Method for measuring light transmittance of glass substrate / piezoelectric thin film composite structure

Abstract

The application provides a method for measuring the light transmittance of a glass substrate / piezoelectric film composite structure, comprising: obtaining diffraction peak intensity and diffraction peak half-peak width of each crystal plane orientation of the piezoelectric film of the composite structure under the same test condition; obtaining the proportion of each crystal plane orientation according to the diffraction peak intensity and the diffraction peak half-peak width, which comprises: obtaining the product of the diffraction peak intensity and the diffraction peak half-peak width of the crystal plane orientation whose proportion is needed to be obtained, and dividing the sum of the products of the diffraction peak intensity and the diffraction peak half-peak width of each crystal plane orientation; obtaining the actual light transmittance of each crystal plane orientation according to the proportion of each crystal plane orientation and the intrinsic light transmittance of each crystal plane orientation; obtaining the sum of the actual light transmittance of each crystal plane orientation, and taking it as the light transmittance of the piezoelectric film of the composite structure; obtaining the product of the light transmittance of the glass substrate of the composite structure and the light transmittance of the piezoelectric film, and taking it as the light transmittance of the composite structure. The application can realize high-precision, low-cost and efficient measurement.

Description

Technical Field

[0001] This invention relates to the field of measurement, and more particularly to a method for determining the light transmittance of a glass substrate / piezoelectric thin film composite structure. Background Technology

[0002] Lead zirconate titanate (PZT) piezoelectric films exhibit significant application potential in the field of piezoelectric microelectromechanical systems (MEMS) due to their excellent piezoelectric response characteristics. As a typical perovskite ceramic material, PZT piezoelectric films, with their high electromechanical coupling coefficient, good dielectric properties, and stable temperature characteristics, have become an ideal material for constructing miniaturized piezoelectric devices. In fingerprint recognition technology, PZT piezoelectric films can achieve high-resolution fingerprint pattern acquisition by sensing the charge signal generated by pressure deformation; in the field of ultrasonic imaging, miniature transducer arrays based on PZT piezoelectric films can emit and receive ultrasonic waves, aiding in the precise detection of medical images; and in distance sensing applications, its piezoelectric effect can convert mechanical vibrations into electrical signals, enabling precise measurement of micrometer-level displacement. In recent years, with the development of MEMS technology towards integration and low power consumption, research on PZT piezoelectric films in fields such as micro energy harvesters, microsensors, and microactuators has continued to heat up. Although its thin film fabrication process (such as crystal quality control and substrate compatibility optimization) still faces challenges, its application prospects in the field of intelligent sensing and microsystems have become one of the core directions of current MEMS technology research.

[0003] In particular, PZT piezoelectric films, with their synergistic advantages of "transmittance (transmittance in the visible light band can reach more than 80%), piezoelectricity (d33 can reach 300~500pC / N) and integration (compatible with semiconductor etching, photolithography and other processes)," demonstrate unique value in fields such as high-sensitivity transparent touch and flexible pressure sensing. They are especially suitable for scenarios with high requirements for transmittance, response speed and environmental adaptability (such as smart glass, foldable touch screens, medical touch panels, etc.), providing key material support for the next generation of transparent human-computer interaction technology.

[0004] Glass substrates (such as quartz glass and borosilicate glass) can achieve a transmittance of over 90% in the visible light band (400~700 nm) and have low spectral absorption. This synergistic effect with the transparency of PZT piezoelectric films (optimized transmittance > 80%) meets the stringent transmittance requirements of transparent touchscreens (such as mobile phone and tablet touch panels that need to ensure clear display images). In contrast, while flexible plastic substrates (such as PET) have high transmittance, they are prone to yellowing or softening at high temperatures, affecting long-term optical stability. Therefore, glass is typically chosen as the substrate for fabricating PZT piezoelectric films.

[0005] Light transmittance is a key indicator in the field of transparent touch sensing. In scenarios such as automotive head-up displays (HUDs), the touch layer (e.g., PZT piezoelectric film) needs to be integrated with a transparent substrate (e.g., glass). Insufficient light transmittance can lead to blurred views outside the window or overlapping and distorted displayed information. Therefore, automotive touch glass requires a light transmittance of >88% to avoid affecting the driver's vision. Thus, accurate measurement of light transmittance is crucial.

[0006] The principle behind commonly used transmittance testing is to characterize the material's transmittance by measuring the change in light intensity before and after the light passes through the sample. This is the ratio of transmitted light intensity (I) to incident light intensity (I0), usually expressed as a percentage: T = I / Io × 100%. The commonly used equipment is an ultraviolet-visible-near-infrared spectrophotometer equipped with an integrating sphere module.

[0007] Spectrophotometer testing of the transmittance of glass / PZT piezoelectric thin films can accurately characterize the optical properties of materials and is compatible with samples of different thicknesses (0.5~5μm) and substrate types. It can also achieve non-destructive scanning of the full spectrum (300~1100nm). However, it has the following core defects: (1) Interference error: Since the thickness of PZT piezoelectric thin films is similar to the wavelength of visible light, it will cause multi-beam interference, resulting in periodic oscillation of the transmission spectrum, which leads to a transmittance drift of more than 10%; (2) Birefringence effect in PZT piezoelectric thin films: For PZT piezoelectric thin films deposited on glass substrates, birefringence mainly has two sources: one is the orientation of ferroelectric domains in PZT piezoelectric thin films, which forms Δn ≈ 10 inside the film. -3 ~10 -4 The first is the birefringence intensity; the second is that residual stress will form inside the PZT piezoelectric film during the cooling process, resulting in Δn ≈ 5×10 -6 The birefringence intensity is about 5-10%. The above birefringence effect will cause a transmittance test error of about 5-10%, thus affecting the decision-making and judgment of actual industrial production. (3) High test cost: The interference error and birefringence effect mentioned above can be reduced by adding an integrating sphere, polarization controller module and terahertz imaging module to the spectrophotometer, but this will significantly increase the test cost. In addition, in order to ensure test accuracy and reliability, the core material coating BaSO4 coating in the integrating sphere needs to be maintained and inspected regularly.

[0008] Therefore, providing a high-precision, low-cost, and efficient method for determining the transmittance of glass substrate / piezoelectric thin film composite structures has become one of the current research focuses. Summary of the Invention

[0009] The technical problem to be solved by the present invention is to provide a method for measuring the transmittance of a glass substrate / piezoelectric thin film composite structure, which can achieve high precision, low cost and high efficiency measurement.

[0010] To address the aforementioned problems, this invention provides a method for determining the transmittance of a glass substrate / piezoelectric thin film composite structure, comprising: obtaining, under the same test conditions, the diffraction peak intensity and half-width at half-maximum (WHM) of each crystal plane orientation of the piezoelectric thin film in the composite structure; obtaining the proportion of each crystal plane orientation based on the diffraction peak intensity and the WHM of the diffraction peak, wherein the method for obtaining the proportion of each crystal plane orientation includes: dividing the product of the diffraction peak intensity and the WHM of the diffraction peak for each crystal plane orientation by the sum of the products of the diffraction peak intensity and the WHM of the diffraction peak for each crystal plane orientation; obtaining the actual transmittance of each crystal plane orientation based on the proportion of each crystal plane orientation and the intrinsic transmittance of each crystal plane orientation; obtaining the sum of the actual transmittances of each crystal plane orientation and using it as the transmittance of the piezoelectric thin film in the composite structure; and obtaining the product of the transmittance of the glass substrate and the transmittance of the piezoelectric thin film in the composite structure and using it as the transmittance of the composite structure.

[0011] In one specific embodiment, under the same test conditions, the method for obtaining the diffraction peak intensity and half-width at half-maximum (WHM) of each crystal plane orientation of the piezoelectric thin film in the composite structure includes: using X-ray diffraction analysis to obtain the diffraction peak intensity and WHM of each crystal plane orientation of the piezoelectric thin film in the composite structure under the same test conditions.

[0012] In one specific embodiment, the step of obtaining the proportion of each crystal plane orientation based on the diffraction peak intensity and the half-width at half maximum of the diffraction peak further includes: merging equivalent crystal plane orientations and calculating their proportions.

[0013] In one specific embodiment, the piezoelectric film is a lead zirconate titanate piezoelectric film, and the crystal orientation of the lead zirconate titanate piezoelectric film includes (100), (110), (111), and (211). Under the same test conditions, the step of obtaining the diffraction peak intensity and the half-width at half-maximum (WHM) of the diffraction peaks of each crystal orientation of the piezoelectric film in the composite structure further includes: under the same test conditions, obtaining the diffraction peak intensity and the WHM of the diffraction peaks of the lead zirconate titanate piezoelectric film (100), (110), (111), and (211) in the composite structure.

[0014] In one specific embodiment, the step of obtaining the proportion of each crystal plane orientation based on the diffraction peak intensity and the half-width of the diffraction peak further includes: merging the crystal plane orientations equivalent to (100) with (100) for a unified proportion calculation, merging the crystal plane orientations equivalent to (110) with (110) for a unified proportion calculation, merging the crystal plane orientations equivalent to (111) with (111) for a unified proportion calculation, and merging the crystal plane orientations equivalent to (211) with (211) for a unified proportion calculation.

[0015] In one specific embodiment, the intrinsic transmittance is the transmittance of the piezoelectric thin film material when it has a single crystal plane orientation.

[0016] In one specific embodiment, the step of obtaining the actual transmittance of each crystal facet orientation based on the proportion of each crystal facet orientation and the intrinsic transmittance of each crystal facet orientation further includes: the product of the proportion of the crystal facet orientation and the intrinsic transmittance of the crystal facet orientation is used as the actual transmittance of the crystal facet orientation.

[0017] In one specific embodiment, the glass substrate includes a glass substrate and a transparent electrode disposed on the glass substrate, and the piezoelectric thin film is disposed on the transparent electrode. The step of obtaining the product of the light transmittance of the glass substrate of the composite structure and the light transmittance of the piezoelectric thin film further includes: obtaining the product of the light transmittance of the glass substrate of the composite structure, the light transmittance of the transparent electrode and the light transmittance of the piezoelectric thin film.

[0018] In one specific embodiment, the transmittance of the glass substrate is the intrinsic transmittance of the glass substrate, and the transmittance of the transparent electrode is the intrinsic transmittance of the transparent electrode.

[0019] The method for determining the transmittance of a glass substrate / piezoelectric thin film composite structure provided by this invention achieves high precision, low cost, and high efficiency. This method eliminates the need for an integrating sphere and a spectrophotometer with terahertz imaging correction, reducing testing costs and improving efficiency. Furthermore, it eliminates the need for sample cutting or etching, making it completely non-destructive; the tested sample can then be used for subsequent device fabrication. Simultaneously, it boasts high testing efficiency, allowing for the detection of transmittance at multiple points within the sample plane, thus enabling the assessment of the in-plane uniformity of material transmittance. The actual transmittance obtained through non-destructive testing by this invention has an error within 3% compared to results obtained using high-precision Agilent Cary 7000 and PerkinElmer Lambda 1050+ spectrophotometers, fully meeting practical requirements. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the steps of a method for measuring the light transmittance of a glass substrate / piezoelectric thin film composite structure according to a specific embodiment of the present invention; Figure 2 This is a schematic diagram of measuring the glass substrate / piezoelectric thin film composite structure according to a specific embodiment of the present invention; Figure 3 This is the XRD pattern of the PZT thin film wafer in Embodiment 1 of the present invention; Figure 4 This is the XRD pattern of the PZT thin film wafer in Embodiment 2 of the present invention; Figure 5 This is the XRD pattern of the PZT thin film wafer in Embodiment 3 of the present invention; Figure 6 This is the XRD pattern of the PZT thin film wafer in Embodiment 4 of the present invention. Detailed Implementation

[0022] In a specific embodiment of the present invention, a lead zirconate titanate (PZT) piezoelectric film is used as an example for illustration. It is understood that other piezoelectric films with similar characteristics to the lead zirconate titanate piezoelectric film can also have their transmittance measured using the method of the present invention.

[0023] For lead zirconate titanate piezoelectric films, the main crystal orientations include (100), (110), (111), and (211) of the perovskite phase. Through in-depth research, the inventors discovered that lead zirconate titanate materials with a single crystal orientation have a fixed intrinsic transmittance, and the intrinsic transmittance differs between different crystal orientations. The contributions of each crystal orientation within a polycrystalline lead zirconate titanate piezoelectric film to the actual transmittance are independent and do not affect each other. Furthermore, the contribution of each crystal orientation to the actual transmittance within a polycrystalline lead zirconate titanate piezoelectric film is directly proportional to its proportion.

[0024] Based on the above research, the present invention provides a method for determining the transmittance of a glass substrate / piezoelectric thin film composite structure. This method obtains the proportion of each crystal plane orientation of the piezoelectric thin film, and obtains the actual transmittance of each crystal plane orientation based on the proportion and the intrinsic transmittance of each crystal plane orientation. The sum of the actual transmittances of each crystal plane orientation is taken as the actual transmittance of the piezoelectric thin film. The product of the transmittance of the glass substrate and the transmittance of the piezoelectric thin film is then taken as the transmittance of the composite structure.

[0025] This invention provides a method for determining the transmittance of glass substrate / piezoelectric thin film composite structures that eliminates the need for integrating spheres and terahertz imaging correction in spectrophotometers, reducing testing costs and improving efficiency. Furthermore, it eliminates the need for sample cutting or etching, making it completely non-destructive; the tested samples can then be used for subsequent device fabrication. Simultaneously, it offers high testing efficiency, allowing for the detection of transmittance at multiple points within the sample plane, thus enabling the assessment of the in-plane uniformity of material transmittance. The actual transmittance obtained through non-destructive testing using this invention has an error within 3% compared to results obtained using high-precision Agilent Cary 7000 and PerkinElmer Lambda 1050+ spectrophotometers, fully meeting practical requirements.

[0026] The specific implementation of the method for measuring the light transmittance of a glass substrate / piezoelectric thin film composite structure provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0027] Figure 1 This is a schematic diagram illustrating the steps of a method for measuring the transmittance of a glass substrate / piezoelectric thin film composite structure according to a specific embodiment of the present invention. Please refer to [link / reference]. Figure 1 The method includes: Step S10: Under the same test conditions, obtain the diffraction peak intensities and full width at half maximum (FWHM) of the piezoelectric thin film of the composite structure for each crystal plane orientation. For this specific embodiment, please refer to... Figure 2 This is a schematic diagram of a glass substrate / piezoelectric thin film composite structure provided by a specific embodiment of the present invention. The glass substrate includes a glass substrate 100 and a transparent electrode 200 disposed on the glass substrate 100, and the piezoelectric thin film 300 is disposed on the transparent electrode 200. The glass substrate 100 is quartz glass or borosilicate glass, the transparent electrode 200 is a lanthanum nickelate (LNO) electrode, and the chemical formula of the piezoelectric thin film 300 is: Pb(Zr) 0.52 Ti 0.48 O3.

[0028] In this step, the testing conditions for each crystal plane orientation of the piezoelectric thin film are the same to ensure the accuracy and reliability of subsequent data comparison and analysis calculations, and to improve the accuracy of the actual transmittance of the composite structure. For example, the diffraction peak intensity and half-width at half-maximum of the diffraction peaks for each crystal plane orientation of the same sample piezoelectric thin film are obtained, and the test parameters of the testing equipment and the ambient atmosphere are kept consistent.

[0029] Furthermore, in one specific embodiment, under the same test conditions, the method for obtaining the diffraction peak intensity and half-width at half-maximum (WHM) of the piezoelectric thin film for each crystal plane orientation in the composite structure includes: using X-ray diffraction analysis to obtain the diffraction peak intensity and WHM of the piezoelectric thin film for each crystal plane orientation in the composite structure under the same test conditions. X-ray diffraction analysis is a non-contact, non-destructive measurement method. It does not require cutting or etching the sample, is completely non-destructive, and the tested sample can be used for subsequent device fabrication, effectively achieving low-cost detection.

[0030] As an example, for lead zirconate titanate piezoelectric films, their crystal orientations mainly include (100), (110), (111), and (211). Under the same test conditions, the step of obtaining the diffraction peak intensity and half-maximum width of the diffraction peak for each crystal orientation of the piezoelectric film in the composite structure further includes: under the same test conditions, obtaining the diffraction peak intensity and half-maximum width of the diffraction peak for (100), (110), (111), and (211) of the lead zirconate titanate piezoelectric film in the composite structure. Specifically, for the same sample, under the same test conditions, the diffraction peak intensity of the (100) crystal orientation is obtained by X-ray diffraction analysis. P （100） and the half-width at half-maximum (WHM) of the diffraction peaks f （100） (110) Diffraction peak intensity of crystal plane orientation P （110） and the half-width at half-maximum (WHM) of the diffraction peaks f （110） (111) Diffraction peak intensity of crystal plane orientation P （111） and the half-width at half-maximum (WHM) of the diffraction peaks f （111） , and the diffraction peak intensity of the (211) crystal plane orientation P （211） and the half-width at half-maximum (WHM) of the diffraction peaks f （211） .

[0031] Furthermore, for piezoelectric thin films, some crystal orientations are equivalent, meaning their impact on transmittance is equivalent. To further simplify the calculation, in one specific embodiment, equivalent crystal orientations are merged and uniformly calculated for proportion. While ensuring calculation accuracy, the complexity of polycrystalline orientation analysis is reduced through equivalence. For example, the crystal orientations of lead zirconate titanate piezoelectric thin films mainly include the four common perovskite phase orientations (100), (110), (111), and (211). They also include other crystal orientations equivalent to these four orientations, which are then merged with these four orientations for uniform proportion calculation. For example, (200) is equivalent to (100), and (010) and (001) are equivalent to (100). Therefore, (200), (010), and (001) are merged with (100) to obtain the merged diffraction peak intensity and the full width at half maximum (FWHM) of the diffraction peak. For example, (011), (101) and (110) are equivalent. Then, by merging (011), (101) and (110), we can obtain the combined diffraction peak intensity and the half-width of the diffraction peak.

[0032] Step S11: Obtain the proportion of each crystal plane orientation based on the diffraction peak intensity and the half-width at half-maximum (WHM) of the diffraction peak. The method for obtaining the proportion of each crystal plane orientation includes: dividing the product of the diffraction peak intensity and the WHM of the diffraction peak of the crystal plane orientation for which the proportion needs to be obtained by the sum of the products of the diffraction peak intensity and the WHM of the diffraction peak of each crystal plane orientation.

[0033] As an example, for lead zirconate titanate piezoelectric films, the proportion of (100) is... R （100） The proportion of (110) R （110） The proportion of (111) R （111） The proportion of (211) R （211） for:

[0034]

[0035]

[0036] .

[0037] Furthermore, in one specific embodiment, the step of obtaining the proportion of each crystal plane orientation based on the diffraction peak intensity and the half-width at half maximum (WHM) of the diffraction peak further includes: merging equivalent crystal plane orientations into one crystal plane orientation for proportion calculation, i.e., the proportion in (100). R （100） The proportion of (110) R（110） The proportion of (111) R （111） The proportion of (211) R （211） The proportion of the equivalent crystal plane orientation is already included.

[0038] Step S12: Obtain the actual transmittance of each crystal facet orientation based on the proportion of each crystal facet orientation and the intrinsic transmittance of each crystal facet orientation.

[0039] Step S11 can be used to obtain the proportion of each crystal plane orientation.

[0040] The intrinsic transmittance of each crystal plane orientation is the transmittance of the piezoelectric thin film material when it has a single crystal plane orientation, and it is a constant. As an example, for a lead zirconate titanate piezoelectric thin film, the intrinsic transmittance of (100) is... T （100） The piezoelectric thin film material has a transmittance of (100) only, and an intrinsic transmittance of (110). T （110） The intrinsic transmittance of the piezoelectric thin film material is (110) only when it has (111), and (111) is (111) the intrinsic transmittance. T （111） The intrinsic transmittance of the piezoelectric thin film material is (111) when it only has (211). T （211） The transmittance of the piezoelectric thin film material is when it has only (211).

[0041] In one specific embodiment, the product of the proportion of the crystal plane orientation and the intrinsic transmittance of the crystal plane orientation is used as the actual transmittance of the crystal plane orientation.

[0042] As an example, for lead zirconate titanate piezoelectric films, the actual transmittance of (100) is... T’ （100） Actual transmittance of (110) T’ （110） The actual transmittance of (111) T’ （111） The actual transmittance of (211) T’ （211） for:

[0043]

[0044]

[0045] .

[0046] Step S13: Obtain the sum of the actual transmittance of each crystal plane orientation, and use it as the transmittance of the piezoelectric film of the composite structure.

[0047] As an example, for lead zirconate titanate piezoelectric films, their transmittance... T PZT for: .

[0048] Step S14: Obtain the product of the light transmittance of the glass substrate and the light transmittance of the piezoelectric film in the composite structure, and use this product as the light transmittance of the composite structure. In a specific embodiment, the glass substrate includes a glass substrate and a transparent electrode disposed on the glass substrate, and the piezoelectric film is disposed on the transparent electrode. The step of obtaining the product of the light transmittance of the glass substrate and the light transmittance of the piezoelectric film in the composite structure further includes: obtaining the product of the light transmittance of the glass substrate, the light transmittance of the transparent electrode, and the light transmittance of the piezoelectric film in the composite structure.

[0049] As an example, for a composite structure with a lead zirconate titanate piezoelectric thin film, its transmittance T Total for: .

[0050] Among them, T Glass Let T be the transmittance of the glass substrate, which is the intrinsic transmittance of the glass substrate and is a constant; LNO Let be the transmittance of the transparent electrode, which is the intrinsic transmittance of the transparent electrode and is a constant.

[0051] This invention can determine the transmittance of a glass substrate / piezoelectric thin film composite structure through the above steps, without relying on an integrating sphere and a spectrophotometer with terahertz imaging correction, thus reducing detection costs and improving detection efficiency. Furthermore, it achieves non-destructive testing, and the tested sample can be used for subsequent device fabrication. At the same time, it has high detection efficiency and can be used to detect the transmittance of multiple points in the sample plane, thereby evaluating the in-plane uniformity of the material's transmittance.

[0052] The present invention also provides some embodiments of methods for measuring the transmittance of glass substrate / piezoelectric thin film composite structures.

[0053] Example 1 1. LNO buffer layer electrodes (150 nm) and PZT thin film wafers (1 μm) were fabricated on a glass substrate using magnetron sputtering. 2. The PZT thin film wafer was tested using an X-ray diffractometer. The resulting crystal orientation and diffraction peak patterns are shown below. Figure 3 As shown.

[0054] 3. According to Figure 3 Based on the data from the spectrum shown and the formula, the proportions of the four crystal plane orientations (100), (110), (111), and (211) can be calculated to be 2.39%, 78.86%, 16.07%, and 2.68%, respectively.

[0055] 4. The intrinsic transmittance of the four crystal plane orientations (100), (110), (111), and (211) in the visible light range of 450 nm are 87.58%, 80.58%, 83.89%, and 86.58%, respectively. Therefore, the actual transmittance of the PZT film is 81.44%.

[0056] 5. Given that the intrinsic transmittance of the glass substrate is 95.06% under 450 nm visible light and the intrinsic transmittance of LNO is 93.09% under 450 nm visible light, the transmittance of the glass substrate / PZT piezoelectric thin film composite structure can be calculated to be 72.07%.

[0057] Example 2 1. LNO buffer layer electrodes (150 nm) and PZT thin film wafers (0.8 μm) were fabricated on a glass substrate using magnetron sputtering. 2. The PZT thin film wafer was tested using an X-ray diffractometer. The resulting crystal orientation and diffraction peak patterns are shown below. Figure 4 As shown.

[0058] 3. According to Figure 4 Based on the data from the spectrum shown and the formula, the proportions of the four crystal plane orientations (100), (110), (111), and (211) can be calculated to be 1.95%, 93.60%, 2.86%, and 1.59%, respectively.

[0059] 4. The intrinsic transmittance of the four crystal plane orientations (100), (110), (111), and (211) in the visible light range of 450 nm are 87.58%, 80.58%, 83.89%, and 86.58%, respectively. Therefore, the actual transmittance of the PZT film is 80.91%.

[0060] 5. Given that the intrinsic transmittance of the glass substrate under 450 nm visible light is 95.06% and the intrinsic transmittance of LNO under 450 nm visible light is 93.09%, the transmittance of the glass substrate / PZT piezoelectric thin film composite structure can be calculated to be 71.60%.

[0061] Example 3 1. LNO buffer layer electrodes (150 nm) and PZT thin film wafers (0.6 μm) were fabricated on a glass substrate using magnetron sputtering. 2. The PZT thin film wafer was tested using an X-ray diffractometer. The resulting crystal orientation and diffraction peak patterns are shown below. Figure 5 As shown.

[0062] 3. According to Figure 5 Based on the data from the spectrum shown and the formula, the proportions of the four crystal plane orientations (100), (110), (111), and (211) can be calculated to be 28.87%, 19.91%, 43.03%, and 8.19%, respectively.

[0063] 4. The intrinsic transmittance of the four crystal plane orientations (100), (110), (111), and (211) in the visible light range of 450 nm are 87.58%, 80.58%, 83.89%, and 86.58%, respectively. Therefore, the actual transmittance of the PZT film is 84.52%.

[0064] 5. Given that the intrinsic transmittance of the glass substrate under 450 nm visible light is 95.06% and the intrinsic transmittance of LNO under 450 nm visible light is 93.09%, the transmittance of the glass substrate / PZT piezoelectric thin film composite structure can be calculated to be 74.79%.

[0065] Example 4 1. LNO buffer layer electrodes (150 nm) and PZT thin film wafers (0.4 μm) were fabricated on a glass substrate using magnetron sputtering. 2. The PZT thin film wafer was tested using an X-ray diffractometer. The resulting crystal orientation and diffraction peak patterns are shown below. Figure 6 As shown.

[0066] 3. According to Figure 6 Based on the data from the spectrum shown and the formula, the proportions of the four crystal plane orientations (100), (110), (111), and (211) can be calculated to be 26.28%, 43.23%, 6.97%, and 23.52%, respectively.

[0067] 4. The intrinsic transmittance of the four crystal plane orientations (100), (110), (111), and (211) in the visible light range of 450 nm are 87.58%, 80.58%, 83.89%, and 86.58%, respectively. Therefore, the actual transmittance of the PZT film is 84.06%.

[0068] 5. Given that the intrinsic transmittance of the glass substrate is 95.06% under 450 nm visible light and the intrinsic transmittance of LNO is 93.09% under 450 nm visible light, the transmittance of the glass substrate / PZT piezoelectric thin film composite structure can be calculated to be 74.39%.

[0069] Table 1 below compares the relative error rate of the transmittance obtained by the method of this invention with that of the transmittance tested by a high-precision spectrophotometer. As can be seen from the table, compared with the test results of commercially available high-precision Agilent Cary 7000 spectrophotometer and PerkinElmer Lambda 1050+ spectrophotometer, the transmittance obtained by this invention has an error of less than 3%, which fully meets the actual requirements.

[0070] Table 1

[0071] It should be noted that the terms "comprising" and "having," and their variations, used in this invention document are intended to cover non-exclusive inclusion. The terms "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence, unless explicitly indicated by the context; it should be understood that such use of data can be interchanged where appropriate. The term "one or more" depends at least in part on the context and can be used to describe features, structures, or characteristics in a singular sense, or in a plural sense to describe combinations of features, structures, or characteristics. The term "based on" can be understood as not necessarily intended to express an exclusive set of factors, but can instead, also at least in part on the context, allow for the presence of other factors that are not necessarily explicitly described. Furthermore, embodiments and features in embodiments of this invention can be combined with each other without conflict. In addition, descriptions of well-known components and technologies have been omitted in the above description to avoid unnecessarily obscuring the concepts of this invention. In the various embodiments described above, each embodiment focuses on its differences from other embodiments; similar / identical parts between embodiments can be referred to mutually.

[0072] The above description is only a preferred embodiment of the present invention. It should be noted that those skilled in the art can make several improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for determining the light transmittance of a glass substrate / piezoelectric thin film composite structure, characterized in that, include: The piezoelectric film is a lead zirconate titanate piezoelectric film. The crystal orientation of the lead zirconate titanate piezoelectric film includes (100), (110), (111), and (211). Under the same test conditions, the diffraction peak intensities and half-widths of the diffraction peaks of the lead zirconate titanate piezoelectric films (100), (110), (111), and (211) in the composite structure are obtained. The proportion of each crystal plane orientation is obtained based on the diffraction peak intensity and the half-width at half-maximum of the diffraction peak. The method for obtaining the proportion of each crystal plane orientation includes: dividing the product of the diffraction peak intensity and the half-width at half-maximum of the diffraction peak of the crystal plane orientation for which the proportion needs to be obtained by the sum of the products of the diffraction peak intensity and the half-width at half-maximum of the diffraction peak of each crystal plane orientation, wherein equivalent crystal plane orientations are combined and uniformly calculated for proportion. The actual transmittance of each crystal facet orientation is obtained based on the proportion of each crystal facet orientation and the intrinsic transmittance of each crystal facet orientation. This includes taking the product of the proportion of the crystal facet orientation and the intrinsic transmittance of that crystal facet orientation as the actual transmittance of that crystal facet orientation. The intrinsic transmittance is the transmittance of the piezoelectric thin film material when it has a single crystal facet orientation. The sum of the actual transmittance of each crystal plane orientation is obtained and used as the transmittance of the piezoelectric thin film of the composite structure. The product of the light transmittance of the glass substrate of the composite structure and the light transmittance of the piezoelectric film is obtained and used as the light transmittance of the composite structure.

2. The method according to claim 1, characterized in that, Under the same test conditions, the method for obtaining the diffraction peak intensity and half-width at half-maximum (WHM) of the piezoelectric thin film of each crystal plane orientation in the composite structure includes: using X-ray diffraction analysis to obtain the diffraction peak intensity and WHM of the piezoelectric thin film of each crystal plane orientation in the composite structure under the same test conditions.

3. The method according to claim 1, characterized in that, The step of obtaining the proportion of each crystal plane orientation based on the diffraction peak intensity and the half-width of the diffraction peak further includes: merging the crystal plane orientations equivalent to (100) with (100) for a unified proportion calculation, merging the crystal plane orientations equivalent to (110) with (110) for a unified proportion calculation, merging the crystal plane orientations equivalent to (111) with (111) for a unified proportion calculation, and merging the crystal plane orientations equivalent to (211) with (211) for a unified proportion calculation.

4. The method according to claim 1, characterized in that, The glass substrate includes a glass substrate and a transparent electrode disposed on the glass substrate. The piezoelectric thin film is disposed on the transparent electrode. The step of obtaining the product of the light transmittance of the glass substrate of the composite structure and the light transmittance of the piezoelectric thin film further includes: obtaining the product of the light transmittance of the glass substrate of the composite structure, the light transmittance of the transparent electrode and the light transmittance of the piezoelectric thin film.

5. The method according to claim 4, characterized in that, The transmittance of the glass substrate is the intrinsic transmittance of the glass substrate, and the transmittance of the transparent electrode is the intrinsic transmittance of the transparent electrode.

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