LED epitaxial structure with high luminous efficiency and preparation method thereof

Abstract

The invention discloses a high-luminous-efficiency LED epitaxial structure and a preparation method thereof. The LED epitaxial structure comprises a substrate, and a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a composite multi-quantum well luminous layer, an electron blocking layer and a P-type semiconductor layer which are sequentially stacked on the substrate, the composite multi-quantum well light-emitting layer comprises an N-type multi-quantum well light-emitting layer, a mixed multi-quantum well light-emitting layer and a P-type multi-quantum well light-emitting layer which are sequentially stacked and grown from bottom to top; the second mixed quantum barrier layer comprises a first non-doped GaN layer, a first AlGaN layer and a first Mg-doped AlGaInN layer which are sequentially stacked and grown from bottom to top; and the P-type quantum barrier layer comprises a second non-doped GaN layer, a second AlGaN layer, a second Mg-doped AlGaInN layer, a third AlGaN layer and a third non-doped GaN layer which are sequentially stacked and grown from bottom to top. The invention aims to solve the technical problems that in the prior art, the improvement of hole injection efficiency is limited, cross-regional active hole injection and accurate regulation are difficult to realize, and the luminous efficiency is limited due to single Si doping and component gradual change design.

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