Bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass and its preparation method

Abstract

This invention discloses a method for preparing a bulk conductive microchannel plate based on hydrogen-reduced special lead silicate glass, comprising the following steps: forming a microchannel array composed of initial microchannels on a special lead silicate glass substrate to obtain a substrate for the microchannel plate; subjecting the substrate to heavy ion bombardment to form densely distributed secondary microchannels within the substrate; subjecting the heavy ion bombardment substrate to hydrogen reduction treatment, where hydrogen diffuses along the initial and secondary microchannels and penetrates into the substrate, and hydrogen reduction reactions occur in all regions of the substrate, thereby achieving uniform conductivity of the inner walls of the initial microchannels; and depositing electrodes on the hydrogen-reduced substrate to obtain the bulk conductive microchannel plate. This invention uses heavy ion treatment of the substrate to achieve uniform conductivity of the microchannel walls, forming a bulk conductive microchannel plate, which has significant advantages such as shorter dead time and reduced ion feedback noise.

Description

Technical Field

[0001] This invention relates to the field of electron multiplier amplifier technology, and more specifically to a method for preparing a bulk conductive microchannel plate based on hydrogen-reduced special lead silicate glass. Background Technology

[0002] A microchannel plate (MCP) is a two-dimensional electron multiplier array, which is equivalent to an array of hundreds of millions of micron-sized channel electron multipliers arranged in parallel. It features high gain, low noise, small size, high spatial resolution and fast time response, and has wide applications in low-light night vision devices, high-energy physics experiments, space environment detection, scientific instruments, and analytical instruments.

[0003] Traditional microchannel plates are made of special lead silicate glass, relying on lead reduced to a certain depth on the inner wall of the channel to achieve weak conductivity. Due to the limited depth of hydrogen reduction, only about 100-200 nm and uneven, adjacent channels are completely insulated from each other. This structure has two main problems in different fields: Problem 1: After electron multiplication is completed in a single channel, the electrons extracted from the inner wall of the channel are replenished by the current in the channel. Since the current is relatively small, the replenishment time is long. During this time, if electrons are injected into the channel again, signal detection and multiplication cannot be achieved again, resulting in a relatively long dead time. Problem 2: With complete insulation between adjacent channels, the electric field inside the microchannel plate will adapt and eventually form an electric field along the channel axis, which has no ability to block the ion feedback generated during electron multiplication.

[0004] To address the issue that only the surface of the channel is conductive, scholars both domestically and internationally have proposed bulk conductive microchannel plates (MCPs). Currently, there are two main categories of reported bulk conductive MCPs: bulk conductive microchannel plates based on phosphate semiconductor glass and bulk conductive microchannel plates made of hydrogenated amorphous silicon.

[0005] The first type is bulk conductive microchannel plates based on phosphate semiconductor glass. The advantage of this type of bulk conductive MPC lies in its material compatibility. When fabricated using phosphate semiconductor glass, there is no need to change the mature manufacturing process of traditional MCPs; existing MCP production equipment, processes, and manufacturing conditions can be directly reused, which is beneficial for mass production. However, this type of MCP has two problems that directly limit its application scope. The first problem is that the lack of alkali metal components in the semiconductor glass leads to lower gain; the second problem is that the bulk conductive MCP made of phosphate semiconductor glass has low mechanical strength, making it difficult to meet the 500G impact resistance requirement of image intensifiers, thus preventing its application in image intensifiers. This problem directly limits the application range of this type of MCP.

[0006] The second type is the bulk conductive microchannel plate based on hydrogenated amorphous silicon material. The core process route of this type of bulk conductive MPC is completely different from that of existing MCPs. It adopts a completely new thick film layer growth and semiconductor processing method, which means that the mature technologies and equipment in the existing MCP production process cannot be directly reused. Its biggest advantage is its integration with the chip. Although it can also be processed into independent components, it has the disadvantages of low efficiency and complex process of thick film layer. At the same time, hydrogenated amorphous silicon contains a large number of dangling bonds, which makes its structural strength very poor. When it is made into independent components like existing microchannel plates, it is difficult to meet the application requirements of image intensifiers with high mechanical strength requirements.

[0007] Existing technical documents:

[0008] Chinese Patent: CN117912927;

[0009] Journal: Characterization of a semiconductor glass and its fabricated bulk conductive microchannel plate [J], Pan Jingsheng et al., Journal of Vacuum Science and Technology, Vol. 32, No. 12, 2012. Summary of the Invention

[0010] The purpose of this invention is to provide a method for preparing a bulk conductive microchannel plate based on hydrogen-reduced special lead silicate glass. Before the hydrogen reduction process, the substrate of the microchannel plate is treated with heavy ions to achieve a uniform conductive state of the microchannel walls, thus forming a bulk conductive microchannel plate. This method has the significant advantages of shorter dead time and reduced ion feedback noise.

[0011] According to a first aspect of the present invention, a method for preparing a bulk conductive microchannel plate based on hydrogen-reduced special lead silicate glass is provided, comprising the following steps:

[0012] A microchannel array consisting of initial microchannels is formed on a special lead silicate glass substrate to obtain the substrate of the microchannel plate;

[0013] The substrate is subjected to heavy ion bombardment to form densely distributed secondary microchannels inside the substrate;

[0014] Subsequently, the substrate treated with heavy ion bombardment was subjected to hydrogen reduction treatment. Hydrogen diffused and penetrated into the substrate through the initial microchannel and secondary microchannel, and hydrogen reduction reaction occurred in various regions of the substrate. The reaction products generated by the hydrogen reduction reaction were discharged along the initial microchannel and secondary microchannel, thereby achieving overall uniform conductivity of the inner wall of the initial microchannel.

[0015] Electrodes were deposited on a hydrogen-reduced substrate to obtain the bulk conductive microchannel plate.

[0016] As an optional implementation, the heavy ion bombardment treatment specifically includes: bombarding the substrate with a heavy ion beam at a certain angle.

[0017] As an optional implementation, the heavy ions include one or more of C, N, O, Ne, Si, Ar, Fe, and Xe.

[0018] As an optional implementation, the heavy ions have an energy exceeding 50 MeV and a penetration depth of over 100 μm in the glass.

[0019] As an optional implementation, the bombardment of the substrate with a heavy ion beam at a certain angle specifically includes: bombarding the substrate with a heavy ion beam, wherein the angle between the incident direction of the heavy ions and the axis of the initial microchannel is in the range of 30° to 90°.

[0020] As an optional implementation, during the bombardment of the substrate with a heavy ion beam, the substrate rotates around the axis of the heavy ion incident direction.

[0021] As an optional implementation, the average distance between adjacent secondary microchannels is within 100 nm.

[0022] As an optional implementation, after the substrate is bombarded with heavy ions, the secondary microchannels formed are treated with acid to enlarge the pore size of the secondary microchannels.

[0023] As an optional implementation, the pore size of the secondary microchannel is increased to 2 nm to 10 nm.

[0024] In a second aspect of the present invention, a bulk conductive microchannel plate prepared according to the aforementioned method is provided.

[0025] As can be seen from the above technical solution of the present invention, the method for preparing a bulk conductive microchannel plate based on hydrogen-reduced special lead silicate glass proposed in this invention forms a dense secondary microchannel inside the substrate of the microchannel plate through heavy ion bombardment with its high-energy penetration, thus constructing a three-dimensional mass transfer network. This structure overcomes the limitation of hydrogen diffusion caused by the density of glass in conventional unbombarded substrates. Hydrogen can penetrate deeply into the entire substrate along the secondary microchannels, and hydrogen reduction reaction occurs uniformly everywhere. Moreover, the reaction products can be discharged in time through the pores, ultimately achieving uniform conductivity of the microchannel inner wall and the substrate body as a whole.

[0026] The method of this invention only requires adding a heavy ion bombardment treatment step before hydrogen reduction in the mature manufacturing process of traditional MCP to obtain a bulk conductive microchannel plate with uniform conductivity of the inner wall of the microchannel and the substrate. It can directly reuse the existing MCP production equipment, processes and manufacturing conditions, laying the foundation for large-scale mass production and reducing the cost of technology transfer and capacity building. Attached Figure Description

[0027] Figure 1 This is a comparison diagram of conventional MCP and bulk conductive MCP, which are exemplary embodiments of the present invention.

[0028] Figure 2 This is a flowchart illustrating the fabrication process of a bulk conductive MCP according to an exemplary embodiment of the present invention.

[0029] Figure 3 This is a schematic diagram of heavy ion bombardment, MCP rotation, and track, taken as an example of a microchannel during the fabrication of a bulk conductive MCP according to an exemplary embodiment of the present invention.

[0030] Figure 4 The resistivity test data at different locations of the bulk conductive MCP and conventional MCP are provided in an exemplary embodiment of the present invention.

[0031] Figure 5 This is a schematic diagram illustrating the electric field direction within the channel of a bulk conductive MCP and a conventional MCP, based on an exemplary embodiment of the present invention. Detailed Implementation

[0032] To better understand the technical content of the present invention, specific embodiments are described below in conjunction with the accompanying drawings.

[0033] Various aspects of the invention are described in this disclosure with reference to the accompanying drawings, in which numerous illustrative embodiments are shown. The embodiments of this disclosure are not necessarily intended to encompass all aspects of the invention. It should be understood that the various concepts and embodiments described above, as well as those described below in more detail, can be implemented in any of a number of ways.

[0034] Microchannel plates (MCPs) are typically made from glass sheets and glass cores as raw materials. After multiple processes such as wire drawing, screen arrangement, bar arrangement, wire drawing, screen arrangement, screen pressing, slicing, rough grinding, edge beveling, polishing, and etching, a microchannel array is formed. Then, after hydrogen reduction, the required film layers are deposited on both sides of the hydrogen-reduced substrate, i.e., the input and output surfaces, to obtain the final product.

[0035] Combination Figure 1As shown, taking a microchannel 1 as an example, conventional microchannel plates generally use special lead silicate glass materials. During the hydrogen reduction process, due to the limited diffusion depth of hydrogen, the hydrogen reduction reaction only occurs within a certain depth of the glass surface, forming a thin layer 3 (about 100~200nm) with conductivity. The interior 2 of the microchannel wall is not conductive, and the resistivity difference at different depths (depth refers to the distance from the inner wall of the channel to the interior of the solid glass material) is very large, making it impossible to achieve overall conductivity of the inner wall of the microchannel, and even more difficult to meet the requirement of uniform conductivity for bulk conductive microchannel plates.

[0036] Therefore, in the fabrication process of the microchannel plate, the present invention uses a special lead silicate glass material commonly used in conventional microchannel plates. After multiple processes such as wire drawing, screen arrangement, bar arrangement, wire drawing, screen arrangement, screen pressing, slicing, rough grinding, edge beveling, polishing, and etching, a substrate with a microchannel array (hereinafter referred to as the substrate) is formed. Before hydrogen reduction, the substrate is bombarded with a heavy ion beam for a period of time. Heavy ions have high energy and strong penetration ability. The bombardment process can form dense micropores in the substrate. After heavy ion bombardment, hydrogen reduction treatment is performed to achieve a microchannel wall 4 with an overall uniform conductive state, thus forming a bulk conductive microchannel plate.

[0037] Combination Figure 2 As shown, in one example of the present invention, a method for preparing a bulk conductive microchannel plate based on hydrogen-reduced special lead silicate glass is provided, comprising the following steps:

[0038] Special lead silicate glass material undergoes drawing, screen arrangement, rod arrangement, drawing multiple wires, screen arrangement, screen pressing, slicing, rough grinding, edge beveling, polishing, and etching to remove the core material 5 and retain the skin material 6, forming a microchannel array composed of the initial microchannels 7, thus obtaining the substrate of the microchannel plate.

[0039] The substrate is subjected to heavy ion bombardment to form densely distributed secondary microchannels inside the substrate.

[0040] Understandably, the formation of densely distributed secondary microchannels within the substrate refers to the formation of secondary microchannels both inside the solid glass material between adjacent initial microchannels and on the surface of the substrate itself.

[0041] Subsequently, the substrate treated with heavy ion bombardment was subjected to hydrogen reduction treatment. Hydrogen diffused and penetrated into the interior of the substrate along the initial microchannel and secondary microchannel, and hydrogen reduction reaction occurred in various regions of the substrate. The reaction products generated by the hydrogen reduction reaction were discharged along the initial microchannel and secondary microchannel. With the assistance of the track of heavy ion bombardment, hydrogen reduction formed an overall conductive region 9, thereby achieving overall uniform conductivity of the inner wall of the initial microchannel.

[0042] It is understandable that hydrogen reduction reactions occur in all regions of the substrate, meaning that hydrogen reduction reactions occur throughout the entire substrate, especially in the inner wall of the initial microchannel, at different depths from the inner wall.

[0043] Electrode 10 is deposited on the hydrogen-reduced substrate to obtain the bulk conductive microchannel plate.

[0044] In some embodiments, heavy ion bombardment specifically includes bombarding the substrate with a heavy ion beam at a certain angle.

[0045] In some embodiments, the heavy ions include one or more of C, N, O, Ne, Si, Ar, Fe, and Xe.

[0046] In some implementations, the heavy ions have energies exceeding 50 MeV and achieve a penetration depth of over 100 μm in the glass.

[0047] Understandably, the energy of heavy ions refers to the energy of a single heavy ion exceeding 50 MeV.

[0048] In some implementations, such as Figure 3 As shown, a heavy ion beam is used to bombard the substrate at a certain angle. Specifically, the heavy ion beam is used to bombard the substrate, wherein the angle between the incident direction of the heavy ions and the axis of the initial microchannel is in the range of 30° to 90°.

[0049] In some implementations, such as Figure 3 As shown, in order to improve uniformity, the substrate can rotate around the axis of the heavy ion incident direction during the bombardment of the substrate by a heavy ion beam.

[0050] In some implementations, the base rotates at a speed of 5 to 100 revolutions per minute.

[0051] In some implementations, such as Figure 3 As shown, the dose of heavy ion bombardment is controlled, for example, by controlling the bombardment time to control the dose, so that the average distance D between adjacent tracks formed by heavy ions in the microchannel plate (i.e., the distance between adjacent secondary microchannels) is within 100 nm.

[0052] Understandably, the dose of heavy ion bombardment refers to the total number of heavy ions received per unit area. At the same energy, the dose of ion Z... 2 The larger / A (Z is the charge number and A is the mass number), the shorter the bombardment time required for the same distance, and the smaller the distance for the same time.

[0053] In some embodiments, the pore size of the secondary microchannel is 0.1 nm to 1 nm, and is particularly preferably 0.5 nm.

[0054] In some embodiments, after the microchannel substrate is treated with heavy ion bombardment, the secondary microchannels formed when heavy ions pass through can be used directly, or the pore size of the secondary microchannels can be appropriately enlarged by using acid; for example, acid treatment for 0 to 30 minutes.

[0055] In some implementations, the pore size of the secondary microchannels is increased to 2 nm to 10 nm.

[0056] Understandably, acid treatment will also affect the pore size of the initial microchannels, but the effect is small and negligible for larger pore sizes, while it has a greater effect on smaller pore sizes, thereby expanding the pore size of the secondary microchannels.

[0057] In some embodiments, the special lead silicate glass material system contains one or more alkali metal elements such as K, Na, Cs, and Rb, as well as oxide components such as Pb and Bi that can be reduced by hydrogen to conductive metals.

[0058] In some embodiments, the special lead silicate glass material system is the glass material system of the second-generation microchannel plate, that is, silicate glass containing alkali metal elements K and Na, as well as Pb and Bi elements.

[0059] In some embodiments, the special lead silicate glass material system is a third-generation microchannel plate glass material system, namely silicate glass containing alkali metal elements Cs and Rb, as well as Pb and Bi elements.

[0060] It is understandable that commercially available materials can be directly used for special lead silicate glass material systems, as long as the above requirements are met; and the processes of wire drawing, screen arrangement, bar arrangement, wire drawing, screen arrangement, screen pressing, slicing, rough grinding, edge beveling, polishing, etching, as well as hydrogen reduction and electrode plating are existing technologies and will not be elaborated here.

[0061] In another example of the present invention, a bulk conductive microchannel plate prepared according to the aforementioned method is provided; the overall bulk resistance of the microchannel plate is 10 MΩ to 500 MΩ, and the resistivity is uniform in different regions of the channel wall, forming a bulk conductive state; the dead time of a single channel is significantly shortened, which can be shortened by 1 to 2 orders of magnitude compared with a conventional MCP with the same bulk resistance; the direction of the electric field in the channel is adaptively deflected, which can significantly reduce ion feedback noise.

[0062] This invention employs a heavy ion beam of specific energy to bombard the substrate of a microchannel plate for a predetermined duration. Due to the extremely high kinetic energy and penetrating power of heavy ions, they collide violently with atoms in the glass matrix during the penetration of the microchannel plate substrate, causing displacement of matrix atoms and damage to the crystal structure. This results in the formation of a large number of densely distributed microchannels inside the substrate (including the pore walls of the initial microchannels and the substrate body). These microchannels have good connectivity and uniform distribution, forming a three-dimensional mass transfer network that penetrates the interior of the glass material, providing a key pathway for mass transport in the subsequent hydrogen reduction process.

[0063] The three-dimensional mass transfer network formed by these numerous densely distributed micropores fundamentally improves the mass transfer efficiency and reaction uniformity of the hydrogen reduction process.

[0064] (1) Hydrogen can diffuse rapidly along the micro-pores, break through the diffusion barrier of dense glass, and efficiently penetrate into the entire area of ​​the substrate (including the deep layer of the initial microchannel pore wall and the interior of the substrate body), ensuring that the reaction system can contact sufficient hydrogen in all parts of the material to complete the deep penetration of hydrogen.

[0065] (2) With the full penetration of hydrogen, the hydrogen reduction reaction can occur simultaneously in all areas of the glass material (without reaction blind zone), so that the lead-containing components in the lead silicate glass are uniformly converted into conductive reduction products throughout the entire range, thus achieving uniform reaction throughout the entire range.

[0066] (3) Byproducts generated by hydrogen reduction reaction (such as water or other gaseous products) can be discharged in time through dense micropores, avoiding the accumulation of products inside the material and thus preventing the reaction from being hindered. This further ensures the thoroughness and uniformity of the reaction and completes the efficient discharge of reaction products.

[0067] Thus, after combined heavy ion bombardment and hydrogen reduction, a continuous and uniform conductive phase (not limited to a thin layer on the surface) is formed on the initial microchannel inner wall and the interior of the substrate of the microchannel plate. This achieves the transformation from surface thin-layer conductivity to bulk overall conductivity, ultimately obtaining a bulk conductive microchannel plate with uniform conductivity throughout the entire domain. This effectively solves the problem of uneven conductivity caused by mass transfer limitations in traditional hydrogen reduction, and significantly improves the conductivity stability and application performance of the microchannel plate.

[0068] To facilitate better understanding, the present invention will be further illustrated below with several specific examples, but the preparation process is not limited to these examples, and the content of the present invention is not limited to these examples.

[0069] Unless otherwise specified, the materials in the examples are prepared according to existing methods or purchased directly from the market.

[0070] Example 1

[0071] 1. The special lead silicate glass material system is a silicate glass containing alkali metal elements K and Na, as well as Pb and Bi elements. Based on this glass material system, a microchannel plate substrate (25 mm diameter, 20 mm effective area, 4 μm aperture, 6° bevel angle) is fabricated according to the conventional process of wire drawing, screen arrangement, rod arrangement, multi-wire drawing, screen arrangement, screen pressing, slicing, rough grinding, edge beveling, polishing, and etching. Figure 2 The MCP substrate in the middle is composed of two glass materials, core material 5 and skin material 6, which are etched to form pores.

[0072] 2. The microchannel plate blank was etched using heavy ion bombardment. The heavy ions were carbon ions with an energy of 1 GeV. The incident direction of the carbon ions was at a 60° angle to the microchannel axis. During bombardment, to improve uniformity, the MCP substrate rotated around the incident direction of the heavy ions at a speed of 10 r / min. The tracks formed by heavy ion bombardment in the MCP substrate are shown below. Figure 2 As shown in Figure 8.

[0073] 3. The bombardment time of heavy ions was controlled to be 20 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate was 30 nm.

[0074] 4. After ion bombardment, the MCP substrate was soaked in low-concentration hydrofluoric acid (mass concentration of 0.05%) and subjected to ultrasonic treatment to appropriately enlarge the tracks formed by heavy ions in the MCP substrate. The acid treatment time was 10 min, and the pore size reached 3 nm.

[0075] 5. The microchannel plate blank after heavy ion bombardment was subjected to hydrogen reduction. The hydrogen reduction temperature and time were controlled, and the plate was treated at 400℃ for 5 hours to achieve a bulk resistivity of 100 MΩ. The entire thickness of the channel wall was completely reduced by hydrogen. Figure 2 As shown in Figure 9, a state of bulk conductivity is formed.

[0076] 6. Plating NiCr electrodes (Ni 80 Cr 20 (with a depth of 0.5 times the initial microchannel aperture and a thickness of 100 nm), such as Figure 2 As shown in Figure 10, a bulk conductive microchannel plate is formed.

[0077] Example 2

[0078] The difference from Example 1 is that the heavy ion is N; the bombardment time of the heavy ion is controlled to be 17 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 28 nm.

[0079] Example 3

[0080] The difference from Example 1 is that the heavy ion is O; the bombardment time of the heavy ion is controlled to be 15 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 26 nm.

[0081] Example 4

[0082] The difference from Example 1 is that the heavy ion is Ne; the bombardment time of the heavy ion is controlled to be 12 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 23 nm.

[0083] Example 5

[0084] The difference from Example 1 is that the heavy ion is Si; the bombardment time of the heavy ion is controlled to be 9 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 20 nm.

[0085] Example 6

[0086] The difference from Example 1 is that the heavy ion is Ar; the bombardment time of the heavy ion is controlled to be 8 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 19 nm.

[0087] Example 7

[0088] The difference from Example 1 is that the heavy ion is Fe; the bombardment time of the heavy ion is controlled to be 5 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 16 nm.

[0089] Example 8

[0090] The difference from Example 1 is that the heavy ion is Xe; the bombardment time of the heavy ion is controlled to be 3 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 12 nm.

[0091] Example 9

[0092] The difference from Example 1 is that the heavy ions are C and N (mass ratio 1:1); the bombardment time of the heavy ions is controlled to be 18 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 29 nm.

[0093] Example 10

[0094] The difference from Example 1 is that the heavy ions are C, N and O (mass ratio 1:1:1); the bombardment time of the heavy ions is controlled to be 17 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 28 nm.

[0095] Example 11

[0096] The difference from Example 1 is that the heavy ions are C, N, O and Ne (mass ratio 1:1:1:1); the bombardment time of the heavy ions is controlled to be 16 min, so that the average distance between adjacent tracks formed by heavy ions in the MCP substrate is 27 nm.

[0097] Comparative Example 1

[0098] 1. The special lead silicate glass material system is a silicate glass containing alkali metal elements K and Na, as well as Pb and Bi elements. Based on this glass material system, a microchannel plate substrate (25 mm diameter, 20 mm effective area, 4 μm aperture, 6° bevel angle) is fabricated according to the conventional process of wire drawing, screen arrangement, rod arrangement, multi-wire drawing, screen arrangement, screen pressing, slicing, rough grinding, edge beveling, polishing, and etching. Figure 2 The MCP substrate in the middle is composed of two glass materials, core material 5 and skin material 6, which are etched to form pores.

[0099] 2. The microchannel plate blank was subjected to hydrogen reduction, and the hydrogen reduction temperature and time were controlled. It was treated at 400℃ for 5 hours to achieve a bulk resistivity of 100 MΩ.

[0100] 3. Plating NiCr electrodes (Ni 80 Cr 20 A microchannel plate is formed with a depth of 0.5 times the initial microchannel aperture and a thickness of 100 nm.

[0101] like Figure 1 As shown, in the bulk conductive microchannel plate formed by the method of the present invention, the channel walls between adjacent channels are completely reduced by hydrogen, forming a glass material with relatively uniform resistivity; while in Comparative Example 1, the channel walls are only reduced by hydrogen at a certain depth of 100~200nm on the surface, and the reduction is uneven, which is a conventional surface conductive state.

[0102] The resistivity test data of the bulk conductive microchannel plate (Example 1) and the conventional microchannel plate (Comparative Example 1) in the comparative embodiments of the present invention are as follows: Figure 3As shown, the resistivity of the bulk conductive microchannel plate is relatively uniform at different depths of the channel inner wall, at 3.5E9 Ω•cm; while the resistivity of conventional microchannel plates varies greatly with depth, exhibiting an exponential change, with the outermost layer at 2E8 Ω•cm, increasing to nearly 1E11 Ω•cm within a depth range of 250 nm, a difference of more than two orders of magnitude. This indicates that after the bulk conductive microchannel plate of the present invention undergoes combined treatment with heavy ion bombardment and hydrogen reduction, a continuous and uniform conductive phase is formed on the initial microchannel inner wall and inside the substrate of the microchannel plate.

[0103] The different resistivity distribution within a conventional MCP channel leads to changes in the electric field within the channel, such as... Figure 4 As shown, the electric field in a conventional MCP channel is along the channel axis; while the resistivity of a bulk conductive MCP channel is similar at different depths on the inner wall, and the electric field in the channel has an angle with the channel axis. This angle depends on the chamfer angle of the MCP, which is usually 5°~10°. This angle can block particle feedback and achieve comprehensive performance optimization, including reducing signal noise and spurious signals, improving signal purity, detection accuracy and resolution, and extending device lifespan.

[0104] As can be seen from the above, the initial microchannel inner wall and the interior of the substrate of the microchannel plate of the present invention form a continuous and uniform conductive phase, thereby obtaining a bulk conductive microchannel plate with uniform conductivity over the entire domain. This effectively solves the problem of uneven conductivity caused by mass transfer limitation in traditional hydrogen reduction, and significantly improves the conductivity stability and application performance of the microchannel plate.

[0105] While the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the invention. Those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention shall be determined by the claims.

Claims

1. A method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass, characterized in that, Includes the following steps: A microchannel array consisting of initial microchannels is formed on a lead silicate glass substrate to obtain the substrate of the microchannel plate; The substrate is subjected to heavy ion bombardment to form densely distributed secondary microchannels inside the substrate; Subsequently, the substrate treated with heavy ion bombardment was subjected to hydrogen reduction treatment. Hydrogen diffused and penetrated into the substrate through the initial microchannel and secondary microchannel, and hydrogen reduction reaction occurred in various regions of the substrate. The reaction products generated by the hydrogen reduction reaction were discharged along the initial microchannel and secondary microchannel, thereby achieving overall uniform conductivity of the inner wall of the initial microchannel. Electrodes were deposited on a hydrogen-reduced substrate to obtain the bulk conductive microchannel plate.

2. The method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass according to claim 1, characterized in that, The heavy ion bombardment treatment specifically includes: bombarding the substrate with a heavy ion beam; wherein the angle between the incident direction of the heavy ions and the axis of the initial microchannel is in the range of 30° to 90°.

3. The method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass according to claim 1 or 2, characterized in that, Heavy ions include one or more of C, N, O, Ne, Si, Ar, Fe, and Xe.

4. The method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass according to claim 1 or 2, characterized in that, The heavy ions have energies exceeding 50 MeV and can penetrate glass to a depth of over 100 μm.

5. The method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass according to claim 2, characterized in that, During the bombardment of the substrate by a heavy ion beam, the substrate rotates around the axis of the heavy ion incident direction.

6. The method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass according to claim 2, characterized in that, The average distance between adjacent secondary microchannels is less than 100 nm.

7. The method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass according to claim 1, characterized in that, After the substrate is bombarded with heavy ions, the secondary microchannels formed are treated with acid to enlarge their pore size.

8. The method for preparing a bulk conductive microchannel plate based on hydrogen-reduced lead silicate glass according to claim 7, characterized in that, The pore size of the secondary microchannels is increased to 2 nm to 10 nm.

9. A bulk conductive microchannel plate prepared by the method according to any one of claims 1-8.

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