Method, apparatus, medium, and program for controlling gumming and developing

Abstract

The present application relates to the technical field of glue coating and developing, and provides a glue coating and developing control method, device, medium and program, the method comprising: controlling a first mechanical hand to execute at least one liquid treatment process in a first process unit; conveying a wafer completing the liquid treatment process to a second process module through a second mechanical hand, executing at least one heat treatment process in the second process unit; controlling an interlayer mechanical hand to transfer it from the second process module to the first process module, controlling a back washing unit in the first process unit to execute a back washing process on the wafer; after back washing, conveying the wafer to an interface module through an interlayer module; controlling an interface mechanical hand to send the wafer into a photoetching machine; and controlling the interface mechanical hand to send the wafer into a forward washing unit in the interface module to execute a forward washing process. The present application is used to realize an asymmetric cleaning glue coating and developing process with back washing in advance and forward washing in the rear, and to improve the system throughput through the cooperation of multiple module independent mechanical hands.

Description

Technical Field

[0001] This invention relates to the field of coating and developing technology, and more particularly to a control method, equipment, medium, and procedure for coating and developing. Background Technology

[0002] In related technologies, coating and developing equipment, as a key supporting equipment for photolithography, is usually used to complete pre-processing and post-processing steps such as coating, baking, developing and cleaning of wafers.

[0003] While some existing systems include cleaning processes, they often combine forward and back cleaning at the front or back end without separating functions according to process requirements. For example, placing the forward cleaning unit near the high-temperature zone can easily lead to cleaning solution evaporation or residue entering the baking unit, causing cross-contamination. Conversely, if the back cleaning unit is placed after the lithography machine, it loses its purpose of preventing lens contamination. Furthermore, multiple process modules often share the same robotic arm or rely on central scheduling, lacking independent transmission capabilities. This results in waiting between processes, especially during busy lithography machine periods, causing front-end process blockages and a decrease in overall system throughput.

[0004] Therefore, there is an urgent need for a control method, equipment, medium, and procedure for coating and developing to improve the above problems. Summary of the Invention

[0005] This invention provides a control method, equipment, medium, and program for coating and developing. This invention is used to realize an asymmetric cleaning process of coating and developing with back washing before and forward washing after, and improves the system throughput through the collaborative operation of multiple independent robotic arms.

[0006] According to a first aspect of the present invention, a control method for coating and developing is provided, applied to a coating and developing equipment. The coating and developing equipment includes a first process module, an interlayer module, a second process module, and an interface module. A first robotic arm is provided in the first process module for transferring wafers between first process units within the module. A second robotic arm is provided in the second process module for transferring wafers between second process units within the module. An interlayer robotic arm is provided in the interlayer module for transferring wafers between the first and second process modules. An interface robotic arm is provided in the interface module for transferring wafers within the interface module and between the interface module and a lithography machine. The control method includes: controlling the first robotic arm to transfer the wafer to the first process unit for coating. The process involves at least one liquid treatment process in the process of developing; transferring the wafer after liquid treatment to the second process module via a second robotic arm, and performing at least one of baking and edge exposure processes in the second process unit; controlling the interlayer robotic arm to transfer the wafer from the second process module to the first process module, and controlling the back washing unit in the first process unit to perform a back washing process on the wafer; temporarily storing the back-washed wafer in the interlayer module and then transferring it to the interface module; controlling the interface robotic arm to feed the wafer into the lithography machine to perform the lithography process; after performing the lithography process, controlling the interface robotic arm to feed the wafer into the forward washing unit in the interface module to perform the forward washing process; and sequentially returning the wafer to the second process module and the first process module to continue performing subsequent baking, developing, and optical inspection processes.

[0007] In one embodiment, before sending the wafer into the backwash unit, the method further includes: controlling an interlayer robot to send the wafer into an interlayer cooling unit for cooling, so that its temperature meets the temperature requirements for entering the first process module to perform the liquid treatment process.

[0008] In one embodiment, the backwash unit is located within a first process module, and the method includes: controlling a first robotic arm to feed a wafer into the backwash unit and then remove it.

[0009] In one embodiment, when the coating and developing equipment includes at least two columns of process paths, the portion of the process path in the first process module and the second process module is in the forward or reverse direction of the X direction; the X direction is the direction from the first process module to the second process module; the method further includes: dynamically allocating the wafer to the column with lower load according to the working state of the process unit in each column of process path, so as to balance the load between multiple columns of process paths.

[0010] In one implementation, both the interlayer module and the interface module are equipped with workstations; the method includes controlling the robotic wafer to buffer between multiple process steps through the workstations, and the workstations are shared by multiple process paths.

[0011] In one embodiment, the first process module includes N first process layers, where N is a positive integer greater than 4, and each first process layer is provided with a first robot and M1 first process units, where M1 is a positive even number; the method further includes: independently controlling the first robot in each first process layer to perform wafer transfer operations within the layer, so that multiple first process layers can process coating, developing or back washing processes of different wafers in parallel.

[0012] In one embodiment, the second process module includes N second process layers, where N is a positive integer greater than 4, and each second process layer is provided with a second robot and M2 second process units, where M2 is a positive even number; the method further includes: independently controlling the second robot in each second process layer to perform wafer transfer operations within the layer, so that multiple second process layers can process different wafer baking, edge exposure or temporary storage processes in parallel.

[0013] According to a second aspect of the present invention, a coating and developing apparatus is provided, comprising a control module, a first process module, an interlayer module, and a second process module; a first robotic arm is provided in the first process module for transferring wafers between first process units within the module; a second robotic arm is provided in the second process module for transferring wafers between second process units within the module; an interlayer robotic arm is provided in the interlayer module for transferring wafers between the first and second process modules; an interface robotic arm is provided in an interface module for transferring wafers within the interface module and between the interface module and a lithography machine; the control module is electrically connected to the robotic arms and process units in the first process module, the interlayer module, and the second process module; the control module is used to control the first robotic arm to transfer wafers. The wafer is transferred to the first process unit for at least one liquid treatment process, namely coating and developing. A second robotic arm is controlled to transfer the wafer to the second process module, where at least one process, namely baking and edge exposure, is performed. An interlayer robotic arm is controlled to transfer the wafer from the second process module to the first process module, and a back-washing unit in the first process unit performs a back-washing process on the wafer. The back-washed wafer is temporarily stored in the interlayer module and then transferred to the interface module. An interface robotic arm is controlled to feed the wafer into a lithography machine for lithography. After lithography, the interface robotic arm is controlled to feed the wafer into the forward washing unit in the interface module for forward washing. The wafer is then sequentially returned to the second and first process modules to continue with subsequent baking, developing, and optical inspection processes.

[0014] According to a third aspect of the present invention, a computer-readable storage medium is provided having a computer program stored thereon, characterized in that the above-described method can be implemented when the executable computer program in the storage medium is executed by a processor.

[0015] According to a fourth aspect of the present invention, a computer program product is provided, comprising a computer program that, when executed by a processor, implements the method described above.

[0016] Compared with existing technologies, the advantages of this invention are as follows: By setting an interlayer robot between the first and second process modules, the wafer is reverse-transferred to the liquid treatment process area after the baking process. This allows the back-washing process to be performed in the back-washing unit within the first process module, effectively removing particles from the back of the wafer and preventing them from entering the lithography machine and causing lens contamination. Simultaneously, integrating back-washing into the first process module and setting forward washing in the interface module forms an asymmetric cleaning path, avoiding cross-contamination of cleaning solutions and interference from process temperature, thus optimizing the overall process layout. Each module is equipped with an independent robot, supporting parallel processing of processes such as coating, developing, baking, edge exposure, and cleaning. Combined with the temporary storage function in the interlayer module, it can flexibly match the processing cycle of the lithography machine, reducing waiting time and improving system throughput. Attached Figure Description

[0017] Figure 1 This is a top view schematic diagram of a coating and developing apparatus according to an exemplary embodiment.

[0018] Figure 2 This is a schematic cross-sectional view of a coating and developing apparatus perpendicular to the Y direction, according to an exemplary embodiment.

[0019] Figure 3 This is illustrated according to an exemplary embodiment. Figure 1 BB cross-sectional diagram.

[0020] Figure 4 This is illustrated according to an exemplary embodiment. Figure 1 DD cross-sectional schematic diagram.

[0021] Figure 5 This is illustrated according to another exemplary embodiment. Figure 1 A schematic diagram of the AA cross-section.

[0022] Figure 6 This is illustrated according to another exemplary embodiment. Figure 1 A schematic diagram of the CC cross-section.

[0023] Figure 7 This is a schematic flowchart illustrating a control method for coating and developing adhesives according to another exemplary embodiment.

[0024] Explanation of the reference numerals in the figure: 10. First process module; 20. Interlayer module; 30. Second process module; 40. Interface module; 50. Chip box module; 1. First box robotic arm; 2. Second box robotic arm; 3. Third box robotic arm; 11. First liquid processing robot; 12. Second liquid processing robot; 13. Third liquid processing robot; 14. Fourth liquid processing robot; 15. Fifth liquid processing robot; 16. Sixth liquid processing robot; 17. First coating unit; 18. Second coating unit; 19. Developing unit; 110. Optical inspection unit; 201. First liquid treatment layer; 202. Second liquid treatment layer; 203. Third liquid treatment layer; 204. Fourth liquid treatment layer; 205. Fifth liquid treatment layer; 206. Sixth liquid treatment layer; 207. Workstation tower; 21. First inter-layer robot; 22. Second inter-layer robot; 31. First heat treatment robot arm; 32. Second heat treatment robot arm; 33. Third heat treatment robot arm; 34. Fourth heat treatment robot arm; 35. Fifth heat treatment robot arm; 36. Sixth heat treatment robot arm; 37. First baking unit; 38. Second baking unit; 39. Edge exposure unit; 310. Fourth baking unit; 311. Third baking unit; 401. First heat treatment layer; 402. Second heat treatment layer; 403. Third heat treatment layer; 404. Fourth heat treatment layer; 405. Fifth heat treatment layer; 406. Sixth heat treatment layer; 41. First interface robot arm; 42. Second interface robot arm; 44. Back wash unit; 45. Front wash unit; 46. Buffer unit; 47. Photolithography pre-cooling disc; 48. Photolithography machine; 501. Wafer loading unit; 502. Wafer return loading unit; 51. Marking and identification unit; 52. Adhesion unit; 6. Interface tower; 61. First chip box temporary storage unit; 62. Second chip box temporary storage unit; 63. First inter-layer temporary storage unit; 64. Second inter-layer temporary storage unit; 65. Third inter-layer temporary storage unit; 66. Fourth inter-layer temporary storage unit; 67. Fifth inter-layer temporary storage unit; 69. Second interface temporary storage unit; 610. Third interface temporary storage unit; 613. Sixth inter-layer temporary storage unit; 614. Seventh inter-layer temporary storage unit; 615. Eighth inter-layer temporary storage unit; 616. Ninth inter-layer temporary storage unit; 617. Third chip box temporary storage unit; 71. First interlayer cooling unit; 72. Second interlayer cooling unit; 73. Third interlayer cooling unit; 74. Fourth interlayer cooling unit; 75. Fifth interlayer cooling unit; 76. Sixth interlayer cooling unit; 77. Seventh interlayer cooling unit; 78. Eighth interlayer cooling unit; 79. Ninth interlayer cooling unit. Detailed Implementation

[0025] Unless otherwise defined, the technical or scientific terms used in this specification should have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. Specific embodiments of the invention will be described below with reference to the accompanying drawings. It should be noted that, in order to provide a concise description, this specification cannot provide a detailed description of all features of the actual embodiments. Without departing from the spirit and scope of the invention, those skilled in the art can make modifications and substitutions to the embodiments of the invention, and the resulting embodiments are also within the protection scope of the invention.

[0026] like Figure 1 and Figure 2 As shown, in a first embodiment of the present invention, a coating and developing apparatus is provided, comprising: a first process module 10, an interlayer module 20, a second process module 30, and an interface module 40; the first process module 10 includes N first process layers, where N is a positive integer greater than 4, each first process layer is provided with a first robotic arm and M1 first process units, where M1 is a positive even number, and the first process units are used to perform at least one process among coating, developing, optical inspection, and back washing; the second process module 30 includes N second process layers, each second process layer is provided with a second robotic arm and M2 second process units, where M2 is a positive even number, and the second process units are used to perform at least one process among baking, edge exposure, and temporary storage; the first process module 10 includes N first process layers, where N is a positive integer greater than 4, each first process layer is provided with a first robotic arm and M2 second process units, where M2 is a positive even number, and the second process units are used to perform at least one process among baking, edge exposure, and temporary storage; the first process module 10 includes N first process layers, where N is a positive integer greater than 4, each first process layer is provided with a first robotic arm and M1 first process units, where M1 ... second process layer is provided with a first robotic arm and M1 first process units, where M1 is a positive even number, and the second process units are used to perform at least one process among baking, edge exposure, and temporary storage; the first process module 10 includes N first process layers, where N is a positive integer greater than Both process module 10 and the second process module 30 have at least two columns of process paths symmetrically distributed along the X direction. The first and second robotic arms are used to transport wafers along the X direction. The interlayer module 20 is located between the first process module 10 and the second process module 30, and includes an interlayer robotic arm and multiple interlayer cooling units. The interlayer robotic arm docks with each column of the second robotic arm to cool the wafers processed by the second process module 30 and return them to the first process module 10. The interlayer cooling units are stacked along the Z direction. The X direction is perpendicular to the Z direction. The interface module 40 is located on the side of the second process module 30 away from the interlayer module 20, and includes a forward washing unit 45. The forward washing unit 45 is used to perform a forward washing process on the wafers.

[0027] In some specific embodiments, the first process module 10 is used to perform liquid phase processing, including N first process layers stacked vertically along the Z direction, where N is a positive integer greater than 4 (e.g., 6 or 8) to increase the process bit density per unit area. Each first process layer is provided with an independent first robot and M1 first process units, where M1 is a positive even number (e.g., 4, 6 or 8) to ensure a symmetrical layout of the process units and facilitate efficient robot scheduling. The first process unit may include at least one of a coating unit, a developing unit 19, an optical inspection unit 110, and a back washing unit 44, for completing the corresponding liquid processing process. By configuring multiple stacked layers, the first process module 10 can process multiple wafers simultaneously, significantly improving the throughput of the liquid processing process.

[0028] In other specific embodiments, the second process module 30 is used to perform heat treatment processes and temporary storage operations. It also includes N second process layers stacked along the Z direction, each layer having an independent second robotic arm and M2 second process units, where M2 is a positive even number (e.g., 4 or 6), achieving a symmetrical design and optimizing heat distribution and wafer transfer efficiency. The second process unit may include a baking unit, an edge exposure unit 39, and a buffer unit 46, used to perform pre-baking, post-edge exposure baking, edge exposure, and temporary storage processes.

[0029] In some specific embodiments, both the first process module 10 and the second process module 30 have at least two columns of process paths symmetrically distributed along the X direction, forming a dual-column or multi-column parallel architecture. The first and second robotic arms in each process path perform wafer transfer operations along the X direction (i.e., from the first process module 10 to the second process module 30) to support efficient horizontal wafer transfer within the same layer. The X direction and the Z direction (vertical direction) are perpendicular to each other, forming a three-dimensional transfer space, maximizing the utilization of the device's internal space.

[0030] In some specific embodiments, the interlayer module 20 is located between the first process module 10 and the second process module 30, serving as a bridge between the two to realize cross-module transfer of wafers and temperature regulation. The interlayer module 20 also includes an interlayer cooling unit. The interlayer robot can dock with the second robot in each row of the second process module 30 to receive wafers that have completed the heat treatment process and transfer them to the corresponding interlayer cooling unit for rapid cooling. After cooling, the interlayer robot is also used to return the wafers to the first process module 10, for example, to the back washing unit 44 to perform a back washing process, thereby removing particulate contaminants before entering the lithography machine 48 and preventing lens contamination.

[0031] In some possible embodiments, the interface module 40 is located on the side of the second process module 30 away from the interlayer module 20, directly connecting to the lithography machine 48 to complete pre- and post-lithography processing. This module includes a forward cleaning unit 45, used to clean the front side of the wafer after the lithography process, removing the standing wave enhancement layer or residual photoresist, forming an asymmetric cleaning path of "back cleaning before forward cleaning," avoiding cross-contamination between the cleaning solutions of the forward and back cleaning processes. The interface module 40 includes an interface robot for transferring wafers between the forward cleaning unit 45, the temporary storage area, and the lithography machine 48, achieving fully automated collaborative operation.

[0032] In some specific embodiments, the number of interface robotic arms is 3, specifically a first interface robotic arm 41 and a second interface robotic arm 42.

[0033] like Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, in some examples, the third thermal processing robot 33 is used to transfer the wafer after edge exposure from the edge exposure unit 39 to the interlayer robot. The interlayer robot transfers the wafer from the sixth interlayer temporary storage unit 613 to the second interlayer temporary storage unit 64, and then to the first liquid processing robot 11. The first liquid processing robot transfers the wafer into the back washing unit 44 and then returns it to the interlayer robot. The interlayer robot transfers the wafer to the first interlayer temporary storage unit 63 and then to the first thermal processing robot 31. The first thermal processing robot 31 transfers the wafer to the buffer unit 46 and then to the first interface robot 41. The first interface robot 41 sequentially transfers the wafer to the pre-lithography cold plate 47, the lithography machine 48, and the second interface temporary storage unit 69. The second interface robot 42 is used to transfer the wafer in the second interface temporary storage unit 69 to the forward washing unit 45, and to transfer the wafer in the forward washing unit 45 to the third interface temporary storage unit 610.

[0034] In other examples, the first interface robot 41 and the second interface robot 42 can be used interchangeably to meet the needs of mass production and avoid downtime caused by the failure of one of them.

[0035] In some embodiments, the interface module 40 further includes an interface robot and an interface tower 6. The interface tower 6 is arranged along the Z direction and has multiple interface temporary storage units inside for temporarily storing wafers. The interface temporary storage units are used to temporarily store wafers before or after the forward washing process.

[0036] In some specific embodiments, each interface temporary storage unit can hold at least one wafer. These interface temporary storage units are used to temporarily buffer the wafer before or after the forward washing process: for example, when the lithography machine 48 is processing other batches of wafers, the wafer that has completed forward washing can be temporarily stored in the interface temporary storage unit to wait for scheduling; or after lithography is completed but before entering the forward washing unit 45, the wafer can be sent to the interface temporary storage unit for storage to match the idle state of the forward washing unit 45.

[0037] In other specific embodiments, the interface module 40 is further provided with an interface cooling unit to cool the wafer and meet the temperature requirements of the photolithography process.

[0038] In some embodiments, the interlayer cooling units are stacked one-to-one in the Z direction; the total number of interlayer cooling units is greater than or equal to the total number of the first process units.

[0039] In some specific embodiments, each interlayer cooling unit is located at the wafer transfer height of its corresponding second or first process layer, ensuring that the interlayer robot can complete wafer transfer within the same layer height without frequent lifting and lowering, thus improving wafer transfer efficiency and positioning accuracy. The total number of interlayer cooling units is greater than or equal to the total number of all first process units in the first process module 10 (i.e., N×M1), where N is the number of first process layers and M1 is the number of first process units per layer. This configuration ensures that during high-concurrency operation, each wafer awaiting processing or that has completed thermal processing can obtain an independent cooling buffer, preventing wafers from remaining in high-temperature areas due to insufficient cooling resources.

[0040] In some embodiments, a control module is also included, which is electrically connected to the first robotic arm, the second robotic arm, the interlayer robotic arm, and the interface robotic arm, and is used to schedule the transfer path of the wafer between the modules according to the status of each process unit.

[0041] In some specific embodiments, the control module acts as the scheduling hub of the entire system. It communicates bidirectionally with the first robotic arm, the second robotic arm, the interlayer robotic arm, and the interface robotic arm via electrical connections or communication interfaces, acquiring real-time operating status, position information, and task completion status of each robotic arm. Simultaneously, the control module is also connected to all process units, including the first process unit, the second process unit, the interlayer cooling unit, and the interface temporary storage unit, to monitor the occupancy status, process progress, temperature conditions, and maintenance status of each unit. Based on the aforementioned real-time data, the control module performs dynamic scheduling of the wafer transport path: for example, when resources in a certain column of the first process module 10 are scarce, the control module can instruct the interlayer robotic arm to guide the wafer that has completed the thermal processing to the path corresponding to another column of available resources; or when the lithography machine 48 is busy, the control module can schedule the interface robotic arm to temporarily store the wafer that has completed forward washing in the interface temporary storage unit, waiting for the return conditions to be ready before continuing the transport.

[0042] In some embodiments, the first manipulator includes two independent actuators rotatable about their central axis for accessing first process units on both sides of the first manipulator in the forward and reverse directions of the Y direction; the X direction, the Y direction, and the Z direction are perpendicular to each other.

[0043] In some specific embodiments, each actuator can independently extend, retract, and rise, and can rotate 360° or within a limited range around its central axis. The robotic arm typically employs a dual-arm or dual-end structure design, with two actuators symmetrically or side-by-side mounted on the main body, enabling it to simultaneously grasp or release two wafers within the same stroke, or to access different process units. The first robotic arm is arranged along the X-direction, with first process units on either side, forming a symmetrical layout of "robotic arm in the center, process units on either side." By controlling the rotation of each actuator around its central axis, it can switch its posture between the positive and negative Y-direction, thereby enabling access to the first process units on both sides of the robotic arm. For example, one actuator rotates to a positive Y-direction angle and extends into the coating unit on the right to pick up a wafer, while the other actuator rotates to a negative Y-direction angle and accesses the developing unit 19 on the left to unload the wafer, achieving bidirectional synchronous operation and significantly improving wafer transfer efficiency. The X-direction is the main movement direction of the robot arm (from the front process module to the second process module 30), the Y-direction is the horizontal direction perpendicular to the X-direction, and the Z-direction is the vertical direction. The three directions are orthogonal to each other, forming a three-dimensional rectangular coordinate system, ensuring the positioning accuracy and path planning efficiency of each actuator in spatial movement. This dual-actuator rotary design not only reduces the number of reciprocating movements of the robot arm, but also supports the collaborative operation of multiple process units within the same layer.

[0044] In some examples, M1 is 8, and the two interlayer robots, 8 first process units, and 8 second process units are symmetrically distributed about the same symmetry plane, forming two parallel process paths; wherein, the symmetry plane passes through the line connecting the axis of the first robot and the axis of the second robot, and the line is perpendicular to the extension direction of the two process paths; each column contains one interlayer robot, 4 first process units, and 4 second process units to achieve parallel processing in two columns.

[0045] like Figure 2 and Figure 3 As shown, in another example, the two interlayer robotic arms are a first interlayer robotic arm 21 and a second interlayer robotic arm 22. A workstation tower 207 is provided between the first interlayer robotic arm 21 and the second interlayer robotic arm 22. The workstation tower 207 is fixed with a first interlayer temporary storage unit 63, a second interlayer temporary storage unit 64, a third interlayer temporary storage unit 65, a fourth interlayer temporary storage unit 66, a fifth interlayer temporary storage unit 67, a sixth interlayer temporary storage unit 613, a seventh interlayer temporary storage unit 614, an eighth interlayer temporary storage unit 615, a ninth interlayer temporary storage unit 616, a first interlayer cooling unit 71, a second interlayer cooling unit 72, a third interlayer cooling unit 73, a fourth interlayer cooling unit 74, a fifth interlayer cooling unit 75, a sixth interlayer cooling unit 76, a seventh interlayer cooling unit 77, an eighth interlayer cooling unit 78, and a ninth interlayer cooling unit 79.

[0046] In some other examples, the first interlayer manipulator 21 and the second interlayer manipulator 22 can move synchronously in mirror motion or move independently.

[0047] In some embodiments, each interlayer cooling unit is configured to be independently temperature-controlled for gradient cooling or constant temperature maintenance of the wafer according to different process requirements.

[0048] In some specific embodiments, each interlayer cooling unit is configured to be independently temperature-controlled. Each cooling unit is equipped with an independent temperature sensor and temperature control module, enabling it to individually set and maintain its operating temperature based on the specific process flow or target path of the wafer. This design allows cooling units at different levels to operate simultaneously in different temperature modes to meet diverse process requirements. For example, after the first edge exposure, a wafer needs to be rapidly cooled to a standard coating temperature (e.g., 23°C) to return to the first process module 10 for a second coating; while other wafers may need to be temporarily stored at a slightly higher temperature (e.g., 25°C) to match the thermal history requirements of specific materials. Through independent temperature control, the system can apply different cooling strategies to these wafers, achieving gradient cooling—that is, gradually cooling down from a high temperature state in stages according to a preset slope—to avoid wafer warping or film cracking due to sudden changes in thermal stress. Furthermore, for wafers that need to wait for a long time while the lithography machine 48 is idle, the corresponding cooling unit can enter a constant temperature maintenance mode to continuously stabilize the wafer temperature and prevent environmental fluctuations from affecting the accuracy of subsequent processes. The control system dynamically allocates wafers to interlayer cooling units with corresponding temperature settings based on wafer ID, process recipe, and scheduling status, and the interlayer robot performs precise wafer transfer. This independent temperature control mechanism not only improves the flexibility and accuracy of thermal management but also enhances the equipment's adaptability to multi-product mixed-line production and rework processes.

[0049] In some embodiments, the device further includes a wafer cassette module 50; the wafer cassette module 50 is located on the side of the first process module 10 away from the interlayer module 20, and is respectively located at opposite ends of the second process module 30 with the interface module 40; the wafer cassette module 50 is provided with a wafer cassette robot and a plurality of loading units, and the wafer cassette robot is configured to transfer wafers between the loading units and the first process module 10.

[0050] In some examples, the number of loading units is two, configured as an infeed loading unit 501 and a return loading unit 502. The infeed loading unit 501 is used to load the wafer to be coated and developed. The return loading unit 502 is used to load the wafer after coating and development.

[0051] In some examples, the number of wafer cassette robots is three, specifically a first wafer cassette robot 1, a second wafer cassette robot 2, and a third wafer cassette robot 3. The first wafer cassette robot 1 is used to sequentially deliver wafers from the wafer loading unit 501 to the marking and identification unit 51, the bonding unit 52, and the wafer cassette temporary storage unit; the wafer cassette temporary storage unit includes a first wafer cassette temporary storage unit 61 and a second wafer cassette temporary storage unit 62.

[0052] In other examples, the second wafer cassette robot 2 is used to transfer the optically inspected wafer from the first robot to the third wafer cassette storage unit 617, and to transfer the wafer in the third wafer cassette storage unit 617 to the third wafer cassette storage unit 617.

[0053] In other examples, the third wafer cassette robot 3 is used to move wafers from the overhead crane to the wafer loading unit 501; and to move wafers from the wafer return loading unit 502 to the overhead crane.

[0054] In some embodiments, the wafer cassette module 50 further includes a marker recognition unit 51, which is used to detect the notch or flat edge position of the wafer to determine the orientation of the wafer; the wafer cassette robot is configured to transfer the wafer from the loading unit to the marker recognition unit 51 for alignment, and send the aligned wafer into the first process module 10.

[0055] In some embodiments, the wafer cassette module 50 further includes an adhesion enhancement unit 52, which is used to coat the wafer surface with an adhesion enhancer to enhance the adhesion between the photoresist and the wafer surface; the wafer cassette robot is also configured to transfer the wafer aligned by the marking and identification unit 51 to the adhesion enhancement unit 52.

[0056] In some examples, the adhesion-enhancing unit 52 is equipped with a nozzle, a heating platform, and an exhaust system to uniformly spray hexamethyldisilazane (HMDS) onto the wafer surface, forming a monomolecular adhesion-enhancing layer. This layer reduces the polarity of the hydroxyl groups on the silicon wafer surface through a chemical reaction, improving the wettability and adhesion stability of the photoresist and preventing defects such as film peeling and edge lifting during subsequent baking or development.

[0057] In some embodiments, the wafer cassette module 50 further includes a first wafer cassette temporary storage unit 61, a second wafer cassette temporary storage unit 62, and a third wafer cassette temporary storage unit 617. The first wafer cassette temporary storage unit 61 and the second wafer cassette temporary storage unit 62 are used to temporarily store wafers transferred from the bonding unit 52 to the first process module 10. The third wafer cassette temporary storage unit 617 is used to temporarily store wafers transferred from the optical inspection unit 110 to the wafer loading unit 501.

[0058] like Figure 5As shown, in some examples, the back washing layer is a first liquid treatment layer 201, the two coating layers are a third liquid treatment layer 203 and a second liquid treatment layer 202, the two developing layers are a fifth liquid treatment layer 205 and a sixth liquid treatment layer 206, and the one optical detection layer is a fourth liquid treatment layer 204. The first liquid treatment layer 201 is equipped with a first liquid treatment robot 11; the second liquid treatment layer 202 is equipped with a second liquid treatment robot 12; the third liquid treatment layer 203 is equipped with a third liquid treatment robot 13; the fourth liquid treatment layer 204 is equipped with a fourth liquid treatment robot 14; the fifth liquid treatment layer 205 is equipped with a fifth liquid treatment robot 15; and the sixth liquid treatment layer 206 is equipped with a sixth liquid treatment robot 16.

[0059] In some embodiments, the N second process layers include at least two first baking layers, at least one cache layer, at least two second baking layers, and at least one edge exposure layer; each first baking layer includes a first baking unit 37 and a second baking unit 38; the first baking unit 37 is used to perform a first baking process on the wafer; the second baking unit 38 is used to perform a second baking process on the wafer; each second baking layer includes a third baking unit 311 and a fourth baking unit 310; the third baking unit 311 is used to perform a third baking process on the wafer; the fourth baking unit 310 is used to perform a fourth baking process on the wafer; the edge exposure layer includes an edge exposure unit 39, which is used to perform an edge exposure process on the wafer.

[0060] In a specific embodiment, the six second process layers include two first baking layers, two second baking layers, one buffer layer, and one edge exposure layer; the first baking unit 37 is used to bake the anti-reflective coating. The second baking unit 38 is used to bake the photoresist layer. The third baking unit 311 is used to bake the wafer after the development process to solidify the photoresist pattern.

[0061] like Figure 6 As shown, in some examples, the buffer layer is a first heat treatment layer 401, the two first baking layers are a third heat treatment layer 403 and a second heat treatment layer 402, the two second baking layers are a fifth heat treatment layer 405 and a sixth heat treatment layer 406, and the edge exposure layer is a fourth heat treatment layer 404. Specifically, the first heat treatment layer 401 is equipped with a first heat treatment robot 31; the second heat treatment layer 402 is equipped with a second heat treatment robot 32; the third heat treatment layer 403 is equipped with a third heat treatment robot 33; the fourth heat treatment layer 404 is equipped with a fourth heat treatment robot 34; the fifth heat treatment layer 405 is equipped with a fifth heat treatment robot 35; and the sixth heat treatment layer 406 is equipped with a sixth heat treatment robot 36.

[0062] In other examples, the second baking layer also includes a fourth baking unit 310 for baking wafers that have undergone a forward washing process.

[0063] In other specific embodiments, the backwash layer contains a backwash unit 44; the adhesive coating layer contains a first adhesive coating unit 17 and a second adhesive coating unit 18. The optical detection layer contains an optical detection unit 110; the developing layer contains a developing unit 19. The buffer layer contains a buffer unit 46; the first baking layer contains a first baking unit 37 and a second baking unit 38; the edge exposure layer contains an edge exposure unit 39; and the second baking layer contains a third baking unit 311 and a fourth baking unit 310.

[0064] like Figure 7 As shown, the second embodiment of the present invention provides a control method for coating and developing, applied to a coating and developing equipment. The coating and developing equipment includes a first process module 10, an interlayer module 20, a second process module 30, and an interface module 40. The first process module 10 is equipped with a first robotic arm for transferring wafers between first process units within the module. The second process module 30 is equipped with a second robotic arm for transferring wafers between second process units within the module. The interlayer module 20 is equipped with an interlayer robotic arm for transferring wafers between the first process module 10 and the second process module 30. The interface module 40 is equipped with an interface robotic arm for transferring wafers within the interface module 40 and between the interface module 40 and a lithography machine 48. The control method includes the following steps S1-S6: S1, control the first robotic arm to transfer the wafer to the first process unit to perform at least one liquid processing process, namely coating and developing.

[0065] S2, the wafer that has completed the liquid processing is transferred to the second process module 30 by the second robot arm, and at least one heat treatment process, namely baking and edge exposure, is performed in the second process unit.

[0066] S3, control the interlayer robot to transfer it from the second process module 30 to the first process module 10, and control the back washing unit 44 in the first process unit to perform the back washing process on the wafer.

[0067] S4, after the back-washed wafer is temporarily stored in the interlayer module 20, it is transferred to the interface module 40; the interface robot is controlled to send the wafer into the lithography machine 48 to perform the lithography process.

[0068] S5, after performing the photolithography process, the control interface robot sends the wafer into the forward washing unit 45 in the interface module 40 to perform the forward washing process.

[0069] S6, the wafer is returned sequentially to the second process module 30 and the first process module 10 to continue the subsequent baking, developing and optical inspection processes.

[0070] In some embodiments, before the wafer is fed into the backwash unit 44, the method further includes: controlling an interlayer robot to feed the wafer into an interlayer cooling unit for cooling, so that its temperature meets the temperature requirements for entering the first process module 10 to perform the liquid treatment process.

[0071] In some specific embodiments, after the wafer completes the edge exposure process in the second process module 30, it is transferred to the interlayer module 20 by the second robot arm, and then transferred to the first process module 10 by the interlayer robot arm. Subsequently, the first robot arm is controlled to send the wafer into the back washing unit 44 to perform the back washing process, removing organic matter or particulate contaminants precipitated during the heat treatment process, and preventing them from entering the lithography machine 48 and causing lens contamination.

[0072] In some embodiments, the backwash unit 44 is located within the first process module 10, and the method includes: controlling a first robotic arm to feed the wafer into the backwash unit 44 and then remove it.

[0073] In some specific embodiments, after back washing, the wafer is transferred to the buffer unit 46 in the second process module 30 by the first robotic arm and the interlayer robotic arm. After the preprocessing of the lithography machine 48 is ready, the wafer is transferred to the interface cooling unit for temperature adjustment to meet the temperature requirements of the lithography process. Finally, the interface robotic arm removes the wafer from the interface cooling unit and sends it into the lithography machine 48 to perform the lithography process.

[0074] In some embodiments, when the coating and developing apparatus includes at least two process paths, portions of the process paths in the first process module 10 and the second process module 30 are in the forward or reverse direction of the X direction; the X direction is the direction from the first process module 10 to the second process module 30; the method further includes: dynamically allocating wafers to the lower-loaded column according to the working state of the process units in each process path, so as to balance the load among multiple process paths.

[0075] In some specific embodiments, each process path includes a first process module 10, a second process module 30, and an interlayer module 20 connecting the two, forming a symmetrical or parallel processing channel. The first process module 10 and the second process module 30 are arranged sequentially along the X direction in each column, thereby achieving a spatially symmetrical layout and flexible wafer transfer path. Under this architecture, the control system monitors the working status of key process units (such as coating unit, developing unit 19, baking unit, back washing unit 44, etc.) in each process path in real time, including idle, occupied, faulty, or maintenance status. Based on this status information, the control method also includes dynamically allocating wafers to a column with lower load: for example, when a back washing unit 44 in a forward column is in a maintenance state while resources in the reverse column are idle, the scheduling system prioritizes allocating the wafer to be back washed to the reverse column to perform the corresponding process. Through this dynamic load balancing mechanism, overload or blockage of a single process path is effectively avoided, improving the overall utilization and throughput of the coating and developing equipment, while enhancing the fault tolerance for abnormal operating conditions and the flexibility of process scheduling.

[0076] In some embodiments, both the interlayer module 20 and the interface module 40 are provided with temporary storage units; the method includes controlling the robotic wafer to buffer between multiple process steps through the temporary storage units, wherein the temporary storage units are shared by multiple process paths.

[0077] In some specific embodiments, the interlayer module 20 includes an interlayer temporary storage unit, and the interface module 40 includes an interface temporary storage unit. In some examples, the temporary storage unit is shared by multiple process paths, meaning that wafers from two or more independent process paths can access the same set of temporary storage locations through their respective interlayer robots or interface robots, thus achieving resource sharing.

[0078] In some embodiments, the first process module 10 includes N first process layers, where N is a positive integer greater than 4, and each first process layer is provided with a first robot and M1 first process units, where M1 is a positive even number; the method further includes: independently controlling the first robot in each first process layer to perform wafer transfer operations within the layer, so that multiple first process layers can process coating, developing or back washing processes of different wafers in parallel.

[0079] In other embodiments, the second process module 30 includes N second process layers, where N is a positive integer greater than 4, and each second process layer is provided with a second robot and M2 second process units, where M2 is a positive even number; the method further includes: independently controlling the second robot in each second process layer to perform wafer transfer operations within the layer, so that multiple second process layers can process different wafer baking, edge exposure or temporary storage processes in parallel.

[0080] In some embodiments, the N first process layers include at least two resist coating layers, at least two developing layers, at least one backwash layer, and at least one optical detection layer; each resist coating layer includes a first resist coating unit 17 and a second resist coating unit 18; the first resist coating unit 17 is used to perform a first resist coating process on the wafer; the second resist coating unit 18 is used to perform a second resist coating process on the wafer; the developing layer includes a developing unit 19 for performing a developing process on the wafer; the optical detection layer includes an optical detection unit 110 for performing an optical detection process on the wafer.

[0081] In a specific embodiment, N is 6, and the 6 first process layers include 2 resist layers, 3 developing layers, 1 backwash layer, and 1 optical detection layer; the first resist coating unit 17 is used to apply an anti-reflective coating to the wafer surface. The second resist coating unit 18 is used to apply a photoresist layer to the wafer surface. The photoresist layer is located on the anti-reflective coating.

[0082] A third embodiment of the present invention provides a coating and developing apparatus, including a control module (not shown), a first process module 10, an interlayer module 20, and a second process module 30. The first process module includes a first robotic arm for transferring wafers between first process units within the module. The second process module includes a second robotic arm for transferring wafers between second process units within the module. The interlayer module includes an interlayer robotic arm for transferring wafers between the first and second process modules. An interface module includes an interface robotic arm for transferring wafers within the interface module and between the interface module and a lithography machine. The control module is electrically connected to the robotic arms and process units in the first process module 10, the interlayer module 20, and the second process module 30. The control module is used to control... The system controls a first robotic arm to transfer a wafer to a first process unit for at least one liquid processing process, namely coating and developing; controls a second robotic arm to transfer the wafer to a second process module for at least one thermal processing process, namely baking and edge exposure; controls an interlayer robotic arm to transfer the wafer from the second process module to the first process module, and controls a back-washing unit in the first process unit to perform a back-washing process on the wafer; after back-washing, the wafer is temporarily stored in the interlayer module and then transferred to the interface module; controls an interface robotic arm to feed the wafer into a lithography machine for lithography; after lithography, controls an interface robotic arm to feed the wafer into a forward washing unit in the interface module for forward washing; and returns the wafer sequentially to the second process module and the first process module to continue with subsequent baking, developing, and optical inspection processes.

[0083] In some examples, the control module is the central control system of the coating and developing equipment, including an industrial computer, a programmable logic controller or motion control unit, and a matching input / output interface module 40 and a communication bus. This control module is electrically connected to the robotic arm and other process units in the first process module 10, the interlayer module 20, and the second process module 30, receiving real-time status signals from sensors and sending work instructions to the robotic arm and other process units.

[0084] A fourth embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon, characterized in that, when the executable computer program in the storage medium is executed by a processor, it can implement the control method described in any one of the above embodiments.

[0085] A fifth embodiment of the present invention provides a computer program product, including a computer program, characterized in that the computer program, when executed by a processor, implements the method described in any one of the above embodiments.

[0086] In this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0087] The above description of the embodiments is intended to enable those skilled in the art to understand and apply the present invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without creative effort. Therefore, the present invention is not limited to the embodiments described herein, and any improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope and spirit of the invention are within the scope of the present invention.

Claims

1. A method for controlling the development of adhesive coating, characterized in that, This invention relates to a coating and developing equipment, comprising a first process module, an interlayer module, a second process module, and an interface module. The first process module includes a first robotic arm for transferring wafers between first process units within the module. The second process module includes a second robotic arm for transferring wafers between second process units within the module. The interlayer module includes an interlayer robotic arm for transferring wafers between the first and second process modules. The interface module includes an interface robotic arm for transferring wafers within the interface module and between the interface module and the lithography machine. The interface module is located on the side of the second process module away from the interlayer module, and directly connects to the lithography machine to complete pre- and post-lithography processing. The control method includes: The first robotic arm is controlled to transfer the wafer to the first process unit to perform at least one liquid processing process, namely coating and developing. The wafer that has completed the liquid processing is transferred to the second process module by the second robot arm, where at least one of the processes of baking and edge exposure is performed in the second process unit. The interlayer robot is controlled to transfer the wafer from the second process module to the first process module, and the back washing unit in the first process unit is controlled to perform the back washing process on the wafer. After being backwashed, the wafer is temporarily stored in the interlayer module and then transferred to the interface module; the interface robot is controlled to feed the wafer into the lithography machine to perform the lithography process. After the photolithography process is performed, the control interface robot will send the wafer into the forward washing unit in the interface module to perform the forward washing process; The wafer is returned sequentially to the second process module and the first process module to continue the subsequent baking, developing and optical inspection processes.

2. The control method according to claim 1, characterized in that, Before the wafer is fed into the backwash unit, the following steps are also included: The interlayer robotic arm is controlled to deliver the wafer into the interlayer cooling unit for cooling, so that its temperature meets the temperature requirements for entering the first process module to perform the liquid processing process.

3. The control method according to claim 1, characterized in that, The backwash unit is located within the first process module, and the method includes: controlling a first robotic arm to feed the wafer into the backwash unit and then remove it.

4. The control method according to claim 1, characterized in that, When the coating and developing equipment includes at least two process paths, the portion of the process path in the first process module and the second process module is either in the forward or reverse direction of the X direction; the X direction is the direction from the first process module to the second process module. The method further includes: Based on the operating status of the process units in each process path, wafers are dynamically allocated to the lower-loaded path to balance the load across multiple process paths.

5. The control method according to claim 4, characterized in that, Both the interlayer module and the interface module are equipped with workstations. The method includes controlling a robotic arm to buffer the wafer through the station between multiple process steps, the station being shared by multiple process paths.

6. The control method according to claim 1, characterized in that, The first process module includes N first process layers, where N is a positive integer greater than 4. Each first process layer is equipped with a first robotic arm and M1 first process units, where M1 is a positive even number. The method further includes: Each first robotic arm in the first process layer is independently controlled to perform wafer transfer operations within its respective layer, enabling multiple first process layers to process coating, developing, or back washing processes of different wafers in parallel.

7. The control method according to claim 1, characterized in that, The second process module includes N second process layers, where N is a positive integer greater than 4. Each second process layer is equipped with a second robotic arm and M2 second process units, where M2 is a positive even number. The method further includes: The second robotic arm in each second process layer is independently controlled to perform wafer transfer operations within the layer, enabling multiple second process layers to process different wafer baking, edge exposure, or temporary storage processes in parallel.

8. A coating and developing apparatus, characterized in that, The system includes an interface module, a control module, a first process module, an interlayer module, and a second process module. The first process module contains a first robotic arm for transferring wafers between first process units within the module. The second process module contains a second robotic arm for transferring wafers between second process units within the module. The interlayer module contains an interlayer robotic arm for transferring wafers between the first and second process modules. The interface module contains an interface robotic arm for transferring wafers within the interface module and between the interface module and the lithography machine. The interface module is located on the side of the second process module opposite to the interlayer module and directly interfaces with the lithography machine to complete pre- and post-lithography processing. The control module is electrically connected to the interface module, the first process module, the interlayer module, and the robotic arm and process unit in the second process module. The control module is used to control the first robotic arm to transfer the wafer to the first process unit to perform at least one liquid processing process, namely coating and developing; to control the second robotic arm to transfer the wafer to the second process module, where at least one process, namely baking and edge exposure, is performed; to control the interlayer robotic arm to transfer the wafer from the second process module to the first process module, and to control the back washing unit in the first process unit to perform a back washing process on the wafer; after the back washing, the wafer is temporarily stored in the interlayer module and then transferred to the interface module; to control the interface robotic arm to feed the wafer into the lithography machine to perform the lithography process; after the lithography process, to control the interface robotic arm to feed the wafer into the forward washing unit in the interface module to perform the forward washing process; and to return the wafer sequentially to the second process module and the first process module to continue performing subsequent baking, developing, and optical inspection processes.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the executable computer program in the storage medium is executed by a processor, it can implement the method as described in any one of claims 1 to 7.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the method as described in any one of claims 1 to 7.

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