A laser etching control method, system and electronic device

Abstract

The application discloses a kind of laser etching control method, system and electronic equipment, it is related to laser processing related technical field, the method includes: etching texture is added to the control center of laser etching equipment, etching texture mark is based on the microstructure characteristics of key node;By introducing curved surface point cloud projection, add first control block, by optimizing multi-axis free linkage mode, add second control block;Etching texture is projected from two-dimensional plane to three-dimensional curved surface and executed etching positioning, to idle travel truncation is executed under multi-axis free linkage of cross-scale integration, determine laser etching strategy;According to laser etching strategy, drive laser etching equipment to execute automatic laser etching control.The technical problems that the prior art exists, such as difficult to accurately process etching requirements with special microstructure characteristics, unable to efficiently match complex three-dimensional curved surface etching, resulting in insufficient laser etching precision, low efficiency, are solved, and the technical effects of improving laser etching precision and processing efficiency are achieved.

Description

Technical Field

[0001] This application relates to the field of laser processing technology, specifically to a laser etching control method, system, and electronic device. Background Technology

[0002] Traditional laser etching methods have several limitations when dealing with etching tasks featuring complex microstructures. On one hand, processing the etched texture struggles to accurately translate key node-based microstructural features into effective etching commands, resulting in etched microstructures that fail to meet increasingly stringent precision and performance standards. On the other hand, in terms of laser etching control, existing control methods are ill-suited to diverse etchable substrates. Different substrate materials exhibit varying absorption, reflection, and thermal conductivity characteristics of lasers, making it difficult for existing laser etching control methods to achieve precise projection and positioning of etched textures from two-dimensional planes to three-dimensional curved surfaces. Furthermore, they cannot achieve efficient multi-axis free linkage, impacting the accuracy and efficiency of laser etching.

[0003] Therefore, current technologies suffer from technical problems such as difficulty in accurately handling etching requirements with special microstructure features and inability to efficiently match the etching of complex three-dimensional curved surfaces, resulting in insufficient precision and low efficiency in laser etching. Summary of the Invention

[0004] This application provides a laser etching control method, system, and electronic device, which solves the technical problems in the prior art that make it difficult to accurately process etching requirements with special microstructure features and cannot efficiently match the etching of complex three-dimensional curved surfaces, resulting in insufficient laser etching accuracy and low efficiency, and achieves the technical effect of improving laser etching accuracy and processing efficiency.

[0005] This application provides a laser etching control method, the method comprising: adding an etching texture to the control center of a laser etching device, wherein the etching texture is identified based on the microstructural features of key nodes; adding a first control block by introducing curved point cloud projection, adding a second control block by optimizing the multi-axis free linkage mode, coupling the first control block and the second control block, and embedding them in the control center; determining the substrate material and geometric characteristics of the etched substrate part, using the geometric characteristics as constraints, triggering the first control block to project the etching texture from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, using the substrate material and microstructural features as constraints, performing multi-axis free linkage under cross-scale integration with space truncation to determine a laser etching strategy; and driving the laser etching device to perform automated laser etching control according to the laser etching strategy.

[0006] In a possible implementation, the laser etching control method further performs the following processing: traversing the etching texture to locate etching parameter adjustment positions based on changes in etching requirements; determining microstructure features for each etching parameter adjustment position, wherein the microstructure features are determined based on etching requirements; and mapping the etching parameter adjustment positions to the microstructure features to identify the etching texture.

[0007] In a possible implementation, the laser etching control method further performs the following processing: identifying the geometric characteristics, determining whether the first control block is triggered based on geometric complexity and surface characteristics; if triggered, determining the projection plane, wherein the projection plane is a two-dimensional projection plane based on a preset viewpoint of the etching region, and the projection plane and the etching region are established with a positional mapping; and performing geometric alignment of the etching texture according to the projection plane to determine the etching positioning result.

[0008] In a possible implementation, the laser etching control method further performs the following processing: projecting the etching texture onto the projection plane; using the key nodes as projection point clouds, mapping the etching region of the etching texture projected onto the projection plane according to the mapping between the projection plane and the etching region, and using the projection point cloud for geometric alignment to determine the etching positioning result.

[0009] In a possible implementation, the laser etching control method further performs the following processes: determining a laser etching mode, wherein the laser etching mode includes direct etching and modified etching, and the modified etching includes a first modification stage and a second etching stage; determining multiple sub-control threads based on the laser etching mode by performing mode decoupling and truncation segmentation, wherein the multiple sub-control threads have peer identifiers and sequential position identifiers; determining multiple sets of laser parameters for the multiple sub-control threads based on the microstructure features and the substrate material as constraints; and mapping and integrating the multiple sub-control threads and the multiple sets of laser parameters as the laser etching strategy.

[0010] In a possible implementation, the laser etching control method further performs the following processing: taking the key node as the first truncation position, determining the second truncation position by trajectory idle distance; and performing truncation segmentation for etching control based on the first truncation position and the second truncation position.

[0011] In a possible implementation, the laser etching control method further performs the following processing: using the peer identifier and the sequential identifier as constraints, for the control axis of the laser etching device, thread control allocation is performed based on the laser etching strategy to drive the control axis to perform self-driven collaborative etching control; the etching process of the control axis is dynamically tracked to locate idle control axes; and automated laser etching control is performed based on continuous tracking and thread control allocation of idle control axes.

[0012] In a possible implementation, the laser etching control method further performs the following processing: for the laser etching strategy, a free threshold is set thread by thread, and the monitoring and control deviation is located under dynamic tracking with the free threshold as a constraint to determine the rework etching scheme; according to the peer identifier and the sequential identifier, an entry thread for the rework etching scheme is added; the rework etching scheme is added to the laser etching strategy by the entry thread.

[0013] This application also provides a laser etching control system, the system comprising: an etching texture adding module, used to add etching textures to the control center of a laser etching device, wherein the etching texture identifier is based on the microstructural features of key nodes; a control block coupling module, used to add a first control block by introducing curved point cloud projection, and add a second control block by optimizing the multi-axis free linkage mode, coupling the first control block and the second control block, and embeddedly deployed in the control center; a laser etching strategy determination module, used to determine the substrate material and geometric characteristics of the etched substrate part, using the geometric characteristics as constraints, triggering the first control block to project the etching texture from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, using the substrate material and microstructural features as constraints, and performing multi-axis free linkage under cross-scale integration with space truncation to determine the laser etching strategy; and a laser etching control module, used to drive the laser etching device to perform automated laser etching control according to the laser etching strategy.

[0014] This application also provides an electronic device, including: a memory for storing executable instructions; and a processor for implementing a laser etching control method when executing the executable instructions stored in the memory.

[0015] This application proposes a laser etching control method, system, and electronic device. The method adds etching textures to the control center of a laser etching device, with the texture identifiers based on the microstructural features of key nodes. A first control block is added by introducing curved point cloud projection, and a second control block is added by optimizing the multi-axis free linkage mode. The etching texture is projected from a two-dimensional plane onto a three-dimensional curved surface for etching positioning. Multi-axis free linkage under cross-scale integration is performed using space-time truncation to determine the laser etching strategy. Based on the laser etching strategy, the laser etching device is driven to perform automated laser etching control. This solves the technical problems in existing technologies, such as the difficulty in accurately handling etching requirements with special microstructural features and the inability to efficiently match complex three-dimensional curved surface etching, leading to insufficient laser etching accuracy and low efficiency. This achieves the technical effect of improving laser etching accuracy and processing efficiency. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments of this disclosure will be briefly described below. Flowcharts are used in this application to illustrate the operations performed by the system according to the embodiments of this application. It should be understood that the preceding or following operations are not necessarily performed precisely in sequence. Instead, various steps can be processed in reverse order or simultaneously as needed. Furthermore, other operations can be added to these processes, or one or more steps can be removed from these processes.

[0017] Figure 1 This is a schematic diagram of a laser etching control method provided in an embodiment of this application.

[0018] Figure 2 This is a schematic diagram of a laser etching control system structure provided in an embodiment of this application.

[0019] Figure 3 A schematic diagram of the structure of an electronic device provided in this application embodiment. Explanation of reference numerals in the attached figures: 10 for etching texture addition module, 20 for control block coupling module, 30 for laser etching strategy determination module, 40 for laser etching control module, 401 for input device, 402 for processor, 403 for memory, and 404 for output device. Detailed Implementation

[0020] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, specific embodiments of this application are given below.

[0021] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description of this application will be provided in conjunction with the accompanying drawings. The described embodiments should not be considered as limitations on this application. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] In the following description, references to "some embodiments" describe a subset of all possible embodiments. However, it is understood that "some embodiments" can be the same or different subsets of all possible embodiments and can be combined with each other without conflict. The terms "first" and "second" are used merely to distinguish similar objects and do not represent a specific ordering of objects. The terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or modules not explicitly listed or inherent to these processes, methods, products, or devices. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only.

[0023] This application provides a laser etching control method, such as... Figure 1 As shown, the method includes: Step S100: Add the etching texture to the control center of the laser etching equipment, wherein the etching texture identifier is based on the microstructural features of key nodes.

[0024] Preferably, the etched texture refers to the texture that is expected to be formed on the material surface during laser etching. The etched texture is identified based on the microstructural features of key nodes. Key nodes are points of special significance in the etched texture, such as inflection points in the texture shape or points with significant curvature changes. Microstructural features describe the geometric shape, size, spacing, and other characteristics of the etched texture at the microscale. The width, height, and spacing of the microstructure directly affect the performance and appearance of the etched material. Specifically, the etched texture is identified by the microstructural features of key nodes. That is, by determining the position of the key nodes and their corresponding microstructural features, the entire etched texture is accurately described, thus enabling a more accurate expression of the detailed information of the etched texture. Then, the etched texture identified based on the microstructural features of key nodes is added to the control center. The control center is the core component of the laser etching equipment, responsible for receiving various instructions and controlling the output movement of the laser, including precisely controlling parameters such as laser intensity and scanning path according to the etched texture, thereby etching a texture that meets the requirements on the material surface.

[0025] Furthermore, step S100 also includes step S110, traversing the etching texture to locate the etching parameter adjustment position based on the change in etching requirements; step S120, determining the microstructure features for each etching parameter adjustment position, wherein the microstructure features are determined based on the etching requirements; and step S130, mapping the etching parameter adjustment position to the microstructure features to identify the etching texture.

[0026] Preferably, the etched texture is analyzed sequentially (e.g., from left to right, from top to bottom). Based on changes in etching requirements, the locations where laser etching parameters (e.g., laser power, scanning speed, pulse frequency, etc.) need adjustment are identified. Different regions may have different requirements for light refraction and reflection, and etching requirements vary at different locations within the etched texture. For example, when etching a pattern with varying depths, different depths require different laser powers; the locations where depth changes are where parameters need adjustment. Then, based on specific etching requirements, the microstructural characteristics corresponding to each etching parameter adjustment location are defined, i.e., the characteristics of the etched texture at the microscale, such as the shape (circle, square, triangle, etc.), size (width, height, diameter, etc.), and spacing of the microstructure. These directly affect the performance and function of the etched material. For example, if the etching requirement is to create a grating with a specific optical diffraction effect, the microstructural shape (e.g., rectangular grating, sinusoidal grating) and size (grating period, groove depth, etc.) of the grating are determined according to diffraction requirements. Finally, a mapping relationship is established between etching parameter tuning positions and microstructure features. That is, each etching parameter tuning position is associated with a microstructure feature. During laser etching, the corresponding microstructure feature parameters are accurately called according to the etching position. The etching texture is given a clear identifier through the mapping relationship, making the etching texture an operable object with microstructure feature information. The laser etching equipment can use appropriate parameters to etch at different etching parameter tuning positions according to the identifier, thereby achieving precise and efficient laser etching.

[0027] Step S200: By introducing curved point cloud projection, a first control block is added; by optimizing the multi-axis free linkage mode, a second control block is added; the first control block and the second control block are coupled and embedded in the control center.

[0028] Preferably, the curved point cloud is a set of discrete points on the surface of an object obtained through 3D scanning, etc. Each point carries precise 3D coordinate information, which can accurately restore the shape of the object's curved surface. For laser etching, the object to be processed has a complex curved surface, and it is extremely difficult to plan the etching path directly based on 3D data. Therefore, curved point cloud projection is performed, that is, the complex 3D point cloud data is projected onto a 2D plane, which greatly reduces the complexity of subsequent data processing and path planning. A first control block is added to process the 2D data after projection, including planning the scanning path and parameters of the laser on the 2D plane based on the 2D pattern information, such as determining the laser's starting scanning position, scanning sequence, and speed.

[0029] Preferably, laser etching equipment is typically equipped with multiple motion axes, such as X, Y, and Z linear axes and rotary axes. Multi-axis free linkage aims to coordinate the operation of these axes, allowing the laser head to move flexibly in three-dimensional space to meet the etching requirements of different shapes and angles. Specifically, the multi-axis free linkage mode is optimized by improving control algorithms, such as using more advanced PID control algorithms to optimize the response speed and accuracy of each axis's motion, and by optimizing the mechanical structure, such as enhancing the rigidity of transmission components to reduce vibration and deviation during movement, thereby improving the coordination and accuracy of the motion between axes, reducing errors and delays during the motion process, and thus improving the quality and efficiency of etching. A second control block is added to manage and regulate the optimized multi-axis free linkage mode. Based on the detailed requirements of the etching task, the motion parameters of each axis are calculated and adjusted in real time. For example, when etching a mold with a complex curved surface, when the laser head approaches an area with large changes in surface curvature, the second control block rapidly increases the motion speed of a certain axis or adjusts its acceleration, while simultaneously reducing the speed of other axes to ensure that the laser head can accurately and smoothly etch along the curved surface shape.

[0030] Preferably, the first control block and the second control block are coupled, establishing information collaboration and interaction between them. The 2D scanning path information generated by the first control block is transmitted to the second control block in real time. The second control block, combined with the actual coordinates of the current etching position in 3D space, calculates the specific motion parameters required for each motion axis. Simultaneously, the second control block feeds back the actual motion status of each axis (e.g., whether the predetermined position has been reached, whether any deviations have occurred during the motion) to the first control block. Based on the feedback, the first control block makes necessary adjustments to the 2D scanning path, ensuring seamless integration of 2D planning and 3D motion control, thereby making the laser etching process more accurate and efficient. Finally, the coupled first and second control blocks are embedded and deployed in the control center. The control center can directly call the functions of the first and second control blocks. When the operator inputs relevant parameters for the etching task (e.g., the 3D model of the workpiece, etching texture requirements, etc.), the control center can automatically coordinate the work of the first and second control blocks according to the task requirements, selecting appropriate control strategies to achieve automation and intelligence of the entire laser etching process.

[0031] Step S300: Determine the substrate material and geometric characteristics of the etched substrate part. Using the geometric characteristics as constraints, trigger the first control block to project the etch texture from the two-dimensional plane to the three-dimensional curved surface to perform etch positioning. Using the substrate material and microstructure features as constraints, perform multi-axis free linkage under cross-scale integration with space truncation to determine the laser etching strategy.

[0032] Preferably, the substrate material and geometric characteristics of the etched substrate part are determined. Different substrate materials have different properties in terms of laser absorption, reflection, and heat conduction. For example, metallic materials (such as aluminum alloys and stainless steel), ceramic materials, and polymer materials (such as polytetrafluoroethylene) directly affect the laser etching effect, including etching speed, etching depth, and surface quality. Geometric characteristics include the shape (such as planes, curved surfaces, and complex irregular structures) and dimensions (length, width, height, radius of curvature, etc.) of the etched substrate part. The more complex the geometry, the greater the difficulty in planning and controlling the laser etching path. For example, the curvature variation of the surface of an optical lens with a free-form surface affects the projection and positioning of the laser etching texture. Then, using the determined geometric characteristics of the etched substrate material as constraints, the first control block is triggered. Based on the two-dimensional etching texture information and combined with the three-dimensional geometric characteristics of the part (such as the shape and size of the curved surface), the etching texture is accurately mapped from the two-dimensional plane to the three-dimensional curved surface to perform etching positioning, that is, to determine the accurate position of each etching in three-dimensional space.

[0033] Preferably, the substrate material and microstructure characteristics are used as constraints. That is, appropriate laser parameters are selected based on the material properties and the size and shape characteristics of the microstructure. Then, multi-axis free linkage under cross-scale integration is performed by using space-time truncation. Specifically, space-time refers to the laser head moving from one etching position to the next etching position without etching. Space-time truncation refers to reducing unnecessary space-time movement and improving etching efficiency by optimizing path planning. For example, when etching multiple dispersed micro-regions, the path is rationally planned so that the laser head does not pass through areas that do not need to be etched as much as possible when moving between different regions, thereby improving etching efficiency. Finally, multi-axis free linkage under cross-scale integration is implemented. Cross-scale integration means that it is necessary to meet the etching requirements of the entire part at the macro scale (such as the processing of the overall shape) and also take into account the etching of micro-structural features at the micro scale (such as nanoscale fine structures). Multi-axis free linkage is to enable the laser head to move flexibly in three-dimensional space through the coordinated movement of multiple motion axes (such as X, Y, Z axes and rotation axes) to meet the etching requirements at different scales, thereby determining the laser etching strategy, including when to start and stop the laser, the movement speed and acceleration of each axis at different stages, etc., in order to achieve high-quality laser etching processing.

[0034] Furthermore, step S300 also includes step S310, identifying the geometric characteristics, and determining whether the first control block is triggered based on geometric complexity and surface characteristics; step S320, if triggered, determining the projection plane, wherein the projection plane is a two-dimensional projection plane based on a preset viewpoint of the etched area, and the projection plane and the etched area are established with a positional mapping; step S330, based on the projection plane, performing geometric alignment on the etched texture to determine the etch positioning result.

[0035] Preferably, a comprehensive identification of the geometric characteristics of the etched substrate part is performed, including its shape, size, surface curvature, and the presence of step structures (such as obvious height differences on the part surface). Geometric complexity and surface characteristics are used to determine whether to trigger the first control block. Specifically, geometric complexity mainly manifests in cases where the etching pattern spans multiple step structure positions. When the etching pattern needs to etch different parts with height differences, the differences in height and position of different step structures make it difficult for the laser etching equipment to accurately determine the three-dimensional coordinates of each etching point. Surface characteristics include changes in surface curvature and stretching. If the stretching under the surface cannot guarantee the adaptability of direct mapping (i.e., directly applying the two-dimensional etching texture to the three-dimensional surface), it indicates that the etching texture cannot be simply applied to the surface. Through the analysis of geometric complexity and surface characteristics, if the geometry of the etched substrate part makes direct positioning and mapping difficult, the first control block is triggered for more complex processing.

[0036] Preferably, after determining that the first control block needs to be triggered, a projection plane is determined. The projection plane is a two-dimensional projection surface obtained based on a preset viewpoint of the etched area. The selection of the preset viewpoint depends on the geometric characteristics and etching requirements of the etched area. A positional mapping relationship is established between the projection plane and the etched area, indicating that each point on the projection plane corresponds to a specific position on the etched area (three-dimensional curved surface). Through the mapping relationship, the information on the two-dimensional projection plane is accurately converted to the three-dimensional etched area. Then, according to the determined projection plane, the etched texture is geometrically aligned with the projection plane. That is, the etched texture is adjusted and matched according to the geometric rules of the projection plane. For example, the shape and size of the etched texture are aligned with the coordinate system on the projection plane to make it conform to the geometric characteristics of the projection plane. This accurately determines the position and direction of the etched texture on the projection plane. Combined with the positional mapping relationship between the projection plane and the etched area, the etched texture can be accurately positioned on the three-dimensional etched area, thereby obtaining the etching positioning result. This ensures that the laser can accurately etch on the etched area as expected, achieving precise laser etching.

[0037] Furthermore, step S330 also includes step S331, projecting the etched texture onto the projection plane; step S332, using the key node as a projection point cloud, mapping the etched texture projected onto the projection plane according to the mapping between the projection plane and the etched area, and using the projection point cloud for geometric alignment to determine the etch positioning result.

[0038] Preferably, the etched texture is projected onto a projection plane, i.e., through parallel projection or perspective projection, the etched texture is transformed from three-dimensional space and displayed on a two-dimensional projection plane. The key points of the etched texture are treated as point cloud data (i.e., point cloud projection). Then, based on the mapping between the projection plane and the etched area, the etched texture projected onto the projection plane is mapped to the actual etched area (three-dimensional curved surface) according to its position and shape on the projection plane. In other words, through the mapping between the projection plane and the etched area, the two-dimensional etched texture pattern is restored and transformed into the three-dimensional etched area, determining its actual position and range in three-dimensional space; then, the projection... The shadow point cloud is geometrically calibrated, which involves comparing and matching the geometric shape and position of the etched texture mapped onto the etched area with the actual etched area. This further refines the position and orientation of the etched texture on the etched area. For example, it checks whether the position of the key node on the etched area matches the expectation. If not, the position of the etched texture is fine-tuned according to the actual situation. Finally, the accurate position and orientation of the etched texture on the etched area are determined and used as the etch positioning result to accurately guide the laser etch operation, ensuring that the laser can accurately process the etched area at the predetermined position and orientation, thereby achieving the expected etch effect.

[0039] Furthermore, step S300 also includes step S340, determining a laser etching mode, wherein the laser etching mode includes direct etching and modified etching, and the modified etching includes a first modification stage and a second etching stage; step S350, based on the laser etching mode, determining multiple sub-control threads by executing mode decoupling and truncation segmentation, wherein the multiple sub-control threads have peer identifiers and sequential position identifiers; step S360, for the multiple sub-control threads, determining multiple sets of laser parameters based on the microstructure features and the substrate material as constraints; step S370, mapping and integrating the multiple sub-control threads and the multiple sets of laser parameters as the laser etching strategy.

[0040] Preferably, the laser etching mode includes direct etching and modified etching. Direct etching refers to directly using a laser to etch the substrate material, removing the material to form the desired microstructure or pattern. Modified etching includes a first modification stage and a second etching stage. In the first modification stage, the laser treats the substrate material, but does not directly remove the material. Instead, it changes the surface properties or microstructure of the material. For example, the atomic structure of the material surface is changed by laser irradiation, or the chemical properties of the material surface are changed. In the second etching stage, the etching operation is performed again, which can achieve a better etching effect.

[0041] Preferably, the laser etching mode is decoupled from the execution mode, that is, the laser etching mode (direct etching or modified etching) is decomposed into different components and then truncation and segmentation are performed. That is, the entire etching process is divided into multiple sub-processes according to certain rules (such as time, space or operation type), and multiple sub-control threads are determined. Each sub-control thread has a peer identifier and a priority identifier. The peer identifier indicates that the sub-control threads are logically at the same level, and the priority identifier specifies the execution order in the etching process. For example, in modified etching, the sub-control thread of the first modification stage is executed before the sub-control thread of the second etching stage, but they still belong to the same level of operation.

[0042] Preferably, different microstructure features (such as the shape, size, and spacing of the microstructure) have different requirements for laser parameters. The laser power, pulse frequency, scanning speed, and other parameters are adjusted according to the microstructure features to achieve specific microstructures and ensure etching accuracy. The substrate material serves as a constraint, including limiting the laser parameters based on the properties of the substrate material. Furthermore, a set of suitable laser parameters is determined for each sub-control thread based on its specific task. At the same time, laser etching equipment typically has multiple control axes (such as X, Y, Z axes and rotation axes). These multiple control axes are freely allocated in actual operation, breaking down the overall etching requirements into multiple sub-control threads. The positioning trajectory (i.e., the movement path of the laser in the etching area) and corresponding laser parameters of each sub-control thread are clearly defined.

[0043] Preferably, based on the sequential identifiers of the sub-control threads, a control thread is first assigned to each axis, allowing these axes to autonomously control themselves under their respective control threads. This achieves synchronous drive, meaning each axis moves according to the instructions of its own control thread while maintaining coordination to ensure the laser etches along a predetermined trajectory. Due to the adaptive nature of the truncation, the end time of each thread's control differs; different sub-control threads may contain different operational complexities and etching tasks, resulting in varying execution times. Once an idle axis is identified (i.e., an axis has completed its current control thread's task and is idle), it is immediately reassigned a thread to continue the etching operation, and so on, until the entire etching operation is completed. Finally, the identified multiple sub-control threads and corresponding sets of laser parameters are mapped and integrated, associating each sub-control thread with its corresponding laser parameters to form a laser etching strategy. This strategy details the execution order of each sub-control thread, the corresponding laser parameters, and the movement mode of each control axis throughout the etching process, ensuring efficient and precise completion of the etching task.

[0044] Furthermore, step S350 also includes step S351, which uses the key node as the first cutoff position and determines the second cutoff position by trajectory idle distance; step S352, which performs etch-controlled cutoff segmentation based on the first cutoff position and the second cutoff position.

[0045] Preferably, key nodes are used as the first cutoff points to divide the entire etching process according to the geometric features of the pattern, which helps to control the etching process more precisely. The second cutoff point is determined based on the trajectory space, i.e., a suitable position is selected as the cutoff point within the trajectory space for segmentation, which better optimizes the laser's motion path and etching sequence, avoids unnecessary space movement, and improves etching efficiency. Then, combining the first and second cutoff points, the etching control is further segmented, dividing the entire etching process into multiple sub-tasks according to these cutoff points. Each sub-task has a clear start and end position, as well as corresponding etching control parameters and motion trajectories. Through segmentation, the laser etching process can be controlled more precisely. Based on the characteristics and requirements of different sub-tasks, laser parameters (such as power and frequency) and motion modes (such as scanning speed and path) can be adjusted to achieve a more accurate and efficient etching effect.

[0046] Step S400: Drive the laser etching equipment to perform automated laser etching control according to the laser etching strategy.

[0047] Preferably, the laser etching strategy includes laser etching mode (direct etching or modified etching, etc.), arrangement of sub-control threads (including the order and execution sequence of each sub-control thread), multiple sets of laser parameters (such as laser power, pulse frequency, scanning speed, etc.), and movement mode of the control axes. The laser etching equipment is driven according to the laser parameters determined in the etching strategy, i.e., the parameters of the laser generator are automatically adjusted to meet the needs of different etching stages and microstructure features. Furthermore, according to the requirements of each sub-control thread on the control axes in the etching strategy, multiple axes of the laser etching equipment are driven to move collaboratively. For example, according to the pre-planned etching path, the X and Y axes are controlled to move the laser head on a plane, while simultaneously... The Z-axis height is adjusted as needed to accommodate etching surfaces of varying heights. Simultaneously, each sub-control thread is executed sequentially according to its order and synchronization requirements. The completion status of each sub-control thread and the operating status of the equipment are monitored in real time. If a sub-control thread completes, the next sub-control thread is immediately started according to the strategy, ensuring the continuity and smoothness of the etching process. Furthermore, various sensors (such as position sensors and power sensors) are used to monitor and provide feedback on relevant information during the etching process in real time, such as the actual position of the laser head and the actual output value of the laser power. This information is compared with the expected values ​​in the etching strategy, and automatic adjustments are made if deviations are detected. Ultimately, a microstructure pattern conforming to the design requirements is formed on the etched substrate part, achieving automated laser etching control and improving etching accuracy and efficiency.

[0048] Furthermore, step S500 also includes step S510, using the peer identifier and the sequential identifier as constraints, performing thread control allocation based on the laser etching strategy for the control axis of the laser etching equipment, and driving the control axis to perform self-driven collaborative etching control; step S520, dynamically tracking the etching process of the control axis and locating idle control axes; step S530, performing automated laser etching control based on continuous tracking and thread control allocation of idle control axes.

[0049] Preferably, according to the laser etching strategy, different sub-control threads are assigned to each control axis of the laser etching equipment according to their hierarchical and sequential identifiers. Each control axis will perform corresponding operations based on its assigned sub-control thread. For example, for the X, Y, and Z axes, based on their sequential identifiers, in the first stage, sub-control threads may be assigned to the X and Y axes to control the laser head to move to the starting etching position on the plane, and sub-control threads may be assigned to the Z axis to adjust the height of the laser head to adapt to the workpiece surface. Then, the control axes are driven to perform self-driven collaborative etching control, that is, to drive multiple control axes to work together to ensure the smooth progress of the laser etching process. The working status and position information of each control axis during the laser etching process are acquired in real time by sensors, the etching process is dynamically tracked, it is determined whether the control axis has reached the predetermined position, and it is judged whether the progress of the control axis in executing the sub-control thread meets expectations, including determining which control axes have completed the tasks of the currently assigned sub-control threads and are in an idle state, and locating them as idle control axes. Finally, the idle control axes are continuously tracked and monitored. At the same time, new sub-threads are assigned to the idle control axes according to the laser etching strategy and the current etching progress. By continuously tracking the idle control axes and reallocating tasks, each control axis of the laser etching equipment is always in a state of high-efficiency utilization, continuously and stably executing etching tasks, thereby realizing the automation and efficiency of the entire laser etching process.

[0050] Furthermore, step S500 also includes step S540, setting a free threshold thread by thread for the laser etching strategy; step S550, using the free threshold as a constraint, performing monitoring and control deviation positioning under dynamic tracking to determine the rework etching scheme; step S560, adding an entry thread for the rework etching scheme according to the same-level identifier and the sequential position identifier; step S570, adding the rework etching scheme to the laser etching strategy using the entry thread.

[0051] Preferably, different sub-control threads perform different tasks in laser etching. For example, some are responsible for positioning and moving the laser head, while others are responsible for adjusting the laser power output. The operations contained in each thread have different ways and degrees of influence on the etching results. A free threshold is set for each thread. The free threshold is the allowable fluctuation range set for each sub-control thread in the laser etching strategy to define the acceptable deviation range of the etching situation. Then, the free threshold is used as a constraint for dynamic tracking and deviation positioning. That is, the position information of each control axis, the actual parameters of the laser (such as power, frequency, etc.), and the relevant data of the etching area (such as etching depth, surface roughness, etc.) are monitored and acquired in real time. These are compared with the free threshold set for each sub-control thread. If the actual running data exceeds the free threshold range, the sub-control thread in which the deviation occurred and the specific deviation content are accurately located. Based on the result of the control deviation positioning, a corresponding rework etching plan is formulated to compensate for the processing defects. If the laser power is too high and the etching is too deep, the rework etching plan reduces the laser power and adjusts the etching time or number of scans to ensure the continuity of the entire etching process and the quality of the final etching effect.

[0052] Preferably, based on the requirements of the resuming etching scheme and combining the existing peer and priority identifiers, the specific position in the entire etching process at which the resuming etching scheme should be executed is determined. For example, the original etching strategy is to perform large-area coarse etching first, followed by fine etching. If defects are found during the coarse etching process that need to be compensated, the entry point of the resuming etching scheme may be set after the coarse etching stage and before the fine etching stage, based on the priority identifier. At the same time, peer identifiers are considered to ensure that the resuming etching scheme is coordinated with etching operations at the same logical level. Finally, the resuming etching scheme with the determined entry point is added to the laser etching strategy, that is, the original laser etching strategy is updated and improved, so that the laser etching equipment can accurately perform the corresponding compensation operation at the appropriate time and etching stage according to the updated laser etching strategy, thereby improving the quality and stability of laser etching.

[0053] In the above text, refer to Figure 1 A laser etching control method according to an embodiment of the present invention has been described in detail. Next, reference will be made to... Figure 2 A laser etching control system according to an embodiment of the present invention is described.

[0054] A laser etching control system according to an embodiment of the present invention addresses the technical problems in the prior art, namely, the difficulty in accurately processing etching requirements with special microstructural features and the inability to efficiently match the etching of complex three-dimensional curved surfaces, resulting in insufficient laser etching accuracy and low efficiency. This system achieves the technical effect of improving laser etching accuracy and processing efficiency. Figure 2As shown, a laser etching control system includes: an etching texture addition module 10, a control block coupling module 20, a laser etching strategy determination module 30, and a laser etching control module 40.

[0055] The etching texture adding module 10 is used to add etching textures to the control center of the laser etching equipment, wherein the etching texture identifier is based on the microstructural features of key nodes; the control block coupling module 20 is used to add a first control block by introducing curved point cloud projection, add a second control block by optimizing the multi-axis free linkage mode, couple the first control block and the second control block, and embed them in the control center; the laser etching strategy determination module 30 is used to determine the substrate material and geometric characteristics of the etched substrate part, trigger the first control block with the geometric characteristics as constraints, project the etching texture from the two-dimensional plane to the three-dimensional curved surface to perform etching positioning, and perform multi-axis free linkage under cross-scale integration with the substrate material and microstructural features as constraints and with space truncation to determine the laser etching strategy; the laser etching control module 40 is used to drive the laser etching equipment to perform automated laser etching control according to the laser etching strategy.

[0056] The specific configuration of the etching texture adding module 10 will be described in detail below. The etching texture adding module 10 further includes: traversing the etching texture to locate the etching parameter adjustment position according to the change of etching requirements; determining the microstructure features for each etching parameter adjustment position, wherein the microstructure features are determined by the etching requirements; mapping the etching parameter adjustment position to the microstructure features to identify the etching texture.

[0057] The specific configuration of the laser etching strategy determination module 30 will be described in detail below. The laser etching strategy determination module 30 further includes: identifying the geometric characteristics; determining whether the first control block is triggered based on geometric complexity and surface characteristics; if triggered, determining a projection plane, wherein the projection plane is a two-dimensional projection plane based on a preset viewpoint of the etching region, and the projection plane and the etching region are established with a positional mapping; and performing geometric alignment of the etching texture according to the projection plane to determine the etching positioning result.

[0058] The specific configuration of the laser etching strategy determination module 30 will be described in detail below. The laser etching strategy determination module 30 further includes: projecting the etching texture onto the projection plane; using the key nodes as a projection point cloud; mapping the etching region of the etching texture projected onto the projection plane according to the mapping between the projection plane and the etching region; and using the projection point cloud for geometric alignment to determine the etching positioning result.

[0059] The specific configuration of the laser etching strategy determination module 30 will be described in detail below. The laser etching strategy determination module 30 further includes: determining a laser etching mode, wherein the laser etching mode includes direct etching and modified etching, and the modified etching includes a first modification stage and a second etching stage; determining multiple sub-control threads based on the laser etching mode through execution mode decoupling and truncation segmentation, wherein the multiple sub-control threads have peer identifiers and sequential position identifiers; determining multiple sets of laser parameters for the multiple sub-control threads, based on the microstructure features and the substrate material as constraints; and mapping and integrating the multiple sub-control threads and the multiple sets of laser parameters as the laser etching strategy.

[0060] The specific configuration of the laser etching strategy determination module 30 will be described in detail below. The laser etching strategy determination module 30 further includes: using the key node as a first cutoff position, determining a second cutoff position based on the trajectory idle distance; and performing truncation segmentation for etching control based on the first cutoff position and the second cutoff position.

[0061] The specific configuration of the laser etching control module 40 will be described in detail below. The laser etching control module 40 further includes: using the peer identifier and the sequential identifier as constraints, performing thread control allocation based on the laser etching strategy for the control axis of the laser etching equipment, driving the control axis to perform self-driven collaborative etching control; dynamically tracking the etching process of the control axis and locating idle control axes; and performing automated laser etching control based on continuous tracking and thread control allocation of idle control axes.

[0062] The specific configuration of the laser etching control module 40 will be described in detail below. The laser etching control module 40 further includes: setting a free threshold thread by thread for the laser etching strategy; using the free threshold as a constraint, performing dynamic tracking to monitor and control deviation positioning, and determining a rework etching scheme; adding an entry thread for the rework etching scheme according to the same-level identifier and the sequential position identifier; and adding the rework etching scheme to the laser etching strategy using the entry thread.

[0063] The laser etching control system provided in this embodiment of the invention can execute a laser etching control method provided in any embodiment of the invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0064] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention, showing a block diagram of an exemplary electronic device suitable for implementing the embodiments of the present invention. Figure 3The electronic device shown is merely an example and should not be construed as limiting the functionality and scope of the embodiments of the present invention. This electronic device is in the form of a general-purpose computing device, and its components may include, but are not limited to, an input device 401, a processor 402, a memory 403, and an output device 404. The processor 402 may be one or more; the memory 403 may include a computer-readable medium and at least one program product having a set (at least one) of program modules configured to perform the functions of the embodiments of this application.

[0065] The memory 403 shown in the embodiments of the present invention can be any combination of one or more computer-readable media; the computer-readable storage media can be, but is not limited to, infrared, semiconductor systems, devices or components, or any combination thereof, for storing software programs, computer-executable programs and modules, such as the program instructions / modules corresponding to a laser etching control method in the embodiments of the present invention. The processor 402 executes various functional applications and data processing of the computer device by running the software programs, instructions and modules stored in the memory 403, thereby realizing the above-mentioned laser etching control method.

[0066] Although this application makes various references to certain modules in the system according to the embodiments of this application, any number of different modules can be used and run on user terminals and / or servers. The various units and modules included are only divided according to functional logic, but are not limited to the above division, as long as the corresponding functions can be achieved; in addition, the specific names of each functional unit are only for easy distinction between each other and are not used to limit the scope of protection of this invention.

[0067] The specific embodiments described above do not constitute a limitation on the scope of protection of this application. Those skilled in the art should understand that various modifications, combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A laser etching control method, characterized in that, The method includes: An etching texture is added to the control center of a laser etching device, wherein the etching texture identifier is based on the microstructural features of key nodes; By introducing curved point cloud projection, a first control block is added, and by optimizing the multi-axis free linkage mode, a second control block is added. The first control block and the second control block are coupled and embedded in the control center. The substrate material and geometric characteristics of the etched substrate part are determined. With the geometric characteristics as constraints, the first control block is triggered to project the etch texture from the two-dimensional plane to the three-dimensional curved surface to perform etch positioning. With the substrate material and microstructure characteristics as constraints, multi-axis free linkage under cross-scale integration is performed by truncation to determine the laser etching strategy. According to the laser etching strategy, the laser etching equipment is driven to perform automated laser etching control; The etched texture identifier is based on the microstructural features of key nodes, including: Traverse the etched texture to locate the etch parameter adjustment position based on the changes in etch requirements; For each etching parameter adjustment location, the microstructure features are determined, wherein the microstructure features are determined based on the etching requirements; The etching texture is identified by mapping the etching parameter tuning position to the microstructure features.

2. The laser etching control method as described in claim 1, characterized in that, Using the aforementioned geometric characteristics as constraints, the first control block is triggered to project the etched texture from a two-dimensional plane onto a three-dimensional curved surface to perform etch positioning, including: Identify the geometric characteristics, and determine whether to trigger the first control block based on the geometric complexity and surface characteristics; If triggered, the projection plane is determined, wherein the projection plane is a two-dimensional projection plane based on a preset viewpoint of the etched area, and the projection plane and the etched area are established with a positional mapping; Based on the projection plane, the etched texture is geometrically aligned to determine the etching positioning result.

3. The laser etching control method as described in claim 2, characterized in that, Geometric alignment of the etched texture according to the projection plane includes: The etched texture is projected onto the projection plane; Using the key nodes as projection point clouds, the etching texture projected onto the projection plane is mapped to the etching region based on the mapping between the projection plane and the etching region. The projection point cloud is used for geometric alignment to determine the etching positioning result.

4. The laser etching control method as described in claim 1, characterized in that, Constrained by the aforementioned substrate material and microstructure characteristics, multi-axis free linkage under cross-scale integration is performed with space-time truncation, including: A laser etching mode is determined, wherein the laser etching mode includes direct etching and modified etching, and the modified etching includes a first modification stage and a second etching stage; Based on the laser etching mode, multiple sub-control threads are determined by decoupling and truncation of the execution mode, wherein the multiple sub-control threads have peer identifiers and sequential identifiers; For the multiple sub-control threads, based on the microstructure features and constrained by the substrate material, multiple sets of laser parameters are determined; The multiple sub-control threads and the multiple sets of laser parameters are mapped and integrated as the laser etching strategy.

5. The laser etching control method as described in claim 4, characterized in that, Performing truncation and splitting includes: The key node is used as the first cutoff position, and the second cutoff position is determined by the trajectory idle distance. Based on the first cutoff position and the second cutoff position, etch-controlled cutoff segmentation is performed.

6. The laser etching control method as described in claim 4, characterized in that, Driving the laser etching equipment to perform automated laser etching control includes: Using the same-level identifier and the sequential identifier as constraints, for the control axis of the laser etching equipment, thread control allocation is performed based on the laser etching strategy to drive the control axis to perform etching control under self-driven cooperation. Dynamically track the etching process of the control axis to locate idle control axes; Automated laser etching control is performed using continuous tracking and thread control allocation based on idle control axes.

7. The laser etching control method as described in claim 6, characterized in that, After implementing automated laser etching control, the following is included: For the laser etching strategy, a free threshold is set thread by thread; Using the free threshold as a constraint, dynamic tracking is used to monitor and control deviation positioning to determine the rework etching scheme; Based on the same-level identifier and the sequential identifier, add an entry thread for the resuming etching scheme; The cutting-in sub-thread and the rework etching scheme are added to the laser etching strategy.

8. A laser etching control system, characterized in that, The system is used to implement a laser etching control method according to any one of claims 1 to 7, the system comprising: An etching texture adding module is used to add etching textures to the control center of a laser etching device, wherein the etching texture identifier is based on the microstructural features of key nodes; The control block coupling module is used to add a first control block by introducing curved point cloud projection, and to add a second control block by optimizing the multi-axis free linkage mode, and to couple the first control block and the second control block, and is embedded in the control center; The laser etching strategy determination module is used to determine the substrate material and geometric characteristics of the substrate part to be etched. With the geometric characteristics as constraints, the first control block is triggered to project the etching texture from the two-dimensional plane to the three-dimensional curved surface to perform etching positioning. With the substrate material and microstructure features as constraints, multi-axis free linkage under cross-scale integration is performed with space truncation to determine the laser etching strategy. The laser etching control module is used to drive the laser etching equipment to perform automated laser etching control according to the laser etching strategy.

9. An electronic device, characterized in that, The electronic device includes: Memory, used to store executable instructions; A processor, when executing executable instructions stored in the memory, implements the laser etching control method according to any one of claims 1-7.

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