Display device
By optimizing the substrate design and conductive layer connection method of OLED displays, reducing the number of reflective and connecting electrodes, and utilizing the microcavity characteristics to optimize the distance between the reflective and cathode electrodes, the problems of light efficiency and color deviation caused by step differences are solved, thus improving the display effect.
Patent Information
- Application Number
- CN202510745648.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-08-20
- Filing Date
- 2025-06-05
- Publication Date
- 2026-03-03
AI Technical Summary
In existing OLED displays, the step difference at the contact area is relatively large, which leads to changes in the thickness of the common light-emitting layer, affecting light efficiency and color deviation. In addition, the number of reflective electrodes or connecting electrodes is relatively large, increasing the structural complexity.
By designing sub-pixel structures on the substrate in OLED displays, and using a multilayer conductive layer and anode electrode connection method, the number of reflective electrodes or connecting electrodes is reduced. Furthermore, by optimizing the distance between the reflective electrode and the cathode electrode through microcavity characteristics, the step difference is reduced, and the light extraction efficiency is improved.
This reduces step differences, improves the light efficiency and color uniformity of OLED displays, simplifies the structure, and enhances the display effect.
Smart Images

Figure CN121604674A_ABST
Abstract
Description
[0001] Cross-references to related applications
[0002] This application claims priority to Korean Patent Application No. 10-2024-0110891, filed on August 20, 2024, the entire contents of which are incorporated herein by reference for all purposes. Technical Field
[0003] This manual relates to display devices. Background Technology
[0004] With the advancement of the information society, the demand for display devices capable of displaying images is increasing, and various types of display devices such as liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays are being used.
[0005] Among display devices, OLED displays are self-emissive, offering superior viewing angles and contrast compared to LCDs, while eliminating the need for a separate backlight, enabling a lightweight and thin design and advantageous power consumption. Furthermore, OLED displays support low-voltage DC operation, have fast response times, and most notably, offer the advantage of lower manufacturing costs.
[0006] Recently, there has been a growing demand for OLED displays that meet the requirements of augmented reality (AR), virtual reality (VR), and ultra-high resolution display devices of equivalent quality. Summary of the Invention
[0007] The purpose of this specification is to provide a display device that can expand the light-emitting area.
[0008] Another object of this specification is to provide a display device that can minimize the step difference in the contact portion by reducing the number of reflective electrodes or connecting electrodes that overlap with the transistor in the contact portion.
[0009] Another object of this specification is to provide a display device that can reduce the thickness variation of the common light-emitting layer on the contact portion by minimizing the step difference in the contact portion, thereby improving the light efficiency and color deviation of the organic light-emitting device.
[0010] The purpose of this specification is not limited to the above content, and other technical objectives can be inferred from the following embodiments.
[0011] To achieve the above objectives, a display device according to an embodiment includes: a substrate including a first sub-pixel, a second sub-pixel, and a third sub-pixel, each sub-pixel including a light-emitting region and a non-light-emitting region surrounding the light-emitting region; a first conductive layer including a first reflective electrode in the light-emitting region and the non-light-emitting region of the first sub-pixel on the substrate, and a first connecting electrode in the non-light-emitting region of the second sub-pixel and the third sub-pixel; a second conductive layer including a second reflective electrode in the light-emitting region of the second sub-pixel on the first conductive layer; a third conductive layer including a third reflective electrode in the light-emitting region and the non-light-emitting region of the third sub-pixel on the second conductive layer, and a second connecting electrode in the non-light-emitting region of the first sub-pixel and the second sub-pixel; and an anode electrode disposed on the third conductive layer in the first sub-pixel, the second sub-pixel, and the third sub-pixel. In the non-light-emitting region of the first sub-pixel, the second connecting electrode is connected to the first reflective electrode; in the non-light-emitting region of the second sub-pixel, the second connecting electrode is connected to the first connecting electrode; and in the non-light-emitting region of the third sub-pixel, the third reflective electrode is connected to the first connecting electrode.
[0012] To achieve the above objectives, a display device according to another embodiment includes: a substrate including a first sub-pixel, a second sub-pixel, and a third sub-pixel, each sub-pixel including a light-emitting region and a non-light-emitting region surrounding the light-emitting region; a first conductive layer including a first reflective electrode in the light-emitting region and the non-light-emitting region of the first sub-pixel on the substrate, and a first connecting electrode in the non-light-emitting region of the second sub-pixel and the third sub-pixel; a second conductive layer including a second reflective electrode in the light-emitting region of the second sub-pixel on the first conductive layer; a third conductive layer including a third reflective electrode in the light-emitting region and the non-light-emitting region of the third sub-pixel on the second conductive layer; and an anode electrode disposed on the first conductive layer, the second conductive layer, and the third conductive layer respectively in the first sub-pixel, the second sub-pixel, and the third sub-pixel. In the non-light-emitting region of the first sub-pixel, the anode electrode is directly connected to the first reflective electrode; in the non-light-emitting region of the second sub-pixel, the anode electrode is directly connected to the first connecting electrode; and in the non-light-emitting region of the third sub-pixel, the third reflective electrode is directly connected to the first connecting electrode.
[0013] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description
[0014] Figure 1 This is a plan view of the display device according to the embodiment;
[0015] Figure 2 It is along Figure 1 A cross-sectional view taken by line A-A';
[0016] Figure 3 It is shown Figure 1 A plan view of the substrate, connecting film, and printed circuit board;
[0017] Figure 4 It is a circuit diagram of the pixels according to the implementation method;
[0018] Figure 5 yes Figure 1 A planar image of pixels;
[0019] Figure 6 It is along Figure 5 A cross-sectional view taken from line B-B';
[0020] Figure 7 It is along Figure 5 A cross-sectional view taken from line C-C';
[0021] Figure 8 yes Figure 6 A cross-sectional view of an organic light-emitting element;
[0022] Figure 9 It is based on the alternative implementation method Figure 6 A cross-sectional view of an organic light-emitting element;
[0023] Figure 10 It is a planar view of pixels according to another embodiment;
[0024] Figure 11 It is a planar view of pixels according to another embodiment;
[0025] Figure 12 It is along Figure 11 A cross-sectional view taken from line D-D';
[0026] Figure 13 It is a planar view of pixels according to another embodiment;
[0027] Figure 14 It is along Figure 13 A cross-sectional view taken from line E-E';
[0028] Figure 15 This is a cross-sectional view of a display device according to another embodiment; and
[0029] Figure 16 This is a cross-sectional view of a display device according to another embodiment. Detailed Implementation
[0030] In the following description, embodiments are illustrated with reference to the accompanying drawings. In the specification, when a component (or region, layer, portion, etc.) is referred to as being "on" another component, "on top" of another component, "connected to" or "coupled to" another component, it means that it can be directly on or connected / coupled to another component, or a third component can be placed between them.
[0031] The same reference numerals refer to the same parts. Additionally, in the drawings, the thickness, scale, and dimensions of parts are exaggerated for effective depiction of the technical content. The expression "and / or" is considered to include one or more combinations that can be defined by the associated parts.
[0032] The terms "first," "second," etc., are used to describe various components, but these components should not be limited by these terms. These terms are used only to distinguish one component from another. For example, without departing from the scope of the implementation, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless the context clearly indicates otherwise, the singular form is intended to include the plural form as well.
[0033] Terms such as "below," "under," "above," and "on" are used to describe the relationships between the parts depicted in the accompanying drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.
[0034] It will also be understood that the terms “comprising,” “having,” etc., are intended to specify the presence of the described features, numbers, steps, operations, components, parts, or combinations thereof, but are not intended to exclude the presence or possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.
[0035] Figure 1 This is a plan view of a display device according to an embodiment.
[0036] Reference Figure 1 According to an embodiment, the display device 1 may include a substrate 2, which includes a display area DA containing a plurality of pixels 20 and a non-display area NDA surrounding the display area DA. The non-display area NDA may surround the display area DA and may be an area that does not contain pixels 20 and does not generate images; however, the embodiments described herein are not limited thereto. The non-display area NDA may include a first pad area PA1 located on the opposite side of the second direction DR2 of the display area DA.
[0037] A gate driver GIP can be disposed on the first direction DR1 in a non-display area NDA on one side of the display area DA and the opposite side. The gate driver GIP can be formed on the substrate 2 as an integrated circuit, but is not limited thereto, and can also be formed as a driver chip. Figure 1 In the diagram, the gate driver GIP is shown on both sides of the display area DA, but the implementation is not limited to this. The gate driver GIP may be located on only one side, i.e., the left or right side.
[0038] The connector film (COF) can be attached to the first pad area PA1. A data driver (DIC) can be disposed on the connector film (COF). The data driver (DIC) can be provided in the form of a driver chip, but the embodiments described in this specification are not limited thereto. One end of the connector film (COF) can be connected to the first pad area PA1, and the other end can include a second pad area PA2. The printed circuit board (PCB) can be connected to the second pad area PA2 of the connector film (COF).
[0039] A low-potential voltage line VSSL can be set in the non-display area NDA. One end of the low-potential voltage line VSSL can be connected to the connecting film COF and can surround the display area DA from the outside of the gate driver GIP.
[0040] Figure 2 It is along Figure 1 The cross-sectional view taken by line A-A'. For ease of explanation, Figure 2 Only the organic light-emitting device (OLED) on the substrate 2 of the display device 1 and the encapsulation layer 8 encapsulating the organic light-emitting device (OLED) are shown.
[0041] Reference Figure 2 The connecting film COF can be attached to the first pad area PA1 of the substrate 2. A data driver DIC can be positioned on the connecting film COF. Although Figure 2 A data driver DIC is shown disposed on the lower surface of the connecting membrane COF, but the implementation is not limited thereto, and the data driver DIC may be disposed on the upper surface of the connecting membrane COF.
[0042] The non-display area NDA surrounding the display area DA can be a border area.
[0043] The display device 1 may further include a first pad PAD1 in the first pad region PA1. The first pad PAD1 may be positioned in relation to... Figure 6 or Figure 7 The thin-film transistors 31, 32, and 33 shown are on the same layer as one of the conductive layers, one of the reflective electrodes 42a, 42b, and 42c, or one of the anode electrodes 41a, 41b, and 41c shown; however, the embodiments described herein are not limited thereto.
[0044] Lead electrodes can be disposed on the lower surface of the connecting film COF. A first lead electrode RE1 is shown among the lead electrodes. An anisotropic conductive film ACF can be disposed between the first lead electrode RE1 and the first pad PAD1. The anisotropic conductive film ACF may include conductive balls CB dispersed in resin SR. The resin SR may include an organic material with adhesive properties. The first pad PAD1 and the first lead electrode RE1 can be electrically connected through the conductive balls CB therebetween. The resin SR can contact the side and lower surfaces of the first lead electrode RE1 and the side and upper surfaces of the first pad PAD1 for bonding the first pad PAD1 and the first lead electrode RE1.
[0045] The printed circuit board (PCB) can be connected to the second pad area PA2 of the connecting film COF.
[0046] Figure 3 It is shown Figure 1 A plan view of the substrate, connecting film, and printed circuit board.
[0047] Reference Figure 3 The substrate 2 may include a first pad region PA1, and a plurality of first pads may be provided on the first pad region PA1. The first pads may include a first low voltage pad PAD1_VSS, a first reference voltage pad PAD1_REF, a first data pad PAD1_DATA, etc., but the embodiments described in this specification are not limited thereto.
[0048] One end of the connecting film COF can be connected to the first pad area PA1. Multiple first lead electrodes can be provided at one end of the connecting film COF. The first lead electrodes may include a first low-voltage lead electrode RE1_VSS, a first reference voltage lead electrode RE1_REF, a first data lead electrode RE1_DATA, etc., but the embodiments described in this specification are not limited to these. The first low-voltage lead electrode RE1_VSS and the first low-voltage pad PAD1_VSS can be electrically connected, the first reference voltage lead electrode RE1_REF and the first reference voltage pad PAD1_REF can be electrically connected, and the first data lead electrode RE1_DATA and the first data pad PAD1_DATA can be electrically connected.
[0049] The data driver DIC can be disposed on the connection film COF. The first low voltage lead electrode RE1_VSS, the first reference voltage lead electrode RE1_REF, and the first data lead electrode RE1_DATA can each be electrically connected to the data driver DIC.
[0050] The other end of the connecting film COF can be connected to the second pad area PA2. The printed circuit board (PCB) may include the second pad area PA2 and may be connected to the other end of the connecting film COF. Multiple second lead electrodes may be provided at the other end of the connecting film COF. The second lead electrodes may include a second low-voltage lead electrode RE2_VSS, a second reference voltage lead electrode RE2_REF, a second data lead electrode RE2_DATA, etc., but the embodiments described in this specification are not limited thereto.
[0051] Multiple second pads can be set in the second pad area PA2. The second pads may include a second low voltage pad PAD2_VSS, a second reference voltage pad PAD2_REF, a second data pad PAD2_DATA, etc., but the implementation in this specification is not limited to these.
[0052] The second low-voltage lead electrode RE2_VSS and the second low-voltage pad PAD2_VSS can be electrically connected, the second reference voltage lead electrode RE2_REF and the second reference voltage pad PAD2_REF can be electrically connected, and the second data lead electrode RE2_DATA and the second data pad PAD2_DATA can be electrically connected.
[0053] The second low-voltage lead electrode RE2_VSS, the second reference voltage lead electrode RE2_REF, and the second data lead electrode RE2_DATA can each be electrically connected to the data driver DIC.
[0054] The first low-voltage pad PAD1_VSS can be electrically connected to the low-voltage line VSSL, the first reference voltage pad PAD1_REF can be electrically connected to the reference voltage line RL, and the first data pad PAD1_DATA can be electrically connected to the data line DL.
[0055] Figure 4 This is a circuit diagram of the pixel according to the implementation method.
[0056] Figure 4 A circuit diagram of pixel 20 according to an embodiment is shown. Figure 5 The circuit diagrams for each sub-pixel 21, 22, and 23 are shown below. Figure 4 The circuit diagram for pixel 20 is the same.
[0057] Each sub-pixel can receive a data voltage VDATA via a digital-to-analog converter (DAC). The sensed voltage VSEN output from each sub-pixel is provided to the analog-to-digital converter (ADC). A high-level voltage EVDD and a low-level voltage EVSS can be applied to each sub-pixel.
[0058] Each sub-pixel includes a scanning transistor T2, a driving transistor T1, and a sensing transistor T3. Additionally, each sub-pixel includes a storage capacitor CST and an organic light-emitting device (OLED).
[0059] The first electrode (e.g., the drain electrode) of the scan transistor T2 is connected to the data line DL, which provides the data voltage VDATA. The data voltage VDATA is drawn from the data driver DIC. Figure 3 The data voltage VDATA applied via the data line DL is transmitted to the data line CST. The second electrode (e.g., the source electrode) of the scan transistor T2 is connected to one end of the storage capacitor CST and the gate electrode of the drive transistor T1. The gate electrode of the scan transistor T2 is connected to the scan line to which the scan signal SCAN is applied. That is, when a gate signal at the gate-on level is applied via the scan signal SCAN, the scan transistor T2 is turned on, and the data voltage VDATA applied via the data line DL is transmitted to one end of the storage capacitor CST.
[0060] One end of the storage capacitor CST is connected to the second electrode of the scan transistor T2. The other end of the storage capacitor CST is connected to the second electrode (e.g., the drain electrode) of the sensing transistor T3 and the second electrode of the drive transistor T1. The storage capacitor CST can be charged with a voltage corresponding to the difference between the voltage applied to one end and the reference voltage VREF applied to the other end via the switch SPRE and the sensing transistor T3. The reference voltage VREF is applied to the reference voltage line RL.
[0061] The first electrode (e.g., drain electrode) of the driving transistor T1 is configured to receive a high potential voltage EVDD, and the second electrode (e.g., source electrode) is connected to the first electrode (e.g., anode electrode) of the organic light-emitting device (OLED). The third electrode (e.g., gate electrode) of the driving transistor T1 is connected to one end of the storage capacitor CST. The driving transistor T1 can control the amount of driving current flowing through the OLED in response to the voltage supplied to the gate electrode. That is, the current applied to the OLED is determined by the voltage difference in the gate-source voltage Vgs of the driving transistor T1 (or the storage voltage of the storage capacitor CST).
[0062] The first electrode (e.g., the source electrode) of the sensing transistor T3 is connected to the reference voltage line RL, the second electrode (e.g., the drain electrode) is connected to the other end of the storage capacitor CST, and the third electrode (e.g., the gate electrode) is supplied with a sensing signal SENSE. That is, the sensing transistor T3 is driven by the gate driver (reference voltage line RL). Figure 1The sensing signal SENSE output by the GIP in the circuit is turned on, and the reference voltage VREF is applied to the other end of the storage capacitor CST. When both switches SPRE and SAM are turned off and the sensing transistor T3 is turned on, the stored voltage of the storage capacitor CST can be transferred to the capacitor connected to the reference voltage line RL, and the sensed voltage VSEN is stored in the capacitor of the reference voltage line RL.
[0063] When switch SPRE is off and switch SAM is on, the sensed voltage VSEN can be output to the data driver via the analog-to-digital converter (ADC) (see reference). Figure 3 (DIC in the middle).
[0064] Figure 5 yes Figure 1 A planar image of pixels. Figure 6 It is along Figure 5 The cross-sectional view taken by line B-B'. Figure 7 It is along Figure 5 The cross-sectional view taken from line C-C'.
[0065] Reference Figures 5 to 7 The display device 1 according to the embodiment includes a substrate 2, a first electrode 4, a common light-emitting layer 5, and a cathode electrode 6.
[0066] Multiple sub-pixels 21, 22, and 23 are formed on substrate 2. These multiple sub-pixels 21, 22, and 23 can constitute a single pixel 20. Figure 1 Multiple panel pixels can be formed on substrate 2.
[0067] The plurality of sub-pixels 21, 22 and 23 include a first sub-pixel 21, a second sub-pixel 22 and a third sub-pixel 23. By arranging the first sub-pixel 21, the second sub-pixel 22 and the third sub-pixel 23 in sequence, the second sub-pixel 22 may be adjacent to one side (e.g. the right side) of the first sub-pixel 21, and the third sub-pixel 23 may be adjacent to one side (e.g. the right side) of the second sub-pixel 22.
[0068] Throughout the specification, the phrase "two subpixels are arranged adjacent to each other" should be interpreted as meaning that no other subpixels are placed between the two subpixels.
[0069] The first sub-pixel 21 can be configured to emit red (R) light, the second sub-pixel 22 can be configured to emit green (G) light, and the third sub-pixel 23 can be configured to emit blue (B) light, but it is not limited to these colors.
[0070] exist Figure 5In the diagram, a pixel is shown as comprising only three subpixels 21, 22, and 23, but is not limited to this configuration, and a pixel may include four subpixels. When a pixel comprises four subpixels, it may also include a fourth subpixel configured to emit white (W) light.
[0071] The first to third sub-pixels 21, 22, and 23 can each be configured to have the same size. For example, the first to third sub-pixels 21, 22, and 23 can each be configured to have the same width and height. Here, the width can refer to... Figure 1 The horizontal direction (first direction DR1), the height can refer to the ...). Figure 1 The direction perpendicular to the width (second direction DR2) is not limited to this, but the embodiments described in this specification are not limited to this.
[0072] Each sub-pixel 21, 22, and 23 may include a light-emitting region (EA1, EA2, EA3) and a non-light-emitting region (NEA1, NEA2, NEA3). The first sub-pixel 21 may include a first light-emitting region EA1 and a first non-light-emitting region NEA1 surrounding the first light-emitting region EA1; the second sub-pixel 22 may include a second light-emitting region EA2 and a second non-light-emitting region NEA2 surrounding the second light-emitting region EA2; and the third sub-pixel 23 may include a third light-emitting region EA3 and a third non-light-emitting region NEA3 surrounding the third light-emitting region EA3. The light-emitting regions EA1, EA2, and EA3 may correspond to the areas exposed by the embankments BK of the anode electrodes 41a, 41b, and 41c, which will be described later, but embodiments described in this specification are not limited thereto.
[0073] The first electrode 4 is patterned for each individual panel sub-pixel 21, 22, and 23. That is, a single first electrode 4 is formed in the first sub-pixel 21, another first electrode 4 is formed in the second sub-pixel 22, and yet another first electrode 4 is formed in the third sub-pixel 23. The first electrode 4 can serve as the anode of the display device 1. The first electrode 4 may include a reflective electrode and an anode electrode. An anode electrode 41 and a reflective electrode 42 may be provided for each sub-pixel 21, 22, and 23. The anode electrode 41 includes a first anode electrode 41a provided in the first sub-pixel 21, a second anode electrode 41b provided in the second sub-pixel 22, and a third anode electrode 41c provided in the third sub-pixel 23, while the reflective electrode 42 may include a first reflective electrode 42a provided in the first sub-pixel 21, a second reflective electrode 42b provided in the second sub-pixel 22, and a third reflective electrode 42c provided in the third sub-pixel 23.
[0074] Each anode electrode 41a, 41b, and 41c may have a dam BK disposed thereon, as described later. The dam BK may be configured to cover the edges of the anode electrodes 41a, 41b, and 41c disposed in the first sub-pixel to the third sub-pixel 21, 22, and 23, thereby distinguishing the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23. The dam BK may be disposed in the non-light-emitting areas NEA1, NEA2, and NEA3.
[0075] The display device 1 includes reflective electrodes 42a, 42b and 42c with different surface heights for each sub-pixel 21, 22 and 23, thereby further improving the light extraction efficiency by utilizing the microcavity characteristics.
[0076] The microcavity characteristic refers to the following phenomenon: when the distance between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6 is an integer multiple of half the wavelength (λ / 2) of the light emitted from the sub-pixels 21, 22, and 23, constructive interference occurs, thereby amplifying the light. Furthermore, the repeated reflection and re-reflection process between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6 continuously increases the amplification, thereby improving the external light extraction efficiency.
[0077] The common light-emitting layer 5 can be configured to emit white light. For example, the common light-emitting layer 5 can be configured as a 2-stacked structure including a blue light-emitting layer, a yellow-green light-emitting layer and a charge generation layer, or as a 3-stacked structure including a blue light-emitting layer, a green light-emitting layer, a red light-emitting layer and a charge generation layer to emit white light. However, it is not limited to these configurations, and more than three stacked layers can be provided, as long as they are capable of emitting white light.
[0078] The common light-emitting layer 5 can be formed as a common layer extending across all first panel sub-pixels to third panel sub-pixels 21, 22 and 23.
[0079] The cathode electrode 6 is used to form an electric field with the anode electrodes 41a, 41b and 41c, and can also be used as a cathode. The cathode electrode 6 is disposed on the upper surface of the common light-emitting layer 5, opposite to the lower surface that contacts the anode electrodes 41a, 41b and 41c, and can be configured as a common layer spanning all the first sub-pixels to the third sub-pixels 21, 22 and 23.
[0080] In the top-emitting configuration, the cathode electrode 6 can be configured as the second electrode; however, in the bottom-emitting method, the cathode electrode 6 can be configured as the first electrode including a reflective material. In the top-emitting configuration, the cathode electrode 6 can be formed as a semi-transparent electrode to improve light extraction efficiency using microcavity characteristics. As an example, the display device 1 utilizes microcavity characteristics to improve light extraction efficiency in the top-emitting configuration, which is why the cathode electrode 6 is formed as a semi-transparent electrode.
[0081] A color filter layer 9 is provided on each of the first to third sub-pixels 21, 22, and 23 to block light of a predetermined color emitted by the common light-emitting layer 5 of each sub-pixel 21, 22, and 23. The first color filter 91 provided in the first sub-pixel 21 can be configured to block all colors except red (R) light. In this case, the first color filter 91 can be a red color filter. The second color filter 92 provided in the second sub-pixel 22 can be configured to block all colors except green (G) light. In this case, the second color filter 92 can be a green color filter. The third color filter 93 provided in the third sub-pixel 23 can be configured to block all colors except blue (B) light. In this case, the third color filter 93 can be a blue color filter. However, the embodiments described in this specification are not limited to these.
[0082] The first to third color filters 91, 92 and 93 set in each of the first to third sub-pixels 21, 22 and 23 can be configured to have the same size as the respective sub-pixels, or can be enlarged or reduced by a certain proportion of the size of each sub-pixel.
[0083] Transistors 31, 32, and 33 can be disposed in the non-light-emitting areas NEA1, NEA2, and NEA3 of each sub-pixel 21, 22, and 23. For example, transistors 31, 32, and 33 can overlap with reflective electrodes 42a, 42b, and 42c disposed in each sub-pixel 21, 22, and 23. Transistors 31, 32, and 33 can be electrically connected to reflective electrodes 42a, 42b, and 42c.
[0084] The following provides a detailed description of the laminated structure of the display device 1 according to an embodiment.
[0085] The display device 1 according to the embodiment includes a substrate 2, an insulating layer 3, a first electrode 4, a diaphragm BK, a common light-emitting layer 5, a cathode electrode 6, a cover layer 7, an encapsulation layer 8, and a color filter layer 9.
[0086] The substrate 2 can be made of semiconductor materials such as plastic film, glass substrate or silicon.
[0087] The substrate 2 can be made of transparent or opaque material. Subpixels 21, 22 and 23 are disposed on the substrate 2. The first subpixel 21 can emit red (R) light, the second subpixel 22 can emit blue (B) light, and the third subpixel 23 can emit green (G) light.
[0088] In this embodiment, the display device 1 is configured using a so-called top-emitting method, wherein the emitted light is released upwards; therefore, the substrate 2 can be made of a transparent or opaque material. As mentioned above, color filters 91, 92, and 93 can be provided above the first to third sub-pixels 21, 22, and 23 to transmit light of various colors.
[0089] An insulating layer 3 is formed on the substrate 2. The insulating layer 3 may include an inorganic insulating material. The insulating layer 3 may include a first insulating layer 3a, a second insulating layer 3b on the first insulating layer 3a, and a third insulating layer 3c on the second insulating layer 3b.
[0090] The insulating layer 3 includes circuit elements disposed for each sub-pixel 21, 22, and 23, such as multiple thin-film transistors 31, 32, and 33, various signal lines, and capacitors. The first insulating layer 3a may have the thin-film transistors 31, 32, and 33 disposed therein. The signal lines may include gate lines, data lines, power lines, and reference voltage lines, and the thin-film transistors 31, 32, and 33 may include switching transistors, driving transistors, and sensing transistors. Each of the sub-pixels 21, 22, and 23 is defined by an intersection structure of gate lines and data lines. The insulating layer 3 may surround the thin-film transistors 31, 32, and 33.
[0091] The switching transistor is switched according to the gate signal provided to the gate line to provide the data voltage from the data line to the driving transistor.
[0092] The driving transistor switches according to the data voltage provided from the switching transistor, generates a data current from the power supplied through the power line, and then provides it to the first electrode 4.
[0093] The sensing transistor is used to sense the threshold voltage deviation of the driving transistor that causes image quality degradation, and in response to a sensing control signal provided from the gate line or a separate sensing line, provides current from the driving transistor to the reference voltage line.
[0094] The capacitor is used to maintain the data voltage supplied to the driving transistor within a frame, and is connected to the gate terminal and source terminal of the driving transistor, respectively.
[0095] For each individual sub-pixel 21, 22, and 23, a first thin-film transistor 31, a second thin-film transistor 32, and a third thin-film transistor 33 are arranged in the first insulating layer 3a. The first thin-film transistor 31 is connected to a first electrode 4 disposed on the first sub-pixel 21 and can be driven by a voltage to emit light of a color corresponding to the first sub-pixel 21. The first thin-film transistor 31, the second thin-film transistor 32, and the third thin-film transistor 33 may be located in the same thin-film transistor layer, but the embodiments described in this specification are not limited thereto.
[0096] The second thin-film transistor 32 is connected to the first electrode 4 disposed on the second sub-pixel 22, and can be driven by a voltage to emit light of a color corresponding to the second sub-pixel 22.
[0097] The third thin-film transistor 33 is connected to the first electrode 4 disposed on the third sub-pixel 23, and can be driven by a voltage to emit light of a color corresponding to the third sub-pixel 23.
[0098] When a gate signal (or scan signal) is input from a gate line (or scan line), each of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 uses its respective transistors 31, 32, and 33 to provide a predetermined current to the light-emitting layer according to the data voltage of the data line. Therefore, the light-emitting layers of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 can emit light at a predetermined brightness according to the provided current.
[0099] Insulating layer 3 protects transistors 31, 32, and 33. Insulating layer 3 can be made of inorganic insulating materials, but is not limited to this, and can also be made of organic insulating materials. For example, insulating layer 3 can be made of inorganic materials such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (Al2O3), but the embodiments described herein are not limited to these materials. The first insulating layer 3a, the second insulating layer 3b, and the third insulating layer 3c can be made of inorganic materials such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (Al2O3), but the embodiments described herein are not limited to this.
[0100] Multiple reflective electrode layers can be arranged on the insulating layer 3. The reflective electrode layers may include a first reflective electrode layer on the first insulating layer 3a, a second reflective electrode layer on the second insulating layer 3b, and a third reflective electrode layer on the third insulating layer 3c. The first reflective electrode layer may include a first reflective electrode 42a and a first connecting electrode 42a', the second reflective electrode layer may include a second reflective electrode 42b, and the third reflective electrode layer may include a third reflective electrode 42c and a second connecting electrode 42c'. The first reflective electrode 42a and the first connecting electrode 42a' may be arranged in the same layer and may contain the same material. The third reflective electrode 42c and the second connecting electrode 42c' may also be disposed in the same layer and may contain the same material.
[0101] Each reflective electrode layer may include a reflective material for reflecting light. For example, the reflective material may be a metal, but is not limited to this, and any other material capable of reflecting light may also be used. For example, the reflective material may include aluminum (Al) or silver (Ag), but the embodiments described in this specification are not limited to this.
[0102] The reflective electrode 42 is positioned relatively lower than the common light-emitting layer 5, allowing light emitted from the common light-emitting layer 5 to be reflected upwards. Here, the upward direction refers to the direction in which the user perceives the light, which could be, for example, the side where the encapsulation layer 8 or the color filter layer 9 is located. Therefore, compared to the absence of the reflective electrode 42, the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 can achieve higher light efficiency, and through the improved light efficiency, the user can perceive higher brightness, i.e., a clearer image.
[0103] The first reflective electrode 42a can be disposed on the first insulating layer 3a in the first light-emitting region EA1 and the first non-light-emitting region NEA1 of the first sub-pixel 21. The second reflective electrode 42b can be disposed on the first insulating layer 3a in the second light-emitting region EA2 and the second non-light-emitting region NEA2 of the second sub-pixel 22. The third reflective electrode 42c can be disposed on the first insulating layer 3a in the third light-emitting region EA3 and the third non-light-emitting region NEA3 of the third sub-pixel 23. In each non-light-emitting region NEA1, NEA2, and NEA3, the first reflective electrode 42a and the first connecting electrode 42a' can be electrically connected to each transistor 31, 32, and 33.
[0104] A second insulating layer 3b may be disposed on top of the first reflective electrode 42a and the first connecting electrode 42a'. The second insulating layer 3b may reflect the steps created by the thickness of the first reflective electrode 42a and the first connecting electrode 42a'.
[0105] A second reflective electrode 42b can be disposed on the second insulating layer 3b. The second reflective electrode 42b can be disposed in the second sub-pixel 22. The second reflective electrode 42b may not overlap with the second transistor 32.
[0106] A third insulating layer 3c can be provided on the second reflective electrode 42b. The third insulating layer 3c can reflect the step caused by the thickness of the second reflective electrode 42b.
[0107] A third reflective electrode 42c and a second connecting electrode 42c' can be disposed on the third insulating layer 3c. The third reflective electrode 42c can be disposed in the third sub-pixel 23, and the second connecting electrode 42c' can be disposed in the first sub-pixel 21 and the second sub-pixel 22, respectively. The third reflective electrode 42c in the third sub-pixel 23 can be connected to the first connecting electrode 42a' through the first contact hole CT1 in the third non-light-emitting area NEA3. The second connecting electrode 42c' can be connected to the first reflective electrode 42a and the first connecting electrode 42a' in the non-light-emitting areas NEA1 and NEA2, respectively, through the first contact hole CT1. The second reflective electrode 42b can be in a floating state.
[0108] Trench portions of the TRP can be formed in the insulating layer 3. For example, the trench portions of the TRP can be formed in the non-light-emitting regions NEA1, NEA2, and NEA3. Figure 6 and Figure 7 As shown, the trench portion TRP can be formed by penetrating portions of the third insulating layer 3c and the second insulating layer 3b, but the embodiments described in this specification are not limited to this. In the display device 1 according to the embodiment, since the trench portion TRP is formed between adjacent sub-pixels 21, 22 and 23, the lateral leakage current LLC caused by the common light-emitting layer 5 between adjacent sub-pixels 21, 22 and 23 can be improved.
[0109] like Figure 6 As shown, in the light-emitting regions EA1, EA2, and EA3, the distances between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6 can be different from each other. For example, the distance between the first reflective electrode 42a and the cathode electrode 6 can be the largest, followed by the distance between the second reflective electrode 42b and the cathode electrode 6, and the distance between the third reflective electrode 42c and the cathode electrode 6 can be the smallest.
[0110] In this way, reflective electrodes 42a, 42b, and 42c are formed at different distances (or resonant distances) from the cathode electrode 6. Because, depending on the spacing, the reflection and re-reflection between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6 can improve the light extraction efficiency of different colors of light. Therefore, the light extraction efficiency of red light can be improved in the first sub-pixel 21, the light extraction efficiency of green light can be improved in the second sub-pixel 22, and the light extraction efficiency of blue light can be improved in the third sub-pixel 23.
[0111] The anode electrode 41 may include a first anode electrode 41a of the first sub-pixel 21, a second anode electrode 41b of the second sub-pixel 22, and a third anode electrode 41c of the third sub-pixel 23. The anode electrodes 41a, 41b, and 41c are disposed on the anode electrode layer, arranged in the same layer, and may include the same material.
[0112] In the third light-emitting region EA3 of the third sub-pixel 23, the third anode electrode 41c can be directly disposed on the third reflective electrode 42c. In the non-light-emitting regions NEA1 and NEA2 of the first sub-pixel 21 and the second sub-pixel 22, the anode electrodes 41a and 41b can be directly disposed on the second connecting electrode 42c'.
[0113] Each of the anode electrodes 41a, 41b and 41c can be electrically connected to the thin-film transistors 31, 32 and 33 in each of the non-light-emitting regions NEA1, NEA2 and NEA3.
[0114] Anode electrodes 41a, 41b, and 41c may comprise materials with high light transmittance. For example, anode electrodes 41a, 41b, and 41c may comprise ITO, IZO, or TiN, but are not limited thereto.
[0115] A dam BK can be disposed on the anode electrodes 41a, 41b, and 41c. The dam BK can be made of inorganic materials such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (Al2O3), but the embodiments described in this specification are not limited to these materials. The dam BK can be disposed on the non-light-emitting regions NEA1, NEA2, and NEA3.
[0116] In the light-emitting regions EA1, EA2, and EA3, the dam BK can expose the upper surfaces of the anode electrodes 41a, 41b, and 41c, thereby defining the light-emitting regions EA1, EA2, and EA3. For example... Figure 6 As shown, the dam BK can contact the upper and side surfaces of the anode electrodes 41a, 41b, and 41c. Figure 7 As shown, in the non-light-emitting regions NEA1, NEA2, and NEA3, the dam BK can cover the entire upper surface of the anode electrodes 41a, 41b, and 41c, and in the light-emitting regions EA1, EA2, and EA3, the dam BK can expose the upper surface of the anode electrodes 41a, 41b, and 41c.
[0117] A common light-emitting layer 5 is formed on the anode electrodes 41a, 41b, 41c and the embankment BK. The common light-emitting layer 5 can contact the upper surfaces of the anode electrodes 41a, 41b, 41c. The common light-emitting layer 5 can directly contact the upper surfaces of the anode electrodes 41a, 41b, 41c, the upper and side surfaces of the embankment BK, and the side surface of the insulating layer 3. The common light-emitting layer 5 can also extend into the trench portion TRP.
[0118] According to one embodiment, an organic light-emitting device (OLED) may include a first electrode 4, ANO; a cathode electrode 6, CAT; and a common light-emitting layer 5 between the first electrode 4 and the cathode electrode 6.
[0119] The common light-emitting layer 5 can be configured to emit white (W) light. To achieve this, the common light-emitting layer 5 may include multiple stacks that emit different colors of light. Specifically, the common light-emitting layer 5 may include a first stack, a second stack, and a charge generation layer CGL disposed between the first stack and the second stack.
[0120] A cathode electrode 6 is formed on the common light-emitting layer 5. The cathode electrode 6 can be used as the cathode of the display device 1. Similar to the common light-emitting layer 5, the cathode electrode 6 is formed in each of the sub-pixels 21, 22 and 23 and between the sub-pixels 21, 22 and 23.
[0121] In one embodiment, the display device 1 may have a cathode electrode 6 made of a semi-transparent electrode to achieve white light with high luminous efficiency in a top-emitting configuration. Therefore, a microcavity effect can be achieved for each of the first to third sub-pixels 21, 22, and 23. The microcavity effect can be achieved through repeated reflections and re-reflections of light between the cathode electrode 6 and the reflective electrode 42, which improves light extraction efficiency.
[0122] Meanwhile, since the cathode electrode 6 is formed on the upper surface of the common light-emitting layer 5, it can be shaped according to the contour of the common light-emitting layer 5. Because the common light-emitting layer 5 is formed following the contour of the first electrode 4 in the light-emitting area, the cathode electrode 6 can ultimately be formed to follow the contour of the first electrode 4. Furthermore, the capping layer 7 on the cathode electrode 6 can also be formed to follow the contour of the cathode electrode 6.
[0123] The capping layer 7 can be made of inorganic insulating material, but is not limited to this. The capping layer 7 can be disposed on the cathode electrode 6 to protect the organic light-emitting device (OLED).
[0124] An encapsulation layer 8 is formed on the cathode electrode 6 to prevent external moisture from penetrating into the common light-emitting layer 5. The encapsulation layer 8 may be made of an inorganic insulating material, or may be formed as an alternating stacked structure of inorganic and organic insulating materials, but is not limited to these configurations.
[0125] A color filter layer 9 is formed on the encapsulation layer 8. The color filter layer 9 may include, but is not limited to, a first color filter 91 for red (R) disposed in the first sub-pixel 21, a second color filter 92 for green (G) disposed in the second sub-pixel 22, and a third color filter 93 for blue (B) disposed in the third sub-pixel 23.
[0126] Figure 8 yes Figure 6 A cross-sectional view of the organic light-emitting device in the image. Figure 9 It is based on the alternative implementation method Figure 6 A cross-sectional view of an organic light-emitting element.
[0127] Reference Figures 1 to 8 The common light-emitting layer 5 can be formed as including a first stacked EL1, a second stacked EL2 and a first charge generation layer CGL1 disposed on the first electrode 4.
[0128] The first stack EL1 is disposed on the first electrode 4 and may have the following structure: wherein the hole injection layer HIL, the hole transport layer HTL, the blue (B) emitting layer EML1 and the electron transport layer ETL are stacked sequentially.
[0129] The first stack EL1 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23.
[0130] The first charge generation layer CGL1 is used to provide charge to the first stack EL1 and the second stack EL2. The first charge generation layer CGL1 may include an N-type charge generation layer that provides electrons to the first stack EL1 and a P-type charge generation layer that provides holes to the second stack EL2. The N-type charge generation layer may be made by doping with a metallic material.
[0131] The second stack EL2 is disposed on the first stack EL1 and may have the following structure: wherein the hole transport layer HTL, the yellow-green (YG) emitter layer EML2, the electron transport layer ETL and the electron injection layer EIL are stacked sequentially.
[0132] The second stack EL2 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23.
[0133] Therefore, the common light-emitting layer 5 can be set as a common layer spanning all first sub-pixels to third sub-pixels 21, 22, and 23, as follows: Figure 6 and Figure 7 As shown.
[0134] like Figure 9 As shown, the common light-emitting layer 5' of the organic light-emitting device (OLED) according to the embodiment may include a first stack EL1, a second stack EL2, a third stack EL3 disposed on the first electrode 4, a first charge generation layer CGL1 between the first stack EL1 and the second stack EL2, and a second charge generation layer CGL2 between the second stack EL2 and the third stack EL3.
[0135] The first stack EL1 is disposed on the first electrode 4 and may have the following structure: wherein the hole injection layer HIL, the hole transport layer HTL, the blue (B) emitting layer EML1 and the electron transport layer ETL are stacked sequentially.
[0136] The first stack EL1 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23, that is, on the embankment BK.
[0137] The first charge generation layer CGL1 is used to provide charge to the first stack EL1 and the second stack EL2. The first charge generation layer CGL1 may include an N-type charge generation layer that provides electrons to the first stack EL1 and a P-type charge generation layer that provides holes to the second stack EL2. The N-type charge generation layer may be made by doping with a metallic material.
[0138] The second stack EL2 is disposed on the first stack EL1 and may have the following structure: wherein the hole transport layer HTL, the green (G) emitting layer EML2 and the electron transport layer ETL are stacked sequentially.
[0139] The second stack EL2 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23, that is, on the embankment BK.
[0140] The second charge generation layer CGL2 is used to provide charge to the second stack EL2 and the third stack EL3. The second charge generation layer CGL2 may include an N-type charge generation layer that provides electrons to the second stack EL2 and a P-type charge generation layer that provides holes to the third stack EL3. The N-type charge generation layer may be made by doping with a metallic material.
[0141] The third stack EL3 is disposed on the second stack EL2 and may have the following structure: wherein the hole transport layer HTL, the red (R) emitting layer EML3, the electron transport layer ETL and the electron injection layer EIL are stacked sequentially.
[0142] like Figures 1 to 9 As shown, charge generation layers CGL1 and CGL2 can be disposed between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23. Meanwhile, in the display device 1 according to the embodiment, since the common light-emitting layer 5 is disposed between each of the sub-pixels 21, 22, and 23, when any of the sub-pixels emits light, lateral leakage current may occur to adjacent sub-pixels 21, 22, and 23 through the charge generation layers CGL1 and CGL2; however, a trench portion TRP can be formed between the sub-pixels 21, 22, and 23. The formation length of the common light-emitting layer 5 at the boundaries of the sub-pixels 21, 22, and 23 can be increased by the trench portion TRP, thereby extending the current path. Therefore, lateral leakage current can be prevented. Furthermore, by separating the common light-emitting layer 5 in the trench portion TRP, lateral leakage current can be prevented in advance.
[0143] Refer again Figure 6 and Figure 7 A cathode electrode 6 is formed on the common light-emitting layer 5, an encapsulation layer 8 is formed on the cathode electrode 6, and a color filter layer 9 is formed on the encapsulation layer 8.
[0144] Although not shown in the figure, a black matrix can be set between the first color filter and the third color filter 91, 92 and 93 to prevent color mixing between sub-pixels.
[0145] In the display device 1 according to the embodiment, the second reflective conductive layer may not be provided in the area overlapping with the contact portion. Figure 7In transistors 31, 32, and 33, the second reflective electrode 42b may not be located in the contact portion. Therefore, the anode electrodes 41a, 41b, and 41c of each sub-pixel 21, 22, and 23 can be connected to transistors 31, 32, and 33 via the third reflective conductive layer and the first reflective conductive layer. In other words, by reducing the number of conductive layers (or electrodes) at the contact portion (omitting the second reflective conductive layer), the step difference at the contact portion can be mitigated. This minimizes the thickness variation of the common light-emitting layer 5 at the contact portion. For example, when three or more reflective conductive layers are provided at the contact portion, the insulating layer 3 may reflect the step difference caused by the thickness of the underlying conductive layer (or electrode), which may lead to a thickness variation of the common light-emitting layer 5 at the contact portion. In this case, a color deviation may occur between the light emitted from the common light-emitting layer 5 in the non-light-emitting regions NEA1, NEA2, and NEA3 and the light emitted from the common light-emitting layer 5 in the light-emitting regions EA1, EA2, and EA3. Although a dam BK is provided in the non-light-emitting areas NEA1, NEA2, and NEA3, some light can pass through the dam BK, which may reduce the color purity of each sub-pixel 21, 22, and 23 when viewed from the outside, thereby reducing the luminous efficiency of the organic light-emitting device (OLED).
[0146] However, according to the implementation method, since the step difference at the contact portion is reduced, the luminous efficiency of the OLED can be improved and abnormal color deviation can be minimized.
[0147] In addition, such as Figure 7 As shown, the area of the light-emitting regions EA1, EA2 and EA3 can be increased because the number of conductive layers (or electrodes) at the contact portions overlapping with transistors 31, 32 and 33 is reduced and the number of contact holes is minimized.
[0148] In the following description, a display device according to other embodiments will be provided. References will be omitted in the description of the following embodiments. Figures 1 to 9 A detailed description of the same or similar configuration is provided to avoid redundancy.
[0149] Figure 10 It is a planar view of pixels according to another embodiment.
[0150] according to Figure 10 The display device 1_1 according to the embodiment and the method of implementation Figure 5 The difference in the implementation of the display device 1 is that a fixed voltage is applied to the second reflective electrode 42b_1 of the first electrode 42_1 of the second sub-pixel 22.
[0151] More specifically, in this embodiment, a low-potential voltage line VSSL can be arranged in the non-display area NDA of the substrate 2. The second reflective electrode 42b_1 of the second sub-pixel 22 can be electrically connected to the low-potential voltage line VSSL through the second contact hole CT2. In this embodiment, each of the sub-pixels 21, 22, and 23 can be repeatedly arranged along the second direction DR2. For example, located in Figure 10 The second reflective electrode 42b_1 of the second sub-pixel 22 in the first row and the second reflective electrode 42b_1 of the second sub-pixel 22 in the second row can be physically connected. That is, in this embodiment, the second reflective electrodes 42b_1 of all second sub-pixels 22 can be provided with a low potential voltage EVSS (Effective Voltage Suppression). Figure 4 ).
[0152] In some implementations, the second reflective electrode 42b_1 of the second sub-pixel 22 can be connected to the reference voltage line RL. Figure 4 Therefore, the second reflective electrode 42b_1 can be provided with a reference voltage VREF. Figure 4 ).
[0153] According to this embodiment, since a fixed voltage (EVSS or VREF) is applied to the second reflective electrode 42b_1, there is an advantage that the voltage of the second reflective electrode 42b_1 can be stabilized, thereby preventing the organic light-emitting device (OLED) from facilitating the emission of light in advance. Figure 4 Defects occurred during operation.
[0154] Figure 11 It is a planar view of pixels according to another embodiment. Figure 12 It is along Figure 11 The cross-sectional view taken by line D-D'.
[0155] according to Figure 11 and Figure 12 The display device 1_2 according to the embodiment and the method Figure 5 and Figure 7 The difference in the implementation of the display device 1 is that the first electrode 4_2 includes a reflective electrode 42_2.
[0156] More specifically, the reflective electrode 42_2 includes a second reflective electrode 42b_2, and in the second sub-pixel 22, the second reflective electrode 42b_2 may overlap with the first connecting electrode 42a'_1. The area of the second non-light-emitting region NEA2 in the second sub-pixel 22 may be greater than [missing information]. Figure 5 and Figure 7 The area of the second non-luminescent region NEA2 in the image.
[0157] In the second sub-pixel 22, the first connecting electrode 42a'_1 can be electrically connected to the second reflective electrode 42b_2 via the third contact hole CT3. The embankment BK can cover the second reflective electrode 42b_2.
[0158] According to this embodiment, the second reflective electrode 42b_2 is electrically connected to the first connecting electrode 42a'_1, thereby stabilizing the voltage of the second reflective electrode 42b_2, which can prevent any malfunctions when driving the organic light-emitting device OLED_2.
[0159] Figure 13 It is a planar view of pixels according to another embodiment. Figure 14 It is along Figure 13 The cross-sectional view taken from line E-E'.
[0160] according to Figure 13 and Figure 14 The display device 1_3 according to the embodiment and the method Figure 11 and Figure 12 The difference in the implementation of the display device 1_2 is that the anode electrodes 41a, 41b and 41c of each sub-pixel 21, 22 and 23 are directly connected to the first reflective electrode 42a or the first connecting electrode 42a'_1, 42a'.
[0161] Specifically, in the first sub-pixel 21, the second connecting electrode is omitted, and the first anode electrode 41a is directly connected to the first reflective electrode 42a through the first contact hole CT1; in the second sub-pixel 22, the third connecting electrode is omitted, and the second anode electrode 41b is directly connected to the first connecting electrode 42a'_1 through the first contact hole CT1, while the second reflective electrode 42b_2 is directly connected to the first connecting electrode 42a'_1 through the third contact hole CT3. In the third sub-pixel 23, the third reflective electrode 42c is directly connected to the first connecting electrode 42a' through the first contact hole CT1.
[0162] According to this embodiment, the second reflective conductive layer may not be disposed in the area overlapping with the contact portion. Figure 14(Transistors 31, 32, and 33 in the image). That is, the second reflective electrode 42b_2 may not be located in the contact portion. Therefore, the anode electrodes 41a, 41b, and 41c of each sub-pixel 21, 22, and 23 can be connected to transistors 31, 32, and 33 through the first reflective conductive layer. In other words, by reducing the number of conductive layers (or electrodes) connected to the contact portions of transistors 31, 32, and 33 (by omitting the second reflective conductive layer), the step difference at the contact portion can be mitigated. This minimizes the thickness variation of the common light-emitting layer 5 at the contact portion. Furthermore, since the step difference in the contact portion is mitigated, the luminous efficiency of the organic light-emitting device OLED_2 can be improved, and color deviation can be minimized.
[0163] The references will be omitted. Figure 11 and Figure 12 Additional descriptions provided.
[0164] Figure 15 This is a cross-sectional view of a display device according to another embodiment.
[0165] according to Figure 15 The display device 1_4 according to the embodiment and the method Figure 14 The difference between the display device 1_3 and the implementation of the above method is that the second reflective electrode 42b of the second sub-pixel 22 is kept in a floating state, thus eliminating the third contact hole CT3.
[0166] In some embodiments, the second reflective electrode 42b of the second sub-pixel 22 is as follows: Figure 10 The ground is connected to the low-potential voltage line VSSL, and the third contact hole CT3 is omitted.
[0167] Other explanations are omitted because they have already been referenced above. Figure 14 They were described in detail.
[0168] Figure 16 This is a cross-sectional view of a display device according to another embodiment.
[0169] according to Figure 16 The display device 1_5 according to the embodiment and the method Figure 6 The difference in the implementation of the display device 1 is that it includes a common light-emitting layer 5_1.
[0170] More specifically, the common light-emitting layer 5_1 can be physically separated at the boundary between adjacent sub-pixels 21, 22 and 23.
[0171] For example, the common light-emitting layer 5_1 can be physically separated in the non-light-emitting regions NEA1, NEA2, and NEA3. The common light-emitting layer 5_1 can be physically separated in the non-light-emitting regions NEA1, NEA2, and NEA3 via the trench portion TRP.
[0172] For example, the common light-emitting layer 5_1 can be divided into portions placed on the side surfaces of the insulating layer 3 and the side surfaces of the embankment BK in the non-light-emitting regions NEA1, NEA2, and NEA3, and a portion placed on the upper surface of the insulating layer 3 in the trench portion TRP formed in the non-light-emitting regions NEA1, NEA2, and NEA3. The portions placed on the side surfaces of the insulating layer 3 and the side surfaces of the embankment BK in the non-light-emitting regions NEA1, NEA2, and NEA3 are physically separated from the portion placed on the upper surface of the insulating layer 3 in the trench portion TRP.
[0173] According to the display device 1_5 of this embodiment, the common light-emitting layer 5_1 can be physically separated between adjacent sub-pixels 21, 22, and 23, and in each non-light-emitting region NEA1, NEA2, and NEA3, the common light-emitting layer 5_1 can be physically separated on the same horizontal plane. This results in improved lateral leakage current LLC caused by the common light-emitting layer 5_1.
[0174] Other explanations are omitted because they have already been referenced above. Figure 6 They were described in detail.
[0175] The display device according to various embodiments of this specification can be described as follows.
[0176] A display device according to various embodiments of this specification includes: a substrate including a first sub-pixel, a second sub-pixel, and a third sub-pixel, each sub-pixel including a light-emitting region and a non-light-emitting region surrounding the light-emitting region; a first conductive layer including a first reflective electrode in the light-emitting region and the non-light-emitting region of the first sub-pixel on the substrate, and a first connecting electrode in the non-light-emitting region of the second sub-pixel and the third sub-pixel; a second conductive layer including a second reflective electrode in the light-emitting region of the second sub-pixel on the first conductive layer; a third conductive layer including a third reflective electrode in the light-emitting region and the non-light-emitting region of the third sub-pixel on the second conductive layer, and a second connecting electrode in the non-light-emitting region of the first sub-pixel and the second sub-pixel; and an anode electrode disposed on the third conductive layer in the first sub-pixel, the second sub-pixel, and the third sub-pixel, wherein in the non-light-emitting region of the first sub-pixel, the second connecting electrode is connected to the first reflective electrode; in the non-light-emitting region of the second sub-pixel, the second connecting electrode is connected to the first connecting electrode; and in the non-light-emitting region of the third sub-pixel, the third reflective electrode is connected to the first connecting electrode.
[0177] In the display device according to various embodiments of this specification, in the non-light-emitting area of the first sub-pixel, the second connecting electrode is directly connected to the first reflecting electrode, and in the non-light-emitting area of the second sub-pixel, the second connecting electrode is directly connected to the first connecting electrode.
[0178] In the display device according to various embodiments of this specification, in the non-light-emitting area of the third sub-pixel, the third reflective electrode is directly connected to the first connecting electrode.
[0179] In the display device according to various embodiments of this specification, in the non-light-emitting areas of the first sub-pixel and the second sub-pixel, the anode electrode is directly disposed on the second connecting electrode.
[0180] In the display device according to various embodiments of this specification, in the light-emitting and non-light-emitting areas of the third sub-pixel, the anode electrode is directly disposed on the third reflective electrode.
[0181] In the display device according to various embodiments of this specification, the second reflective electrode is floating.
[0182] In the display device according to various embodiments of this specification, a fixed voltage is applied to the second reflective electrode.
[0183] The display device according to various embodiments of this specification further includes a display area in which a first sub-pixel, a second sub-pixel, and a third sub-pixel are disposed, a non-display area surrounding the display area, and a low-potential voltage line disposed in the non-display area, wherein a second reflective electrode is electrically connected to the low-potential voltage line.
[0184] In the display device according to various embodiments of this specification, a first sub-pixel, a second sub-pixel, and a third sub-pixel are arranged along a first direction; each of the first sub-pixel, the second sub-pixel, and the third sub-pixel is repeatedly arranged along a second direction intersecting the first direction; adjacent second sub-pixels in the second direction share a second reflective electrode.
[0185] In the display device according to various embodiments of this specification, the second reflective electrode does not overlap with the first connecting electrode or the second connecting electrode.
[0186] In the display device according to various embodiments of this specification, in the second sub-pixel, the second reflective electrode overlaps with the first connecting electrode.
[0187] In the display device according to various embodiments of this specification, the second reflective electrode is connected to the first connecting electrode.
[0188] A display device according to various embodiments of this specification includes: a substrate including a first sub-pixel, a second sub-pixel, and a third sub-pixel, each sub-pixel including a light-emitting region and a non-light-emitting region surrounding the light-emitting region; a first conductive layer including a first reflective electrode in the light-emitting region and the non-light-emitting region of the first sub-pixel on the substrate, and a first connecting electrode in the non-light-emitting region of the second sub-pixel and the third sub-pixel; a second conductive layer including a second reflective electrode in the light-emitting region of the second sub-pixel on the first conductive layer; a third conductive layer including a third reflective electrode in the light-emitting region and the non-light-emitting region of the third sub-pixel on the second conductive layer; and an anode electrode disposed in the first sub-pixel, the second sub-pixel, and the third sub-pixel on the first conductive layer, the second conductive layer, and the third conductive layer, respectively, wherein in the non-light-emitting region of the first sub-pixel, the anode electrode is directly connected to the first reflective electrode; in the non-light-emitting region of the second sub-pixel, the anode electrode is directly connected to the first connecting electrode; and in the non-light-emitting region of the third sub-pixel, the third reflective electrode is directly connected to the first connecting electrode.
[0189] In the display device according to various embodiments of this specification, in the light-emitting and non-light-emitting areas of the third sub-pixel, the anode electrode is directly disposed on the third reflective electrode.
[0190] In the display device according to various embodiments of this specification, the second reflective electrode is floating.
[0191] In the display device according to various embodiments of this specification, a fixed voltage is applied to the second reflective electrode.
[0192] The display device according to various embodiments of this specification further includes a display area in which a first sub-pixel, a second sub-pixel, and a third sub-pixel are disposed, a non-display area surrounding the display area, and a low-potential voltage line disposed in the non-display area, wherein a second reflective electrode is electrically connected to the low-potential voltage line.
[0193] In the display device according to various embodiments of this specification, a first sub-pixel, a second sub-pixel, and a third sub-pixel are arranged along a first direction; each of the first sub-pixel, the second sub-pixel, and the third sub-pixel is repeatedly arranged along a second direction intersecting the first direction; adjacent second sub-pixels in the second direction share a second reflective electrode.
[0194] In the display device according to various embodiments of this specification, the second reflective electrode does not overlap with the first connecting electrode or the second connecting electrode.
[0195] In various embodiments of the display device according to this specification, in the second sub-pixel, the second reflective electrode overlaps with the first connecting electrode, and the second reflective electrode is connected to the first connecting electrode.
[0196] The implementation method facilitates omitting the second connecting electrode, which is located on the same layer as the second reflecting electrode, in the non-emitting regions of the first and third sub-pixels. This allows the anode electrode of the first sub-pixel to be connected to the transistor via the third connecting electrode and the first reflecting electrode, and also allows the anode electrode of the third sub-pixel to be connected to the transistor via the third connecting electrode and the first connecting electrode. The implementation method also facilitates omitting the extension of the second reflecting electrode in the non-emitting region of the second sub-pixel, thereby allowing the anode electrode of the second sub-pixel to be connected to the transistor via the third connecting electrode and the first connecting electrode. The implementation method further facilitates mitigating step differences in the contact portions by reducing the number of conductive layers (or electrodes) in the contact portions connected to the transistor. Finally, the implementation method facilitates minimizing the thickness variation of the common light-emitting layer in the contact portions due to the reduced step differences.
[0197] The implementation method is advantageous in improving the luminous efficiency of the organic light-emitting device by minimizing the thickness variation of the common light-emitting layer in the contact portion, and also in minimizing abnormal color deviations in the contact portion.
[0198] The implementation method is advantageous in increasing the area of the light-emitting region by reducing the number of contact portions connected to the transistor.
[0199] The implementation method is advantageous in stabilizing the voltage of the second reflective electrode by connecting the second reflective electrode of the second sub-pixel to a low-voltage power line or a reference voltage line.
[0200] The implementation method is advantageous in providing a display device with high color reproduction by reducing the occurrence of color deviation in non-light-emitting areas.
[0201] However, the effects achievable through this specification are not limited to those described above, and those skilled in the art can readily understand additional effects not explicitly described herein based on this disclosure.
[0202] Although embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that the described technical configurations can be implemented in other specific forms without altering the technical essence or essential features. Therefore, it should be understood that the above embodiments are exemplary and not restrictive in all respects. Furthermore, the scope of the embodiments is determined by the appended claims, not by the detailed description. Any modifications or variations derived from the meaning, scope, and equivalent concepts of the patent claims are considered to fall within the scope of the embodiments.
[0203] Explanation of reference numerals in the attached figures
[0204] 1: Display device
[0205] 2: Substrate
[0206] 3: Insulation layer
[0207] 4: First electrode
[0208] 5: Public Light-Generating Layer
[0209] 6: Cathode electrode
[0210] 7: Cap layer
[0211] 8: Encapsulation layer
[0212] 9: Color Filter Layer
[0213] BK: Embankment
Claims
1. A display device, comprising: A substrate, the substrate including a first sub-pixel, a second sub-pixel and a third sub-pixel, each sub-pixel including a light-emitting region and a non-light-emitting region surrounding the light-emitting region; A first conductive layer, the first conductive layer including a first reflective electrode in the light-emitting region and non-light-emitting region of the first sub-pixel on the substrate, and a first connecting electrode in the non-light-emitting region of the second sub-pixel and the third sub-pixel; A second conductive layer, the second conductive layer including a second reflective electrode on the first conductive layer in the light-emitting region of the second sub-pixel; The third conductive layer includes a third reflective electrode on the second conductive layer in the light-emitting and non-light-emitting regions of the third sub-pixel, and a second connecting electrode in the non-light-emitting regions of the first sub-pixel and the second sub-pixel; as well as An anode electrode is disposed on the third conductive layer in the first sub-pixel, the second sub-pixel, and the third sub-pixel. In the non-light-emitting region of the first sub-pixel, the second connecting electrode is connected to the first reflecting electrode. In the non-light-emitting region of the second sub-pixel, the second connection electrode is connected to the first connection electrode, and In the non-light-emitting region of the third sub-pixel, the third reflective electrode is connected to the first connecting electrode.
2. The display device according to claim 1, wherein, In the non-light-emitting region of the first sub-pixel, the second connecting electrode is directly connected to the first reflecting electrode, and in the non-light-emitting region of the second sub-pixel, the second connecting electrode is directly connected to the first connecting electrode.
3. The display device according to claim 1, wherein, In the non-light-emitting region of the third sub-pixel, the third reflective electrode is directly connected to the first connecting electrode.
4. The display device according to claim 1, wherein, In the non-light-emitting areas of the first sub-pixel and the second sub-pixel, the anode electrode is directly disposed on the second connecting electrode.
5. The display device according to claim 1, wherein, In the light-emitting and non-light-emitting regions of the third sub-pixel, the anode electrode is directly disposed on the third reflective electrode.
6. The display device according to claim 1, wherein, The second reflective electrode is floating.
7. The display device according to claim 1, wherein, The second reflective electrode is subjected to a fixed voltage.
8. The display device according to claim 7, further comprising: The display area includes the first sub-pixel, the second sub-pixel, and the third sub-pixel; a non-display area surrounds the display area; and a low-potential voltage line is disposed in the non-display area. The second reflective electrode is electrically connected to the low-potential voltage line.
9. The display device according to claim 8, wherein, The first sub-pixel, the second sub-pixel, and the third sub-pixel are arranged along a first direction; each of the first sub-pixel, the second sub-pixel, and the third sub-pixel is repeatedly arranged along a second direction intersecting the first direction; adjacent second sub-pixels in the second direction share the second reflective electrode.
10. The display device according to claim 1, wherein, The second reflective electrode does not overlap with either the first or the second connecting electrode.
11. The display device according to claim 1, wherein, In the second sub-pixel, the second reflective electrode overlaps with the first connecting electrode.
12. The display device according to claim 11, wherein, The second reflective electrode is connected to the first connecting electrode.
13. A display device, comprising: A substrate, the substrate including a first sub-pixel, a second sub-pixel and a third sub-pixel, each sub-pixel including a light-emitting region and a non-light-emitting region surrounding the light-emitting region; A first conductive layer, the first conductive layer including a first reflective electrode in the light-emitting region and non-light-emitting region of the first sub-pixel on the substrate, and a first connecting electrode in the non-light-emitting region of the second sub-pixel and the third sub-pixel; A second conductive layer, the second conductive layer including a second reflective electrode on the first conductive layer in the light-emitting region of the second sub-pixel; A third conductive layer, the third conductive layer including a third reflective electrode on the second conductive layer in the light-emitting region and non-light-emitting region of the third sub-pixel; as well as Anode electrodes are respectively disposed on the first conductive layer, the second conductive layer, and the third conductive layer in the first sub-pixel, the second sub-pixel, and the third sub-pixel. Specifically, in the non-light-emitting region of the first sub-pixel, the anode electrode is directly connected to the first reflective electrode; in the non-light-emitting region of the second sub-pixel, the anode electrode is directly connected to the first connecting electrode; and in the non-light-emitting region of the third sub-pixel, the third reflective electrode is directly connected to the first connecting electrode.
14. The display device according to claim 13, wherein, In the light-emitting and non-light-emitting regions of the third sub-pixel, the anode electrode is directly disposed on the third reflective electrode.
15. The display device according to claim 13, wherein, The second reflective electrode is floating.
16. The display device according to claim 13, wherein, The second reflective electrode is subjected to a fixed voltage.
17. The display device according to claim 16, further comprising: The display area includes the first sub-pixel, the second sub-pixel, and the third sub-pixel; a non-display area surrounds the display area; and a low-potential voltage line is disposed in the non-display area. The second reflective electrode is electrically connected to the low-potential voltage line.
18. The display device according to claim 17, wherein, The first sub-pixel, the second sub-pixel, and the third sub-pixel are arranged along a first direction; each of the first sub-pixel, the second sub-pixel, and the third sub-pixel is repeatedly arranged along a second direction intersecting the first direction; adjacent second sub-pixels in the second direction share the second reflective electrode.
19. The display device according to claim 13, wherein, The second reflective electrode does not overlap with the first connecting electrode.
20. The display device according to claim 13, wherein, In the second sub-pixel, the second reflective electrode overlaps with the first connecting electrode, and the second reflective electrode is connected to the first connecting electrode.
21. The display device according to claim 1 or 13, further comprising: A common light-emitting layer is disposed on the anode electrode in the first sub-pixel, the second sub-pixel, and the third sub-pixel, wherein the common light-emitting layer is physically separated at the boundary between adjacent sub-pixels.
Citation Information
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Dynamic human heavy chain antibody libraries
KR1020240110891A