Multi-wavelength LED device

Abstract

The invention provides a multi-wavelength LED device. The multi-wavelength LED device comprises a top cover embedded with a circular light emitting cover, a base matched with the top cover, a plurality of mutually isolated pin groups embedded into the base, and a refrigeration assembly for isolating the pin groups, each pin group comprises an anode pin and a cathode pin, an LED bare chip is arranged on the top surface, facing the light emitting cover, of the anode pin or the cathode pin, and the LED bare chip is connected to the cathode pin or the anode pin belonging to the same pin group through a bonding wire; the refrigeration assembly comprises a semiconductor refrigeration sheet and a plurality of heat conduction fins which are laterally and symmetrically arranged in a protruding mode, the heat conduction fins extend into the adjacent pin sets and abut against the bottoms of pin thinning sections transversely formed by the positive electrode pins or the negative electrode pins respectively, and a plurality of pin hollowed-out parts which allow the pin sets to be embedded in and protrude out of the base are formed in the base. According to the multi-wavelength LED device, the precision control and the light emitting stability of different wavelengths are ensured, and the service life of the multi-wavelength LED device can be remarkably prolonged.

Description

Technical Field

[0001] This invention relates to the field of LED device technology, and in particular to a multi-wavelength LED device. Background Technology

[0002] Existing LED packaging technologies include surface-mount devices (SMD) based LEDs and chip-on-board (COB) based LEDs. SMD-based LEDs fix the bare LED chip onto a substrate, connect the chip to the substrate with metal wires for conductivity and heat dissipation, and seal and protect the entire package with epoxy resin. LEDs using this packaging process typically have a small package size and relatively narrow heat dissipation channels. The heat generated by the LED chip during operation is difficult to dissipate effectively, leading to significant light decay and shortening the LED's lifespan. Furthermore, temperature fluctuations severely affect the LED's color stability, causing color shifts and impacting display quality. COB-based LEDs, on the other hand, are a chip-on-board packaging technology. The COB process first applies thermally conductive epoxy resin to the substrate surface, covering the mounting points of the bare LED chip. Then, the bare LED chip is fixed to the substrate using adhesives or solder, and electrical connections between the chip and the substrate are achieved using wires (e.g., gold or copper wires). This type of LED packaging process has high requirements for the arrangement of LED bare chips, die bonding and wire bonding processes. Defects in any of the aforementioned processes (such as the arrangement of LED bare chips not meeting design requirements) will lead to LED performance and yield, and the heat dissipation effect will not be ideal, and the lifespan of the LED will be affected. Especially in the technical scenario of packaging multiple LED bare chips at the same time and emitting multiple LEDs of different wavelengths and colors at the same time, technical problems such as color deviation and uneven emission color will still occur.

[0003] In view of this, it is necessary to improve the packaging technology of existing LED devices to solve the above problems. It should be noted that the above description of the background technology is only for the purpose of clearly and completely explaining the technical solutions of this application and facilitating understanding by those skilled in the art. It should not be assumed that these solutions are known to those skilled in the art simply because they have been described in the background section of this application. Summary of the Invention

[0004] The purpose of this invention is to disclose a multi-wavelength LED device to improve the heat dissipation efficiency of the LED device and thus extend its service life, while simultaneously improving the wavelength accuracy control and stability of the LED device when generating different colors at multiple wavelengths.

[0005] To achieve the above objectives, the present invention provides a multi-wavelength LED device, comprising: A top cover with a circular light-emitting cover, a base adapted to the top cover, a plurality of mutually isolated pin groups embedded in the base, and a cooling component that isolates the pin groups. The pin group includes a positive pin and a negative pin. The positive pin or the negative pin is provided with a bare LED chip facing the top surface of the light-emitting mask. The bare LED chip is connected to the negative pin or the positive pin belonging to the same pin group through bonding wires. The cooling assembly includes a semiconductor cooling chip horizontally positioned between the positive and negative leads, and several heat-conducting fins symmetrically protruding laterally. The heat-conducting fins extend into adjacent lead groups and abut against the bottom of the lead thinning sections formed laterally by the positive or negative leads respectively. The base forms several lead cutouts for the lead groups to be embedded in and protrude from the base.

[0006] As a further improvement of the present invention, the positive electrode pin and the negative electrode pin are made of copper as a whole, and the surface is coated with niobium-zirconium alloy by electroplating; the top cover and the base are made of carbon nanotubes.

[0007] As a further improvement of the present invention, the positive electrode pin and the negative electrode pin are respectively provided with mutually isolated lateral flanges, and the lateral flanges abut against the top of the cooling component.

[0008] As a further improvement of the present invention, the base includes a base sidewall and a base bottom plate. The base bottom plate forms two rows of ribs surrounding the pin group on the side facing the LED bare chip. The bottom of the ribs forms pin cutouts for the pin group to pass through the base bottom plate, so that the base forms two rows of pin cutouts. An annular step is formed on the inner side of the base sidewall. The annular step is flush with the ribs, and the transverse flange abuts against the annular step. The cooling component is completely attached to the base bottom plate.

[0009] As a further improvement of the present invention, a positive electrode pin and a negative electrode pin of the semiconductor refrigeration chip are formed on the side of the base plate near the base plate. The base plate forms a positive electrode cutout portion of the semiconductor refrigeration chip for the positive electrode pin of the semiconductor refrigeration chip to pass through the base plate, and a negative electrode cutout portion of the semiconductor refrigeration chip for the negative electrode pin of the semiconductor refrigeration chip to pass through the base plate. The positive electrode pin, the negative electrode pin of the semiconductor refrigeration chip, the positive electrode pin and the negative electrode pin are flush and all form a flat welding surface located on the same plane.

[0010] As a further improvement of the present invention, a strip-shaped receiving area for embedding the semiconductor cooling chip is formed between the two rows of pin cutouts, and a lateral receiving area connecting the strip-shaped receiving area is formed between adjacent ribs on the same side. The lateral receiving area accommodates the heat-conducting fins, and the semiconductor cooling chip and the negative and positive pins of the same pin group are kept laterally separated.

[0011] As a further improvement of the present invention, the width of the heat-conducting fins is equal to the width between two adjacent positive electrode pins on the same side or between two adjacent negative electrode pins on the same side.

[0012] As a further improvement of the present invention, the base plate forms ventilation and heat dissipation holes, which are formed between the positive electrode hollow portion and the negative electrode hollow portion of the cooling chip.

[0013] As a further improvement of the present invention, the multi-wavelength LED device includes: A first pin group consisting of a first positive pin and a first negative pin, a second pin group consisting of a second positive pin and a second negative pin, a third pin group consisting of a third positive pin and a third negative pin, and a fourth pin group consisting of a fourth positive pin and a fourth negative pin. The first positive pin is configured to emit red light as a first bare LED chip, the second positive pin is configured to emit yellow light as a second bare LED chip, the third positive pin is configured to emit green light as a third bare LED chip, and the fourth positive pin is configured to emit near-infrared light as a fourth bare LED chip.

[0014] As a further improvement of the present invention, the first LED bare chip, the second LED bare chip, the third LED bare chip and the fourth LED bare chip are respectively soldered to the first positive electrode pin, the second positive electrode pin, the third positive electrode pin and the fourth positive electrode pin using a flip-chip soldering process.

[0015] Compared with the prior art, the beneficial effects of the present invention are: The multi-wavelength LED device disclosed in this invention contains multiple bare LED chips that are independently controlled by multiple pin groups, effectively avoiding LED temperature drift. This ensures that light of different colors with different wavelengths can maintain stable output, thereby ensuring precise control and luminous stability of different wavelengths. At the same time, since the bare LED chips emitting different wavelengths in this multi-wavelength LED device can be independently controlled, multi-color mixing luminous effects are achieved. Finally, by setting a cooling component to isolate the pin groups, the temperature of the bare LED chips during operation can be significantly reduced, thereby improving the heat dissipation efficiency of the bare LED chips and significantly increasing the service life of the multi-wavelength LED device. Attached Figure Description

[0016] Figure 1 This is a perspective view of a multi-wavelength LED device of the present invention from one viewing angle; Figure 2 This is a perspective view of a multi-wavelength LED device according to the present invention from another angle; Figure 3 This is an exploded view of a multi-wavelength LED device according to the present invention; Figure 4 This is a perspective view of the cooling component included in a multi-wavelength LED device according to the present invention; Figure 5 for Figure 4 A bottom view of the central cooling unit; Figure 6 This is a top view of a multi-wavelength LED device according to the present invention; Figure 7 For along Figure 6 Sectional view along the middle AA direction; Figure 8 For along Figure 6 Sectional view along the BB direction; Figure 9 This is a perspective view taken from below, showing the assembled LED chipset and cooling components included in this invention. Figure 10 This is a top view of the assembled LED chipset and cooling components included in this invention; Figure 11 for Figure 10 A cross-sectional view along the CC direction; Figure 12 This is a perspective view of the base included in a multi-wavelength LED device according to the present invention. Detailed Implementation

[0017] The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. However, it should be noted that these embodiments are not intended to limit the present invention. Equivalent changes or substitutions in function, method, or structure made by those skilled in the art based on these embodiments are all within the scope of protection of the present invention.

[0018] like Figures 1 to 12 As shown, this application discloses a specific embodiment of a multi-wavelength LED device 100.

[0019] A multi-wavelength LED device 100 includes: a top cover 20 with a circular light-emitting cover 10 embedded therein; a base 30 adapted to the top cover 20; a plurality of mutually isolated pin groups embedded in the base 30; and a cooling assembly 50 for isolating the pin groups. Each pin group includes a positive pin and a negative pin. A bare LED chip is disposed on either the positive or negative pin facing the top surface of the light-emitting cover 10. The bare LED chip is connected to the negative or positive pin belonging to the same pin group via bonding wires. The light-emitting cover 10 covers all the bare LED chips when viewed from above, ensuring that light emitted by each bare LED chip can exit from the light-emitting cover 10.

[0020] like Figure 1 , Figure 3 and Figure 6 As shown, the top cover 20 and the base 30 are approximately square when viewed from above. The top cover 20 forms an annular inclined surface 202, and a mounting hole 201 for receiving the light emitter mask 10 is formed at the center of the annular inclined surface 202. The bottom of the light emitter mask 10 forms an annular inclined portion 101 that matches the mounting hole 201, and the annular inclined portion 101 fits against the annular inclined surface 202.

[0021] The cooling assembly 50 includes a semiconductor cooling chip 51 horizontally positioned between the positive and negative electrode pins, and several laterally symmetrically protruding heat-conducting fins 52. For example... Figure 11 As shown, the heat-conducting fins 52 extend into adjacent pin groups and abut against the bottom of the pin thinning sections 440 formed laterally by the positive or negative pins, respectively. This allows all the heat generated during LED chip operation to be rapidly conducted to the thermoelectric cooler 51 through the pin thinning sections 440, significantly improving the cooling effect of the thermoelectric cooler 51 on the LED chip and enabling the heat generated during LED chip operation to be transferred to the thermoelectric cooler 51 via a shorter conduction path. The base 30 forms several pin cutouts for pin groups to be embedded in and protrude from the base 30. Figure 4 and Figure 5 As shown, the semiconductor cooling chip 51 has three heat-conducting fins 52 extending laterally from both sides, for a total of six heat-conducting fins 52. The semiconductor cooling chip 51 cools based on the Peltier effect. Simultaneously, this application also uses several heat-conducting fins 52 spaced apart between the pin groups, allowing heat from the four pin groups to be directly conducted to the heat-conducting fins 52, thereby further reducing the heat generated during LED chip operation. It should be noted that the heat-conducting fins 52 are non-conductive, isolating the four pin groups and simultaneously isolating two adjacent positive pins or two adjacent negative pins in the same row. Alternatively, the aforementioned multiple heat-conducting fins 52 can also be considered part of the semiconductor cooling chip 51 and can also cool based on the Peltier effect.

[0022] Specifically, in this embodiment, each pin group includes a positive pin and a negative pin. The positive pin and the negative pin are entirely made of copper to ensure good thermal conductivity, electrical conductivity, and mechanical processing performance for the positive and negative pins. The surfaces of the positive pin and the negative pin are formed with a niobium-zirconium alloy coating through electroplating. Optionally, the thickness of the niobium-zirconium alloy coating can be 2 to 50 micrometers, such as various thicknesses like 2 micrometers, 10 micrometers, 20 micrometers, 50 micrometers, etc. Thus, the mechanical properties of the positive pin and the negative pin are further improved through the niobium-zirconium alloy coating, and it has the advantage of being easy to weld with the PCB board. The top cover 20 and the base 30 are made of carbon nanotubes. The carbon atoms inside the carbon nanotubes are connected by covalent bonds, having an extremely low internal resistance. Compared with conventional ceramic or metal packaging materials, the top cover 20 and the base 30 of the multi-wavelength LED device 100 disclosed in this embodiment, being made of carbon nanotubes, enable a large amount of heat generated when the LED bare chip operates to be quickly absorbed by the top cover 20 and the base 30 and conducted to the outside, preventing the LED bare chip from having too high chip temperature due to heat accumulation, thereby maintaining the temperature required for the LED bare chip to be in a stable operating state. In addition, carbon nanotubes also have many advantages such as high structural strength and stable chemical structure, which can keep the multiple LED bare chips encapsulated inside the multi-wavelength LED device 100 from being affected by high temperature, can withstand a relatively high temperature, and can further prevent the top cover 20 and the base 30 from undergoing structural deformation due to temperature rise.

[0023] The positive pin and the negative pin are respectively provided with mutually isolated lateral flanges, and the lateral flanges abut above the refrigeration component 50. Specifically, this embodiment includes lateral flange 41, lateral flange 42, lateral flange 43, lateral flange 44, lateral flange 45, lateral flange 46, lateral flange 47, and lateral flange 48 (hereinafter simply referred to as "lateral flanges").

[0024] See Figure 2 , Figure 3 and Figure 12As shown, the base 30 includes a base sidewall 31 and a base plate 34. The base plate 34 has two rows of ribs 35 surrounding the pin group on the side facing the LED bare chip. The bottom of the ribs 35 forms pin cutouts for the pin group to pass through the base plate 34, thus forming two rows of pin cutouts from the base 30. Specifically, the first row of pin cutouts includes pin cutouts 301, 303, 305, and 307, and the second row includes pin cutouts 302, 304, 306, and 308. A strip-shaped receiving area 32 for embedding the semiconductor cooling chip 51 is formed between the two rows of pin cutouts. A lateral receiving area connecting the strip-shaped receiving area 32 is formed between adjacent ribs 35 on the same side. The lateral receiving area accommodates the heat-conducting fins 52. The semiconductor cooling chip 51 and the negative and positive pins of the same pin group are kept laterally separated. The width of the heat-conducting fin 52 is equal to the width between two adjacent positive pins on the same side or between two adjacent negative pins on the same side.

[0025] Specifically, two rows of independent ribs 35 and the base sidewall 31 together enclose two rows of bottom-forming pin cutout portions 301-308. Optionally, pin cutout portions 301, 303, 305, and 307 respectively accommodate the first positive pin 411, the second positive pin 413, the third positive pin 415, and the fourth positive pin 417, and serve as the first row of pin cutout portions; another row of independent ribs 35 and the base sidewall 31 together enclose pin cutout portions 302, 304, 306, and 308, respectively, to accommodate the first negative pin 412, the second negative pin 414, the third negative pin 416, and the fourth negative pin 418. The first positive pin 411, the second positive pin 413, the third positive pin 415, and the fourth positive pin 417, as well as the first negative pin 412, the second negative pin 414, the third negative pin 416, and the fourth negative pin 418, all protrude from the bottom surface of the base 30. For example... Figure 12As shown, a lateral receiving region 311 for receiving heat-conducting fins 52 is formed between the rib wall 35 of the pin-cut portion 301 and the rib wall 35 of the pin-cut portion 303; a lateral receiving region 313 for receiving heat-conducting fins 52 is formed between the rib wall 35 of the pin-cut portion 303 and the rib wall 35 of the pin-cut portion 305; and a lateral receiving region 315 for receiving heat-conducting fins 52 is formed between the rib wall 35 of the pin-cut portion 305 and the rib wall 35 of the pin-cut portion 307. The lateral receiving regions 311, 313, and 315 are arranged in a row to respectively receive three heat-conducting fins 52 located on one side of the semiconductor cooling chip 51. Similarly, a lateral receiving region 312 for receiving heat-conducting fins 52 is formed between the rib wall 35 of the pin-cut portion 302 and the rib wall 35 of the pin-cut portion 304; a lateral receiving region 314 for receiving heat-conducting fins 52 is formed between the rib wall 35 of the pin-cut portion 304 and the rib wall 35 of the pin-cut portion 306; and a lateral receiving region 316 for receiving heat-conducting fins 52 is formed between the rib wall 35 of the pin-cut portion 306 and the rib wall 35 of the pin-cut portion 308. The lateral receiving regions 312, 314, and 316 form another row to respectively receive three heat-conducting fins 52 located on the other side of the semiconductor cooling chip 51.

[0026] Optionally, in the multi-wavelength LED device 100 disclosed in this embodiment, a first pin group is formed by a first positive pin 411 and a first negative pin 412, a second pin group is formed by a second positive pin 413 and a second negative pin 414, a third pin group is formed by a third positive pin 415 and a third negative pin 416, and a fourth pin group is formed by a fourth positive pin 417 and a fourth negative pin 418. The first positive pin 411 is configured to provide a first LED bare chip 401 that emits red light (e.g., visible light with a wavelength of 650nm), the second positive pin 413 is configured to provide a second LED bare chip 403 that emits yellow light (e.g., visible light with a wavelength of 590nm), the third positive pin 415 is configured to provide a third LED bare chip 405 that emits green light (e.g., visible light with a wavelength of 510nm), and the fourth positive pin 417 is configured to provide a fourth LED bare chip 407 that emits near-infrared light (IR, e.g., invisible light with a wavelength of 850nm). The first pin group provides an independent DC power supply circuit for the first bare LED chip 401, the second pin group provides an independent DC power supply circuit for the second bare LED chip 403, the third pin group provides an independent DC power supply circuit for the third bare LED chip 405, and the fourth pin group provides an independent DC power supply circuit for the fourth bare LED chip 407. Any one or more of the first, second, third, and fourth bare LED chips 401, 403, 405, and 407 can operate individually or simultaneously to achieve multi-color mixing lighting effects and improve the wavelength control accuracy of the LED device for different colors at multiple wavelengths.

[0027] The first LED bare chip 401 is flip-chip soldered to the first positive pin 411 near the top of the light-emitting mask 10, and connected to the first negative pin 412 via a bonding wire 402. The first positive pin 411 and the first negative pin 412 are respectively soldered to solder joints on the PCB board to form a circuit. The second LED bare chip 403 is flip-chip soldered to the second positive pin 413 near the top of the light-emitting mask 10, and connected to the second negative pin 414 via a bonding wire 404. The second positive pin 413 and the second negative pin 414 are respectively soldered to solder joints on the PCB board to form a circuit. The third LED bare chip 405 is flip-chip soldered to the third positive pin 415 near the top of the light-emitting mask 10, and connected to the third negative pin 416 via a bonding wire 406. The third positive pin 415 and the third negative pin 416 are respectively soldered to solder joints on the PCB board to form a circuit. The fourth bare LED chip 407 is flip-chip soldered to the fourth positive pin 417 near the top of the light-emitting mask 10, and connected to the fourth negative pin 418 via bonding wire 408. The fourth positive pin 417 and the fourth negative pin 418 are respectively soldered to the solder joints on the PCB board to form a circuit.

[0028] like Figure 2 , Figure 7 , Figure 8 and Figure 12 As shown, in this embodiment, the base plate 34 forms a ventilation and heat dissipation hole 301, which is formed between the positive electrode cutout portion 330 and the negative electrode cutout portion 340 of the cooling chip. The ventilation and heat dissipation hole 301 is designed to dissipate the heat generated by the multiple bare LED chips encapsulated between the top cover 20 and the base 30, thereby further reducing the temperature of each bare LED chip during operation and preventing heat accumulation. The positive electrode cutout portion 330 allows the positive electrode lead 531 of the semiconductor cooling chip to pass through and protrude from the bottom surface of the base 30, and the negative electrode cutout portion 340 allows the negative electrode lead 532 of the semiconductor cooling chip to pass through and protrude from the bottom surface of the base 30.

[0029] Combination Figure 10 As shown, a transverse flange 41 is formed on the side of the first positive electrode pin 411 near the light emitter 10; a transverse flange 43 is formed on the side of the second positive electrode pin 413 near the light emitter 10; a transverse flange 45 is formed on the side of the first positive electrode pin 415 near the light emitter 10; a transverse flange 47 is formed on the side of the first positive electrode pin 417 near the light emitter 10; a transverse flange 42 is formed on the side of the first negative electrode pin 4127 near the light emitter 10; a transverse flange 44 is formed on the side of the second negative electrode pin 414 near the light emitter 10; a transverse flange 46 is formed on the side of the third negative electrode pin 416 near the light emitter 10; and a transverse flange 48 is formed on the side of the fourth negative electrode pin 418 near the light emitter 10. It should be noted that the aforementioned transverse flanges 41-48 are preferably transversely arranged around the three sides of each positive and negative pin, and the sides opposite to the positive and negative pins in the same pin group may not be provided with the aforementioned transverse flanges, but it is necessary to maintain the separation between the positive and negative pins. Figure 10 In the design, a gap 60 is formed between the cooling component 50 and the same pin group along the top view angle. This facilitates airflow within the multi-wavelength LED device 100, and ultimately dissipates heat through the ventilation and heat dissipation holes 301. Figure 10 and Figure 11As shown, in this embodiment, the width of the thermoelectric cooler 51 is greater than the width of the positive electrode pin 531 and the negative electrode pin 532 of the thermoelectric cooler, so as to form lateral gaps 510 and 520 between the positive and negative electrode pins in the pin group for soldering the bare LED chip. A pin gap 400 is formed between the pin thinning section 440 and another negative electrode pin (or positive electrode pin) in the same pin group. The pin gap 400 communicates with the lateral gap 520 (or lateral gap 510) to facilitate the airflow within the shielding space formed by the top cover 20 and the base 30, thereby facilitating the cooling of the bare LED chip.

[0030] Optionally, in this embodiment, the first LED bare chip 401, the second LED bare chip 403, the third LED bare chip 405, and the fourth LED bare chip 407 are respectively soldered to the first positive electrode pin 411, the second positive electrode pin 413, the third positive electrode pin 415, and the fourth positive electrode pin 417 using a flip-chip bonding process. The flip-chip bonding process can maintain stable current transmission for each LED bare chip, which helps reduce resistance loss, provides higher heat dissipation efficiency, and enables small-size packaging. Specifically, the multi-wavelength LED device 100 disclosed in this embodiment can have a packaged length of 5mm, a width of 5mm, and a height of 2.1mm, offering the advantage of a small packaged size.

[0031] An annular step 33 is formed on the inner side of the base sidewall 31. The annular step 33 is flush with the rib wall 35, and the transverse flanges 41-48 abut against the annular step 33. The cooling component 50 is completely fitted with the base plate 34. The annular step 33 abuts against the lower edge of all the transverse flanges 41-48. The side of the thermoelectric cooler 51 near the base plate 34 forms a positive electrode pin 531 and a negative electrode pin 532. The base plate 34 forms a positive electrode cutout 330 for the positive electrode pin 531 to pass through the base plate 34, and a negative electrode cutout 340 for the negative electrode pin 532 to pass through the base plate 34. The positive electrode pin 531, the negative electrode pin 532, the positive electrode pins (i.e., the first positive electrode pin 411, the second positive electrode pin 413, the third positive electrode pin 415 and the fourth positive electrode pin 417) and the negative electrode pins (i.e., the first negative electrode pin 412, the second negative electrode pin 414, the third negative electrode pin 416 and the fourth negative electrode pin 418) of the semiconductor cooling chip are flush with each other and form a flat soldering surface (not marked) located on the same plane. The soldering surface is parallel to the surface of the corresponding solder point on the PCB board to ensure that it remains in contact after being soldered to the PCB board.

[0032] The detailed descriptions listed above are merely specific descriptions of feasible embodiments of the present invention, and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.

[0033] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A multi-wavelength LED device, characterized in that, include: A top cover with a circular light-emitting cover, a base adapted to the top cover, a plurality of mutually isolated pin groups embedded in the base, and a cooling component that isolates the pin groups. The pin group includes a positive pin and a negative pin. The positive pin or the negative pin is provided with a bare LED chip facing the top surface of the light-emitting mask. The bare LED chip is connected to the negative pin or the positive pin belonging to the same pin group through bonding wires. The cooling assembly includes a semiconductor cooling chip horizontally positioned between the positive and negative leads, and several heat-conducting fins symmetrically protruding laterally. The heat-conducting fins extend into adjacent lead groups and abut against the bottom of the lead thinning sections formed laterally by the positive or negative leads respectively. The base forms several lead cutouts for the lead groups to be embedded in and protrude from the base.

2. The multi-wavelength LED device according to claim 1, characterized in that, The positive and negative leads are made entirely of copper, and the surface is coated with a niobium-zirconium alloy by electroplating; the top cover and the base are made of carbon nanotubes.

3. The multi-wavelength LED device according to claim 1, characterized in that, The positive electrode pin and the negative electrode pin are respectively provided with mutually isolated lateral flanges, and the lateral flanges abut against the top of the cooling component.

4. The multi-wavelength LED device according to claim 1, characterized in that, The base includes a base sidewall and a base plate. The base plate has two rows of ribs surrounding the pin group on the side facing the LED bare chip. The bottom of the ribs has pin cutouts for the pin group to pass through the base plate, so that the base forms two rows of pin cutouts. An annular step is formed on the inner side of the base sidewall. The annular step is flush with the ribs, and the transverse flange abuts against the annular step. The cooling component is completely attached to the base plate.

5. The multi-wavelength LED device according to claim 4, characterized in that, The semiconductor refrigeration chip has a positive electrode pin and a negative electrode pin on the side near the base plate. The base plate has a positive electrode cutout for the positive electrode pin to pass through it, and a negative electrode cutout for the negative electrode pin to pass through it. The positive electrode pin, negative electrode pin, and positive and negative electrode pins are flush and form flat welding surfaces on the same plane.

6. The multi-wavelength LED device according to claim 5, characterized in that, A strip-shaped receiving area is formed between the two rows of pin cutouts for embedding the semiconductor cooling chip. A lateral receiving area is formed between adjacent ribs on the same side, connecting the strip-shaped receiving area. The lateral receiving area accommodates the heat-conducting fins. The semiconductor cooling chip and the negative and positive pins of the same pin group are kept laterally separated.

7. The multi-wavelength LED device according to claim 6, characterized in that, The width of the heat-conducting fins is equal to the width between two adjacent positive pins on the same side or between two adjacent negative pins on the same side.

8. The multi-wavelength LED device according to claim 5, characterized in that, The base plate forms ventilation and heat dissipation holes, which are formed between the positive electrode cutout of the cooling chip and the negative electrode cutout of the cooling chip.

9. The multi-wavelength LED device according to any one of claims 1 to 8, characterized in that, The multi-wavelength LED device includes: A first pin group consisting of a first positive pin and a first negative pin, a second pin group consisting of a second positive pin and a second negative pin, a third pin group consisting of a third positive pin and a third negative pin, and a fourth pin group consisting of a fourth positive pin and a fourth negative pin. The first positive pin is configured to emit red light as a first bare LED chip, the second positive pin is configured to emit yellow light as a second bare LED chip, the third positive pin is configured to emit green light as a third bare LED chip, and the fourth positive pin is configured to emit near-infrared light as a fourth bare LED chip.

10. The multi-wavelength LED device according to claim 9, characterized in that, The first LED bare chip, the second LED bare chip, the third LED bare chip and the fourth LED bare chip are respectively soldered to the first positive electrode pin, the second positive electrode pin, the third positive electrode pin and the fourth positive electrode pin using a flip-chip soldering process.

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