High-purity germanium detector single crystal surface treatment method

Abstract

A method for surface treatment of a high-purity germanium detector single crystal includes the following steps: grinding and polishing the two opposite axial ends of a cylindrical high-purity germanium detector single crystal using a processing fluid prepared from SiO2 and water; measuring dimensions to calculate the volume; ultrasonic cleaning with pure water and methanol, followed by nitrogen drying; placing the crystal in a buffer bath, the buffer being prepared with 49% HF and 40% NH4F in a volume ratio of 1:(6-8), the volume ratio of the high-purity germanium detector single crystal to the buffer being 1:(2-5), and treating for 10 minutes. -30s, stir and roll; remove, rinse with pure water, and dry with nitrogen; place in the etching solution of the etching tank, which is placed in a pure water tank at 18-20℃, with the pure water and etching solution at the same level, and etch under water bath for 4-6 minutes. The etching solution is prepared by 49% HF and 30% H2O2 in a volume ratio of 1:(6-8). The volume ratio of the high-purity germanium detector single crystal to the etching solution is 1:(5-7). Stir and roll; add pure water until the reaction stops, then remove, rinse with pure water, dry with nitrogen, and observe under a microscope.

Description

Technical Field

[0001] This disclosure relates to the field of germanium crystals, and more specifically to a method for surface treatment of a single crystal of a high-purity germanium detector. Background Technology

[0002] High-purity germanium single crystals (i.e., 13N germanium single crystals) are the core material for manufacturing high-purity germanium detectors, and are widely used in nuclear physics, particle physics, astrophysics, nuclear safety, and national defense. During the fabrication of high-purity germanium detectors, it was discovered that poor surface treatment of the high-purity germanium single crystals (also known as high-purity germanium detector single crystals) can lead to defects, affecting the detector's performance, particularly its detection efficiency. Therefore, developing a surface treatment method for high-purity germanium crystals is necessary. Summary of the Invention

[0003] In view of the problems existing in the background art, one object of this disclosure is to provide a surface treatment method for a single crystal of a high-purity germanium detector, which can clean and smooth the end face of the single crystal of the high-purity germanium detector, so that the performance of the high-purity germanium detector will not be affected by the surface defects of the end face during the preparation of the high-purity germanium detector.

[0004] Therefore, a surface treatment method for a high-purity germanium detector single crystal includes the following steps: S1, grinding and polishing the two opposite axial ends of a cylindrical high-purity germanium detector single crystal using a processing fluid prepared with SiO2 and water to achieve a roughness of less than 5 nm; S2, measuring the dimensions of the polished high-purity germanium detector single crystal to calculate its volume; S3, ultrasonically cleaning the high-purity germanium detector single crystal with pure water and methanol, followed by nitrogen drying; S4, placing the nitrogen-dried high-purity germanium detector single crystal into a buffer solution in a buffer tank. The buffer solution is prepared with 49% HF and 40% NH4F in a volume ratio of 1:(6-8), and the volume ratio of the high-purity germanium detector single crystal to the buffer solution is 1:(2-5). The buffer solution treatment lasts for 10-30 seconds, with the high-purity germanium detector single crystal in contact with the bottom of the buffer tank on its circumferential surface. The high-purity germanium detector single crystal is agitated using a stirrer that does not react with the buffer solution to ensure that the high-purity germanium detector single crystal is in the buffer tank. S5: Roll the high-purity germanium detector single crystal at the bottom of the etching tank; S6: Remove the high-purity germanium detector single crystal after buffer treatment, rinse it with pure water, and then dry it with nitrogen; S7: Place the nitrogen-dried high-purity germanium detector single crystal into the etching solution of the etching tank, which is placed in a pure water tank at 18-20℃, with the pure water level equal to the etching solution level. Stir and roll the crystal under a water bath for 4-6 minutes. The etching solution is prepared by mixing 49% HF and 30% H2O2 in a volume ratio of 1:(6-8). The high-purity germanium detector single crystal and the etching solution... With a volume ratio of 1:(5-7), the high-purity germanium detector single crystal is placed in the etching tank with its circumferential surface in contact with the bottom of the etching tank. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the etching tank so that the high-purity germanium detector single crystal rolls on the bottom of the etching tank. S7, pure water is slowly added to the etching tank until the etching reaction stops. Then, the high-purity germanium detector single crystal is taken out, rinsed with pure water, dried with nitrogen, and finally the end face of the high-purity germanium detector single crystal is observed under a microscope.

[0005] The beneficial effects of this disclosure are as follows: In the method for surface treatment of a single crystal of a high-purity germanium detector according to this disclosure, the end face of the single crystal of the high-purity germanium detector can be treated to be clean and smooth through steps S1 to S7, so that the performance of the high-purity germanium detector will not be affected by surface defects of the end face when preparing the high-purity germanium detector. Attached Figure Description

[0006] Figure 1 This is a microscopic photograph of Comparative Example 1.

[0007] Figure 2 This is a microscopic photograph of Comparative Example 2.

[0008] Figure 3 This is a microscopic photograph of Comparative Example 3.

[0009] Figure 4 This is a microscope photograph of Example 1. Detailed Implementation

[0010] It will be understood that the disclosed embodiments are merely examples of this disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be construed as limiting, but are intended only as the basis for the claims and as an illustrative basis to teach those skilled in the art how to implement this disclosure in various ways.

[0011] [Single Crystal Surface Treatment Method for High-Purity Germanium Detectors]

[0012] The high-purity germanium detector single-crystal surface treatment method according to this disclosure includes the following steps:

[0013] S1. The two opposite ends of the cylindrical high-purity germanium detector single crystal are ground and polished using a processing fluid made of SiO2 and water to make the roughness less than 5nm.

[0014] S2, The dimensions of the polished high-purity germanium detector single crystal are measured to calculate the volume;

[0015] S3, the high-purity germanium detector single crystal after volume calculation is ultrasonically cleaned with pure water, ultrasonically cleaned with methanol, and then dried with nitrogen.

[0016] S4. After drying with nitrogen, the high-purity germanium detector single crystal is placed in the buffer solution of the buffer tank. The buffer solution is prepared by mixing 49% HF and 40% NH4F in a volume ratio of 1:(6-8). The volume ratio of the high-purity germanium detector single crystal to the buffer solution is 1:(2-5). The buffer solution is treated for 10-30 seconds. The high-purity germanium detector single crystal is placed in the buffer tank with its circumferential surface in contact with the bottom of the buffer tank. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the buffer solution so that the high-purity germanium detector single crystal rolls on the bottom of the buffer tank.

[0017] S5. Take out the high-purity germanium detector single crystal after buffer treatment, rinse it with pure water, and then blow it dry with nitrogen.

[0018] S6. Place the high-purity germanium detector single crystal, dried by nitrogen, into the etching solution in the etching tank. The etching tank is placed in a pure water tank at 18-20℃, with the pure water and etching solution at the same level. Stir and roll the crystal under water bath for 4-6 minutes. The etching solution is prepared by mixing 49% HF and 30% H2O2 in a volume ratio of 1:(6-8). The volume ratio of the high-purity germanium detector single crystal to the etching solution is 1:(5-7). The high-purity germanium detector single crystal contacts the bottom of the etching tank with its circumferential surface. Use a stirrer that does not react with the etching tank to stir the high-purity germanium detector single crystal so that it rolls on the bottom of the etching tank.

[0019] S7. Slowly add pure water to the etching tank until the etching reaction stops. Then, take out the high-purity germanium detector single crystal, rinse it with pure water, dry it with nitrogen, and finally observe the processing results of the end face of the high-purity germanium detector single crystal under a microscope.

[0020] In the high-purity germanium detector single crystal surface treatment method according to the present disclosure, the end face of the high-purity germanium detector single crystal can be cleaned and made smooth through steps S1 to S7, so that the performance of the high-purity germanium detector will not be affected by the surface defects of the end face when preparing the high-purity germanium detector.

[0021] In step S1, in one example, the grinding process is as follows: grinding is performed using a processing fluid prepared with pure water and SiO2 powder with a particle size of 100nm in a mass ratio of 1:(2-4) until the roughness is less than 50nm; the polishing process is as follows: polishing is performed using a processing fluid prepared with pure water and SiO2 powder with a particle size of 10nm in a mass ratio of 1:(2-4) until the roughness is less than 5nm.

[0022] The ultrasonic cleaning with pure water in step S3 removes impurities and most of the SiO2 particles adhering to the surface of the high-purity germanium detector single crystal during the grinding and polishing in step S1. The ultrasonic cleaning with methanol in step S3 removes organic matter adhering to the surface of the high-purity germanium detector single crystal. In one example, in step S3, the ultrasonic cleaning with pure water lasts for 8-12 minutes, and the ultrasonic cleaning with methanol lasts for 8-12 minutes.

[0023] The buffer solution in step S4 can dissolve and remove the SiO2 particles remaining on the surface of the high-purity germanium detector single crystal after step S3. Furthermore, the buffer solution will not damage the germanium. In one example, the stirrer in step S4 is a PE (polyethylene) rod or a PTFE (polytetrafluoroethylene) rod.

[0024] In step S5, in one example, the patient is rinsed with pure water for 8-12 minutes.

[0025] The etching process in step S6 uniformly and gently etches the surface (including the end face) of the high-purity germanium detector single crystal, resulting in a clean and smooth end face after etching. Furthermore, the amount of material removed by etching is minimized. In one example, the stirrer in step S6 is a PE rod or a PTFE rod.

[0026] In step S7, in one example, the patient is rinsed with pure water for 25-35 minutes.

[0027] [test]

[0028] Comparative Example 1

[0029] Comparative Example 1 uses the following steps:

[0030] Sa, the two opposite axial surfaces of the cylindrical high-purity germanium detector single crystal were ground and polished using a processing fluid prepared with SiO2 and water. The grinding process was as follows: SiO2 powder with a particle size of 100nm and processing fluid prepared with pure water in a mass ratio of 1:3 were ground until the roughness was less than 50nm. The polishing process was as follows: SiO2 powder with a particle size of 10nm and processing fluid prepared with pure water in a mass ratio of 1:3 were polished until the roughness was less than 5nm.

[0031] Sb, the dimensions of the polished high-purity germanium detector single crystal are measured to calculate the volume;

[0032] Sc, the high-purity germanium detector single crystal after volume calculation was ultrasonically cleaned with pure water for 10 min, ultrasonically cleaned with methanol for 10 min, and then dried with nitrogen.

[0033] Sd, a high-purity germanium detector single crystal dried by nitrogen gas is placed in the etching solution of the etching tank. The etching tank is placed in a pure water tank at 19°C, with the pure water and etching solution at the same level. The crystal is stirred and rolled for 5 minutes under water bath conditions. The etching solution is prepared by 71% nitric acid (HNO3) and 49% hydrofluoric acid (HF) in a volume ratio of 2:1. The volume ratio of the high-purity germanium detector single crystal to the etching solution is 1:6. The high-purity germanium detector single crystal contacts the bottom of the etching tank with its circumferential surface. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the etching tank so that the high-purity germanium detector single crystal rolls on the bottom of the etching tank. The stirrer is a PE rod.

[0034] Se, slowly add pure water into the etching tank until the etching reaction stops. Then, take out the high-purity germanium detector single crystal, rinse it with pure water for 30 minutes, then blow it dry with nitrogen gas, and finally observe the processing results of the end face of the high-purity germanium detector single crystal under a microscope.

[0035] Comparative Example 2

[0036] Comparative Example 2 uses the following steps:

[0037] The two opposite axial surfaces of the cylindrical high-purity germanium detector single crystal were ground and polished using a processing fluid prepared with SiO2 and water. The grinding process was as follows: SiO2 powder with a particle size of 100nm was ground with a processing fluid prepared with pure water at a mass ratio of 1:3 until the roughness was less than 50nm. The polishing process was as follows: SiO2 powder with a particle size of 10nm was polished with a processing fluid prepared with pure water at a mass ratio of 1:3 until the roughness was less than 5nm.

[0038] Sii, the dimensions of the polished high-purity germanium detector single crystal are measured to calculate the volume;

[0039] Siii, the high-purity germanium detector single crystal after volume calculation was ultrasonically cleaned with pure water for 10 min, ultrasonically cleaned with methanol for 10 min, and then dried with nitrogen.

[0040] Siv. A high-purity germanium detector single crystal, dried by nitrogen, is placed in the etching solution of an etching tank. The etching tank is placed in a pure water tank at 19°C, with the pure water level equal to the etching solution level. The crystal is etched under a water bath with stirring and rolling for 5 minutes. The etching solution is prepared by mixing 49% HF and 30% H2O2 in a volume ratio of 1:7. The volume ratio of the high-purity germanium detector single crystal to the etching solution is 1:6. The high-purity germanium detector single crystal is placed in the etching tank with its circumferential surface in contact with the bottom of the tank. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the etching tank, so that the high-purity germanium detector single crystal rolls on the bottom of the etching tank. The stirrer is a PE rod.

[0041] Sv. Slowly add pure water to the etching tank until the etching reaction stops. Then, take out the high-purity germanium detector single crystal, rinse it with pure water for 30 minutes, then blow it dry with nitrogen gas, and finally observe the processing results of the end face of the high-purity germanium detector single crystal under a microscope.

[0042] Comparative Example 3

[0043] Comparative Example 3 uses the following steps:

[0044] SI uses a processing fluid prepared with SiO2 and water to grind and polish the two opposite axial surfaces of a cylindrical high-purity germanium detector single crystal. The grinding process is as follows: grinding is carried out using a processing fluid prepared with pure water at a mass ratio of 1:3 for SiO2 powder with a particle size of 100nm, until the roughness is less than 50nm. The polishing process is as follows: polishing is carried out using a processing fluid prepared with pure water at a mass ratio of 1:3 for SiO2 powder with a particle size of 10nm, until the roughness is less than 5nm.

[0045] SII, the dimensions of the polished high-purity germanium detector single crystal are measured to calculate the volume;

[0046] SIII. The high-purity germanium detector single crystal after volume calculation was ultrasonically cleaned with pure water for 10 min, ultrasonically cleaned with methanol for 10 min, and then dried with nitrogen.

[0047] SIV: After being dried with nitrogen, the high-purity germanium detector single crystal is placed in the buffer solution of the buffer tank. The buffer solution is prepared by mixing 49% HF and 40% NH4F in a volume ratio of 1:7. The volume ratio of the high-purity germanium detector single crystal to the buffer solution is 1:4. The buffer solution is treated for 20 seconds. The high-purity germanium detector single crystal is placed in contact with the bottom of the buffer tank with its circumferential surface. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the buffer solution so that the high-purity germanium detector single crystal rolls on the bottom of the buffer tank. The stirrer is a PE rod.

[0048] SV, after the high-purity germanium detector single crystal was treated with buffer solution, it was taken out, rinsed with pure water for 10 minutes, and then dried with nitrogen gas;

[0049] In SVI, a high-purity germanium detector single crystal, dried by nitrogen, is placed in the etching solution of an etching tank. The etching tank is placed in a pure water bath at 19°C, with the pure water level equal to the etching solution level. The crystal is etched for 5 minutes under stirring and rolling conditions. The etching solution is prepared by mixing 71% nitric acid (HNO3) and 49% hydrofluoric acid (HF) in a volume ratio of 2:1. The volume ratio of the high-purity germanium detector single crystal to the etching solution is 1:6. The high-purity germanium detector single crystal contacts the bottom of the etching tank with its circumferential surface. A stirrer that does not react with the etching tank is used to agitate the high-purity germanium detector single crystal so that it rolls on the bottom of the etching tank. The stirrer is a PE rod.

[0050] SVII. Slowly add pure water to the etching tank until the etching reaction stops. Then, take out the high-purity germanium detector single crystal, rinse it with pure water for 30 minutes, then blow it dry with nitrogen gas, and finally observe the processing results of the end face of the high-purity germanium detector single crystal under a microscope.

[0051] Example 1

[0052] Example 1 uses the following steps:

[0053] S1. The two opposite axial surfaces of the cylindrical high-purity germanium detector single crystal are ground and polished using a processing fluid prepared with SiO2 and water. The grinding process is as follows: grinding is carried out using a processing fluid prepared with pure water and SiO2 powder with a particle size of 100nm in a mass ratio of 1:3 until the roughness is less than 50nm. The polishing process is as follows: polishing is carried out using a processing fluid prepared with pure water and SiO2 powder with a particle size of 10nm in a mass ratio of 1:3 until the roughness is less than 5nm.

[0054] S2, The dimensions of the polished high-purity germanium detector single crystal are measured to calculate the volume;

[0055] S3, the high-purity germanium detector single crystal after volume calculation is ultrasonically cleaned with pure water for 10 min, ultrasonically cleaned with methanol for 10 min, and then dried with nitrogen.

[0056] S4. After being dried with nitrogen, the high-purity germanium detector single crystal is placed in the buffer solution of the buffer tank. The buffer solution is prepared by mixing 49% HF and 40% NH4F in a volume ratio of 1:7. The volume ratio of the high-purity germanium detector single crystal to the buffer solution is 1:4. The buffer solution is treated for 20 seconds. The high-purity germanium detector single crystal is placed in contact with the bottom of the buffer tank with its circumferential surface. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the buffer solution so that the high-purity germanium detector single crystal rolls on the bottom of the buffer tank. The stirrer is a PE rod.

[0057] S5, take out the high-purity germanium detector single crystal after buffer treatment, rinse it with pure water for 10 minutes, and then blow it dry with nitrogen.

[0058] S6. The high-purity germanium detector single crystal, dried by nitrogen, is placed in the etching solution of the etching tank. The etching tank is placed in a pure water tank at 19°C, with the pure water and etching solution at the same level. The crystal is stirred and rolled under water bath for 5 minutes. The etching solution is prepared by mixing 49% HF and 30% H2O2 in a volume ratio of 1:7. The volume ratio of the high-purity germanium detector single crystal to the etching solution is 1:6. The high-purity germanium detector single crystal contacts the bottom of the etching tank with its circumferential surface. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the etching tank so that it rolls on the bottom of the etching tank. The stirrer is a PE rod.

[0059] S7. Slowly add pure water to the etching tank until the etching reaction stops. Then, take out the high-purity germanium detector single crystal, rinse it with pure water for 30 minutes, then blow it dry with nitrogen gas, and finally observe the processing results of the end face of the high-purity germanium detector single crystal under a microscope.

[0060] Figure 1 This is a microscopic photograph of Comparative Example 1. Figure 2 This is a microscopic photograph of Comparative Example 2. Figure 3 This is a microscopic photograph of Comparative Example 3. Figure 4 This is a microscope photograph of Example 1.

[0061] Comparison Figures 1 to 4 It can be seen that, corresponding to Example 1 Figure 4 The end face of the germanium detector single crystal is clean and smooth; corresponding to Comparative Examples 1-3 Figures 1 to 3 The end face of the germanium detector single crystal has many scattered small black spots / pits.

[0062] After high-purity germanium detector single crystals, following volume calculations, underwent ultrasonic cleaning with pure water and methanol, followed by nitrogen drying. Then, they were etched separately using an etching solution prepared with 71% nitric acid (HNO3) and 49% hydrofluoric acid (HF) in a 2:1 volume ratio (Comparative Example 1 and...). Figure 1 Corrosion was also carried out using a etchant prepared with 49% HF and 30% H2O2 in a volume ratio of 1:7 (Comparative Example 2 and 3). Figure 2 Before corrosion, the end face of the germanium detector single crystal will have SiO2 particles embedded in the end face. During the corrosion process, the SiO2 particles embedded in the end face cause uneven corrosion rate, and small black spots will appear at the location of the residual SiO2 particles.

[0063] After high-purity germanium detector single crystals, following volume calculations, underwent ultrasonic cleaning with pure water and methanol, followed by nitrogen drying. They were then etched using a buffer solution prepared with 49% HF and 40% NH4F at a volume ratio of 1:7, and further etched using an etchant solution prepared with 71% nitric acid (HNO3) and 49% hydrofluoric acid (HF) at a volume ratio of 2:1 (Comparative Example 3 and...). Figure 3 After etching, small pits appeared on the end face of the germanium detector single crystal, whereas in Example 1 ( Figure 4 The same buffer solution was used for treatment, but the etching solution was prepared with 49% HF and 30% H2O2 in a volume ratio of 1:7. After etching, the end face of the germanium detector single crystal was clean and smooth, without any... Figure 3 Small pits. The inventors infer that this difference between Comparative Example 3 and Example 1 may be due to the following reason: the SiO2 particles embedded at the embedded end face were dissolved and removed by buffer treatment before etching, in Comparative Example 3 (… Figure 3 In Example 1, after the SiO2 particles dissolve, they leave pits on the end face of the germanium detector single crystal. The etching solution prepared with 71% nitric acid (HNO3) and 49% hydrofluoric acid (HF) in a 2:1 volume ratio is not isotropic when etching these pits. As a result, the pits continue to extend with the etching solution until the etching is complete. Figure 4 The buffer solution treatment is the same, but the etching is done with an etching solution prepared by 49% HF and 30% H2O2 in a volume ratio of 1:7. This etching solution is isotropic when etching these pits, so the pits will not extend as they are etched by the etching solution and will be completely removed.

[0064] Several exemplary embodiments have been described in detail above, but this document is not intended to limit itself to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined to form several other combinations, which are not shown for simplicity.

Claims

1. A method for surface treatment of a single crystal in a high-purity germanium detector, characterized in that, Including the following steps: S1. The two opposite ends of the cylindrical high-purity germanium detector single crystal are ground and polished using a processing fluid made of SiO2 and water to make the roughness less than 5nm. S2, The dimensions of the polished high-purity germanium detector single crystal are measured to calculate the volume; S3, the high-purity germanium detector single crystal after volume calculation is ultrasonically cleaned with pure water, ultrasonically cleaned with methanol, and then dried with nitrogen. S4. After drying with nitrogen, the high-purity germanium detector single crystal is placed in the buffer solution of the buffer tank. The buffer solution is prepared by mixing 49% HF and 40% NH4F in a volume ratio of 1:(6-8). The volume ratio of the high-purity germanium detector single crystal to the buffer solution is 1:(2-5). The buffer solution is treated for 10-30 seconds. The high-purity germanium detector single crystal is placed in the buffer tank with its circumferential surface in contact with the bottom of the buffer tank. The high-purity germanium detector single crystal is stirred by a stirrer that does not react with the buffer solution so that the high-purity germanium detector single crystal rolls on the bottom of the buffer tank. S5. Take out the high-purity germanium detector single crystal after buffer treatment, rinse it with pure water, and then blow it dry with nitrogen. S6. Place the high-purity germanium detector single crystal, dried by nitrogen, into the etching solution in the etching tank. The etching tank is placed in a pure water tank at 18-20℃, with the pure water and etching solution at the same level. Stir and roll the crystal under water bath for 4-6 minutes. The etching solution is prepared by mixing 49% HF and 30% H2O2 in a volume ratio of 1:(6-8). The volume ratio of the high-purity germanium detector single crystal to the etching solution is 1:(5-7). The high-purity germanium detector single crystal contacts the bottom of the etching tank with its circumferential surface. Use a stirrer that does not react with the etching tank to stir the high-purity germanium detector single crystal so that it rolls on the bottom of the etching tank. S7. Slowly add pure water to the etching tank until the etching reaction stops. Then, take out the high-purity germanium detector single crystal, rinse it with pure water, dry it with nitrogen, and finally observe the processing results of the end face of the high-purity germanium detector single crystal under a microscope.

2. The method for treating the single crystal surface of a high-purity germanium detector according to claim 1, characterized in that, In step S1, The grinding process is as follows: using a processing fluid prepared with pure water and SiO2 powder with a particle size of 100nm in a mass ratio of 1:(2-4) to grind until the roughness is less than 50nm. The polishing process is as follows: a processing fluid with SiO2 powder of 10nm particle size and pure water in a mass ratio of 1:(2-4) is used for polishing until the roughness is less than 5nm.

3. The method for treating the single crystal surface of a high-purity germanium detector according to claim 1, characterized in that, In step S3, ultrasonic cleaning with pure water for 8-12 minutes and ultrasonic cleaning with methanol for 8-12 minutes are performed.

4. The method for treating the single crystal surface of a high-purity germanium detector according to claim 1, characterized in that, In step S4, the stirrer is a PE rod or a PTFE rod.

5. The method for treating the single crystal surface of a high-purity germanium detector according to claim 1, characterized in that, In step S5, rinse with pure water for 8-12 minutes.

6. The method for treating the single crystal surface of a high-purity germanium detector according to claim 1, characterized in that, In step S6, the stirrer is a PE rod or a PTFE rod.

7. The method for treating the single crystal surface of a high-purity germanium detector according to claim 1, characterized in that, In step S7, rinse with pure water for 25-35 minutes.

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