Epitaxial wafer cleaning water treatment device and treatment method

Abstract

The application belongs to the technical field of epitaxial wafer cleaning water treatment, and particularly relates to an epitaxial wafer cleaning water treatment device and a treatment method, which comprises a box body, further comprises a supporting plate, a supporting frame and an epitaxial wafer, a shunt assembly comprising a plurality of shunt plates and shunt pipelines, when different solutions are used to clean the epitaxial wafer, the different solutions are collected and treated through different solution channels formed between the plurality of shunt plates, an air isolation assembly comprising a sliding block and an arc-shaped block, when a certain solution is used to clean the epitaxial wafer, the corresponding shunt pipeline is opened, the remaining shunt pipelines are kept closed under the action of the sliding block, and the arc-shaped block drives the shunt assembly to vibrate, so that the different waste liquids are physically isolated through the shunt pipelines, chemical reactions and secondary pollution are prevented, the air isolation assembly dynamically seals the non-working pipelines, cross talk of harmful gases is prevented, and cross pollution is prevented, and the high-frequency micro-vibration of the deflector can automatically shake off residual liquid drops.

Description

Technical Field

[0001] This invention belongs to the field of epitaxial wafer cleaning water treatment technology, specifically an epitaxial wafer cleaning water treatment device and treatment method. Background Technology

[0002] In the traditional epitaxial wafer cleaning process, multiple chemical solutions are used in sequence, resulting in cleaning water with complex composition and different properties. Existing treatment devices mostly use a single pipeline for centralized collection, which causes wastewater of different properties to mix during transportation, easily leading to neutralization, precipitation, and even the generation of harmful gases. This not only increases the difficulty and cost of subsequent treatment but also poses safety and environmental hazards. In addition, residual droplets inside the equipment are difficult to completely remove, which can easily cause cross-contamination and component corrosion.

[0003] CN115583751A discloses an epitaxial wafer washing water treatment device and method, including: a raw water tank, a coagulation tank, a filter, an antifouling UF membrane, a filtration tank, a security filter, and an RO membrane; wherein each component is connected by connecting pipes; the epitaxial wafer washing water is first stored in the raw water tank, then enters the coagulation tank for silicon precipitation, then passes through the filter, then passes through the antifouling UF membrane to remove suspended particles in the epitaxial wafer washing water, then enters the filtration tank, and finally passes through the security filter to enter the RO membrane for deion filtration.

[0004] The above-mentioned scheme has a simple structure, using a single pipeline to collect all cleaning wastewater. It lacks a multi-channel diversion mechanism, and chemical solutions of different properties are mixed before entering the subsequent treatment system. This can easily lead to neutralization reactions that produce precipitation and even generate harmful gases, increasing the difficulty and cost of subsequent water treatment. It also fails to achieve the classification and treatment of different pollutants and resource recovery.

[0005] Meanwhile, the pipeline is always open when treating specific wastewater, which causes volatile gases to cross-diffuse between different treatment units, resulting in secondary reactions between waste gas and waste liquid. This not only affects the treatment effect but also poses safety hazards and increases the extra burden of waste gas treatment.

[0006] Furthermore, after cleaning, solution may adhere to the inner walls of pipes and equipment. Long-term operation will cause the accumulation of pollutants, which will not only affect the treatment efficiency, but may also corrode system components, increase maintenance frequency and costs, and affect the long-term stable operation of the system.

[0007] In the process of recovering the solution above the guide plate, the opening size of the diversion pipe cannot be adjusted accordingly, which reduces the precision of the solution recovery efficiency and recovery volume. When the recovery of one type of cleaning water is completed and subsequent recovery of another type of cleaning water is carried out, the existing technology cannot achieve the separation and sealing of the guide plate from the previous diversion pipe, or the sliding and locking of the guide plate to the subsequent diversion pipe, which reduces the precision and efficiency of the cleaning water recovery control.

[0008] Therefore, it is necessary to develop an epitaxial wafer cleaning water treatment device with features such as diversion and collection, sealing, residue prevention, and seal opening. Summary of the Invention

[0009] To address the above problems, the present invention provides an epitaxial wafer cleaning water treatment device and treatment method.

[0010] To achieve the above objectives, the present invention provides the following technical solution: an epitaxial wafer cleaning water treatment device, comprising a housing, and further comprising: A support plate is installed inside the housing, and a support frame is installed inside the support frame. An extension plate is installed inside the support frame. The flow splitting assembly is located inside the support plate and includes multiple flow splitting plates and flow splitting pipes formed between adjacent flow splitting plates. A guide plate is movably installed inside the flow splitting pipe. When different solutions are used to clean the epitaxial wafer, the different solutions enter different flow splitting pipes along the guide plate for collection and processing. The air-blocking assembly, located inside multiple flow channels, includes sliders and arc blocks. When a certain solution is used to clean the epitaxial wafer, the corresponding flow channel opens, while the remaining flow channels are blocked and kept closed by the sliders. When it is necessary to switch flow channels, the guide plate moves the next slider downward and opens the flow channel.

[0011] When this epitaxial wafer cleaning device is in operation, the epitaxial wafer is first installed on the support frame and the system's sealing is checked. After startup, the spray unit sprays different solutions sequentially for cleaning. The waste liquid after each solution reaction is collected by a dedicated collection component and precisely guided into the corresponding independent diversion pipe through a switchable diversion assembly, finally entering the independent chamber of the treatment tank. This strictly avoids mixing and contamination of different waste liquids. During the cleaning process, the device continuously shakes off residual droplets from the surface of the components through a unique vibration structure. After all cleaning steps are completed, the cleaned epitaxial wafer is removed and subjected to subsequent testing before a new wafer is replaced to begin the next round of operation.

[0012] Preferably, the cleaning water treatment device further includes: The processing tank, located on one side of the tank, is used to process different solutions collected from multiple branch pipes; The recovery pipe is located on the lower side of the diversion assembly. One end is connected to multiple diversion pipes, and the other end is connected to the treatment tank. It is used to transport the epitaxial wafer cleaning water collected by the diversion pipes to the treatment tank. The exhaust pipe is located above the recovery pipe. One end of the exhaust pipe is connected to multiple diversion pipes, and the other end is connected to the corresponding treatment tank. It is used to recover the upper layer of waste gas inside the diversion pipes. The spray section, located on the upper side of the epitaxial wafer, is used to spray different solutions onto the surface of the epitaxial wafer for cleaning.

[0013] Preferably, the splitter component further includes: Multiple sliding sleeves are located inside the support plate and connected to multiple diversion plates; The collection chamber is formed inside multiple sliding sleeves, with one end connected to multiple diversion pipes and the other end connected to a recovery pipe. It is used to store and collect the epitaxial wafer cleaning water collected by the diversion pipes. A rotating body is located on the outside of the support frame; multiple arrays are located on the outside of the rotating body, and multiple guide plates are connected to adjacent side walls by soft material, which is used to transport the epitaxial wafer cleaning water to the inside of the diversion pipe.

[0014] Preferably, the splitter component further includes: An arc-shaped plate, positioned on the upper side of the epitaxial wafer, is used to collect and transfer the solution that is flung away by centrifugal force generated by the rotation of the epitaxial wafer; A fixing block is placed between the guide plate and the arc plate to fix the arc plate and transmit the vibration generated by the guide plate to the arc plate.

[0015] Preferably, the splitter component further includes: An annular plate, positioned between the support frame and the side wall of the guide plate, is elastic and used to collect and transport the solution flowing outward from the epitaxial wafer; The push rod, located on the lower side of the sliding sleeve, is used to drive the entire flow divider assembly and air barrier assembly to move vertically.

[0016] Preferably, the air gap assembly further includes: An annular sleeve is positioned above multiple flow dividers, and a slider is positioned inside the annular sleeve to maintain the airtightness of the multiple flow dividers. The reset component, located inside the annular housing, provides power for the slider to reset.

[0017] Preferably, the air gap assembly further includes: Vibrating blocks, in multiple arrays, are set on the lower surface of the guide plate during the epitaxial wafer cleaning process; The support component, which is fixedly connected to the side wall of the slider and is in the shape of an "L", is used to drive the slider to move during the switching of different diversion pipes; A groove is set inside the support, and the inner wall of the groove matches and slides with the outer surface of the arc-shaped block, which is used to guide and limit the movement of the arc-shaped block.

[0018] Preferably, the arc-shaped block is disposed on the inner surface of the annular shell, and the vibration block matches the arc-shaped block. During the rotation and cleaning of the epitaxial wafer, the arc-shaped block and the vibration block cooperate to make the guide plate vibrate up and down. The height of the arc-shaped block is greater than the height of the support. When the slider drives the support to move downward to the maximum distance, the arc-shaped block extends upward along the groove and its height is greater than the height of the support. The vibration block separates from the arc-shaped block and the support.

[0019] A method for treating epitaxial wafer cleaning water, the method comprising the following steps using an epitaxial wafer cleaning water treatment device: S1. After the outer extension plate is installed, the flow divider and the flow divider pipe move upward as a whole. The flow divider drives the guide plate to rotate. The guide plate pushes the support and the slider to move downward, and the channel is opened. S2. The solution on the surface of the epitaxial wafer flows precisely into the first diversion pipe that has been opened through the inclined surface of the guide plate for recycling; S3. The guide plate generates continuous up-and-down vibration, which causes the solution to fall and accelerate its flow into the distribution pipe. When the solution volume increases, the distribution plate and the distribution pipe move upward, and the guide plate drives the slider to move downward and increases the opening area of ​​the distribution pipe. S4. When switching cleaning solutions, the flow divider plate and flow divider pipe move upward as a whole, the arc block moves upward and drives the flow guide plate to rotate, so that the flow guide plate separates from the support and the arc block. The slider moves upward quickly to re-seal the pipe. The flow guide plate contacts the support in the next flow divider pipe and pushes the slider downward to complete the channel switching. S5. After all cleaning steps are completed, the manifold and manifold pipes are moved down to their initial positions, all components return to their initial positions, all manifold pipe inlets are sealed, the device is restored to its initial sealed state, and the cleaned epitaxial wafer is removed.

[0020] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. The device has separate diversion pipes for collecting cleaning solutions of different properties, which physically isolates the mixing of various wastewaters during the collection stage. This fundamentally solves the problem of neutralization reaction, precipitation or generation of toxic gases after mixing different chemicals in the traditional single-pipe mode. This not only greatly improves the safety of the process and avoids secondary pollution, but also creates favorable conditions for subsequent wastewater treatment.

[0021] 2. Dynamic intelligent sealing of the diversion pipes is achieved through the air-barrier component. When a certain pipe is in working condition, the sliders in the other pipes will tightly seal the pipe inlet under the elastic force of the reset component, forming a reliable airtight isolation. This sealing mechanism effectively prevents volatile harmful gases generated during the cleaning process from entering the collection system through idle pipes, avoids unnecessary secondary reactions with the collected wastewater, and also eliminates cross-contamination of residual waste liquid between pipes.

[0022] 3. The device continuously generates high-frequency micro-vibrations through the guide plate. These vibrations are transmitted to all liquid contact surfaces, such as the arc plate and the guide sleeve, effectively shaking off residual droplets adhering to them. This automatic cleaning not only minimizes solution residue in the current cleaning step and prevents cross-contamination between residual liquid and subsequent solutions of different properties, ensuring the cleaning quality of the epitaxial wafer, but also avoids corrosion of components caused by long-term adhesion of corrosive solutions, significantly extending the service life of the equipment and reducing maintenance costs.

[0023] 4. The different wastewaters entering the treatment tank have a single composition, which allows subsequent treatment to adopt the most direct and efficient process for specific pollutants. There is no need to invest a large amount of additional reagents and carry out multi-stage purification for treating complex mixed wastewater. This not only significantly reduces the reagent costs and energy consumption of wastewater treatment, but also makes the recovery of valuable chemical components more feasible and economical, thereby improving the overall level of resource utilization. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a partial structural diagram of the epitaxial wafer of the present invention; Figure 3 This is a schematic diagram of a partial three-dimensional cross-sectional structure of the epitaxial wafer of the present invention; Figure 4 This is a schematic diagram of the three-dimensional structure of the portion of the present invention excluding the epitaxial wafer; Figure 5 This is a three-dimensional structural diagram of the flow divider and air barrier components of the present invention; Figure 6 This is a three-dimensional structural diagram of the flow divider and air barrier components of the present invention; Figure 7 This is a three-dimensional structural diagram of the air-barrier assembly of the present invention; Figure 8 This is a schematic diagram of the structure of the guide plate of the present invention; Figure 9 This is a schematic diagram of the structure of the arc-shaped block in this invention.

[0025] In the diagram: 1. Box body; 2. Support plate; 3. Extended plate; 4. Diversion assembly; 401. Sliding sleeve; 402. Collection chamber; 403. Diversion plate; 404. Diversion pipe; 405. Arc plate; 407. Guide plate; 409. Annular plate; 410. Push rod; 411. Fixed block; 412. Rotating body; 5. Air barrier assembly; 501. Annular sleeve; 502. Slider; 503. Reset component; 504. Arc block; 505. Support component; 506. Vibration block; 507. Slide groove; 6. Recovery pipe; 7. Spray section; 8. Treatment tank; 9. Support frame; 10. Air outlet pipe. Detailed Implementation

[0026] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0027] Example 1 Traditional epitaxial wafer cleaning water treatment devices have only one main pipeline for collecting cleaning water. All cleaning water from the solution reacting on the surface of the epitaxial wafer 3 flows directly into the treatment tank 8 through this pipeline. Since the cleaning of the epitaxial wafer 3 requires strict adherence to the solution usage sequence (e.g., etching with the first cleaning water, degreasing with the second cleaning water, and rinsing with pure water), the chemical properties of the cleaning water at different stages vary greatly. When the first and second cleaning waters are mixed, a neutralization reaction occurs, and the resulting salt precipitates may clog the pipeline or adhere to the inner wall of the treatment tank 8, affecting the normal operation of the equipment. When cleaning water containing oxidants is mixed with cleaning water containing reducing agents, toxic gases (such as chlorine and ammonia) may be produced, which pollutes the environment and threatens the safety of operators.

[0028] Meanwhile, the composition of the mixed cleaning water is complex, and a large amount of chemicals are required for multi-stage treatment to meet the standards, resulting in high treatment costs. In addition, traditional equipment lacks an effective cleaning water guiding structure, and some cleaning water may drip directly into other areas inside the equipment, causing equipment corrosion or secondary contamination of the epitaxial wafers.

[0029] like Figures 1 to 9 As shown, this invention addresses the shortcomings of traditional epitaxial wafer cleaning water treatment devices by designing an epitaxial wafer cleaning water treatment device, including a housing 1 and a support plate 2, which is disposed inside the housing 1 to provide a stable plane for each component. A support frame 9 is disposed inside the support frame 9, and an epitaxial wafer 3 is disposed inside the support frame 9. During the cleaning process of the epitaxial wafer 3, the support frame 9 drives the epitaxial wafer 3 to rotate.

[0030] The diversion assembly 4 is located inside the support plate 2 and includes multiple diversion plates 403 and diversion pipes 404 formed between adjacent diversion plates 403. A guide plate 407 is movably installed inside the diversion pipe 404. When different solutions are used to clean the epitaxial wafer 3, the different solutions are collected and treated through the different diversion pipes 404 formed between the multiple diversion plates 403, which isolates the mixing of various wastewaters during the collection stage. This solves the problem that in the traditional single-pipe mode, different chemicals will undergo neutralization reactions, produce precipitation, or generate toxic gases after mixing.

[0031] The gas barrier assembly 5, located inside multiple diversion pipes 404, includes a slider 502 and an arc-shaped block 504. When a certain solution is used to clean the epitaxial wafer 3, the corresponding diversion pipe 404 opens, while the remaining diversion pipes 404 are blocked and kept closed by the slider 502. This effectively prevents volatile harmful gases generated during the cleaning process from entering the collection system through idle pipes. At the same time, the arc-shaped block 504 drives the diversion assembly 4 to vibrate, which can effectively shake off residual droplets attached to it. This automatic cleaning not only minimizes solution residue in the current cleaning step and prevents cross-contamination between residual liquid and subsequent solutions of different properties, but also ensures the cleaning quality of the epitaxial wafer 3. When it is necessary to switch the diversion pipe 404, the guide plate 407 drives the next slider 502 to move downward and open the diversion pipe 404. This automatic switching of the diversion pipe 404 further improves the diversion and recovery efficiency.

[0032] The cleaning water treatment device also includes: a treatment tank 8, located on one side of the housing 1, for treating different solutions collected by multiple diversion pipes 404; a recovery pipe 6, located below the diversion assembly 4, with one end connected to multiple diversion pipes 404 and the other end connected to the corresponding treatment tank 8, for transporting the cleaning water collected by the diversion pipes 404 to the treatment tank 8; an exhaust pipe 10, located above the recovery pipe 6, with one end connected to multiple diversion pipes 404 and the other end connected to the corresponding treatment tank 8, for recovering the upper layer of exhaust gas inside the diversion pipes 404; and a spray section 7, located above the epitaxial wafer 3, for spraying different solutions onto the surface of the epitaxial wafer 3 to clean it.

[0033] The diversion assembly 4 also includes: a sliding sleeve 401, multiple of which are disposed inside the support plate 2 and connected to multiple diversion plates 403; a collection chamber 402, formed inside the multiple sliding sleeves 401, one end of which is connected to multiple diversion pipes 404 and the other end of which is connected to the recovery pipe 6, for storing and collecting the cleaning water collected by the diversion pipes 404; the recovery pipe 6 is provided with multiple pipes corresponding to different collection chambers 402 to prevent cross-contamination between different solutions.

[0034] A rotating body 412 is disposed on the outside of the support frame 9. Multiple guide plates 407 are arrayed on the outside of the rotating body 412. The adjacent sidewalls of the multiple guide plates 407 are connected by a soft material to transport the cleaning water into the interior of the diversion pipe 404. An arc-shaped plate 405 is disposed on the upper side of the epitaxial wafer 3 to collect and transport the solution that is thrown off by the centrifugal force generated by the rotation of the epitaxial wafer 3. An annular plate 409 is disposed between the support frame 9 and the sidewall of the guide plate 407 to collect and transport the solution flowing outward from the epitaxial wafer 3 and to receive the solution flowing downward along the surface of the epitaxial wafer 3 under the action of gravity.

[0035] Under the action of gravity, the water flows downward along the surface of the epitaxial sheet 3 and is completely intercepted by the annular sheet 409. It then flows along the inclined surface of the annular sheet 409 to the guide plate 407. The first type of cleaning water, which is thrown outward by the centrifugal force generated by the rotation of the epitaxial sheet 3, is intercepted by the arc plate 405. The cleaning water flows downward along the inner wall of the arc plate 405 and then flows to the guide plate 407. The fixing block 411 is set between the guide plate 407 and the arc plate 405 and is hinged to the guide plate 407. It is used to fix the arc plate 405 and transmit the vibration generated by the guide plate 407 to the arc plate 405.

[0036] The flow divider assembly 4 also includes a push rod 410, which is located on the lower side of the sliding sleeve 401 and is used to drive the entire flow divider assembly 4 and the air barrier assembly 5 to move vertically.

[0037] During use, the staff first conducts a visual inspection of the epitaxial wafer 3 to be cleaned. After confirming that there are no defects such as surface damage or edge cracks, the staff accurately installs the epitaxial wafer 3 to be cleaned onto the support frame 9. They then check whether the three diversion pipes 404 are unobstructed, whether the connection between the collection chamber 402 and the recovery pipe 6 is sealed, and whether the three independent processing chambers of the processing tank 8 are ready (e.g., adding neutralizing agent to the first chamber, preparing adsorbent material in the second chamber, and preparing chemical treatment in the third chamber).

[0038] The first type of solution nozzle group of the spraying unit 7 is activated, and the first type of solution is sprayed evenly onto the surface of the epitaxial wafer 3, where it reacts chemically with the metal ion impurities on the surface. The control unit drives the support frame 9 to rotate, and the rotation of the support frame 9 causes the epitaxial wafer 3 to rotate at a constant speed. Part of the solution sprayed onto the surface of the epitaxial wafer 3 flows from the center of the epitaxial wafer 3 to the annular plate 409 at the edge due to its own gravity and impact force, while the other part is thrown away due to the centrifugal force generated by the rotation of the epitaxial wafer 3.

[0039] The cleaning water, flowing due to its own gravity, flows downward along the surface of the epitaxial wafer 3 under the action of gravity and is completely intercepted by the annular plate 409. It then flows along the inclined surface of the annular plate 409 to the guide plate 407. The first type of cleaning water, which is thrown outward by the centrifugal force generated by the rotation of the epitaxial wafer 3, is intercepted by the arc plate 405. The cleaning water flows downward along the inner wall of the arc plate 405 and then flows to the guide plate 407.

[0040] Under the influence of gravity and centrifugal force, the first type of cleaning water on the guide plate 407 flows precisely into the first diversion pipe 404 (corresponding to the pipe of the first type of solution) through the inclined surface of the guide plate 407. The first type of cleaning water flows into the corresponding area of ​​the collection chamber 402 through the first diversion pipe 404, and then is transported to the first type of cleaning water treatment chamber of the treatment tank 8 through the recovery pipe 6 for targeted treatment such as neutralization and filtration.

[0041] After the first solution cleaning is completed, the first nozzle group is turned off, the pure water nozzle group is turned on, and pure water is sprayed onto the surface of the epitaxial wafer 3 to rinse the residual first solution and reaction products, and the above collection and processing steps are repeated.

[0042] After the pure water rinsing is completed, the pure water nozzle group of the spray section 7 is closed, the push rod 410 is started, the push rod 410 moves upward and drives the sliding sleeve 401 to move upward, the sliding sleeve 401 moves upward and drives the flow divider 403 and the flow divider pipe 404 to move upward, so that the guide plate 407 is aligned with the second flow divider pipe 404, and then the second type of solution nozzle group is started.

[0043] The second solution nozzle assembly is activated, and the second solution is sprayed onto the surface of the epitaxial wafer 3 to remove organic contaminants from the surface. The above-mentioned cleaning water flow and collection process is repeated: the gravity-type and centrifugal-type cleaning water are respectively received by the annular plate 409 and the arc-shaped plate 405, and guided by the guide plate 407 to the second diversion pipe 404 (corresponding to the pipe of the second solution); the second cleaning water flows into the independent area of ​​the collection chamber 402 through the second diversion pipe 404, and is then transported to the second cleaning water treatment chamber of the treatment tank 8 through the recovery pipe 6 for adsorption and degradation treatment.

[0044] After the second type of solution cleaning is completed, the second type of nozzle group is turned off, the pure water nozzle group is turned on, and pure water is sprayed onto the surface of epitaxial wafer 3 to rinse the residual second type of solution and reaction products, and the above collection and processing steps are repeated.

[0045] After rinsing with pure water, turn off the pure water nozzle group of the spray section 7, start the push rod 410 again, align the third diversion pipe 404 of the guide plate 407, and then start the third solution nozzle group. Repeat the above steps.

[0046] After the epitaxial wafer 3 is cleaned, remove the cleaned epitaxial wafer 3 and replace it with another epitaxial wafer 3 that needs to be cleaned. This completes the above steps.

[0047] Example 2 While Example 1 solved the core problem of solution mixing, it revealed new defects in practical applications. The diversion pipe 404 remained open throughout the entire cleaning process. Harmful gases generated during cleaning (such as hydrogen produced by the reaction of acidic solutions with metals, and ammonia produced by the reaction of alkaline solutions with organic matter) would enter the collection chamber 402 through the open diversion pipe 404, undergoing secondary reactions with the wastewater already stored in the collection chamber 402 (e.g., ammonia reacting with acidic wastewater to form salt precipitates, clogging the recovery pipe 6). Simultaneously, some solution would remain on the surfaces of the guide plate 407 and the arc-shaped plate 405. If these residual solutions... If not cleaned in time, the solution will mix with the new solution during the next cleaning, causing cross-contamination. Furthermore, long-term adhesion of the residual solution will corrode components. During the solution recovery process above the guide plate 407, the opening size of the diversion pipe 404 cannot be adjusted accordingly, thus reducing the precision of solution recovery efficiency and recovery volume. Moreover, when recovering one type of cleaning water and then proceeding with the recovery of another type, the above methods cannot achieve the proper separation and sealing of the guide plate 407 from the previous diversion pipe 404, nor can the guide plate 407 slide and engage with the subsequent diversion pipe 404, thereby reducing the precision and efficiency of cleaning water recovery control.

[0048] Based on this, Example 2 adds a sealing structure and vibration to remove residues, further optimizing the treatment effect.

[0049] The air gap assembly 5 also includes an annular housing 501, which is disposed above the multiple flow dividers 403; a slider 502 is disposed inside the annular housing 501 to maintain the airtightness of the multiple flow dividers 404; and a reset member 503 is disposed inside the annular housing 501 to provide power for the reset of the slider 502.

[0050] The air-barrier assembly 5 also includes: a vibrating block 506, multiple of which are arranged in an array on the lower surface of the guide plate 407. During the cleaning of the epitaxial wafer 3, the vibrating block 506 moves up and down on the surface of the arc-shaped block 504 and generates vibration. The arc-shaped block 504 is arranged on the inner surface of the slider 502 and is used to drive the guide plate 407 to move during the switching of different diversion pipes 404. At the same time, during the rotation cleaning of the epitaxial wafer 3, the arc-shaped block 504 and the vibrating block 506 cooperate to make the guide plate 407 vibrate up and down. The up and down vibration of the vibrating block 506 drives the guide plate 407 to vibrate. The vibration of the guide plate 407 drives the arc plate 405 to vibrate, so that the solution on the arc plate 405 and the guide plate 407 flows downward quickly to prevent residue.

[0051] The support member 505 is fixedly connected to the side wall of the slider 502 and is in the shape of an "L". It is used to drive the slider 502 to move during the switching of different diversion pipes 404. The slide groove 507 is set inside the support member 505 and is used to guide and limit the movement of the arc block 504.

[0052] The rotating body 412 can be a torsion spring structure. The upward movement of the diverter plate 403 drives the guide plate 407 to continue rotating around the rotating body 412. The rotating body 412 generates torque on the guide plate 407. The lower surface of the guide plate 407 contacts the support member 505. The torque of the guide plate 407 drives the support member 505 and the slider 502 to move downward against the force of the reset member 503 inside the annular sleeve 501.

[0053] The arc-shaped block 504 is disposed on the inner surface of the annular sleeve 501, and the vibrating block 506 matches the arc-shaped block 504. During the rotation and cleaning of the epitaxial wafer 3, the arc-shaped block 504 and the vibrating block 506 cooperate to cause the guide plate 407 to vibrate up and down. The height of the arc-shaped block 504 is greater than the height of the support member 505, that is, after the arc-shaped block 504 extends along the slide groove 507, its height is greater than that of the support member 505. When the slider 502 drives the support member 505 to move downward to the maximum distance, the arc-shaped block 504 extends upward along the slide groove 507 and its height is greater than that of the support member 505. At this point, the vibrating block 506 disengages from the arc-shaped block 504 and the support member 505. During use, after the installation of the epitaxial wafer 3 and the inspection of each component are completed, the sealing status is calibrated. Under the elastic force of the reset piece 503, the sliders 502 in all annular sleeves 501 abut against the lower surface of the corresponding diversion plate 403, completely blocking the inlet of the corresponding diversion pipe 404. The airtightness test confirms that there is no gas leakage.

[0054] When cleaning of the epitaxial wafer 3 is required, the push rod 410 is activated. The push rod 410 moves upward, causing the sliding sleeve 401 to move upward. The upward movement of the sliding sleeve 401 causes the flow divider plate 403 and the flow divider pipe 404 to move upward. The flow divider plate 403 first abuts against the lower surface of the guide plate 407. The flow divider plate 403 continues to move upward, causing the guide plate 407 to continue to rotate around the rotating body 412. The rotating body 412 generates torque on the guide plate 407. As the diverter plate 403 continues to move upward, the vibrating block 506 on the lower surface of the guide plate 407 contacts the support member 505. Under the action of torque, the vibrating block 506 below the guide plate 407 drives the support member 505 and the slider 502 to move downward against the force of the reset member 503 inside the annular sleeve 501. The guide plate 407 continues to move to the appropriate position. At this time, the inclined surface of the vibrating block 506 on its lower surface coincides with the side part of the arc block 504, and the push rod 410 stops moving.

[0055] At this time, the first type of nozzle group is activated, and the steps in Example 1 are performed. When the first type of solution cleans the epitaxial wafer 3, the slider 502 inside the remaining diversion pipe 404 is always in contact with the lower surface of the diversion plate 403 under the action of the reset member 503, completely blocking the inlet of the corresponding diversion pipe 404, maintaining the airtightness of the corresponding diversion pipe 404, and preventing harmful gases generated by the reaction between the first type of solution and the surface material of the epitaxial wafer 3 from entering.

[0056] Meanwhile, during the cleaning process of the solution on the surface of the epitaxial wafer 3, the epitaxial wafer 3 rotates under the drive of the support frame 9. The rotation of the support frame 9 drives the guide plate 407 to rotate. The rotation of the guide plate 407 drives the vibration block 506 on its lower surface to continuously contact and separate from the arc block 504. The vibration block 506 vibrates up and down, causing the guide plate 407 to vibrate. The vibration of the guide plate 407 drives the arc plate 405 to vibrate, so that the solution on the arc plate 405 and the guide plate 407 flows downward quickly, preventing residues on the sidewalls of the arc plate 405 and the guide plate 407 from causing contamination.

[0057] During the cleaning process of the epitaxial wafer 3 with the first solution, when the amount of solution on the guide plate 407 at a certain position increases, the guide plate 407 will rotate downward around the rotating body 412 under the action of the solution's own gravity. The rotation of the guide plate 407 will cause the slider 502 to move downward, thereby increasing the opening area of ​​the diversion pipe 404. At the same time, the rotation of the guide plate 407 will increase the contact area between the vibrating block 506 and the arc block 504, thereby increasing the vibration amplitude of the guide plate 407, so that the solution can flow quickly into the interior of the diversion pipe 404.

[0058] Furthermore, if the amount of solution sprayed from the spray section 7 increases, the weight of the solution above the guide plate 407 alone is insufficient to move the multiple sliders 502 downwards and open to a suitable height. In this case, the push rod 410 is activated and moves upwards, causing the sliding sleeve 401 to move upwards. The upward movement of the sliding sleeve 401 causes the annular sleeve 501 and sliders 502 to move upwards. At this time, under the torque of the rotating body 412, the guide plate 407 causes the sliders 502 to move downwards along the annular sleeve 501, pressing the reset piece 503. This increases the distance between the sliders 502 and the upper diversion plate 403, and increases the opening area of ​​the diversion pipe 404. This effectively avoids the situation where the opening area of ​​the diversion pipe 404 cannot meet the requirements when the amount of solution increases, resulting in some parts being difficult to recover and having low recovery efficiency.

[0059] When the amount of solution sprayed from the spray section 7 decreases, the corresponding push rod 410 is activated and moves downward. The push rod 410 drives the sliding sleeve 401 to move downward. The downward movement of the sliding sleeve 401 drives the annular sleeve 501 and the slider 502 to move downward. As a result, the pressure applied by the guide plate 407 to the slider 502 decreases. Under the elastic force of the reset member 503, the slider 502 moves upward along the annular sleeve 501. The distance between the slider 502 and the diversion plate 403 decreases, and the opening area of ​​the diversion pipe 404 decreases. This effectively prevents the solution or gas inside the diversion pipe 404 from flowing backward and causing pollution to the subsequent recycling due to the excessively large opening of the diversion pipe 404.

[0060] When the first cleaning solution has finished cleaning the epitaxial wafer 3 and it is time to switch to the second cleaning solution, the push rod 410 is activated. The push rod 410 moves upward, causing the sliding sleeve 401 to move upward. The upward movement of the sliding sleeve 401 causes the annular sleeve 501 and the slider 502 to move upward. The upward movement of the slider 502 causes the arc block 504 to move upward. The upward movement of the arc block 504 causes the guide plate 407 on it to rotate upward around the rotating body 412. As the arc block 504 moves upward with the annular sleeve 501, the guide plate 407 and the vibrating block 506 exert pressure on the slider 502 and the support... The force applied by the support member 505 continuously increases, causing the slider 502 and the support member 505 to move downward relative to the arc block 504. The arc block 504 moves upward along the slide groove 507, increasing the distance and applying an upward thrust to the vibrating block 506 and the guide plate 407. This causes the engagement size between the vibrating block 506 and the support member 505 to continuously decrease. Eventually, the guide plate 407 and the vibrating block 506 separate from the support member 505. Subsequently, the slider 502 returns to its initial position under the action of the reset member 503 and continues to abut against the lower surface of the diversion plate 403, maintaining the airtightness of the corresponding diversion pipe 404.

[0061] As the annular sleeve 501 and slider 502 continue to move upward, the guide plate 407 contacts the support member 505 inside the second diversion pipe 404. Simultaneously, the vibrating block 506 engages with the support member 505. After the slider 502 separates from the diversion plate 403, the guide plate 407 extends above the slider 502. The torque of the guide plate 407 drives the support member 505 and slider 502 to move downward against the force of the reset member 503 inside the annular sleeve 501. The guide plate 407 continues to move downward to a suitable position, at which point the inclined surface of the vibrating block 506 on its lower surface coincides with the side portion of the arc-shaped block 504. The support member 505 drives the slider 502 to move downward to a suitable height, the second diversion pipe 404 is opened to a suitable size, the push rod 410 stops moving, and then the second type of nozzle group is activated to perform the steps in Example 1. When the second type of solution cleans the epitaxial wafer 3, the slider 502 inside the other diversion pipes 404 is always in contact with the lower surface of the diversion plate 403 under the action of the reset member 503, completely blocking the inlet of the corresponding diversion pipe 404, maintaining the airtightness of the corresponding diversion pipe 404, and preventing harmful gases generated by the reaction between the second type of solution and the surface material of the epitaxial wafer 3 from entering.

[0062] When the second cleaning solution has finished cleaning the epitaxial wafer 3 and it is time to switch to the third cleaning solution, the push rod 410 is activated, and the above steps are repeated. After rinsing with all the cleaning solutions, the push rod 410 is activated first, and the sliding sleeve 401 is moved upward to the maximum distance. At this time, the guide plate 407 is disengaged from the lowermost slider 502 and the support 505. The lowermost slider 502 moves upward to the maximum distance under the elastic force of the support 505 and comes into contact with and seals with the lower part of the diverter plate 403. Then the push rod 410 is activated, and the sliding sleeve 401 is moved downward to the initial position. The sliding sleeve 401 moves multiple diverter plates 403 and diverter pipes 404 downward to the initial position. When the sliding sleeve 401 moves multiple diverter plates 403 downward, they are squeezed and disengaged from the upper part of the guide plate 407. The guide plate 407 moves continuously above the multiple diverter plates 403. During this process, the multiple diverter pipes 404 are in a sealed and closed state, thus effectively avoiding cross-contamination between the various cleaning solutions.

[0063] Example 3 A method for treating cleaning water from epitaxial wafers is also provided, comprising the following steps: S1. After installing the outer extension plate 3, the diversion plate 403 and the diversion pipe 404 move upward as a whole. The diversion plate 403 drives the guide plate 407 to rotate. The guide plate 407 pushes the support 505 and the slider 502 to move downward, and the channel is opened. S2, the solution on the surface of the epitaxial wafer 3 flows precisely into the first diversion pipe 404 that has been opened through the inclined surface of the guide plate 407 for recycling; S3. The guide plate 407 generates continuous up-and-down vibration, which causes the solution to fall and accelerate its flow into the diversion pipe 404. When the solution volume increases, the diversion plate 403 and the diversion pipe 404 move upward, and the guide plate 407 drives the slider 502 to move downward and increases the opening area of ​​the diversion pipe 404. S4. When switching the cleaning solution, the diversion plate 403 and the diversion pipe 404 move upward as a whole, the arc block 504 moves upward and drives the guide plate 407 to rotate, so that the guide plate 407 separates from the support 505 and the arc block 504, the slider 502 moves upward quickly to re-seal the pipe, the guide plate 407 contacts the support 505 in the next diversion pipe 404 and pushes the slider 502 downward, completing the channel switching; S5. After all cleaning steps are completed, the diversion plate 403 and diversion pipe 404 move downward to the initial position, each component returns to the initial position, all diversion pipe 404 inlets are blocked, the device returns to the initial sealed state, and the cleaned epitaxial sheet 3 is removed.

[0064] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0065] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. An epitaxial wafer cleaning water treatment device, comprising a housing (1), characterized in that, Also includes: A support plate (2) is set inside the box (1), and a support frame (9) is set inside the support frame (9). An extension plate (3) is set inside the support frame (9). The diversion assembly (4) is located inside the support plate (2) and includes multiple diversion plates (403) and diversion channels (404) formed between adjacent diversion plates (403). A guide plate (407) is movably arranged inside the diversion channel (404). When different solutions are used to clean the epitaxial wafer (3), the different solutions enter different diversion channels (404) along the guide plate (407) for collection and processing. The air-barrier assembly (5) is located inside multiple diversion channels (404) and includes a slider (502) and an arc block (504). When a certain solution is used to clean the epitaxial wafer (3), the corresponding diversion channel (404) opens, and the remaining diversion channels (404) are blocked and kept closed by the slider (502). When it is necessary to switch the diversion channel (404), the guide plate (407) drives the next slider (502) to move downward and open the diversion channel (404). The air barrier assembly (5) further includes: Multiple vibrating blocks (506) are arranged in an array on the lower surface of the guide plate (407); The support (505) is fixedly connected to the side wall of the slider (502) and is in the shape of an "L" to drive the slider (502) to move during the switching of different diversion pipes (404); A groove (507) is provided inside the support (505), and the inner wall of the groove (507) matches and slides with the outer surface of the arc block (504) to guide and limit the movement of the arc block (504).

2. The epitaxial wafer cleaning water treatment device according to claim 1, characterized in that, The cleaning water treatment device also includes: The processing tank (8) is located on one side of the box (1) and is used to process different solutions collected by multiple diversion pipes (404); The recovery pipe (6) is located on the lower side of the diversion assembly (4), with one end connected to multiple diversion pipes (404) and the other end connected to the corresponding processing tank (8), for conveying the epitaxial wafer cleaning water collected by the diversion pipe (404) to the processing tank (8); The exhaust pipe (10) is located above the recovery pipe (6). One end of the exhaust pipe (10) is connected to multiple diversion pipes (404), and the other end is connected to the corresponding treatment tank (8) for recovering the upper waste gas inside the diversion pipe (404). The spray section (7) is located on the upper side of the epitaxial wafer (3) and is used to spray different solutions onto the surface of the epitaxial wafer (3) to clean the epitaxial wafer (3).

3. The epitaxial wafer cleaning water treatment device according to claim 1, characterized in that, The splitter component (4) also includes: Multiple sliding sleeves (401) are disposed inside the support plate (2) and connected to multiple diverter plates (403); The collection chamber (402) is formed inside multiple sliding sleeves (401), one end of which is connected to multiple diversion pipes (404), and the other end is connected to the recovery pipe (6), for storing and collecting epitaxial wafer cleaning water collected by the diversion pipes (404); A rotating body (412) is located on the outside of the support frame (9); an array of multiple guide plates (407) is located on the outside of the rotating body (412), and the adjacent sidewalls of the multiple guide plates (407) are connected by a soft material to transport the epitaxial wafer cleaning water to the inside of the diversion pipe (404).

4. The epitaxial wafer cleaning water treatment device according to claim 3, characterized in that, The splitter component (4) also includes: An arc-shaped plate (405) is set on the upper side of the epitaxial wafer (3) to collect and transport the solution that is thrown away by the centrifugal force generated by the rotation of the epitaxial wafer (3); A fixing block (411) is set between the guide plate (407) and the arc plate (405) to fix the arc plate (405) and transmit the vibration generated by the guide plate (407) to the arc plate (405).

5. The epitaxial wafer cleaning water treatment device according to claim 4, characterized in that, The splitter component (4) also includes: An annular plate (409) is disposed between the support frame (9) and the side wall of the guide plate (407). It is elastic and is used to collect and transport the solution flowing outward from the epitaxial plate (3). A push rod (410) is located on the lower side of the sliding sleeve (401) and is used to drive the entire flow splitting assembly (4) and air barrier assembly (5) to move vertically.

6. The epitaxial wafer cleaning water treatment device according to claim 1, characterized in that, The air barrier assembly (5) further includes: An annular sleeve (501) is disposed above multiple flow dividers (403), and a slider (502) is disposed inside the annular sleeve (501) to maintain the airtightness of multiple flow dividers (404); The reset component (503) is disposed inside the annular sleeve (501) and is used to provide power for the reset of the slider (502).

7. The epitaxial wafer cleaning water treatment device according to claim 6, characterized in that, The arc-shaped block (504) is set on the inner surface of the annular shell (501), and the vibrating block (506) matches the arc-shaped block (504). During the rotation and cleaning of the epitaxial wafer (3), the arc-shaped block (504) and the vibrating block (506) cooperate to make the guide plate (407) vibrate up and down. The height of the arc-shaped block (504) is greater than the height of the support (505). When the slider (502) drives the support (505) to move downward to the maximum distance, the arc-shaped block (504) extends upward along the slide groove (507) and its height is greater than the height of the support (505). The vibrating block (506) separates from the arc-shaped block (504) and the support (505).

8. A method for treating epitaxial wafer cleaning water, wherein the method utilizes the epitaxial wafer cleaning water treatment apparatus as described in any one of claims 1 to 7 to treat the epitaxial wafer cleaning water, characterized in that, Includes the following steps: S1. After the epitaxial wafer (3) is installed, the diverter plate (403) and the diverter pipe (404) move upward as a whole. The diverter plate (403) drives the guide plate (407) to rotate. The guide plate (407) pushes the support (505) and the slider (502) to move downward, and the channel is opened. S2, The solution on the surface of the epitaxial wafer (3) is precisely fed into the first diversion pipe (404) that has been opened through the inclined surface of the guide plate (407) for recycling; S3. The guide plate (407) generates continuous up-and-down vibration, which causes the solution to fall and accelerate its flow into the diversion pipe (404). When the solution volume increases, the diversion plate (403) and the diversion pipe (404) move upward, and the guide plate (407) drives the slider (502) to move downward and increase the opening area of ​​the diversion pipe (404). S4. When switching the cleaning solution, the diversion plate (403) and diversion pipe (404) move upward as a whole, the arc block (504) moves upward and drives the guide plate (407) to rotate, so that the guide plate (407) separates from the support (505) and the arc block (504), the slider (502) moves upward quickly to re-seal the pipe, the guide plate (407) contacts the support (505) in the next diversion pipe (404) and pushes the slider (502) downward to complete the channel switching; S5. After all cleaning steps are completed, the diversion plate (403) and diversion pipe (404) move downward to the initial position, each component returns to the initial position, all diversion pipe (404) inlets are blocked, the device is restored to the initial sealed state, and the cleaned epitaxial sheet (3) is removed.

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