Method and apparatus for measuring warpage of epitaxial material

Abstract

This invention discloses a method and apparatus for measuring the warpage of epitaxial materials. The method includes dividing the epitaxial material into a predetermined number of grid points along a first direction and a second direction, with a predetermined distance between adjacent grid points; obtaining the height of each grid point in a third direction; wherein the first direction, the second direction, and the third direction are mutually perpendicular; obtaining the maximum, minimum, and average height of each grid point in the third direction based on its height; and calculating the warpage of the epitaxial material based on the relationship between the maximum, minimum, and average heights. This invention enables preliminary measurement of the warpage of epitaxial materials, with a convenient measurement process and low cost.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device technology, and in particular to a method and apparatus for measuring the warpage of epitaxial materials. Background Technology

[0002] Molecular beam epitaxy (MBE), as an ultra-high vacuum thin film preparation technology, can control the growth of thin films with atomic-level precision and is a core process for preparing high-performance semiconductor optoelectronic devices (such as lasers and detectors).

[0003] In MBE (Metal-Based Embedding) processes, lattice mismatch and differences in thermal expansion coefficients between the epitaxial layer and the substrate material generate stress within the epitaxial wafer, causing warpage. This warpage is a key parameter for evaluating the quality of epitaxial materials. Excessive warpage not only affects the yield of subsequent micro / nano fabrication processes such as photolithography and etching, but also directly alters the band structure of active regions such as quantum wells, ultimately leading to device performance degradation or even failure. Currently, the industry typically relies on large, precision instruments such as specialized contact probe profilometers or non-contact laser interferometers to measure warpage. These devices are expensive to purchase and maintain, making them unaffordable for many R&D or production units. Furthermore, the measurement process usually requires specialized testing laboratories, resulting in long sample submission, queuing, and report waiting times, severely impacting R&D iteration cycles and production efficiency. Summary of the Invention

[0004] This invention provides a method and apparatus for measuring the warpage of epitaxial materials, enabling preliminary measurement of the warpage of epitaxial materials, and has the advantages of convenient measurement process and low measurement cost.

[0005] In a first aspect, embodiments of the present invention provide a method for measuring the warpage of an epitaxial material, the method comprising:

[0006] A predetermined number of grid points are divided on the epitaxial material along the first and second directions, with a predetermined distance between adjacent grid points;

[0007] The height of each grid point on the epitaxial material in the third direction is obtained; wherein the first direction, the second direction, and the third direction are perpendicular to each other.

[0008] Based on the height of each grid point in the third direction, the maximum height, minimum height, and average height of each grid point in the third direction are obtained;

[0009] The warpage of the epitaxial material is calculated based on the relationship between the maximum height, the minimum height, and the average height.

[0010] Optionally, calculating the warpage of the epitaxial material based on the relationship between the maximum height, the minimum height, and the average height includes:

[0011] The warpage of the epitaxial material is calculated based on the difference between the maximum height and the average height, and the difference between the minimum height and the average height.

[0012] Optionally, the warpage of the epitaxial material is calculated based on the difference between the maximum height and the average height, and the difference between the minimum height and the average height, including:

[0013] The warpage of the epitaxial material satisfies:

[0014] Z = |M1-N| + |M2-N|;

[0015] Where Z is the warpage of the epitaxial material, M1 is the maximum height, M2 is the minimum height, and N is the average height.

[0016] Optionally, the epitaxial material is circular, and the step of dividing the epitaxial material into a predetermined number of grid points, with a predetermined distance between adjacent grid points, includes:

[0017] A maximum square is defined within the circular surface of the epitaxial material;

[0018] The maximum square is divided into a predetermined number of grid points, with a predetermined distance between adjacent grid points.

[0019] Optionally, the maximum square is divided into a predetermined number of grid points, with adjacent grid points spaced at a predetermined distance, including:

[0020] The largest square is divided into n×n smaller squares of equal area. A grid point is set at the vertex of each smaller square, and the interval between adjacent grid points is the preset distance. The preset number is n×n, n>1, and n is an integer. The side length of each smaller square is the preset distance, and the side length of the largest square is n times the preset distance.

[0021] Optionally, the epitaxial material includes a thin film material, which is formed by depositing a source material on a substrate via molecular beam epitaxy. Each grid point on the thin film material is located on one side of the deposited source material. Obtaining the height of each grid point on the epitaxial material in the third direction includes:

[0022] Measure and obtain the height of each of the grid points on the thin film material in the third direction.

[0023] Secondly, embodiments of the present invention also provide a device for measuring the warpage of epitaxial materials. The device for measuring the warpage of epitaxial materials is used to perform the method for measuring the warpage of epitaxial materials described in any embodiment of the present invention. The device for measuring the warpage of epitaxial materials includes a control module and a height recognition module, and the control module is connected to the height recognition module.

[0024] The height recognition module is used to measure the height of each grid point on the epitaxial material in the third direction;

[0025] The control module is used to divide a preset number of grid points on the epitaxial material along a first direction and a second direction, with a preset distance between adjacent grid points;

[0026] The control module is further configured to obtain the height of each grid point on the epitaxial material in the third direction through the height recognition module; wherein the first direction, the second direction, and the third direction are perpendicular to each other.

[0027] The control module is further configured to obtain the maximum, minimum and average heights of each grid point in the third direction based on the height of each grid point in the third direction, and calculate the warpage of the epitaxial material based on the relationship between the maximum, minimum and average heights.

[0028] Optionally, the height recognition module is an optical microscope equipped with a Z-axis grating ruler, which is used to measure the height of each grid point on the epitaxial material in the third direction.

[0029] Optionally, the device for measuring the warpage of epitaxial materials may also include a measuring base;

[0030] The measuring base is used to support the epitaxial material, and the height of each grid point on the epitaxial material in the third direction is the distance between the contact surface between the measuring base and the epitaxial material and the corresponding grid point.

[0031] Optionally, the device for measuring the warpage of the epitaxial material further includes a leveling component, which is disposed on the measuring base and is used to level the measuring base.

[0032] This invention provides a method and apparatus for measuring the warpage of epitaxial materials. The method includes: dividing the epitaxial material into a predetermined number of grid points along a first direction and a second direction, with a predetermined distance between adjacent grid points, to measure the height of various positions on the surface of the epitaxial material; obtaining the height of each grid point on the epitaxial material in a third direction, where the first direction, the second direction, and the third direction are perpendicular to each other, making data acquisition relatively easy and allowing measurement of the height of each grid point on the epitaxial material using various low-cost devices; obtaining the maximum, minimum, and average height of each grid point in the third direction based on its height; and calculating the warpage of the epitaxial material based on the relationship between the maximum, minimum, and average heights, thus achieving a preliminary measurement of the warpage of the epitaxial material. The measurement process is convenient and cost-effective. Attached Figure Description

[0033] Figure 1 A flowchart illustrating a method for measuring the warpage of an epitaxial material, provided as an embodiment of the present invention;

[0034] Figure 2 This is a schematic diagram of dividing grid points on an epitaxial material according to an embodiment of the present invention;

[0035] Figure 3 This is a side view of the epitaxial material provided in an embodiment of the present invention;

[0036] Figure 4 A flowchart illustrating another method for measuring the warpage of epitaxial materials provided in an embodiment of the present invention;

[0037] Figure 5 This is a schematic diagram of a device for measuring the warpage of an epitaxial material, provided in an embodiment of the present invention. Detailed Implementation

[0038] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0039] Existing technologies, limited by high equipment costs and lengthy outsourced testing cycles, cannot meet the needs of R&D and production lines for rapid, low-cost, and convenient preliminary warpage measurement. This has become a bottleneck restricting the efficiency of epitaxial material development and device fabrication. Therefore, there is an urgent need in this field for a novel measurement method that can overcome the above-mentioned shortcomings and provide an efficient and economical solution for the warpage assessment of epitaxial materials.

[0040] This invention provides a method for measuring the warpage of epitaxial materials, which can overcome the shortcomings of existing methods for measuring the warpage of epitaxial materials and provide an efficient and economical solution for evaluating the warpage of epitaxial materials. The method for measuring the warpage of epitaxial materials in this invention can be executed by an epitaxial material warpage measuring device in any embodiment of this invention. Figure 1 A flowchart illustrating a method for measuring the warpage of an epitaxial material, as provided in an embodiment of the present invention, is shown below. Figure 1 As shown, the methods for measuring the warpage of epitaxial materials include:

[0041] S110. Divide the epitaxial material into a predetermined number of grid points along the first and second directions, with a predetermined distance between adjacent grid points.

[0042] Specifically, Figure 2 This is a schematic diagram of dividing a grid on an epitaxial material according to an embodiment of the present invention, such as... Figure 2 As shown, the epitaxial material 11 has multiple grid points 12 with equal spacing. The first direction X and the second direction Y are two mutually perpendicular directions. The multiple grid points 12 with equal spacing are arranged in the first direction X and the second direction Y, respectively, with a preset distance between adjacent grid points 12. By dividing the epitaxial material 11 into a preset number of grid points 12, the grid points 12 are distributed at various positions on the epitaxial material 11, so as to measure the height of various positions on the surface of the epitaxial material 11.

[0043] S120. Obtain the height of each grid point on the epitaxial material in the third direction; wherein the first direction, the second direction, and the third direction are perpendicular to each other.

[0044] Specifically, Figure 3 This is a side view of the epitaxial material provided in an embodiment of the present invention, as shown below. Figure 3 As shown, a measuring instrument can be set on the third direction Z of the epitaxial material 11 to measure the height of each grid point 12 on the epitaxial material 11 in the third direction Z. The measuring instrument can be a microscope, an optical interferometer, a laser height meter, or an image measuring instrument. The first direction X and the third direction Z are perpendicular to each other, and the first direction X, the second direction Y, and the third direction Z are perpendicular to each other. The height of each grid point 12 on the epitaxial material 11 in the third direction Z can be obtained by the measuring instrument. In this embodiment of the invention, the measurement process does not require the use of professional warp measurement equipment, but uses various measuring instruments to measure the height of each grid point 12 on the epitaxial material 11 to calculate the warp of the epitaxial material 11, so as to achieve a preliminary measurement of the warp of the epitaxial material 11. The measurement process is convenient and the measurement cost is low.

[0045] S130. Based on the height of each grid point in the third direction, obtain the maximum height, minimum height, and average height of each grid point in the third direction.

[0046] Specifically, the maximum and minimum heights of each grid point in the third direction Z can be selected from the heights of each grid point in the third direction Z. Based on the heights of each grid point in the third direction Z, the average height of each grid point in the third direction Z can be calculated to calculate the warpage of the epitaxial material.

[0047] S140. The warpage of the epitaxial material is calculated based on the relationship between the maximum height, minimum height, and average height.

[0048] Specifically, the existing technology calculates warpage by subtracting the minimum height from the maximum height of the material and then dividing by the material thickness. However, the embodiment of this invention calculates the warpage of the epitaxial material based on the relationship between the maximum height, minimum height, and average height. This differs from the existing warpage calculation method. Furthermore, the embodiment of this invention can use various low-cost devices to measure the height of each grid point on the epitaxial material, thereby achieving a preliminary measurement of the warpage of the epitaxial material. The measurement process is convenient and cost-effective.

[0049] This invention provides a method for measuring the warpage of epitaxial materials. The method includes: dividing the epitaxial material into a predetermined number of grid points along a first direction and a second direction, with a predetermined distance between adjacent grid points, to measure the height of various locations on the surface of the epitaxial material; obtaining the height of each grid point in a third direction, where the first, second, and third directions are perpendicular to each other, making data acquisition relatively easy and allowing measurement of the height of each grid point using various low-cost devices; obtaining the maximum, minimum, and average height of each grid point in the third direction based on its height; and calculating the warpage of the epitaxial material based on the relationship between the maximum, minimum, and average heights, thus achieving a preliminary measurement of the warpage of the epitaxial material. This method is convenient and cost-effective, meeting the needs of epitaxial material R&D and production lines for rapid, low-cost, and convenient preliminary warpage measurement, thereby improving the efficiency of epitaxial material development and device fabrication.

[0050] This invention also provides another method for measuring the warpage of epitaxial materials. Figure 4 A flowchart of another method for measuring the warpage of epitaxial materials provided in an embodiment of the present invention is shown below. Figure 4 As shown, in some embodiments of the present invention, the epitaxial material is circular, and the method for measuring the warpage of the epitaxial material includes:

[0051] S210. Divide the epitaxial material into a predetermined number of grid points along the first and second directions, with a predetermined distance between adjacent grid points.

[0052] In some embodiments of the present invention, the epitaxial material is circular, and a predetermined number of grid points are divided on the epitaxial material, with a predetermined distance between adjacent grid points, including:

[0053] Divide the circular surface of the epitaxial material into a maximum square; divide the maximum square into a preset number of grid points, with a preset distance between adjacent grid points.

[0054] Specifically, such as Figure 2 As shown, when the epitaxial material is circular, a maximum square is divided within the circular surface of the epitaxial material, and a preset number of grid points are divided within the maximum square to measure the warpage of the main application area of ​​the epitaxial material. This ensures that the warpage of the main application area of ​​the epitaxial material can meet the requirements for normal use, thereby maximizing the yield of the epitaxial material and avoiding the impact of the warpage of the edge area of ​​the circular epitaxial material on the yield of the epitaxial material.

[0055] In some embodiments of the present invention, a predetermined number of grid points are divided within the largest square, with a predetermined distance between adjacent grid points, including:

[0056] Divide the largest square into n×n smaller squares of equal area. Set a grid point at the vertex of each smaller square. The interval between adjacent grid points is a preset distance. The preset number is n×n, where n>1 and n is an integer. The side length of the smaller square is the preset distance, and the side length of the largest square is n times the preset distance.

[0057] Specifically, the largest square is divided into n×n smaller squares of equal area. A grid point is set at each vertex of each smaller square to ensure that the interval between adjacent grid points is a preset distance. The preset number of grid points is n×n, where n > 1 and n is an integer. The side length of each smaller square is the preset distance, and the side length of the largest square is n times the preset distance. For example,... Figure 2 As shown, n=4, the preset quantity is 4×4, the side length of the small square is the preset distance, and the side length of the largest square is 4 times the preset distance.

[0058] S220. Obtain the height of each grid point on the epitaxial material in the third direction; wherein the first direction, the second direction, and the third direction are perpendicular to each other.

[0059] S230. Based on the height of each grid point in the third direction, obtain the maximum height, minimum height, and average height of each grid point in the third direction.

[0060] S240. The warpage of the epitaxial material is calculated based on the difference between the maximum height and the average height, and the difference between the minimum height and the average height.

[0061] Specifically, existing technologies typically use the height difference between the highest and lowest points on an object's surface to reflect the object's warp. However, in this embodiment of the invention, the warp of the epitaxial material is reflected by the difference between the maximum and average height, as well as the difference between the minimum and average height. Compared to existing technologies, the warp calculated by the method in this embodiment of the invention is more accurate.

[0062] In some embodiments of the present invention, the warpage of the epitaxial material is calculated based on the difference between the maximum height and the average height, and the difference between the minimum height and the average height, including:

[0063] The warpage of the epitaxial material satisfies:

[0064] Z = |M1-N| + |M2-N|;

[0065] Where Z is the warpage of the epitaxial material, M1 is the maximum height, M2 is the minimum height, and N is the average height.

[0066] Specifically, the warpage Z of the epitaxial material is calculated as the sum of the absolute values ​​of the difference between the maximum height M1 and the average height N, and the absolute values ​​of the difference between the minimum height M2 and the average height N. Using the average height N to calculate the warpage Z can better reflect the warpage of the epitaxial material, thus making the obtained warpage more accurate.

[0067] In some embodiments of the present invention, the epitaxial material includes a thin film material, which is formed by depositing a source material on a substrate via molecular beam epitaxy. Each grid point on the thin film material is located on one side of the deposited source material. Obtaining the height of each grid point on the epitaxial material in a third direction includes:

[0068] Measure and obtain the height of each grid point on the thin film material in the third direction.

[0069] Specifically, the epitaxial material in this embodiment of the invention is a thin film material, which is formed by depositing source material on a substrate via molecular beam epitaxy. Molecular beam epitaxy equipment forms oriented molecular / atomic beams of source material in an ultra-high vacuum environment, precisely depositing them on the substrate surface to achieve atomic-level growth layer by layer, forming an epitaxial wafer, i.e., the thin film material of this embodiment. Epitaxial wafers are widely used in high-end fields such as semiconductors, optoelectronics, and quantum devices. During the growth process of the epitaxial wafer, stress is generated inside the wafer, causing warping. This warping degree is a key parameter for measuring the quality of the epitaxial material. Excessive warping not only affects the yield of subsequent micro-nano processing processes such as photolithography and etching, but also directly changes the band structure of active regions such as quantum wells, ultimately leading to device performance degradation or even failure. In this embodiment of the invention, each grid point on the thin film material is located on the side where the source material is deposited, so as to better reflect the degree of warping on the side where the source material is deposited during the growth of the thin film material, thereby obtaining a more accurate warping result. The method for measuring the warpage of epitaxial materials in this invention can enable more frequent process monitoring, faster R&D iteration, and earlier quality warnings, thereby effectively reducing costs and improving efficiency and product competitiveness.

[0070] In some embodiments of the present invention, the epitaxial material is square, and can be directly divided into n×n small squares of the same area. A grid point is set at the vertex of each small square to ensure that the interval between adjacent grid points is a preset distance. The preset number is n×n, n>1, and n is an integer. The side length of the small square is the preset distance, and the side length of the largest square is n times the preset distance.

[0071] In some embodiments of the present invention, the epitaxial material is elliptical, and a maximum rectangle can be planned within the ellipse. The maximum rectangle is divided into n×m small squares with the same area. A grid point is set at the vertex of each small square to ensure that the interval between adjacent grid points is a preset distance. The preset number is n×m, where m and n are both greater than 1 and are integers. The side length of the small square is the preset distance, the length of the maximum rectangle is n times the preset distance, and the width of the maximum rectangle is m times the preset distance.

[0072] In some embodiments of the present invention, the outer material is a rectangle, and the rectangle is divided into n×m small squares of the same area. A grid point is set at the vertex of each small square to ensure that the interval between adjacent grid points is a preset distance. The preset number is n×m, where m and n are both greater than 1 and m and n are integers. The side length of the small square is the preset distance, the length of the rectangle is n times the preset distance, and the width of the rectangle is m times the preset distance.

[0073] This invention provides a method for measuring the warpage of epitaxial materials. The method includes: dividing the epitaxial material into a predetermined number of grid points along a first direction and a second direction, with a predetermined distance between adjacent grid points, to measure the height of various positions on the surface of the epitaxial material; obtaining the height of each grid point in a third direction, where the first direction, the second direction, and the third direction are perpendicular to each other, making data acquisition relatively easy and allowing measurement of the height of each grid point in the epitaxial material using various low-cost devices; obtaining the maximum, minimum, and average height of each grid point in the third direction based on its height; and calculating the warpage of the epitaxial material based on the relationship between the maximum, minimum, and average heights, thus achieving a preliminary measurement of the warpage of the epitaxial material. The measurement process is convenient and cost-effective.

[0074] This invention also provides a device for measuring the warpage of epitaxial materials. This device is used in any of the above embodiments for measuring the warpage of epitaxial materials. Figure 5 This is a schematic diagram of the structure of a device for measuring the warpage of an epitaxial material according to an embodiment of the present invention, as shown below. Figure 5 As shown, the device for measuring the warpage of epitaxial material includes a control module 110 and a height recognition module 120. The control module 110 is connected to the height recognition module 120. The height recognition module 120 is used to measure the height of each grid point on the epitaxial material in the third direction.

[0075] The control module 110 is used to divide a preset number of grid points on the epitaxial material along the first direction and the second direction, with a preset distance between adjacent grid points; the control module 110 is also used to obtain the height of each grid point on the epitaxial material in the third direction through the height recognition module; wherein, the first direction, the second direction and the third direction are perpendicular to each other; the control module 110 is also used to obtain the maximum height, minimum height and average height of each grid point in the third direction according to the height of each grid point in the third direction, and calculate the warpage of the epitaxial material based on the relationship between the maximum height, minimum height and average height.

[0076] Specifically, the height recognition module 120 serves as a height measurement device. The height recognition module 120 can be a microscope, optical interferometer, laser height meter, or image measuring instrument, etc. It can be used to measure the height of each grid point on the epitaxial material in the third direction Z and send it to the control module 110. There is no need to use professional warp measurement equipment. By measuring the height of each grid point on the epitaxial material through the height recognition module 120, the warp of the epitaxial material can be calculated, so as to achieve a preliminary measurement of the warp of the epitaxial material. The measurement process is convenient and the measurement cost is low. The control module 110 can divide a preset number of grid points on the epitaxial material, with a preset distance between adjacent grid points, so that the height of each grid point on the epitaxial material in the third direction can be obtained by the height recognition module 120. The control module 110 can also obtain the maximum, minimum and average height of each grid point in the third direction based on the height of each grid point in the third direction, and calculate the warpage of the epitaxial material based on the relationship between the maximum, minimum and average heights, so as to realize the preliminary measurement of the warpage of the epitaxial material, thereby meeting the needs of rapid, low-cost and convenient preliminary measurement of warpage in epitaxial material R&D and production lines, and improving the efficiency of epitaxial material development and device fabrication.

[0077] This invention provides a device for measuring the warpage of epitaxial materials. The device includes a control module and a height recognition module, with the control module connected to the height recognition module. The height recognition module is used to measure the height of each grid point on the epitaxial material in a third direction. The control module divides the epitaxial material into a preset number of grid points along the first and second directions, with a preset distance between adjacent grid points, to measure the height of various positions on the epitaxial material surface. It acquires the height of each grid point in the third direction, where the first, second, and third directions are perpendicular to each other, making data acquisition relatively easy. Various low-cost devices can be used to measure the height of each grid point in the third direction. Based on the height of each grid point in the third direction, the maximum, minimum, and average heights of each grid point in the third direction are obtained. The warpage of the epitaxial material is calculated based on the relationship between the maximum, minimum, and average heights, thus achieving a preliminary measurement of the warpage. The measurement process is convenient, cost-effective, and the test results are easily obtainable, meeting the needs of rapid, low-cost, and convenient preliminary warpage measurement in epitaxial material R&D and production lines, thereby improving the efficiency of epitaxial material development and device fabrication. The epitaxial material warpage measurement method in this embodiment can also be extended to other aspects requiring warpage testing, demonstrating good versatility.

[0078] In some embodiments of the present invention, the height recognition module 120 is an optical microscope equipped with a Z-axis grating ruler. The optical microscope is used to measure the height of each grid point on the epitaxial material in the third direction.

[0079] Specifically, optical microscopes equipped with Z-axis grating rulers can directly measure three-dimensional parameters of an object, such as height, depth, flatness, and parallelism, in the third direction Z, in addition to the conventional measurements in the first X and second Y directions. This provides more comprehensive information. Measuring the height of each grid point on the epitaxial material in the third direction Z using an optical microscope can make the measurement data more accurate and improve the reliability of the results.

[0080] In some embodiments of the present invention, the device for measuring the warpage of the epitaxial material further includes a measuring base; the measuring base is used to support the epitaxial material, and the height of each grid point on the epitaxial material in the third direction is the distance between the contact surface between the measuring base and the epitaxial material and the corresponding grid point.

[0081] Specifically, the measuring base can support and place the epitaxial material. The height 0 in the third direction Z is the contact surface between the measuring base and the epitaxial material. Then, the height of each grid point on the epitaxial material in the third direction Z is the distance between the contact surface between the measuring base and the epitaxial material and the corresponding grid point.

[0082] In some embodiments of the present invention, the device for measuring the warpage of the epitaxial material further includes a leveling component disposed on the measuring base, the leveling component being used to level the measuring base.

[0083] Specifically, the leveling component is set on the measuring base. The leveling component can level the measuring base so that the contact surface between the measuring base and the epitaxial material can be used as the height 0 value in the third direction Z. This improves the accuracy of the height of each grid point on the epitaxial material measured by the height recognition module 120 in the third direction Z, making the measurement data more accurate and improving the reliability of the warpage calculation results.

[0084] This invention provides a device for measuring the warpage of epitaxial materials. This device enables preliminary measurement of the warpage of epitaxial materials, ensuring easy access to test results. The measurement process is convenient and cost-effective, meeting the needs of epitaxial material R&D and production lines for rapid, low-cost, and convenient preliminary warpage measurement, thereby improving the efficiency of epitaxial material development and device fabrication. Furthermore, this device can be extended to other applications requiring warpage testing, demonstrating excellent versatility.

[0085] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A method for measuring the warpage of an epitaxial material, characterized in that, The method includes: A predetermined number of grid points are divided on the epitaxial material along the first and second directions, with a predetermined distance between adjacent grid points; The height of each grid point on the epitaxial material in a third direction is obtained; wherein the first direction, the second direction, and the third direction are perpendicular to each other. Based on the height of each grid point in the third direction, the maximum height, minimum height, and average height of each grid point in the third direction are obtained; The warpage of the epitaxial material is calculated based on the relationship between the maximum height, the minimum height, and the average height. The calculation of the warpage of the epitaxial material based on the relationship between the maximum height, the minimum height, and the average height includes: The warpage of the epitaxial material is calculated based on the difference between the maximum height and the average height, and the difference between the minimum height and the average height. The warpage of the epitaxial material is calculated based on the difference between the maximum height and the average height, and the difference between the minimum height and the average height, including: The warpage of the epitaxial material satisfies: Z = |M1-N| + |M2-N|; Where Z is the warpage of the epitaxial material, M1 is the maximum height, M2 is the minimum height, and N is the average height. The epitaxial material is circular, and the process of dividing the epitaxial material into a predetermined number of grid points, with a predetermined distance between adjacent grid points, includes: A maximum square is defined within the circular surface of the epitaxial material; The maximum square is divided into a predetermined number of grid points, with a predetermined distance between adjacent grid points.

2. The method for measuring the warpage of epitaxial materials according to claim 1, characterized in that, Divide the maximum square into a predetermined number of grid points, with adjacent grid points spaced at a predetermined distance, including: Divide the largest square into n×n smaller squares of equal area. Set a grid point at the vertex of each smaller square. The interval between adjacent grid points is the preset distance. The preset number is n×n, n>1, and n is an integer. The side length of each smaller square is the preset distance. The side length of the largest square is n times the preset distance.

3. The method for measuring the warpage of epitaxial materials according to claim 1, characterized in that, The epitaxial material includes a thin film material, which is formed by depositing a source material on a substrate via molecular beam epitaxy. Each grid point on the thin film material is located on one side of the deposited source material. Obtaining the height of each grid point on the epitaxial material in the third direction includes: Measure and obtain the height of each of the grid points on the thin film material in the third direction.

4. A device for measuring the warpage of an epitaxial material, characterized in that, The device for measuring the warpage of the epitaxial material is used to perform the method for measuring the warpage of the epitaxial material according to any one of claims 1-3. The device for measuring the warpage of the epitaxial material includes a control module and a height recognition module, and the control module is connected to the height recognition module. The height recognition module is used to measure the height of each grid point on the epitaxial material in the third direction; The control module is used to divide a preset number of grid points on the epitaxial material along a first direction and a second direction, with a preset distance between adjacent grid points; The control module is further configured to obtain the height of each grid point on the epitaxial material in the third direction through the height recognition module; wherein the first direction, the second direction, and the third direction are perpendicular to each other. The control module is also used to obtain the maximum height, minimum height and average height of each grid point in the third direction according to the height of each grid point in the third direction, and to calculate the warpage of the epitaxial material based on the relationship between the maximum height, the minimum height and the average height. The height recognition module is an optical microscope equipped with a Z-axis grating ruler. The optical microscope is used to measure the height of each grid point on the epitaxial material in the third direction.

5. The device for measuring the warpage of epitaxial materials according to claim 4, characterized in that, It also includes a measuring base; The measuring base is used to support the epitaxial material, and the height of each grid point on the epitaxial material in the third direction is the distance between the contact surface between the measuring base and the epitaxial material and the corresponding grid point.

6. The device for measuring the warpage of epitaxial materials according to claim 5, characterized in that, It also includes a leveling component, which is disposed on the measuring base and is used to level the measuring base.

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