A large curvature wafer defect detection device and detection light path

CN121476232BActive Publication Date: 2026-06-19FABOS (NINGBO) SEMICON EQUIP CO LTD

Patent Information

Authority / Receiving Office: CN · China
Patent Type: Patents(China)
Current Assignee / Owner: FABOS (NINGBO) SEMICON EQUIP CO LTD
Filing Date: 2025-12-31
Publication Date: 2026-06-19

AI Technical Summary

Technical Problem

Existing wafer defect detection equipment cannot effectively identify edge defects in wafers with large warpage because the optical path cannot be adjusted according to the wafer warpage shape, resulting in the light not being incident perpendicularly, the convergence point of the reflected light being offset, and the image not being able to completely cover the wafer edge.

Method used

By employing a beam splitter prism and an imaging lens assembly, the light source and imaging lens assembly are moved and adjusted via a guide rail structure. Combined with a polarizing beam splitter prism and a quarter-wave plate, the optical path can be flexibly adjusted, stray light can be eliminated, and imaging accuracy can be improved.

Benefits of technology

It enables complete imaging of large warped wafers, reduces equipment costs, improves detection accuracy and imaging clarity, and simplifies detection steps.

✦ Generated by Eureka AI based on patent content.

Smart Images

Figure CN121476232B_ABST

Patent Text Reader

Abstract

This invention relates to the field of wafer defect detection technology and discloses a wafer defect detection device with large warpage, including a beam splitter prism and an imaging lens group. A light source and a collimating lens group are respectively arranged on both sides of the incident surface of the beam splitter prism. The light source, beam splitter prism, and collimating lens group are arranged sequentially in a straight line. By moving the light source, the light source can be brought closer to or away from the beam splitter prism, thereby adjusting the incident angle of the output light path in the detection optical path, and thus adjusting the illumination intensity of the light. By bringing the light source closer to the beam splitter prism, when the light source passes through the beam splitter prism to detect a wafer with a large warpage concave surface, the light illuminating the edge of the large warpage concave surface can be brightened, so as to facilitate complete imaging of the imaging lens group and the charge coupler. By moving the light source away from the beam splitter prism, when the light source passes through the beam splitter prism to detect a wafer with a large warpage convex surface, the light illuminating the center of the large warpage concave surface can be brightened, so as to facilitate complete imaging of the charge coupler.

Need to check novelty before this filing date? Find Prior Art