Auxiliary device for a perpendicular anisotropic tilted magnetic layer and method of manufacture

Abstract

The application provides an auxiliary device and a preparation method of a vertical anisotropic tilted magnetic layer, and belongs to the technical field of magnetic storage, and comprises a shielding unit, a first sputtering target gun, a second sputtering target gun, a moving slide rail, a fixed clamp, a substrate tray, a stepping motor and a controller. The shielding unit comprises a shielding plate, a connecting rod and a fixed buckle. The shielding unit is fixed on a gun rod of the first sputtering target gun through the fixed buckle. One end of the fixed buckle is connected with the connecting rod, and the other end of the connecting rod is connected with the shielding plate. The shielding plate is located between the gun rod of the first sputtering target gun and the substrate tray, and a hollow slit is arranged on the shielding plate in the direction of the substrate. The hollow slit is used for limiting the exit angle and the sputtering area of the sputtering particles from the first target material after the sputtering particles pass through the hollow slit. The stepping motor and the controller are connected with the moving slide rail. The application can prepare a large-area and uniform vertical anisotropic tilted magnetic layer.

Description

Technical Field

[0001] This invention belongs to the field of magnetic storage technology, and particularly relates to an auxiliary device and preparation method for a vertically anisotropic tilted magnetic layer. Background Technology

[0002] The statements in this section are merely background information related to the present invention and do not necessarily constitute prior art.

[0003] Spin-orbit torque-based magnetic memories (SOT-MRAM) possess advantages such as non-volatility, high durability, low power consumption, and compatibility with traditional microelectronic processes, demonstrating the potential to break through the bottlenecks in the development of traditional semiconductor memories and develop a new generation of non-volatile memories. Compared to SOT-MRAM based on in-plane anisotropic magnetic layers, SOT-MRAM based on vertical anisotropic magnetic layers exhibits higher integration density and stability. The vertical anisotropy of the magnetic layer mainly stems from the following mechanisms: heavy metal / ferromagnetic metal interface effects (such as Co / Pt multilayer films, Co / Pd multilayer films), crystal field anisotropy of L10 ordered alloys (such as CoPt, FePt), and strong spin-orbit coupling of rare earth atoms in rare earth-transition metal alloys (such as GdFe, CoTb).

[0004] To achieve deterministic magnetization reversal of SOT-driven materials with vertical anisotropic magnetic properties, it is usually necessary to apply an in-plane auxiliary magnetic field along the current direction. This has hindered the industrial application of SOT-MRAM. Therefore, how to achieve SOT-driven vertical magnetization reversal without the assistance of an external magnetic field is a technical problem that must be solved in the development of SOT-MRAM.

[0005] In existing technologies, the key to SOT-induced fieldless vertical magnetization reversal in heavy metal / magnetic layer heterojunctions lies in breaking the mirror inversion symmetry of the plane containing the current flow in the vertical direction (xz plane). It has been reported that SOT-driven fieldless magnetization reversal has been achieved through interlayer coupling, swap bias, wedge-shaped structure construction, competitive spin current, and tilted deposition. However, these methods typically face challenges such as difficulty in ensuring large-area uniformity of the magnetic structure, complex fabrication processes, unsuitability for tunnel junction processes, or difficulty in integration on silicon wafers, thus limiting the development of SOT-MRAM. Summary of the Invention

[0006] To overcome the shortcomings of the prior art, this invention proposes an auxiliary device and preparation method for a vertically anisotropic tilted magnetic layer, which can prepare a vertically anisotropic tilted magnetic thin film on a large-size substrate, ensuring the uniformity and consistency of thickness and magnetic properties, and exhibiting consistent test performance in SOT-induced vertical magnetization reversal without external magnetic field.

[0007] To achieve the above objectives, one or more embodiments of the present invention provide the following technical solutions: In a first aspect, the present invention discloses an auxiliary device for a vertically anisotropic tilted magnetic layer, comprising a shielding unit, a first sputtering target gun, other sputtering target guns, a moving slide rail, a fixing fixture, a substrate tray, a stepper motor, and a controller. The shielding unit includes a shielding plate, a connecting rod, and a fixing buckle; the shielding unit is fixed to the barrel of the first sputtering target gun by the fixing buckle, the fixing buckle is connected to one end of the connecting rod, and the other end of the connecting rod is connected to the shielding plate; the shielding plate is located between the barrel of the first sputtering target gun and the substrate tray, and the shielding plate has a hollow slit facing the substrate, the hollow slit is used to limit the exit angle and sputtering area of ​​sputtered particles from the first target material after passing through the hollow slit; the stepper motor and controller are connected to the moving slide rail.

[0008] In a further technical solution, the movable slide rail is a target gun movable slide rail or a tray movable slide rail; When the moving slide rail is a target gun moving slide rail, the first sputtering target gun is fixed on the target gun moving slide rail by a fixing clamp. The moving slide rail is parallel to the substrate tray plane. The fixing clamp is controlled to move along the target gun moving slide rail by a stepper motor and controller, and drives the first sputtering target gun rod and the shielding unit to move synchronously. When the moving slide rail is a tray moving slide rail, the substrate tray is fixed on the tray moving slide rail by a fixing clamp. The tray moving slide rail and the substrate tray plane are parallel to each other. The stepper motor and controller control the tray fixing clamp to move along the tray moving slide rail, and drive the substrate tray and the substrate to move synchronously.

[0009] In a further technical solution, the length of the slit on the shielding plate is greater than the length of the substrate, and the width of the slit on the shielding plate is less than the width of the substrate.

[0010] A further technical solution is to take the position closest to the midpoint of the first target material as the first position, the direction from the midpoint of the first target material to the first position as the first direction, and the angle between the first direction and the normal of the substrate surface as an acute angle greater than 20°.

[0011] In a further technical solution, the angle between the central axis of the first target material and the normal to the surface of the substrate is greater than or equal to 0° and less than or equal to 90°.

[0012] In a further technical solution, the first target material includes one of magnetic metal materials or heavy metal materials; the heavy metal material includes one or more alloys of Pt, Ta, W, and Pd; the magnetic metal material includes ferromagnetic metals or ferrimagnetic metals, including one or more of Fe, Co, Ni, FeNi, CoFeB, CoFe, CoPt, FePt, CoGd, FeGd, FeCoGd, CoTb, FeTb, FeCoTb, and SmCo5.

[0013] Secondly, this invention discloses a method for preparing a vertically anisotropic tilted magnetic layer, comprising: Based on magnetron sputtering technology, the vacuum chamber is evacuated to a suitable background vacuum, and then argon or other working gas at a certain pressure is introduced, and the first target material is ignited by an external power supply. When the moving slide rail is a target gun moving slide rail and the first target material is a heavy metal material, the first sputtering target gun rod is controlled to move along the moving slide rail by a stepper motor and controller, and the shielding unit moves synchronously, so that the particle beam generated by the first target material passes through the hollow slit and is deposited on the substrate surface, and scans from one end of the substrate to the other end, keeping the substrate stationary, to obtain a textured and large-area uniform heavy metal layer; a magnetic metal thin film is uniformly deposited on the heavy metal layer, and the substrate tray is kept rotating during the deposition process to obtain a large-area and uniform vertically anisotropic magnetic thin film.

[0014] When the moving slide rail is the target gun moving slide rail and the first target material is a magnetic metal material, by controlling the first sputtering target gun rod to move along the moving slide rail, a magnetic metal film with tilted deposition is obtained, resulting in a large-area and uniform magnetic film with vertical anisotropy tilt. or; When the moving slide rail is a tray moving slide rail and the first target material is a heavy metal material, the shielding unit is kept stationary, and the tray is controlled to move along the moving slide rail by the stepper motor and controller, so that the particle beam generated by the first target material passes through the hollow slit and is deposited on the substrate surface, and scanned from one end of the substrate to the other end to obtain a textured and large-area uniform heavy metal layer; a magnetic metal film is uniformly deposited on the heavy metal layer, and the substrate tray is kept rotating during the deposition process to obtain a large-area and uniform vertically anisotropic magnetic layer; When the moving slide rail is a tray moving slide rail and the first target material is a magnetic metal material, by controlling the sample tray to move along the moving slide rail and using the first sputtering target gun to tilt and deposit a magnetic metal thin film, a large-area and uniform vertically anisotropic magnetic layer is obtained.

[0015] A further technical solution is to control the thickness of the tilted deposited film by changing the sputtering power and the movement speed of the tray along the slide rail or the target gun along the slide rail.

[0016] A further technical solution involves repeatedly sputtering the heavy metal layer and the magnetic layer alternately to obtain a large-area and uniform magnetic layer with vertical anisotropy.

[0017] In a further technical solution, the magnetic metal film is directly used as a large-area and uniform magnetic layer with vertical anisotropy tilt. or; The magnetic metal film is uniformly deposited on both the upper and lower sides to obtain a large-area and uniform magnetic layer with vertical anisotropy.

[0018] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention provides a method for fabricating a vertically anisotropic tilted magnetic layer, which enables controllable tilting of the vertical easy magnetization axis on large-size substrates, ensuring the uniformity and consistency of film thickness and magnetic properties. After patterning using micro-nano fabrication techniques such as photolithography and argon etching, this magnetic layer can achieve vertical magnetization reversal driven by spin orbital moment without the need for an external magnetic field, providing a solution for the industrial development and integration of large-scale spintronic devices on large-size substrates.

[0019] Advantages of additional aspects of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0020] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an improper limitation of the invention.

[0021] Figure 1 This is a schematic diagram illustrating an implementation of the auxiliary device described in Embodiment 1 of the present invention.

[0022] Figure 2 This is a schematic diagram of an implementation of the auxiliary device when α is an acute angle, as described in Embodiment 1 of the present invention.

[0023] Figure 3 This is a schematic diagram of an implementation of the auxiliary device for inverting the substrate tray as described in Embodiment 1 of the present invention.

[0024] Figure 4 This is a schematic diagram of an implementation of the auxiliary device described in Embodiment 3 of the present invention. Detailed Implementation

[0025] It should be noted that the following detailed descriptions are exemplary and intended to provide further illustration of the invention. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0026] It should be noted that the terminology used herein is for the purpose of describing particular implementations only and is not intended to limit the exemplary implementations of the present invention.

[0027] Where there is no conflict, the embodiments and features in the embodiments of the present invention can be combined with each other.

[0028] Example 1 In one or more embodiments, an auxiliary device for a vertically anisotropic tilted magnetic layer is disclosed, such as Figure 1 As shown, it includes a substrate 101, a substrate tray 10, a shielding unit 20, a first sputtering target gun 30, a moving slide rail 50, a fixing fixture 51, a stepper motor and controller 60, a first baffle 71, a second baffle 72, a second sputtering target gun 80, a first target material 301, a second target material 81, and a vacuum chamber 100.

[0029] In one implementation, the movable slide rail 50 can be a target gun movable slide rail. It should be understood that the movable slide rail can also be in other forms, which will be described in detail in subsequent embodiments. This embodiment describes a target gun movable slide rail; the first sputtering target gun 30 is fixed on the target gun movable slide rail 50 by a fixing clamp 51. The stepper motor and controller 60 are connected to the target gun movable slide rail 50. The stepper motor and controller 60 control the fixing clamp 51 to move along the target gun movable slide rail 50, and drive the first sputtering target gun 30 and the shielding unit 20 to move synchronously; the target gun movable slide rail 50 is parallel to the surface of the substrate tray 10.

[0030] In this embodiment, the first sputtering target gun 30 is equipped with the first target material 301; the shielding unit 20 includes a shielding plate 210, a connecting rod 220, and a fixing buckle 230; the shielding unit 20 is fixed to the first sputtering target gun 30 by the fixing buckle 230, and the two ends of the connecting rod 220 are respectively connected to the fixing buckle 230 and the shielding plate 210; the shielding plate 210 is located between the first sputtering target gun 30 and the substrate tray 10, and a hollow slit 240 is designed on the shielding plate (e.g., Figure 1 The dashed box in the middle is intended to limit the ejection angle and sputtering area of ​​sputtered particles from the first target 301 after passing through the hollow slit 240; a coordinate system is established with the surface of the substrate 101 as the xy plane, and the z-axis of the coordinate system is perpendicular to the xy plane; It should be understood that the vacuum chamber 100 is connected to components such as a vacuum system (not shown), an argon gas inlet device, a control system, and circuits, and is capable of completing the basic steps in the magnetron sputtering coating process, including: evacuating and depressurizing the chamber, introducing working gases such as argon and oxygen, and powering the target to control its ignition. When the sputtering target is not working, the first baffle 71 or the second baffle 72 is kept closed to prevent contamination of the target material. The vacuum chamber 100 can be connected to other vacuum chambers (not shown) for the transfer of the substrate 101. In addition to the first sputtering target gun, the vacuum chamber 100 also includes a second sputtering target gun 80 and several other sputtering target guns (not shown) for preparing multilayer films to induce or enhance the vertical anisotropy of the magnetic layer. Tilting sputtering is divided into sputtering magnetic metal layers and heavy metal layers. In addition, other targets are usually required to uniformly prepare other thin films to induce the vertical anisotropy of the magnetic layer in the multilayer film structure and tilt it.

[0031] As one implementation, the geometry of the shield 210 is not limited, including: a planar rectangular thin plate, a square thin plate, a trapezoidal thin plate, a circular thin plate, an elliptical thin plate, a triangular thin plate, other polygonal or irregular shaped thin plates, and also includes arc-shaped shields, cylindrical shields, barrel-shaped shields, etc.

[0032] In one implementation, the length of the slit 240 on the shielding plate 210 (the maximum dimension perpendicular to the moving direction of the first sputtering target) is greater than the length of the substrate 101, and the width of the slit 240 on the shielding plate 210 (the maximum dimension parallel to the moving direction of the first sputtering target) is less than the width of the substrate 101. If the slit length is less than the substrate, the edge of the shielded substrate will not be able to grow a thin film; if the width is too large, the deposition angle will be too divergent. In this embodiment, the slit is used to limit the angle and area of ​​the particle beam deposition on the substrate, so that the particle beam can scan the substrate uniformly at the same angle, thereby ensuring that the thickness and tilt angle of the tilted deposited thin film on the substrate are uniform.

[0033] As one implementation, the geometry of the cutout slit 240 on the shield 210 is not limited, including: rectangle, square, trapezoid, circle, ellipse, triangle, other polygons or irregular shapes.

[0034] As one implementation, the closest position of the hollow slit 240 to the midpoint of the first target 301 is taken as the first position, the direction from the midpoint of the first target 301 to the first position is taken as the first direction, and the angle θ between the first direction and the normal of the substrate surface is an acute angle greater than 20°.

[0035] As one implementation, the geometry of the first target 301 is not limited, including: rectangle, circle, ellipse, square, etc.

[0036] In one implementation, the moving direction of the first sputtering target gun 30, i.e. the target gun moving slide rail 50, needs to be parallel to the surface of the substrate 101, including but not limited to: the +y axis direction, the -y axis direction, the +x axis direction, and the -x axis direction.

[0037] In one implementation, the angle α between the central axis of the first target 301 and the normal to the surface of the substrate 101 is greater than or equal to 0° and less than or equal to 90°. Figure 2 As shown, when α is an acute angle, an inclined anisotropic magnetic layer is prepared using a magnetron sputtering auxiliary device. Therefore, this invention is also applicable to some target guns where the gun barrel is not parallel to the substrate, and it is also applicable even if the target gun is perpendicular to the substrate.

[0038] In one embodiment, the substrate tray 10 and the substrate 101 are not limited to the bottom of the vacuum cavity 100, such as... Figure 3 As shown, the substrate tray 10 is placed upside down on top of the vacuum chamber 100. The substrate 101 is fixed to the surface of the substrate tray 10 with clips, the baffle plate 210 is located between the substrate 101 and the first target 301, and the second sputtering target gun 80 is installed at the bottom of the vacuum chamber 100.

[0039] In one embodiment, the first target 301 comprises a magnetic metal material or a heavy metal material; in order to induce or enhance the vertical anisotropy of the magnetic layer, when the first target 301 is a heavy metal, the second target 81 is a magnetic metal material, and when the first target 301 is a magnetic metal, the second target can be a heavy metal material; wherein the magnetic metal material comprises ferromagnetic metal or ferrimagnetic metal, including one or more of Fe, Co, Ni, FeNi, CoFeB, CoFe, CoPt, FePt, CoGd, FeGd, FeCoGd, CoTb, FeTb, FeCoTb, and SmCo5; the heavy metal material comprises one or more alloys of Pt, Ta, W, and Pd.

[0040] In one implementation, during the thin film tilting deposition process, at the starting and ending points of the movement of the shielding unit 20 along the target gun moving slide rail 50, the particle beam 01 from the first target material 301 will not be deposited on the surface of the substrate 101. It should be understood that in order to ensure the consistency of tilting sputtering conditions for each part of the substrate, the substrate must be allowed to appear and disappear completely within the sputtering particle beam irradiation range.

[0041] Example 2 In one or more embodiments, a method for preparing a vertically anisotropic tilted magnetic layer is disclosed. Using the auxiliary device for preparing a vertically anisotropic tilted magnetic layer proposed in Example 1, a large-area uniform tilted anisotropic magnetic layer is deposited. The specific steps are as follows: The vacuum chamber 100 is evacuated to a suitable background vacuum, and then argon or other working gas at a certain pressure is introduced. The first target material 301 is then ignited using an external power supply.

[0042] When the first target material 301 is a heavy metal material, the first sputtering target gun rod 30 is controlled by the stepper motor and controller 60 to move horizontally along the moving slide rail 50, and the shielding unit 20 moves synchronously, so that the particle beam 01 generated by the first target material 301 passes through the hollow slit 240 and is deposited on the surface of the substrate 101, and scans from one end of the substrate 101 to the other end. During this process, the substrate 101 is kept stationary, thereby obtaining a heavy metal layer with a tilted texture. Then, the second sputtering target gun 80 is used to uniformly deposit a magnetic metal film without the need for the magnetron sputtering auxiliary device. During the deposition process, the substrate tray 10 is kept rotating. The tilted crystal texture of the heavy metal layer induces the magnetic metal layer to tilt perpendicular to the easy magnetization axis, thereby obtaining a large-area and uniform magnetic layer with a vertical anisotropic tilt.

[0043] When the first target 301 is a magnetic metal material, the deposition method described above controls the first sputtering target gun rod to move along the sliding rail, thereby controlling the first sputtering target 301 to achieve large-area tilted deposition of the magnetic thin film. To induce or enhance the vertical anisotropy of the magnetic layer, the second sputtering target gun 80 can be used to uniformly deposit a heavy metal film at the bottom or top of the magnetic thin film, thus obtaining a large-area and uniform vertically anisotropic tilted magnetic layer. It should be understood that heavy metal films on the top and bottom sides of the magnetic thin film are not necessarily required; this must be determined based on the type of magnetic material. Adding or not adding a heavy metal layer can yield different types of vertically anisotropic tilted magnetic layers.

[0044] Example 3 In one or more embodiments, an auxiliary device for a vertically anisotropic tilted magnetic layer is disclosed, such as Figure 4 As shown, it includes a movable slide rail 50, a fixing clamp 51, a shielding unit 20, a stepper motor and a controller 60; wherein, the shielding unit 20 includes a shielding plate 210, a connecting rod 220 and a fixing buckle 230; in addition, similar to the auxiliary device described in Embodiment 1, it also includes a first sputtering target gun 30, a first target material 301, a first baffle 71, a substrate tray 10, a substrate 101, a second sputtering target gun 80, a second target material 81, a second baffle 72, and a vacuum chamber 100.

[0045] In this embodiment, the movable slide rail 50 is a tray movable slide rail. The substrate tray 10 is fixed on the movable slide rail 50 by the fixing clamp 51. The stepper motor and controller 60 are connected to the tray movable slide rail 50. The stepper motor and controller 60 control the fixing clamp 51 to move along the tray movable slide rail 50, and drive the substrate tray 10 to move synchronously. The surfaces of the tray movable slide rail 50 and the substrate tray 10 are parallel to each other. A coordinate system is established using the surface of the substrate 101 as the xy plane, and the z-axis of the coordinate system is perpendicular to the xy plane. Furthermore, it should be understood that the vacuum chamber 100 is connected to components such as a vacuum system (not shown), an argon gas inlet device, a control system, and circuits, and is capable of completing the basic steps in the magnetron sputtering coating process, including: evacuating and depressurizing the chamber, introducing working gases such as argon and oxygen, and powering the target to start the sputtering process; when the sputtering target is not working, the first baffle 71 or the second baffle 72 is kept closed to prevent contamination of the target material; the vacuum chamber 100 can be connected to other vacuum chambers (not shown) for the transfer of the substrate 101; in addition to the first sputtering target gun, the vacuum chamber 100 also includes a second sputtering target gun 80 and several other sputtering target guns (not shown) for preparing multilayer films to induce or enhance the vertical anisotropy of the magnetic layer; In this embodiment, the shielding unit 20 is fixed to the first target gun rod 40 by a fixing buckle 230. The two ends of the connecting rod 220 are respectively connected to the fixing buckle 230 and the shielding plate 210. The shielding plate 210 is located between the first sputtering target gun 30 and the substrate tray 10. A hollow slit 240 is designed on the shielding plate (e.g., Figure 1 The dashed box in the middle is intended to limit the exit angle and sputtering area of ​​sputtered particles from the first target 301 after passing through the hollow slit 240.

[0046] In one embodiment, the moving direction of the substrate tray 10, that is, the direction of the moving slide rail 50, needs to be parallel to the surface of the substrate 101. The moving direction also includes, but is not limited to, the +y axis direction, the -y direction, the +x axis direction, and the -x axis direction.

[0047] In one embodiment, the positions of the substrate tray 10, substrate 101, and tray moving slide rail 50 are not limited to the bottom of the vacuum chamber 100, and can be installed upside down on the top of the vacuum chamber 100.

[0048] In one implementation, during the tilted deposition process, the particle beam O1 from the first target 301 will not deposit on the surface of the substrate 101 at the starting and ending points of the movement of the substrate tray 10 along the tray moving slide rail 50. To ensure the consistency of the tilted sputtering conditions for each part of the substrate, the substrate must be allowed to appear and disappear completely within the sputtering particle beam irradiation range.

[0049] Example 4 In one or more embodiments, a method for preparing a vertically anisotropic tilted magnetic layer is disclosed, utilizing the auxiliary device proposed in Example 3, and including the following steps: The vacuum chamber 100 is evacuated to a suitable background vacuum, and then argon or other working gas at a certain pressure is introduced. The first target material 301 is then ignited using an external power supply.

[0050] When the first target material 301 is a heavy metal material, the first sputtering target gun rod 30 is controlled by the stepper motor and controller 60 to move horizontally along the moving slide rail 50, and the shielding unit 20 moves synchronously, so that the particle beam 01 generated by the first target material 301 passes through the hollow slit 240 and is deposited on the surface of the substrate 101, and scans from one end of the substrate 101 to the other end. During this process, the substrate 101 is kept stationary, thereby obtaining a tilted textured heavy metal layer. Then, the second sputtering target gun 80 is used to uniformly deposit a magnetic metal film without the need for the magnetron sputtering auxiliary device. During the deposition process, the substrate tray 10 is kept rotating. The tilted textured heavy metal layer induces the tilting of the anisotropic axis of the magnetic metal layer, thereby obtaining a large-area and uniformly tilted anisotropic magnetic film.

[0051] When the first target 301 is a magnetic metal material, the first sputtering target 301 is controlled to achieve large-area tilted deposition of magnetic thin film by the above deposition method; in order to induce or enhance the vertical anisotropy of the magnetic layer, the second sputtering target gun 80 can be used to uniformly deposit heavy metal film at the bottom or top of the magnetic thin film, thereby obtaining a large-area and uniform vertically anisotropic tilted magnetic thin film.

[0052] The descriptions of each embodiment in the above embodiments have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0053] It should be noted that the shapes and sizes of the components in the figures do not reflect their actual size and proportions, but are only intended to illustrate the content of embodiments of the present invention.

[0054] It should also be noted that the directional terms mentioned in the embodiments, such as "up," "down," "+x-axis direction," "+y-axis direction," "-x-axis direction," "-y-axis direction," and "+z-axis direction," are only used for reference to the accompanying drawings and are not intended to limit the scope of protection of this invention. The terms "comprising" and "including" used herein are open-ended terms, meaning "including but not limited to," and do not exclude the presence of elements, materials, or preparation steps not listed in the claims.

[0055] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An auxiliary device for a vertically anisotropic tilted magnetic layer, characterized in that, It includes a shielding unit, a first sputtering target gun, other sputtering target guns, a moving slide rail, a fixing fixture, a substrate tray, a stepper motor, and a controller; The shielding unit includes a shielding plate, a connecting rod, and a fixing buckle; the shielding unit is fixed to the barrel of the first sputtering target gun by the fixing buckle, the fixing buckle is connected to one end of the connecting rod, and the other end of the connecting rod is connected to the shielding plate; the shielding plate is located between the barrel of the first sputtering target gun and the substrate tray, and the shielding plate has a hollow slit facing the substrate, the hollow slit is used to limit the exit angle and sputtering area of ​​sputtered particles from the first target material after passing through the hollow slit; the stepper motor and controller are connected to the moving slide rail; The movable slide rail is either a target gun movable slide rail or a tray movable slide rail; When the moving slide rail is a target gun moving slide rail, the first sputtering target gun is fixed on the target gun moving slide rail by a fixing clamp. The moving slide rail is parallel to the substrate tray plane. The fixing clamp is controlled to move along the target gun moving slide rail by a stepper motor and controller, and drives the first sputtering target gun rod and the shielding unit to move synchronously. When the moving slide rail is a tray moving slide rail, the substrate tray is fixed on the tray moving slide rail by a fixing clamp. The tray moving slide rail and the substrate tray plane are parallel to each other. The stepper motor and controller control the tray fixing clamp to move along the tray moving slide rail, and drive the substrate tray and the substrate to move synchronously.

2. The auxiliary device for a vertically anisotropic tilted magnetic layer as described in claim 1, characterized in that, The length of the slit in the shielding plate is greater than the length of the substrate, and the width of the slit in the shielding plate is less than the width of the substrate.

3. The auxiliary device for a vertically anisotropic tilted magnetic layer as described in claim 1, characterized in that, The position closest to the midpoint of the first target material in the hollowed-out slit is taken as the first position, the direction from the midpoint of the first target material to the first position is taken as the first direction, and the angle between the first direction and the normal of the substrate surface is an acute angle greater than 20°.

4. The auxiliary device for a vertically anisotropic tilted magnetic layer as described in claim 1, characterized in that, The angle between the central axis of the first target and the normal to the surface of the substrate is greater than or equal to 0° and less than or equal to 90°.

5. The auxiliary device for a vertically anisotropic tilted magnetic layer as described in claim 1, characterized in that, The first target material includes one of magnetic metal materials or heavy metal materials; the heavy metal material includes one or more alloys of Pt, Ta, W, and Pd; the magnetic metal material includes ferromagnetic metals or ferrimagnetic metals, including one or more of Fe, Co, Ni, FeNi, CoFeB, CoFe, CoPt, FePt, CoGd, FeGd, FeCoGd, CoTb, FeTb, FeCoTb, and SmCo5.

6. A method for preparing a vertically anisotropic tilted magnetic layer, comprising using an auxiliary device for preparing a vertically anisotropic tilted magnetic layer as described in any one of claims 1-5, characterized in that, include: Based on magnetron sputtering technology, the vacuum chamber is evacuated to a suitable background vacuum, and then argon or other working gas at a certain pressure is introduced, and the first target material is ignited by an external power supply. When the moving slide rail is a target gun moving slide rail, and the first target material is a heavy metal material, the first sputtering target gun rod is controlled to move along the moving slide rail by a stepper motor and controller, and the shielding unit moves synchronously, so that the particle beam generated by the first target material passes through the hollow slit and is deposited on the substrate surface, and scans from one end of the substrate to the other end, keeping the substrate stationary, to obtain a textured and large-area uniform heavy metal layer; a magnetic metal thin film is uniformly deposited on the heavy metal layer, and the substrate tray is kept rotating during the deposition process to obtain a large-area and uniform vertically anisotropic magnetic thin film; When the moving slide rail is the target gun moving slide rail and the first target material is a magnetic metal material, by controlling the first sputtering target gun rod to move along the moving slide rail, a magnetic metal film with tilted deposition is obtained, resulting in a large-area and uniform magnetic film with vertical anisotropy tilt. or; When the moving slide rail is a tray moving slide rail and the first target material is a heavy metal material, the shielding unit is kept stationary, and the tray is controlled to move along the moving slide rail by the stepper motor and controller, so that the particle beam generated by the first target material passes through the hollow slit and is deposited on the substrate surface, and scanned from one end of the substrate to the other end to obtain a textured and large-area uniform heavy metal layer; a magnetic metal film is uniformly deposited on the heavy metal layer, and the substrate tray is kept rotating during the deposition process to obtain a large-area and uniform vertically anisotropic magnetic layer; When the moving slide rail is a tray moving slide rail and the first target material is a magnetic metal material, by controlling the sample tray to move along the moving slide rail and using the first sputtering target gun to tilt and deposit a magnetic metal thin film, a large-area and uniform vertically anisotropic magnetic layer is obtained.

7. The method for preparing a vertically anisotropic tilted magnetic layer as described in claim 6, characterized in that, The thickness of the tilted deposited film can be controlled by changing the sputtering power and the movement rate of the tray along the slide rail or the target gun along the slide rail.

8. The method for preparing a vertically anisotropic tilted magnetic layer as described in claim 6, characterized in that, A large-area, uniform, vertically anisotropic magnetic layer is obtained by repeatedly sputtering the heavy metal layer and the magnetic layer alternately.

9. The method for preparing a vertically anisotropic tilted magnetic layer as described in claim 6, characterized in that, The magnetic metal film is directly used as a large-area and uniform vertically anisotropic magnetic layer. or; The magnetic metal film is uniformly deposited on both the upper and lower sides to obtain a large-area and uniform magnetic layer with vertical anisotropy.

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