Avalanche photodetector and method of manufacturing the same

CN121619970BActive Publication Date: 2026-06-09HANGZHOU INST FOR ADVANCED STUDY UCAS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HANGZHOU INST FOR ADVANCED STUDY UCAS
Filing Date
2026-01-29
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Existing silicon SPAD detectors have limited control methods for the central avalanche region pn junction, poor voltage withstand capability, and limited depletion region width, which restricts the improvement of detection efficiency. At the same time, increasing the pn junction width will bring excessive noise and degrade device performance.

Method used

A high-energy ion implantation machine is used to form a multi-peak doping curve design by alternating the implantation energy and dose, forming periodically spaced n-type and p-type doped regions. Combined with back-side etched channels and surface passivation layers, the avalanche region structure is optimized.

Benefits of technology

While ensuring process compatibility, low noise and high detection efficiency were achieved, the detector's withstand voltage and depletion region width were improved, excess noise was reduced, and the signal-to-noise ratio performance was enhanced.

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Abstract

The present application relates to the technical field of semiconductor, and provide an avalanche photodetector and a preparation method thereof, the detector comprises a substrate, an epitaxial layer, a peripheral p-type injection well, an active region p-type injection well, an active region n-type injection well and a surface n-type injection region. The epitaxial layer is formed on the substrate, the peripheral p-type injection well is formed on the first region and the second region of the epitaxial layer; the active region p-type injection well is formed on the third region of the epitaxial layer; the active region n-type injection well is formed on the active region p-type injection well, and the surface n-type injection region is formed on the active region n-type injection well. The active region p-type injection well and the active region n-type injection well are longitudinally formed with a plurality of periodic central avalanche regions by using an alternating ion implantation method with different energy and dose, so that the preparation process is compatible, the detection efficiency of the SPAD is effectively improved, and the excess noise is not additionally increased.
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Citation Information

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