Semiconductor device pressure control method and semiconductor device

Abstract

This invention provides a pressure control method and a semiconductor device, relating to the technical field of semiconductor devices. The pressure control method obtains the actual pressure value of the reaction chamber in real time by preset a minimum pressure limit and a target pressure value, and compares it with the minimum pressure limit. When the actual pressure value is lower than the minimum pressure limit, a pressure compensation operation is performed: the exhaust pipe is closed, the current temperature of the reaction chamber is obtained as a precise temperature value, and the reaction chamber is stabilized at a reference temperature value. The gas in the make-up gas pipe is heated to the reference temperature value, and the required amount of compensation gas is calculated and introduced to achieve pressure compensation. Through active pressure regulation, this invention effectively solves the shortcomings of the undervoltage protection strategy in the prior art, shortens the pressure recovery time, reduces the risk of equipment malfunction, avoids sudden temperature drops and pressure fluctuations caused by low-temperature gas entering the reaction chamber, and improves the accuracy and reliability of pressure compensation.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor equipment, and in particular to a pressure control method and semiconductor equipment for semiconductor equipment. Background Technology

[0002] In semiconductor equipment, pressure control within the reaction chamber is a key factor in ensuring safe operation and process stability. If the pressure within the reaction chamber exceeds the pressure limit, whether under-pressure or over-pressure, it can impact equipment safety.

[0003] Taking undervoltage as an example, existing undervoltage protection strategies for semiconductor devices mostly employ threshold-triggered gas path isolation mechanisms. This means that when the pressure inside the reaction chamber is detected to be lower than a preset lower limit, all inlet and outlet gas ports are closed to suppress the pressure drop. However, this passive undervoltage protection strategy has certain drawbacks. After the gas path is blocked, the chamber lacks active pressure compensation capability and cannot reverse the established negative pressure imbalance. More importantly, the continuous pressure difference between the inside and outside of the chamber introduces additional mechanical stress into the chamber structure and sealing interface. When the external environmental pressure is higher than the internal chamber pressure, the chamber structure will experience superimposed circumferential and axial compressive stresses. If the pressure difference exceeds the design threshold, it may induce chamber instability or sealing failure, and in extreme cases, even lead to structural damage to the chamber. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor device pressure control method and semiconductor device, which solves the problems of insufficient pressure and lack of active pressure regulation capability in the existing undervoltage protection strategy, thereby improving the safety and stability of device operation and reducing the risk of cavity breakage.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0006] According to a first aspect of this disclosure, a pressure control method for a semiconductor device is provided. The semiconductor device includes a reaction chamber and a gas supply line and a gas exhaust line respectively connected to the reaction chamber. The reaction chamber is equipped with a chamber heating assembly, and the gas supply line is equipped with a gas heating assembly. The pressure control method includes:

[0007] The reaction chamber is preset with a minimum pressure limit and a target pressure value, wherein the minimum pressure limit is less than the target pressure value;

[0008] Obtain the actual pressure value of the reaction chamber and compare the actual pressure value with the minimum pressure limit;

[0009] If the actual pressure value is determined to be less than the minimum pressure limit, then the current actual pressure value is used as the reference pressure value, and a pressure compensation operation is performed.

[0010] The pressure compensation operation includes:

[0011] Close the exhaust pipe;

[0012] Obtain the current actual temperature value of the reaction chamber and use it as the reference temperature value;

[0013] The temperature of the reaction chamber is stabilized at the reference temperature value by the cavity heating assembly.

[0014] The gas in the gas supply pipeline is heated to the reference temperature value by the gas heating assembly.

[0015] Based on the reference pressure value, the target pressure value, the volume of the reaction chamber, and the reference temperature value, calculate the amount of compensation gas that needs to be introduced into the reaction chamber;

[0016] Pressure compensation is achieved by introducing the compensation gas into the reaction chamber through the gas supply pipeline.

[0017] In some embodiments, the formula for calculating the amount of compensation gas is:

[0018]

[0019] Where Δn is the amount of compensating gas; V is the volume of the reaction chamber; T is the reference temperature; R is the gas constant, with a value of 8.314 J / (mol·K); P f P0 is the target pressure value, and P1 is the reference pressure value.

[0020] In some embodiments, a flow limiting valve is provided on the gas supply line, and the pressure difference across the flow limiting valve does not exceed a preset pressure difference value, so as to control the gas flow rate of the gas supply line.

[0021] In some embodiments, the gas supply pipeline is connected to multiple gas sources, and the gas heating assembly includes multiple first heating units corresponding to each of the multiple gas sources. The multiple first heating units are used to heat the gas in the multiple gas sources to different preset temperatures.

[0022] By adjusting the flow rate ratio of the multiple gas sources, the temperature of the mixed gas reaches the reference temperature value.

[0023] In some embodiments, the gas supply line is covered with an insulation layer, which is used to reduce heat loss of the gas in the gas supply line.

[0024] In some embodiments, the gas heating assembly includes at least one second heating unit disposed on the gas supply pipeline. The second heating unit is used to compensate for heat loss of the gas in the gas supply pipeline during transmission, so as to stabilize the temperature of the gas in the gas supply pipeline at the reference temperature value.

[0025] In some embodiments, the gas introduced into the reaction chamber through the gas supply line is an inert gas.

[0026] In some embodiments, the semiconductor device further includes a pressure relief valve connected to the reaction chamber, and the pressure control method further includes:

[0027] A maximum pressure limit is preset for the reaction chamber, and the maximum pressure limit is greater than the target pressure value;

[0028] Obtain the actual pressure value of the reaction chamber and compare the actual pressure value with the maximum pressure limit;

[0029] If the actual pressure value is determined to be greater than the maximum pressure limit, the pressure relief valve is opened to release the gas in the reaction chamber.

[0030] In some embodiments, the semiconductor device further includes a tailpipe processing assembly, which is connected to the pressure relief valve via a tailpipe pipeline; the tailpipe processing assembly includes a pressure control unit, which is used to control the pressure range within the tailpipe processing assembly between the minimum pressure limit and the maximum pressure limit.

[0031] In some embodiments, if the actual pressure value is determined to be greater than the maximum pressure limit, the cavity heating assembly is also turned off.

[0032] According to a second aspect of this disclosure, a semiconductor device is provided, the semiconductor device being configured to perform the aforementioned semiconductor device pressure control method.

[0033] Compared with the prior art, the present invention has the following advantages:

[0034] This invention effectively solves the deficiency of passive response in semiconductor equipment under undervoltage conditions by actively performing pressure compensation. When the actual pressure value of the reaction chamber is detected to be lower than the minimum pressure limit, a pressure compensation operation is performed. By using techniques such as closing the exhaust pipe, stabilizing the chamber temperature, heating the compensation gas, and calculating the amount of gas compensation, the pressure recovery time is shortened, the risk of equipment malfunction is reduced, and equipment damage caused by insufficient pressure is avoided.

[0035] This invention avoids sudden temperature drops and pressure fluctuations in the reaction chamber caused by the introduction of low-temperature gas by preheating the compensation gas to the same reference temperature as the chamber. Furthermore, by setting the pressure compensation target to a target pressure value greater than the minimum pressure limit rather than the minimum pressure limit, this invention effectively avoids frequent underpressure alarms triggered by insufficient compensation, thus enhancing the operational stability of the equipment.

[0036] When the actual pressure value of the reaction chamber is detected to be higher than the maximum pressure limit, the present invention opens the pressure relief valve and shuts off the chamber heating component, which can prevent the pressure inside the chamber from rising due to continuous gas expansion.

[0037] This invention employs a dual-pathway architecture and segmented flow control strategy in the design of the gas replenishment pipeline, achieving an organic combination of rapid inflation and fine-tuning. By setting up high-flow-rate and low-flow-rate compensation gas regulation paths, this invention activates the high-flow-rate compensation path to achieve rapid inflation before the total output of compensation gas reaches the preset gas quantity, shortening the gas compensation response time; when the output of compensation gas has reached the preset gas quantity, the high-flow-rate compensation path is closed, and the low-flow-rate compensation path is used for fine-tuning, effectively avoiding gas overshoot and over-adjustment.

[0038] This invention also provides flexible gas heating and temperature control solutions through two configuration methods: multi-gas source and single-gas source. In the multi-gas source gas temperature control method, by connecting multiple inert gas sources with different temperatures and setting multiple first heating units, independent heating and temperature control of multiple gas sources are achieved, maintaining the temperature of each gas source at a preset value. By adjusting the flow rate ratio of multiple gas sources, the required compensation gas temperature is quickly mixed, reducing the waiting time for gas source temperature adjustment, shortening the pressure compensation time, and improving the pressure adjustment response speed. In the single-gas source gas temperature control method, by connecting a single gas source and setting a first heating unit, real-time heating of the gas source and temperature synchronization with the reaction chamber are achieved, ensuring that the temperature of the compensation gas introduced into the reaction chamber is consistent with the temperature inside the reaction chamber. Attached Figure Description

[0039] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0040] Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of the present invention;

[0041] Figure 2 A flowchart of a pressure control method provided in an embodiment of the present invention;

[0042] Figure 3 for Figure 2 A flowchart outlining the specific steps of the pressure compensation operation.

[0043] Figure 4 This is a flowchart of a pressure control method incorporating overpressure detection, provided in an embodiment of the present invention.

[0044] Figure 5 This is a schematic diagram of the air path design for the air supply pipeline and exhaust pipeline provided in an embodiment of the present invention. Detailed Implementation

[0045] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0046] The semiconductor device of the present invention is a semiconductor device with pressure control function, which can be used to control the pressure of the reaction chamber during the semiconductor manufacturing process. The semiconductor device includes, but is not limited to, epitaxial equipment or etching equipment.

[0047] like Figure 1 As shown, in one embodiment, the semiconductor device may be an epitaxial device; the epitaxial device includes a reaction chamber 100 for processing one or more wafers W, including depositing material on the upper surface of the wafers W. The reaction chamber 100 has an upper cavity wall 101 at the top, a lower cavity wall 102 at the bottom, and sidewalls extending between the upper cavity wall 101 and the lower cavity wall 102. Optionally, the upper cavity wall 101 and the lower cavity wall 102 are made of an optically transparent or translucent material that is transparent to thermal energy (such as quartz material that is transparent to a specific infrared band).

[0048] The reaction chamber 100 includes an air inlet 103 at one end and an exhaust 104 at the other end. The interior of the reaction chamber 100 includes an air inlet region corresponding to the air inlet 103, an exhaust region corresponding to the exhaust 104, and a reaction region located between the air inlet region and the exhaust region. The wafer W is located within the reaction region, as shown below. Figure 1 As indicated by the middle arrow, the reaction gas used for deposition flows into the interior space of the cavity from the inlet opening 103, performs the chemical vapor deposition process in the reaction area, and exits the cavity from the exhaust opening 104.

[0049] Please continue reading. Figure 1 The lower cavity wall 102 is provided with a downwardly extending extension tube, which is used to accommodate the rotating shaft 105 extending into the internal space of the reaction chamber 100. The top of the rotating shaft 105 includes multiple support arms 108 for supporting the base 109 and the wafer W on the base 109, so as to drive the base 109 and the wafer W carried by the base 109 to rotate in the reaction region, thereby ensuring the uniformity of thin film deposition on the wafer W. The semiconductor device also includes a driver (not shown in the figure), which is connected to the rotating shaft 105 and configured to drive the rotating shaft 105 to rotate. The two ends of the support arms 108 are respectively connected to the base 109 and the rotating shaft 105, so that the rotating shaft 105 can drive the base 109 to rotate through the support arms 108. Optionally, the rotating shaft 105 may be made of quartz to reduce the risk of particle contamination.

[0050] Furthermore, the semiconductor device also includes multiple cavity heating components 106 that provide thermal radiation to the reaction chamber 100 and the wafer W. Each of the cavity heating components 106 is disposed outside the reaction chamber 100 to heat the reaction chamber 100 and the wafer W inside. To facilitate understanding of temperature changes within the reaction chamber 100, the semiconductor device also includes several pyrometers. Several pyrometers are disposed at the top and bottom of the reaction chamber 100 to collect temperature data at a preset sampling period; wherein, the pyrometer at the top of the reaction chamber 100 is a first pyrometer 107, which is used to measure the top surface temperature of the substrate or wafer; the pyrometer at the bottom of the reaction chamber 100 is a second pyrometer 110, which is used to measure the bottom surface temperature of the substrate. The cavity heating assembly 106 includes a first heating assembly and a second heating assembly. The first heating assembly and the second heating assembly are respectively disposed at the top and bottom of the reaction cavity 100. The first heating assembly located at the top heats the wafer supported on the front side of the base 109, and the second heating assembly located at the bottom heats the back side of the base 109.

[0051] Specifically, cavity heating components 106 are provided above and below the reaction chamber 100. Each cavity heating component 106 provides thermal radiation to the reaction chamber 100 and its wafer W, enabling the interior of the semiconductor device's reaction chamber 100 and the wafer W to reach the required process temperature. This allows the reactive gases in the reaction chamber 100 to undergo thermal decomposition, thereby depositing a thin film material on the upper surface of the wafer W. Simultaneously, a thermometer is used to measure the temperature inside the reaction chamber 100 in real time to control the process progress. Optionally, the thin film material deposited on the upper surface of the wafer W can be a semiconductor material such as silicon and germanium, or it can include other doped materials such as group III, group IV, and / or group V materials. Further optionally, the cavity heating component 106 is a high-intensity tungsten filament lamp with a transparent quartz shell and containing a halogen gas such as iodine. Only a small portion of the radiant heat energy generated by this high-intensity tungsten filament lamp is absorbed by the upper cavity wall 101 and lower cavity wall 102 of the reaction chamber 100, ensuring that the heat energy generated by each cavity heating component 106 is maximized and transferred to the wafer W and reactive gases within the reaction chamber 100. Of course, the cavity heating assembly 106 can also be other devices that can achieve thermal radiation, and the present invention does not limit this.

[0052] In existing technologies, undervoltage protection strategies for semiconductor devices suffer from the problem of ineffective pressure compensation and a lack of active pressure regulation capabilities. The existing undervoltage protection strategy involves closing the inlet opening 103 and the exhaust opening 104 when the pressure inside the reaction chamber 100 is detected to be below a preset threshold. While this approach can suppress further pressure drops, it cannot fundamentally solve the problem of insufficient pressure. This results in an abnormal pressure state within the reaction chamber 100, increasing the risk of abnormal stress on the chamber structure (such as the upper chamber wall 101, lower chamber wall 102, and sidewalls), potentially leading to serious accidents such as chamber fracture.

[0053] like Figure 2 As shown, to solve the above problems, this invention proposes a temperature control method for a semiconductor device. The semiconductor device includes a reaction chamber 100 and a gas supply pipe and an exhaust pipe respectively connected to the reaction chamber 100. The exhaust pipe is connected to the exhaust opening 104. The reaction chamber is equipped with a chamber heating assembly 106. The gas supply pipe is equipped with a gas heating assembly (not shown in the figure). The gas heating assembly is used to heat the gas in the gas supply pipe to prevent low-temperature gas from directly entering the reaction chamber 100, causing a sudden drop in temperature and the resulting pressure fluctuations. The pressure control method includes the following steps:

[0054] S1. A minimum pressure limit and a target pressure value are preset for the reaction chamber 100, wherein the minimum pressure limit is less than the target pressure value;

[0055] S2. Obtain the actual pressure value of the reaction chamber 100 in real time, and compare the actual pressure value with the minimum pressure limit; if the actual pressure value is less than the minimum pressure limit, then take the current actual pressure value as the reference pressure value and perform a pressure compensation operation.

[0056] like Figure 3 As shown, the pressure compensation operation specifically includes the following steps:

[0057] S21. Close the exhaust pipe;

[0058] S22. Obtain the current actual temperature value of the reaction chamber 100 and use it as the reference temperature value;

[0059] S23. The temperature of the reaction chamber 100 is stabilized at the reference temperature value by the cavity heating assembly 106.

[0060] S24. The gas in the gas supply pipeline is heated to the reference temperature value by the gas heating assembly;

[0061] S25. Based on the reference pressure value, the target pressure value, the volume of the reaction chamber 100, and the reference temperature value, calculate the amount of compensation gas that needs to be introduced into the reaction chamber 100.

[0062] The formula for calculating the amount of compensation gas is:

[0063]

[0064] Where Δn is the amount of compensating gas; V is the volume of the reaction chamber; T is the reference temperature; R is the gas constant, with a value of 8.314 J / (mol·K); P f P0 is the target pressure value, and P1 is the reference pressure value.

[0065] The formula for calculating the amount of compensation gas can calculate the amount of compensation gas that needs to be introduced into the reaction chamber 100 using the known reaction chamber volume, reference temperature value, target pressure value, and reference pressure value. This avoids the problem of pressure compensation failure or overcompensation caused by insufficient or excessive gas volume. In addition, the calculation process of this formula is simple and efficient, and it is suitable for real-time pressure compensation operation, improving the response speed and accuracy of pressure control.

[0066] S26. Gas of the compensation amount is introduced into the reaction chamber 100 through the gas replenishment pipeline to achieve pressure compensation and increase the pressure in the reaction chamber 100 to the target pressure value.

[0067] By employing the aforementioned active compensation mechanism, when the actual pressure value of the reaction chamber 100 is detected to be lower than the minimum pressure limit, a pressure compensation operation is performed. Through techniques such as closing the exhaust pipe, stabilizing the chamber temperature, heating the compensation gas, and calculating the compensation amount, this invention effectively solves the shortcomings of passive response under under-pressure conditions in traditional technologies, shortens the pressure recovery time, and reduces the risk of equipment malfunction.

[0068] Crucially, by preheating the compensation gas to the same reference temperature as that inside the reaction chamber 100, this invention fundamentally avoids the sudden drop in chamber temperature and the resulting pressure fluctuations caused by the entry of low-temperature gas, while ensuring the thermodynamic accuracy of gas quantity calculation and significantly improving the precision and reliability of pressure compensation.

[0069] Furthermore, this invention sets the pressure compensation target as a target pressure value rather than a minimum pressure limit. Since the target pressure value is greater than the minimum pressure limit, it ensures that the reaction chamber pressure recovers to the ideal pressure range (greater than or equal to the minimum pressure limit), effectively avoiding frequent underpressure alarms triggered by insufficient compensation. This design not only enhances the operational stability and process continuity of the equipment but also significantly improves the fault tolerance and system robustness of pressure compensation.

[0070] Optionally, the semiconductor device further includes a pressure relief valve connected to the reaction chamber 100, the pressure relief valve being located on the exhaust pipe and used to control the opening and closing of the exhaust pipe;

[0071] like Figure 4 As shown,

[0072] Step S1 further includes: setting a maximum pressure limit for the reaction chamber 100, wherein the maximum pressure limit is greater than the target pressure value; that is, the target pressure value is located between the minimum pressure limit and the maximum pressure limit;

[0073] Step S2 further includes: acquiring the actual pressure value of the reaction chamber 100 in real time and comparing the actual pressure value with the maximum pressure limit; if the actual pressure value is greater than the maximum pressure limit, then opening the pressure relief valve to release the gas in the reaction chamber 100.

[0074] When it is determined that the reaction chamber 100 is overpressured, the pressure relief valve can be opened to reduce the pressure inside the reaction chamber 100, preventing equipment damage caused by excessive pressure inside the reaction chamber 100.

[0075] Optionally, based on thermodynamic principles, under the condition that the volume of the reaction chamber 100 is fixed, the gas temperature and pressure are positively correlated; if heating continues during depressurization, the gas will continue to expand, generating additional pressure increments, which will not only offset the depressurization effect, but may even cause pressure fluctuations to intensify; therefore, when the reaction chamber 100 is over-pressurized (i.e., when the actual pressure value is greater than the maximum pressure limit), the chamber heating component 106 is also turned off.

[0076] Optionally, the gas introduced into the reaction chamber through the gas supply pipeline is an inert gas, including but not limited to nitrogen, argon, and other inert gases. Inert gases have extremely high chemical stability and are not prone to chemical reactions with other substances in the reaction chamber 100, thus avoiding process contamination or equipment damage caused by gas reactions.

[0077] like Figure 5 As shown, the present invention also provides a semiconductor device configured to perform the pressure control method of the present invention; the semiconductor device includes a reaction chamber 100 and a gas supply pipe and a gas exhaust pipe respectively connected to the reaction chamber 100; the reaction chamber is equipped with a chamber heating assembly ( Figure 5 (Not shown in the image); the gas supply pipeline is equipped with a gas heating component ( Figure 5 (not shown in the image); the semiconductor device also includes a pressure sensor (…). Figure 5 (Not shown in the image), the pressure sensor is used to detect the actual pressure value of the reaction chamber 100; when the pressure sensor detects that the actual pressure value of the reaction chamber 100 is less than the minimum pressure limit, the current actual pressure value is used as the reference pressure value, and a pressure compensation operation is performed to increase the actual pressure value of the reaction chamber 100 to the target pressure value; when the pressure sensor detects that the actual pressure value of the reaction chamber 100 is greater than the maximum pressure limit, the pressure relief valve 150 is opened to release the gas in the reaction chamber 100.

[0078] For the air path design of the air supply line and exhaust line, Figure 5 One implementation method is shown;

[0079] The gas supply pipeline includes a main process gas pipeline, a main compensation gas pipeline, a secondary process gas pipeline, and a secondary compensation gas pipeline. The main process gas pipeline is connected to the secondary process gas pipeline, and the main compensation gas pipeline is connected to both the secondary process gas pipeline and the secondary compensation gas pipeline. Several gas flow regulators for controlling gas flow are installed on the main process gas pipeline, the main compensation gas pipeline, the secondary process gas pipeline, and the secondary compensation gas pipeline.

[0080] The main process gas pipeline includes a gas supply source (not shown), a first gas path regulator 160, and a first mass flow meter 161 connected in sequence; the first gas path regulator 160 is used to control the flow rate of the process gas, and the first mass flow meter 161 is used to measure the mass flow rate of the process gas.

[0081] The compensating gas main pipeline includes a gas source (not shown), a main compensating gas inlet pipeline 114, a first compensating gas distribution pipeline, and a second compensating gas distribution pipeline. The gas source is connected to one end of the main compensating gas inlet pipeline 114, and the other end of the main compensating gas inlet pipeline 114 is connected to the first and second compensating gas distribution pipelines respectively. A flow limiting valve 115 and a second gas path regulator 111 are installed on the first compensating gas distribution pipeline. The pressure difference across the flow limiting valve 115 does not exceed a preset pressure difference value to control the gas flow rate in the compensating gas pipeline. The flow limiting valve 115 controls the gas flow rate by limiting the pressure difference across the valve, thereby preventing overpressure caused by excessive compensating gas. Specifically, when the pressure difference across the flow limiting valve 115 exceeds a preset pressure difference value (e.g., 2...), the flow rate is controlled. When the pressure is psi (i.e., the flow limiting valve 115 is a 2Psig flow limiting valve), the valve will adjust its opening to reduce the gas flow rate and ensure that the pressure difference is maintained within a reasonable range. During the pressure compensation process, if too much gas is compensated through the gas replenishment line, it may cause overpressure in the reaction chamber 100. The flow limiting valve 115 can prevent overpressure caused by excessive compensation gas by limiting the gas flow rate. A gas path selector 112 and a third gas path regulator 113 are provided on the second compensation gas distribution line. The flow capacity of the third gas path regulator 113 is configured to be greater than that of the second gas path regulator 111. The two respectively make the second compensation gas distribution line and the first compensation gas distribution line form large flow and small flow compensation gas regulation branches. The gas path selector 112 is used to control the on / off of the second compensation gas distribution line. The large flow second compensation gas distribution line can... To quickly replenish gas to the reaction chamber 100, the gas path selector 112 is activated when the output amount of the compensation gas has not reached the preset gas amount; when the output amount of the compensation gas reaches the preset gas amount, the gas path selector 112 is deactivated. The preset gas amount can be determined by those skilled in the art according to production needs. For example, the preset gas amount can be a certain percentage of the compensation gas amount calculated in step S25, such as 80%. The above dual-path architecture adopts a segmented flow control strategy. Before the total output amount of the compensation gas reaches the preset gas amount, the gas path selector 112 remains open, and the large flow compensation path is activated to achieve rapid gas filling, significantly shortening the gas compensation response time. When the output amount of the compensation gas reaches the preset gas amount, the gas path selector 112 is deactivated, and the small flow compensation path is used for fine adjustment, effectively avoiding gas overshoot and overshoot.

[0082] The process gas sub-pipeline includes a process gas connecting gas path, a first process gas branch path, a second process gas branch path, and a third process gas branch path. The process gas connecting gas path is connected to the first process gas branch path, the second process gas branch path, and the third process gas branch path, respectively. A second mass flow meter 122 and a fourth gas path regulator 123 are installed on the process gas connecting gas path. A first flow meter 130 and a fifth gas path regulator 131 are installed on the first process gas branch path. A second flow meter 132 and a sixth gas path regulator 133 are installed on the second process gas branch path. A third flow meter 134 and a seventh gas path regulator 135 are installed on the third process gas branch path. The process gas sub-pipeline is connected to the reaction chamber 100. The connection position of the process gas sub-pipeline to the reaction chamber 100 can be selected by those skilled in the art according to production needs. For example, the process gas sub-pipeline can introduce gas into the reaction chamber 100 through the gas inlet 103.

[0083] The compensation gas sub-pipe is equipped with a third mass flow meter 120 and an eighth gas path regulator 121. The compensation gas sub-pipe is connected to the reaction chamber 100. The connection position between the compensation gas sub-pipe and the reaction chamber 100 can be selected by those skilled in the art according to production needs. For example, the compensation gas (inert gas, purge gas) can be introduced from the Rotation (rotation mechanism) used for rotating wafers.

[0084] When the pressure sensor detects that the actual pressure value of the reaction chamber 100 is less than the minimum pressure limit, the main process gas pipeline is closed, and at least one of the first and second compensation gas branch lines in the main compensation gas pipeline is opened, so that the compensation gas can reach the process gas auxiliary pipeline and the inlet end of the compensation gas auxiliary pipeline through the main compensation gas pipeline. At this time, the compensation gas can be controlled to pass through the first, second, and third process gas branch lines by adjusting the fourth gas path regulator 123; the compensation gas can also be controlled to pass through the compensation gas auxiliary pipeline by adjusting the eighth gas path regulator 121. Those skilled in the art can select to introduce compensation gas into the reaction chamber 100 from the process gas auxiliary pipeline and / or the compensation gas auxiliary pipeline according to production needs.

[0085] A pressure relief valve 150 (overpressure regulator) is installed on the exhaust pipe. The pressure relief valve 150 is connected to the exhaust treatment assembly 151 through the exhaust pipe. The exhaust treatment assembly 151 includes a pressure control unit, which is used to control the pressure range within the exhaust treatment assembly 151 between the minimum pressure limit and the maximum pressure limit, effectively preventing excessive or insufficient pressure relief.

[0086] It should be noted that, Figure 5 The arrangement of the air supply and exhaust pipes shown is only one preferred embodiment of the present invention, and the present invention does not specifically limit it. Those skilled in the art can, without creative effort, make adaptive adjustments to the number, direction, connection method of the pipes, and the type, number, and installation position of the control valves according to factors such as system pressure level, flow requirements, and spatial layout. Such equivalent modifications all fall within the scope of the technical concept of the present invention.

[0087] This invention provides two implementation methods for gas heating and temperature control in the gas replenishment pipeline. These two methods are based on multi-gas source and single-gas source configurations, respectively, and use different heating and temperature regulation mechanisms to quickly obtain the required temperature of the compensation gas, thereby achieving rapid pressure compensation. The following is a detailed description of the two implementation methods:

[0088] In a first embodiment, the gas supply pipeline is connected to multiple gas sources, each providing an inert gas. Optionally, the inert gas in each gas source is the same (e.g., all nitrogen), but the gas temperature of each gas source is different. The gas heating assembly includes multiple first heating units corresponding one-to-one with the multiple gas sources, each first heating unit used to heat the gas from its corresponding gas source to a different preset temperature. Before the pressure compensation operation, the multiple gas sources have been heated and maintained at different preset temperatures. By adjusting the flow rate ratio of the multiple gas sources, the temperature of the mixed gas quickly reaches the reference temperature value, thereby quickly obtaining compensation gas that reaches the reference temperature value to achieve rapid pressure compensation.

[0089] This method connects multiple inert gas sources with different temperatures to the reaction chamber 100 and sets up multiple first heating units to achieve independent heating and temperature control of multiple gas sources, maintaining the temperature of each gas source at a preset value. By adjusting the flow rate ratio of multiple gas sources, the required temperature compensation gas is quickly mixed, reducing the waiting time for gas source temperature adjustment, shortening the pressure compensation time, and improving the response speed of pressure regulation.

[0090] In the second embodiment, the gas supply pipeline is connected to a gas source, and the gas heating assembly includes a first heating unit for heating the gas in the gas source. The first heating unit is communicatively connected to the thermometer, and is used to acquire the actual internal temperature of the reaction chamber 100 measured by the thermometer in real time, and adjust the heating power of the first heating unit based on the real-time acquired actual internal temperature, so that the temperature of the gas in the gas source is consistent with the real-time acquired actual internal temperature.

[0091] During pressure compensation, the first heating unit dynamically adjusts its heating power based on the actual temperature of the reaction chamber, ensuring that the temperature of the compensation gas introduced into the reaction chamber is consistent with the temperature inside the reaction chamber. This real-time heating and temperature synchronization method avoids pressure compensation errors caused by inconsistencies between the gas temperature and the reaction chamber temperature, further improving the accuracy and reliability of pressure compensation.

[0092] Optionally, the gas supply pipeline is covered with an insulation layer, which is used to reduce heat loss of the gas in the gas supply pipeline.

[0093] Optionally, the gas heating assembly includes at least one second heating unit disposed on the gas supply pipeline. The second heating unit is used to compensate for the heat loss of the gas in the gas supply pipeline during transmission, so as to stabilize the temperature of the gas in the gas supply pipeline at the reference temperature value.

[0094] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, the term "connection" in this document indicates a direct connection between A and B, or an indirect connection between A and B, such as an indirect connection between A and B via C, or even via C and D, or more components. The connection between A and B can be integral or separate, detachable or fixed. The term "optional" in this document indicates that the technical feature can be combined with or not combined with any feature in the document.

[0095] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A method for controlling pressure in a semiconductor device, characterized in that, The semiconductor device includes a reaction chamber and a gas supply line and an exhaust line respectively connected to the reaction chamber. The reaction chamber is equipped with a chamber heating assembly, and the gas supply line is equipped with a gas heating assembly. The pressure control method includes: The reaction chamber is preset with a minimum pressure limit and a target pressure value, wherein the minimum pressure limit is less than the target pressure value; Obtain the actual pressure value of the reaction chamber and compare the actual pressure value with the minimum pressure limit; If the actual pressure value is determined to be less than the minimum pressure limit, then the current actual pressure value is used as the reference pressure value, and a pressure compensation operation is performed. The pressure compensation operation includes: Close the exhaust pipe; Obtain the current actual temperature value of the reaction chamber and use it as the reference temperature value; The temperature of the reaction chamber is stabilized at the reference temperature value by the cavity heating assembly. The gas in the gas supply pipeline is heated to the reference temperature value by the gas heating assembly. Based on the reference pressure value, the target pressure value, the volume of the reaction chamber, and the reference temperature value, the amount of compensation gas to be introduced into the reaction chamber is calculated; the formula for calculating the amount of compensation gas is: Wherein, Δn is the compensation gas amount; V is the volume of the reaction cavity, T is the reference temperature value, R is the gas constant, and the value of R is 8.314 J / (mol·K); P f is the target pressure value, and P0 is the reference pressure value. The gas supply line introduces the compensation gas into the reaction chamber to achieve pressure compensation. The gas supply line is connected to multiple gas sources. The gas heating assembly includes multiple first heating units corresponding to the multiple gas sources. The multiple first heating units are used to heat the gas from the multiple gas sources to different preset temperatures. By adjusting the flow rate ratio of the multiple gas sources, the temperature of the mixed gas reaches the reference temperature value.

2. The semiconductor device pressure control method as described in claim 1, characterized in that, A flow limiting valve is installed on the gas supply line, and the pressure difference across the flow limiting valve does not exceed a preset pressure difference value, so as to control the gas flow rate of the gas supply line.

3. The semiconductor device pressure control method as described in claim 1, characterized in that, The gas supply pipeline is covered with an insulation layer, which is used to reduce heat loss of the gas in the gas supply pipeline.

4. The semiconductor device pressure control method as described in claim 1, characterized in that, The gas heating assembly includes at least one second heating unit disposed on the gas supply pipeline. The second heating unit is used to compensate for the heat loss of the gas in the gas supply pipeline during the transmission process, so as to stabilize the temperature of the gas in the gas supply pipeline at the reference temperature value.

5. The semiconductor device pressure control method as described in claim 1, characterized in that, The gas introduced into the reaction chamber through the gas supply pipeline is an inert gas.

6. The semiconductor device pressure control method as described in claim 1, characterized in that, The semiconductor device further includes a pressure relief valve connected to the reaction chamber, and the pressure control method further includes: A maximum pressure limit is preset for the reaction chamber, and the maximum pressure limit is greater than the target pressure value; Obtain the actual pressure value of the reaction chamber and compare the actual pressure value with the maximum pressure limit; If the actual pressure value is determined to be greater than the maximum pressure limit, the pressure relief valve is opened to release the gas in the reaction chamber.

7. The semiconductor device pressure control method as described in claim 6, characterized in that, The semiconductor device further includes a tail exhaust processing assembly, which is connected to the pressure relief valve via a tail exhaust pipeline; the tail exhaust processing assembly includes a pressure control unit, which is used to control the pressure range within the tail exhaust processing assembly between the minimum pressure limit and the maximum pressure limit.

8. The semiconductor device pressure control method as described in claim 6, characterized in that, If the actual pressure value is determined to be greater than the maximum pressure limit, the cavity heating assembly is also turned off.

9. A semiconductor device, characterized in that, The semiconductor device is configured to perform the semiconductor device pressure control method as described in any one of claims 1 to 8.

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