first air holes 511 perpendicular to the wall surface on its sidewall. The inner wall of the first guide sleeve 51 has several first air guide grooves 512 communicating with the first air holes 511. The extending direction of the first air guide grooves 512 is parallel to the axial direction of the first guide sleeve 51. Each first air guide groove 512 corresponds to and communicates with one of the first air holes 511. The first air guide grooves 512 communicate with the internal space of the bellows 352, allowing gas in the process chamber to enter the first air guide grooves 512 along the first air holes 511, and then enter the bellows 352. (See also...) Figure 3 and Figure 4 The first mounting base 52 is sleeved on the outside of the first guide sleeve 51 and fixed at the top of the sealing cavity 31; the first mounting base 52 is provided with a plurality of second air holes 521 that communicate with the first air hole 511.

[0057] The first air hole 511 is vertically connected to the first air guide groove 512 and they correspond one-to-one.

[0058] In the preferred embodiment, see Figure 6 The first air guide groove 512 extends along the axial direction (i.e., the vertical direction) of the first guide sleeve 51.

[0059] Further, see Figure 5 A plurality of the first air holes 511 are distributed circumferentially along the first guide sleeve 51. A second air guide groove 513 communicating with the first air holes 511 is provided on the outer side of the first guide sleeve 51, thereby increasing the opening size for gas to enter the first air hole 511 from the second air hole 521. In a preferred embodiment, as shown... Figure 5 As shown, the second air guide groove 513 is an annular air guide groove.

[0060] Preferably, a plurality of the first air holes 511 are evenly distributed along the circumferential direction of the first guide sleeve 51.

[0061] The plurality of second air holes 521 are formed on the side wall of the first mounting base 52, corresponding to the position of the second air guide groove 513 on the outer side of the first guide sleeve 51.

[0062] Optionally, the second air guide groove 513 is a complete annular air groove.

[0063] Further, see Figure 2 and Figure 5 The second air hole 521 is spaced circumferentially along the first mounting base 52; the second air guide groove 513 communicates with the second air hole 521. Due to the arrangement of the second air guide groove 513, the second air hole 521 and the first air hole 511 do not need to be precisely aligned circumferentially. The second air hole 521 only needs to ensure that its position is within the circumferential coverage area of ​​the second air guide groove 513 on the side wall of the first mounting base 52, and the second air hole 521 and the first air hole 511 can be connected through the second air guide groove 513 without the need for precise radial alignment.

[0064] See Figure 2 and Figure 8 When the guide rod 33 rises, the bellows 352 is compressed, causing the gas in the bellows 352 to enter the guide rod in the process chamber in sequence through the first air guide groove 512, the first air hole 511, the second air guide groove 513, and the second air hole 521.

[0065] In one embodiment, an exhaust port is provided at the bottom of the process chamber, and the gas in the process chamber is discharged from top to bottom. If particulate matter is present in the process chamber, the particulate matter will also move downwards along with the direction of gas extraction. To prevent the expansion and contraction of the bellows during the lifting and lowering of the guide rod from changing the direction of movement of the particulate matter, see [reference needed]. Figure 3 and Figure 4 Each of the second air holes 521 includes a first end and a second end. The first end of the second air hole 521 is located on the inner wall surface of the first mounting base 52, and the second end of the second air hole 521 is located on the outer wall surface of the first mounting base 52; and the position of the first end of the second air hole 521 is higher than that of the second end of the second air hole 521. At this time, when the guide rod 33 rises, the bellows 352 is compressed. The gas in the bellows 352 is blown from the first end to the second end of the second air hole 521 when passing through the second air hole 521, so that the gas in the bellows 352 blows downward, preventing the compression of the bellows 352 from changing the direction of particle movement in the process chamber, thereby affecting the cleanliness of the process chamber.

[0066] Further, see Figure 3The top surface of the first mounting base 52 has a second guide hole, which is coaxial with the first guide hole and slightly larger in diameter. The guide rod 33 passes through the second guide hole and engages with the first guide hole to constrain the vertical movement of the guide rod. The guide rod 33 is guided by the walls of the first and second guide holes, ensuring that the guide rod 33 moves vertically up and down. The upper end face of the first guide sleeve 51 engages with the inner top wall of the first mounting base 52 for constraint, and the lower end face of the first guide sleeve 51 engages with the first flange 351 for constraint, thereby constraining the vertical position of the first guide sleeve 51. The top surface of the first flange 351 has a second countersunk platform, and the first guide sleeve 51 and the second countersunk platform are concentric. The bottom end of the first mounting base 52 has a third flange 522, which extends radially outward along the first mounting base 52 and is fixed to the top of the sealing cavity 31.

[0067] When fixing the first mounting base 52, the first mounting base 52 is sleeved on the outside of the first guide sleeve 51, so that the inner top wall of the first mounting base 52 abuts against the top of the first guide sleeve 51, and the first mounting base 52 is pressed down. During the installation of the first mounting base 52, the first mounting base 52 is pressed down, and the first mounting base 52 transmits the downward pressure from its inner top wall through the first guide sleeve 51 to the first flange 351, until the third flange 522 of the first mounting base 52 contacts the top of the sealing cavity 31, realizing the pressing connection of the first flange 351 to the top of the sealing cavity 31.

[0068] Further, see Figure 7 The guiding assembly further includes a second guiding module 4 fixed to the bottom end of the sealing cavity 31. The second guiding module 4 is sleeved on the bottom of the guide rod 33 and guides the guide rod 33 through the second guiding module 4. The second guiding module 4 and the first guiding module are coaxially arranged, so that the guide rod 33 is constrained by the first guiding module and the second guiding module 4, ensuring the verticality of the lifting movement.

[0069] Specifically, the second guide module 4 includes a second mounting base 41 and a pressure cap 42. The second mounting base 41 includes a first mounting portion 411 and a first extension portion 412. The first mounting portion 411 is fixed to the bottom end of the sealing cavity and achieves a sealing connection; the bottom end of the sealing cavity 31 has an opening, and the first extension portion 412 extends into the sealing cavity 31 through the opening and is concentrically constrained; the first mounting portion 411 and the first extension portion 412 are provided with through stepped holes along the axial direction, that is, the second mounting base 41 has through stepped holes along its axial direction.

[0070] The pressure cap 42, used to close the stepped through hole, includes a second mounting portion 422 and a second extension portion 423. The second mounting portion 422 closes the bottom end of the stepped through hole, and the second mounting portion 422 and the first mounting portion 411 cooperate to close the opening at the lower end of the sealing cavity 31. The second extension portion 423 extends into the stepped through hole; the second extension portion 423 has a blind hole (i.e., a hole structure with one end closed and the other end open) extending along its axial direction, and the bottom end of the guide rod 33 is inserted into the blind hole to accommodate the movement stroke of the guide rod 33 at the bottom.

[0071] Further, see Figure 7 The second guide module 4 further includes a second guide sleeve 43, which is sleeved on the outside of the guide rod 33. The second guide sleeve 43 is installed in the stepped through hole and is concentric with the stepped through hole; the upper end face of the second guide sleeve 43 abuts and constrains the stepped surface in the stepped through hole; the lower end face of the second guide sleeve 43 is pressed and fixed by the upper end face of the second extension 423, thereby realizing the concentricity of the second guide sleeve 43 relative to the second mounting base 41 and limiting its vertical movement.

[0072] In a preferred embodiment, the friction coefficient of the second guide sleeve 43 is lower than that of the pressure cap 42, to prevent the guide rod from generating particulate matter due to its up-and-down movement in the second guide module 4, thereby affecting the cleanliness of the sealing cavity 31.

[0073] For further information, please see [link / reference]. Figure 7 and Figure 8 To prevent the guide rod 33 from rotating around its axis during the lifting process, the second guide module 4 also includes a limit key 421.

[0074] Specifically, the inner wall of the second mounting base 41 is provided with a keyway along the axial direction above the stepped through hole, and the bottom of the keyway is flush with or higher than the stepped surface. The outer side wall of the lower part of the guide rod 33 is provided with a sliding groove 331 that cooperates with the limiting key 421 (e.g. Figure 8 As shown, the sliding groove 331 extends along the axial direction of the guide rod 33; the limiting key 421 is embedded in the keyway and slides in cooperation with the sliding groove; the lower end of the limiting key abuts against the second guide sleeve 43 for constraint. When the guide rod 33 moves up and down, the limiting key 421 slides in the sliding groove 331 of the guide rod 33, ensuring that the guide rod 33 does not rotate.

[0075] For further information, please see [link / reference]. Figure 1 and Figure 12The support assembly 6 includes a pin holder 61 and a plurality of pins 62. The pin holder 61 is fixed to the top of the guide rod 33 and can move up and down together with the guide rod 33; the plurality of pins 62 are evenly fixed on the pin holder 61 and are used to support the wafer edge pressure ring 8.

[0076] For further information, please see [link / reference]. Figure 1 and Figure 2 The semiconductor etching apparatus further includes an electrostatic chuck 12 and a ring assembly 13. The electrostatic chuck 12 is located at the top of the lower electrode chamber 11 and is used to fix the wafer. The ring assembly 13 is arranged around the electrostatic chuck 12. During the process, the guide rod 33 is in a lowered position, at which time the wafer edge clamping ring 8 is assembled on the top surface of the ring assembly 13.

[0077] When the wafer to be processed is placed on the electrostatic chuck 12, the guide rod 33 descends, driving the support assembly 6 and the wafer edge pressure ring 8 to descend from height position A to height position B, so that the wafer edge pressure ring 8 is placed on the ring assembly 13; The support component 6 continues to descend to height position C, so that the wafer edge pressure ring 8 is completely separated from the ejector pin 62; at this time, the wafer can be etched.

[0078] After the wafer etching process is completed, the guide rod 33 rises, driving the support assembly 6 from height position C to height position B, so that the ejector pin 62 contacts the wafer edge retaining ring 8; then the guide rod 33 continues to drive the support assembly 6 and the wafer edge retaining ring 8 to rise to height position A, so that the support assembly 6 is reset to facilitate wafer transfer.

[0079] When the wafer edge retaining ring 8 is supported on the ring assembly 13 and the wafer is placed on the electrostatic chuck 12, the orthographic projection of the inner peripheral edge of the lower surface of the wafer edge retaining ring 8 onto the plane where the upper surface of the wafer is located forms a radially small overlapping area with the outer peripheral edge of the upper surface of the wafer, effectively preventing damage caused by insufficient protection of the edge part of the wafer during the etching process.

[0080] For further information, please see [link / reference]. Figure 2 The ejector pin holder 61 is annular, and the outer diameter of the ring assembly 13 is smaller than the inner diameter of the ejector pin holder 61, so that the wafer edge pressure ring 8 can be placed on the ring assembly 13; the inner diameter of the wafer edge pressure ring 8 is smaller than the inner diameter of the top end of the ring assembly 13, so that the wafer edge pressure ring 8 has a positive projection onto the plane where the upper surface of the wafer is located.

[0081] For further information, please see [link / reference]. Figure 1 and Figure 2The ejector pin holder 61 has a plurality of first lugs 611 evenly distributed along its edge, and the ejector pins 62 are disposed on the first lugs 611; the wafer edge retaining ring 8 has second lugs 82 corresponding to the first lugs 611 along its edge, and the lower surface of the second lugs 82 has a plurality of positioning grooves 81 corresponding one-to-one with each of the ejector pins 62 (e.g., ...). Figure 12 (As shown). When the wafer edge retaining ring 8 is supported by the ejector pins 62 on the ejector pin holder 61, each ejector pin 62 is inserted into its corresponding positioning groove 81, ensuring that the wafer edge retaining ring 8 is stably placed on the support assembly 6.

[0082] Furthermore, four first lugs 611 are evenly arranged on the edge of the ejector pin holder 61, and each first lug 611 is provided with an ejector pin 62, that is, there are four ejector pins 62 in total; four second lugs 82 are evenly arranged on the edge of the wafer edge retaining ring 8, which correspond one-to-one with each of the first lugs 611. The four second lugs 82 correspond one-to-one with the four ejector pins 62, so that when the wafer edge retaining ring 8 is supported by the ejector pins 62 on the ejector pin holder 61, the four evenly distributed ejector pins 62 can provide uniform support force to each position of the wafer edge retaining ring 8.

[0083] Furthermore, the positioning groove 81 is a conical groove, forming a self-aligning structure, which facilitates the insertion of the ejector pin 62 into the corresponding positioning groove 81.

[0084] Furthermore, the wafer edge retaining ring 8 is made of ceramic material, and the surface of the wafer edge retaining ring 8 is coated with a yttrium oxide coating to prevent the gas in the process chamber from corroding the wafer edge retaining ring 8.

[0085] For further information, please see [link / reference]. Figure 2 and Figure 13 The drive assembly includes a cylinder 2 and a connecting rod 34. The cylinder is fixed to the inner wall of the lower electrode chamber 11 and includes a cylinder push rod; one end of the connecting rod 34 is fixedly connected to the guide rod 33, and the other end is fixedly connected to the cylinder push rod.

[0086] When cylinder 2 is inflated, cylinder 2 pushes the cylinder push rod (i.e. Figure 2 The cylinder push rod moves downwards, and the guide rod 33 moves downwards via the connecting rod 34; when the cylinder 2 adjusts the air intake direction, the cylinder 2 retracts the cylinder push rod (i.e., Figure 2 The cylinder push rod moves upward, and the guide rod 33 moves upward through the connecting rod 34.

[0087] Furthermore, to improve the applicability of the linkage, please refer to [link / reference needed]. Figure 13The connecting rod 34 has locking structures at both ends. Each locking structure includes a fixing hole 341, an adjustment gap 343, a locking hole 342 perpendicular to the fixing hole 341, and a fixing member that mates with the locking hole 342. The fixing hole 341 accommodates a cylinder push rod or a guide rod 33; wherein, the fixing hole 341 of the connecting rod 34 in the lower electrode chamber 11 accommodates the cylinder push rod, and the fixing hole 341 of the connecting rod 34 in the sealing chamber 31 accommodates the guide rod 33. The adjustment gap 343 extends from the side wall of the fixing hole 341 to the surface of the connecting rod 34, dividing the connecting rod 34 into a first adjustment part and a second adjustment part connected by the hole wall of the fixing hole 341. The locking hole 342 penetrates the first adjustment part and extends into the interior of the second adjustment part. The fixing member is inserted into the locking hole 342. By rotating the fixing member, the first adjusting part and the second adjusting part are moved closer or further apart to reduce or increase the clamping space of the fixing hole 341, so that the locking hole 342 of the connecting rod 34 can clamp the guide rod 33 and the cylinder push rod. See [reference needed]. Figure 2 .

[0088] Furthermore, the support assembly also includes an adjustment seat 36, through which the guide rod is connected to the ejector pin bracket.

[0089] For details, see Figure 9 , Figure 10 and Figure 11 The adjusting seat 36 sequentially includes a first section 363, a second section, and a third section 361. The first section 363 of the adjusting seat has an outer cylindrical structure and is inserted into the mating hole of the ejector pin bracket 61. The second section of the adjusting seat 36 is a fourth flange 362, which extends radially outward to form a fourth flange 362. The fourth flange 362 is connected and fastened to the ejector pin bracket 61 to fix the ejector pin bracket 61 and the guide rod 33. The third section 361 of the adjusting seat has a stepped hole 3611 along its axial direction. The stepped hole 3611 is a strip-shaped groove structure composed of a plane and an arc surface. The top end of the guide rod 33 is inserted into the stepped hole 3611.

[0090] The connection structure between the ejector pin bracket 61 and the fourth flange 362 includes multiple fastening screws and multiple leveling screws (e.g., 3 leveling screws) to adjust the level of the ejector pin bracket 61.

[0091] Specifically, the ejector pin bracket has a plurality of first mounting holes along the thickness direction, and the fourth flange has a second mounting hole along the thickness direction that corresponds one-to-one with each of the first mounting holes; The ejector pin bracket is fixedly connected to the adjusting seat via a plurality of fasteners passing through the first mounting hole and the second mounting hole; To ensure that the ejector pin bracket can be horizontally fixed at the top of the guide rod, the fourth flange has several threaded holes (not shown) along the thickness direction, and a leveling threaded component is screwed into each of the several threaded holes; The leveling threaded component is configured to adjust the levelness of the ejector pin bracket by screwing its end against the lower end face of the ejector pin bracket.

[0092] When using it, you can first adjust the level of the ejector pin bracket by turning the leveling threaded part. After adjusting the ejector pin bracket to be level with the leveling threaded part, tighten the fastener.

[0093] The fasteners can be set to 4, and the leveling threaded parts can be set to 3; the threaded holes are evenly distributed on the fourth flange.

[0094] In a preferred embodiment, when the adjusting seat 36 is fitted onto the top of the guide rod 33, the upper surface of the fourth flange 362 is horizontal. At this time, by tightly attaching the lower surface of the ejector pin bracket 61 to the upper surface of the fourth flange 362, the horizontal fixation of the ejector pin bracket can be ensured.

[0095] For further information, please see [link / reference]. Figure 8 and Figure 9 At the connection point between the top end of the guide rod 33 and the ejector pin bracket 61, a first constraint surface 332 is machined on the side wall of the top end of the guide rod 33. The stepped hole 3611 of the adjusting seat 36 has a second constraint surface 3612 that matches the first constraint surface 332. When the guide rod 33 is inserted into the stepped hole 3611, the first constraint surface 332 contacts the second constraint surface 3612 to restrict the rotation of the guide rod 33. The first constraint surface 332 and the second constraint surface 3612 are both strip-shaped; the two strip-shaped surfaces cooperate to form a hole-shaft connection, constraining concentricity and stopping rotation.

[0096] In summary, the semiconductor etching equipment of the present invention expands the usable volume of the atmospheric environment in the semiconductor etching equipment by setting a sealed cavity that is sealed to the outer wall of the lower electrode chamber, which facilitates the installation and maintenance of the lifting mechanism. At the same time, the bellows is used to seal and isolate the atmospheric installation end and the vacuum end in the process chamber. The bellows is also shielded in the vacuum environment, avoiding direct exposure to the process environment and reducing the risk of particulate contamination during particulate deposition and vertical movement.

[0097] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A semiconductor etching apparatus, characterized in that, include: The process chamber, as well as the lower electrode chamber, lifting mechanism, and wafer edge pressure ring located inside the process chamber; The lower electrode chamber is connected to the lifting mechanism, and the top of the lifting mechanism supports the wafer edge pressure ring; The lifting mechanism includes: A sealed cavity is sealed to the outer wall of the lower electrode chamber, and the sealed cavity communicates with the internal space of the lower electrode chamber; Support assembly, the support assembly being configured to support the wafer edge retaining ring; A guide rod assembly includes a guide rod and a bellows; the lower part of the guide rod is installed inside the sealing cavity, and the upper part of the guide rod extends out of the sealing cavity and is rigidly connected to the support assembly; the bellows is sleeved outside the guide rod, one end of the bellows is installed at the top of the sealing cavity through a first flange, and the other end is sealed to the guide rod. A drive assembly is disposed inside the lower electrode chamber; the drive assembly is rigidly connected to the guide rod assembly to drive the guide rod assembly to move up and down; A guide assembly is disposed in the upper and / or lower part of the sealed cavity and is adapted to the guide rod to constrain the lifting and rotating movements of the guide rod.

2. The semiconductor etching apparatus according to claim 1, characterized in that, The top of the sealing cavity is provided with a first recessed platform, and a sealing groove is machined on the surface of the first recessed platform. A sealing ring is installed in the sealing groove. The first flange located at the top of the bellows is embedded in the first recess at the top of the sealing cavity, and the first flange is sealed and isolated from the first recess by the sealing ring. The lower part of the guide rod is machined with a second flange, which is sealed to the bellows.

3. The semiconductor etching apparatus according to claim 1, characterized in that, The guiding assembly includes a first guiding module fixed to the upper end of the sealing cavity, the first guiding module comprising: A first guide sleeve has a first guide hole extending along its axis through it; the side wall of the first guide sleeve has a plurality of first air holes perpendicular to the wall surface; the inner wall of the first guide sleeve has a plurality of first air grooves opened along the axis, and the first air grooves are connected to the first air holes one by one; the first air grooves are connected to the internal space of the corrugated pipe; the outer side of the first guide sleeve is provided with a second air groove connected to the first air holes, and the second air groove is an annular air groove. The first mounting base is sleeved on the outside of the first guide sleeve and fixed at the top of the sealing cavity; the side wall of the first mounting base is provided with a plurality of second air holes, the second air holes being positioned corresponding to the second air guide groove.

4. The semiconductor etching apparatus according to claim 3, characterized in that, The second air vents are spaced apart along the circumference of the first mounting base; the second air guide groove communicates with the second air vents; Each of the second air holes includes a first end and a second end, wherein the first end of the second air hole is located on the inner wall surface of the first mounting base, and the second end of the second air hole is located on the outer wall surface of the first mounting base; and the position of the first end of the second air hole is higher than that of the second end of the second air hole.

5. The semiconductor etching apparatus according to claim 3, characterized in that, The top surface of the first mounting base is provided with a second guide hole, which is coaxial with the first guide hole. The diameter of the second guide hole is larger than that of the first guide hole. The guide rod passes through the second guide hole and cooperates with the first guide hole to constrain the vertical movement of the guide rod.

6. The semiconductor etching apparatus according to claim 3, characterized in that, The upper end face of the first guide sleeve is constrained by cooperating with the inner top wall of the first mounting base, and the lower end face of the first guide sleeve is constrained by cooperating with the first flange, so as to achieve the upper and lower position constraint of the first guide sleeve. The top surface of the first flange is provided with a second recessed platform, and the first guide sleeve cooperates with the second recessed platform to achieve concentricity; The bottom end of the first mounting base is provided with a third flange, which is fixed to the top end of the sealing cavity.

7. The semiconductor etching apparatus according to claim 1, characterized in that, The guiding assembly includes a second guiding module fixed to the lower end of the sealing cavity. The second guiding module includes a second mounting base and a pressure cap, wherein: The second mounting base includes a first mounting portion and a first extension portion; the first mounting portion is fixed to the bottom end of the sealing cavity; the bottom end of the sealing cavity is provided with an opening, and the first extension portion extends into the sealing cavity through the opening; The bottom surface of the second mounting base has a stepped through hole along the axial direction; The pressure cap includes a second mounting portion and a second extension portion; the pressure cap closes the stepped through hole; the second mounting portion cooperates with the first mounting portion to close the bottom opening of the sealing cavity; the second extension portion extends into the stepped through hole; a blind hole extending axially is provided in the middle of the second extension portion to accommodate the movement stroke of the guide rod at the bottom.

8. The semiconductor etching apparatus according to claim 7, characterized in that, The second guide module also includes a second guide sleeve, which is sleeved on the outside of the guide rod; The second guide sleeve is installed inside the stepped through hole and is concentric with the stepped through hole; The upper end face of the second guide sleeve is tightly abutted and constrained against the stepped surface inside the stepped through hole; The lower end face of the second guide sleeve is pressed and fixed by the upper end face of the second extension.

9. The semiconductor etching apparatus according to claim 8, characterized in that, The second guide module also includes a limit key; The inner wall of the second mounting base is provided with a keyway along the axial direction above the stepped through hole, and the bottom of the keyway is flush with or higher than the stepped surface. The outer side wall of the lower part of the guide rod is provided with a sliding groove that cooperates with the limiting key, and the sliding groove extends along the axial direction of the guide rod; The limiting key is embedded in the keyway and slides with the sliding groove; the lower end of the limiting key is pressed and constrained against the second guide sleeve.

10. The semiconductor etching apparatus according to claim 1, characterized in that, The support assembly includes a pin holder and a plurality of pins, wherein: The ejector pin bracket is fixed to the top of the guide rod; The plurality of ejector pins are evenly fixed on the ejector pin bracket.

11. The semiconductor etching apparatus according to claim 10, characterized in that, The semiconductor etching apparatus further includes an electrostatic chuck and a ring assembly, wherein: The electrostatic chuck is located at the top of the lower electrode chamber and is used to place the wafer; The ring assembly is arranged around the electrostatic chuck, and the ring assembly is capable of supporting the wafer edge pressure ring; When the wafer edge retaining ring is supported on the ring assembly and the wafer is placed on the electrostatic chuck, the orthographic projection of the inner peripheral edge of the lower surface of the wafer edge retaining ring onto the plane containing the upper surface of the wafer forms a radially overlapping area with the outer peripheral edge of the upper surface of the wafer.

12. The semiconductor etching apparatus according to claim 11, characterized in that, The ejector pin holder is ring-shaped, and the outer diameter of the ring assembly is smaller than the inner diameter of the ejector pin holder. The inner diameter of the wafer edge clamping ring is smaller than the inner diameter of the ring assembly.

13. The semiconductor etching apparatus according to claim 10, characterized in that, The edge of the ejector pin holder is provided with a plurality of first lugs evenly distributed, and the ejector pins are disposed on the first lugs; the edge of the wafer edge retaining ring is provided with second lugs corresponding to the first lugs, and the lower surface of the second lugs is provided with a plurality of positioning grooves corresponding one-to-one with each ejector pin; when the wafer edge retaining ring is supported by the ejector pins on the ejector pin holder, each ejector pin is inserted into its corresponding positioning groove.

14. The semiconductor etching apparatus according to claim 1, characterized in that, The wafer edge retaining ring is made of ceramic material, and the surface of the wafer edge retaining ring is coated with yttrium oxide.

15. The semiconductor etching apparatus according to claim 1, characterized in that, The driving component includes: A cylinder, fixed to the inner wall of the lower electrode chamber, includes a cylinder push rod; A connecting rod, one end of which is fixedly connected to the guide rod, and the other end of which is fixedly connected to the cylinder push rod.

16. The semiconductor etching apparatus according to claim 15, characterized in that, The connecting rod is provided with locking structures at both ends. Each locking structure includes: a fixing hole, an adjustment gap, a locking hole perpendicular to the fixing hole, and a fixing member that cooperates with the locking hole. The fixing hole accommodates the cylinder push rod or guide rod; The adjustment gap extends from the sidewall of the fixing hole to the surface of the connecting rod, dividing the connecting rod into a first adjustment part and a second adjustment part connected by the wall of the fixing hole; The locking hole penetrates the first adjustment part and extends into the interior of the second adjustment part; The fastener is inserted into the locking hole. By twisting the fastener, the first adjustment part and the second adjustment part are brought closer to each other or moved further apart, so as to reduce or increase the clamping space of the fastening hole.

17. The semiconductor etching apparatus according to claim 10, characterized in that, The support assembly further includes an adjustment seat, which sequentially comprises a first section, a second section, and a third section, wherein: The first section of the adjusting seat has an outer cylindrical surface structure, into which the ejector pin bracket is inserted; The second section of the adjusting seat is the fourth flange, which is fixedly connected to the ejector pin bracket. The third section of the adjusting seat has a stepped hole along its axial direction, and the top end of the guide rod is inserted into the stepped hole.

18. The semiconductor etching apparatus according to claim 17, characterized in that, The ejector pin bracket is provided with a plurality of first mounting holes, and the fourth flange is provided with second mounting holes corresponding one-to-one with each of the first mounting holes; The ejector pin bracket is fixedly connected to the adjusting seat via a plurality of fasteners passing through the first mounting hole and the second mounting hole; The fourth flange has several threaded holes, and a leveling threaded component is screwed into each of the several threaded holes; The leveling threaded component is configured to adjust the levelness of the ejector pin bracket by screwing its end against the lower end face of the ejector pin bracket.

19. The semiconductor etching apparatus according to claim 17, characterized in that, The guide rod has a first constraint surface on its top side wall; the step hole of the adjusting seat has a second constraint surface that matches the first constraint surface. When the guide rod is inserted into the step hole, the first constraint surface contacts the second constraint surface to restrict the rotation of the guide rod.

Citation Information

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