一种集成SCR的碳化硅MOSFET及其制作方法
By integrating SCR into the silicon carbide MOSFET, and adopting a PNPN four-layer structure and optimized terminal area design, the transient overvoltage problem at the gate and source terminals of the silicon carbide MOSFET under high voltage and high power scenarios is solved, thereby improving the reliability and adaptability of the device.
CN121368159BActive Publication Date: 2026-07-17合肥钧联汽车电子有限公司
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 合肥钧联汽车电子有限公司
- Filing Date
- 2025-11-17
- Publication Date
- 2026-07-17
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Figure CN121368159B_ABST
Abstract
本发明提供了一种集成SCR的碳化硅MOSFET及其制作方法，涉及功率半导体器件技术领域，该器件在栅极与源极之间集成有由P+区、N型外延层、P型体区及N+源区构成的PNPN四层结构，其中P+区与源极金属欧姆接触。通过协同设计P+区与N+源区的间距及掺杂浓度，使PNPN结构的正向与反向触发电压阈值可与电控主驱的非对称驱动窗口精确匹配。该结构布置于元胞区外缘或终端区，通过与有源区电隔离、设置场板抑制误触发、优化欧姆接触以加速关断，并确保维持电流高于寄生闩锁触发电流，从而在不影响主器件性能的前提下，实现对栅源间双向浪涌的快速、可靠泄放与自我保护，显著提升栅氧可靠性。
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