基于自适应曲率分割与区域拟合的高保真数字光刻方法
By using adaptive curvature segmentation and region fitting, the problems of jagged edges and linewidth errors in pattern lithography in DMD lithography are solved, achieving high-quality pattern optimization, significantly improving edge smoothness and dimensional accuracy, and making it suitable for high-precision micro-nano manufacturing.
CN121364608BActive Publication Date: 2026-07-17ANHUI POLYTECHNIC UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ANHUI POLYTECHNIC UNIV
- Filing Date
- 2025-10-27
- Publication Date
- 2026-07-17
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Figure CN121364608B_ABST
Abstract
本发明涉及基于自适应曲率分割与区域拟合的高保真数字光刻方法，包括：获取待处理曝光图像，对待处理曝光图像进行曲率分析以及自适应分割，获取若干子图像；根据子图像的曲率特征对子图像进行拟合，拟合包括：线性拟合、多项式拟合和局部拟合；基于拟合结果，获取三维纳米移动平台的位移路径，通过位移路径计算子图像的局部膨胀效应，并进行预处理，进一步对预处理后的子图像进行曝光，获取曝光图像。本发明通过自适应曲率分割和区域特异性拟合策略，有效解决了DMD光刻中的边缘锯齿和线宽误差问题，显著提高了复杂图案的曝光质量和尺寸精度，适用于高分辨率DMD光刻、多层图案化和自由形貌微结构制造等领域。
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