A thin film element and a method of manufacturing the same
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU JUZHEN PHOTOELECTRIC
- Filing Date
- 2025-12-31
- Publication Date
- 2026-05-12
Smart Images
Figure CN121442952B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of chip manufacturing technology, and more specifically, to a thin-film element and a method for preparing the same. Background Technology
[0002] In the field of chip manufacturing, to further enhance the properties of thin-film functional materials, thin-film transfer processes are commonly used to transfer functional thin films to other substrates such as magnetic substrates, sapphire, and glass. This process typically uses transfer adhesives, i.e., adhesives are used to transfer and bond the functional thin film to the substrate. Especially after the functional thin film is fabricated into a chip, for some chip designs with special structures, such as… Figure 1 The corner structure shown is prone to excessive current density and severe heat generation in areas where the chip is placed in an electrostatic discharge (ESD) environment, ultimately leading to device failure. The morphology of the damaged component is as follows. Figure 2 As shown.
[0003] Currently, most related technologies use the method of optimizing device resistance to reduce the voltage drop of the device when subjected to electrostatic shock. However, reducing the device resistance may lead to failure to meet performance requirements, and reducing the resistance under constant voltage operation in normal working environment will lead to increased power consumption of the device. Summary of the Invention
[0004] The purpose of this application is to provide a thin-film element and a method for preparing the same, so as to solve the above-mentioned problems.
[0005] In a first aspect, embodiments of this application provide a thin film element, the thin film element including a functional thin film layer; the functional thin film layer includes a first thin film region, a second thin film region, and a third thin film region, wherein: the inner side of the second thin film region is attached to the outer edge of the first thin film region; the second thin film region includes a third arcuate portion disposed at the outer corner of the second thin film region; the third thin film region includes a second arcuate portion and a first arcuate portion, the second arcuate portion is attached to the third arcuate portion, and the first arcuate portion is disposed on the side away from the second arcuate portion.
[0006] In the implementation of the above scheme, the functional thin film layer of the thin film element includes a third thin film region disposed at the corner structure. The third thin film region has an arc-shaped portion on the side away from the corner structure. On the one hand, the arc-shaped portion of the third thin film region can optimize the current distribution of the functional thin film layer. When subjected to electrostatic shock, the current distribution in the arc-shaped portion is smoother and more dispersed, thereby reducing the current density in the corner area when subjected to electrostatic shock. On the other hand, compared with the sharp corner structure, the arc-shaped portion can effectively reduce the electric field strength in the corner area, thereby reducing the degree of charge accumulation in the corner area, and further reducing the current density in the corner area when subjected to electrostatic shock. This effectively avoids problems such as local overheating and material damage caused by excessive current density at the corner structure, improves the stability and reliability of the element, and extends the service life of the thin film element.
[0007] In one implementation of the first aspect, the resistivity of the third thin film region is greater than that of the second thin film region, and the resistivity of the second thin film region is greater than that of the first thin film region.
[0008] In the implementation of the above scheme, by setting the resistivity of the first thin film region to the lowest level, the current can more easily pass through the first thin film region instead of being concentrated in the corner region. This helps to reduce the current density in the corner region when subjected to electrostatic shock, and reduces the risk of material damage caused by excessive current density. On the other hand, setting the resistivity of the first, second, and third thin film regions to increase sequentially can guide the current to gradually disperse from the corner region to the corner edge and the main material region, thereby achieving a uniform current distribution. Furthermore, the lower resistivity of the first thin film region can reduce the electric field strength and avoid excessive electric field concentration. When subjected to electrostatic shock, the electric field strength in the corner region is reduced, which can significantly reduce the risk of device breakdown caused by electric field concentration.
[0009] In one implementation of the first aspect, the ratio of the resistivity of the third thin film region to the resistivity of the second thin film region is greater than 1.5 to 2; the ratio of the resistivity of the third thin film region to the resistivity of the first thin film region is greater than 2 to 4.
[0010] In the implementation of the above scheme, the resistivity gradient of the first thin film region, the second thin film region and the third thin film region is controlled by the ratio between the resistivities. When the ratios are large, the resistivity gradient of the first thin film region, the second thin film region and the third thin film region is more obvious, which is beneficial to improve the current dispersion effect in the third thin film region, thereby reducing the current density in the corner area when subjected to electrostatic shock, and reducing the risk of device breakdown caused by electric field concentration.
[0011] In one implementation of the first aspect, the thickness of the third thin film region is less than the thickness of the second thin film region; the thickness of the second thin film region is less than the thickness of the first thin film region.
[0012] In the implementation of the above scheme, the resistivity of the thin film is controlled by controlling the film thickness. On the one hand, the resistivity of the thin film can be adjusted locally by adjusting the film thickness, which can optimize the performance without significantly changing the overall size and shape of the device, and is conducive to maintaining other performance of the device. On the other hand, controlling the film thickness is a relatively simple process, which is more cost-effective than introducing new materials or complex processes. Furthermore, adjusting the resistivity by controlling the film thickness can reduce the required process steps, which helps to improve production efficiency and shorten the production cycle.
[0013] In one implementation of the first aspect, the doping concentration of the third thin film region is less than the doping concentration of the second thin film region; the doping concentration of the second thin film region is less than the doping concentration of the first thin film region.
[0014] In the implementation of the above scheme, the resistivity of the thin film is controlled by controlling the doping concentration of the thin film. On the one hand, there is a clear relationship between doping concentration and resistivity. By precisely controlling the doping concentration, the resistivity of the thin film can be precisely controlled. On the other hand, by increasing the doping concentration in the first thin film region, the electric field can be effectively dispersed and the antistatic performance can be improved. Furthermore, by locally adjusting the doping concentration to control the resistivity, performance optimization can be achieved without significantly changing the overall size and shape of the device.
[0015] In one implementation of the first aspect, the radius of curvature of the first arcuate portion is 20~100. .
[0016] In the implementation of the above scheme, the radius of curvature of the first arc-shaped part is set to 20~100. In this way, on the one hand, it can effectively alleviate the device failure problem caused by electrostatic discharge; on the other hand, it can improve the antistatic capability without sacrificing the component performance and integration; furthermore, it can be achieved under existing photolithography, etching and doping processes without the need for additional special equipment or complex processes, thus reducing production costs and process difficulty.
[0017] In one implementation of the first aspect, the second film region further includes a fourth arcuate portion disposed at an inner corner, and the first film region includes a fifth arcuate portion disposed at an outer corner; the fourth arcuate portion and the fifth arcuate portion are attached to each other.
[0018] In the implementation of the above scheme, by setting an arc-shaped part at the inner corner of the second thin film region and setting an arc-shaped part at the outer corner of the first thin film region, more paths can be provided for the current, thereby reducing the current accumulation in the corner region, reducing the risk of device breakdown under high voltage conditions, and improving the device's withstand voltage capability; on the other hand, the arc-shaped part can significantly improve the reliability of the device and help reduce the risk of aging and failure of the device in long-term use.
[0019] Secondly, embodiments of this application provide a method for fabricating a thin-film element, comprising:
[0020] Functional materials are grown on a substrate;
[0021] Functional image etching is performed on the grown functional material to obtain a functional thin film layer;
[0022] Electrode metal evaporation is performed to complete the fabrication of thin-film devices;
[0023] The functional thin film layer includes a first thin film region, a second thin film region, and a third thin film region; the inner side of the second thin film region is attached to the outer edge of the first thin film region; the second thin film region includes a third arc-shaped portion disposed at the outer corner of the second thin film region; the third thin film region includes a second arc-shaped portion and a first arc-shaped portion, the second arc-shaped portion is attached to the third arc-shaped portion, and the first arc-shaped portion is disposed on the side away from the second arc-shaped portion.
[0024] In one implementation of the second aspect, the resistivity of the third thin film region in the functional thin film layer is greater than the resistivity of the second thin film region, and the resistivity of the second thin film region is greater than the resistivity of the first thin film region.
[0025] The process of performing functional image etching on the grown functional material to obtain a functional thin film layer includes:
[0026] Functional thin film layers are obtained by photolithography and etching of functional materials;
[0027] A corrosion barrier layer is added to the first thin film region, and the second and third thin film regions are etched to make the thickness of the second thin film region less than the thickness of the first thin film region.
[0028] An etching barrier layer is added to the second thin film region, and the third thin film region is etched to make the thickness of the third thin film region less than the thickness of the second thin film region.
[0029] In one implementation of the second aspect, the resistivity of the third thin film region in the functional thin film layer is greater than the resistivity of the second thin film region, and the resistivity of the second thin film region is greater than the resistivity of the first thin film region.
[0030] After performing functional image etching on the grown functional material to obtain a functional thin film layer, the method further includes:
[0031] Ion implantation or thermal diffusion is performed on the first and second thin film regions to make the doping concentration of the third thin film region lower than that of the second thin film region.
[0032] The first thin film region is subjected to ion implantation or thermal diffusion treatment so that the doping concentration of the second thin film region is lower than that of the first thin film region.
[0033] Other features and advantages of this application will be set forth in the following description and will be apparent in part from the description or may be learned by practicing embodiments of this application. The objectives and other advantages of this application may be realized and obtained by means of the structures particularly pointed out in the written description, claims, and drawings. Attached Figure Description
[0034] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0035] Figure 1 This is a schematic diagram of the structure of a thin-film element with a corner structure provided in an embodiment of this application;
[0036] Figure 2 This is a schematic diagram of the damage morphology at the corner of a thin film element after antistatic damage, provided in an embodiment of this application.
[0037] Figure 3 This is a schematic diagram of the structure of the functional thin film layer provided in the embodiments of this application;
[0038] Figure 4 This is a schematic diagram of the structure of the third thin film region provided in an embodiment of this application;
[0039] Figure 5 A cross-sectional schematic diagram of a thin film element provided for an embodiment of this application when adjusting the resistivity of the thin film by thickness;
[0040] Figure 6 A cross-sectional schematic diagram of a thin film element provided for an embodiment of this application when adjusting the resistivity of the thin film by doping concentration;
[0041] Figure 7 A schematic diagram of the structure of the Hall element provided in the embodiments of this application;
[0042] Figure 8 This is a schematic diagram illustrating the connection method between the functional thin film layer and the metal electrode provided in the embodiments of this application;
[0043] Figure 9 A schematic diagram of the ESD simulation verification results of the thin-film element before the improvement provided in the embodiments of this application; wherein, Figure 9 (a) Schematic diagram of current density simulation results when performing ESD simulation verification on the thin film device before improvement; Figure 9 (b) A schematic diagram of temperature simulation results when performing ESD simulation verification on the thin film device before the improvement;
[0044] Figure 10 A schematic diagram illustrating the ESD simulation verification results of the improved thin-film element provided in this application embodiment; wherein, Figure 10 (a) Schematic diagram of current density simulation results when performing ESD simulation verification on the improved thin film device; Figure 10 (b) A schematic diagram of temperature simulation results during ESD simulation verification of the improved thin-film device;
[0045] Figure 11 This is a schematic flowchart of the thin-film element fabrication method provided in the embodiments of this application;
[0046] Figure 12 This is another schematic flowchart of the thin film element fabrication method provided in the embodiments of this application;
[0047] Figure 13 This is another schematic flowchart of the thin film element fabrication method provided in the embodiments of this application;
[0048] Figure 14 This is a schematic diagram of the structure of the functional thin film layer obtained after functional image etching during the fabrication of the thin film element provided in the embodiments of this application.
[0049] Figure 15 This is a schematic diagram of the structure of the functional thin film layer obtained after a second etching during the fabrication of the thin film element provided in the embodiments of this application.
[0050] Figure 16 This is a schematic diagram of the structure of the functional thin film layer obtained after the third etching during the fabrication of the thin film element provided in the embodiments of this application.
[0051] The numbers in the diagram are as follows:
[0052] 110. Functional thin film layer; 111. First thin film region; 112. Second thin film region; 113. Third thin film region; 1111. Fifth arc-shaped portion; 1121. Fourth arc-shaped portion; 1122. Third arc-shaped portion; 1131. Second arc-shaped portion; 1132. First arc-shaped portion. Detailed Implementation
[0053] The technical solutions of the embodiments of this application will now be described with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0054] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. The terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one…" does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. The terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0055] Before introducing the embodiments of this application, a brief introduction to the technical concepts involved in this application will be given first.
[0056] ESD (Electrostatic Discharge): Electrostatic discharge refers to the transfer of electrostatic charge between objects with different electrostatic potentials. In the electronics industry, ESD is one of the main causes of damage to electronic equipment. Since ESD-induced damage can affect the normal operation of chips, circuit boards, and electronic components, ESD protection is crucial. To prevent ESD damage to electronic equipment, a series of protective measures are required. First, the generation and accumulation of static electricity need to be controlled, such as by using anti-static materials, maintaining the humidity of the working environment, and grounding. Second, effective ESD protection measures need to be implemented, such as using anti-static packaging, anti-static workbenches, and anti-static gloves. Furthermore, ESD testing and evaluation of electronic equipment are necessary to ensure its ability to withstand the effects of electrostatic discharge.
[0057] Thin-film devices are electronic components manufactured using thin-film technology. Their core consists of thin-film materials with a thickness ranging from a few nanometers to hundreds of micrometers. These materials are deposited on a substrate using physical or chemical methods to form functional thin-film structures with specific electrical, optical, and magnetic properties, enabling specific functions such as signal processing, energy conversion, and sensing. Thin-film devices typically feature miniaturization, high performance, and high integration, and are widely used in microelectronics, optoelectronics, sensors, and micro-electro-mechanical systems (MEMS). Common thin-film devices include, but are not limited to:
[0058] (1) Hall element: A Hall element is a magnetic sensor based on the Hall effect. It can convert magnetic field signals into electrical signals, thereby realizing the detection and measurement of magnetic fields. The Hall effect refers to the phenomenon that when current passes through a conductor placed in a magnetic field, the charge carriers in the conductor are subjected to the Lorentz force, causing the charge to accumulate in the transverse direction of the conductor, thus generating a potential difference on both sides of the conductor, i.e., the Hall voltage. Functional thin film of Hall element: A semiconductor material thin film used to generate the Hall effect and realize its function. The Hall element is a magnetic sensor based on the Hall effect and is widely used in fields such as magnetic field detection and current measurement. The functional thin film is the core part of the Hall element, and its characteristics and quality directly affect the performance of the element. Functional thin films are usually made of semiconductor materials with high mobility, such as indium gallium arsenide (GaInAs), indium antimonide (InSb), and gallium arsenide (GaAs). These materials have good electrical conductivity and charge carrier mobility, and can effectively generate the Hall effect.
[0059] (2) Micro-Electro-Mechanical System (MEMS) components: such as micromirrors, micropumps, and microsensors. Their functional thin films can be formed into complex geometries, including corner structures, to achieve functions such as mechanical motion, fluid control, and physical quantity sensing. For example, the reflective mirrors and support structures in micromirrors are usually made of thin film materials, and specific corners and shapes are formed through precise patterning and processing to meet the requirements of optical reflection and mechanical rotation.
[0060] (3) Radio frequency (RF) components: such as RF filters, RF switches, etc., use thin film technology to construct complex circuit patterns. The corner structure plays a key role in the transmission and processing of high-frequency signals, affecting the performance and reliability of the components.
[0061] (4) Organic Light Emitting Diode (OLED) Display Panel Elements: The anode and cathode in an OLED display panel are typically composed of multiple thin films, which form corner structures during the patterning process. The performance of these thin film elements directly affects the luminous efficiency, color performance, and lifespan of the display panel.
[0062] (5) Three-dimensional integrated circuit (3D IC) components: In 3D IC, thin films are stacked to form a vertical interconnect structure. The corner structure is crucial for achieving efficient interconnection and signal transmission between chips, and it also affects the chip's integration and overall performance.
[0063] Currently, in order to reduce the current density in special structural regions of thin-film devices when subjected to electrostatic discharge (ESD), the following two methods are generally used:
[0064] Method 1: Reduce the device resistance so that in the HBM model (Human Body Model, a common model in ESD testing used to simulate the electrostatic discharge process when a human body comes into contact with electronic devices), the device will experience a corresponding reduction in electrostatic shock after voltage division due to the reduced resistance.
[0065] Method 2: Remove the cross-shaped corner structure and change the cross-shaped device into a square device.
[0066] If the first method is used to optimize the thin-film element, the reduced element resistance may cause the device to fail to meet performance requirements. Furthermore, under normal operating conditions with constant voltage, the reduced resistance will lead to an increase in the power consumption of the thin-film element. If the second method is used to optimize the thin-film element, the square structure after removing the cross-shaped corner structure will also result in a significant performance sacrifice due to the decrease in element resistance.
[0067] Based on this, this application provides a thin-film element whose functional thin-film layer includes a third thin-film region disposed at a corner structure. The third thin-film region has an arc-shaped portion on the side away from the corner structure. On the one hand, the arc-shaped portion of the third thin-film region can optimize the current distribution of the functional thin-film layer. When subjected to electrostatic discharge (ESD), the current distribution in the arc-shaped portion is smoother and more dispersed, thereby reducing the current density in the corner area when subjected to ESD. On the other hand, compared with a sharp corner structure, the arc-shaped portion can effectively reduce the electric field strength in the corner area, thereby reducing the degree of charge accumulation in the corner area, and further reducing the current density in the corner area when subjected to ESD. This effectively avoids problems such as local overheating and material damage caused by excessive current density at the corner structure, improves the stability and reliability of the element, and extends the service life of the thin-film element.
[0068] The structure of the above-mentioned thin-film element is described below:
[0069] Please see Figure 3 , Figure 4 and Figure 7This application provides a thin-film element including a functional thin-film layer 110. The functional thin-film layer 110 includes a first thin-film region 111, a second thin-film region 112, and a third thin-film region 113, wherein:
[0070] The inner side of the second film region 112 is attached to the outer edge of the first film region 111;
[0071] The second film region 112 includes a third arcuate portion 1122 disposed at the outer corner of the second film region 112; the third film region 113 includes a second arcuate portion 1131 and a first arcuate portion 1132, the second arcuate portion 1131 is attached to the third arcuate portion 1122, and the first arcuate portion 1132 is disposed on the side away from the second arcuate portion 1131.
[0072] Optionally, the radius of curvature of the first arcuate portion 1132 is 20~100. .
[0073] For example, the radius of curvature of the second arcuate portion 1131 is 5 to 50. The radius of curvature of the second arc-shaped portion 1131 is smaller than that of the first arc-shaped portion 1132. For example, the radius of curvature of the first arc-shaped portion is 50. In this case, the radius of curvature of the second arc-shaped portion 1131 can be set to 10~25. For example, the radius of curvature of the first arcuate portion 1132 of the third thin film region 113 can be set based on the following angle:
[0074] (1) Electric field distribution optimization angle: The setting of the radius of curvature needs to reduce the electric field concentration in the corner area, and also needs to match the working voltage;
[0075] (2) From the perspective of process feasibility and precision control: The setting of the radius of curvature needs to take into account the current precision of photolithography and etching processes;
[0076] (3) Impact on component performance: Too small a radius of curvature cannot effectively alleviate the problem of electric field concentration in the corner area, while too large a radius of curvature will significantly increase the component size, leading to a decrease in integration density;
[0077] (4) Impact on cost-effectiveness: The setting of the radius of curvature needs to balance the increased cost with the benefits gained.
[0078] The above solution sets the radius of curvature of the first arc-shaped portion 1132 to 20~100. In this way, on the one hand, it can effectively alleviate the device failure problem caused by electrostatic discharge; on the other hand, it can improve the antistatic capability without sacrificing the component performance and integration; furthermore, it can be achieved under existing photolithography, etching and doping processes without the need for additional special equipment or complex processes, thus reducing production costs and process difficulty.
[0079] Optionally, the resistivity of the third thin film region 113 is greater than the resistivity of the second thin film region 112, and the resistivity of the second thin film region 112 is greater than the resistivity of the first thin film region 111.
[0080] The resistivity mentioned above is a physical quantity describing the electrical conductivity of a material, and its unit is ohm-meter (Ω). m), mainly used to indicate the degree to which a material impedes the passage of electric current.
[0081] The above solution sets the resistivity of the first thin film region 111 to the lowest level, making it easier for current to pass through the first thin film region 111 instead of concentrating in the corner area. This helps to reduce the current density in the corner area when subjected to electrostatic discharge (ESD) and reduces the risk of material damage due to excessive current density. On the other hand, setting the resistivity of the first thin film region 111, the second thin film region 112, and the third thin film region 113 to increase sequentially can guide the current to gradually disperse from the corner area to the corner edge and the main body area, thereby achieving a uniform current distribution. Furthermore, the lower resistivity of the first thin film region 111 can reduce the electric field strength and avoid excessive electric field concentration. When subjected to ESD, the electric field strength in the corner area is reduced, which can significantly reduce the risk of device breakdown caused by electric field concentration.
[0082] Optionally, the ratio of the resistivity of the third thin film region 113 to the resistivity of the second thin film region 112 is greater than 1.5 to 2; the ratio of the resistivity of the third thin film region 113 to the resistivity of the first thin film region 111 is greater than 2 to 4.
[0083] For example, the resistivity relationship of the first thin film region 111, the second thin film region 112, and the third thin film region 113 can be expressed as:
[0084]
[0085] in, , and These are the resistivity of the first thin film region 111, the resistivity of the second thin film region 112, and the resistivity of the third thin film region 113, respectively.
[0086] The above scheme controls the resistivity gradient of the first thin film region 111, the second thin film region 112, and the third thin film region 113 by the ratio between the resistivities. When the ratios differ greatly, the resistivity gradient of the first thin film region 111, the second thin film region 112, and the third thin film region 113 is more obvious, which is beneficial to improve the current dispersion effect in the third thin film region 113, thereby reducing the current density in the corner area when subjected to electrostatic shock and reducing the risk of device breakdown caused by electric field concentration.
[0087] For example, the resistivity of the first thin film region 111, the second thin film region 112, and the third thin film region 113 can be controlled by at least one or both of the following methods:
[0088] Method 1: Control the resistivity of each thin film region by controlling the thickness of each thin film region.
[0089] The resistivity of a thin film can be changed by adjusting its cross-sectional area, which in turn alters the film's resistivity. Optionally, please refer to [link to relevant documentation]. Figure 5 The thickness of the third thin film region 113 is less than the thickness of the second thin film region 112, and the thickness of the second thin film region 112 is less than the thickness of the first thin film region 111.
[0090] The above-mentioned scheme controls the resistivity of the thin film by controlling the film thickness. On the one hand, the resistivity of the thin film can be optimized by adjusting the film thickness locally, without significantly changing the overall size and shape of the device, which is beneficial to maintaining other performance characteristics of the device. On the other hand, controlling the film thickness is a relatively simple process, which is more cost-effective than introducing new materials or complex processes. Furthermore, adjusting the resistivity by controlling the film thickness can reduce the required process steps, which helps to improve production efficiency and shorten the production cycle.
[0091] For example, each thin film region can have a uniform thickness, meaning the thickness of the film is the same everywhere, as long as the thickness of the third thin film region 113 < the thickness of the second thin film region 112 < the thickness of the first thin film region 111. Of course, each thin film region can also have a non-uniform thickness, for example, by setting a certain gradient thickness so that the thickness at the connection between the thin film regions changes gradually rather than abruptly, such as... Figure 5 As shown, the second thin film region 112 adopts a gradient thickness at the connection with the third thin film region 113 and at the connection between the first thin film region 111 and the second thin film region 112.
[0092] It is understandable that gradient thickness can smooth the electric field distribution and reduce electric field concentration, thereby improving the electrical performance and reliability of thin film devices. In addition, gradient thickness can also improve the interfacial bonding quality between thin films, reduce the formation of interfacial defects and voids, and help improve the electrical and thermal conductivity of thin films.
[0093] Method 2: Control the resistivity of each thin film region by controlling the doping concentration of each region.
[0094] Understandably, the higher the doping concentration in a thin film, the more additional charge carriers (electrons or holes) are provided, thereby increasing the charge carrier concentration in the material, resulting in stronger conductivity and lower resistivity of the thin film.
[0095] Optional, please see Figure 6 The doping concentration of the third thin film region 113 is less than the doping concentration of the second thin film region 112; the doping concentration of the second thin film region 112 is less than the doping concentration of the first thin film region 111.
[0096] For example, the doping concentration of the thin film can be controlled through ion implantation or thermal diffusion, or by controlling the process of different epitaxial layers. Wherein:
[0097] (1) Ion implantation: This is a technique that directly implants impurity ions into a thin film. First, impurity atoms are ionized to form an ion beam. Then, the impurity ions are accelerated under the action of an accelerating electric field, so that they gain sufficient kinetic energy and are injected into the thin film. By controlling the accelerating voltage and beam current intensity, the type, concentration, and distribution depth of the impurities can be precisely controlled.
[0098] (2) Thermal diffusion: The electrical properties of a material are altered by utilizing the principle that impurity atoms diffuse from a high-concentration region to a low-concentration region at high temperatures. The thin film is brought into contact with the impurity source and then heated in a high-temperature furnace to allow impurity atoms to diffuse into the thin film.
[0099] (3) Stepped epitaxy: Materials with different doping concentrations are grown layer by layer by MOCVD or MBE. The required doping concentration layer can be retained by local etching, so as to achieve the difference in material doping concentration at different positions on the functional pattern.
[0100] The above scheme controls the resistivity of the thin film by controlling the doping concentration. On the one hand, there is a clear relationship between doping concentration and resistivity. By precisely controlling the doping concentration, the resistivity of the thin film can be precisely controlled. On the other hand, by increasing the doping concentration in the first thin film region 111, the electric field can be effectively dispersed and the antistatic performance can be improved. Furthermore, by controlling the resistivity by locally adjusting the doping concentration, performance optimization can be achieved without significantly changing the overall size and shape of the device.
[0101] Optional, please see Figure 3 The second film region 112 also includes a fourth arc-shaped portion 1121 disposed at the inner corner, and the first film region 111 includes a fifth arc-shaped portion 1111 disposed at the outer corner; the fourth arc-shaped portion 1121 and the fifth arc-shaped portion 1111 are attached to each other.
[0102] The above solution provides more paths for current by setting an arc-shaped part at the inner corner of the second thin film region 112 and an arc-shaped part at the outer corner of the first thin film region 111, thereby reducing the accumulation of current in the corner region, reducing the risk of device breakdown under high voltage conditions, and improving the device's withstand voltage capability. On the other hand, the arc-shaped part can significantly improve the reliability of the device and help reduce the risk of aging and failure of the device during long-term use.
[0103] Optional, please see Figure 8 The aforementioned thin-film element also includes a metal electrode 120, which can be prepared by thermal evaporation or magnetron sputtering.
[0104] Optionally, the contact area between the functional thin film layer 110 and the metal electrode 120 can be designed as stepped or serrated, thereby forming a serrated contact area. It is understood that the serrated contact area helps to achieve stable contact between the metal electrode 120 and the functional thin film layer 110, reducing material damage caused by increased contact resistance due to poor contact in the connection area.
[0105] To verify the performance of the aforementioned thin-film device, simulation verification was also performed in the embodiments of this application, specifically for the unmodified thin-film device (e.g., Figure 1 (The thin film element shown) and the thin film element protected by the embodiments of this application (e.g.) Figure 3 The thin-film element shown (i.e., the improved thin-film element) was subjected to ESD simulation verification. The simulation results are as follows: Figure 9 and Figure 10 As shown, among which, by Figure 9 (a) It can be seen that during ESD simulation verification, the current density of the unmodified thin-film device is higher in the corner region; from Figure 9 (b) It can be seen that during ESD simulation verification, the temperature of the unmodified thin-film device at the corner region can reach up to 420℃; Figure 10 (a) It can be seen that during ESD simulation verification, the improved thin-film device exhibits lower current density at the corner region; from Figure 10 (b) It can be seen that during ESD simulation verification, the temperature of the improved thin film element at the corner region can reach up to 270°C. Therefore, it can be seen that the thin film element protected in this application can effectively reduce the current density and temperature at the corner region when the thin film element is subjected to electrostatic shock.
[0106] Please see Figure 11 Based on the same inventive concept, this application also provides a method for preparing a thin-film element, comprising:
[0107] Step S210: Perform functional material growth on the substrate;
[0108] Step S220: Perform functional image etching on the grown functional material to obtain the functional thin film layer 110;
[0109] Step S230: Perform electrode metal evaporation to obtain metal electrode 120, thus completing the preparation of thin film device;
[0110] The functional thin film layer includes a first thin film region 111, a second thin film region 112, and a third thin film region 113; the inner side of the second thin film region 112 is attached to the outer edge of the first thin film region 111; the second thin film region 112 includes a third arcuate portion 1122 disposed at the outer corner of the second thin film region 112; the third thin film region 113 includes a second arcuate portion 1131 and a first arcuate portion 1132, the second arcuate portion 1131 is attached to the third arcuate portion 1122, and the first arcuate portion 1132 is disposed on the side away from the second arcuate portion 1131.
[0111] The aforementioned substrate refers to the underlying structure that supports thin-film devices and provides the basis for their electrical performance; it is an important component of thin-film devices.
[0112] For indium antimonide thin film devices, the above step S210 can be completed by processes such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or thermal evaporation. For specific growth processes, please refer to relevant technologies. The embodiments in this application will not be described in detail.
[0113] For example, step S220 above can be performed by etching the functional image using a dry or wet process to obtain the functional thin film layer 110.
[0114] Optionally, the resistivity of the third thin film region 113 in the functional thin film layer 110 is greater than the resistivity of the second thin film region 112, and the resistivity of the second thin film region 112 is greater than the resistivity of the first thin film region 111.
[0115] Please see Figure 12 The above step S220 includes:
[0116] Step S221: Perform photolithography and etching on the functional material to obtain the functional thin film layer 110;
[0117] It is understood that the functional thin film layer 110 obtained in step S221 is the initial functional thin film layer 110, such as... Figure 14 As shown, steps S222 and S223 are required to obtain the desired result. Figure 3 The functional thin film layer 110 shown.
[0118] Step S222: Add an etching barrier layer to the first thin film region 111, and etch the second thin film region 112 and the third thin film region 113 so that the thickness of the second thin film region 112 is less than the thickness of the first thin film region 111.
[0119] Step S222 can be understood as performing a second etching on the functional thin film layer 110 obtained in step S221, and the resulting functional thin film layer 110 is as follows: Figure 15 As shown;
[0120] Step S223: Add an etching barrier layer to the second thin film region 112 and etch the third thin film region 113 so that the thickness of the third thin film region 113 is greater than the thickness of the second thin film region 112.
[0121] The functional thin film layer 110 obtained in step S223 is as follows Figure 16 As shown.
[0122] Optionally, the resistivity of the third thin film region 113 in the functional thin film layer 110 is greater than the resistivity of the second thin film region 112, and the resistivity of the second thin film region 112 is greater than the resistivity of the first thin film region 111.
[0123] Please see Figure 13 After step S220, the above-mentioned thin film element fabrication method further includes:
[0124] Step S241: Ion implantation or thermal diffusion treatment is performed on the first thin film region 111 and the second thin film region 112 so that the doping concentration of the third thin film region 113 is less than that of the second thin film region 112.
[0125] Step S242: Perform ion implantation or thermal diffusion treatment on the first thin film region 111 so that the doping concentration of the second thin film region 112 is less than the doping concentration of the first thin film region 111.
[0126] Understandably, when fabricating thin-film devices, the fabrication process can be selected in combination based on the specific feasible conditions of doping and etching. For example, a process of implantation followed by etching can be selected.
[0127] In the embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and there may be other division methods in actual implementation. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the coupling or direct coupling or communication connection shown or discussed may be through some communication interface; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.
[0128] Furthermore, the units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0129] Furthermore, the functional modules in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.
[0130] It should be noted that if a function is implemented as a software module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0131] In this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, without necessarily requiring or implying any such actual relationship or order between these entities or operations.
[0132] The above are merely embodiments of this application and are not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.
Claims
1. A thin-film element, characterized in that, The thin-film element includes a functional thin-film layer; the functional thin-film layer includes a first thin-film region, a second thin-film region, and a third thin-film region, wherein: The inner side of the second film region is attached to the outer edge of the first film region; The second film region includes a third arc-shaped portion disposed at the outer corner of the second film region; the third film region includes a first arc-shaped portion and a second arc-shaped portion, the second arc-shaped portion is attached to the third arc-shaped portion, and the first arc-shaped portion is disposed on the side away from the second arc-shaped portion; The resistivity of the third thin film region is greater than that of the second thin film region, and the resistivity of the second thin film region is greater than that of the first thin film region. The second film area further includes a fourth arc-shaped portion disposed at the inner corner, and the first film area includes a fifth arc-shaped portion disposed at the outer corner; the fourth arc-shaped portion and the fifth arc-shaped portion are attached to each other.
2. The thin-film element according to claim 1, characterized in that, The ratio of the resistivity of the third thin film region to that of the second thin film region is greater than 1.5 to 2; the ratio of the resistivity of the third thin film region to that of the first thin film region is greater than 2 to 4.
3. The thin-film element according to claim 1, characterized in that, The thickness of the third film region is less than the thickness of the second film region; the thickness of the second film region is less than the thickness of the first film region.
4. The thin-film element according to claim 1 or 3, characterized in that, The doping concentration of the third thin film region is less than that of the second thin film region; the doping concentration of the second thin film region is less than that of the first thin film region.
5. The thin-film element according to claim 1, characterized in that, The radius of curvature of the first arc-shaped portion is 20~100. .
6. A method for fabricating a thin-film element, characterized in that, The method includes: Functional materials are grown on a substrate; Functional image etching is performed on the grown functional material to obtain a functional thin film layer; Electrode metal evaporation is performed to complete the fabrication of thin-film devices; The functional thin film layer includes a first thin film region, a second thin film region, and a third thin film region; the inner side of the second thin film region is attached to the outer edge of the first thin film region; the second thin film region includes a third arc-shaped portion disposed at the outer corner of the second thin film region; the third thin film region includes a second arc-shaped portion and a first arc-shaped portion, the second arc-shaped portion is attached to the third arc-shaped portion, and the first arc-shaped portion is disposed on the side away from the second arc-shaped portion; the resistivity of the third thin film region is greater than the resistivity of the second thin film region, and the resistivity of the second thin film region is greater than the resistivity of the first thin film region; the second thin film region further includes a fourth arc-shaped portion disposed at the inner corner, and the first thin film region includes a fifth arc-shaped portion disposed at the outer corner; the fourth arc-shaped portion is attached to the fifth arc-shaped portion.
7. The method for preparing a thin-film element according to claim 6, characterized in that, The process of performing functional image etching on the grown functional material to obtain a functional thin film layer includes: Functional thin film layers are obtained by photolithography and etching of functional materials; A corrosion barrier layer is added to the first thin film region, and the second and third thin film regions are etched to make the thickness of the second thin film region less than the thickness of the first thin film region. An etching barrier layer is added to the second thin film region, and the third thin film region is etched so that the thickness of the third thin film region is less than the thickness of the second thin film region.
8. The method for preparing a thin-film element according to claim 6, characterized in that, After performing functional image etching on the grown functional material to obtain a functional thin film layer, the method further includes: Ion implantation or thermal diffusion is performed on the first and second thin film regions to make the doping concentration of the third thin film region lower than that of the second thin film region. The first thin film region is subjected to ion implantation or thermal diffusion treatment so that the doping concentration of the second thin film region is lower than that of the first thin film region.