Semiconductor structure, manufacturing method thereof and electronic equipment

Abstract

The invention relates to a semiconductor structure and a manufacturing method thereof, and electronic equipment, and relates to the field of integrated circuits, the manufacturing method forms a capacitor hole group and defines the number of capacitor holes of the capacitor hole group, so that a formed memory cell comprises a transistor and at least two ferroelectric capacitors, the memory density is improved, and the performance of the memory cell is improved. The storage capability of the semiconductor structure is improved; the ferroelectric layer, the first electrode layer and the second electrode layer are formed to form the nonvolatile ferroelectric capacitor, the capacity of the ferroelectric capacitor for storing charges is high, the feature size and the occupied area of the ferroelectric capacitor can be further reduced, and the storage density can be further improved.

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