Acid quenching agent, preparation method of acid quenching agent, negative photoresist composition and application of negative photoresist composition
Patent Information
- Application Number
- CN202511799328.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-02
- Publication Date
- 2026-03-06
AI Technical Summary
In existing technologies, during the photoresist lift-off process, the photoacid in the photoresist composition undergoes a dark reaction with the acid quencher, affecting the photoresist profile and photosensitivity. This presents a solution to the specific problems that existing technologies have failed to effectively address. The solution addresses the specific problems that existing technologies have failed to effectively address. The solution addresses the specific problems that existing technologies have failed to effectively address. The solution addresses the specific problems that existing technologies have failed to effectively address. The solution addresses the specific problems that existing technologies have failed to effectively address. The solution addresses the specific problems that existing technologies have failed to effectively address, employing new technical measures or methods. The steps are described in a fluent and natural language.
An acid quencher and its preparation method are provided, comprising: mixing concentrated sulfuric acid and concentrated nitric acid to obtain a mixed acid; adding benzotriazole to the mixed acid to carry out a first reaction to obtain a first reaction solution; quenching the first reaction solution in ice water to obtain 5,7-dinitrobenzotriazole; mixing 5,7-dinitrobenzotriazole, anhydrous zinc chloride and phosphorus oxychloride, and reacting under reflux to obtain a second reaction solution; quenching the second reaction solution in ice water to obtain 2-chloro-5,7-dinitrobenzotriazole; suspending sodium hydride in dry tetrahydrofuran under nitrogen protection, cooling and then adding liquid ammonia dropwise to obtain a third reaction solution; adding the tetrahydrofuran solution of 2-chloro-5,7-dinitrobenzotriazole to the third reaction solution to carry out a second reaction to obtain tris(5,7-dinitrobenzotriazole-2-yl)amine.
It achieves the suppression of acid diffusion, improves the chemical stability and solubility of photoresist, reduces pattern defects, expands the exposure energy window and depth of focus window, enhances the resist removal performance and pattern difference control of negative photoresist compositions, solves the problem of dark reaction between acid quencher and photoacid in photoresist lift-off process, and improves the photosensitivity and stability of photoresist.
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