Iii-v to silicon waveguide bonding coupling structure design method and laser

Abstract

The application provides a III-V and silicon-based waveguide bonding coupling structure design method and a laser, which comprises the following steps: determining initial geometric parameters of a III-V laser and a silicon-based waveguide coupling region; determining a maximum process alignment deviation range based on process history data; establishing a three-dimensional simulation model based on the initial geometric parameters, and offset correcting the position of the silicon-based waveguide in the bonding plane in the simulation environment according to the maximum process alignment deviation range; calculating the coupling efficiency after the offset correction, and iteratively optimizing and adjusting the width and transition zone length of the silicon-based waveguide when the coupling efficiency decreases by more than a preset threshold; repeatedly performing the offset correction and optimization adjustment until the coupling efficiency under all preset process deviation conditions meets the design requirements, and outputting the coupling structure design parameters. The application re-tunes the silicon-based waveguide structure with the best coupling efficiency by combining the maximum process deviation, so as to obtain a coupling region design which is robust to process deviation.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic integration technology, and in particular to a design method for a III-V group bonded coupling structure with a silicon-based waveguide and a laser. Background Technology

[0002] Silicon-based optoelectronic integration technology, due to its advantages such as high integration density, low power consumption, and compatibility with CMOS processes, has become a key solution in fields such as high-speed communication, data center interconnection, and photonic computing. However, silicon, as an indirect bandgap material, is difficult to achieve efficient light emission, thus requiring the introduction of III-V group lasers as on-chip light sources through heterogeneous integration technology. Wafer bonding technology is currently the mainstream integration solution, achieving high-coupling-efficiency light source integration by directly bonding III-V group laser chips to silicon-based waveguide chips. However, this technology faces significant challenges in process implementation: unavoidable process alignment deviations during bonding can lead to optical field mismatch in the coupling region, thereby reducing the overall coupling efficiency. Specifically, lateral (perpendicular to the laser emission direction in the plane) and longitudinal (parallel to the laser emission direction) displacement deviations in the bonding process can alter the evanescent wave coupling conditions between the III-V group waveguide and the silicon-based waveguide, causing the actual coupling efficiency to deviate significantly from the design optimum. Traditional design methods typically optimize coupling structure parameters only for ideal alignment conditions (such as tapered waveguide width and spindle silicon waveguide dimensions), while ignoring the impact of process deviations, resulting in inconsistent device performance during actual production. Summary of the Invention

[0003] This invention provides a design method for a III-V group bonded coupling structure with silicon-based waveguides and a laser, which solves the defects of traditional coupling structure design methods that only optimize for ideal alignment and do not consider the influence of process deviations, resulting in poor performance consistency and unstable quality of devices in actual production.

[0004] This invention provides a method for designing III-V group bonded coupling structures with silicon-based waveguides, comprising: Determine the initial geometric parameters of the coupling region between the III-V group laser and the silicon-based waveguide; Determine the maximum process alignment deviation range based on historical process data; A three-dimensional simulation model is established based on the initial geometric parameters. In the simulation environment, the position of the silicon waveguide in the bonding plane in the three-dimensional simulation model is offset and corrected according to the maximum process alignment deviation range. The coupling efficiency of the coupling region after offset correction is calculated. When the coupling efficiency drops below a preset threshold, the width and transition region length of the silicon waveguide are iteratively optimized and adjusted. Repeat the offset correction and optimization adjustment until the coupling efficiency meets the design requirements under all preset process deviations, and output the coupling structure design parameters.

[0005] According to the design method for III-V group bonded coupling structures with silicon-based waveguides provided by the present invention, the maximum process alignment deviation range includes the maximum lateral deviation and the maximum longitudinal deviation, and the determination of the maximum process alignment deviation range based on historical process data includes: Collect actual alignment deviation data from multiple sets of historical bonding processes, and statistically analyze the distribution characteristics of lateral and longitudinal deviations. Calculate the standard deviation of the lateral deviation and the standard deviation of the longitudinal deviation; The standard deviations of the lateral deviation and the longitudinal deviation are converted into the maximum lateral deviation and the maximum longitudinal deviation, respectively.

[0006] According to the design method for III-V group silicon-based waveguide bonding coupling structure provided by the present invention, the step of establishing a three-dimensional simulation model based on initial geometric parameters, and offsetting and correcting the position of the silicon-based waveguide in the bonding plane in the three-dimensional simulation model according to the maximum process alignment deviation range in the simulation environment, includes: The initial geometric parameters are imported into electromagnetic field simulation software to construct a three-dimensional simulation model containing III-V group tapered waveguides and silicon-based spindle waveguides. In the bonding plane coordinate system, the horizontal offset direction is defined as the x-axis, and the vertical offset direction is defined as the z-axis; Applying a position offset operation to the silicon-based waveguide model includes: Apply positive and negative offsets in the x-axis direction; Apply positive and negative offsets in the z-axis direction; And simultaneously apply a composite offset in the x-axis and z-axis directions.

[0007] According to the design method for III-V group bonded coupling structures with silicon-based waveguides provided by the present invention, the calculation of the coupling efficiency of the coupling region after offset correction includes: The input terminal of the III-V group waveguide is set as the TE mode light source excitation port, and the output terminal of the silicon-based waveguide is set as the power monitoring port. A constant power input is applied to the excitation port of the TE mode light source, and the position of the power monitoring port remains unchanged in all offset conditions. The steady-state electromagnetic field distribution under each offset condition is solved by the finite element method to obtain the optical field of the output section of the III-V group waveguide and the optical field of the input section of the silicon-based waveguide. The coupling efficiency is calculated based on the optical field of the output section of the III-V group waveguide and the optical field of the input section of the silicon-based waveguide.

[0008] According to the design method for III-V group bonded coupling structures with silicon-based waveguides provided by the present invention, when the coupling efficiency decreases beyond a preset threshold, the width and transition region length of the silicon-based waveguide are iteratively optimized and adjusted, including: When the coupling efficiency drops beyond a threshold under lateral deviation conditions, the maximum width of the silicon waveguide coupling region is increased by a first step length, which is calculated based on the maximum lateral deviation. When the coupling efficiency drops beyond the threshold under longitudinal deviation conditions, the length of the silicon waveguide transition region is extended by a second step, which is calculated based on the maximum longitudinal deviation. After each adjustment, the three-dimensional simulation model is regenerated and the coupling efficiency is calculated until the coupling efficiency changes under all preset deviation conditions do not exceed the threshold. The optimal silicon waveguide width and transition region length are recorded as the coupling structure design parameters.

[0009] According to the design method for III-V group bonded coupling structures with silicon-based waveguides provided by the present invention, the initial geometric parameters include: One or more of the following: minimum width of the coupling region of a III-V laser waveguide, maximum width of the coupling region of a silicon-based waveguide, length of the transition region of a silicon-based waveguide, and cone angle of the tapered gradient region of a III-V waveguide.

[0010] According to the design method of the III-V group bonded coupling structure with silicon-based waveguide provided by the present invention, the design parameters of the coupling structure further include the cone angle of the tapered gradient region of the III-V group waveguide.

[0011] The present invention also provides a bonding coupling structure, which is designed using the bonding coupling structure design method of III-V group and silicon-based waveguide described in any of the above claims.

[0012] The present invention also provides a laser comprising the bonding coupling structure described in any of the preceding claims.

[0013] The present invention provides a design method for a III-V group laser bonded coupling structure with a silicon-based waveguide and a laser. The method involves determining the initial geometric parameters of the coupling region between the III-V group laser and the silicon-based waveguide; determining the maximum process alignment deviation range based on historical process data; establishing a three-dimensional simulation model based on the initial geometric parameters; and in the simulation environment, offsetting and correcting the position of the silicon-based waveguide in the bonding plane according to the maximum process alignment deviation range. The method then calculates the coupling efficiency of the offset-corrected coupling region. When the coupling efficiency decreases beyond a preset threshold, iterative optimization and adjustment are performed on the width and transition region length of the silicon-based waveguide. This process is repeated until the coupling efficiency meets the design requirements under all preset process deviation conditions, and the coupling structure design parameters are output. The present invention achieves a robust coupling region design against process deviations by fine-tuning the silicon-based waveguide structure to obtain the optimal coupling efficiency in conjunction with the maximum process deviation. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0015] Figure 1 This is one of the flowcharts illustrating the design method of III-V group bonded coupling structure with silicon waveguide provided in the embodiments of the present invention; Figure 2 This is a schematic diagram of the region of the bonding part between the III-V group laser and the silicon waveguide provided in the embodiment of the present invention; Figure 3 This is a schematic diagram of a vertical direct coupler structure provided in an embodiment of the present invention; Figure 4 This is a schematic diagram showing the relative positions of III-V group waveguides and silicon-based waveguides in the three process deviation directions provided in the embodiments of the present invention; Figure 5 This is the second flowchart illustrating the design method of the III-V group bonded coupling structure with silicon waveguide provided in this embodiment of the invention. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0017] Figure 1 The flowchart shows the design method of III-V group bonded coupling structure with silicon waveguide provided in the embodiments of the present invention. Figure 1 As shown, the design method for III-V group bonded coupling structure with silicon-based waveguides provided in this embodiment of the invention includes: Step 101: Determine the initial geometric parameters of the coupling region between the III-V laser and the silicon-based waveguide; In this embodiment of the invention, the initial geometric parameters include, but are not limited to: Minimum width of the coupling region of III-V group laser waveguide, maximum width of the coupling region of silicon-based waveguide, length of the transition region of silicon-based waveguide, and cone angle of the tapered gradient region of III-V group waveguide, etc.

[0018] Step 102: Determine the maximum process alignment deviation range based on historical process data; Step 103: Based on the initial geometric parameters, establish a three-dimensional simulation model, and in the simulation environment, offset and correct the position of the silicon waveguide in the bonding plane in the three-dimensional simulation model according to the maximum process alignment deviation range. Step 104: Calculate the coupling efficiency of the coupling region after offset correction. When the coupling efficiency decreases beyond a preset threshold, iteratively optimize and adjust the width and transition region length of the silicon waveguide. Step 105: Repeat the offset correction and optimization adjustment until the coupling efficiency meets the design requirements under all preset process deviation conditions, and output the coupling structure design parameters.

[0019] To ensure the overall performance of silicon-based waveguide-bonded III-V lasers, firstly, the III-V laser should be capable of accepting applied current, typically requiring an integrated electrode structure. Secondly, the III-V laser should have a tapered waveguide structure with a width transition, typically requiring the waveguide width to transition from wide to narrow, reaching its minimum value in the bonding coupling region. Thirdly, the silicon-based waveguide should have a "spindle-shaped" structure, with its width transitioning from narrow to wide and then back to narrow, reaching its maximum value in the bonding coupling region, and transitioning to a single-mode waveguide after extending beyond the bonding coupling region. Finally, there should be no material isolation between the III-V laser chip (wafer) and the silicon-based waveguide chip (wafer) in the vertical direction.

[0020] The tapered or "spindle-shaped" section with varying width employs a tapered structure. The tapered structure facilitates a slow transition of the optical mode field, allowing for a lossless conversion from one optical mode to the target optical mode. Since the generation of additional stray modes during mode conversion is undesirable, the tapered structure is typically long to ensure a slow mode transition. Furthermore, because coupling requires transferring modes from the III-V laser waveguide to the silicon-based waveguide, the III-V laser waveguide should be narrowest in the coupling region to allow for greater mode leakage, while the silicon-based waveguide should be widest in the coupling region to provide stronger mode confinement. The bonding region between the III-V laser and the silicon-based waveguide has three regions, such as... Figure 2 As shown. Region I is the active gain region of the III-V laser, used to provide the laser's emission gain. Region II is the bonding coupling region, used to couple the laser's output optical field into the vertically downward silicon-based waveguide. Region III is the output region, representing the output structure of the silicon-based waveguide, typically a single-mode silicon-based waveguide. Region II is the area where the III-V waveguide directly contacts the silicon-based waveguide, and is also the area where process deviations occur.

[0021] In the coupling region, the optical field is coupled from the III-V waveguide into the silicon-based waveguide via evanescent wave coupling. This process occurs in a direct coupler in the vertical direction. Direct couplers are common on-chip basic units that can periodically couple and transform the optical field between two waveguides via evanescent wave coupling. Consider as follows... Figure 3 The vertical direct coupler structure shown consists of a III-V group waveguide and a silicon-based waveguide. Various guided modes exist in two identical waveguides with the same z-direction. These guided modes are the inherent normal modes of the waveguide structure that satisfy the waveguide boundary conditions, and these modes maintain orthogonality. When the two waveguides are close enough, a small amount of optical field leaks from the waveguide sidewalls and couples into the other waveguide as an evanescent wave. For the other waveguide, the coupled evanescent wave is equivalent to an external perturbation. At this point, the unperturbed normal modes in the optical waveguide are no longer independent but become coupled. Because lateral (width) and longitudinal (length) displacement deviations in the bonding process alter the evanescent wave coupling conditions between the III-V group waveguide and the silicon-based waveguide, the actual coupling efficiency deviates significantly from the design optimum. Traditional coupling region design methods typically optimize coupling structure parameters only for ideal alignment (such as the width of a tapered waveguide or the size of a spindle-shaped silicon waveguide), ignoring the influence of process deviations, leading to inconsistent device performance in actual production.

[0022] The method for designing a III-V group laser bonded coupling structure with a silicon-based waveguide provided in this invention involves: determining the initial geometric parameters of the coupling region between the III-V group laser and the silicon-based waveguide; determining the maximum process alignment deviation range based on historical process data; establishing a three-dimensional simulation model based on the initial geometric parameters; offsetting and correcting the position of the silicon-based waveguide in the bonding plane in the three-dimensional simulation model according to the maximum process alignment deviation range in the simulation environment; calculating the coupling efficiency of the coupling region after offset correction; iteratively optimizing and adjusting the width and transition region length of the silicon-based waveguide when the coupling efficiency decreases beyond a preset threshold; repeating the offset correction and optimization adjustment until the coupling efficiency meets the design requirements under all preset process deviation conditions; and outputting the coupling structure design parameters. This invention achieves a robust coupling region design against process deviations by fine-tuning the silicon-based waveguide structure with optimal coupling efficiency in conjunction with the maximum process deviation.

[0023] Based on any of the above embodiments, the maximum process alignment deviation range includes the maximum lateral deviation and the maximum longitudinal deviation, and determining the maximum process alignment deviation range based on historical process data includes: Step 201: Collect multiple sets of actual alignment deviation data of historical bonding processes, and statistically analyze the distribution characteristics of lateral deviation and longitudinal deviation. Step 202: Calculate the standard deviation of the lateral deviation and the standard deviation of the longitudinal deviation; Step 203: Convert the standard deviation of the lateral deviation and the standard deviation of the longitudinal deviation into the maximum lateral deviation and the maximum longitudinal deviation.

[0024] In this embodiment of the invention, the maximum lateral deviation is, for example, three times the standard deviation of the lateral deviation; the maximum longitudinal deviation is, for example, three times the standard deviation of the longitudinal deviation.

[0025] Based on any of the above embodiments, the step of establishing a three-dimensional simulation model based on the initial geometric parameters, and then correcting the position of the silicon-based waveguide in the bonding plane in the three-dimensional simulation model according to the maximum process alignment deviation range in the simulation environment, includes: Step 301: Import the initial geometric parameters into the electromagnetic field simulation software to construct a three-dimensional simulation model containing III-V group tapered waveguides and silicon-based spindle waveguides; Step 302: Define the horizontal offset direction as the x-axis and the vertical offset direction as the z-axis in the bonding plane coordinate system; Step 303: Apply a position offset operation to the silicon-based waveguide model, including: Apply positive and negative offsets in the x-axis direction; Apply positive and negative offsets in the z-axis direction; And simultaneously apply a composite offset in the x-axis and z-axis directions.

[0026] Based on any of the above embodiments, the calculation of the coupling efficiency of the coupling region after offset correction includes: Step 401: Set the input terminal of the III-V group waveguide as the TE mode light source excitation port and the output terminal of the silicon-based waveguide as the power monitoring port; Step 402: Apply a constant power input to the excitation port of the TE mode light source, keep the position of the power monitoring port unchanged in all offset conditions, and use the finite element method to solve the steady-state electromagnetic field distribution under each offset condition to obtain the optical field of the output section of the III-V group waveguide and the optical field of the input section of the silicon-based waveguide. Step 403: Calculate the coupling efficiency based on the optical field of the output section of the III-V group waveguide and the optical field of the input section of the silicon-based waveguide.

[0027] Based on any of the above embodiments, when the coupling efficiency decreases beyond a preset threshold, the width and transition region length of the silicon-based waveguide are iteratively optimized and adjusted, including: Step 501: When the coupling efficiency under the lateral deviation condition decreases beyond the threshold, the maximum width of the silicon waveguide coupling region is increased by the first step length, which is calculated based on the maximum lateral deviation. Step 502: When the coupling efficiency under longitudinal deviation conditions decreases beyond the threshold, the length of the silicon waveguide transition region is extended by a second step, which is calculated based on the maximum longitudinal deviation. Step 503: After each adjustment, regenerate the three-dimensional simulation model and calculate the coupling efficiency until the coupling efficiency changes under all preset deviation conditions do not exceed the threshold. Record the optimal silicon waveguide width and transition region length as the coupling structure design parameters.

[0028] Based on any of the above embodiments, the coupling structure design parameters also include the cone angle of the tapered gradient region of the III-V family waveguide.

[0029] Based on any of the above embodiments, this invention simulates the robustness of the coupling region between a III-V laser and a silicon-based waveguide with respect to process alignment deviations, and determines a robust coupling region design structure through simulation. After determining the geometric parameters of the III-V laser and the silicon-based waveguide, the position of the silicon-based waveguide in the bonding plane is first redefined according to the maximum process deviation. Then, the impact of process deviations on coupling efficiency is evaluated by fine-tuning the silicon-based waveguide structure. Finally, the optimal design is selected to achieve a robust coupling region. In this design, the III-V laser is loaded with an external electrical signal, supporting adjustable power and wavelength range. The coupling region between the III-V laser and the silicon-based waveguide is vertically coupled, i.e., an evanescent wave coupling region. Furthermore, there is no material isolation between the silicon-based chip (wafer) and the III-V laser chip (wafer) in the vertical direction. The III-V laser and the silicon-based waveguide are integrated by wafer bonding.

[0030] The design method for III-V group bonded coupling structure with silicon waveguide provided in this embodiment of the invention is as follows: Figure 4 As shown, the silicon-based waveguide structure with optimal coupling efficiency is first corrected for its position on the bonding plane according to the maximum process deviation, and the coupling region is simulated again after each correction. If the coupling efficiency drops below the expected value, the width and transition region length of the silicon-based waveguide should be adjusted, and the simulation iteration should continue until the coupling region stabilizes above the expected value. On the bonding plane, the lateral displacement of the silicon-based waveguide relative to the III-V group waveguide is equivalent, so only one direction needs to be considered. However, the longitudinal displacement is not equivalent, and the influence of relative position needs to be considered, requiring consideration of both directions.

[0031] The relationship between the three deviation directions is as follows: Figure 5 As shown. Every deviation during the design process should be considered based on the maximum process deviation. Process deviations originate from two aspects: one is the alignment error when aligning the III-V group laser chip with the silicon waveguide chip, and the other is the deviation between the alignment marks on the silicon waveguide and the chip. The former is limited by the precision of the bonding equipment, while the latter is limited by the linewidth of the silicon chip processing.

[0032] Potential errors during the actual bonding process include deviations in the extension direction of the final processed III-V laser and the silicon waveguide, as well as deviations in the width direction of the III-V laser and the silicon waveguide. Since the entire design is a symmetrical structure about the width direction, the deviation between the III-V laser and the silicon waveguide in the width direction only needs to be simulated in one direction. Assuming the standard deviation of the maximum alignment error of the wafer bonding platform is within 200 nm, and the processing error is relatively small, a 700 nm error can be used for simulation to maximize robustness.

[0033] With an optimal design coupling efficiency of 97% and a target of maintaining a coupling efficiency above 90%, simulations showed deviations in the elongation direction of the III-V laser and the silicon waveguide. When the deviation was 100 nm, the coupling efficiency changed very little. At a deviation of 700 nm, the coupling efficiency decreased by 4%, to 93%. At a deviation of -700 nm, the coupling efficiency decreased by 5%, to 92%. This demonstrates that deviations in the elongation direction of the III-V laser and the silicon waveguide do not significantly alter the coupling efficiency; regardless of whether the deviation is positive or negative, the coupling efficiency remains above 90%.

[0034] Simulations were performed on the deviation of a III-V group laser from the silicon waveguide along its length. When the deviation was 100 nm, the coupling efficiency decreased by 0.1%, and when the deviation was 700 nm, the coupling efficiency decreased by 15%. This indicates that deviation along the length has a significant impact. To increase the structure's tolerance to this deviation, the width of the silicon waveguide can be appropriately increased. When the width of the silicon waveguide increased to 1.4 μm, a 92% coupling efficiency was maintained even after a 700 nm deviation. Further simulations examined the degradation of coupling efficiency along the length direction, finding that the coupling efficiency was 88% when the deviation was -700 nm. Therefore, the tape transition region length was further increased; when the tape transition region length increased to 153 μm, the coupling efficiency reached 91%. Finally, tests were conducted with deviations of -700 nm in both the length and width directions, yielding a coupling efficiency of 90%, meeting the expected requirements. Although the maximum coupling efficiency decreased, all coupled structures achieved above-expected targets even with process deviations, improving the robustness of the coupled structures.

[0035] The method for designing III-V laser-silicon waveguide bonding coupling structures provided in this invention is applicable to robust coupling region design when bonding a III-V laser chip (or its wafer) with a tapered structure to a silicon waveguide chip (or its wafer) with a spindle structure. By introducing process deviations into the coupling region formed by the bonding of the III-V laser and the silicon waveguide with a defined structure, the relative positions of the silicon waveguide and the III-V laser are redefined. The impact of process deviations on coupling efficiency is evaluated by fine-tuning the silicon waveguide structure, thereby obtaining the most robust coupling region design.

[0036] This invention also provides a bonding coupling structure, which is designed using the III-V group bonded coupling structure design method for silicon-based waveguides described in any of the above embodiments.

[0037] This invention also provides a laser comprising the bonding coupling structure described in any of the above embodiments.

[0038] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0039] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the parts that contribute to the related technology, can be embodied in the form of software products. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0040] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A design method for a III-V group bonded coupling structure with a silicon-based waveguide, characterized in that, include: Determine the initial geometric parameters of the coupling region between the III-V group laser and the silicon-based waveguide; Determine the maximum process alignment deviation range based on historical process data; A three-dimensional simulation model is established based on the initial geometric parameters. In the simulation environment, the position of the silicon waveguide in the bonding plane in the three-dimensional simulation model is offset and corrected according to the maximum process alignment deviation range. The coupling efficiency of the coupling region after offset correction is calculated. When the coupling efficiency drops below a preset threshold, the width and transition region length of the silicon waveguide are iteratively optimized and adjusted. Repeat the offset correction and optimization adjustment until the coupling efficiency meets the design requirements under all preset process deviations, and output the coupling structure design parameters.

2. The design method for III-V group bonded coupling structure with silicon-based waveguides according to claim 1, characterized in that, The maximum process alignment deviation range includes the maximum lateral deviation and the maximum longitudinal deviation. Determining the maximum process alignment deviation range based on historical process data includes: Collect actual alignment deviation data from multiple sets of historical bonding processes, and statistically analyze the distribution characteristics of lateral and longitudinal deviations. Calculate the standard deviation of the lateral deviation and the standard deviation of the longitudinal deviation; The standard deviations of the lateral deviation and the longitudinal deviation are converted into the maximum lateral deviation and the maximum longitudinal deviation, respectively.

3. The design method for III-V group bonded coupling structure with silicon-based waveguides according to claim 1, characterized in that, A three-dimensional simulation model is established based on the initial geometric parameters. In the simulation environment, the position of the silicon-based waveguide in the bonding plane within the three-dimensional simulation model is offset and corrected according to the maximum process alignment deviation range, including: The initial geometric parameters are imported into electromagnetic field simulation software to construct a three-dimensional simulation model containing III-V group tapered waveguides and silicon-based spindle waveguides. In the bonding plane coordinate system, the horizontal offset direction is defined as the x-axis, and the vertical offset direction is defined as the z-axis; Applying a position offset operation to the silicon-based waveguide model includes: Apply positive and negative offsets in the x-axis direction; Apply positive and negative offsets in the z-axis direction; And simultaneously apply a composite offset in the x-axis and z-axis directions.

4. The design method for III-V group bonded coupling structure with silicon-based waveguides according to claim 1, characterized in that, The calculation of the coupling efficiency of the coupling region after offset correction includes: The input terminal of the III-V group waveguide is set as the TE mode light source excitation port, and the output terminal of the silicon-based waveguide is set as the power monitoring port. A constant power input is applied to the excitation port of the TE mode light source, and the position of the power monitoring port remains unchanged in all offset conditions. The steady-state electromagnetic field distribution under each offset condition is solved by the finite element method to obtain the optical field of the output section of the III-V group waveguide and the optical field of the input section of the silicon-based waveguide. The coupling efficiency is calculated based on the optical field of the output section of the III-V group waveguide and the optical field of the input section of the silicon-based waveguide.

5. The design method for III-V group bonded coupling structure with silicon-based waveguides according to claim 2, characterized in that, When the coupling efficiency decreases beyond a preset threshold, the width and transition region length of the silicon-based waveguide are iteratively optimized and adjusted, including: When the coupling efficiency drops beyond a threshold under lateral deviation conditions, the maximum width of the silicon waveguide coupling region is increased by a first step length, which is calculated based on the maximum lateral deviation. When the coupling efficiency drops beyond the threshold under longitudinal deviation conditions, the length of the silicon waveguide transition region is extended by a second step, which is calculated based on the maximum longitudinal deviation. After each adjustment, the three-dimensional simulation model is regenerated and the coupling efficiency is calculated until the coupling efficiency changes under all preset deviation conditions do not exceed the threshold. The optimal silicon waveguide width and transition region length are recorded as the coupling structure design parameters.

6. The design method for III-V group bonded coupling structure with silicon-based waveguide according to claim 1, characterized in that, The initial geometric parameters include: One or more of the following: minimum width of the coupling region of a III-V laser waveguide, maximum width of the coupling region of a silicon-based waveguide, length of the transition region of a silicon-based waveguide, and cone angle of the tapered gradient region of a III-V waveguide.

7. The design method for III-V group bonded coupling structure with silicon-based waveguide according to claim 1 or 5, characterized in that, The coupling structure design parameters also include the cone angle of the tapered gradient region of the III-V family waveguide.

8. A bonding coupling structure, characterized in that, The structure was designed using the bonding coupling method of III-V group and silicon-based waveguide as described in any one of claims 1 to 7.

9. A laser, characterized in that, Includes the bonded coupling structure as described in any one of claims 8.

Images