Ceramic substrate laser powder bed fusion metal structure based on multi-layer transition layer and method of making

Abstract

This invention discloses a laser powder bed melting (LBD) metal structure based on a multi-layer transition layer on a ceramic substrate and its preparation method, belonging to the field of advanced manufacturing technology. The method includes: pretreating a ceramic substrate; subsequently preparing a multi-layer metal thin film transition layer on it, the transition layer comprising at least a first bonding layer formed by physical vapor deposition, a second conductive metal layer, and a third roughened metal anchoring layer formed by electrochemical deposition; finally, printing a three-dimensional metal structure on the transition layer using laser powder bed melting technology. The core of this invention lies in the synergistic effect of chemical bonding and mechanical interlocking, where the third roughened anchoring layer provides a strong anchoring point for the laser powder bed melting process, fundamentally solving the technical bottleneck of poor bonding and easy detachment between ceramic and metal due to thermal mismatch. This method enables highly reliable integrated manufacturing of complex, high-strength metal structures on ceramic substrates.

Description

Technical Field

[0001] This invention belongs to the field of advanced manufacturing and metal additive technology, specifically relating to a ceramic substrate laser powder bed molten metal structure based on a multi-layer transition layer and its preparation method. Background Technology

[0002] Ceramic materials, due to their excellent high-temperature stability, high hardness, good insulation, and chemical inertness, have wide applications in electronics, aerospace, and medical devices. However, the inherent functional limitation of ceramics restricts their further development in high-performance devices. Therefore, achieving reliable integration of ceramics and metals, and fabricating ceramic-metal composite structures or functional devices, has become one of the key technologies for improving system performance.

[0003] Currently, traditional methods for fabricating metal structures on ceramic substrates mainly include: screen printing metal paste; fabricating micron-thick metal circuits using physical vapor deposition methods such as magnetron sputtering and evaporation; and soldering pre-formed metal parts to the ceramic surface using active solders such as Ag-Cu-Ti. While these methods can achieve electrical connectivity, they share common limitations: ① The pattern resolution is limited by the screen aperture or mask precision, making it difficult to achieve fine circuits <50 μm; ② PVD film thickness is typically <5 μm, which is significantly reduced during laser bed fusion (LPBF) processes with thicknesses >10 μm. 6 K·s -1 When the cooling rate is high and the thermal stress is >100 MPa, the film is prone to peeling; ③ Brazing temperature (>800) o C) and the coefficient of thermal expansion of ceramics (3–9×10) -6 K -1 The mismatch leads to residual stress concentration at the interface, making it difficult to withstand the secondary thermal shock from subsequent laser melting. Therefore, traditional processes cannot simultaneously achieve direct forming and integrated manufacturing of complex and delicate structures.

[0004] As an advanced additive manufacturing technology, LPBF (Laser-Based Polymerization) technology can directly fabricate three-dimensional metal structures with complex geometries and excellent mechanical properties, providing new possibilities for directly building high-performance metal components on ceramics. However, applying LPBF technology directly to ceramic substrates faces a severe challenge: the metal powder melts and solidifies rapidly under laser irradiation, resulting in significant differences between the metal powder and the ceramic substrate due to differences in thermal expansion coefficients, crystal structures, and chemical bond types. This leads to extremely weak interfacial bonding between the molten metal and the ceramic, causing cracking, warping, and even complete detachment during the forming process. This bottleneck severely restricts the application of LPBF technology in the field of ceramic-metal heterogeneous integration.

[0005] From a materials thermodynamics perspective, the fundamental difficulty of ceramic-metal interfaces lies in the fundamental difference in the types of chemical bonds between the two: ceramics are dominated by covalent or ionic bonds, exhibiting high bond energy, directionality, and saturation; while metals are dominated by metallic bonds, exhibiting delocalization and high ductility. This bond difference leads to a discontinuous electronic structure at the interface, making it difficult to form a stable chemical bridge. Simultaneously, the high melting point and low diffusion coefficient of ceramics result in slow interfacial reaction kinetics, making it difficult to achieve sufficient metallurgical bonding even at high temperatures. Furthermore, the non-equilibrium solidification conditions generated during laser processing further inhibit interfacial reactions, rendering traditional toughening mechanisms relying on interfacial compounds ineffective. From a mechanical coupling perspective, the difference in elastic modulus between ceramics and metals is typically 2-3 orders of magnitude. During the rapid cooling of LPBF (Liquid Metal Burner), thermal stresses generated due to modulus mismatch lead to stress concentration at the interface. When local stress exceeds the fracture strength of the ceramic, cracks propagate along the interface or within the ceramic, leading to structural failure. Existing finite element simulations show that under typical LPBF process parameters, the shear stress at the interface can reach hundreds of megapascals, far exceeding the bonding strength of conventional metallization layers. From a process adaptability perspective, LPBF technology presents several contradictory requirements for the pretreatment layer: it must be thick enough to provide mechanical interlocking, but not too thick to avoid affecting laser energy coupling; it must have a certain surface roughness to enhance mechanical interlocking, while maintaining local flatness to ensure powder spreading quality; it must withstand the high temperatures of laser irradiation, but not generate gas inclusions due to overheating decomposition. These mutually restrictive requirements make it difficult to directly transfer traditional metallization processes to the LPBF field.

[0006] To improve adhesion, existing technologies typically involve metallization pretreatment on the ceramic surface, such as sputtering to form Ti / Pt / Au or Ti / Ni / Au thin films. However, these films are usually less than micrometer thick and have smooth surfaces, primarily serving electrical connections. They provide limited mechanical anchoring effects and are unable to withstand the intense thermal cycling and high thermal stress during LPBF (Limited-Body-Fuse) processes, thus failing to fundamentally solve the problem of macroscopic three-dimensional metal structure detachment.

[0007] Therefore, there is an urgent need in this field for a novel transition layer structure and preparation method that can establish a strong connection between a ceramic substrate and a three-dimensional metal structure formed by LPBF, in order to break through the current technical bottleneck and truly realize the reliable manufacturing of complex three-dimensional metal structures with high bonding strength on ceramic substrates. Summary of the Invention

[0008] Based on the defects in the aforementioned background technology, this invention aims to solve the core technical problem of poor bonding strength and easy cracking and detachment of metal structures caused by the huge differences in physical properties such as thermal mismatch when laser powder bed melting technology is applied to ceramic substrates. It provides a laser powder bed melting metal structure for ceramic substrates based on multi-layer transition layers and its preparation method. This preparation method has strong versatility and the obtained metal structure has high bonding strength, which can promote the development of ceramic-metal heterogeneous functional devices.

[0009] To achieve the above-mentioned objectives, the embodiments provide a ceramic substrate laser powder bed fusion metal structure based on a multi-layer transition layer and its preparation method, comprising the following steps: 1) Pre-treat the surface of the ceramic substrate; 2) A multilayer metal thin film transition layer is prepared on the pretreated ceramic substrate, wherein the multilayer metal thin film transition layer comprises: 2.1) First bonding layer: A thin metal film formed on a ceramic substrate by physical vapor deposition and chemically bonded to the ceramic substrate; 2.2) Second conductive metal layer: A thin metal film formed on the first bonding layer by physical vapor deposition, used to prevent interdiffusion between the first bonding layer and the third rough anchoring layer, and to provide a uniform conductive surface for subsequent electrochemical deposition; 2.3) Third rough anchoring layer: A metal thin film formed on the second conductive metal layer by electrochemical deposition and having a micro-rough structure on its surface; 3) On a ceramic substrate with the multilayer metal transition layer, metal powder is laid, and a three-dimensional metal structure is printed layer by layer using laser powder bed melting technology.

[0010] The first bonding layer forms a chemical bond with the ceramic substrate. This strong chemical bond ensures a stable interface between the ceramic and the first bonding layer, preventing cracking, warping, or even complete detachment during subsequent molding processes.

[0011] As a preferred embodiment of the present invention, the metal thin film corresponding to the first bonding layer includes a titanium film, a chromium film, a gold film, an aluminum film, a copper film, a silver film, or an indium film. Titanium and chromium are highly reactive and easily oxidized transition metals. During the deposition process, titanium or chromium atoms undergo a strong chemical reaction with oxygen on the oxide ceramic surface, forming a new, mixed chemically bonded layer at the interface, such as Ti-O-Al or Cr-O-Si bonds. This interface phase transitions gradually rather than abruptly, thus achieving strong chemical bonding.

[0012] As a preferred embodiment of the present invention, in step 2-1), when preparing the titanium thin film by physical vapor deposition, the process parameters are: vacuuming to 5 × 10⁻⁶. -5Pa, at an operating current of 50 mA, at 3-8 nm·min -1 The deposition rate is such that the thickness of the first bonding layer is 10 nm to 200 nm. This first bonding layer not only needs to be strongly anchored to the ceramic surface through chemical bonds to form a stable ceramic-metal interface, but also needs to provide a uniform and dense deposition platform for the subsequent second conductive metal layer. Therefore, its thickness should not be too thin or too thick: if it is too thin, the coverage continuity decreases, the exposed area of ​​the ceramic surface increases, and there are insufficient chemical anchoring points, resulting in a decrease in interfacial bonding strength, making the subsequent conductive layer prone to pore formation or local delamination; if it is too thick, the internal stress increases significantly, the grains coarsen, and the defect density increases, which weakens the interfacial toughness and may induce microcracks during thermal cycling, ultimately leading to delamination failure of the ceramic-metal interface. Furthermore, the thickness of the titanium thin film is preferably 50 nm to 100 nm.

[0013] The second conductive metal layer is a high-conductivity metal. The main function of this layer is to construct a continuous, low-resistance conductive network on the ceramic-metal transition interface, providing a uniform and stable current distribution for the subsequent DC or pulse electrodeposition of the third rough anchoring layer, thereby suppressing edge enrichment and local scorching, ensuring that the anchoring layer nucleates and grows densely throughout the entire region, and ultimately obtaining a three-dimensional interlocking structure with uniform thickness and high bonding strength.

[0014] As a preferred embodiment of the present invention, in step 2-2), when preparing the second conductive metal layer by physical vapor deposition, the process parameters are: vacuuming to 5×10⁻⁶. -5 Pa, at an operating current of 60 mA, at 5-15 nm·min -1 The deposition rate is such that the thickness of the second conductive metal layer is 50 nm to 500 nm. If the thickness is too thin, the grain size within the layer is limited, grain boundary scattering is significant, the effective conductivity decreases, and element diffusion between the first bonding layer and the third roughening anchoring layer cannot be effectively suppressed. If the thickness is too thick, the tensile stress within the film accumulates linearly with the thickness, the difference in thermal expansion coefficients between ceramic and metal is amplified, and the shear stress concentrates at the top of the first bonding layer during thermal cycling, inducing interfacial microcracks. At the same time, the thick film grains coarsen and the surface roughness increases, which in turn reduces the nucleation density of the third anchoring layer and weakens the mechanical interlocking effect. Further, the thickness of the second conductive metal layer is preferably 100 nm to 200 nm, and the preferred surface arithmetic mean roughness Ra value is 20-50 nm.

[0015] The third rough anchoring layer is a metal that is easily electrochemically deposited and possesses good mechanical strength and weldability. The ease of electrochemical deposition of the metal reduces the requirements for the preparation conditions of the third rough anchoring layer. The good mechanical strength and weldability not only provide a more stable printing platform for subsequent metal printing but also enable higher weld strength with the subsequently printed metal.

[0016] As a preferred embodiment of the present invention, in step 2-3), when preparing the third rough anchoring layer by electrochemical deposition, an electrolyte such as sulfate or sulfonate of the corresponding metal is used, at a current density of 2-3 A·dm³. -2 Under conditions of liquid temperature of 30-70℃, deposition is carried out for 75-105 minutes to form an electrolytic copper thin film layer with a thickness of approximately 20-40 μm, wherein the thickness of the third rough anchoring layer is 10 μm to 100 μm. Further, the thickness of the third rough anchoring layer is preferably 20 μm to 50 μm.

[0017] As a preferred embodiment of the invention, the surface of the third rough anchoring layer has a micro-rough structure with an arithmetic mean surface roughness Ra value of 0.5 μm to 5 μm. This rough surface is used to provide a strong mechanical engagement anchoring point.

[0018] In a preferred embodiment of the present invention, the second conductive metal layer and the third roughening anchor layer are made of the same metal material, preferably copper. The thickness of the second conductive metal layer is on the order of hundreds of nanometers, and the roughness is on the order of nanometers. The nanometer-level roughness can effectively reduce the distribution difference of current density during subsequent electrodeposition, avoiding uneven electrodeposition of the metal in the third roughening anchor layer. The thickness of the third roughening anchor layer is on the order of micrometers, and the roughness is from the submicrometer to the micrometer level. The micrometer-level thickness and submicrometer to micrometer-level roughness of the third roughening anchor layer can provide good mechanical strength and mechanical interlocking strength for subsequent laser bed fusion technology printing of three-dimensional metal structures.

[0019] In another preferred embodiment of the present invention, the second conductive metal layer and the third rough anchoring layer are made of different metallic materials. The second conductive metal layer is preferably a highly conductive metal, including copper, gold, or silver; the third rough anchoring layer is preferably a metal with good mechanical strength and weldability, including copper, nickel, or alloys thereof.

[0020] As a preferred embodiment of the present invention, the ceramic substrate is alumina, aluminum nitride, or zirconium oxide ceramic.

[0021] As a preferred embodiment of the present invention, in step 3), the metal powder is pure copper powder, copper alloy powder, stainless steel powder, or nickel-based high-temperature alloy powder. During printing, the laser beam not only melts the metal powder, but also causes the surfaces of the first layer and the third rough anchoring layer of the printed three-dimensional metal structure to melt together, forming a strong metallurgical bond and mechanical interlock.

[0022] To achieve the above-mentioned objectives, this invention also provides a ceramic-metal composite structure, which is prepared by the above-described method.

[0023] Compared with the prior art, the technical solution provided by the present invention has the following significant advantages: 1) Pioneering multi-layer synergistic effect: The transition structure of the first bonding layer + second conductive metal layer + third rough anchoring layer constructed by this invention achieves a smooth transition of force and heat between ceramic and LPBF metal through the synergy of chemical bonding and macro-mechanical interlocking, and completely solves the problem of detachment under high stress environment.

[0024] 2) Great flexibility in material selection: This invention breaks through the limitation of a single material. The second conductive metal layer and the third rough anchoring layer can be independently selected from the same or different metal materials according to specific application requirements (such as conductivity, cost, corrosion resistance, and weldability). For example, an all-copper system can be selected to obtain the best electrical and thermal conductivity, or a "silver + nickel" combination can be selected to balance high conductivity with surface hardness and wear resistance, greatly expanding the application scenarios of this invention.

[0025] 3) Process versatility and robustness: This invention exhibits good versatility across different metal material systems. The combination of mature physical vapor deposition and electrochemical deposition processes ensures the uniformity and reliability of the transition layer quality, providing a stable and consistent substrate for subsequent LPBF processes, and significantly improving the success rate and yield of complex structure forming. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a flowchart of the method for preparing a ceramic substrate laser powder bed molten metal structure based on a multi-layer transition layer, as provided in the embodiments; Figure 2 The images show a physical photograph and an optical microscope image of the thick-film copper wire prepared on the alumina ceramic substrate in Example 1 of this invention. Wherein, 1-ceramic substrate; 2-first bonding layer; 3-second conductive metal layer; 4-third rough anchoring layer; 5-three-dimensional metal structure; ①-ceramic substrate pretreatment and physical vapor deposition; ②-physical vapor deposition; ③-electrochemical deposition; ④-laser powder bed melting. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the scope of protection of this invention.

[0029] Figure 1 This is a flowchart of a method for preparing a ceramic substrate laser powder bed molten metal structure based on a multi-layer transition layer, as provided in the embodiments, including the following steps: 1) Pre-treatment of the surface of ceramic substrate 1 ①; 2) A multilayer metal thin film transition layer is prepared on the pretreated ceramic substrate, wherein the multilayer metal thin film transition layer comprises: 2.1) First bonding layer 2: A metal thin film formed on a ceramic substrate by physical vapor deposition ① and chemically bonded to the ceramic substrate; 2.2) Second conductive metal layer 3: A metal thin film formed on the first bonding layer by physical vapor deposition ②, used to prevent mutual diffusion between the first bonding layer 2 and the third rough anchoring layer 4, and to provide a uniform conductive surface for subsequent electrochemical deposition ③. 2.3) Third rough anchoring layer 4: A metal thin film formed on the second conductive metal layer by electrochemical deposition ③ and having a micro-rough structure on its surface; 3) On a ceramic substrate with the multi-layer metal transition layer, metal powder is laid, and a three-dimensional metal structure is printed layer by layer using laser powder bed melting technology ④.

[0030] according to Figure 1 The three-dimensional metal structures described in Examples 1 and 2 below were prepared using the process shown.

[0031] Example 1: Fabrication of high-bonding-strength copper wires on alumina ceramics This embodiment demonstrates how to fabricate robust, thick-film copper wires for electronic packaging on a small alumina ceramic substrate using the method of the present invention, specifically including the following steps: 1) Ceramic substrate pretreatment A 96% alumina ceramic substrate 1 with dimensions of 25 mm × 25 mm × 0.635 mm was selected; it was ultrasonically cleaned in acetone and anhydrous ethanol for 15 minutes each, and dried with nitrogen; it was then placed in a plasma cleaner for surface activation treatment for 3 minutes.

[0032] 2) Fabrication of multilayer metal thin film transition layer 2.1) Preparation of the first bonding layer: The pretreated ceramic substrate is placed in an ion sputtering coating machine. A vacuum of 5 × 10⁻⁶ is applied. -5 Pa, at an operating current of 50 mA, at 5 nm·min -1 A dense titanium film with a thickness of approximately 50 nm was deposited at a high deposition rate as the first bonding layer. 2.2) Preparation of the second conductive metal layer: Under the same vacuum and pressure environment, a copper thin film with a thickness of about 100 nm was sputtered and deposited as the second conductive metal layer; 2.3) Preparation of the third rough anchoring layer: The substrate was used as the cathode and connected to the electrochemical deposition system. An acidic copper sulfate electrolyte was used at a current density of 2.5 A·dm³. -2 Under the condition of liquid temperature of 50℃, a thin electrolytic copper film layer with a thickness of about 35 μm was formed after 90 minutes of deposition.

[0033] 3) Laser powder bed melting molding The aluminum-ceramic substrate with the prepared transition layer was fixed in the forming cavity of the LPBF equipment with the ceramic layer at the bottom and the electrolytic copper layer at the top. A 30 μm thick layer of high-purity spherical copper powder with a particle size of 0-20 μm was uniformly spread on the surface of the electrolytic copper layer. In a protective atmosphere filled with high-purity argon, a continuous-wave fiber laser (laser wavelength: 515 nm) was used with a laser power of 225 W and a scanning speed of 1000 mm·s. -1 The spot diameter is 50 μm; scanning is performed according to the preset wire path, and printing is performed layer by layer to finally form a raised copper wire structure with a width of about 400 μm and a thickness of about 200 μm.

[0034] Example 2: Preparation of a gold-nickel composite transition layer and metal connecting pillars on aluminum nitride ceramics This embodiment demonstrates the use of different metal materials to prepare a transition layer that balances high conductivity and surface abrasion resistance, suitable for high-performance RF connectors. The specific steps include: 1) Ceramic substrate pretreatment An aluminum nitride ceramic substrate was selected, and the cleaning and activation steps were the same as in Example 1.

[0035] 2) Fabrication of multilayer metal transition layers 2.1) Preparation of the first bonding layer: The pretreated ceramic substrate is placed in an ion sputtering coating machine. A vacuum of 5 × 10⁻⁶ is applied. -5 Pa, at an operating current of 60 mA, at 10 nm·min -1 The deposition rate was such that a dense metallic chromium film with a thickness of approximately 100 nm was deposited as the first bonding layer. 2.2) Preparation of the second conductive metal layer: Under the same vacuum and pressure environment, a 200 nm thick gold film was sputtered as the second conductive metal layer. Gold has excellent conductivity and oxidation resistance. 2.3) Preparation of the third rough anchoring layer: An aluminum ceramic substrate with sequentially deposited chromium and gold films was used as the cathode and connected to an electrochemical deposition system. Nickel sulfamate electrolyte was used, and the current density was 4 A·dm³. -2Electroplating at 50°C for 10 minutes forms a rough nickel layer with a thickness of approximately 20 μm. The nickel layer has high hardness and good wear resistance, and its rough surface provides excellent anchoring performance.

[0036] 3) Laser powder bed melting molding The aluminum-ceramic substrate with the prepared transition layer was fixed in the forming cavity of the LPBF equipment with the ceramic layer at the bottom and the electrolytic nickel layer on top. A 50 μm thick layer of 316L stainless steel powder with a particle size of 0-30 μm was uniformly deposited on the surface of the electrolytic copper layer. In a protective atmosphere filled with high-purity argon, a continuous-wave fiber laser with a wavelength of 515 nm was used to scan along a preset guide path. The laser power was set to 250 W, and the scanning speed was 700 mm / s. -1 The laser spot diameter is 50 μm. It is printed layer by layer to finally form a raised metal connecting column with a width of about 2 mm and a thickness of about 4 mm.

[0037] The specific embodiments described above illustrate the technical solution and beneficial effects of the present invention in detail. It should be understood that the above description is only the most preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, additions, and equivalent substitutions made within the scope of the principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for preparing a ceramic substrate laser powder bed fusion metal structure based on a multi-layer transition layer, characterized in that, Includes the following steps: 1) Pre-treat the surface of the ceramic substrate; 2) A multilayer metal thin film transition layer is prepared on a pretreated ceramic substrate. This multilayer metal thin film transition layer exhibits a synergistic effect of chemical bonding and macroscopic mechanical interlocking, including: 2.1) First bonding layer: A thin metal film formed on a ceramic substrate by physical vapor deposition and chemically bonded to the ceramic substrate; 2.2) Second conductive metal layer: A metal thin film formed on the first bonding layer by physical vapor deposition. The second conductive metal layer is a high-conductivity metal. Its function is to build a continuous, low-resistance conductive network on the ceramic-metal transition interface, provide a uniform and stable current distribution for the subsequent DC or pulse electrodeposition of the third rough anchoring layer, suppress edge enrichment and local scorching, ensure that the third rough anchoring layer nucleates and grows densely throughout the entire area, and finally obtain a three-dimensional interlocking structure with uniform thickness and high bonding strength. 2.3) Third rough anchoring layer: A metal thin film with a micro-rough structure formed on the second conductive metal layer by electrochemical deposition. The thickness of the third rough anchoring layer is 50 μm to 100 μm, and the surface arithmetic mean roughness Ra value of the third rough anchoring layer is 0.5 μm to 5 μm, which provides good mechanical strength and mechanical interlocking strength for subsequent laser powder bed melting technology to print three-dimensional metal structures. 3) On a ceramic substrate with the multilayer metal thin film transition layer, metal powder is laid, and a three-dimensional metal structure is printed layer by layer using laser powder bed melting technology. During printing, the laser beam not only melts the metal powder, but also melts the surfaces of the first layer and the third rough anchoring layer of the printed three-dimensional metal structure together to form a strong metallurgical bond and mechanical interlock, preventing the three-dimensional metal structure from falling off.

2. The method for preparing a ceramic substrate laser powder bed fusion metal structure based on a multi-layer transition layer according to claim 1, characterized in that, The thickness of the first bonding layer is 10 nm to 200 nm.

3. The method for preparing a ceramic substrate laser powder bed fusion metal structure based on a multi-layer transition layer according to claim 1, characterized in that, The metal thin film corresponding to the first bonding layer includes titanium film, chromium film, gold film, aluminum film, copper film, silver film, or indium film.

4. The method for preparing a ceramic substrate laser powder bed fusion metal structure based on a multi-layer transition layer according to claim 1, characterized in that, The thickness of the second conductive metal layer is 50 nm to 500 nm.

5. The method for preparing a ceramic substrate laser powder bed fusion metal structure based on a multi-layer transition layer according to claim 1, characterized in that, When the second conductive metal layer and the third rough anchoring layer are made of the same metal material, the roughness of the second conductive metal layer is at the nanometer level, and the roughness of the third rough anchoring layer is at the submicrometer to micrometer level.

6. The method for preparing a ceramic substrate laser powder bed fusion metal structure based on a multi-layer transition layer according to claim 1, characterized in that, The second conductive metal layer and the third rough anchoring layer are made of different metal materials, wherein the second conductive metal layer includes a copper layer, a gold layer or a silver layer, and the third rough anchoring layer is a copper layer, a nickel layer or an alloy layer thereof.

7. A ceramic-metal composite structure, characterized in that, The composite structure is prepared by the preparation method according to any one of claims 1-6.

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