Semiconductor growth apparatus

Abstract

The application provides a semiconductor growth equipment, which comprises a process cavity, a susceptor, a gas delivery device, a supporting sleeve, a top cover, a pressing assembly and an upper rotary driving device; the gas delivery device is arranged in the process cavity; the supporting sleeve is arranged in the gas delivery device in a dynamic sealing mode and extends out at the top; the upper rotary driving device is located outside the process cavity and connected with the top of the supporting sleeve; the top cover is arranged on the top of the supporting sleeve to form an adjusting chamber; the pressing assembly extends into the adjusting chamber at the top, penetrates through the supporting sleeve from the top of the supporting sleeve, and is movably arranged in the supporting sleeve in a plug-in mode, so that the pressing assembly can rotate with the supporting sleeve and move towards or away from the susceptor relative to the supporting sleeve; the pressing assembly also movably penetrates through the gas delivery device, and the bottom is provided with a pressure head structure which is detachably and fixedly connected with a pressure bearing structure on the susceptor, so as to provide a pressing force for the susceptor and rotate synchronously. The application is beneficial to improving the stability of the susceptor during rotation, thereby being beneficial to the uniformity of film formation.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and more particularly to a semiconductor growth apparatus. Background Technology

[0002] Semiconductor growth equipment is an important piece of semiconductor manufacturing equipment. It grows semiconductor material layers, such as epitaxial layers, by introducing specific process gases into a reaction chamber and causing them to react on the surface of a heated substrate.

[0003] To achieve uniform growth of semiconductor material layers, semiconductor growth equipment commonly employs a bottom-driven rotating substrate technology. The substrate supporting the wafer is driven to rotate during the process, resulting in a more uniform distribution of process gases on the substrate surface. Therefore, the rotational stability of the substrate becomes one of the key factors affecting the uniformity of the semiconductor material layer.

[0004] However, since the mechanism driving the base rotation is located below the base, there is an open reaction space between the base and the gas injection device. Due to unavoidable mechanical installation constraints, and the significant temperature difference between the high process temperature and the relatively low standby temperature, the mechanical structure exhibits significant thermal expansion and contraction. As a result, the base is prone to shaking in the direction of rotation and away from the gas injection device, thus affecting the stability of rotation. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor growth apparatus that improves the stability of the substrate during rotation, thereby improving the uniformity of film formation.

[0006] To achieve the above objectives, the semiconductor growth apparatus of the present invention includes: The process cavity and the base located within the process cavity and rotatably supported by the bottom of the process cavity, wherein the top surface of the base is provided with a pressure-bearing structure; A gas delivery device is provided in the process cavity and extends toward the top surface of the base. It has several gas supply channels inside, and each gas supply channel communicates with the process cavity through the side wall of the gas delivery device. The support sleeve is installed inside the gas conveying device in a dynamic sealing manner and extends out from the top. A top cover is provided on the top of the support sleeve to form an adjustment chamber; An upper rotary drive device is located outside the process chamber and connected to the top of the support sleeve, so as to keep the gas delivery device stationary during the rotation of the support sleeve and the top cover. The clamping component extends into the adjustment chamber at its top, passes through the support sleeve from the top of the support sleeve, and is movably disposed with the support sleeve in an insert manner so that it can rotate with the support sleeve and move toward or away from the base relative to the support sleeve. The clamping assembly passes through the support sleeve and also moves through the gas conveying device. The bottom is provided with a pressure head structure that is detachably and fixedly connected to the pressure-bearing structure to provide clamping force to the base and rotate synchronously.

[0007] Preferably, the clamping assembly includes a lower shaft section and an upper shaft section connected to each other. The upper shaft section is disposed on the top surface of the lower shaft section and its top extends into the adjustment chamber. The top surface of the lower shaft section is also provided with a plurality of branch pipe structures surrounding the upper shaft section. The support sleeve is sleeved outside the upper shaft section, and each of the branch pipe structures is movably disposed in the support sleeve by insertion through the bottom of the support sleeve.

[0008] Preferably, the gas delivery device includes a lower sleeve penetrating the process chamber and an upper sleeve connected to the top of the lower sleeve; the lower sleeve is provided with each of the gas supply channels; the top of the support sleeve penetrates through the upper sleeve and extends out; the support sleeve is inserted into the upper sleeve in a dynamic sealing manner or inserted into the lower sleeve after penetrating the upper sleeve; the lower shaft section is dynamically sealed with the lower sleeve and / or the upper sleeve, and its bottom penetrates through the lower sleeve.

[0009] Preferably, the support sleeve is provided with an airflow channel and is connected to each of the branch pipe structures.

[0010] Preferably, the base is provided with a driving gas delivery channel to provide driving gas for the rotation of the supported substrate, the upper sleeve is provided with a driving gas supply channel, the guiding gas channel includes an annular groove extending from the bottom surface of the support sleeve toward the top and surrounding the upper shaft section, the annular groove communicating with the driving gas supply channel, the lower shaft section and the pressure head structure are provided with at least one shaft section guiding gas channel communicating with the driving gas delivery channel, the shaft section guiding gas channel communicating with the guiding gas channel through the interior of the branch pipe structure.

[0011] Preferably, the clamping assembly includes an upper shaft section, a limiting structure, and an elastic element; the top of the upper shaft section penetrates the support sleeve and extends into the adjustment chamber; the limiting structure is located within the adjustment chamber and surrounds the top sidewall of the upper shaft section to limit the extreme position of the upper shaft section's descent; the elastic element is located within the adjustment chamber, surrounds the top of the upper shaft section with a gap, one end abuts against the top cover to be in a compressed state and provide the clamping force, and the other end is disposed at the limiting structure so as not to interfere with the upper shaft section's movement during rotation.

[0012] Preferably, when the pressure head structure is connected to the pressure-bearing structure, the limiting structure is suspended in the adjustment chamber to avoid motion interference.

[0013] Preferably, the support sleeve has an axial through-channel communicating with the adjustment chamber, and the upper shaft section passes through the axial through-channel; the outer diameter of the limiting structure is larger than the inner diameter of the axial through-channel to limit the extreme position of the descent of the upper shaft section.

[0014] Preferably, one end of the elastic element is movably abutted or fixedly connected to the top cover, and the other end is movably abutted to the limiting structure; Preferably, one end of the elastic element is fixedly connected to the limiting structure, and the other end is movably abutting against the top cover.

[0015] Preferably, the semiconductor growth apparatus further includes a preload adjustment component, which is disposed through and dynamically sealed in the top cover, with its bottom abutting against the top of the elastic member.

[0016] Preferably, the preload adjustment assembly includes an adjustment support plate and an adjustment drive; the adjustment support plate is disposed in the adjustment chamber and abuts against the top end of the elastic member; the adjustment drive is disposed through and dynamically sealed in the top cover to move toward or away from the adjustment support plate, and extends to the adjustment chamber at the bottom and is connected to the adjustment support plate.

[0017] Preferably, the semiconductor growth apparatus further includes a sealing cover that houses the top cover and the preload adjustment assembly and is detachably and sealingly connected to the support sleeve to enhance the sealing effect.

[0018] Preferably, the material of the pressure head structure is the same as that of the base, which is beneficial to the temperature uniformity of the base.

[0019] Preferably, the semiconductor growth apparatus further includes a rotating component and a base shaft; the base shaft passes through the bottom of the process cavity and is located at the bottom of the base; the rotating component is located outside the process cavity, dynamically sealed at the bottom of the process cavity, and rotatably connected to the base shaft to drive the base to rotate.

[0020] Preferably, the semiconductor growth apparatus further includes a rotation control device, the rotation assembly including a lower rotation drive device to provide rotational driving force, and both the lower rotation drive device and the upper rotation drive device are communicatively connected to the rotation control device.

[0021] The beneficial effects of the semiconductor growth apparatus of the present invention are as follows: This application utilizes a support sleeve with an upper rotary drive device located outside the top of the process chamber. The support sleeve is dynamically sealed within the gas delivery device, and its top is fitted with a cover forming an adjustment chamber. A pressing assembly extends into the adjustment chamber from the top of the support sleeve, penetrating it and being movably inserted into it to rotate with the support sleeve and move relative to it toward or away from the base. The pressing assembly also movably penetrates the gas delivery device after penetrating the support sleeve and is detachably fixedly connected to the pressure-bearing structure on the top surface of the base to provide pressing force and rotate synchronously with it. Thus, while driving the base to rotate via the upper rotary drive device, it also provides pressing force. Combined with the base being rotated and supported at the bottom of the process chamber, the base is also stabilized at the bottom, which improves the stability of the base during rotation and thus contributes to film uniformity. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the pressure head structure and the pressure-bearing structure in a compressed state in the semiconductor growth equipment of an embodiment of the present invention; Figure 2 This is a schematic diagram showing the pressure head structure and the pressure-bearing structure in a separated state in the semiconductor growth apparatus of an embodiment of the present invention; Figure 3 This is a schematic diagram of the gas delivery device, support sleeve, top cover, clamping assembly, and upper rotation drive device in the semiconductor growth apparatus of this invention. Figure 4 This is a schematic diagram of the top cover and clamping assembly in the semiconductor growth apparatus according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the clamping assembly in the semiconductor growth apparatus according to an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of the clamping component, gas delivery device, and cover plate in the semiconductor growth equipment according to an embodiment of the present invention; Figure 7 This is a schematic diagram of the structure of the base in the semiconductor growth apparatus according to an embodiment of the present invention; Figure 8 This is a schematic diagram of the preload adjustment component and elastic element in the semiconductor growth apparatus of this invention.

[0023] Explanation of reference numerals in the attached figures: 1. Process chamber; 11. Cover plate; 2. Base; 21. Pressure-bearing structure; 22. Substrate; 23. Placement slot; 24. Driving gas conveying channel; 3. Gas conveying device; 31. Gas supply channel; 32. Gas outlet; 33. Spray section; 34. Lower sleeve; 35. Upper sleeve; 36. Driving gas supply channel; 4. Support sleeve; 41. Air guide channel; 5. Top cover; 51. Adjustment chamber; 6. Pressing assembly; 61. Press head structure; 62. Lower shaft section; 63. Upper shaft section; 64. Branch pipe structure; 65. Shaft section air guide channel; 66. Elastic element; 67. Limiting structure; 7. Upper rotation drive device; 71. Drive motor; 72. Synchronous pulley; 8. Preload adjustment assembly; 81. Adjusting bearing plate; 82. Adjusting drive component; 9. Base shaft. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0025] To overcome the problems existing in the prior art, the present invention provides a semiconductor growth apparatus that is beneficial to improving the stability of the substrate during rotation, thereby improving the uniformity of film formation.

[0026] In some embodiments, reference is made to Figures 1 to 8The semiconductor growth equipment includes a process chamber 1, a base 2, a gas delivery device 3, a support sleeve 4, a top cover 5, a clamping assembly 6, and an upper rotation drive device 7. The base 2 is located inside the process chamber 1 and is rotatably supported by the bottom of the process chamber 1. The base 2 includes a bearing surface to support a substrate 22, and the top surface of the base 2, i.e., the bearing surface, is provided with a pressure-bearing structure 21. The gas delivery device 3 is located in the process chamber 1, extending towards the top surface of the base 2, and has several gas supply channels 31 inside. Each gas supply channel 31 communicates with the process chamber 1 through the side wall of the gas delivery device 3. The upper rotation drive device 7 is located outside the process chamber 1 and connected to the top of the support sleeve 4. The support sleeve 4 is located inside the gas delivery device 3 in a dynamically sealed manner, and its top... The upper rotating drive device 7 extends, and during the rotation of the support sleeve 4, the gas conveying device remains stationary. The top cover 5 is located on the top of the support sleeve 4 to form an adjustment chamber 51. The top of the pressing assembly 6 extends into the adjustment chamber 51. The pressing assembly 6 passes through the support sleeve 4 from the top and is movably installed between the pressing assembly 6 and the support sleeve 4 in an insert manner, so that it can rotate with the support sleeve 4 and move relative to the support sleeve 4 toward or away from the base 2. After passing through the support sleeve 4, the pressing assembly 6 also movably passes through the gas conveying device 3. The bottom of the pressing assembly 6 is provided with a pressure head structure 61 that is detachably and fixedly connected to the pressure bearing structure 21 to provide a pressing force to the base 2 and rotate synchronously.

[0027] In this application, the pressure head structure 61 is located between the gas conveying device 3 and the base 2. The pressure head structure 61 of the clamping assembly 6 is detachably and fixedly connected to the pressure-bearing structure 21 in the base 2 and provides clamping force. This allows the clamping assembly 6 to provide a top-down clamping force to the base 2, thus maintaining a detachable and fixed connection between the pressure head structure 61 and the pressure-bearing structure 21. Figure 1 As shown, after the process chamber 1 is closed, the pressure head structure 61 in the clamping assembly 6 presses down and its bottom is in contact with the pressure-bearing structure 21 of the base 2. Under the action of the clamping force, it remains in a pressed state with the base 2. During the process, the upper rotation drive device 7 drives the support sleeve 4 to rotate the clamping assembly 6, which in turn drives the base 2 to rotate through the pressure head structure 61, and can provide a certain clamping force to the base 2, so that the rotation of the base 2 meets the process requirements and can ensure process stability. At this time, the top of the pressure head structure 61 is spaced apart from the bottom of the gas conveying device 3 under the action of the clamping force, that is, the pressure head structure 61 is suspended at the bottom of the gas conveying device 3. This avoids the gas conveying device 3 interfering with the pressure head structure 61 and affecting the rotation of the clamping assembly 6.

[0028] like Figure 2 As shown, after the process chamber 1 is opened, the gas delivery device 3 rises to separate the pressing assembly 6 from the base 2. The pressing head structure 61 no longer exerts pressure on the base 2, and the pressing head structure 61 separates from the pressure-bearing structure 21, leaving operating space for the robot to remove the wafer from the base 2. The pressing head structure 61 and the base 2 are pressed or detached automatically with the installation or opening of the gas delivery device 3. That is, the pressing head structure 61 and the pressure-bearing structure 21 of the base 2 are detachably connected, so that the pressing head structure 61 is pressed down and locked before the process, and the pressing head structure 61 is raised and released after the process. This is suitable for automation systems and makes the replacement, cleaning and other maintenance operations of the base 2 or the pressing head structure 61 itself more convenient, reducing equipment downtime.

[0029] This application places the drive source, i.e., the upper rotary drive device 7, on the protruding top of the support sleeve 4 outside the top of the process chamber 1. The support sleeve 4 is dynamically sealed inside the gas conveying device 3, and its top is provided with a top cover 5 that surrounds the adjustment chamber 51. The top of the pressing assembly 6 extends into the adjustment chamber 51, penetrates the support sleeve 4 from the top, and is movably installed with the support sleeve 4 in an insert manner, so that it can rotate with the support sleeve 4 and move relative to the support sleeve 4 toward or away from the base 2. After penetrating the support sleeve 4, the pressing assembly 6 also movably penetrates the gas conveying device 3 and is attached to the top surface of the base 2. The pressure structure 21 is detachably fixedly connected to provide a clamping force to the base 2 and rotate synchronously. Thus, when the support sleeve 4 is driven by the upper rotation drive device 7 and the entire clamping assembly 6 (including the pressure head structure 61) is rotated, the pressure head structure 61 can drive the base 2 to rotate under the clamping force of the pressure bearing structure 21 on the base 2. Moreover, while driving the base 2 to rotate by the upper rotation drive device 7, it can also provide a clamping force to the base 2. Combined with the rotational support of the base 2 at the bottom of the process cavity 1, the bottom of the base 2 can also play a stabilizing role, which is conducive to improving the stability of the base 2 during rotation, thereby achieving film uniformity.

[0030] The clamping component 6 is movably disposed with the support sleeve 4 via an insertion method, so that while rotating with the support sleeve 4, the clamping component 6 can move relative to the support sleeve 4 toward or away from the base 2. In some embodiments, the clamping component 6 and the support sleeve 4 are fitted with a dynamic seal, allowing the clamping component 6 to move relative to the support sleeve 4 toward or away from the base 2 without affecting the airtightness.

[0031] In some embodiments, the top cover 5 is sealed on the top of the support sleeve 4. The top cover 5 rotates with the support sleeve 4, and a sealed adjustment chamber 51 is formed by the top cover 5 and the top of the support sleeve 4 to enhance airtightness. Furthermore, even if there is a gap between the pressing assembly 6 and the support sleeve 4, the sealed adjustment chamber 51 can still enhance airtightness.

[0032] In some embodiments, reference is made to Figures 1 to 3 The upper rotation drive device 7 includes a drive motor 71 and a synchronous wheel 72 that is connected to the drive motor 71. The synchronous wheel 72 is sleeved on the top of the support sleeve 4. The drive motor 71 drives the synchronous wheel 72 to rotate, thereby driving the support sleeve 4 to rotate.

[0033] In some embodiments, reference is made to Figures 1 to 5 The clamping assembly 6 includes a lower shaft section 62 and an upper shaft section 63 connected to each other. The upper shaft section 63 is located on the top surface of the lower shaft section 62, and the top of the upper shaft section 63 extends away from the lower shaft section 62 until it enters the adjustment chamber 51. The support sleeve 4 is sleeved on the upper shaft section 63. The top surface of the lower shaft section 62 is also provided with a plurality of branch pipe structures 64 surrounding the upper shaft section 63. Each branch pipe structure 64 is movably installed in the support sleeve 4 through the bottom surface of the support sleeve 4 in an insert manner. This not only allows the movement of the upper shaft section 63 toward the base 2 to drive the lower shaft section 62 toward the base 2, but more importantly, through the cooperation of each branch pipe structure 64 and the support sleeve 4, the support sleeve 4 can also drive the upper shaft section 63 and the lower shaft section 62 to rotate.

[0034] In some embodiments, the branch pipe structures 64 are evenly distributed around the upper shaft section 63, which is beneficial to rotational stability.

[0035] In some embodiments, the upper shaft segment 63 and the lower shaft segment 62 constitute a rotating shaft, the bottom of which is connected and fixed to the pressure head structure 61.

[0036] In some specific embodiments, the upper shaft section 63, the lower shaft section 62, and the pressure head structure 61 are an integral structure.

[0037] In other specific embodiments, the upper shaft section 63, the lower shaft section 62, and the pressure head structure 61 are detachable and assembled, or the upper shaft section 63 and the lower shaft section 62 are an integrated structure and the pressure head structure 61 is a separate structure, or the upper shaft section 63 is a separate structure and the lower shaft section 62 and the pressure head structure 61 are an integrated structure. This facilitates adaptive replacement according to maintenance needs, different selections of the base 2, and structural changes of the pressure-bearing structure 21 provided thereon, thereby improving universality.

[0038] In some embodiments, reference is made to Figures 1 to 3The gas delivery device 3 includes a lower sleeve 34 that penetrates the process chamber 1, and an upper sleeve 35 connected to the top of the lower sleeve 34; the lower sleeve 34 is provided with each of the gas supply channels 31; the upper sleeve 35 and the lower sleeve 34 can be an integrated structure or a separate structure. The separate design facilitates disassembly and maintenance.

[0039] In some embodiments, reference is made to Figures 1 to 3 , Figure 6 The process cavity 1 includes a top cover plate 11, and the lower sleeve 34 passes through the cover plate 11 and extends into the process cavity 1. The specific installation method of the lower sleeve 34 and the process cavity 1, as well as the specific structure of the cover plate 11 and the process cavity 1, are common knowledge in the field and will not be described in detail here, as it is necessary to ensure the sealing performance of the process cavity 1.

[0040] In some embodiments, reference is made to Figures 1 to 5 The top of the support sleeve 4 extends through the upper sleeve 35 and protrudes out. The support sleeve 4 is inserted into the upper sleeve 35 in a dynamic sealing manner or inserted into the lower sleeve 34 after passing through the upper sleeve 35.

[0041] In some embodiments, the support sleeve 4 may also extend to the upper sleeve 35.

[0042] In some embodiments, reference is made to Figures 1 to 3 The lower shaft section 62 is dynamically sealed to the lower sleeve 34 and / or the upper sleeve 35, and its bottom extends through the lower sleeve 34 to connect and fix to the pressure head structure 61 located between the lower sleeve 34 and the base 2. The clamping force is transmitted to the pressure head structure 61 and the base 2 through the lower shaft section 62. The dynamic seal between the lower shaft section 62 and the lower sleeve 34 and / or the upper sleeve 35 allows for axial movement of the lower shaft section 62 relative to the lower sleeve 34 and / or the upper sleeve 35 while also reducing or avoiding the risk of gas leakage from the assembly space between them, ensuring good sealing of the process chamber 1.

[0043] In some embodiments, reference is made to Figures 1 to 5 The support sleeve 4 is provided with an airflow channel 41 and is connected to each of the branch pipe structures 64. This allows the gas in the airflow channel 41 to be guided into the branch pipe structure 64, realizing the dual functions of mechanical connection and fluid transport.

[0044] In some embodiments, reference is made to Figures 1 to 7The base 2 is provided with a driving gas delivery channel 24 to provide driving gas for the rotation of the supported substrate 22. The upper sleeve 35 is provided with a driving gas supply channel 36. The air guide channel 41 includes an annular groove extending from the bottom surface of the support sleeve 4 toward the top and surrounding the upper shaft section 63. The annular groove communicates with the driving gas supply channel 36. The lower shaft section 62 and the pressure head structure 61 are provided with at least one shaft section air guide channel 65 communicating with the driving gas delivery channel 24. The shaft section air guide channel 65 communicates with the air guide channel 41 through the interior of the branch pipe structure 64. This allows for the construction of an externally controllable and internally integrated gas channel within the upper sleeve 35, support sleeve 4, lower shaft section 62, and pressure head structure 61. This channel enables gas to be transported from outside the equipment, via the drive gas supply channel 36 within the stationary upper sleeve 35, to the guide gas channel 41 within the rotating support sleeve 4, and finally directly to the drive gas delivery channel 24 via the shaft section guide gas channel 65. Furthermore, this gas channel (drive gas supply channel 36, guide gas channel 41, and shaft section guide gas channel 65) fully utilizes the structural space within the equipment, improving equipment integration, resulting in a compact structure and high space utilization.

[0045] In some embodiments, reference is made to Figures 1 to 7 The shaft section airflow channel 65 within the pressure head structure 61 is connected to the shaft section airflow channel 65 within the lower shaft section 62 in a one-to-one correspondence. The base 2 has a placement groove 23 for supporting the substrate 22 and a driving gas delivery channel 24 connected to the placement groove 23. The bottom end of the shaft section airflow channel 65 within the pressure head structure 61 is connected to the driving gas delivery channel 24. That is, the driving gas supply channel 36, the airflow channel 41, the shaft section airflow channel 65, and the driving gas delivery channel 24 are sequentially connected to form a driving gas path, used to introduce driving gas into the placement groove 23, so as to drive the tray supporting the substrate 22 to rotate through airflow. The specific implementation of the driving gas delivery channel 24 is a conventional technique in the art.

[0046] When the pressure head structure 61 is pressed against or disengaged from the base 2, and when the axial pressing force on the base 2 is set or adjusted, the pressing assembly 6 will move toward or away from the base 2. That is, the upper shaft section 63 moves up and down within the support sleeve 4, and the lower shaft section 62 moves toward or away from the base 2. In some embodiments, refer to Figures 1 to 6 The extension length of the airflow guide channel 41 is greater than the extension length of the branch pipe structure 64 to ensure that the branch pipe structure 64 remains in the airflow guide channel 41 throughout the entire adjustment stroke and does not come out, thereby maintaining a continuous fluid passage between the branch pipe structure 64 and the airflow guide channel 41. Moreover, the mating interface between the branch pipe structure 64 and the airflow guide channel 41 is crucial for transmitting rotational torque.

[0047] In some embodiments, the inner wall of the branch structure 64 and the outer wall of the corresponding airflow channel 41 are attached to each other and can move relative to each other, which also maximizes the airtightness of the joint.

[0048] In some embodiments, reference is made to Figures 1 to 3 ,as well as Figure 6 Each of the gas supply channels 31 communicates with the outside of the process cavity 1 via the side wall of the lower sleeve 34, allowing process gas to be introduced through the side wall of the lower sleeve 34 fixed to the top of the process cavity 1. Furthermore, each of the gas supply channels 31 is arranged around the area where the pressing assembly 6 is located, and the gas is ejected through the air outlet 32 ​​on the side wall of the lower sleeve 34, flowing through the substrate 22 in a laminar flow manner. The specific implementation method for controlling the laminar flow is a conventional technique in the art.

[0049] In some specific embodiments, reference is made to Figures 1 to 3 , Figure 6 The lower sleeve 34 has a plurality of spray sections 33 on its sidewalls. Further, each spray section 33 is an annular spray section 33 arranged circumferentially along the lower sleeve 34, or multiple spray sections 33 are spaced apart circumferentially along the lower sleeve 34 to form an annular spray section 33. The gas supply channel 31 has a plurality of channels for introducing different process gases or purge gases, and each gas supply channel 31 is connected to at least one spray section 33 for supplying process gases or purge gases to the spray section 33. Each spray section 33 includes a plurality of outlets 32 for spraying process gases or purge gases into the process chamber 1.

[0050] In some embodiments, reference is made to Figures 1 to 4 The top of the clamping assembly 6 is located inside the adjustment chamber 51 and elastically abuts against the top cover 5 to provide clamping force to the pressure-bearing structure 21.

[0051] In this embodiment, the top of the clamping component 6 elastically abuts against the top cover 5, enabling it to provide axial clamping force to the base 2, ensuring that the clamping force can act stably and reliably on the base 2. Moreover, the elastic abutment method can avoid stress concentration or loosening that may be caused by rigid connection. Furthermore, during the rotation of the base 2, the elasticity can be automatically adjusted within a certain range according to the vibration of the base 2 (especially the axial vibration), to ensure that the applied clamping force is conducive to stable rotation and will not have an adverse effect on the rotation of the base 2 that does not meet the process requirements. Specifically, the component that provides the elastic abutment function on the clamping component 6 can be reasonably selected and adapted according to the rotation speed of the base 2, process requirements, and structural adaptation characteristics between the clamping component 6 and the base 2, and the compression degree of the component can be selected to achieve a suitable clamping force.

[0052] The top of the pressing component 6 is located in the sealed regulating chamber 51 of the top cover 5, so that the movement of the pressing component 6 is not likely to interfere with the gas supply channel 31 and the drive gas supply channel 36 in the gas conveying device 3, thereby ensuring the stability of the process airflow and the drive airflow.

[0053] The upper sleeve 35 and the lower sleeve 34 can be separate structures, which allows for flexible replacement of the lower sleeve 34 with different air supply channels 31 designs, or replacement of the top cover 5 or the clamping assembly 6 that provides different clamping forces and strokes, without having to redesign the entire structure.

[0054] In some embodiments, reference is made to Figures 1 to 5 The clamping assembly 6 includes an upper shaft section 63, a limiting structure 67, and an elastic element 66. The top of the upper shaft section 63 penetrates the support sleeve 4 and extends into the adjustment chamber 51. The limiting structure 67 is located in the adjustment chamber 51 and surrounds the top sidewall of the upper shaft section 63 to limit the extreme position of the descent of the upper shaft section 63. The elastic element 66 is located in the adjustment chamber 51, surrounds the top of the upper shaft section 63 and has a gap. One end of the elastic element 66 abuts against the top cover 5 to be in a compressed state and provide the clamping force, and the other end is provided in the limiting structure 67 so that it will not interfere with the movement of the upper shaft section 63 during rotation.

[0055] In this embodiment, the pressing assembly 6 is movably disposed in the gas conveying device 3. When the pressing head structure 61 separates from the pressure-bearing structure 21 on the base 2, the pressing head structure 61 will, due to its gravity, cause the tension at the top of the pressing assembly 6 to become relatively loose, that is, the distance between the pressing head structure 61 and the bottom of the lower sleeve 34 increases. The limiting structure 67, together with the top of the upper shaft section 63 enclosed by it, moves toward the direction of the pressing head structure 61 until the limiting structure 67 descends to its limit position. The limiting structure 67 plays a limiting role to prevent the pressing head structure 61 from causing the upper shaft section 63 to directly detach from the support sleeve 4, and the lower shaft section 62 to directly detach from the lower sleeve 34.

[0056] After the process chamber 1 is closed, the pressure head structure 61 abuts against the bearing surface of the base 2. The base 2 exerts an axial upward supporting force on the pressure head structure 61, causing it to move axially upward appropriately. At the same time, the elastic element 66 applies an axial downward clamping force to the upper shaft section 63, the lower shaft section 62, and the pressure head structure 61. Under the combined action of the clamping force and the supporting force, the pressure head structure 61 is finally suspended at the bottom of the gas conveying device 3, i.e., the lower sleeve 34. This avoids the lower sleeve 34 interfering with the pressure head structure 61 and affecting the rotation of the clamping assembly 6 with the base 2.

[0057] In this embodiment, an elastic element 66 surrounds the top of the upper shaft section 63 with a gap. One end of the top of the elastic element 66 abuts against the top cover 5, and the other end is located at the limiting structure 67. This allows the elastic force to be directly converted into an axial downward clamping force acting on the upper shaft section 63. Moreover, during the rotation of the upper shaft section 63, the elastic element 66 will not interfere with the upper shaft section 63. That is, the force source of the elastic force on the elastic element 66 is not in contact with the upper shaft section 63, so that there is no motion interference between the upper shaft section 63 and the force source of the elastic force on the elastic element 66. This avoids the interference affecting the normal rotation of the clamping assembly 6 with the support sleeve 4. At the same time, the elastic element 66 can also buffer the vibration that may be generated by the rotation of the base 2. The upper shaft section 63 serves as a rigid connector. Its bottom is fixed to the pressure head structure 61 via the lower shaft section 62, while its top receives the elastic force transmitted by the limiting structure 67. The lower shaft section 62 and the pressure head structure 61 then provide clamping force to the base 2. This results in a short force transmission path, minimal force loss, and direct response, ensuring the effective utilization of the clamping force. The limiting structure 67 surrounds the top sidewall of the upper shaft section 63, limiting the extreme positions of the descent of the upper shaft section 63 and the pressure head structure 61. This prevents the upper shaft section 63 from detaching from the support sleeve 4 and the lower shaft section 62 connected to the upper shaft section 63 from detaching from the gas conveying device 3 when the clamping assembly 6 is not under stress.

[0058] In some embodiments, reference is made to Figure 1 When the pressure head structure 61 is connected to the pressure-bearing structure 21, the limiting structure 67 is suspended within the adjusting chamber 51 to avoid motion interference, that is, to prevent the limiting structure 67 from interfering with the top cover 5 and the support sleeve 4, thus affecting the normal rotation of the clamping assembly 6 with the support sleeve 4. When the pressure head structure 61 is pressed down to abut against the pressure-bearing structure 21 (i.e., the working position), there is a gap between the limiting structure 67 and the inner wall of the top cover 5 and the support sleeve 4. Moreover, in the working position, the limiting structure 67 is suspended, which also ensures that the clamping force provided by the elastic element 66 can be more effectively transmitted to the base 2 through the clamping assembly 6.

[0059] In some embodiments, reference is made to Figure 1 When the pressure head structure 61 is connected to the pressure-bearing structure 21, there is a gap between the inner wall of the top cover 5 and the structure of the upper shaft section 63 extending into the adjustment chamber 51, so as to avoid the problem that the upper shaft section 63 and the top cover 5 will abut against each other when the pressure head structure 61 and the pressure-bearing structure 21 of the base 2 come into pressure contact, which will affect the normal rotation of the base 2.

[0060] In some embodiments, reference is made to Figures 1 to 3When the pressure head structure 61 is connected to the pressure bearing structure 21, the distance between the top of the top cover 5 and the base 2 is greater than the total axial length of the pressing assembly 6, so as to ensure that there is a distance between the upper shaft section 63 and the top cover 5, so as to avoid the upper shaft section 63 and the top of the top cover 5 rigidly resisting each other when the pressure head structure 61 and the base 2 are pressed together, ensuring that the upper shaft section 63 can rotate freely, and ensuring that the elastic element 66 can provide a continuous and stable axial pressing force to the pressure head structure 61.

[0061] In some embodiments, reference is made to Figures 1 to 3 The support sleeve 4 has an axial through-channel communicating with the adjustment chamber 51, and the upper shaft section 63 passes through the axial through-channel. The outer diameter of the limiting structure 67 is larger than the inner diameter of the axial through-channel to limit the extreme position of the descent of the upper shaft section 63, preventing the pressure head structure 61 from being damaged by collision due to excessive descent, or from detaching from the support sleeve 4. Moreover, there is no need to arrange an additional independent limit switch or stop block in the adjustment chamber 51, and the structure is simple and compact.

[0062] In some embodiments, the limiting structure 67 is a flange or retaining ring, which is fixedly sleeved on the upper shaft section 63.

[0063] In some specific embodiments, reference is made to Figures 1 to 3 The limiting structure 67 is ring-shaped and is sleeved on the top of the upper shaft segment 63.

[0064] In some embodiments, reference is made to Figures 1 to 3 The lower sleeve 34 has a lower axial through channel communicating with the axial through channel; the bottom end of the support sleeve 4 is inserted into the lower axial through channel; the outer diameter of the lower shaft section 62 is larger than the outer diameter of the upper shaft section 63, and the lower shaft section 62 is rotatably fitted into the lower axial through channel in a dynamic sealing manner; the upper shaft section 63 passes through the axial through channel from the bottom of the support sleeve 4 and extends into the adjustment chamber 51. This ensures that the rotating shaft (i.e., the upper shaft section 63 and the lower shaft section 62) can drive the base 2 to rotate without affecting the sealing of the process chamber 1.

[0065] In some embodiments, the support sleeve 4 is provided with a precision bushing or bearing, and the upper shaft section 63 is movably sleeved in the bushing or bearing.

[0066] In some embodiments, the gas delivery device 3 further includes a bearing, which is fixedly sleeved in the lower axial through-channel. The lower shaft section 62 passes through the bearing and forms a dynamic seal with the inner ring of the bearing, so that the gas delivery device 3 remains stationary while the lower shaft section 62 drives the base 2 to rotate, and does not affect the sealing of the process chamber 1.

[0067] In some specific embodiments, the elastic element 66 is a spring.

[0068] In some embodiments, by selecting elastic elements 66 of different specifications, the magnitude of the clamping force can be precisely designed and adjusted to meet the needs of different types of bases 2, rotation speeds, or process vibration environments.

[0069] In some embodiments, reference is made to Figures 1 to 3 One end of the elastic element 66 is movably abutted or fixedly connected to the top cover 5, and the other end is movably abutted to the limiting structure 67, that is, the definite moving point is set near the actuating end (limiting structure 67). In other embodiments, one end of the elastic element 66 is fixedly connected to the limiting structure 67, and the other end is movably abutted to the top cover 5, which facilitates maintenance or replacement of the elastic element 66 by disassembling and assembling the top cover 5, and reduces or even avoids the impact of axial torque on the output of appropriate clamping force.

[0070] In some embodiments, not only is the elastic element 66 in a compressed state to provide clamping force when the pressure head structure 61 and the pressure bearing structure 21 are detachably connected, but the elastic element 66 remains in a compressed state after the connection between the pressure head structure 61 and the pressure bearing structure 21 is released. This allows the elastic element 66 to remain stable relative to the top cover, preventing motion interference between it and the upper shaft section 63 of the clamping assembly 6 due to displacement caused by excessive extension. Specifically, during the installation of the upper shaft section 63, the lower shaft section 62, and the elastic element 66, pre-tightening is applied to the elastic element 66, ensuring that the outer wall of the upper shaft section 63 fits against the inner wall of the support sleeve 4, and that the outer wall of the lower shaft section 62 fits against the inner wall of the lower sleeve 34 through which it passes. The degree of fit is controlled to maintain the pre-tightening of the elastic element 66 even when the connection between the pressure head structure 61 and the pressure bearing structure 21 is disengaged. When the pressure head structure 61 and the pressure bearing structure 21 are detachably connected, the shaft sections can move relative to each other, thereby increasing the compression degree of the elastic element 66.

[0071] The magnitude of the clamping force affects the degree of contact between the base 2 and the pressure head structure 61, thus affecting the rotational dynamic characteristics. Furthermore, different process control points (such as temperature, rotational speed, and gas flow control), or different arrangements of the substrates 22 in different sizes and quantities on the base 2, may require different optimal clamping forces to achieve best rotational stability and prevent damage. To enable timely adjustment based on clamping force requirements, in some embodiments, reference is made to… Figure 8 The semiconductor growth apparatus further includes a preload adjustment component 8, which is disposed through and dynamically sealed in the top cover 5, and its bottom abuts against the top of the elastic member 66.

[0072] This embodiment uses an externally operable preload adjustment component 8 to adjust the compression degree of the elastic element 66 without opening the process chamber 1, and to address the problem of insufficient clamping force on the base 2 caused by performance drift. This ensures that the equipment can maintain good clamping performance on the base 2 after multiple process cycles, and enables the equipment to be "softly" adapted to different processes, thus broadening the equipment's process applicability and helping to find and lock in the optimal process window.

[0073] In some embodiments, reference is made to Figure 8 The preload adjustment assembly 8 includes an adjustment support plate 81 and an adjustment drive component 82. The adjustment support plate 81 is disposed within the adjustment chamber 51 and abuts against the top end of the elastic member 66. The adjustment drive component 82 penetrates and is dynamically sealed within the top cover 5 to move toward or away from the adjustment support plate 81, and its bottom extends into the adjustment chamber 51 and connects to the adjustment support plate 81. Specifically, the adjustment drive component 82 drives the adjustment support plate 81 to move axially up and down, thereby adjusting the compression of the elastic member 66 and the clamping force applied to the pressure head structure 61.

[0074] In some embodiments, the adjusting drive 82 is threadedly connected to the top cover 5, so that the adjusting support plate 81 can be driven to move axially up and down by rotating the adjusting drive 82 forward or in reverse, thereby adjusting the compression of the elastic member 66 and the axial clamping force applied to the pressure head structure 61.

[0075] In some specific embodiments, the top cover 5 is provided with a through hole, and the circumferential inner sidewall of the through hole is provided with an internal thread section. The adjusting drive 82 is provided with a plurality of external thread sections that are adapted to the internal thread section along the axial direction. The top cover 5 and the adjusting drive 82 are screwed together by a threaded pair and maintain a dynamic seal.

[0076] In other embodiments, the adjustment drive 82 includes a precision threaded rod, a linear motor push rod, etc.

[0077] In some embodiments, the adjustment drive 82 is equipped with scale markings, digital display markings, or servo control along the axial direction, enabling more intuitive and specific adjustment of the compression amount of the elastic element 66 and the axial clamping force applied to the pressure head structure 61, thus achieving high positioning.

[0078] In some embodiments, the semiconductor growth apparatus further includes a sealing cap that houses the top cover 5 and the preload adjustment assembly 8 and is detachably and sealingly connected to the support sleeve 4 to enhance the sealing effect.

[0079] The connection interface between the top cover 5 and the support sleeve 4, as well as the dynamic sealing point through which the preload adjustment drive 82 penetrates the top cover 5, are potential leakage risk points. In this embodiment, the entire top cover 5 is covered by a sealing cover and externally sealed to the support sleeve 4, which is equivalent to adding an independent, closed secondary sealing cavity outside the original sealing structure, i.e., the top cover 5.

[0080] In some embodiments, the pressure-bearing structure 21 and the pressure head structure 61 are detachably connected by a tongue-and-groove fit. When the pressure head structure 61 is pressed down, the inclined surface or sidewall of the tongue-and-groove fit can automatically guide both to slide into the correct position.

[0081] In some embodiments, the material of the pressure head structure 61 is the same as that of the base 2, in order to improve the temperature uniformity of the base 2.

[0082] In high-temperature epitaxial growth processes, the substrate 2 (e.g., made of graphite) is heated to hundreds or even thousands of degrees Celsius, serving as the primary heat source and heat carrier. The pressure head structure 61, as the component in close contact with and applying pressure, can become a source of thermal interference if its material differs from the substrate 2 (e.g., metal or ceramic) due to their different thermal conductivity, heat capacity, and coefficient of thermal expansion. This embodiment addresses this by using a pressure head structure 61 made of the same material as the substrate 2 (e.g., both are made of graphite), ensuring highly consistent thermophysical behavior when heated and guaranteeing a highly balanced heat exchange.

[0083] Different materials expand at different rates at high temperatures. If the pressure head structure 61 and the base 2 are made of different materials, even if the pressure head structure 61 and the pressure-bearing structure 21 are initially precisely fitted, the difference in expansion after heating will generate huge contact surface shear stress or cause structural bending deformation. This may lead to micro-slippage at the connection interface, compromising alignment accuracy, warping of the pressure head structure 61 or the base 2 itself, and in severe cases, cracks leading to component damage. In this embodiment, the material of the pressure head structure 61 is consistent with the material of the base 2, ensuring synchronous thermal expansion of both, eliminating thermal stress, thereby maintaining the absolute tightness and positioning accuracy of the concave-convex fit connection at high temperatures, improving the long-term mechanical reliability of the pressing assembly 6 in thermal cycling, avoiding fatigue failure, and avoiding any additional stress that may cause changes in the flatness of the base 2, thus protecting the flatness of the substrate 22. Without concerns about thermal mismatch, the equipment can safely operate at higher set temperatures or with faster heating and cooling programs without worrying about excessive interface stress, which is beneficial for developing more advanced material growth processes (such as some wide bandgap semiconductors that require extremely high temperatures) and broadens the process window.

[0084] In some embodiments, reference is made to Figure 1 and Figure 2The semiconductor growth apparatus further includes a rotating component and a base shaft 9; the base shaft 9 passes through the bottom of the process cavity 1 and is located at the bottom of the base 2; the rotating component is located outside the process cavity 1, dynamically sealed at the bottom of the process cavity 1, and rotatably connected to the base shaft 9 to drive the base 2 to rotate.

[0085] The rotating component at the bottom supports the base 2 via the process chamber 1 and provides the driving force for the rotation of the base 2. The specific implementation method is conventional in the art. When the rotating component at the bottom of the process chamber 1 works in conjunction with the aforementioned top pressing component 6 (whether it rotates or not), the base 2 is subjected to a downward pressing force from the top and an upward supporting / driving force from the bottom in the axial direction. In the radial direction, it is also subjected to dual constraints from the top pressure head structure 61 and the pressure bearing structure 21 (such as a concave-convex fit). This provides the base 2 with dynamic rigidity and rotational stability, which is beneficial to improving the stability of the base 2 during rotation and the uniformity of film formation.

[0086] In some embodiments, the semiconductor growth apparatus further includes a rotation control device, the rotation assembly including a lower rotation drive device to provide rotational driving force, and both the lower rotation drive device and the upper rotation drive device 7 are communicatively connected to the rotation control device.

[0087] The rotation control device can perform closed-loop synchronous control of the upper rotation drive device 7 and the lower rotation drive device, so that the rotation speed of the clamping component 6 can be precisely synchronized with the rotation speed of the base 2, so that the base 2 rotates more smoothly.

[0088] In some embodiments, the lower rotation drive device includes a magnetohydrodynamic rotation drive device. The specific implementation of the magnetohydrodynamic rotation drive device and its adaptation to the process cavity 1 and the base shaft 9 are conventional techniques in the art and will not be elaborated further here.

[0089] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor growth apparatus, characterized in that, include: The process cavity and the base located within the process cavity and rotatably supported by the bottom of the process cavity, wherein the top surface of the base is provided with a pressure-bearing structure; A gas delivery device is provided in the process cavity and extends toward the top surface of the base. It has several gas supply channels inside, and each gas supply channel communicates with the process cavity through the side wall of the gas delivery device. The support sleeve is installed inside the gas conveying device in a dynamic sealing manner and extends out from the top. A top cover is provided on the top of the support sleeve to form an adjustment chamber; An upper rotary drive device is located outside the process chamber and connected to the top of the support sleeve, so as to keep the gas delivery device stationary during the rotation of the support sleeve and the top cover. The clamping component extends into the adjustment chamber at its top, passes through the support sleeve from the top of the support sleeve, and is movably disposed with the support sleeve in an insert manner so that it can rotate with the support sleeve and move toward or away from the base relative to the support sleeve. The clamping assembly passes through the support sleeve and also moves through the gas conveying device. The bottom is provided with a pressure head structure that is detachably and fixedly connected to the pressure-bearing structure to provide clamping force to the base and rotate synchronously.

2. The semiconductor growth apparatus according to claim 1, characterized in that: The clamping assembly includes a lower shaft section and an upper shaft section connected to each other. The upper shaft section is located on the top surface of the lower shaft section and its top extends into the adjustment chamber. The top surface of the lower shaft section is also provided with a plurality of branch pipe structures surrounding the upper shaft section. The support sleeve is fitted outside the upper shaft section, and each of the branch pipe structures is movably installed inside the support sleeve by insertion through the bottom of the support sleeve.

3. The semiconductor growth apparatus according to claim 2, characterized in that, The gas delivery device includes a lower sleeve that penetrates the process chamber and an upper sleeve that is connected to the top of the lower sleeve. The lower sleeve is provided with each of the aforementioned air supply channels; The top of the support sleeve extends through the upper sleeve and protrudes out; The support sleeve is inserted into the upper sleeve in a dynamic sealing manner or inserted into the lower sleeve after penetrating the upper sleeve. The lower shaft section is dynamically sealed to the lower sleeve and / or the upper sleeve, and its bottom extends through the lower sleeve.

4. The semiconductor growth apparatus according to claim 3, characterized in that, The support sleeve is provided with an airflow channel and is connected to each of the branch pipe structures.

5. The semiconductor growth apparatus according to claim 4, characterized in that, The base is provided with a driving gas delivery channel to provide driving gas for the rotation of the supported substrate. The upper sleeve is provided with a driving gas supply channel. The guiding gas channel includes an annular groove extending from the bottom surface of the support sleeve toward the top and surrounding the upper shaft section. The annular groove communicates with the driving gas supply channel. The lower shaft section and the pressure head structure are provided with at least one shaft section guiding gas channel communicating with the driving gas delivery channel. The shaft section guiding gas channel communicates with the guiding gas channel through the interior of the branch pipe structure.

6. The semiconductor growth apparatus according to claim 1, characterized in that, The clamping assembly includes: The upper shaft section extends through the support sleeve and into the adjustment chamber at its top. A limiting structure is located within the adjustment chamber and surrounds the top sidewall of the upper shaft section to limit the extreme position of the descent of the upper shaft section; An elastic element, located within the adjustment chamber, surrounds the top of the upper shaft section and has a gap, with one end abutting against the top cover to be in a compressed state and provide the clamping force, and the other end being disposed in the limiting structure so as not to interfere with the movement of the upper shaft section during rotation.

7. The semiconductor growth apparatus according to claim 6, characterized in that, When the pressure head structure is connected to the pressure-bearing structure, the limiting structure is suspended in the adjustment chamber to avoid motion interference.

8. The semiconductor growth apparatus according to claim 6, characterized in that, The support sleeve is provided with an axial through-channel communicating with the adjustment chamber, and the upper shaft section passes through the axial through-channel; the outer diameter of the limiting structure is larger than the inner diameter of the axial through-channel to limit the extreme position of the descent of the upper shaft section.

9. The semiconductor growth apparatus according to claim 6, characterized in that, One end of the elastic element is movably abutted or fixedly connected to the top cover, and the other end is movably abutted to the limiting structure; Alternatively: one end of the elastic element is fixedly connected to the limiting structure, and the other end is movably abutted against the top cover.

10. The semiconductor growth apparatus according to claim 6, characterized in that, It also includes a preload adjustment component, which is disposed through and dynamically sealed in the top cover, with its bottom abutting against the top of the elastic member.

11. The semiconductor growth apparatus according to claim 10, characterized in that, The preload adjustment assembly includes: An adjusting bearing plate is disposed within the adjusting cavity and abuts against the top end of the elastic member; An adjustment drive unit is provided through and dynamically sealed in the top cover to move toward or away from the adjustment support plate, and extends to the bottom of the adjustment chamber and is connected to the adjustment support plate.

12. The semiconductor growth apparatus according to claim 10, characterized in that, It also includes a sealing cap that houses the top cover and the preload adjustment assembly and is detachably and sealingly connected to the support sleeve to enhance the sealing effect.

13. The semiconductor growth apparatus according to claim 1, characterized in that, The material of the pressure head structure is the same as that of the base, which is beneficial to the temperature uniformity of the base.

14. The semiconductor growth apparatus according to claim 1, characterized in that, It also includes a rotating component and a base pivot; The base pivot shaft passes through the bottom of the process cavity and is located at the bottom of the base; The rotating component is located outside the process chamber, with a dynamic seal at the bottom of the process chamber, and is rotatably connected to the base shaft to drive the base to rotate.

15. The semiconductor growth apparatus according to claim 14, characterized in that, It also includes a rotation control device, wherein the rotation assembly includes a lower rotation drive device to provide rotational driving force, and both the lower rotation drive device and the upper rotation drive device are communicatively connected to the rotation control device.

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