半导体器件及其制造方法

By using a silicon oxynitride composite layer to form a gradually rising field plate in LDMOSFET, the problem of the difficulty in realizing a ramp field plate in actual process is solved, the breakdown voltage and on-resistance of the device are optimized, and a simple fabrication process and good electric field modulation effect are achieved.

CN121665601BActive Publication Date: 2026-07-17CSMC TECH FAB2 CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CSMC TECH FAB2 CO LTD
Filing Date
2024-09-03
Publication Date
2026-07-17

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Abstract

本发明涉及一种半导体器件极其制造方法，所述方法包括：获取形成有源极区、漏极区、栅极及场氧层的晶圆；形成覆盖源极区、漏极区及栅极的刻蚀停止层；在刻蚀停止层上形成氮氧化硅复合层；氮氧化硅复合层从底部到顶部，氮元素对氧元素的比值呈上升趋势；光刻并刻蚀氮氧化硅复合层，形成氮氧化硅场板，刻蚀窗口位于源极区上方和栅极上方并远离漏极区上方，刻蚀采用随氮氧化硅中氮元素对氧元素的比值增大而刻蚀速率上升的刻蚀剂，氮氧化硅场板具有在从源极区指向漏极区的方向上逐渐抬升的形状。本发明的阶梯 / 斜坡场板仅需一步光刻及刻蚀就能形成，制备工序简单。形成的氮氧化硅场板具有良好的RESURF效果，使得器件具有优异的击穿电压和导通电阻数值。
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