A high-throughput laser direct writing system and method based on a deep ultraviolet light source

Abstract

The application discloses a high-flux laser direct writing system and method based on a deep ultraviolet light source, which sequentially arranges a deep ultraviolet excimer laser, a deep ultraviolet beam-expanding and light-uniformizing module, a deep ultraviolet compatible beam-splitting module, a multi-dot array generating module, a beam-combining module and a laser direct writing module according to the direction of light advancement; the deep ultraviolet excimer laser is used for generating deep ultraviolet laser; the deep ultraviolet beam-expanding and light-uniformizing module is used for expanding the deep ultraviolet laser and distributing the deep ultraviolet laser intensity in a flat top manner; the deep ultraviolet compatible beam-splitting module is used for splitting the expanded deep ultraviolet laser into multiple sub-beams; the multi-dot array generating module is used for converting the multiple sub-beams into corresponding multiple sub-multi-dot arrays; the beam-combining module is used for forming a multi-dot array according to a set arrangement mode; and the laser direct writing module is used for converging the multi-dot array on a displacement stage, so as to realize high-flux multi-dot array deep ultraviolet laser direct writing. The system can realize extremely high-flux super-narrow-size large-area micro-nano processing.

Description

Technical Field

[0001] This invention belongs to the field of deep ultraviolet laser direct writing technology, specifically relating to a high-throughput laser direct writing system and method based on a deep ultraviolet light source. Background Technology

[0002] Currently, the fabrication of large-area complex micro-nano structures has become a core technological requirement supporting the development of high-end fields such as semiconductor chips, high-frequency microwave devices, and precision optical components. For example, the interconnect structure of semiconductor chips needs to achieve nanoscale feature sizes with linewidths ≤100nm, and the processing area needs to cover wafers of 8 inches and above; the nanoscale metal gratings of high-frequency microwave devices require a period of ≤200nm, while ensuring structural consistency over a large area; precision optical gratings require a line density ≥5000 lines / mm, and need to achieve seamless fabrication at the millimeter level. These application scenarios all place dual core requirements on micro-nano fabrication technology: "nanoscale precision + large-area efficient manufacturing".

[0003] Deep ultraviolet (DUV) light sources, due to their high photon energy (≈6.4 eV) and low diffraction limit, have become one of the core light sources for high-precision micro-nano writing. Their short wavelength (diffraction limit ≤100 nm) makes them widely used in semiconductor chip lithography. To overcome the bottleneck of nanoscale precision processing, DUV light, with its unique optical and energy characteristics, has become a key candidate light source for high-precision micro-nano manufacturing: On the one hand, the wavelength of DUV light is only 1 / 4 to 1 / 5 of that of near-infrared lasers, and the diffraction limit can be as low as below 80 nm, theoretically enabling ultra-narrow feature size writing of 50-100 nm, naturally meeting the needs of nanoscale structure manufacturing; on the other hand, the photon energy of DUV light is as high as 6.4 eV, far exceeding the chemical bond breaking energy (2-5 eV) of most photoresists (such as positive photoresists and electron beam photoresists), eliminating the need for two-photon absorption effects and enabling efficient writing directly through single-photon excitation, significantly broadening the applicability range of high-precision lithography materials.

[0004] Patent application CN117130227A discloses a self-aligned deep ultraviolet lithography method applicable to the semiconductor technology field. The method includes: fabricating a multilayer structure, wherein the multilayer structure includes: a substrate; a second metal layer disposed on the substrate; a second photoresist layer disposed on a side of the second metal layer away from the substrate; a first metal layer disposed on a side of the second photoresist layer away from the substrate; a hard mask layer disposed on a side of the first metal layer away from the substrate; and a first photoresist layer disposed on a side of the hard mask layer away from the substrate; performing a first lithography process on the first photoresist layer to obtain a first photoresist pattern; forming a nanograting in the hard mask layer using the first photoresist pattern as a mask; and performing a second lithography process on the second photoresist layer using the nanograting to obtain a second photoresist pattern, wherein the linewidth of the second photoresist pattern is smaller than the linewidth of the first photoresist pattern. However, this method has low lithography efficiency.

[0005] "Multi-beam parallel" writing is one of the effective means to improve the throughput of micro and nano fabrication. A low-cost and relatively common method is to load a hologram onto a mask generator (such as a spatial light modulator (SLM) or a digital micromirror device (DMD)) and then form a multi-beam array through a subsequent optical system, or to use DMD+MLA (microlens array) to generate a multi-beam array. Both of these methods have high writing throughput and lower system cost than traditional multi-beam parallel writing.

[0006] However, existing deep ultraviolet laser direct writing technology has not yet been effectively combined with a high-efficiency processing framework of "multi-point parallel", making it difficult to balance accuracy and efficiency. Summary of the Invention

[0007] The purpose of this invention is to overcome the shortcomings of the prior art and propose a high-throughput multi-segment laser direct writing system based on a deep ultraviolet light source. This system can realize large-area micro-nano processing with extremely high throughput and ultra-narrow dimensions.

[0008] This invention provides a high-throughput laser direct writing system based on a deep ultraviolet light source, which consists of a deep ultraviolet excimer laser, a deep ultraviolet beam expanding and homogenizing module, a deep ultraviolet compatible beam splitting module, a multi-point array generation module, a beam combining module, and a laser direct writing module arranged sequentially according to the direction of light propagation. The deep ultraviolet excimer laser is used to generate deep ultraviolet laser light; The deep ultraviolet beam expanding and homogenizing module is used to expand the deep ultraviolet laser beam and distribute the deep ultraviolet laser intensity in a flat-top manner. The deep ultraviolet compatible beam splitter module is used to split the expanded deep ultraviolet laser into multiple sub-beams; The multi-point array generation module is used to convert multiple sub-beams into corresponding multiple sub-multi-point arrays. The beam combining module is used to form a multi-point matrix by arranging multiple sub-multi-point matrices according to a set arrangement. The laser direct writing module is used to converge multiple points onto the displacement stage to achieve high-throughput multi-point deep ultraviolet laser direct writing.

[0009] Preferably, the deep ultraviolet excimer laser is used to generate deep ultraviolet laser with a wavelength of 193nm or 266nm.

[0010] Preferably, the deep ultraviolet beam expanding and homogenizing module includes a wavefront pre-compensation unit, which is used to absorb distortion in order to homogenize the light intensity of the input beam, and the light intensity uniformity after homogenization is ≥95%.

[0011] Preferably, the deep ultraviolet compatible beam splitter module includes N-1 calcium fluoride polarizing beam splitters and sub-beam optical axis calibration units, where N≥2; The N-1 calcium fluoride polarizing beam splitter is used to split the expanded deep ultraviolet laser into multiple sub-beams. The sub-beam optical axis calibration unit is used to adjust the parallelism of multiple sub-beams.

[0012] Preferably, the multi-point array generation module includes multiple sub-multi-point array generation devices, wherein the sub-multi-point array generation devices are arranged sequentially according to the direction of light propagation, including a digital micromirror device, a lens group, a microlens array, and an image rotator. The incident surface of the digital micromirror device is coated with a special reflective film for deep ultraviolet light sources. The resolution of the digital micromirror device is not less than 2160×3840. The digital micromirror device is used to modulate the amplitude of the sub-beam. The lens group is used to image onto the front focal plane of the microlens array at a proportional scale; The microlens array is used to converge the modulated sub-beams into a focal array, and then the rotation angle of the array is adjusted by the image rotator to obtain a sub-multi-point array.

[0013] Preferably, the digital micromirror array comprises m×n micromirror array units, and the sub-beam passes through the m×n micromirror array units to obtain m×n unit light spots; Each micromirror array unit includes k×k micromirrors. By independently switching the k×k micromirrors on and off, the intensity and uniformity of the light spot in each unit can be independently controlled.

[0014] Preferably, the microlens array includes m×n microlenses for focusing the incident m×n unit light spots to generate an m×n focal array.

[0015] Preferably, the beam combining module includes multiple reflectors, each sub-multi-point array is incident on the corresponding reflector at a set distance, and the multiple sub-multi-point arrays are arranged in a set direction through the multiple reflectors to obtain a multi-point array.

[0016] Preferably, the laser direct writing module is arranged in sequence according to the light propagation direction, including a tube-wavefront correction module, an image rotation module, and a photolithography objective lens; The tube-wavefront correction module is used to correct the wavefront distortion of deep ultraviolet light and to modulate the multi-point array with the wavefront so that the beams of the multi-point array can all enter the entrance pupil of the lithography objective. The image rotation module is used to adjust the rotation angle of the entire multi-point array, thereby meeting the requirements of the writing strategy.

[0017] On the other hand, the present invention also provides a high-throughput laser direct writing method based on a deep ultraviolet light source, wherein the direct writing is performed using the aforementioned high-throughput laser direct writing system based on a deep ultraviolet light source, including: Deep ultraviolet laser is generated using a deep ultraviolet excimer laser, and the deep ultraviolet laser beam is expanded and distributed in a flat-top manner using a deep ultraviolet beam expanding and homogenizing module. The expanded deep ultraviolet laser beam is split into multiple sub-beams using a deep ultraviolet compatible beam splitter module; Multiple sub-multi-point arrays are combined into a multi-point array using a bundle combining module according to a set arrangement. By using a laser direct writing module to converge multiple points onto a displacement stage, high-throughput multi-point deep ultraviolet laser direct writing can be achieved.

[0018] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention utilizes a deep ultraviolet (DUV) diffusion homogenizing module to expand the DUV laser beam and achieve a flat-top intensity distribution. Then, a DUV-compatible beam splitting module is used to split the expanded and homogenized DUV beam into sub-beams of equal intensity. These sub-beams are then used to form multiple sub-multi-point arrays through a multi-point array generation module. Under the action of a beam combining module, a multi-point array with a considerable number of beams and a higher degree of compactness is formed. This multi-point array has uniform quality and adjustable distribution, enabling efficient fabrication of micro- and nano-devices with nanometer-level precision and large area. Attached Figure Description

[0019] Figure 1 A schematic diagram of the principle of a high-throughput multi-slot laser direct writing system based on a deep ultraviolet light source is provided for a specific embodiment of the present invention; Figure 2 A schematic diagram of a deep ultraviolet compatible beam splitter module provided in a specific embodiment of the present invention; Figure 3 A schematic diagram of a multi-dot matrix generation device provided in a specific embodiment of the present invention; Figure 4This is a schematic diagram of the optical path of the beam combining module provided in a specific embodiment of the present invention; Figure 5 This is a schematic diagram of a sub-multi-point array arrangement provided in a specific embodiment of the present invention. Detailed Implementation

[0020] To better understand the purpose, technical solution, and advantages of this application, the application is described and explained below in conjunction with the accompanying drawings and embodiments.

[0021] The specific embodiments of the present invention utilize the advantages of a multi-point array generation module combined with a deep ultraviolet light source to achieve "high throughput + ultra-narrow size" writing, which is suitable for the manufacturing requirements of nanoscale structures.

[0022] A specific embodiment of the present invention provides a high-throughput laser direct writing system based on a deep ultraviolet light source. According to the direction of light propagation, a deep ultraviolet excimer laser 1, a deep ultraviolet beam expanding and homogenizing module 2, a deep ultraviolet compatible beam splitting module 3, a multi-point array generation module 4, a beam combining module 5, a laser direct writing module, and a high-precision displacement platform 9 are arranged in sequence. The laser direct writing module includes a tube lens wavefront correction module 6, an image rotator 7, and a deep ultraviolet lithography objective lens 8.

[0023] The deep ultraviolet excimer laser 1 provided in the specific embodiment of the present invention is used to generate deep ultraviolet laser with a wavelength of 193nm or 266nm.

[0024] The deep ultraviolet beam expanding and homogenizing module 2 provided in this specific embodiment of the invention is used to expand, homogenize, and pre-compensate the deep ultraviolet laser beam. Specifically, the beam expansion provided in this embodiment refers to expanding the deep ultraviolet laser beam to a suitable size to meet the requirements of the subsequent DMD target size; the wavefront pre-compensation provided in this embodiment refers to using a "wavefront pre-compensation unit" (based on a phase correction plate, placed at the end of the beam expanding and homogenizing module 2) to compensate for the absorption distortion of subsequent modules in advance, resulting in a homogenized light intensity uniformity ≥95%, which is then used by the subsequent multi-point array generation module 4 to generate a multi-point array.

[0025] The deep ultraviolet-compatible beam splitting module 3 provided in this specific embodiment of the invention is used to split the expanded deep ultraviolet laser into N flat-topped sub-beams of equal intensity (N≥2). Each sub-beam corresponds to a multi-point array generation sub-module. The deep ultraviolet-compatible beam splitting module 3 includes N-1 calcium fluoride polarizing beam splitters and a sub-beam optical axis calibration unit, where N≥2. The N-1 calcium fluoride polarizing beam splitters are used to split the expanded deep ultraviolet laser into multiple sub-beams, and the sub-beam optical axis calibration unit is used to adjust the parallelism of the multiple sub-beams so that the parallelism of each sub-beam is ≤3μrad. This specific embodiment of the invention selects calcium fluoride polarizing beam splitters, which are materials that can simultaneously meet the requirements of "deep ultraviolet band adaptability, polarization beam splitting function, and system performance stability." Other materials (such as K9 glass and fused silica) result in greater light intensity loss and cannot guarantee the uniformity of each sub-array.

[0026] In one embodiment, such as Figure 2 As shown, when N=4, the deep ultraviolet compatible beam splitter module 3 includes three calcium fluoride polarizing beam splitters, namely the first calcium fluoride polarizing beam splitter 301, the second calcium fluoride polarizing beam splitter 302, and the third calcium fluoride polarizing beam splitter 303. Each of the second calcium fluoride polarizing beam splitter 302 and the third calcium fluoride polarizing beam splitter 303 has a reflector below its beam splitting path. When the expanded deep ultraviolet beam is first split into two beams by the first calcium fluoride polarizing beam splitter 301, the two beams are split again by the second calcium fluoride polarizing beam splitter 302 and the third calcium fluoride polarizing beam splitter 303, respectively. Part of the split beam is emitted directly, and the other part of the split beam is reflected by the set reflector before being emitted, thereby ensuring that the direction of the emitted sub-beams is consistent.

[0027] The multi-dot matrix generation module 4 provided in a specific embodiment of the present invention includes N sub-multi-dot matrix generation devices, each of which is as follows: Figure 3 As shown, it includes a digital micromirror device (DMD) 401, a lens group 402, a microlens array (MLA) 403, and an image rotator 404, where N ≥ 2, and each sub-multi-point array generation module is identical in optical path principle.

[0028] The digital micromirror device DMD401 provided in the specific embodiment of the present invention performs amplitude modulation on the incident light. Its pre-loaded digital mask precisely modulates the beam into the expected shape, and the beam is imaged proportionally onto the front focal plane of the microlens array 403 through the 4F imaging lens group 402.

[0029] The microlens array 403 provided in the specific embodiment of the present invention will be focused into a focal array after being modulated by the 4F imaging lens group 402. Then, the rotation angle of the array is adjusted by the image rotator 404, thereby obtaining a sub-multi-point array at an arbitrary angle. In addition, a deep ultraviolet special reflective film needs to be coated on the incident surface of the digital micromirror device DMD401 to meet the modulation requirements of the deep ultraviolet light source.

[0030] In one specific embodiment, the digital micromirror device (DMD401) is a densely distributed micromirror DMD with a target surface size of 0.95 inches and a resolution of at least 2160*3840. The present invention limits the target surface size to 0.95 inches to limit the size of a single sub-array, while limiting the resolution is to increase the number of inscribed dots in a single sub-array.

[0031] The digital micromirror device DMD401 provided in the specific embodiment of the present invention divides the effective pixel area into m×n micromirror array units. One micromirror array unit corresponds to one unit light spot. Each micromirror device unit includes k×k micromirrors. The k×k micromirrors contained in each micromirror device unit of the digital micromirror array DMD401 are independently switched between "on" and "off" states, thereby independently controlling the intensity and uniformity of each unit light spot.

[0032] The microlens array 403 provided in this specific embodiment of the invention includes m×n microlenses for focusing m×n incident unit light spots. One unit light spot corresponds to one microlens, and a maximum of m×n focal point arrays can be generated on the focal plane of the microlens array 403. The size of each microlens matches the size of the area enclosed by k×k micromirrors in the digital micromirror device.

[0033] The beam combining module 5 provided in the specific embodiment of the present invention combines the sub-multi-point arrays of each sub-multi-point array generation module. Each sub-multi-point array is an m×n focal array. Their number N and their relative positions determine the system's direct writing strategy. In one embodiment, the beam combining module 5 is composed of N beam combining devices.

[0034] In one embodiment, such as Figure 4 As shown, the beam combining module 5 consists of N mirrors. Sub-multi-point arrays 1 to N are spaced apart and enter their respective mirrors at certain intervals. In this specific embodiment of the invention, the mirrors can reduce the loss of deep ultraviolet light. After the beam is combined by the N mirrors, the sub-multi-point arrays form a large multi-point array arranged according to certain rules and emitted synchronously. They are arranged sequentially along the long side, with adjacent sub-multi-point arrays closely arranged. The arrangement on the objective lens focusing plane is as follows: Figure 4 As shown. It should be noted that when N is more than that, additional mirrors can be added to complete the arrangement and beam combining of the sub-arrays for the newly added optical paths.

[0035] The tube endoscope-wavefront correction module 6 provided in the specific embodiment of the present invention utilizes a "deformable mirror" (deep ultraviolet compatible) to correct the wavefront distortion of deep ultraviolet light in real time and modulate the wavefront of the multi-point array so that the diameter of the light spot reaching the entrance pupil of the photolithography objective lens is exactly matched with the entrance pupil of the objective lens.

[0036] The image rotator 7 provided in the specific embodiment of the present invention can control the overall rotation angle of the multi-point array, and when combined with the high-precision displacement platform 9 moving at a constant speed, it realizes the tilt scanning and writing strategy with densely packed pixels, which greatly improves the processing efficiency.

[0037] The field of view of the deep ultraviolet-compatible lithography objective 8 provided in this specific embodiment is determined by the size, number N, and arrangement of the sub-multi-point arrays. In this embodiment, the size of the sub-multi-point array in the multi-point array generation module 4 is determined by the size of the digital micromirror device 401 and the microlens array 403. The N sub-multi-point arrays after a specific arrangement need to be within the field of view of the deep ultraviolet-compatible lithography objective 8, such as... Figure 5 As shown, in one embodiment, when N=4, four sub-multi-point arrays are obtained on the focal plane of the deep ultraviolet compatible lithography objective 8.

[0038] The field of view (FOV) of the deep ultraviolet-compatible lithography objective 8 provided in this embodiment is ≥ N×L. Where N is the number of sub-arrays and L is the diagonal length of the sub-arrays.

[0039] The entrance pupil size of the deep ultraviolet compatible lithography objective 8 provided in this embodiment is jointly determined by the multi-dot array generation module 4 and the tube mirror-wavefront correction module 6, and the formula is: D=NA×f×2, where NA is the numerical aperture of the dot array generated by the multi-dot array generation module 4, f is the equivalent optical focal length of the tube mirror, and D is the entrance pupil diameter of the deep ultraviolet compatible lithography objective 8.

[0040] On the other hand, specific embodiments of the present invention also provide a high-throughput laser direct writing method based on a deep ultraviolet light source, wherein the direct writing is performed using the aforementioned high-throughput laser direct writing system based on a deep ultraviolet light source, including: Deep ultraviolet laser is generated using a deep ultraviolet excimer laser, and the deep ultraviolet laser beam is expanded and distributed in a flat-top manner using a deep ultraviolet beam expanding and homogenizing module.

[0041] The deep ultraviolet laser beam is split into multiple sub-beams using a deep ultraviolet compatible beam splitting module.

[0042] Multiple sub-multi-point arrays are combined into a multi-point array using a bundle combining module according to a set arrangement.

[0043] By using a laser direct writing module to converge multiple points onto a displacement stage, high-throughput multi-point deep ultraviolet laser direct writing can be achieved.

Claims

1. A high-throughput laser direct writing system based on a deep ultraviolet light source, characterized in that, According to the direction of light propagation, the following modules are set up in sequence: a deep ultraviolet excimer laser, a deep ultraviolet beam expanding and homogenizing module, a deep ultraviolet compatible beam splitting module, a multi-point array generation module, a beam combining module, and a laser direct writing module. The deep ultraviolet excimer laser is used to generate deep ultraviolet laser light; The deep ultraviolet beam expanding and homogenizing module is used to expand the deep ultraviolet laser beam and distribute the deep ultraviolet laser intensity in a flat-top manner. The deep ultraviolet compatible beam splitter module is used to split the expanded deep ultraviolet laser into multiple sub-beams; The multi-point array generation module is used to convert multiple sub-beams into corresponding multiple sub-multi-point arrays. The beam combining module is used to form a multi-point matrix by arranging multiple sub-multi-point matrices according to a set arrangement. The laser direct writing module is used to converge multiple points onto the displacement stage to achieve high-throughput multi-point deep ultraviolet laser direct writing.

2. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 1, characterized in that, The deep ultraviolet excimer laser is used to generate deep ultraviolet laser light with a wavelength of 193 nm or 266 nm.

3. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 1, characterized in that, The deep ultraviolet beam expansion and homogenization module includes a wavefront pre-compensation unit, which is used to absorb distortion in order to homogenize the light intensity of the input beam, and the light intensity uniformity after homogenization is ≥95%.

4. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 1, characterized in that, The deep ultraviolet compatible beam splitter module includes N-1 calcium fluoride polarizing beam splitters and sub-beam optical axis calibration units, where N≥2; The N-1 calcium fluoride polarizing beam splitters are used to split the expanded deep ultraviolet laser beam into multiple sub-beams. The sub-beam optical axis calibration unit is used to adjust the parallelism of multiple sub-beams.

5. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 1, characterized in that, The multi-point array generation module includes multiple sub-multi-point array generation devices, which are arranged sequentially according to the direction of light propagation: digital micromirror device, lens group, microlens array and image rotator. The incident surface of the digital micromirror device is coated with a special reflective film for deep ultraviolet light sources. The resolution of the digital micromirror device is not less than 2160×3840. The digital micromirror device is used to modulate the amplitude of the sub-beam. The lens group is used to image onto the front focal plane of the microlens array at a proportional scale; The microlens array is used to converge the modulated sub-beams into a focal array, and then the rotation angle of the array is adjusted by the image rotator to obtain a sub-multi-point array.

6. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 5, characterized in that, The digital micromirror device includes m×n micromirror array units, and the sub-beam passes through the m×n micromirror array units to obtain m×n unit light spots; Each micromirror array unit includes k×k micromirrors. By independently switching the k×k micromirrors on and off, the intensity and uniformity of the light spot in each unit can be independently controlled.

7. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 5, characterized in that, The microlens array includes m×n microlenses, which are used to focus the incident m×n unit light spots to generate an m×n focal array.

8. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 1, characterized in that, The beam combining module includes multiple reflectors. Each sub-multi-point array is incident on the corresponding reflector at a set distance. The multiple sub-multi-point arrays are arranged in a set direction through the multiple reflectors to obtain a multi-point array.

9. The high-throughput laser direct writing system based on a deep ultraviolet light source according to claim 1, characterized in that, The laser direct writing module is arranged in sequence according to the direction of light propagation, including the tube lens-wavefront correction module, the image rotation module, and the photolithography objective lens; The tube-wavefront correction module is used to correct the wavefront distortion of deep ultraviolet light and to modulate the multi-point array with the wavefront so that the beams of the multi-point array can all enter the entrance pupil of the lithography objective. The image rotation module is used to adjust the rotation angle of the entire multi-point array, thereby meeting the requirements of the writing strategy.

10. A high-throughput laser direct writing method based on a deep ultraviolet light source, characterized in that, Direct writing is performed using the high-throughput laser direct writing system based on a deep ultraviolet light source as described in any one of claims 1-9, comprising: Deep ultraviolet laser is generated using a deep ultraviolet excimer laser, and the deep ultraviolet laser beam is expanded and distributed in a flat-top manner using a deep ultraviolet beam expanding and homogenizing module. The expanded deep ultraviolet laser beam is split into multiple sub-beams using a deep ultraviolet compatible beam splitter module; Multiple sub-multi-point arrays are combined into a multi-point array using a bundle combining module according to a set arrangement. By using a laser direct writing module to converge multiple points onto a displacement stage, high-throughput multi-point deep ultraviolet laser direct writing can be achieved.

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