Thin film, light-emitting device and preparation method thereof

Abstract

The invention relates to the technical field of light-emitting devices, in particular to a thin film, a light-emitting device and a preparation method thereof. The thin film comprises a P-type layer and an N-type layer which are arranged in a stacked mode. Wherein the material of the N-type layer comprises a second host material, a first guest material and a second guest material, the second host material comprises one or more of an organic micromolecule electron transport material and an organic polymer electron transport material, the first guest material comprises an N-type metal oxide, and the second guest material comprises an organic micromolecule electron transport material and an organic polymer electron transport material. The second guest material includes an N-type organometallic dimer material. When the thin film is applied to a light-emitting device, the light-emitting efficiency and the service life of the device can be effectively improved.

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