基于深度图谱重建的铌酸锂波导缺陷快速甄别方法
By constructing a depth map reconstruction method for lithium niobate waveguides, the problems of depth aliasing and misjudgment in defect identification in high-density waveguide regions are solved, achieving high-precision defect localization and rapid evaluation, which is suitable for efficient detection of lithium niobate integrated optical chips.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NANJING NANZHI INST OF ADVANCED OPTOELECTRONIC INTEGRATION NANJING
- Filing Date
- 2025-12-19
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies cannot effectively distinguish and identify defects in the high-density parallel waveguide region of lithium niobate photonic integrated chips, resulting in high depth map aliasing and misjudgment rates, making it difficult to meet the mass production requirements of high-end lithium niobate chips.
By acquiring the scattering intensity and dark field intensity of the waveguide signal, a transverse equivalent response sequence is constructed, the coupled residual map is smoothed, a decoupled depth matrix is generated, the depth peak map is extracted, a defect candidate mask map is formed, and finally the defect judgment result is calculated.
It achieves high-precision defect localization and rapid, quantitative defect assessment, accurately identifies and assigns independent defects, solves the problems of deep aliasing and lateral splicing failure, and is suitable for non-destructive testing of lithium niobate integrated optical chips.
Smart Images
Figure CN121577641B_ABST