Semiconductor device and method for forming the same

Abstract

A semiconductor device includes a substrate, an active gate structure, a dummy gate structure, and a storage node. The substrate comprises an active area and an isolation structure surrounding the active area, the isolation structure is of a double-layer structure, and the average dielectric constant of the isolation structure is smaller than 3.9. The active gate structure is disposed in the active region, and the dummy gate structure is disposed in the isolation structure. The storage node is disposed between the active gate structure and the dummy gate structure. A method of forming a semiconductor device is also disclosed herein. The isolation structure is directly inserted between the dummy gate structure and the storage node, and the average dielectric constant of the isolation structure is less than 3.9, so that the capacitance value between the dummy gate structure and the storage node is reduced, and the GIDL is also improved.

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