因读干扰而进行的数据挪移方法、装置和快闪存储器
By checking the word lines of the flash memory and dynamically adjusting the read count threshold, the problem of data loss caused by read interference was solved, improving the lifespan and read performance of the memory, especially enhancing the durability of the memory when distinguishing between hot and cold data.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MAXIO TECHNOLOGY (HANGZHOU) CO LTD
- Filing Date
- 2024-07-23
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies for addressing read interference issues rely on fixed thresholds to determine data movement. This leads to frequent writes and erases of storage pages that are resistant to read interference, resulting in low utilization. Meanwhile, storage pages that are less resistant to read interference may become unreliable before reaching the threshold, leading to data loss.
By performing word line checks on the flash memory blocks, abnormal word lines are identified and data is shifted within the range of adjacent normal word lines. The data shifting strategy is dynamically adjusted by combining the number of reads and temperature to adjust the read count threshold.
It reduces the overhead and lifespan loss of data migration, increases the lifespan of flash memory, and distinguishes between hot and cold data during data migration, thereby improving the read performance and durability of the memory.
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Figure CN121411679B_ABST
Abstract
Citation Information
Patent Citations
Control method of flash memory controller, flash memory controller and electronic device
CN116431060A
Read disturb mitigation in non-volatile memory
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