Valve seat assembly and semiconductor process apparatus

CN121576451BActive Publication Date: 2026-09-08BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
CN202511544874.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-10-27
Publication Date
2026-09-08
Estimated Expiration
2045-10-27

AI Technical Summary

Technical Problem

[0004]有鉴于此,本申请提供一种阀座组件,以解决现有的阀座结构复杂,内部流道冗长,需要使用大量阀体来实现气路的控制逻辑,且流道中存在死区,易产生颗粒物堆积的问题

Benefits of technology

[0017]The valve seat assembly provided in this application has an air inlet and an air outlet on the surface of the substrate, and multiple flow channels inside the substrate. The valve body is connected to the substrate and is used to open or close the connection between different flow channels to open a transmission channel for the precursor to flow between the air inlet and the air outlet, thereby realizing the logical control of the precursor's inlet path by the valve body. At least two sub-flow channels are provided in at least a portion of the flow channels. The sub-flow channels are at least partially curved and intersect each other. Compared with the horizontal flow channels and vertical straight flow channels in related technologies, the curved and intersecting flow channels can shorten the total length of the flow channels inside the substrate, reduce the bends of the flow channels, optimize the flow path of the precursor, reduce the transmission time of the precursor inside the substrate, and thus shorten the reaction cycle of the process, which is conducive to improving production capacity. Meanwhile, compared to related technologies where the plug is located on one side of the horizontal flow channel and there is a gap between it and the vertical flow channel, a dead zone with poor flow will be generated during the flow of the precursor. This dead zone is prone to leaving some precursor residue, which can react and form particulate matter. In this application, the sub-flow channels are at least partially curved and intersect to form a converging flow channel. The plug seals the opening on the side of the converging flow channel away from the sub-flow channel, achieving a complete seal of the flow channel. Furthermore, since the plug is located on the flow path of the precursor, the formation of a dead zone is avoided, further preventing the formation of particulate matter residue and ensuring product yield. In addition, the total length of the flow channels inside the matrix is ​​shortened, simplifying the matrix structure. The curved and intersecting flow channels break the limitations imposed by the horizontal and vertical flow channels on the valve body's installation position, allowing the valve seat assembly provided in this application to meet the corresponding requirements with fewer valve bodies, reducing operating and maintenance costs.

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Abstract

The application provides a valve seat assembly and a semiconductor process equipment, the valve seat assembly comprising: a base body having an inlet and an outlet arranged on the surface of the base body, and a plurality of flow channels arranged in the interior of the base body, the inlet and the outlet being communicated with different flow channels respectively; a valve body connected with the base body, used for opening or closing the connection between different flow channels, so as to open the transmission channel for precursor transmission between the inlet and the outlet, or close the transmission channel of the corresponding precursor; wherein at least two sub-flow channels are arranged in at least part of the flow channels, the sub-flow channels are at least partially curved and intersect with each other, forming an intersection flow channel; a plug is arranged in the intersection flow channel, and the side of the intersection flow channel away from the sub-flow channel has an opening, and the plug blocks the opening. In this way, by partially curving the sub-flow channels and intersecting them with each other, the total length of the flow channels is shortened, the reaction period is reduced, and the plug is arranged on the flow path of the precursor, so that a dead zone is avoided.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more specifically to a valve seat assembly and semiconductor process equipment. Background Technology

[0002] Taking atomic layer deposition (ALD) as an example, gaseous precursors need to be alternately pulsed into the reaction chamber. The precursors are chemically adsorbed on the wafer surface and react to form a thin film. After multiple precursors are introduced into the reaction chamber to participate in the reaction, an inert gas is needed to remove excess precursors and byproducts from the reaction chamber. The above steps are repeated multiple times according to different processes to finally obtain a thin film of a certain thickness.

[0003] In related technologies, valve seats with flow channels are typically used in conjunction with corresponding valve bodies to achieve logical control of the gas entering the chamber. However, due to limitations in the design standards and manufacturing precision of the flow channels, existing valve seat structures are complex with lengthy internal flow channels. This requires the use of numerous valve bodies to implement the control logic of the gas path, occupying a large amount of internal space and increasing the reaction cycle of the deposition equipment, which is detrimental to improving production capacity. At the same time, dead zones exist in the flow channel structure inside the valve seat, which easily lead to the accumulation of particulate matter and affect product yield. Summary of the Invention

[0004] In view of this, this application provides a valve seat assembly to solve the problems of existing valve seat structures being complex, having long internal flow channels, requiring a large number of valve bodies to implement the control logic of the gas path, and having dead zones in the flow channels that easily lead to particulate matter accumulation. In addition, this application also provides a semiconductor process apparatus incorporating this valve seat assembly.

[0005] To achieve the above objectives, this application provides the following technical solution: A valve seat assembly, comprising: The substrate has an air inlet and an air outlet disposed on the surface of the substrate, and a plurality of flow channels disposed inside the substrate, wherein the air inlet and the air outlet are respectively connected to different flow channels; The valve body, connected to the base, is used to open or close the connection between different flow channels, so as to open the transmission channel for the precursor to be transmitted between the air inlet and the air outlet, or close the transmission channel of the corresponding precursor. In this embodiment, at least two sub-channels are provided in at least a portion of the flow channel, and the sub-channels are at least partially curved and intersect each other to form a converging flow channel; a block is provided in the converging flow channel, and the side of the converging flow channel away from the sub-channel has an opening, and the block seals the opening.

[0006] Optionally, in the above-described valve seat assembly, the valve seat assembly includes multiple flow channel groups, each of the flow channel groups including multiple flow channels controlled by the valve body to open or close the transmission channel between different air inlets and air outlets.

[0007] Optionally, in the valve seat assembly described above, a first air inlet is provided on the base, and the first air inlet is located on the bottom wall of the base; The flow channel assembly includes a first flow channel disposed inside the substrate, and the first flow channel includes a first sub-flow channel and a second sub-flow channel; One end of the first sub-channel is connected to the first air inlet, and one end of the second sub-channel forms a connection hole on the bottom wall of the substrate; The other end of the first sub-channel approaches the other end of the second sub-channel and merges to form the converging channel.

[0008] Optionally, in the valve seat assembly described above, the first sub-flow channel has a first vertical section and a first inclined section; the second sub-flow channel has a second vertical section and a second inclined section; The first vertical segment and the second vertical segment are arranged perpendicular to the bottom wall of the base, and the first inclined segment and the second inclined segment are arranged in a direction that approaches each other; One end of the first vertical section is connected to the first air inlet, and the other end is connected to one end of the first inclined section; one end of the second vertical section forms the connecting hole on the bottom wall of the substrate, and the other end is connected to one end of the second inclined section.

[0009] Optionally, in the valve seat assembly described above, the flow channel group includes a second flow channel disposed inside the base, and the second flow channel includes at least three of the sub-flow channels; At least three of the sub-channels have a connecting hole formed at one end on the bottom wall of the substrate, and the other ends are close to each other and converge to form the converging channel.

[0010] Optionally, in the valve seat assembly described above, at least three of the sub-channels each have a vertical section and an inclined section; The vertical sections are respectively arranged perpendicular to the bottom wall of the base, and the inclined sections are respectively arranged in a direction that approaches each other; One end of the vertical section forms the connecting hole on the bottom wall of the substrate, and the other end is connected to the inclined section.

[0011] Optionally, in the valve seat assembly described above, a second air inlet is provided on the base, and the second air inlet is located on the side wall of the base; The matrix has a third flow channel inside, which includes a third sub-flow channel and a fourth sub-flow channel; One end of the third sub-channel is connected to the second air inlet, and the other end is connected to one end of the fourth sub-channel. The other end of the fourth sub-channel forms a connection hole on the bottom wall of the substrate.

[0012] Optionally, in the above-mentioned valve seat assembly, the valve seat assembly further includes a heating element, and the side wall of the base is provided with a mounting hole; At least a portion of the heating element is inserted into the mounting hole.

[0013] Optionally, in the above-mentioned valve seat assembly, the valve seat assembly includes a plurality of heating elements, and the plurality of heating elements are uniformly disposed on the substrate; And / or, the valve seat assembly includes an even number of the heating elements, which are arranged in pairs in a mirror image.

[0014] Optionally, in the valve seat assembly described above, an over-temperature switch is further provided on the base, and the over-temperature switch is connected to the heating element; the over-temperature switch is used to open or close the heating element when the real-time temperature of the base differs from a preset value.

[0015] Optionally, in the valve seat assembly described above, a sealing joint is further provided on the base, and the air inlet is connected to an external air supply device through the sealing joint; And / or, the connection between the gas outlet and the reaction chamber is provided with a sealing element.

[0016] A semiconductor process apparatus, including the valve seat assembly as described above.

[0017] The valve seat assembly provided in this application has an air inlet and an air outlet on the surface of the substrate, and multiple flow channels inside the substrate. The valve body is connected to the substrate and is used to open or close the connection between different flow channels to open a transmission channel for the precursor to flow between the air inlet and the air outlet, thereby realizing the logical control of the precursor's inlet path by the valve body. At least two sub-flow channels are provided in at least a portion of the flow channels. The sub-flow channels are at least partially curved and intersect each other. Compared with the horizontal flow channels and vertical straight flow channels in related technologies, the curved and intersecting flow channels can shorten the total length of the flow channels inside the substrate, reduce the bends of the flow channels, optimize the flow path of the precursor, reduce the transmission time of the precursor inside the substrate, and thus shorten the reaction cycle of the process, which is conducive to improving production capacity. Meanwhile, compared to related technologies where the plug is located on one side of the horizontal flow channel and there is a gap between it and the vertical flow channel, a dead zone with poor flow will be generated during the flow of the precursor. This dead zone is prone to leaving some precursor residue, which can react and form particulate matter. In this application, the sub-flow channels are at least partially curved and intersect to form a converging flow channel. The plug seals the opening on the side of the converging flow channel away from the sub-flow channel, achieving a complete seal of the flow channel. Furthermore, since the plug is located on the flow path of the precursor, the formation of a dead zone is avoided, further preventing the formation of particulate matter residue and ensuring product yield. In addition, the total length of the flow channels inside the matrix is ​​shortened, simplifying the matrix structure. The curved and intersecting flow channels break the limitations imposed by the horizontal and vertical flow channels on the valve body's installation position, allowing the valve seat assembly provided in this application to meet the corresponding requirements with fewer valve bodies, reducing operating and maintenance costs. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the valve seat assembly provided in an embodiment of this application.

[0020] Figure 2 This is a bottom view of the valve seat assembly provided in an embodiment of this application.

[0021] Figure 3 This is a schematic diagram of the structure of the substrate provided in an embodiment of this application.

[0022] Figure 4 This is a schematic diagram of the structure of the first flow channel provided in an embodiment of this application.

[0023] Figure 5 This is a schematic diagram of the structure of the second flow channel provided in an embodiment of this application.

[0024] Figure 6 This is a schematic diagram of the structure of the third flow channel provided in an embodiment of this application. Detailed Implementation

[0025] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] In related technologies, the process of manufacturing semiconductor chips requires the use of special gases to be introduced into the reaction chamber and to achieve specific physical or chemical reactions on the wafer surface, such as crystal growth, oxidation process, deposition process, etching process, doping process, annealing process, etc.

[0027] Taking atomic layer deposition (ALD) as an example, gaseous precursors (including general gases and specialty gases) need to be alternately introduced into the reaction chamber to induce chemical adsorption and reaction on the wafer surface to form a thin film. Related technologies typically use a valve body with corresponding flow channels to achieve logical control of the inlet gas. The flow channels are usually located inside the valve seat, and the valve body is connected to the flow channels in the valve seat via a W-type or C-type sealing valve to maintain a seal. The valve seat structure includes a valve block, a base plate, and a bottom block. The valve body is mounted on the valve block, which is fixed to the base plate and connected to the bottom block via a bird's-foot structure. The bottom block has an outlet for the precursor to enter the reaction chamber. While this valve seat structure can change the inlet direction of the precursor, it is limited by the valve body's installation position. The flow channels inside the valve block, base plate, and bottom block, especially at the intersection of multiple flow channels, are all designed as horizontal or vertical straight-through channels. This results in complex internal flow channels and long flow paths, lengthening the reaction cycle of the deposition process and thus affecting the thin film's processability.

[0028] Meanwhile, due to the limitations of the flow channel processing characteristics in the aforementioned valve seat structure, only W-type sealing valves can be used for connection and sealing. Since W-type sealing valves have certain design standards for flow channel adaptation and are subject to processing constraints, at the intersection of multiple flow channels, the length of the horizontal flow channel will inevitably be greater than the side wall of the vertical flow channel. Simultaneously, a plug needs to be placed on one side of the horizontal flow channel, with a gap between it and the vertical flow channel to achieve a seal. This structure inevitably creates a dead zone with poor flow as the precursor flows from the vertical flow channel into the horizontal flow channel and then into different vertical flow channels. When multiple precursors remain in this dead zone, they react and form particulate residue. This particulate residue will then be carried into the reaction chamber during subsequent gas supply, thus affecting product yield.

[0029] In some other gas path control modules, the valve body and seat are connected using a C-type sealing valve, which requires a horizontal or vertical flow channel to connect to the valve body's inlet (outlet). This results in the flow channels inside the valve seat being both horizontal and vertical. If a continuous flow channel needs to be formed on the same plane, at least two vertical flow channels and one horizontal flow channel are required, increasing the overall flow channel length and prolonging the deposition reaction cycle. Furthermore, a large number of valve bodies are needed to alternately supply multiple precursors, and the C-type sealing valve requires additional sealing elements for sealing. The numerous sealing connections increase the difficulty of installation and maintenance.

[0030] In response to the above situation, such as Figures 1-6As shown, this application embodiment provides a valve seat assembly, including a base 1 and a valve body 2; the base 1 has an air inlet and an air outlet 15 disposed on the surface of the base 1, and a plurality of flow channels disposed inside the base 1, the air inlet and the air outlet 15 being respectively connected to different flow channels; the valve body 2 is connected to the base 1 and is used to open or close the connection between different flow channels, so as to open a transmission channel for the transmission of the precursor between the air inlet and the air outlet 15, or close the transmission channel of the corresponding precursor; wherein, at least two sub-flow channels 110 are disposed in at least a portion of the flow channels, the sub-flow channels 110 are at least partially curved and intersect each other to form a converging flow channel 16; a block 3 is disposed in the converging flow channel 16, and the side of the converging flow channel 16 away from the sub-flow channel 110 has an opening, and the block 3 seals the opening. Thus, by partially bending and bringing the sub-channels 110 closer together to each other, they eventually converge. Compared to related technologies that only use horizontal and vertical channels for connection, this embodiment reduces the overall length of the internal flow channels of the valve seat, shortens the flow path of the precursor, and consequently shortens the entire reaction cycle, increasing yield. Simultaneously, after the sub-channels 110 are partially bent and converge to form the converging flow channel 16, the plug 3 seals the side of the converging flow channel 16 away from the sub-channels 110. This seals the flow channel, preventing precursor leakage, and also ensures that the plug 3 is positioned on the precursor's flow path, avoiding dead zones and guaranteeing smooth precursor flow throughout the flow channel area. This prevents precursor residue from reacting and generating particulate matter, further improving product yield. In addition, due to the shortened flow channel length, the overall structure of the valve seat can be more compact, and the curved and intersecting flow channels can break the restrictions of the horizontal flow channel and the vertical flow channel on the installation position of the valve body 2, so that the valve seat assembly provided in this application can meet the corresponding requirements with fewer valve bodies 2, thereby reducing the cost of use and subsequent maintenance.

[0031] In an optional embodiment, at least two sub-channels 110 are provided in a portion of the flow channel. The multiple sub-channels 110 may all be partially curved and extend toward each other to form a converging flow channel 16. Alternatively, the multiple sub-channels 110 may be configured such that one or more sub-channels 110 remain vertical, while at least one of the remaining sub-channels 110 is partially curved and extends toward the vertical sub-channel 110 to form a converging flow channel 16.

[0032] Preferably, to further shorten the flow channel length, the sub-flow channel 110 can be partially inclined. Compared to a curved sub-flow channel 110, an inclined sub-flow channel 110 can further shorten the total length of the flow channel and improve the transport efficiency of the precursor. It should be noted that, considering the limitations of the processing tools, the angle between the extension direction of the inclined sub-flow channel 110 and the extension direction of the horizontal or vertical sub-flow channel 110 should be an obtuse angle. This avoids the processing tool bearing more processing resistance when it is inclined, which is conducive to the rapid forming of the sub-flow channel 110, and also avoids the processing tool being scrapped due to excessive force, thus reducing processing costs.

[0033] The valve body 2 in this valve seat assembly includes a valve plate, an inlet port, and an outlet port. A connection hole is formed on the surface of the base 1 for the flow channels. The valve body 2 is mounted on the base 1, and the inlet port and outlet port are respectively aligned with the connection holes of different flow channels and coaxially arranged. The inlet port and outlet port 15 are respectively connected to different flow channels. The valve body 2 controls the opening or closing of the flow channels by driving the valve plate, thereby forming a transmission channel for the precursor to flow between the inlet port and outlet port 15. In this embodiment, the connection hole is located on the bottom wall of the base 1, and correspondingly, the valve body 2 is also mounted on the bottom wall of the base 1; in other embodiments, the connection hole may also be located on the side wall of the base 1 depending on the installation position of the valve body 2.

[0034] like Figures 1-3 As shown, the valve seat assembly includes multiple flow channel groups. Each flow channel group includes a valve body 2 and multiple flow channels controlled by the valve body 2 to conduct transmission channels between different air inlets and outlets 15. In this embodiment, each flow channel group includes three different types of flow channels: a first flow channel 10 with two intersecting sub-flow channels 110, a second flow channel 11 with three intersecting sub-flow channels 110, and a third flow channel 12 with only horizontal and vertical sub-flow channels 110. Each flow channel group includes at least one first flow channel 10, one second flow channel 11, and one third flow channel 12. The valve body 2 is used to connect the connection holes of the first flow channel 10 and the second flow channel 11, the connection holes of the second flow channel 11 and the third flow channel 12, and the connection holes of the first flow channel 10 and the third flow channel 12, respectively. Each flow channel group can be connected to multiple air inlets and outlets 15 respectively, and the valve body 2 can control the opening and closing of the flow channels, respectively connecting the transmission channels for different precursors to flow between different air inlets and outlets 15.

[0035] Specifically, the first flow channel 10 enables communication between the air inlet and the valve body 2 on the same plane, the second flow channel 11 enables communication between different flow channels on the same plane, and the third flow channel 12 enables communication between the air inlet or outlet 15 and the valve body 2 on different planes. Thus, by combining these different types of flow channels, a large number of valve bodies 2, air inlets, and / or outlets 15 can be integrated within the same plane of the base 1, further improving the integration of the valve seat assembly.

[0036] by Figure 3 For example, the substrate 1 has three flow channel groups inside. Each flow channel group includes three valve bodies 2, a first flow channel 10, a second flow channel 11, and three third flow channels 12. The first flow channel 10 is connected to an air inlet, and the three third flow channels 12 are connected to an air outlet 15 and two other air inlets, respectively. The second flow channel 11 changes the flow direction of the precursor to cooperate with the valve bodies 2, thus connecting the first flow channel 10 and the three third flow channels 12. In other embodiments, the substrate 1 may also have more different types of flow channel structures and more flow channel groups. The configuration of each flow channel group can be the same or different.

[0037] Please refer to the following: Figures 2-6 The specific structures of the first flow channel 10, the second flow channel 11, and the third flow channel 12 are described respectively.

[0038] like Figures 3-4 As shown, a first air inlet 13 is provided on the base 1, and the first air inlet 13 is located on the bottom wall of the base 1; a first flow channel 10 is provided inside the base 1, and the first flow channel 10 includes a first sub-flow channel 100 and a second sub-flow channel 101; one end of the first sub-flow channel 100 is connected to the first air inlet 13, and one end of the second sub-flow channel 101 forms a connecting hole on the bottom wall of the base 1; the other end of the first sub-flow channel 100 and the other end of the second sub-flow channel 101 approach each other and converge to form a first converging flow channel 160. Thus, the first air inlet 13 and the connecting hole are both located on the bottom wall of the base 1, and are connected by the first sub-flow channel 100 and the second sub-flow channel 101, respectively. The first sub-flow channel 100 and the second sub-flow channel 101 are close to each other inside the base 1 and converge to form the first converging flow channel 160. The first block 30 seals the side of the first converging flow channel 160 away from the first sub-flow channel 100 and the second sub-flow channel 101, forming a seal. After the precursor enters the first sub-flow channel 100 through the first air inlet 13, it continues to flow along the first sub-flow channel 100 and enters the second sub-flow channel 101 at the first converging flow channel 160. Since the first block 30 blocks the flow path of the precursor, the gas flow in the entire first flow channel 10 is smooth, avoiding the formation of dead zones with poor flow as in related technologies.

[0039] In optional embodiments, such as Figure 4 As shown, both the first sub-channel 100 and the second sub-channel 101 are at least partially bent toward each other to achieve convergence. In other embodiments, either the first sub-channel 100 or the second sub-channel 101 may be arranged vertically, while the other may be a bend or an inclined tube, thereby achieving convergence. Regardless of the above arrangement, the flow length of the at least partially bent sub-channel 110 in this embodiment can be shortened compared to the horizontal and vertical flow channels in related technologies, thus facilitating the integration of the substrate 1.

[0040] Specifically, the first sub-flow channel 100 has a first vertical section 1000 and a first inclined section 1001; the second sub-flow channel 101 has a second vertical section 1010 and a second inclined section 1011; the first vertical section 1000 and the second vertical section 1010 are arranged perpendicular to the bottom wall of the base 1, and the first inclined section 1001 and the second inclined section 1011 are arranged in a direction that approaches each other; one end of the first vertical section 1000 is connected to the first air inlet 13, and the other end is connected to one end of the first inclined section 1001; one end of the second vertical section 1010 forms a connecting hole on the bottom wall of the base 1, and the other end is connected to one end of the second inclined section 1011. Thus, both the first sub-flow channel 100 and the second sub-flow channel 101 are partially inclined. On the one hand, the arrangement of the first inclined section 1001 and the second inclined section 1011 effectively shortens the flow channel length; on the other hand, it also reduces the included angle between the inclined section 1101 and the vertical section 1100, reducing the resistance during the processing of the inclined section 1101 and facilitating the forming of the inclined section 1101. The first sub-flow channel 100 and the second sub-flow channel 101 are respectively provided with a first vertical section 1000 and a second vertical section 1010, which can meet the requirements of the C-type sealing valve. This embodiment integrates the flow channel structure adapted to both C-type and W-type sealing valves, realizing the through-flow of the C-type sealing valve's flow channel on the same plane (e.g., Figures 3-4 The first flow channel 10 shown further enhances the integration of the valve seat assembly. Preferably, the connection position of the first vertical section 1000 and the first inclined section 1001 is rounded, and the connection position of the second vertical section 1010 and the second inclined section 1011 is also rounded, so that the precursor can be smoother when turning and avoids the precursor from forming residue at the connection position.

[0041] like Figure 2 , Figure 3 and Figure 5As shown, a second flow channel 11 is provided inside the substrate 1. The second flow channel 11 includes at least three sub-flow channels 110. One end of each of the at least three sub-flow channels 110 forms a connecting hole on the bottom wall of the substrate 1, and the other ends are close to each other and converge to form a second converging flow channel 161. As can be seen from the above, the main function of the second flow channel 11 is to realize the change of the flow direction of the precursor. It cooperates with the valve body 2 to realize the connection between the first flow channel 10 and the third flow channel 12. The first flow channel 10 and the third flow channel 12 are connected to the air inlet and the air outlet 15, respectively. By opening or closing the sub-flow channels 110 in the different second flow channels 11, the switching between different air inlets and outlets 15 can be realized to allow different precursors to flow. In the second flow channel 11, the second block 31 also blocks the side of the second confluence flow channel 161 away from the sub-flow channel 110. After the precursor flows into the sub-flow channel 110 in the second flow channel 11 through other first flow channels 10 or third flow channels 12, it continues to flow along the current sub-flow channel 110 and enters other sub-flow channels 110 at the second confluence flow channel 161. Since the second block 31 blocks the flow path of the precursor, the gas flow in the entire second flow channel 11 is smooth, which can also avoid the formation of dead zones with poor flow in related technologies.

[0042] The second flow channel 11 may have more sub-flow channels 110. However, it should be noted that when the second flow channel 11 has more sub-flow channels 110, it means that more valve bodies 2 need to be used to cooperate with it. This not only increases the complexity of the flow channel, but also requires a larger installation space for the valve bodies 2. Those skilled in the art can select a second flow channel 11 with an appropriate number of sub-flow channels 110 based on the usage space of the valve seat and the number of precursors to be used.

[0043] In optional embodiments, such as Figure 5 As shown, at least three sub-channels 110 are at least partially bent toward each other to achieve convergence. In other embodiments, one or more sub-channels 110 may also be arranged vertically, and the remaining at least one sub-channel 110 may be configured as a bend or an oblique tube to achieve convergence. Regardless of the above arrangement, the channel length of the at least partially bent sub-channels 110 in this embodiment can be effectively shortened compared to the horizontal and vertical channels in related technologies, thereby facilitating the integration of the substrate 1.

[0044] Specifically, at least three sub-channels 110 each have a vertical section 1100 and an inclined section 1101; the vertical sections 1100 are respectively disposed perpendicular to the bottom wall of the substrate 1, and the inclined sections 1101 are respectively disposed in a direction that approaches each other; one end of each vertical section 1100 forms a connecting hole on the bottom wall of the substrate 1, and the other end is respectively connected to the inclined section 1101. Similarly, as Figure 5As shown, at least three sub-channels 110 are partially inclined. On the one hand, the inclined section 1101 shortens the channel length; on the other hand, it reduces the angle between the inclined section 1101 and the vertical section 1100, reducing the resistance during machining the inclined section 1101 and facilitating its forming. Each of the at least three sub-channels 110 also has a vertical section 1100, which meets the requirements of a C-type sealing valve. This embodiment integrates channel structures compatible with both C-type and W-type sealing valves, achieving through-flow of the C-type sealing valve's channel on the same plane (e.g., Figure 3 and Figure 5 The second flow channel 11 shown further enhances the integration of the valve seat assembly. Preferably, the connection position between the vertical section 1100 and the inclined section 1101 is rounded to allow the precursor to move more smoothly during steering and to prevent the precursor from leaving residue at the connection position.

[0045] like Figure 1 , Figure 3 and Figure 6 As shown, a second air inlet 14 is provided on the base 1, and the second air inlet 14 is located on the side wall of the base 1; a third flow channel 12 is provided inside the base 1, the third flow channel 12 including a third sub-flow channel 120 and a fourth sub-flow channel 121; one end of the third sub-flow channel 120 is connected to the second air inlet 14, and the other end is connected to one end of the fourth sub-flow channel 121, the other end of the fourth sub-flow channel 121 forming a connecting hole on the bottom wall of the base 1. Figure 6 As shown, the third sub-flow channel 120 is a horizontal flow channel, and the fourth sub-flow channel 121 is a vertical flow channel. The connection position between the third sub-flow channel 120 and the fourth sub-flow channel 121 can also be rounded to improve the smoothness of the precursor during the steering process and avoid the precursor from forming residue at the connection position.

[0046] In another embodiment, the third flow channel 12 may also consist of a third sub-flow channel 120, a fourth sub-flow channel 121, and a fifth sub-flow channel. The third sub-flow channel 120 may be a horizontal flow channel and communicate with the second air inlet 14 located on the side wall of the substrate 1. The fourth sub-flow channel 121 may be a vertical flow channel and form a connecting hole on the bottom wall of the substrate 1. The fifth sub-flow channel is an inclined tube, with its two ends connected to the third sub-flow channel 120 and the fourth sub-flow channel 121, respectively. Preferably, the connection points between the third sub-flow channel 120 and the fifth sub-flow channel 120, and between the fourth sub-flow channel 121 and the fifth sub-flow channel, are rounded to prevent precursor residue from forming at the connection points. Thus, the fifth sub-flow channel being an inclined tube further shortens the flow channel length.

[0047] The following uses atomic layer deposition (ALD) as an example, combined with... Figure 3 The first flow channel group 80 further explains the working principle of the valve seat assembly.

[0048] To facilitate the differentiation of the different first flow channel 10, second flow channel 11, third flow channel 12, first air inlet 13, second air inlet 14, and air outlet 15 in different flow channel groups, the first flow channel 10 in the first flow channel group 80 is referred to as first flow channel individual a; the second flow channel 11 is referred to as second flow channel individual b; the three third flow channels 12 are referred to as third flow channel individual c, third flow channel individual d, and third flow channel individual e, respectively; the first air inlet 13 is referred to as first air inlet individual I; the two second air inlets 14 are referred to as second air inlet individual II and second air inlet individual III, respectively; and the air outlet 15 is referred to as air outlet individual IV.

[0049] The first flow channel group 80 includes a first valve body 20, a second valve body 21, a third valve body 22, a first flow channel individual a, a second flow channel individual b, a third flow channel individual c, a third flow channel individual d, and a third flow channel individual e; wherein, one end of the first flow channel individual a is connected to the first air inlet individual I, and the other end forms a first connecting hole 171 on the bottom wall of the base 1; the second flow channel individual b forms a second connecting hole 172, a third connecting hole 173, and a fourth connecting hole 174 on the bottom wall of the base 1 respectively; one end of the third flow channel individual c is connected to the second air inlet individual II, and the other end forms a first connecting hole 171 on the bottom wall of the base 1. A fifth connecting hole 175 is formed on the wall; one end of the third flow channel individual d is connected to the second air inlet individual Ⅲ, and the other end forms a sixth connecting hole 176 on the bottom wall of the base 1; one end of the third flow channel individual e is connected to the air outlet individual Ⅳ, and the other end forms a seventh connecting hole 177 on the bottom wall of the base 1; the first valve body 20 is connected to the first connecting hole 171 and the second connecting hole 172 respectively; the second valve body 21 is connected to the third connecting hole 173 and the fifth connecting hole 175 respectively; the third valve body 22 is connected to the fourth connecting hole 174, the sixth connecting hole 176 and the seventh connecting hole 177 respectively. Among them, the first air inlet individual Ⅰ is used to supply the first general gas, which is a continuous flow gas; the second air inlet individual Ⅱ is used to supply the second general gas, which is a short flow gas; and the second air inlet individual Ⅲ is used to supply the first special gas.

[0050] During the purging stage before the deposition process, a first general-purpose gas needs to be supplied to the reaction chamber. At this time, the third valve body 22 is opened, and some sub-channels in the second valve body 21 and the first valve body 20 are closed, so that the third connecting hole 173, the fifth connecting hole 175, and the sixth connecting hole 176 are closed, and the remaining connecting holes are opened. The first general-purpose gas enters the first flow channel a through the first inlet individual I, passes through the first connecting hole 171 along the first flow channel a, passes through the third valve body 22, enters the second flow channel b through the second connecting hole 172, flows along the second flow channel b, then passes through the fourth connecting hole 174, passes through the first valve body 20, enters the third flow channel e through the seventh connecting hole 177, and finally enters the reaction chamber through the outlet individual IV along the third flow channel e.

[0051] After the deposition process begins, the first stage reaction is initiated, which requires the introduction of a carrier gas, specifically the second gas in this embodiment. Since the short-flow gas has a faster flow rate and higher pressure than the long-flow gas, the first and second gases can be introduced into the reaction chamber simultaneously. At this time, the third valve body 22 and the second valve body 21 are opened, and some sub-channels in the first valve body 20 are closed, causing the sixth connection hole 176 to close while the remaining connection holes are opened. The second general gas enters the third flow channel c through the second inlet II, passes through the fifth connecting hole 175 along the third flow channel c, passes through the second valve body 21, and then enters the second flow channel b through the third connecting hole 173. The first general gas enters the first flow channel a through the first inlet I, passes through the first connecting hole 171 along the first flow channel a, passes through the third valve body 22, and then enters the second flow channel b through the second connecting hole 172. The first and second general gases are mixed in the second flow channel b. The mixed gas passes through the fourth connecting hole 174, passes through the first valve body 20, passes through the seventh connecting hole 177, enters the third flow channel e, and then enters the reaction chamber through the outlet IV along the third flow channel e. After the second general gas enters the reaction chamber, the first valve body 20 is opened and the third valve body 22 is closed, so that the first and second connecting holes 171 and 172 are closed, and the remaining connecting holes are opened. The first special gas enters the third flow channel d through the second inlet Ⅲ, passes through the sixth connecting hole 176 along the third flow channel d, passes through the first valve body 20, and enters the third flow channel e through the seventh connecting hole 177. It mixes with the first general gas in the third flow channel e. The mixed gas enters the reaction chamber through the outlet Ⅳ to react. After the reaction, the first valve body 20 and the second valve body 21 are closed.

[0052] To facilitate the distinction between the first air inlet 13 and the second air inlet 14 in different flow channel groups, the first air inlet 13 in the second flow channel group 81 is referred to as the first air inlet individual V; the two second air inlets 14 are referred to as the second air inlet individual VI and the second air inlet individual VII, respectively; the first air inlet 13 in the third flow channel group 82 is referred to as the first air inlet individual VIII, and the two second air inlets 14 are referred to as the second air inlet individual IX and the second air inlet individual X, respectively.

[0053] like Figure 3As shown, the substrate 1 also includes a second flow channel group 81 and a third flow channel group 82. The second flow channel group 81 and the third flow channel group 82 are configured exactly the same as the first flow channel group 80, except that the relative positions of the first flow channel 10, the second flow channel 11, and the third flow channel 12 are different, as are the connected air inlets and outlets 15. The second flow channel group 81 is provided with a first air inlet individual V for supplying the third general gas, a second air inlet individual VI for supplying the fourth general gas, and a second air inlet individual VII for supplying the second special gas; the third flow channel group 82 is provided with a first air inlet individual VIII for supplying the fifth general gas, a second air inlet individual IX for supplying the sixth general gas, and a second air inlet individual X for supplying the third special gas.

[0054] In the first stage reaction described above, after the second general gas in the first flow channel group 80 enters the reaction chamber, one flow channel in the second flow channel group 81 that connects to the first air inlet individual V is opened, and the two flow channels connecting the second air inlet individual VI and the second air inlet individual VII are closed, so that the third general gas can enter the reaction chamber; at the same time, one flow channel in the third flow channel group 82 that connects to the first air inlet individual VIII is opened, and the two flow channels connecting the second air inlet individual IX and the second air inlet individual X are closed, so that the sixth general gas can enter the reaction chamber.

[0055] As an example, the second stage reaction can be referenced from the first stage reaction. In the second flow channel group 81, the third general gas is introduced in a continuous ventilation manner, and the fourth general carrier gas is introduced simultaneously and mixed in the flow channel. After the mixed gas is introduced into the reaction chamber, the introduction of the third general gas is turned off, and the second special gas is introduced. After the reaction is completed, the introduction of the second special gas and the fourth general gas is turned off, and the third general gas is introduced. At this time, in the first flow channel group 80, only the first general gas is kept in a continuous ventilation manner, and all other gases are turned off. At the same time, in the third flow channel group 82, only the fifth general gas is kept in a continuous ventilation manner, and all other gases are turned off.

[0056] When entering the third stage reaction, the first and second stage reactions can be referenced. In the third flow channel group 82, the fifth general gas is introduced in a continuous ventilation manner, and the sixth general carrier gas is introduced simultaneously and mixed with the flow channel. After the mixed gas is introduced into the reaction chamber, the introduction of the fifth general gas is turned off, and the third special gas is introduced. After the reaction is completed, the introduction of the third special gas and the sixth general gas is turned off, and the fifth general gas is introduced. At this time, in the first flow channel group 80, only the first general gas is kept in a continuous ventilation manner, and all other gases are turned off. At the same time, in the second flow channel group 81, only the third general gas is kept in a continuous ventilation manner, and all other gases are turned off.

[0057] In optional embodiments, the valve seat assembly in this application embodiment can also be adapted to different processes, such as simultaneously introducing special gases into two flow channel groups. Meanwhile, those skilled in the art will understand that the general gas and special gas introduced into the above-mentioned outlet port vary depending on the process. For example, the general gas can be nitrogen, oxygen, argon, hydrogen, etc., while the special gas can be borane (B2H6) or phosphine (PH3) for doping, silane (SiH4) for thin film deposition, chlorine (Cl2) or nitrogen fluoride (NF3) for etching, hydrogen fluoride (HF) for cleaning, etc. This embodiment does not limit this.

[0058] Regarding the processing methods of the first flow channel 10, the second flow channel 11, and the third flow channel 12, taking the first flow channel 10 as an example, the operator can first open a connecting hole on the bottom wall of the base 1 and process a vertical straight channel towards the inside of the base 1 to meet the usage requirements of the C-type sealing valve; then, open a machined oblique hole on the surface opposite to the bottom wall of the base 1 and process an inclined flow channel towards the inside of the base 1. The inclined flow channel and the vertical straight channel are connected inside the base 1 to form a sub-flow channel. Repeat the above steps to process another sub-flow channel on the symmetrical side, and seal the machined oblique hole with the first plug 30 to form a... Figure 4 The first flow channel 10 is shown. Preferably, during processing, fillets can be used to connect the vertical flow channel and the inclined flow channel to reduce the residue of the precursor at the turning position.

[0059] The processing method for the second flow channel 11 is exactly the same as that for the first flow channel 10, the only difference being the number of sub-flow channels, which will not be described in detail here. As for the processing method for the third flow channel 12, it is consistent with the prior art, that is, a horizontal flow channel is opened on the side wall of the substrate 1, and a vertical straight flow channel is opened on the bottom wall of the substrate 1 for direct connection.

[0060] In addition to the structural changes to the flow channel mentioned above, the valve seat assembly provided in this application embodiment is also optimized in the following aspects.

[0061] like Figures 1-2 As shown, the valve seat assembly also includes a heating element 4, and a mounting hole is provided on the side wall of the base 1; at least a portion of the heating element 4 is inserted into the mounting hole. Due to the improvement of the flow channel structure, the base 1 can be integrally formed. Therefore, by inserting the heating element 4 into the mounting hole, the base 1 can be heated, thereby ensuring the temperature of the precursor flowing inside the base 1. Optionally, the heating element 4 can be a heating rod.

[0062] To further enhance the heating effect of the heating element 4 on the substrate 1, the valve seat assembly includes multiple heating elements 4, which are evenly arranged on the substrate 1. The multiple heating elements 4 should be parallel to the plane of the substrate 1, and can be arranged along the long side of the substrate 1 (e.g., along the long side of the substrate 1). Figure 2The substrate 1 can be arranged at even intervals along its left and right sides (e.g., along the short side of the substrate 1). Figure 2 The substrate 1 can be arranged at uniform intervals (vertically and vertically), or it can be evenly arranged at an angle to the edge of the substrate 1. Alternatively, as... Figure 2 As shown, the valve seat assembly includes an even number of heating elements 4, which are arranged in pairs in a mirror image. There may be two heating elements 4, which are inserted into the mounting holes on one side of the base 1 and mirrored in a direction that is at an angle to the edge of the base 1. There may also be four heating elements 4, which are inserted into the mounting holes on both sides of the base 1. There may also be six, eight or more heating elements 4, which are inserted into different mounting holes around the base 1 to achieve uniform heating of the base 1.

[0063] like Figure 1 As shown, an over-temperature switch 5 is also provided on the substrate 1, and the over-temperature switch 5 is connected to the heating element 4. The over-temperature switch 5 is used to turn the heating element 4 on or off when the real-time temperature of the substrate 1 differs from the preset value. It should be noted that most of the special gases used in semiconductor processes (such as silane SiH4, phosphine PH3, diborane B2H6, etc.) are spontaneously combustible, highly toxic, or highly reactive. When the ambient temperature rises abnormally, it may cause spontaneous combustion or explosion of the gas, or cause gas decomposition, or cause failure of the sealing material. Therefore, by integrating the over-temperature switch 5 on the substrate 1, it is possible to effectively monitor and prevent the valve seat assembly from causing danger due to abnormally high temperatures, thereby improving the safety performance of the base assembly.

[0064] like Figure 2 As shown, a sealing joint 6 is also provided on the base 1, and the air inlet is connected to an external air supply device through the sealing joint 6. The sealing joint 6 can be a VCR (Vacuum Coupling Radius) seal, which can achieve interlocking through internal and external threaded nuts, and generate plastic deformation by squeezing the metal gasket to form a sealing surface. After the gasket is deformed, it fits tightly with the conical surface of the joint, which can achieve nanoscale sealing.

[0065] Optionally, a seal 7 is provided at the connection between the air outlet and the reaction chamber. Due to the optimized flow channel structure, the substrate 1 provided in this embodiment can achieve an integrated design, improving the overall sealing performance of the substrate 1. Only the connection between the air outlet and the chamber on the entire substrate 1 requires an additional seal 7, further improving the ease of installation and practicality of the valve seat assembly and reducing the possibility of leakage in the precursor. The seal 7 can be a sealing ring.

[0066] In addition, this application also provides a semiconductor process apparatus, including the valve seat assembly described above. In this application embodiment, the semiconductor process apparatus may be a deposition apparatus, an oxidation apparatus, an etching apparatus, an annealing apparatus, etc.

[0067] The beneficial effects of the valve seat assembly in this semiconductor process equipment are described above and will not be repeated here.

[0068] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0069] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0070] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0071] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0072] It should be understood that the qualifiers “first,” “second,” “third,” “fourth,” “fifth,” and “sixth” used in the description of the embodiments of this application are only used to more clearly illustrate the technical solutions and are not intended to limit the scope of protection of this application.

[0073] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A valve seat assembly, characterized in that, include: A substrate has an air inlet and an air outlet disposed on the surface of the substrate, and a plurality of flow channel groups disposed inside the substrate, the plurality of flow channel groups including a plurality of flow channels, the air inlet and the air outlet respectively communicating with different flow channels; The valve body, connected to the base, is used to open or close the connection between different flow channels, so as to open the transmission channel for the precursor to be transmitted between the air inlet and the air outlet, or close the transmission channel of the corresponding precursor. At least two sub-channels are provided in at least a portion of the flow channel, the sub-channels are at least partially curved and intersect each other to form a converging flow channel; a block is provided in the converging flow channel, and the side of the converging flow channel away from the sub-channel has an opening, the block sealing the opening; The flow channel assembly includes a first flow channel disposed inside the substrate, the first flow channel including a first sub-flow channel and a second sub-flow channel; the first sub-flow channel has a first vertical section and a first inclined section; the second sub-flow channel has a second vertical section and a second inclined section; The first vertical segment and the second vertical segment are arranged perpendicular to the bottom wall of the base, and the first inclined segment and the second inclined segment are arranged in a direction that approaches each other.

2. The valve seat assembly according to claim 1, characterized in that, Each of the flow channels includes a plurality of flow channels controlled by the valve body to open or close the transmission channel between different air inlets and air outlets.

3. The valve seat assembly according to claim 2, characterized in that, The substrate is provided with a first air inlet, which is located on the bottom wall of the substrate; One end of the first sub-channel is connected to the first air inlet, and one end of the second sub-channel forms a connection hole on the bottom wall of the substrate; The other end of the first sub-channel approaches the other end of the second sub-channel and merges to form the first converging channel.

4. The valve seat assembly according to claim 3, characterized in that, One end of the first vertical section is connected to the first air inlet, and the other end is connected to one end of the first inclined section; one end of the second vertical section forms the connecting hole on the bottom wall of the substrate, and the other end is connected to one end of the second inclined section.

5. The valve seat assembly according to claim 2, characterized in that, The flow channel group further includes a second flow channel disposed inside the substrate, the second flow channel including at least three of the sub-flow channels; At least three of the sub-channels have a connecting hole formed at one end on the bottom wall of the substrate, and the other ends are close to each other and converge to form a second converging channel.

6. The valve seat assembly according to claim 5, characterized in that, At least three of the sub-channels each have a vertical section and an inclined section; The vertical sections are respectively arranged perpendicular to the bottom wall of the base, and the inclined sections are respectively arranged in a direction that approaches each other; One end of the vertical section forms the connecting hole on the bottom wall of the substrate, and the other end is connected to the inclined section.

7. The valve seat assembly according to claim 1, characterized in that, The base is provided with a second air inlet, which is located on the side wall of the base; The matrix has a third flow channel inside, which includes a third sub-flow channel and a fourth sub-flow channel; One end of the third sub-channel is connected to the second air inlet, and the other end is connected to one end of the fourth sub-channel. The other end of the fourth sub-channel forms a connection hole on the bottom wall of the substrate.

8. The valve seat assembly according to claim 1, characterized in that, The valve seat assembly also includes a heating element, and the side wall of the base is provided with mounting holes; At least a portion of the heating element is inserted into the mounting hole.

9. The valve seat assembly according to claim 8, characterized in that, The valve seat assembly includes a plurality of heating elements, which are uniformly disposed on the substrate. And / or, the valve seat assembly includes an even number of the heating elements, which are arranged in pairs in a mirror image.

10. The valve seat assembly according to claim 8, characterized in that, The substrate is also provided with an over-temperature switch, which is connected to the heating element; the over-temperature switch is used to turn the heating element on or off when the real-time temperature of the substrate differs from a preset value.

11. The valve seat assembly according to claim 1, characterized in that, The substrate is also provided with a sealing joint, and the air inlet is connected to an external air supply device through the sealing joint; And / or, the connection between the gas outlet and the reaction chamber is provided with a sealing element.

12. A semiconductor process apparatus, characterized in that, Includes the valve seat assembly as described in any one of claims 1 to 11.

Citation Information

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