Plating method and plating apparatus

Abstract

The present application provides a kind of technology capable of realizing the uniformization of film thickness. Plating method includes: supply processing (S5), to the plating tank configured with anode and intermediate component, substrate is supplied to the site not in contact with intermediate component, the substrate has the pattern formation area formed with multiple patterns, the profile shape of pattern formation area is non-circular, when looking up, intermediate component has the hole formation area formed with multiple holes capable of being supplied with plating solution and the electric field shielding area arranged around hole formation area, the profile shape of hole formation area corresponds with the profile shape of pattern formation area;Alignment processing (S10), the position of substrate is adjusted to make the profile shape of pattern formation area and the profile shape of hole formation area become the state of spatial alignment;And first power-on processing (S20), one side makes substrate swing rotation movement one side to anode and substrate power-on.

Description

Technical Field

[0001] This invention relates to a plating method and a plating apparatus. Background Technology

[0002] Conventionally, plating apparatuses capable of performing plating processes on substrates are known (for example, see Patent Document 1). Specifically, in the plating apparatus illustrated in Patent Document 1, an anode is disposed inside a plating tank containing a plating solution, a substrate serving as a cathode is disposed above the anode, an ion resistive element is disposed between the anode and the substrate, and an electric field shielding member is disposed between the ion resistive element and the substrate.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2022-59561

[0004] However, sometimes the substrates used for plating processes are substrates whose patterned areas are not circular in shape. For substrates with such patterned areas, plating methods that can achieve uniformity in the thickness (film thickness) of the plating film formed on the substrate have not yet been fully developed. Summary of the Invention

[0005] The present invention was made in view of the above circumstances, and one of its objectives is to provide a technique that can achieve uniform film thickness.

[0006] (Form 1)

[0007] To achieve the above objectives, one aspect of the plating method according to the present invention includes: a supply process, supplying a substrate to a plating tank having an anode and an intermediate component, the intermediate component being disposed between the anode and the substrate supplied to the plating tank, the substrate being supplied to a portion not in contact with the intermediate component, the substrate having a pattern forming region having a plurality of patterns, the outline shape of the pattern forming region being non-circular, and, in plan view, the intermediate component having a hole forming region having a plurality of holes through which plating solution can pass and an electric field shielding region disposed around the hole forming region, the hole forming region being... The outline shape corresponds to the outline shape of the pattern forming area; alignment process, adjusting the position of the substrate so that the outline shape of the pattern forming area and the outline shape of the hole forming area are spatially aligned; and first power-on process, while the substrate is oscillating and rotating, power is applied to the anode and the substrate, and during the oscillating and rotating motion, the substrate rotates at least once in a first rotation direction by a first angle and in a second rotation direction opposite to the first rotation direction by a second angle, with the alignment state of the outline shape of the pattern forming area and the outline shape of the hole forming area as the center.

[0008] (Form 2)

[0009] Based on the above-mentioned form 1, the first angle can also be 45° or less, and the second angle can also be 45° or less.

[0010] (Form 3)

[0011] Based on the above-described form 1 or 2, the outline shape of the pattern forming area may also be configured such that, when the substrate is rotated by a rotational symmetry angle of less than 360°, it appears to have the same shape before and after rotation.

[0012] (Form 4)

[0013] Based on the above-described form 3, the above-described plating method may also include: a rotation process, in which, after the first power-on process, the substrate is rotated by the rotational symmetry angle while the power supply to the anode and the substrate is stopped; and a second power-on process, in which, after the rotation process, the substrate is energized while the anode and the substrate are subjected to the oscillating rotational motion.

[0014] (Form 5)

[0015] Based on the above-described form 4, it is also possible to further execute a series of processes that include the above-described rotation process and the above-described second power-on process at least once after the execution of the above-described second power-on process.

[0016] (Form 6)

[0017] Based on form 5 above, the above series of processes can also be executed multiple times.

[0018] (Form 7)

[0019] Based on the above-described form 6, it is also possible that in the above-described rotation process that is performed multiple times, the rotation direction of the substrate in the rotation process performed at any time is opposite to the rotation direction of the substrate in the next rotation process.

[0020] (Form 8)

[0021] Based on the above-described form 6, it is also possible that in the above-described rotation process that is performed multiple times, the rotation direction of the substrate in the rotation process performed at any time is the same as the rotation direction of the substrate in the next rotation process.

[0022] (Form 9)

[0023] Based on any of the above-described forms 4 to 8, the rotational speed of the substrate in the above-described swinging rotational motion may also be the same as the rotational speed of the substrate in the above-described rotational processing.

[0024] (Form 10)

[0025] Based on any of the above-described forms 4 to 8, the rotational speed of the substrate in the above-described swinging and rotating motion may be a different value from the rotational speed of the substrate in the above-described rotational processing.

[0026] (Form 11)

[0027] Based on the above-described form 10, the rotational speed of the substrate in the above-described swinging rotational motion may also be slower than the rotational speed of the substrate in the above-described rotational processing.

[0028] (Form 12)

[0029] Based on any of the above-described forms 1 to 11, the intermediate component may also have an ion resistive body, which has the above-described hole forming region and the above-described electric field shielding region.

[0030] (Form 13)

[0031] Based on any of the above-described forms 1 to 11, the intermediate component may also include: an ion resistive element having the aforementioned plurality of holes; and an electric field shielding component disposed above the ion resistive element and having an opening, wherein the electric field shielding region is formed by the region surrounding the opening of the electric field shielding component, the hole forming region is formed by the region of the ion resistive element having the aforementioned plurality of holes located inside the opening of the electric field shielding component when viewed from above, and the outline shape of the hole forming region is formed by the outline of the opening of the electric field shielding component.

[0032] (Form 14)

[0033] To achieve the above objectives, one embodiment of the plating apparatus of the present invention includes a control module configured to perform the supply process, the alignment process, and the first power-on process described in any one of the embodiments 1 to 13.

[0034] Based on the above morphology, uniform film thickness can be achieved. Attached Figure Description

[0035] Figure 1 This is a perspective view showing the overall structure of the plating apparatus involved in the embodiment.

[0036] Figure 2This is a plan view showing the overall structure of the plating apparatus involved in the embodiment.

[0037] Figure 3 This is a schematic diagram showing the structure of the plating module involved in the implementation method.

[0038] Figure 4 This is a schematic diagram illustrating the state in which the substrate involved in the embodiment is immersed in the plating solution.

[0039] Figure 5 This is a schematic plan view of the substrate involved in the implementation method.

[0040] Figure 6 This is a schematic plan view of the intermediate components involved in the implementation method.

[0041] Figure 7 This is an example of a flowchart of the plating method involved in the implementation.

[0042] Figure 8 This is an example of a timing diagram of the plating method involved in the implementation.

[0043] Figure 9 This is a schematic diagram illustrating the alignment of the outline shape of the pattern forming area of ​​the substrate with the outline shape of the hole forming area of ​​the intermediate component in the embodiment.

[0044] Figure 10 This is a schematic diagram illustrating a case where the substrate involved in the embodiment undergoes a swinging and rotating motion.

[0045] Figure 11 This is a schematic diagram used to illustrate the effects of the swinging and rotating motion involved in the implementation method.

[0046] Figure 12 This is a schematic cross-sectional view of the intermediate component involved in Variation Example 1.

[0047] Figure 13 This is a schematic plan view of the electric field shielding component involved in Modification Example 1.

[0048] Figure 14 This is a schematic diagram illustrating an example of a structure capable of changing the position of an electric field shielding component, as described in Modification 1.

[0049] Figure 15 This is an example of a timing diagram when the substrate rotates in the same direction during the rotation process involved in the embodiment.

[0050] Figure 16 This is an example of a timing diagram where the rotational speed of the substrate in the swinging rotational motion described in the embodiment is different from the rotational speed of the substrate in the rotational process.

[0051] Figure 17 This is an example of a timing diagram of the plating method involved in Variation Example 2.

[0052] Figure 18 This is a schematic plan view of the intermediate component involved in the comparative example.

[0053] Figure 19 It is a schematic plan view used to illustrate the film thickness distribution of a substrate.

[0054] Figure 20 (A) is a schematic cross-sectional view of the surface portion of the patterned area of ​​the substrate, magnified. Figure 20 (B) is a schematic cross-sectional view illustrating a case where a coating film is formed in the pattern forming area.

[0055] Figure 21 This is a schematic plan view used to illustrate other examples of the substrate. Detailed Implementation

[0056] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the drawings are schematic illustrations to facilitate understanding of the features of the constituent elements, and the dimensions and ratios of each constituent element may not be identical to the actual dimensions. Additionally, in some of the drawings, orthogonal X-Y-Z coordinates are shown for reference. In this orthogonal coordinate system, the Z direction corresponds to upward, and the −Z direction corresponds to downward (the direction of gravity).

[0057] Figure 1 This is a perspective view showing the overall structure of the plating apparatus 1000 of this embodiment. Figure 2 This is a plan view (specifically a top view) showing the overall structure of the plating apparatus 1000 of this embodiment. Figure 1 and Figure 2 As shown, the plating apparatus 1000 includes: a loading port 100, a handling robot 110, an alignment device 120, a pre-wetting module 200, a pre-immersion module 300, a plating module 400, a cleaning module 500, a rotary dryer 600, a handling device 700, and a control module 800.

[0058] Loading ports 100 are modules used to move substrates contained in FOUP boxes (not shown) into the plating apparatus 1000 and move the substrates out of the plating apparatus 1000 into the box. In this embodiment, four loading ports 100 are arranged horizontally, but the number and arrangement of loading ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates, configured to exchange substrates between the loading ports 100, the alignment device 120, the pre-wetting module 200, and the rotary dryer 600. When exchanging substrates between the transport robot 110 and the transport device 700, the transfer of substrates can be performed via a temporary placement table (not shown).

[0059] Aligner 120 is a module used to align the orientation plane, notch, and other positions of the substrate to a predetermined direction. In this embodiment, two alignment devices 120 are arranged in the horizontal direction, but the number and arrangement of alignment devices 120 are arbitrary. Pre-wetting module 200 wets the substrate surface to be plated before plating with a treatment liquid such as pure water or degassed water, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. Pre-wetting module 200 is configured to perform a pre-wetting treatment that easily supplies plating liquid into the pattern by replacing the treatment liquid inside the pattern with plating liquid during plating. In this embodiment, two pre-wetting modules 200 are arranged in the vertical direction, but the number and arrangement of pre-wetting modules 200 are arbitrary.

[0060] The pre-impregnation module 300 is configured to perform a pre-impregnation treatment that cleans or activates the substrate surface by etching away, for example, the oxide film with high resistance present on the surface of the seed layer formed on the substrate to be plated before plating, using a treatment solution such as sulfuric acid or hydrochloric acid. In this embodiment, two pre-impregnation modules 300 are arranged vertically, but the number and arrangement of the pre-impregnation modules 300 are arbitrary. The plating module 400 performs the plating treatment on the substrate. In this embodiment, there are two units with 12 plating modules 400 arranged, three vertically and four horizontally, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0061] The cleaning module 500 is configured to clean the substrate to remove residual plating solution or the like from the substrate after plating. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of the cleaning modules 500 are arbitrary. The rotary dryer 600 is a module used to dry the cleaned substrate by rotating it at high speed. In this embodiment, two rotary dryers 600 are arranged vertically, but the number and arrangement of the rotary dryers 600 are arbitrary. The conveying device 700 is a device used to convey the substrate between multiple modules within the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000, and can be, for example, a general-purpose computer or a dedicated computer with an input / output interface for the operator.

[0062] An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, a substrate already housed in a cassette is loaded into the loading port 100. Next, a transport robot 110 removes the substrate from the cassette in the loading port 100 and transports it to the aligner 120. The aligner 120 aligns the orientation planes, notches, and other positions of the substrate to a predetermined direction. The transport robot 110 then delivers the substrate, which has been aligned by the aligner 120, to the pre-wetting module 200.

[0063] The pre-humidification module 200 performs a pre-humidification treatment on the substrate. The transport device 700 transports the pre-humidified substrate to the pre-impregnation module 300. The pre-impregnation module 300 performs a pre-impregnation treatment on the substrate. The transport device 700 transports the pre-impregnation treated substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0064] The transport device 700 transports the plated substrate to the cleaning module 500. The cleaning module 500 cleans the substrate. The transport device 700 then transports the cleaned substrate to the rotary dryer 600. The rotary dryer 600 dries the substrate. The transport robot 110 receives the substrate from the rotary dryer 600 and transports the dried substrate to a cassette in the loading port 100. Finally, the cassette containing the substrate is removed from the loading port 100.

[0065] In addition, Figure 1 , Figure 2 The structure of the plating apparatus 1000 described herein is merely an example, and the structure of the plating apparatus 1000 is not limited to this. Figure 1 , Figure 2 The structure.

[0066] Next, the plating module 400 will be described. Furthermore, since the plating apparatus 1000 of this embodiment has multiple plating modules 400 with the same structure, only one plating module 400 will be described.

[0067] Figure 3 This is a schematic diagram showing the structure of the plating module 400 in the plating apparatus 1000 according to this embodiment. Specifically, Figure 3 The schematic diagram illustrates the plating module 400 before the substrate Wf is immersed in the plating solution Ps. Figure 4 This is a schematic diagram showing the state of the substrate Wf immersed in the plating solution Ps.

[0068] Figure 3 and Figure 4 The plating apparatus 1000 shown is, as an example, a type of plating apparatus (so-called cup-type plating apparatus) in which the substrate Wf is immersed in plating liquid Ps with the surface direction of the substrate Wf in a horizontal position.

[0069] Figure 3 and Figure 4 The plating module 400 of the illustrated plating apparatus 1000 includes a plating tank 10, an overflow tank 20, and a substrate holder 30. Additionally, as... Figure 3 As illustrated, the plating module 400 of this embodiment includes a rotating mechanism 40, a tilting mechanism 45, and a lifting mechanism 50.

[0070] The plating tank 10 according to this embodiment is a bottomed container with an opening at the top. Specifically, the plating tank 10 has a bottom wall 10a and an outer peripheral wall 10b extending upward from the outer periphery of the bottom wall 10a, the upper part of which is open. Furthermore, the shape of the outer peripheral wall 10b of the plating tank 10 is not particularly limited, but as an example, the outer peripheral wall 10b according to this embodiment has a cylindrical shape. Plating solution Ps is stored inside the plating tank 10.

[0071] As the plating solution Ps, any solution containing ions of the metal element constituting the plating film is acceptable, and there are no particular limitations on its specific examples. In this embodiment, copper plating is used as an example of the plating process, and copper sulfate solution is used as an example of the plating solution Ps. Furthermore, the plating solution Ps may also contain specified additives.

[0072] An anode 11 is disposed inside the plating tank 10. The specific type of anode 11 is not particularly limited; it can be either an insoluble anode or a dissolved anode. In this embodiment, an insoluble anode is used as an example of anode 11. The specific type of this insoluble anode is not particularly limited; platinum, iridium oxide, etc., can be used.

[0073] Furthermore, during the plating process, inside the plating tank 10, a substrate Wf serving as a cathode is disposed above the anode 11 (see reference). Figure 4 ).

[0074] like Figure 4 As illustrated, the anode 11 and the substrate Wf are electrically connected to the power supply device 18. This power supply device 18 is controlled by the control module 800 (described later) to start and stop power supply to the anode 11 and the substrate Wf (i.e., to start and stop power supply). Furthermore, the specific structure of the power supply device 18 is not particularly limited; for example, it may include a power source and a switch for starting and stopping power supply from the power source.

[0075] Furthermore, during the plating process, an intermediate component 60 is disposed between the anode 11 and the substrate Wf inside the plating tank 10. For example... Figure 3 , Figure 4 As illustrated, the intermediate component 60 in this embodiment is disposed in the plating tank 10 in a non-contact state, without contacting the anode 11 or the substrate Wf. Furthermore, during the plating process, it is preferable that the center position of the substrate Wf in the substrate holder 30 is aligned with the center position of the intermediate component 60 disposed in the plating tank 10. Additionally, during the plating process, it is preferable that the substrate Wf and the intermediate component 60 are parallel. Details regarding the structure of the intermediate component 60 will be described later.

[0076] The specific value of the distance between the intermediate component 60 and the substrate Wf during the plating process is not particularly limited. For example, any value within 50 mm, specifically any value within 40 mm, specifically any value within 30 mm, or specifically any value within 15 mm can be used. Furthermore, when the blade 70 is arranged between the intermediate component 60 and the substrate Wf, in order to prevent the blade 70 from contacting the intermediate component 60 and the substrate Wf, the distance between the intermediate component 60 and the substrate Wf is preferably set.

[0077] like Figure 3 , Figure 4 As illustrated, a membrane 16 may also be disposed inside the plating tank 10, positioned above the anode 11 and below the intermediate component 60. In this case, the interior of the plating tank 10 is divided by the membrane 16 into an anode chamber 17a below the membrane 16 and a cathode chamber 17b above the membrane 16. The anode 11 is disposed in the anode chamber 17a, and the intermediate component 60 and the substrate Wf are disposed in the cathode chamber 17b. The membrane 16 is configured to allow metal ion-containing ions contained in the plating solution Ps to pass through the membrane 16, while inhibiting the passage of non-ionic plating additives contained in the plating solution Ps through the membrane 16. An ion exchange membrane, for example, can be used as such a membrane 16.

[0078] The plating tank 10 is provided with a supply port for supplying plating solution Ps to the plating tank 10. Specifically, the outer peripheral wall 10b of the plating tank 10 in this embodiment is provided with a first supply port 13a and a second supply port 13b, wherein the first supply port 13a is used to supply plating solution Ps to the anode chamber 17a, and the second supply port 13b is used to supply plating solution Ps to the cathode chamber 17b.

[0079] Additionally, a first outlet 14a is provided in the plating tank 10, which is used to discharge the plating solution Ps in the anode chamber 17a to the outside of the plating tank 10. The plating solution Ps discharged from the first outlet 14a is pumped (not shown) and supplied again to the anode chamber 17a from the first supply port 13a.

[0080] The overflow tank 20 is a bottomed container disposed outside the plating tank 10. The overflow tank 20 is provided to temporarily store plating liquid Ps that exceeds the upper end of the outer peripheral wall 10b of the plating tank 10 (i.e., plating liquid Ps overflowing from the plating tank 10). After being discharged from the second outlet 14b, the plating liquid Ps stored in the overflow tank 20 is pressurized by a pump (not shown) and supplied again from the second supply port 13b to the cathode chamber 17b.

[0081] The substrate holder 30 holds the substrate Wf, which serves as the cathode, with the plated surface Wfa of the substrate Wf facing the anode 11. In this embodiment, specifically, the plated surface Wfa of the substrate Wf is provided on the downward-facing side (lower surface) of the substrate Wf.

[0082] The substrate holder 30 is connected to the rotation mechanism 40. The rotation mechanism 40 is a mechanism for rotating the substrate holder 30. In this embodiment, the rotation mechanism 40 is indirectly connected to the substrate Wf via the substrate holder 30, and is configured to rotate the substrate Wf by rotating the substrate holder 30. As such a rotation mechanism 40, a known rotation mechanism equipped with a rotary motor or the like can be used, for example. The tilting mechanism 45 is a mechanism for tilting the rotation mechanism 40 and the substrate holder 30.

[0083] The lifting mechanism 50 is configured to be supported by a support shaft 51 extending in the vertical direction and to move vertically along the support shaft 51. The lifting mechanism 50 is configured to lift the substrate holder 30, the rotation mechanism 40, and the tilting mechanism 45 vertically. In this embodiment, the lifting mechanism 50 is indirectly connected to the substrate Wf via the substrate holder 30, the rotation mechanism 40, and the tilting mechanism 45, and is configured to lift the substrate Wf by lifting these components. As such a lifting mechanism 50, a known lifting mechanism equipped with a direct-acting actuator or the like can be used.

[0084] During the plating process on substrate Wf, the lifting mechanism 50 lowers the substrate holder 30 to immerse substrate Wf in plating solution Ps (resulting in...). Figure 4 (state).

[0085] Alternatively, a blade 70 may be disposed inside the plating tank 10 in a region above the anode 11 and below the substrate holder 30. Specifically, in this embodiment, the blade 70 is disposed between the intermediate member 60 disposed above the anode 11 and the substrate holder 30. The blade 70 is configured as a "stirring member" driven by a drive device (not shown) to stir the plating solution Ps. As an example, in this embodiment, the blade 70 is driven alternately in the Y direction and the −Y direction in a direction parallel to the anode 11 (or substrate Wf).

[0086] Furthermore, the blade 70 only needs to be disposed inside the plating tank 10 at least when stirring the plating solution Ps, and does not need to be disposed inside the plating tank 10 at all times. For example, when the driving of the blade 70 is stopped and the plating solution Ps is not stirred by the blade 70, the blade 70 can also be configured to be disposed outside the plating tank 10.

[0087] Reference Figure 3 The plating module 400 includes a sensor class 90 for detecting the state of the plating module 400. For example, this sensor class 90 may include an angle sensor for detecting the rotational position (rotation angle) of the substrate Wf, and a rotational speed sensor for detecting the rotational speed of the substrate Wf. Additionally, the sensor class 90 may include a voltage sensor for detecting the voltage between the anode 11 and the substrate Wf, and a current sensor for detecting the current between the anode 11 and the substrate Wf. Furthermore, the sensor class 90 may include a film thickness sensor for detecting the film thickness of the plating film formed on the substrate Wf. The data detected by these sensors is transmitted to the control module 800.

[0088] The control module 800 in this embodiment is composed of a microcomputer including a processor 801 and a storage device 802 as a non-transitory storage medium. The control module 800 controls the operation of the plating module 400 by the processor 801 operating according to instructions of a program stored in the storage device 802.

[0089] Figure 5 This is a schematic plan view of the substrate Wf involved in this embodiment. Specifically, Figure 5 The diagram schematically illustrates the situation where the plated surface Wfa of the substrate Wf can be visually confirmed from above. A notch Wfc can also be provided on the outer periphery of the substrate Wf as a positioning mark. Alternatively, a notch Wfc can be provided on the outer periphery of the substrate Wf instead of a notch Wfc.

[0090] The substrate Wf involved in this embodiment has a patterned area, namely a patterned area Wfb. Furthermore, in this embodiment, a non-patterned area Wfe is provided around the patterned area Wfb of the substrate Wf.

[0091] Figure 20 (A) is a schematic cross-sectional view enlarged from the surface portion of the patterned region Wfb of the substrate Wf. Additionally, Figure 20 (B) is a schematic cross-sectional view illustrating a case where a coating film (Wfd) is formed in the pattern forming area Wfb. Figure 20 As illustrated in (A), a photoresist layer Wph composed of photoresist is provided in the pattern forming region Wfb of the substrate Wf.

[0092] A plurality of patterns Wpt are formed in the photoresist layer Wph. Each of the plurality of patterns Wpt is formed by a recess or a protrusion formed in the photoresist layer Wph. Alternatively, the photoresist layer Wph may not be formed in the non-patterned area Wfe of the substrate Wf, and it is assumed that even when the photoresist layer Wph is formed, no patterns Wpt are formed. The patterned area Wfb of the substrate Wf is used as a semiconductor chip, for example, after the plating process.

[0093] Reference Figure 5 When viewed from above, the outline shape of the pattern forming region Wfb according to this embodiment is non-circular. That is, the distance between the outline (outer edge) of the pattern forming region Wfb according to this embodiment and the center of the substrate Wf is not constant. Furthermore, the outline shape of the pattern forming region Wfb according to this embodiment is configured such that when the substrate Wf is rotated by a "rotational symmetry angle (which has a value of less than 360°)," it appears to have the same shape before and after the rotation.

[0094] For a specific example, the patterning region Wfb of the substrate Wf involved in this embodiment has an intersecting shape formed by two rectangles. When the substrate Wf is moved from... Figure 5 If the state is rotated at least 180° clockwise, the outline shape of the pattern forming area Wfb will appear to be the same before and after the rotation.

[0095] exist Figure 5 In the illustrated substrate Wf, 180° can be used as an example of a rotational symmetry angle. Therefore, in this embodiment, 180° will be used as the rotational symmetry angle in the following description. Furthermore, when the patterning region Wfb is intersecting, 90° can also be used as the rotational symmetry angle if the two intersecting rectangles have the same shape.

[0096] Of course, the 180° value mentioned above is just one example of a rotational symmetry angle, and the rotational symmetry angle is not limited to this. For another example, if the outline shape of the pattern formation area Wfb on the substrate Wf is square, then 90° can be used as the rotational symmetry angle. Figure 21 (An example of the substrate Wf is shown below). For example, if the outline shape of the patterning region Wfb is an equilateral triangle, 120° can also be used as the rotational symmetry angle. In this way, the rotational symmetry angle can take any value less than 360° depending on the outline shape of the patterning region Wfb.

[0097] Figure 6 This is a schematic plan view of the intermediate component 60 involved in this embodiment. (Refer to...) Figure 3 , Figure 4 , Figure 6 When viewed from above, the intermediate component 60 of this embodiment has a hole-forming region 61 with a plurality of holes 12a through which the plating solution Ps can pass, and an electric field shielding region 62 without holes 12a. In this embodiment, the electric field shielding region 62 is provided around the hole-forming region 61.

[0098] Furthermore, when viewed from above, the outline shape of the hole forming region 61 of the intermediate component 60 in this embodiment (which is the shape of the boundary portion 65 between the hole forming region 61 and the electric field shielding region 62) has a shape corresponding to the outline shape of the pattern forming region Wfb of the substrate Wf.

[0099] In this embodiment, "two shapes correspond" can be interpreted as two shapes having the same characteristics. Specifically, if two shapes appear to be the same when visually confirmed with the naked eye, they can be determined to correspond. Furthermore, in Figure 5 and Figure 6 In the illustrated embodiment, the outline shape of the hole forming region 61 and the outline shape of the pattern forming region Wfb are the same.

[0100] Preferably, the area of ​​the aperture forming region 61 and the area of ​​the pattern forming region Wfb are the same value, but they can also be different within a range of up to 10%. In the case where the areas of the two are different, for example, if the area of ​​the aperture forming region 61 is larger than the area of ​​the pattern forming region Wfb, then the point is preferably located where a portion of the pattern forming region Wfb can be effectively suppressed from being hidden in the shadow of the electric field shielding region 62.

[0101] As an example, the intermediate component 60 in this embodiment is composed of an ion resistor 12 having a hole forming region 61 and an electric field shielding region 62. The ion resistor 12 is a component that acts as a resistor to ions moving inside the plating solution Ps during the plating process. The material of the intermediate component 60 (i.e., the ion resistor 12) is not particularly limited, and resins such as polyetheretherketone (PEEK) and polyvinyl chloride (PVC) can be used.

[0102] Next, the plating method (plating process) involved in this embodiment will be described. Figure 7 This is an example of a flowchart of the plating method involved in this embodiment. Figure 8 This is an example of a timing diagram of the plating method involved in this embodiment. Specifically, in Figure 8 The lower layer illustrates the timing diagram of the current (A) flowing between the anode 11 and the substrate Wf, while the upper layer illustrates the timing diagram of the rotation angle (°) of the substrate Wf.

[0103] Reference Figure 7 The plating method (plating process) involved in this embodiment includes a supply process (step S5), an alignment process (step S10), a first power-on process (step S20), a rotation process (step S30), and a second power-on process (step S40). Furthermore, Figure 7 Each step can also be executed through the control processing of the control module 800.

[0104] First, in the supply process involved in step S5, the substrate Wf is supplied to the plating tank 10. As an example, in this embodiment, the substrate Wf is supplied to a portion of the plating tank 10 that is above the intermediate member 60 and does not contact the intermediate member 60. Specifically, the control module 800 controls, for example, the lifting mechanism 50 to lower the substrate holder 30 holding the substrate Wf, thereby positioning the substrate Wf in the plating tank 10 at a portion that is above the intermediate member 60 and does not contact the intermediate member 60.

[0105] Next, in the alignment process involved in step S10, the position (rotational position) of the substrate Wf is adjusted so that the outline shape of the pattern forming region Wfb of the substrate Wf and the outline shape of the hole forming region 61 of the intermediate component 60 are spatially aligned. For reference, Figure 9 The diagram illustrates the alignment of the outline shape of the pattern forming region Wfb with the outline shape of the hole forming region 61.

[0106] Furthermore, the spatial alignment of the outline shape of the pattern forming region Wfb with the outline shape of the hole forming region 61 of the intermediate component 60 means that the pattern forming region Wfb and the hole forming region 61 do not contact each other, but when the outline shape of the pattern forming region Wfb is projected downwards, the projected shape is substantially consistent with the outline shape of the hole forming region 61.

[0107] Specifically, in step S10, the control module 800 of this embodiment controls the rotation mechanism 40 to rotate the substrate holder 30, thereby rotating the substrate Wf to align the outline shape of the pattern forming region Wfb of the substrate Wf with the outline shape of the hole forming region 61.

[0108] In the following description, the rotational position of the substrate Wf, in which the outline shape of the pattern forming region Wfb is aligned with the outline shape of the hole forming region 61, is sometimes referred to as the “reference rotational position” of the substrate Wf.

[0109] Next, the first power-on process involved in step S20 is performed. In this first power-on process, the substrate Wf is subjected to a energizing force on the anode 11 and the substrate Wf for a predetermined time while the substrate Wf is subjected to a "swinging rotational motion". This first power-on process is equivalent to Figure 8 The time interval from "time 0 (sec) to time t1 (sec)". For reference, Figure 10 This diagram illustrates a scenario where the substrate Wf undergoes a swinging and rotating motion.

[0110] Here, "oscillating rotational motion" refers to a rotational motion centered on the alignment of the outline shape of the pattern forming region Wfb with the outline shape of the hole forming region 61 of the intermediate component 60 (i.e., centered on the reference rotational position), in which the substrate Wf is rotated at least once in a first rotational direction (Rt1) by a first angle (α1) and in a second rotational direction (Rt2) opposite to the first rotational direction by a second angle (α2) (refer to...). Figure 10 ).

[0111] In addition, Figure 8 In the illustrated embodiment, the substrate Wf rotates multiple times in the first and second rotational directions during the oscillating rotational motion. Furthermore, in this embodiment, as an example, the first angle and the second angle are the same value. However, this structure is not limited to this configuration. For example, the first angle and the second angle may also be different values.

[0112] The specific values ​​of the upper limits of the first and second angles are not particularly limited. For example, angles below 45°, specifically below 30°, and more specifically below 10° can be used. According to this structure, the substrate Wf can perform oscillating rotational motion around the reference rotational position.

[0113] Furthermore, there are no specific restrictions on the lower limits of the first and second angles, as long as the angle is greater than 0°. For example, angles of 1° or more, specifically 3° or more, and more specifically 5° or more, can be used.

[0114] Furthermore, in step S20, the control module 800 only needs to control the rotation mechanism 40 to cause the substrate Wf to swing and rotate. Additionally, the control module 800 only needs to control the energizing device 18 to energize the anode 11 and the substrate Wf.

[0115] In addition, Figure 8 In this context, oscillating and rotating motion is represented by a triangular waveform, but it is not limited to this. For example, oscillating and rotating motion can also be represented by a sine wave waveform, etc.

[0116] By performing the first power-on process as described above, a coating film Wfd is formed in at least the patterned region Wfb of the coated surface Wfa of the substrate Wf (refer to...). Figure 20 (B)

[0117] Furthermore, the execution period of the first power-on process is not particularly limited; for example, a value selected from the range of several seconds to hundreds of seconds can be used. As an example, a value selected from the range of 5 seconds to 500 seconds can be used. Additionally, when the substrate Wf rotates multiple times during the oscillating rotational motion, the specific value of that number of rotations is not particularly limited; for example, a value selected from the range of several times to hundreds of times can be used. As an example, a value selected from the range of 2 times to 200 times can be used.

[0118] Next, execute Figure 7 The rotation process involved in step S30. In this rotation process, with the power supply to the anode 11 and the substrate Wf stopped, the substrate Wf is rotated by a "rotational symmetry angle (in this embodiment, 180° is used as an example)". This rotation process is equivalent to Figure 8 During the period from "time t1 to time t2".

[0119] Specifically, in step S30, the control module 800 of this embodiment controls the rotation mechanism 40 to rotate the substrate Wf by a rotational symmetry angle when the power supply to the anode 11 and the substrate Wf is stopped.

[0120] By stopping the power supply to the anode 11 and the substrate Wf during the rotation process, it is possible to suppress the formation of a coating film in the pattern formation region Wfb when the rotation position of the substrate Wf deviates significantly from the reference rotation position.

[0121] Next, execute Figure 7 The second power-on process involved in step S40. In this second power-on process, the anode 11 and the substrate Wf are energized for a predetermined time while the substrate Wf is oscillating and rotating (i.e., while the substrate Wf is oscillating and rotating). This second power-on process is equivalent to Figure 8 The "time period from time t2 to time t3". Furthermore, the specified time involved in step S40 can be the same value as the specified time involved in step S20, or it can be a different value.

[0122] Specifically, in step S40, the control module 800 of this embodiment controls the rotation mechanism 40 to cause the substrate Wf to swing and rotate. Additionally, the control module 800 controls the energizing device 18 to energize the anode 11 and the substrate Wf.

[0123] By performing the second power-on process, a coating film is further formed in at least the patterned area Wfb of the plated surface Wfa on the substrate Wf.

[0124] Furthermore, the execution period of the second power-on process is not particularly limited; for example, a value selected from the range of several seconds to hundreds of seconds can be used. As an example, a value selected from the range of 5 seconds to 500 seconds can be used. Additionally, if the substrate Wf rotates multiple times during the oscillating rotation motion of the second power-on process, the specific value of that number of rotations is not particularly limited; for example, a value selected from the range of several times to hundreds of times can be used. As an example, a value selected from the range of 2 times to 200 times can be used.

[0125] The plating method described in this embodiment can also, after the execution of the second power-on process described above, further perform at least one "series of processes" including a rotation process (step S30) and a second power-on process (step S40). Specifically, in Figure 8 In the diagram, a timing diagram illustrating this "series of processes" is shown after time t3.

[0126] Specifically, Figure 8 The time intervals t3 to t4 correspond to the second rotation process, and t4 to t5 correspond to the second energizing process. Furthermore, t5 to t6 correspond to the third rotation process, and t6 to t7 correspond to the second energizing process. That is, in... Figure 8In the timing diagram, two "series of processes" are executed after the first second power-on process.

[0127] Furthermore, the execution time of the first power-on process and the execution time of the second power-on process can be the same or different values. Additionally, the period of the oscillating rotational motion in the second power-on process (referred to as the "period (T1)") can be the same or different values ​​between multiple executions of the second power-on process. Furthermore, the "amplitude (Am) of the oscillating rotational motion" can be the same or different values ​​between multiple executions of the second power-on process. Moreover, the specific value of the period (T1) is not particularly limited; for example, a value in the range of several seconds to hundreds of seconds can be used.

[0128] certainly, Figure 8 The example described is just one example of a plating method. For instance, a series of processes may be performed only once, or it may be performed more than three times. Alternatively, a series of processes may not be performed at all.

[0129] Furthermore, the plating process using the above-described plating method can be performed until the thickness of the plating film formed on the substrate Wf reaches a predetermined target value. In this case, the above-described series of processes can be repeatedly performed until the film thickness reaches the target value.

[0130] In addition, such as Figure 8 As illustrated, in this embodiment, as an example, when multiple rotation processes are performed, the rotation direction of the substrate Wf in the rotation process performed at any time is opposite to the rotation direction of the substrate Wf in the subsequent rotation process.

[0131] That is, the rotation direction of substrate Wf during the first rotation process is opposite to the rotation direction of substrate Wf during the second rotation process. Similarly, the rotation direction of substrate Wf during the second rotation process is opposite to the rotation direction of substrate Wf during the third rotation process. In addition, in this case, substrate Wf can also rotate in the same direction during the "nth" rotation process when the value of "rotation angle × n of substrate Wf" reaches 360°.

[0132] However, the rotation direction of the substrate Wf in cases of multiple rotation processes is not limited to the structure described above. For example, as... Figure 15 As illustrated, in the case of performing multiple rotation processes, the rotation direction of the substrate Wf in any rotation process performed at any time can also be the same as the rotation direction of the substrate Wf in the next rotation process performed.

[0133] In addition, Figure 8In the illustrated embodiment, the rotational speed (° / sec) of the substrate Wf during the oscillating rotational motion is the same as the rotational speed of the substrate Wf during the rotational processing. However, this structure is not limited to this one.

[0134] For example, such as Figure 16 As illustrated, the rotational speed (° / sec) of the substrate Wf during the oscillating rotational motion can be different from the rotational speed of the substrate Wf during the rotational processing. Furthermore, in this case, as... Figure 16 As illustrated, for example, the rotational speed of substrate Wf in oscillating rotational motion can also be slower than the rotational speed of substrate Wf in rotational processing.

[0135] Next, the main effects of this implementation method will be explained. Figure 18 This is a schematic plan view of the intermediate component 6000 involved in the comparative example. Figure 19 It is a schematic plan view used to illustrate the film thickness distribution of substrate Wf.

[0136] Reference Figure 18 In the comparative example, the intermediate component 6000 is located at a point in the hole-forming region 61 where the outline shape is circular. Figure 6 The intermediate component 60 involved in this embodiment is different.

[0137] When using the intermediate component 6000 described in this comparative example, the outline shape of the hole forming region 61 of the intermediate component 6000 does not correspond to the outline shape of the pattern forming region Wfb of the substrate Wf. Therefore, depending on the shape of the pattern forming region Wfb of the substrate Wf, there is a concern that a portion of the pattern forming region Wfb may be hidden in the shadow of the electric field shielding region 62 of the intermediate component 6000. In this case, it is difficult to achieve uniformity in the film thickness of the coating film formed on the pattern forming region Wfb of the substrate Wf.

[0138] In contrast, according to this embodiment, an intermediate component 60 is used, the outline shape of the hole forming region 61 corresponding to the outline shape of the pattern forming region Wfb of the substrate Wf. Therefore, it is possible to prevent the pattern forming region Wfb of the substrate Wf from being hidden in the shadow of the electric field shielding region 62 of the intermediate component 60. As a result, it is possible to achieve uniformity in the film thickness of the coating film formed on the pattern forming region Wfb of the substrate Wf.

[0139] Furthermore, when using the intermediate component 6000 involved in the comparative example, the film thickness of the patterned region Wfb of the substrate Wf, particularly the outer edge portion, tends to be thicker than the film thickness of the region inside the outer edge of the patterned region Wfb. This results in... (referring to...) Figure 19Between point P1 and point P2, which is located at a radius smaller than P1, there is a trend of significant differences in film thickness. Specifically, there is a trend of the film thickness at point P1 being greater than that at point P2.

[0140] In contrast, according to this embodiment, as the intermediate component 60, an intermediate component whose outline shape of the hole forming region 61 corresponds to the outline shape of the pattern forming region Wfb of the substrate Wf is used, so the difference in film thickness between point P1 and point P2 can be reduced compared with the comparative example.

[0141] Furthermore, according to this embodiment, the substrate Wf performs a swinging and rotating motion during the first power-on process and the second power-on process, thus achieving the effects described below.

[0142] Figure 11 This is a schematic diagram used to illustrate the effects of oscillating and rotating motion. Specifically, Figure 11 The upper figure (No. 1) shows an example of the film thickness distribution when the anode 11 and the substrate Wf are energized during the first and second energizing processes, without the substrate Wf undergoing any oscillating or rotating motion (specifically, when the rotation of the substrate Wf has stopped). Furthermore, Figure 11 No. 1 shows along Figure 5 The film thickness distribution of the portion of the imaginary line L1 is illustrated. On the other hand, Figure 11 The lower layer (No2) shows an example of the film thickness distribution (the film thickness distribution along the imaginary line L1) when the substrate Wf is oscillating and rotating during the first and second power-on processes, and the anode 11 and the substrate Wf are energized.

[0143] according to Figure 11 As can be seen from No. 1, in the comparative example, the portion of the substrate Wf corresponding to the boundary portion 65 of the intermediate member 60 (specifically, the portion of the substrate Wf corresponding to the boundary portion 65 of the intermediate member 60) Figure 5 The film thickness in regions R1 and R2 tends to become particularly thick.

[0144] In contrast, during the first and second power-on processes, if the substrate Wf is oscillating and rotating, the position of the boundary portion 65 of the intermediate component 60 shifts laterally when viewed from above, while a plating process is performed on the substrate Wf. Thus, the electric field shielding effect achieved by utilizing the electric field shielding region 62 of the intermediate component 60, such as... Figure 11 As illustrated in No. 2, the film thickness in regions R1 and R2 can be kept low. As a result, the film thickness of the coated film in the patterned region Wfb formed on the substrate Wf can be effectively made uniform.

[0145] Furthermore, according to this embodiment, the rotation process is performed after the first power-on process, and then the second power-on process is performed, thus achieving the effects described below.

[0146] Specifically, consider the case where the center position is slightly offset between the substrate Wf held in the substrate holder 30 and the intermediate member 60, and the parallelism is slightly offset between the substrate Wf and the intermediate member 60. In such a case, if the second power-on process is performed without rotation after the first power-on process (i.e., if the power-on process is performed for a long time), there is a concern that the uniformity of the film thickness may be deteriorated due to the offset of the center position and the offset of the parallelism.

[0147] In contrast, according to this embodiment, since the substrate Wf can be rotated by a rotational symmetry angle during the rotation process and then plated during the second power-on process, the deterioration of film thickness uniformity caused by the offset of the center position and the offset of parallelism can be reduced. In this respect, according to this embodiment, film thickness uniformity can also be effectively achieved.

[0148] (Variation Example 1)

[0149] In the above embodiments, intermediate component 60 may also be used instead of intermediate component 60, as described below. Figure 12 This is a schematic cross-sectional view of the intermediate component 60A according to a variation of the embodiment 1. The intermediate component 60A according to this variation includes: an ion resistor 12 having a plurality of holes 12a; and an electric field shielding component 63 disposed above the ion resistor 12.

[0150] In this modified example, the outline shape of the region of the ion resistivity 12 where multiple holes 12a are formed may not correspond to the outline shape of the patterned region Wfb of the substrate Wf. Specifically, the outline shape of the region of the ion resistivity 12 where multiple holes 12a are formed in this modified example may also be circular when viewed from above.

[0151] Figure 13 This is a schematic plan view of the electric field shielding component 63 involved in this variation. (Refer to...) Figure 12 and Figure 13 In this modified example, the electric field shielding member 63 has an opening 66. In this case, the electric field shielding region 62 is formed by the region surrounding the opening 66 of the electric field shielding member 63.

[0152] Furthermore, the aforementioned hole-forming region 61 is composed of a region containing a plurality of holes 12a of ion resistivity 12 located inside the opening 66 of the electric field shielding member 63 when viewed from above (see reference). Figure 12As a result, the outline shape of the aforementioned hole-forming region 61 (the shape of the boundary portion 65) is formed by the outline shape of the opening 66 of the electric field shielding member 63 (see reference). Figure 12 , Figure 13 ).

[0153] Furthermore, in this modified example, the shape of the intermediate component 60A, which has the ion resistivity 12 and the electric field shielding component 6, is also consistent with the shape seen from the top side view. Figure 6 The intermediate component 60 shown is of the same shape.

[0154] Even when the plating apparatus 1000 is equipped with the intermediate component 60A involved in this modified example, it can still achieve the same effect as the above-described embodiment.

[0155] Furthermore, in this modified example, the ion resistivity 12 and the electric field shielding component 63 are in contact with each other, but the structure is not limited to this. Alternatively, the ion resistivity 12 and the electric field shielding component 63 may not be in contact with each other, and a space (a space for the plating solution Ps) may be formed between the ion resistivity 12 and the electric field shielding component 63.

[0156] Alternatively, this modified example can also be configured to change the relative position of the electric field shielding member 63 inside the plating tank 10 in the horizontal plane. Figure 14 This is a schematic diagram illustrating an example of a structure capable of changing the position of the electric field shielding component 63. For example... Figure 14 As illustrated, the electric field shielding component 63 can also be connected to the moving device 80 via the engaging component 81.

[0157] The engaging member 81 is configured to support the electric field shielding member 63 and connect the moving device 80 and the electric field shielding member 63. Such an engaging member 81 may, for example, be a cylindrical member (or multiple rod members) configured to pass through the gap between the substrate holder 30 and the plating tank 10. Furthermore, when the engaging member 81 is composed of a cylindrical member, at least one opening 82 may be provided in the engaging member 81 as needed for the plating solution to pass between the inner and outer sides of the engaging member 81.

[0158] The moving device 80 is configured, for example, to receive instructions from the control module 800 to move the engaging member 81 in any direction within the horizontal plane (the direction within the X-Y plane). As an example, the moving device 80 may also include: a cylinder direct-acting mechanism configured to move the engaging member 81 in the X and -X directions; and a cylinder direct-acting mechanism configured to move the engaging member 81 in the Y and -Y directions. For example, the control module 800 may also move the moving device 80 according to instructions from a user of the plating apparatus 1000.

[0159] Based on the above structure, even if the position of the electric field shielding member 63 deviates from the desired position by a predetermined distance (e.g., a few mm) in the horizontal plane, the moving device 80 can still move the electric field shielding member 63 to the desired position by a predetermined distance in the horizontal direction. Therefore, the alignment of the hole forming region 61 of the electric field shielding member 63 with the pattern forming region Wfb of the substrate Wf can be easily achieved.

[0160] The adjustment of the position of the electric field shielding member 63 using the moving device 80 can also be performed, for example, in the "alignment process" described above. That is, in this case, the alignment process may also include not only rotating the substrate Wf, but also aligning the hole forming region 61 of the electric field shielding member 63 with the pattern forming region Wfb of the substrate Wf by moving the electric field shielding member 63 in a direction within the horizontal plane.

[0161] (Variation Example 2)

[0162] In the above-described embodiments and variations 1, the plating method can also be configured to exclude the rotation process (step S30) and the second energizing process (step S40). That is, in this case, the plating method consists of a supply process (step S5), an alignment process (step S10), and a first energizing process (step S20). Figure 17 The following is an example of a timing diagram for the first power-on process in this case.

[0163] This variation is suitable for use when the outline shape of the pattern forming area Wfb of the substrate Wf does not have a rotational symmetry angle of less than 360°.

[0164] In this modified example, alignment processing and first energization processing are also performed. Therefore, when plating the substrate Wf, the substrate Wf can be oscillating and rotating around a state where the outline shape of the pattern forming region Wfb corresponds to the outline shape of the hole forming region 61, while energizing the anode 11 and the substrate Wf. As a result, uniformity of film thickness can be achieved.

[0165] The embodiments and variations of the present invention have been described in detail above. However, the present invention is not limited to these specific embodiments and variations, and various modifications / changes can be made within the scope of the spirit of the present invention.

[0166] Explanation of reference numerals in the attached figures

[0167] 10…plating tank; 11…anode; 12…ion resistive element; 12a…hole; 60…intermediate component; 61…hole forming area; 62…electric field shielding area; 63…electric field shielding component; 800…control module; 1000…plating device; Ps…plating solution; Wf…substrate; Wfb…pattern forming area; Wpt…pattern.

Claims

1. A plating method, characterized in that, include: The supply process involves supplying a substrate to a plating tank equipped with an anode and an intermediate component. The intermediate component is disposed between the anode and the substrate supplied to the plating tank. The substrate is supplied to a portion that does not contact the intermediate component. The substrate has a pattern forming region with multiple patterns, and the outline shape of the pattern forming region is non-circular. When viewed from above, the intermediate component has a hole forming region with multiple holes through which plating solution can pass, and an electric field shielding region disposed around the hole forming region. The outline shape of the hole forming region corresponds to the outline shape of the pattern forming region. Alignment processing involves adjusting the position of the substrate so that the outline shape of the pattern forming area and the outline shape of the hole forming area are spatially aligned. as well as In the first power-on process, while the substrate is oscillating and rotating, power is applied to the anode and the substrate. During the oscillating and rotating motion, the substrate is rotated at least once in a first rotation direction by a first angle and in a second rotation direction opposite to the first rotation direction by a second angle, with the outline shape of the pattern forming area aligned with the outline shape of the hole forming area as the center.

2. The plating method according to claim 1, characterized in that, The first angle is less than 45°, and the second angle is less than 45°.

3. The plating method according to claim 1, characterized in that, The outline shape of the pattern forming area is configured such that, when the substrate is rotated by a rotational symmetry angle of less than 360°, it appears to have the same shape before and after rotation.

4. The plating method according to claim 3, characterized in that, The plating method further includes: The rotation process involves rotating the substrate by the rotational symmetry angle after the first energizing process, with the energizing supply to the anode and the substrate stopped; and The second power-on process involves, after the rotation process, applying power to the anode and the substrate while causing the substrate to undergo the oscillating rotational motion.

5. The plating method according to claim 4, characterized in that, After the second power-on process is executed, a series of processes including the rotation process and the second power-on process are further executed at least once.

6. The plating method according to claim 5, characterized in that, The series of processes is executed multiple times.

7. The plating method according to claim 6, characterized in that, In the multiple rotation processes, the rotation direction of the substrate in any given rotation process is opposite to the rotation direction of the substrate in the next rotation process.

8. The plating method according to claim 6, characterized in that, In the multiple rotation processes, the rotation direction of the substrate in any given rotation process is the same as the rotation direction of the substrate in the next rotation process.

9. The plating method according to claim 4, characterized in that, The rotational speed of the substrate during the swinging rotational motion is the same as the rotational speed of the substrate during the rotational process.

10. The plating method according to claim 4, characterized in that, The rotational speed of the substrate during the swinging rotational motion is different from the rotational speed of the substrate during the rotational process.

11. The plating method according to claim 10, characterized in that, The rotational speed of the substrate in the swinging rotational motion is slower than the rotational speed of the substrate in the rotational process.

12. The plating method according to claim 1, characterized in that, The intermediate component has an ion resistive element having the hole-forming region and the electric field shielding region.

13. The plating method according to claim 1, characterized in that, The intermediate component has: An ion resistive element having the plurality of pores formed thereon; and An electric field shielding component is disposed above the ion resistive element and has an opening. The electric field shielding region is formed by the area surrounding the opening of the electric field shielding component. The aperture forming region is composed of the area of ​​the ion resistivity having the plurality of apertures located inside the opening of the electric field shielding component when viewed from above. The contour shape of the hole-forming region is formed by the contour of the opening of the electric field shielding component.

14. A plating apparatus, characterized in that, have: The control module is configured to perform the supply process, the alignment process, and the first power-on process in the plating method of claim 1.

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