Compositions for germanium seed layers and methods of using same

CN121344557APending Publication Date: 2026-01-16VERSUM MATERIALS US LLC
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Patent Information

Application Number
CN202511467232.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2020-07-24
Filing Date
2021-07-23
Publication Date
2026-01-16

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Abstract

The present invention relates to precursors and methods for (a) forming a silicon-containing film and (b) functionalizing a substrate surface to form a germanium seed layer suitable for depositing a Ge film. In one aspect, there is provided a precursor of Formula I and / or a precursor of Formula II as described herein.
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Citation Information

Patent Citations

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    EP1464724A2

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    US20090162973A1

  • Method for growing germanium epitaxial films

    US20110036289A1

  • Semiconductor arrangement and a method for manufacturing the same

    US20110084308A1

  • Method of forming a germanium thin film

    US20130230975A1