Cleaning method of large-size silicon carbide seed crystals
CN121665940APending Publication Date: 2026-03-13BEIJING TIANKE HEDA SEMICON CO LTD +1
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Patent Information
- Application Number
- CN202511954082.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-23
- Publication Date
- 2026-03-13
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Figure CN121665940A_ABST
Abstract
The invention discloses a cleaning method for large-size silicon carbide seed crystals. The cleaning method comprises the steps that the large-size seed crystals are subjected to throwing cleaning in a first mixed solution, high-temperature pure water dynamic cleaning, second-time throwing cleaning in a second mixed solution, normal-temperature pure water dynamic cleaning and storage. According to the cleaning method for the large-size silicon carbide seed crystal, the silicon carbide seed crystal can be effectively cleaned, fiber impurities and large particles on the surface of the silicon carbide seed crystal can be effectively cleaned, the proportion of defects such as liquid medicine smudginess, oil stains, edge breakage, scratching and particles of the cleaned silicon carbide seed crystal is obviously reduced, the defective rate can be effectively reduced, and the production efficiency is improved. And the quality of silicon carbide single crystals and devices is ensured.
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