A wireless communication device for satellite communications
By using a multilayer dielectric substrate lamination process and a metallized via structure for the ultra-wideband antenna design, integrating the radiating section and dual circular polarization circuit, the problems of wideband coverage and miniaturization of satellite communication antennas are solved. This enables dual circular polarization switching for transmission and reception, reducing product cost and size.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING BLUE TOWER OPTICAL TRANSMISSION INTELLIGENT TECHNOLOGY CO LTD
- Filing Date
- 2025-12-17
- Publication Date
- 2026-07-14
Smart Images
Figure CN121546322B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of wireless communication technology, and in particular to a wireless communication device for satellite communication. Background Technology
[0002] With the development of satellite communications, the technical requirements for antennas are constantly increasing. To meet the requirements for product miniaturization, it is necessary to combine the receiving and transmitting antennas into one, achieving both receiving and transmitting functions through a single antenna array. Therefore, higher requirements are placed on the operating bandwidth of the radiating antenna. Summary of the Invention
[0003] This application provides a wireless communication device for satellite communication, including: an ultra-wideband antenna;
[0004] The ultra-wideband antenna comprises, from top to bottom, a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, and a fifth dielectric substrate.
[0005] The upper surface of the first dielectric substrate is provided with a parasitic radiation patch, the lower surface of the second dielectric substrate is provided with a main radiation patch, the upper surface of the third dielectric substrate is provided with an L-probe feeding circuit, and the lower surface of the fourth dielectric substrate is provided with a 3dB bridge.
[0006] The 3dB bridge on the lower surface of the fourth dielectric substrate is electrically connected to an external power supply structure introduced from the lower surface of the fifth dielectric substrate through a first metallized via, thereby connecting the 3dB bridge to an external network.
[0007] The 3dB bridge on the lower surface of the fourth dielectric substrate is electrically connected to the L-probe feed circuit on the upper surface of the third dielectric substrate through a second metallized via, thereby connecting the 3dB bridge to the antenna radiating section.
[0008] Furthermore, a first metal ground is provided on the lower surface of the fifth dielectric substrate, and a second metal ground is provided on the upper surface of the fourth dielectric substrate. The first metal ground on the lower surface of the fifth dielectric substrate is electrically connected to the second metal ground on the upper surface of the fourth dielectric substrate through a third metallized via, thereby isolating the electromagnetic transmission energy of the 3dB bridge from the outside world.
[0009] Furthermore, a first metal isolation strip is provided on the upper surface of the first layer dielectric substrate, and the first metal isolation strip is disposed around the parasitic radiation patch in the edge region of the upper surface of the first layer dielectric substrate;
[0010] A second metal isolation strip is provided on the lower surface of the second layer dielectric substrate, and the second metal isolation strip is disposed around the edge region of the lower surface of the second layer dielectric substrate;
[0011] A third metal isolation strip is disposed on the upper surface of the third dielectric substrate, and the third metal isolation strip is disposed around the edge region of the upper surface of the third dielectric substrate surrounding the L-probe feeding circuit; and
[0012] A fourth metal isolation strip is provided on the lower surface of the fourth dielectric layer, and the fourth metal isolation strip is disposed around the edge region of the lower surface of the fourth dielectric layer, surrounding the 3dB bridge.
[0013] The first metal ground on the lower surface of the fifth dielectric substrate is electrically connected to the first metal isolation strip on the upper surface of the first dielectric substrate, the second metal isolation strip on the lower surface of the second dielectric substrate, the third metal isolation strip on the upper surface of the third dielectric substrate, and the fourth metal isolation strip on the lower surface of the fourth dielectric substrate through a fourth metallized via, thereby achieving isolation between the ultra-wideband antenna and adjacent antenna elements.
[0014] Furthermore, the thickness of the first dielectric layer, the second dielectric layer, and the third dielectric layer ranges from 0.6 to 0.9 mm, and the dielectric constant ranges from 3 to 4; the thickness of the fourth dielectric layer and the fifth dielectric layer ranges from 0.3 to 0.5 mm, and the dielectric constant ranges from 3 to 4.
[0015] Furthermore, the L-probe feeding circuit includes two orthogonally placed metal transmission lines. The radio frequency signal is coupled and transmitted to the main radiating patch through the L-probe feeding circuit and excites the parasitic radiating patch. The main radiating patch and the parasitic radiating patch form two resonant frequency points. The coupling feeding structure of the L-probe feeding circuit with the main radiating patch and the parasitic radiating patch forms a third resonant frequency point.
[0016] Furthermore, the size range of the main radiating patch is 5-7 mm;
[0017] The size range of the parasitic radiation patch is 5-7 mm;
[0018] The width of the two metal transmission lines in the L-probe feeding circuit ranges from 0.5 to 1.8 mm, and the length ranges from 1 to 3 mm.
[0019] Furthermore, the dielectric constants of the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer, and the fifth dielectric layer are all 3.4.
[0020] The thickness of the first dielectric substrate, the second dielectric substrate, and the third dielectric substrate is 0.75 mm, and the thickness of the fourth dielectric substrate and the fifth dielectric substrate is 0.4 mm.
[0021] The main radiating patch is an equilateral octagon with an inscribed circle diameter of 6 mm.
[0022] The parasitic radiation patch is circular with a diameter of 5.2 mm;
[0023] The two metal transmission lines in the L-probe feeding circuit are perpendicular to one edge of the main radiating patch. Each transmission line has a width of 0.8 mm and a length of 2.38 mm. In the thickness direction perpendicular to the third and fourth dielectric substrates, the length of the overlapping portion of the two metal transmission lines with the orthographic projection of the main radiating patch is 1.152 mm.
[0024] Furthermore, the 3dB bridge is a four-port circuit, wherein two output ports are connected to two orthogonally placed metal transmission lines in the L-probe feed circuit through a coaxial structure formed by metallized vias. After an RF signal is input from either of the two input ports, two RF signals are output from the two output ports to the L-probe feed circuit.
[0025] Furthermore, the first layer dielectric substrate, the second layer dielectric substrate, the third layer dielectric substrate, the fourth layer dielectric substrate, and the fifth layer dielectric substrate are all integrated by prepreg bonding.
[0026] Furthermore, the thickness of the prepreg between the first and second dielectric layers and the prepreg between the second and third dielectric layers is 0.2 mm, and the thickness of the prepreg between the third and fourth dielectric layers and the prepreg between the fourth and fifth dielectric layers is 0.1 mm. The prepreg between the first and second dielectric layers and the prepreg between the second and third dielectric layers are obtained by combining two prepreg layers with a standard thickness of 0.1 mm.
[0027] According to the above embodiments of this application, the radiating portion and the dual circular polarization circuit portion of the antenna are integrated together through a multilayer dielectric substrate lamination process. A coaxial structure is formed using metallized vias to achieve interlayer transmission of radio frequency signals. The radio frequency signals are coupled and transmitted between the dual circular polarization circuit and the antenna radiating patch via L-probes in the form of striplines. By adding a dielectric patch as a parasitic patch, a dual-layer patch microstrip antenna is formed. Thus, the relative operating bandwidth of the antenna element can reach 30%, covering the entire operating frequency band of both the transmitting and receiving antennas. Simultaneously, the dual circular polarization switching function for transmission and reception is achieved through a single unit, truly realizing a common-aperture design for both transmission and reception, effectively reducing the product's size and cost. Attached Figure Description
[0028] The accompanying drawings, which are part of the specification of this application, illustrate embodiments of the present application and are used together with the description of the specification to illustrate the principles of the present application.
[0029] Figure 1 A side view of an ultra-wideband antenna according to an embodiment of this application is shown.
[0030] Figure 2 A schematic diagram of the upper surface of the first layer dielectric substrate according to an embodiment of this application is shown.
[0031] Figure 3 A schematic diagram of the lower surface of the second layer dielectric substrate according to an embodiment of this application is shown.
[0032] Figure 4 A schematic diagram of the upper surface of the third layer dielectric substrate according to an embodiment of this application is shown.
[0033] Figure 5 A schematic diagram of the lower surface of the fourth layer dielectric substrate according to an embodiment of this application is shown.
[0034] Figure 6 A top perspective view of the entire ultra-wideband antenna according to an embodiment of this application is shown.
[0035] Figure 7 The simulated VSWR curve of an ultra-wideband antenna according to an embodiment of this application is shown.
[0036] Figure 8 The left-hand circular polarization gain curve of an ultra-wideband antenna according to an embodiment of this application is shown.
[0037] Figure 9 The right-hand circular polarization gain curve of an ultra-wideband antenna according to an embodiment of this application is shown. Detailed Implementation
[0038] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the spirit of the content disclosed in this application will be clearly explained below with reference to the accompanying drawings and detailed description. After understanding the embodiments of this application, any person skilled in the art can make changes and modifications based on the technology taught in this application without departing from the spirit and scope of this application.
[0039] The illustrative embodiments and descriptions provided in this application are for explaining the application, but are not intended to limit the application. Furthermore, elements / components using the same or similar reference numerals in the drawings and embodiments are used to represent the same or similar parts.
[0040] The terms “first,” “second,” etc., used in this document are not intended to specifically refer to order or sequence, nor are they used to limit this application; they are merely used to distinguish elements or operations described using the same technical terms.
[0041] The terms “include,” “including,” “have,” “contain,” etc., used in this article are all open-ended terms, meaning that they include but are not limited to.
[0042] The term "and / or" as used herein includes any or all of the things mentioned.
[0043] The term "multiple" in this article includes "two" and "more than two"; the term "multiple groups" in this article includes "two groups" and "more than two groups".
[0044] Certain terms used to describe this application will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the application.
[0045] With the development of satellite communication, the technical requirements for antennas are constantly increasing. Microstrip phased array antennas used for satellite communication typically have separate transmitting and receiving antenna arrays, operating in different circular polarization modes, with their respective relative bandwidths approaching 18%. Therefore, the transmitting and receiving antenna arrays occupy a large aperture, hindering product miniaturization. To meet the requirements of product miniaturization, it is necessary to combine the transmitting and receiving antenna arrays into one, achieving both receiving and transmitting functions through a single antenna array. However, traditional microstrip antennas typically have an operating bandwidth of only about 3%, far from meeting the wide frequency band coverage required for a combined transmitting and receiving microstrip antenna.
[0046] In the embodiments of this application, the device includes at least an ultra-wideband antenna.
[0047] This application provides a low-profile microstrip antenna for both transmitting and receiving, which has ultra-wide bandwidth and can simultaneously cover the transmitting and receiving frequency bands. Specifically, it can cover 10.7GHz-14.5GHz, spanning the X-Ku band, with a relative bandwidth of up to 30%, reaching the application field of ultra-wideband, reducing the area of the transmitting and receiving antennas, and realizing product miniaturization and low-cost product design.
[0048] Figure 1 A side view of an ultra-wideband antenna according to an embodiment of this application is shown. Figure 2 A schematic diagram of the upper surface of the first layer dielectric substrate is shown. Figure 3 A schematic diagram of the lower surface of the second-layer dielectric substrate is shown. Figure 4 A schematic diagram of the upper surface of the third layer dielectric substrate is shown. Figure 5 A schematic diagram of the lower surface of the fourth layer dielectric substrate is shown. Figure 6 A top perspective view of the entire ultra-wideband antenna is shown.
[0049] like Figure 1-6 As shown, the ultra-wideband antenna according to an embodiment of this application includes a first dielectric substrate 11, a second dielectric substrate 12, a third dielectric substrate 13, a fourth dielectric substrate 14, and a fifth dielectric substrate 15 arranged sequentially from top to bottom.
[0050] The upper surface of the first dielectric substrate is provided with a parasitic radiation patch 21, the lower surface of the second dielectric substrate is provided with a main radiation patch 22, the upper surface of the third dielectric substrate is provided with an L-probe feeding circuit 23, and the lower surface of the fourth dielectric substrate 14 is provided with a 3dB bridge 24.
[0051] The 3dB bridge 24 on the lower surface of the fourth dielectric substrate 14 is electrically connected to an external power supply structure introduced from the lower surface of the fifth dielectric substrate through a first metallized via 41, thereby connecting the 3dB bridge 24 to an external network. The external power supply structure can be an external coaxial power supply structure. The first metallized via 41 extends upwards from the lower surface of the fifth dielectric substrate 15 to the lower surface of the fourth dielectric substrate 14.
[0052] The 3dB bridge 24 on the lower surface of the fourth dielectric substrate 14 is electrically connected to the L-probe feed circuit 23 on the upper surface of the third dielectric substrate 13 through the second metallized via 42, thereby connecting the 3dB bridge 24 to the antenna radiating section. The second metallized via 42 extends upward from the lower surface of the fourth dielectric substrate 14 to the upper surface of the third dielectric substrate 13.
[0053] In one embodiment of this application, a first metal ground 31 is provided on the lower surface of the fifth dielectric substrate 15, and a second metal ground 32 is provided on the upper surface of the fourth dielectric substrate 14. The first metal ground 31 on the lower surface of the fifth dielectric substrate 15 is electrically connected to the second metal ground 32 on the upper surface of the fourth dielectric substrate 14 through a third metallized via 43, thereby isolating the electromagnetic transmission energy of the 3dB bridge 24 from the outside. The third metallized via 43 extends upward from the lower surface of the fifth dielectric substrate 15 to the upper surface of the fourth dielectric substrate 14. Specifically, as shown... Figure 6 As shown, in the direction perpendicular to each layer of dielectric substrate, several third metallized vias 43 can be arranged around the parasitic radiation patch 21, the main radiation patch 22, the L-probe power supply circuit 23 and the 3dB bridge 24 to achieve more comprehensive electromagnetic transmission energy isolation.
[0054] In one embodiment of this application, a first metal isolation strip 51 is provided on the upper surface of the first dielectric substrate 11, and the first metal isolation strip 51 is disposed around the parasitic radiation patch 21 in the edge region of the upper surface of the first dielectric substrate 11; a second metal isolation strip 52 is provided on the lower surface of the second dielectric substrate 12, and the second metal isolation strip 52 is disposed around the main radiation patch 22 in the edge region of the lower surface of the second dielectric substrate 12; a third metal isolation strip 53 is provided on the upper surface of the third dielectric substrate 13, and the third metal isolation strip 53 is disposed around the L-probe feeding circuit 23 in the edge region of the upper surface of the third dielectric substrate 13; and a fourth metal isolation strip 54 is provided on the lower surface of the fourth dielectric substrate 14, and the fourth metal isolation strip 54 is disposed around the 3dB bridge 24 in the edge region of the lower surface of the fourth dielectric substrate 14. The first metal ground 31 on the lower surface of the fifth dielectric substrate 15 is electrically connected to the first metal isolation strip 51 on the upper surface of the first dielectric substrate 11, the second metal isolation strip 52 on the lower surface of the second dielectric substrate 12, the third metal isolation strip 53 on the upper surface of the third dielectric substrate 13, and the fourth metal isolation strip 54 on the lower surface of the fourth dielectric substrate 14 via a fourth metallized via 44. The metal isolation strips can improve the isolation between adjacent antenna elements during antenna element arraying, achieving isolation between the ultra-wideband antenna and adjacent antenna elements. The fourth metallized via 44 extends upward from the lower surface of the fifth dielectric substrate 15 to the upper surface of the first dielectric substrate 11. Specifically, in one embodiment, the width of each metal isolation strip can be set to 0.4 mm, and each metal isolation strip is connected to each other through a ring of fourth metallized vias 44, the diameter of which can be set to 0.3 mm.
[0055] In one embodiment of this application, the materials of the first dielectric substrate 11, the second dielectric substrate 12, the third dielectric substrate 13, the fourth dielectric substrate 14, and the fifth dielectric substrate 15 can be high-frequency or high-speed materials, such as M6-R5755. Furthermore, the parasitic radiation patch 21 and the main radiation patch 22 can be made of metal, such as copper.
[0056] In one embodiment of this application, the thickness of the first dielectric substrate 11, the second dielectric substrate 12, and the third dielectric substrate 13 ranges from 0.6 to 0.9 mm, and the dielectric constant ranges from 3 to 4; the thickness of the fourth dielectric substrate 14 and the fifth dielectric substrate 15 ranges from 0.3 to 0.5 mm, and the dielectric constant ranges from 3 to 4.
[0057] In a specific embodiment of this application, the thickness of the first dielectric substrate 11 is 0.75 mm, the thickness of the second dielectric substrate 12 is 0.75 mm, the thickness of the third dielectric substrate 13 is 0.75 mm, the thickness of the fourth dielectric substrate 14 is 0.4 mm, and the thickness of the fifth dielectric substrate 15 is 0.4 mm. All dielectric substrates are made of M6-R5755 material with a dielectric constant of 3.4.
[0058] In one embodiment of this application, the first dielectric substrate 11, the second dielectric substrate 12, the third dielectric substrate 13, the fourth dielectric substrate 14, and the fifth dielectric substrate 15 are all dielectric substrates of equal size. The first dielectric substrate 11, the second dielectric substrate 12, the third dielectric substrate 13, the fourth dielectric substrate 14, and the fifth dielectric substrate 15 are all integrated by laminating prepregs. Specifically, as... Figure 1 As shown, the first dielectric substrate 11, the second dielectric substrate 12, the third dielectric substrate 13, the fourth dielectric substrate 14, and the fifth dielectric substrate 15 are respectively pressed together by the first semi-cured sheet 61, the second semi-cured sheet 62, the third semi-cured sheet 63, and the fourth semi-cured sheet 64. The first semi-cured sheet 61 is located between the first dielectric substrate 11 and the second dielectric substrate 12, the second semi-cured sheet 62 is located between the second dielectric substrate 12 and the third dielectric substrate 13, the third semi-cured sheet 63 is located between the third dielectric substrate 13 and the fourth dielectric substrate 14, and the fourth semi-cured sheet 64 is located between the fourth dielectric substrate 14 and the fifth dielectric substrate 15.
[0059] In the lamination process, the fourth layer dielectric board 14 and the fifth layer dielectric board 15 can be laminated once, and the first metallized via 41 and the third metallized via 43 can be processed by drilling, through-hole metallization and back drilling processes; then, they can be laminated a second time with the third layer dielectric board 13, and the second metallized via 42 can be processed; finally, they can be laminated a third time with the first layer dielectric board 11 and the second layer dielectric board 12, and the fourth metallized via 44 can be processed.
[0060] The thickness of the prepreg 61 between the first dielectric substrate 11 and the second dielectric substrate 12, and the prepreg 62 between the second dielectric substrate 12 and the third dielectric substrate 13, ranges from 0.15 to 0.25 mm. The thickness of the prepreg 63 between the third dielectric substrate 13 and the fourth dielectric substrate 14, and the prepreg 64 between the fourth dielectric substrate 14 and the fifth dielectric substrate 15, ranges from 0.05 to 0.15 mm.
[0061] In a specific embodiment of this application, the thickness of the prepreg 61 between the first dielectric substrate 11 and the second dielectric substrate 12, and the thickness of the prepreg 62 between the second dielectric substrate 12 and the third dielectric substrate 13, are 0.2 mm. The thickness of the prepreg 63 between the third dielectric substrate 13 and the fourth dielectric substrate 14, and the thickness of the prepreg 64 between the fourth dielectric substrate 14 and the fifth dielectric substrate 15, are 0.1 mm. The 0.2 mm thickness of the prepreg 61 between the first dielectric substrate 11 and the second dielectric substrate 12, and the prepreg 62 between the second dielectric substrate 12 and the third dielectric substrate 13, can be obtained by combining two standard 0.1 mm thick prepregs, replacing the traditional single standard 0.254 mm thick dielectric substrate used in antennas, thus reducing the number of dielectric substrate layers and lowering antenna costs.
[0062] In one embodiment of this application, both the main radiating patch 22 and the parasitic radiating patch 21 are located at the center of the antenna. The main radiating patch 22 and the parasitic radiating patch 21 can take various shapes, including but not limited to circular, square, and regular polygonal shapes. The L-probe feed circuit 23 includes two orthogonally placed metal transmission lines. The radio frequency signal is coupled and transmitted to the main radiating patch 22 through the L-probe feed circuit 23, simultaneously exciting the parasitic radiating patch 21. The two radiating patches form two resonant frequency points. The L-probe feed circuit 23 serves as the coupled feed structure for the parasitic radiating patch 21 and the main radiating patch 22, and together with the parasitic radiating patch 21 and the main radiating patch 22, constitutes a three-frequency resonant circuit. By adjusting the parameters of the L-probe feed circuit and the two radiating patches, the three resonant frequency points can be brought closer together, forming a three-frequency resonant circuit with a bandwidth broadening effect.
[0063] Specifically, by selecting appropriate patch parameters, the main radiating patch 22 and the parasitic radiating patch 21 can form two similar resonant frequencies, where the resonant frequency corresponding to the main radiating patch 22 is... The resonant frequency corresponding to the parasitic radiation patch 21 The patch parameters mainly refer to the patch size, as well as the dielectric constant and thickness of the corresponding substrate. The L-probe feed circuit 23, coupled with the main radiating patch and the parasitic radiating patch, forms the third resonant frequency. . It is mainly determined by the length of the metal transmission line in the L-probe feeding circuit 23. The overall length of the metal line can be adjusted. The position makes lie in Nearby. Meanwhile, the length of the metal transmission line in the L-probe feed circuit 23 also affects the impedance matching of the coupling structure. Therefore, in order to obtain a better three-frequency resonance effect, it is necessary to perform joint simulation and optimization of the three variables: the main radiating patch parameters, the parasitic radiating patch parameters, and the metal transmission line length, to achieve the optimal operating bandwidth.
[0064] In one embodiment of this application, for the broadband band to be covered by the transceiver antenna, the X / Ku band needs to be covered. For this broadband band, the dielectric constant of each dielectric substrate is selected to be in the range of 3-4. The thickness of the first, second, and third dielectric substrates is in the range of 0.60-0.90 mm, and the thickness of the fourth and fifth dielectric substrates is in the range of 0.3-0.5 mm; the size of the main radiating patch is in the range of 5-7 mm; the size of the parasitic radiating patch 21 is in the range of 5-7 mm; the width of the two metal transmission lines in the L-probe feed circuit is in the range of 0.5-1.8 mm, and the length is in the range of 1-3 mm.
[0065] In a specific example of this application, the parameters of the main radiating patch, the parameters of the parasitic radiating patch, and the length of the metal transmission line are jointly simulated and optimized. The main radiating patch is an equilateral octagon, and the parasitic radiating patch is circular. The joint simulation results show that the dielectric constant of each dielectric layer is 3.4, the thickness of the first, second, and third dielectric layers is 0.75 mm, and the thickness of the fourth and fifth dielectric layers is 0.4 mm. The diameter of the inscribed circle of the main radiating patch is 6 mm, and the diameter of the parasitic radiating patch is 5.2 mm. The two metal transmission lines in the L-probe feed circuit are perpendicular to the edge line of the main radiating patch. Each transmission line has a width of 0.8 mm and a length of 2.38 mm. The length of the portion extending into the main radiating patch in the direction perpendicular to the third and fourth dielectric layers is 1.152 mm (i.e., the length of overlap between the orthographic projection of the metal line and the main radiating patch in the dielectric thickness direction is 1.152 mm). In this way, a 0.75 mm thick main radiating patch dielectric substrate and a 1.5 mm thick parasitic radiating patch dielectric substrate can be formed. Figure 7 The simulated VSWR curve of the ultra-wideband antenna, derived from the above parameters, is shown. It can be seen that the three resonant frequencies are close to each other, forming a three-peak resonant circuit with a bandwidth extension effect, achieving a relative bandwidth of up to 30%.
[0066] In other embodiments of this application, the L-probe feeding circuit 23 can also be coupled in a slot coupling manner, forming a third resonant frequency point through slot radiation. Specifically, a metal ground can be provided on the lower surface of the second dielectric substrate, and slots can be designed on this metal ground. Radio frequency signals can be coupled and excited by the stripline formed by the metal ground and the slots, thereby radiating into space. The slots on the metal ground can be I-shaped slots.
[0067] In one embodiment of this application, the 3dB bridge 24 is a four-port circuit in the form of a metal stripline. Two output ports are connected to two orthogonal metal transmission lines in the L-probe feed circuit 23 via a coaxial structure formed by metallized vias. The other two input ports can switch between left and right circular polarization. After the radio frequency signal enters the 3dB bridge 24 from either input port, two radio frequency signals are output from the two output ports to the L-probe feed circuit 23, thereby exciting the radiating part of the antenna to form two orthogonal linearly polarized radiation fields. Since the two radio frequency signals have equal amplitudes and a 90° phase difference, these two orthogonal linearly polarized radiation fields can be synthesized into a circularly polarized radiation field, thereby improving the stability and reliability of signal transmission. Figure 8 The left-hand circular polarization gain curve of the ultra-wideband antenna is shown; Figure 9 The gain curve of the right-hand circular polarization of the ultra-wideband antenna is shown. Thus, the ultra-wideband antenna of this application also achieves dual circular polarization operation.
[0068] According to the embodiments of this application, the ultra-wideband antenna has a relative operating bandwidth of up to 30%, covering the entire operating frequency band of the transmitting and receiving antennas. It realizes the dual circular polarization switching function for transmitting and receiving through a single unit, truly achieving a common aperture design for transmitting and receiving, which can effectively reduce the size and cost of the product.
[0069] The above description is merely an illustrative embodiment of this application. Any equivalent changes and modifications made by those skilled in the art without departing from the concept and principles of this application shall fall within the scope of protection of this application.
Claims
1. A wireless communication device for satellite communication, characterized in that, include: Ultra-wideband antenna; The ultra-wideband antenna comprises, from top to bottom, a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, and a fifth dielectric substrate. The upper surface of the first dielectric substrate is provided with a parasitic radiation patch, the lower surface of the second dielectric substrate is provided with a main radiation patch, the upper surface of the third dielectric substrate is provided with an L-probe feeding circuit, and the lower surface of the fourth dielectric substrate is provided with a 3dB bridge. The 3dB bridge on the lower surface of the fourth dielectric substrate is electrically connected to an external power supply structure introduced from the lower surface of the fifth dielectric substrate through a first metallized via, thereby connecting the 3dB bridge to an external network. The 3dB bridge on the lower surface of the fourth dielectric substrate is electrically connected to the L-probe feed circuit on the upper surface of the third dielectric substrate through a second metallized via, thereby connecting the 3dB bridge to the antenna radiating section. The L-probe feeding circuit includes two orthogonally placed metal transmission lines. The radio frequency signal is coupled and transmitted to the main radiating patch through the L-probe feeding circuit and excites the parasitic radiating patch. The main radiating patch and the parasitic radiating patch form two resonant frequency points. The coupling feeding structure of the L-probe feeding circuit with the main radiating patch and the parasitic radiating patch forms a third resonant frequency point.
2. The wireless communication device for satellite communication according to claim 1, characterized in that, The lower surface of the fifth dielectric substrate is provided with a first metal ground, and the upper surface of the fourth dielectric substrate is provided with a second metal ground. The first metal ground on the lower surface of the fifth dielectric substrate is electrically connected to the second metal ground on the upper surface of the fourth dielectric substrate through a third metallized via, thereby isolating the electromagnetic transmission energy of the 3dB bridge from the outside world.
3. The wireless communication device for satellite communication according to claim 2, characterized in that, A first metal isolation strip is provided on the upper surface of the first layer dielectric substrate, and the first metal isolation strip is disposed around the parasitic radiation patch in the edge region of the upper surface of the first layer dielectric substrate; A second metal isolation strip is provided on the lower surface of the second layer dielectric substrate, and the second metal isolation strip is disposed around the edge region of the lower surface of the second layer dielectric substrate; A third metal isolation strip is provided on the upper surface of the third dielectric substrate, and the third metal isolation strip is disposed around the edge region of the upper surface of the third dielectric substrate around the L-probe feeding circuit; as well as A fourth metal isolation strip is provided on the lower surface of the fourth dielectric layer, and the fourth metal isolation strip is disposed around the edge region of the lower surface of the fourth dielectric layer, surrounding the 3dB bridge. The first metal ground on the lower surface of the fifth dielectric substrate is electrically connected to the first metal isolation strip on the upper surface of the first dielectric substrate, the second metal isolation strip on the lower surface of the second dielectric substrate, the third metal isolation strip on the upper surface of the third dielectric substrate, and the fourth metal isolation strip on the lower surface of the fourth dielectric substrate through a fourth metallized via, thereby achieving isolation between the ultra-wideband antenna and adjacent antenna elements.
4. The wireless communication device for satellite communication according to claim 1, characterized in that, The thickness of the first, second, and third dielectric layers ranges from 0.6 to 0.9 mm, and the dielectric constant ranges from 3 to 4; the thickness of the fourth and fifth dielectric layers ranges from 0.3 to 0.5 mm, and the dielectric constant ranges from 3 to 4.
5. The wireless communication device for satellite communication according to claim 1, characterized in that, The size range of the main radiating patch is 5-7mm; The size range of the parasitic radiation patch is 5-7 mm; The width of the two metal transmission lines in the L-probe feeding circuit is 0.5-1.8 mm, and the length is 1-3 mm.
6. The wireless communication device for satellite communication according to claim 5, characterized in that, The dielectric constants of the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer, and the fifth dielectric layer are all 3.
4. The thickness of the first dielectric substrate, the second dielectric substrate, and the third dielectric substrate is 0.75 mm, and the thickness of the fourth dielectric substrate and the fifth dielectric substrate is 0.4 mm. The main radiating patch is an equilateral octagon with an inscribed circle diameter of 6 mm. The parasitic radiation patch is circular with a diameter of 5.2 mm; The two metal transmission lines in the L-probe feeding circuit are perpendicular to one edge of the main radiating patch. Each transmission line has a width of 0.8 mm and a length of 2.38 mm. In the thickness direction perpendicular to the third and fourth dielectric substrates, the length of the portion where the two metal transmission lines overlap with the orthographic projection of the main radiating patch is 1.152 mm.
7. The wireless communication device for satellite communication according to claim 1, characterized in that, The 3dB bridge is a four-port circuit, in which two output ports are connected to two orthogonally placed metal transmission lines in the L-probe feed circuit through a coaxial structure formed by metallized vias. After an RF signal is input from either of the two input ports, two RF signals are output from the two output ports to the L-probe feed circuit.
8. The wireless communication device for satellite communication according to any one of claims 1-4, characterized in that, The first, second, third, fourth, and fifth dielectric layers are all integrated by prepreg bonding.
9. The wireless communication device for satellite communication according to claim 8, characterized in that, The thickness of the prepreg between the first and second dielectric layers and the prepreg between the second and third dielectric layers is 0.2 mm. The thickness of the prepreg between the third and fourth dielectric layers and the prepreg between the fourth and fifth dielectric layers is 0.1 mm. The prepreg between the first and second dielectric layers and the prepreg between the second and third dielectric layers are obtained by combining two prepregs with a standard thickness of 0.1 mm.