Transient modeling method for SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) switch in wide temperature range

Abstract

The invention belongs to the field of switch design, and particularly relates to a transient modeling method for a SiC MOSFET switch in a wide temperature range, which comprises the following steps of: determining temperature-related device parameters of the SiC MOSFET switch, and determining a relationship between each device parameter and the temperature; the method comprises the steps of determining the composition of parasitic capacitance, generating a fitting curve through a mathematical fitting mode, determining the relation between the parasitic capacitance and drain-source voltage, carrying out segmentation processing on a SiC MOSFET switch according to the switch between the parasitic capacitance and the drain-source voltage, and carrying out modeling at different stages. Through temperature parameter accurate characterization, stray capacitance dynamic combined modeling, multi-stage transient subdivision and engineering friendly design, the precision bottleneck of a traditional SiC MOSFET model in a wide temperature range and high dynamic scene is broken through, and a key technical support is provided for efficient design and reliable operation of a power electronic converter and industrial popularization of SiC devices; the influence of temperature on model parameters is considered, and the applicability of the model is improved.

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