Solar cells and their manufacturing methods, photovoltaic modules

Abstract

This application relates to a solar cell and its manufacturing method, as well as a photovoltaic module. The manufacturing method includes: providing a substrate, a first surface including alternating first regions and non-first regions arranged in a first direction, the non-first regions including a spacer region and a second region, the spacer region being located between adjacent first and second regions; forming a first mask layer on the first surface, and at least removing the first mask layer corresponding to the first region; forming a first passivation contact layer on the side of the first region and the first mask layer away from the second surface, and at least removing the first passivation contact layer and the first mask layer corresponding to the non-first region, the first region and the second region being located on the same first plane, the first plane being parallel to the plane on which the substrate is located; forming a second passivation contact layer on the side of the first passivation contact layer and the non-first region away from the second surface, and at least removing the second passivation contact layer corresponding to the first region and the spacer region. This application can improve the performance of solar cells.

Description

Technical Field

[0001] This application relates to the field of solar cell manufacturing technology, and in particular to a solar cell and its manufacturing method, and a photovoltaic module. Background Technology

[0002] Solar energy, as an emerging energy source, has advantages over traditional fossil fuels in many aspects, including inexhaustibility, cleanliness, and environmental friendliness. Currently, a major method of utilizing solar energy is through solar cell modules that convert received light energy into electrical energy. These modules can be large-area solar panels formed by connecting several solar cells (or photovoltaic cells, or photovoltaic modules) in series, encapsulating them, and arranging them in an array. When a solar cell absorbs light energy, opposite charges accumulate at its terminals, generating a "photovoltaic voltage," also known as the "photovoltaic effect." Under the influence of the photovoltaic effect, an electromotive force is generated at the terminals of the solar cell, thus converting light energy into electrical energy.

[0003] However, the performance of solar cells in related technologies still needs to be improved. Summary of the Invention

[0004] Therefore, it is necessary to address the issue of how to improve the performance of solar cells in related technologies by providing a solar cell, its manufacturing method, a tandem cell, and a photovoltaic module.

[0005] In a first aspect, this application provides a method for manufacturing a solar cell, comprising:

[0006] A substrate is provided, the substrate having a first surface and a second surface disposed opposite to each other, the first surface including a first region and a non-first region disposed alternately in a first direction, the non-first region including a spacer region and a second region, the spacer region being located between adjacent first regions and second regions;

[0007] A first mask layer is formed on the first surface, and at least the first mask layer corresponding to the first region is removed;

[0008] A first passivation contact layer is formed on the side of the first region and the first mask layer away from the second surface, and at least the first passivation contact layer and the first mask layer corresponding to the non-first region are removed. The first region and the second region are located on the same first plane, and the first plane is parallel to the plane where the substrate is located.

[0009] A second passivation contact layer is formed on the side of the first passivation contact layer and the non-first region away from the second surface, and at least the second passivation contact layer corresponding to the first region and the interval region is removed, wherein the doping types of the doping elements in the first passivation contact layer and the second passivation contact layer are different.

[0010] In some embodiments, the step of at least removing the first mask layer corresponding to the first region further includes: removing a portion of the substrate of a first thickness at the first region;

[0011] The step of removing at least the first passivation contact layer and the first mask layer corresponding to the non-first region further includes: removing a portion of the substrate of second thickness at the non-first region.

[0012] In some embodiments, the first thickness is 2μm-6μm, and the second thickness is 2μm-6μm; and / or,

[0013] The first thickness is equal to the second thickness.

[0014] In some embodiments, the step of at least removing the first mask layer corresponding to the first region includes: removing the first mask layer corresponding to the first region by using a first laser; the step of removing the portion of the substrate of the first thickness at the first region includes removing the portion of the substrate of the first thickness at the first region by using a first wet cleaning process; and / or,

[0015] The step of removing at least the first passivation contact layer and the first mask layer corresponding to the non-first region includes: removing the first passivation contact layer and the first mask layer corresponding to the non-first region by using a second laser; the step of removing the portion of the substrate of the second thickness in the non-first region includes removing the portion of the substrate of the second thickness in the non-first region by using a second wet cleaning process.

[0016] In some embodiments, between the step of forming a first mask layer on the first surface and the step of at least removing the first mask layer corresponding to the first region, the method of manufacturing the solar cell further includes:

[0017] A first microstructure is formed on the second surface;

[0018] A second mask layer is formed on the second surface.

[0019] In some embodiments, after the step of removing at least the second passivation contact layer corresponding to the first region and the spacing region, the method of manufacturing the solar cell further includes:

[0020] Remove the second mask layer from the second surface.

[0021] In some embodiments, after the step of removing the second mask layer from the second surface, the method of manufacturing the solar cell further includes:

[0022] A second microstructure is formed on the first surface and the second surface;

[0023] The first microstructure and the second microstructure have a first height and a second height in the second direction, respectively. The first microstructure and the second microstructure have a first width and a second width in the third direction, respectively. The second direction is perpendicular to the plane where the second surface is located, and the third direction is parallel to the plane where the second surface is located.

[0024] The first height of the first microstructure is greater than the second height of the second microstructure, and the first width of the first microstructure is greater than the second width of the second microstructure.

[0025] In some embodiments, the first height of the first microstructure is 0.8 μm-1.1 μm, and the first width of the first microstructure is 1 μm-1.3 μm; and / or,

[0026] The second height of the second microstructure is 0.1 μm-0.3 μm, and the second width of the second microstructure is 0.1 μm-0.5 μm; and / or,

[0027] The plurality of the first microstructures include at least one of an upright pyramid, an inverted pyramid, and / or,

[0028] The plurality of the second microstructures include at least one of irregular protrusions and depressions.

[0029] In some embodiments, the width of the interval region is 0; or,

[0030] After the step of removing at least the second passivation contact layer corresponding to the first region and the interval region, the first region, the second region, and the interval region are all located on the same first plane; or,

[0031] After the step of removing at least the second passivation contact layer corresponding to the first region and the spacer region, the method of manufacturing the solar cell further includes: etching the spacer region by a third wet cleaning process to form a groove in the spacer region.

[0032] Secondly, based on the same concept, this application provides a solar cell, including a substrate having a first surface and a second surface disposed opposite to each other. The first surface includes a first region and a non-first region alternately disposed in a first direction. The non-first region includes a spaced region and a second region, the spaced region being located between adjacent first and second regions. The solar cell includes:

[0033] A first passivation contact layer is located in the first region;

[0034] The second passivation contact layer is located in the second region, and the doping types of the doping elements in the first passivation contact layer and the second passivation contact layer are different.

[0035] The first region and the second region are located on the same first plane, which is parallel to the plane containing the base.

[0036] In some embodiments, the width of the interval region is 0; or,

[0037] The first region, the second region, and the interval region are all located on the same first plane; or,

[0038] The solar cell further includes a groove located in the interval region. The groove includes a first sidewall connecting the first region and a second sidewall connecting the second region. The angle between the first sidewall and the first region is an obtuse angle. The angle between the second sidewall and the second region is also an obtuse angle.

[0039] In some embodiments, the solar cell further includes a groove, the cross-section of which is trapezoidal or triangular.

[0040] In some embodiments, the second surface has a plurality of first microstructures;

[0041] The surfaces of both the first passivation contact layer and the second passivation contact layer away from the second surface have multiple second microstructures;

[0042] The first microstructure and the second microstructure have a first height and a second height in the second direction, respectively. The first microstructure and the second microstructure have a first width and a second width in the third direction, respectively. The second direction is perpendicular to the plane where the second surface is located, and the third direction is parallel to the plane where the second surface is located.

[0043] The first height of the first microstructure is greater than the second height of the second microstructure, and the first width of the first microstructure is greater than the second width of the second microstructure.

[0044] In some embodiments, the first height of the first microstructure is 0.8 μm-1.1 μm, and the first width of the first microstructure is 1 μm-1.3 μm; and / or,

[0045] The second height of the second microstructure is 0.1 μm-0.3 μm, and the second width of the second microstructure is 0.1 μm-0.5 μm; and / or,

[0046] The plurality of the first microstructures include at least one of an upright pyramid, an inverted pyramid, and / or,

[0047] The plurality of the second microstructures include at least one of irregular protrusions and depressions.

[0048] In some embodiments, the first passivation contact layer includes a first tunneling layer and a first doped semiconductor layer, wherein the first doped semiconductor layer is located on the side of the first tunneling layer away from the first region;

[0049] The second passivation contact layer includes a second tunneling layer and a second doped semiconductor layer, wherein the second doped semiconductor layer is located on the side of the second tunneling layer away from the second region;

[0050] The first doped semiconductor layer and the second doped semiconductor layer are doped with different types of doping elements.

[0051] Thirdly, this application provides a photovoltaic module, comprising:

[0052] A battery string is formed by connecting multiple solar cells as described in any one of the above descriptions, or by connecting multiple solar cells manufactured by the manufacturing method of any one of the above descriptions, or by connecting the tandem cells described above.

[0053] A connecting component for electrically connecting two adjacent solar cells;

[0054] An encapsulating film is used to cover the surface of the battery string;

[0055] A cover plate is used to cover the surface of the encapsulating film that faces away from the battery string.

[0056] In this embodiment, a method for manufacturing a solar cell includes: providing a substrate having a first surface and a second surface disposed opposite to each other; the first surface including a first region and a non-first region alternately disposed in a first direction; the non-first region including a spacer region and a second region, the spacer region being located between adjacent first and second regions; forming a first mask layer on the first surface and removing at least the first mask layer corresponding to the first region; forming a first passivation contact layer on the side of the first region and the first mask layer away from the second surface and removing at least the first passivation contact layer and the first mask layer corresponding to the non-first region; the first region and the second region being located in the same first plane, the first plane being parallel to the plane on which the substrate is located; forming a second passivation contact layer on the side of the first passivation contact layer and the non-first region away from the second surface and removing at least the second passivation contact layer corresponding to the first region and the spacer region; the first passivation contact layer and the second passivation contact layer being doped with different types of doping elements. That is, by first forming a first mask layer and at least removing the first mask layer corresponding to the first region; then forming a first passivation contact layer and at least removing the first passivation contact layer and the first mask layer corresponding to the non-first region, the first region and the second region can be located on the same first plane, which is parallel to the plane of the substrate. This results in no height difference or a small height difference between the first region and the second region. This eliminates the large height difference between the first region and the second region in related technologies, removes the sidewalls between the first region and the second region, and allows subsequent passivation treatment to effectively passivate this region (sidewall portion), thereby avoiding the problem of severe recombination in the sidewall area and ultimately improving the conversion efficiency of the solar cell. At the same time, having the first region and the second region on the same first plane also achieves uniform thickness across the entire surface of the solar cell and increases the actual thickness of the solar cell substrate, which is beneficial for improving the current (Isc). Attached Figure Description

[0057] To more clearly illustrate the technical solutions in the embodiments or exemplary embodiments of this application, the drawings used in the description of the embodiments or exemplary embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0058] Figure 1 This is a schematic diagram of the first process steps of a method for manufacturing a solar cell according to an embodiment of this application.

[0059] Figure 2 This is a schematic diagram of the first intermediate process in a first process step of a method for manufacturing a solar cell provided in an embodiment of this application.

[0060] Figure 3This is a second intermediate process in a first process step of a method for manufacturing a solar cell provided in an embodiment of this application.

[0061] Figure 4 This is a schematic diagram of the third intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment.

[0062] Figure 5 This is a schematic diagram of the fourth intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment.

[0063] Figure 6 This is a schematic diagram of the fifth intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment.

[0064] Figure 7 This is a schematic diagram of the sixth intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment.

[0065] Figure 8 This is a schematic diagram of the seventh intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment.

[0066] Figure 9 This is a schematic diagram of the second process steps of a method for manufacturing a solar cell provided in an embodiment of this application.

[0067] Figure 10 This is a schematic diagram of the first intermediate process in a second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0068] Figure 11 This is a second intermediate process schematic for a second process step in a method for manufacturing a solar cell provided in this application embodiment.

[0069] Figure 12 This is a third intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0070] Figure 13 This is an illustration of the fourth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0071] Figure 14 This is a schematic diagram of the fifth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0072] Figure 15 This is a schematic diagram of the sixth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0073] Figure 16 This is a schematic diagram of the seventh intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0074] Figure 17 This is an illustration of the eighth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0075] Figure 18 This is a schematic diagram of the ninth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0076] Figure 19 This is a schematic diagram of the tenth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0077] Figure 20 This is an illustration of the eleventh intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0078] Figure 21 This is an enlarged schematic diagram of a first passivation contact layer and a second passivation contact layer of a solar cell provided in an embodiment of this application.

[0079] Figure 22 This is a schematic diagram of the structure of a photovoltaic module provided in an embodiment of this application.

[0080] Reference numerals: Photovoltaic module 200; Solar cell 100; Substrate 11; First surface 111; Second surface 112; First region 111a; Non-first region 111b; Spacing region 111b1; Second region 111b2; First mask layer 12Y; First passivation contact layer 21; Second passivation contact layer 22; First tunneling layer 21a; First doped semiconductor layer 21b; Second tunneling layer 22a; Second doped semiconductor layer 22b; Second mask layer 13Y; First direction X; Second direction Y; Third direction Z; First thickness d1; Second thickness d2; First microstructure W1; Second microstructure W2; Groove A1; First sidewall A11; Second sidewall A12; First included angle α1; Second included angle α2; Passivation layer 31; First electrode 41; Second electrode 42; Battery string 203; Connecting component 204; Encapsulating film 202; Cover plate 201. Detailed Implementation

[0081] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0082] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0083] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0084] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0085] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0086] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0087] See Figures 1 to 8 . Figure 1 This is a schematic diagram of the first process steps of a method for manufacturing a solar cell according to an embodiment of this application. Figure 2 This is a schematic diagram of the first intermediate process in a first process step of a method for manufacturing a solar cell provided in an embodiment of this application. Figure 3 This is a second intermediate process in a first process step of a method for manufacturing a solar cell provided in an embodiment of this application. Figure 4 This is a schematic diagram of the third intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 5 This is a schematic diagram of the fourth intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 6 This is a schematic diagram of the fifth intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 7 This is a schematic diagram of the sixth intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 8 This is a schematic diagram of the seventh intermediate process in the first process step of a method for manufacturing a solar cell provided in this application embodiment.

[0088] See Figures 9 to 20 . Figure 9 This is a schematic diagram of the second process steps of a method for manufacturing a solar cell provided in an embodiment of this application. Figure 10This is a schematic diagram of the first intermediate process in a second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 11 This is a second intermediate process schematic for a second process step in a method for manufacturing a solar cell provided in this application embodiment. Figure 12 This is a third intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 13 This is an illustration of the fourth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 14 This is a schematic diagram of the fifth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 15 This is a schematic diagram of the sixth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 16 This is a schematic diagram of the seventh intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 17 This is an illustration of the eighth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 18 This is a schematic diagram of the ninth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 19 This is a schematic diagram of the tenth intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment. Figure 20 This is an illustration of the eleventh intermediate process in the second process step of a method for manufacturing a solar cell provided in this application embodiment.

[0089] Figures 1 to 8 This illustrates the first process and steps in the manufacturing method of solar cells. Figures 9 to 20 This illustrates the second process and steps in the manufacturing method of solar cells, compared to... Figures 1 to 8 Example, Figures 9 to 20 The example also includes steps S231 and S232.

[0090] Please see Figure 21 . Figure 21 This is an enlarged schematic diagram of a first passivation contact layer and a second passivation contact layer of a solar cell provided in an embodiment of this application. Figure 8 , Figure 19 , Figure 20 , Figure 21 This is also a schematic diagram of a solar cell provided in an embodiment of this application.

[0091] In a first aspect, this application provides a method for manufacturing a solar cell, the method comprising steps S100, S200, S300, and S400.

[0092] Step S100: A substrate is provided, the substrate having a first surface and a second surface disposed opposite to each other, the first surface including a first region and a non-first region disposed alternately in a first direction, the non-first region including a spaced region and a second region, the spaced region being located between adjacent first regions and second regions.

[0093] For example, such as Figure 2 As shown, or as Figure 10 As shown, a substrate 11 is provided. The substrate 11 has a first surface 111 and a second surface 112 disposed opposite to each other. The first surface 111 includes a first region 111a and a non-first region 111b disposed alternately in a first direction X. The non-first region 111b includes a spacer region 111b1 and a second region 111b2. The spacer region 111b1 is located between adjacent first regions 111a and second regions 111b2.

[0094] For example, the substrate 11 may contain doped elements, which may be of the N-type or P-type type. The N-type element may be a group V element such as phosphorus (P), bismuth (Bi), antimony (Sb) or arsenic (As), and the P-type element may be a group III element such as boron (B), aluminum (Al), gallium (Ga) or indium (In).

[0095] For example, the substrate 11 has a first surface 111 and a second surface 112 disposed opposite to each other. The first surface 111 and the second surface 112 are disposed opposite to each other along the thickness direction of the substrate 11. Both the first surface 111 and the second surface 112 can be used to receive incident light.

[0096] For example, such as Figure 8 As shown, or as Figure 20 As shown, in some embodiments, the second surface 112 of the substrate 11 (e.g., the second surface 112 is the front) is the main light-receiving surface, and the first surface 111 of the substrate 11 is the secondary light-receiving surface (e.g., the first surface 111 is the back).

[0097] For example, in some other embodiments, the first surface 111 of the substrate 11 (e.g., the first surface 111 is the front) is the main light-receiving surface, and the second surface 112 of the substrate 11 is the secondary light-receiving surface (e.g., the second surface 112 is the back).

[0098] It is understandable that the terms "light-receiving surface" and "back-lighting surface" are relative. The light-receiving surface is specifically the surface on the substrate 11 of a solar cell or photovoltaic module that is primarily exposed to sunlight. With the development of solar cell technology, the back-lighting surface also receives energy from sunlight, mainly from reflected or scattered light from the surrounding environment.

[0099] For example, such as Figure 2 As shown, the first direction X is parallel to the plane where the first surface 111 is located, the first direction X is parallel to the plane where the second surface 112 is located, and the first direction X is also perpendicular to the thickness direction of the substrate 11.

[0100] For example, such as Figure 2 As shown, the second direction Y is perpendicular to the plane where the first surface 111 is located, the second direction Y is perpendicular to the plane where the second surface 112 is located, and the second direction Y is also the thickness direction of the substrate 11.

[0101] Step S200: Form a first mask layer on the first surface and remove at least the first mask layer corresponding to the first region.

[0102] For example, such as Figure 2 and Figure 3 ,as well as Figure 4 As shown, or as Figures 10 to 14 As shown, a first mask layer 12Y is formed on the first surface 111, and at least the first mask layer 12Y corresponding to the first region 111a is removed.

[0103] For example, the material of the first mask layer 12Y includes at least one of silicon nitride and silicon oxide, but is not limited thereto. In the second direction Y, the thickness of the first mask layer 12Y is 30nm-300nm, for example, the thickness of the first mask layer 12Y can be any value among 30nm, 50nm, 100nm, 150nm, 200nm, 250nm, and 300nm.

[0104] Step S300: A first passivation contact layer is formed on the side of the first region and the first mask layer away from the second surface, and at least the first passivation contact layer and the first mask layer corresponding to the non-first region are removed. The first region and the second region are located on the same first plane, and the first plane is parallel to the plane where the substrate is located.

[0105] For example, such as Figure 5 and Figure 6 As shown, or as Figure 15 and Figure 16 As shown, a first passivation contact layer 21 is formed on the side of the first region 111a and the first mask layer 12Y away from the second surface 112, and at least the first passivation contact layer 21 and the first mask layer 12Y corresponding to the non-first region 111b are removed. The first region 111a and the second region 111b2 are located on the same first plane, which is parallel to the plane where the substrate 11 is located.

[0106] For example, by first forming a first mask layer 12Y and at least removing the first mask layer 12Y corresponding to the first region 111a; then forming a first passivation contact layer 21 and at least removing the first passivation contact layer 21 and the first mask layer 12Y corresponding to the non-first region 111b, the first region 111a and the second region 111b2 can be located on the same first plane, which is parallel to the plane where the substrate 11 is located. This results in no height difference or a small height difference between the first region 111a and the second region 111b2.

[0107] For example, in related technologies, there is a significant height difference between the first region 111a and the second region 111b2. For instance, the first region 111a protrudes in a direction away from the second surface 112 relative to the second region 111b2, and the second region 111b2 protrudes in a direction away from the second surface 112 relative to the first region 111a. This results in a vertical or inclined sidewall between the first region 111a and the second region 111b2. This sidewall cannot be completely removed in subsequent processes, and subsequent passivation treatment cannot effectively passivate the region. This leads to severe regional recombination in the sidewall, ultimately reducing the conversion efficiency of the battery.

[0108] For example, the first region 111a and the second region 111b2 are located on the same first plane, which is parallel to the plane containing the substrate 11. This eliminates the significant height difference between the first region 111a and the second region 111b2 found in related technologies, and removes the sidewall between them. Subsequent passivation treatment can effectively passivate this region (sidewall portion), thereby avoiding the problem of severe recombination in this sidewall area and ultimately improving the battery's conversion efficiency.

[0109] For example, the first region 111a and the second region 111b2 are located on the same first plane, which is parallel to the plane containing the substrate 11. This means that the distance between the plane containing the first region 111a and the plane containing the second region 111b2 is less than or equal to 1 μm. For example, the distance between the plane containing the first region 111a and the plane containing the second region 111b2 is any value among 0 μm, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, and 1 μm.

[0110] Step S400: A second passivation contact layer is formed on the side of the first passivation contact layer and the non-first region away from the second surface, and at least the second passivation contact layer corresponding to the first region and the interval region is removed, wherein the doping types of the doping elements in the first passivation contact layer and the second passivation contact layer are different.

[0111] For example, such as Figure 7 As shown, or as Figure 17 and Figure 18 As shown, a second passivation contact layer 22 is formed on the side of the first passivation contact layer 21 and the non-first region 111b away from the second surface 112, and at least the second passivation contact layer 22 corresponding to the first region 111a and the spacer region 111b1 is removed. The doping types of the doping elements in the first passivation contact layer 21 and the second passivation contact layer 22 are different.

[0112] For example, in some implementations, such as Figure 21 As shown, the first passivation contact layer 21 includes a first tunneling layer 21a and a first doped semiconductor layer 21b, with the first doped semiconductor layer 21b located on the side of the first tunneling layer 21a away from the first region 111a; the second passivation contact layer 22 includes a second tunneling layer 22a and a second doped semiconductor layer 22b, with the second doped semiconductor layer 22b located on the side of the second tunneling layer 22a away from the second region 111b2; the doping types of the doping elements in the first doped semiconductor layer 21b and the second doped semiconductor layer 22b are different. The structure of the first passivation contact layer 21 and the second passivation contact layer 22 is not limited to this; for example, the first passivation contact layer 21 may also include other film layers besides the first tunneling layer 21a and the first doped semiconductor layer 21b.

[0113] For example, such as Figure 21 As shown, the first passivation contact layer 21 and the second passivation contact layer 22 are doped with different types of doping elements. For example, the first passivation contact layer 21 is doped with an N-type doping element, while the second passivation contact layer 22 is doped with a P-type doping element.

[0114] For example, such as Figure 21 As shown, the doping types of the first passivation contact layer 21 and the second passivation contact layer 22 are different. The first passivation contact layer 21 may include at least two sub-layers, with at least one sub-layer doped with a doping element. Similarly, the second passivation contact layer 22 may include at least two sub-layers, with at least one sub-layer doped with a doping element. However, it is not limited to these possibilities.

[0115] For example, such as Figure 21As shown, the first passivation contact layer 21 and the second passivation contact layer 22 have different doping types of doping elements. The first passivation contact layer 21 includes a first tunneling layer 21a and a first doped semiconductor layer 21b, and the second passivation contact layer 22 includes a second tunneling layer 22a and a second doped semiconductor layer 22b. It is possible that both the first and second doped semiconductor layers 21b and 22b are doped with doping elements, but the doping types of the doping elements in the first and second doped semiconductor layers 21b are different.

[0116] For example, through steps S300 and S400, the first passivation contact layer 21 is located only in the first region 111a, and the second passivation contact layer 22 is located only in the second region 111b2.

[0117] In this embodiment, by first forming a first mask layer 12Y and at least removing the first mask layer 12Y corresponding to the first region 111a; then forming a first passivation contact layer 21 and at least removing the first passivation contact layer 21 and the first mask layer 12Y corresponding to the non-first region 111b, the first region 111a and the second region 111b2 can be located on the same first plane, which is parallel to the plane where the substrate 11 is located. This results in no height difference or a small height difference between the first region 111a and the second region 111b2. This eliminates the large height difference between the first region 111a and the second region 111b2 in related technologies, and removes the sidewall between the first region 111a and the second region 111b2. Subsequent passivation processing can effectively passivate this region (sidewall portion), thereby avoiding the problem of severe recombination in the sidewall region, ultimately improving the conversion efficiency of the solar cell. At the same time, the first region 111a and the second region 111b2 are located on the same first plane, which can also achieve the uniformity of the thickness of the solar cell and increase the actual thickness of the substrate 11 of the solar cell, which is beneficial to the improvement of current (Isc).

[0118] In some implementations, such as Figure 3 and Figure 4 As shown, or as Figure 13 and Figure 14 As shown, the step of at least removing the first mask layer 12Y corresponding to the first region 111a (step S200) further includes: step S2001, removing the portion of the substrate 11 with a first thickness d1 at the first region 111a; as shown Figure 5 and Figure 6 As shown, or as Figure 15 and Figure 16As shown, the step of removing at least the first passivation contact layer 21 and the first mask layer 12Y corresponding to the non-first region 111b (step S300) further includes: step S3001, removing the portion of the substrate 11 with a second thickness d2 at the non-first region 111b.

[0119] For example, such as Figure 3 and Figure 4 As shown, or as Figure 13 and Figure 14 As shown, in step S200, step S2001 further removes the portion of the base 11 with a first thickness d1 at the first region 111a; as Figure 5 and Figure 6 As shown, or as Figure 15 and Figure 16 As shown, in step S300, step S3001 further removes the portion of the substrate 11 with a second thickness d2 at the location other than the first region 111b. This ensures that in step S400, before forming the second passivation contact layer 22, the first region 111a and the second region 111b2 are located on the same first plane, which is parallel to the plane containing the substrate 11. This eliminates the large height difference between the first region 111a and the second region 111b2 in related technologies, removes the sidewall between the first region 111a and the second region 111b2, and the subsequent passivation process can effectively passivate this region (sidewall portion), thereby avoiding the problem of severe recombination in the area where the sidewall exists, and ultimately improving the conversion efficiency of the battery.

[0120] In some implementations, the first thickness d1 is 2μm-6μm, the second thickness d2 is 2μm-6μm; and / or, the first thickness d1 is equal to the second thickness d2.

[0121] For example, the first thickness d1 is 2μm-6μm, and the first thickness d1 can be any value among 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, 5.5μm, and 6μm.

[0122] For example, the second thickness d2 is 2μm-6μm, and the second thickness d2 can be any value among 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, 5.5μm, and 6μm.

[0123] For example, the values ​​of the first thickness d1 and the second thickness d2 can be set according to the actual situation, as long as the first region 111a and the second region 111b2 are located on the same first plane in step S400 before the second passivation contact layer 22 is formed, and the first plane is parallel to the plane where the substrate 11 is located.

[0124] For example, in step S100, the first region 111a and the second region 111b2 are located on the same first plane. In subsequent steps, the first thickness d1 is equal to the second thickness d2, which can make it possible that in step S400, before the formation of the second passivation contact layer 22, the first region 111a and the second region 111b2 are located on the same first plane, and the first plane is parallel to the plane where the substrate 11 is located.

[0125] In some implementations, such as Figure 2 and Figure 3 ,as well as Figure 4 As shown, or as Figures 10 to 14 As shown, the step of at least removing the first mask layer 12Y corresponding to the first region 111a (step S200) includes: removing the first mask layer 12Y corresponding to the first region 111a by a first laser; the step of removing the portion of the substrate 11 with a first thickness d1 at the first region 111a (step S2001) includes removing the portion of the substrate 11 with a first thickness d1 at the first region 111a by a first wet cleaning process; and / or, as Figure 5 and Figure 6 As shown, or as Figure 15 and Figure 16 As shown, the step of removing at least the first passivation contact layer 21 and the first mask layer 12Y corresponding to the non-first region 111b (step S300) includes: removing the first passivation contact layer 21 and the first mask layer 12Y corresponding to the non-first region 111b by a second laser; the step of removing the portion of the substrate 11 with a second thickness d2 at the non-first region 111b (step S3001) includes removing the portion of the substrate 11 with a second thickness d2 at the non-first region 111b by a second wet cleaning process.

[0126] For example, firstly removing the first mask layer 12Y corresponding to the first region 111a using a first laser can achieve extremely high removal efficiency and speed. Then, removing the portion of the substrate 11 with a first thickness d1 at the first region 111a using a first wet cleaning process can remove the laser-damaged portion of the substrate 11, resulting in a smooth / flat surface of the substrate 11 that meets preset requirements.

[0127] For example, firstly removing the first passivation contact layer 21 and the first mask layer 12Y corresponding to the non-first region 111b using a second laser can achieve extremely high removal efficiency and speed. Then, removing the portion of the substrate 11 with a second thickness d2 at the non-first region 111b using a second wet cleaning process can remove the laser-damaged portion of the substrate 11, resulting in a smooth / flat surface of the substrate 11 that meets preset requirements.

[0128] In some implementations, please refer to Figures 9 to 20For example, between the step of forming the first mask layer 12Y on the first surface 111 and the step of at least removing the first mask layer 12Y corresponding to the first region 111a (in step S200), the method for manufacturing a solar cell further includes: step S231, as follows: Figure 11 As shown, a first microstructure W1 is formed on the second surface 112; step S232, as... Figure 12 As shown, a second mask layer 13Y is formed on the second surface 112.

[0129] For example, the material of the second mask layer 13Y includes at least one of silicon nitride and silicon oxide, but is not limited thereto. In the second direction Y, the thickness of the second mask layer 13Y is 50 nm to 350 nm; for example, the thickness of the first mask layer 12Y and the second mask layer 13Y can be any value among 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, and 350 nm.

[0130] For example, step S200 may further include forming a first microstructure W1 on the second surface 112, which can improve the light absorption efficiency on the second surface 112. The second mask layer 13Y can protect the first microstructure W1 during the manufacturing process.

[0131] In some implementations, such as Figure 18 and 19 As shown, after the step of removing at least the second passivation contact layer 22 corresponding to the first region 111a and the spacer region 111b1 (step S400), the method for manufacturing a solar cell further includes: step S500, removing the second mask layer 13Y of the second surface 112.

[0132] For example, such as Figure 18 and 19 As shown, after step S400, the solar cell manufacturing method further includes step S500, which involves removing the second mask layer 13Y from the second surface 112, forming a diffusion layer from the first passivation contact layer 21, and forming a diffusion layer from the second passivation contact layer 22. This prepares the material for subsequent manufacturing processes.

[0133] In some implementations, such as Figure 20As shown, after the step of removing the second mask layer 13Y of the second surface 112 (step S500), the method for manufacturing a solar cell further includes: forming a second microstructure W2 on the first surface 111 and the second surface 112; the one-dimensional dimensions of the first microstructure W1 and the second microstructure W2 in the second direction Y are a first height and a second height, respectively, and the one-dimensional dimensions of the first microstructure W1 and the second microstructure W2 in the third direction Z are a first width and a second width, respectively, the second direction Y is perpendicular to the plane where the second surface 112 is located, and the third direction Z is parallel to the plane where the second surface 112 is located; the first height of the first microstructure W1 is greater than the second height of the second microstructure W2, and the first width of the first microstructure W1 is greater than the second width of the second microstructure W2.

[0134] For example, such as Figure 2 As shown, the third direction Z is parallel to the plane where the first surface 111 is located, the third direction Z is parallel to the plane where the second surface 112 is located, and the third direction Z is also perpendicular to the thickness direction of the substrate 11.

[0135] For example, the first microstructure W1 can effectively achieve secondary reflection of sunlight on the second surface 112. For instance, the first microstructure W1 includes multiple pyramid structures, and sunlight is reflected and absorbed two or more times between two adjacent pyramid structures, which improves the absorption rate of incident light and can greatly enhance the light capture effect, which helps to generate more photogenerated carriers, thereby improving the efficiency of solar cells.

[0136] For example, the second microstructure W2 can be formed on the first surface 111 and the second surface 112. For example, the second microstructure W2 can be formed on the first microstructure W1. For example, the second microstructure W2 can be formed on the surface of the first passivation contact layer 21 and the second passivation contact layer 22. The second microstructure W2 is based on the first microstructure W1 and further improves the absorption rate of the solar cell for incident light. For example, at least one of the irregular protrusions and depressions in the second microstructure W2 can increase the surface area for absorbing incident light, thereby further improving the absorption rate of the solar cell for incident light.

[0137] For example, the first height of the first microstructure W1 is greater than the second height of the second microstructure W2, and the first width of the first microstructure W1 is greater than the second width of the second microstructure W2. This allows the second microstructure W2 to be formed on the first microstructure W1, and also allows the second microstructure W2 to be formed on the surfaces of the first passivation contact layer 21 and the second passivation contact layer 22. The thickness of the first passivation contact layer 21 and the second passivation contact layer 22 is relatively small. Without damaging the first passivation contact layer 21 and the second passivation contact layer 22, the reflectivity of the first surface 111 can be reduced, the bifaciality can be increased, and the contact area between the gate lines and the first passivation contact layer 21 and the second passivation contact layer 22 can be increased, thereby improving battery efficiency.

[0138] It should be noted that instruments such as transmission electron microscope (TEM), 3D microscope or scanning electron microscope (SEM) can be used to measure the height and width of the first microstructure W1 and the height and width of the second microstructure W2.

[0139] In some embodiments, the first height of the first microstructure W1 is 0.8 μm-1.1 μm, and the first width of the first microstructure W1 is 1 μm-1.3 μm; and / or, the second height of the second microstructure W2 is 0.1 μm-0.3 μm, and the second width of the second microstructure W2 is 0.1 μm-0.5 μm; and / or, the plurality of first microstructures W1 include at least one of an upright pyramid and an inverted pyramid; and / or, the plurality of second microstructures W2 include at least one of irregular protrusions and depressions.

[0140] For example, the first height of the first microstructure W1 is 0.8μm-1.1μm, and the first height of the first microstructure W1 can be any value among 0.8μm, 0.85μm, 0.9μm, 0.95μm, 1μm, 1.05μm, and 1.1μm.

[0141] For example, the first width of the first microstructure W1 is 1μm-1.3μm, and the first width of the first microstructure W1 can be any value among 1μm, 1.05μm, 1.1μm, 1.15μm, 1.2μm, 1.25μm, and 1.3μm.

[0142] For example, the second height of the second microstructure W2 is 0.1μm-0.3μm, and the second height of the second microstructure W2 can be any value among 0.1μm, 0.15μm, 0.2μm, 0.25μm, and 0.3μm.

[0143] For example, the second width of the second microstructure W2 is 0.1μm-0.5μm, and the second width of the second microstructure W2 can be any value among 0.1μm, 0.2μm, 0.3μm, 0.4μm, and 0.5μm.

[0144] In some embodiments, the width of the spacer region 111b1 is 0 (not shown in the figure); or, after the step of at least removing the second passivation contact layer 22 corresponding to the first region 111a and the spacer region 111b1 (step S400), as... Figure 8 As shown, the first region 111a, the second region 111b2, and the spacer region 111b1 are all located on the same first plane; or, after the step of at least removing the second passivation contact layer 22 corresponding to the first region 111a and the spacer region 111b1 (step S400), as... Figure 18 As shown, the method for manufacturing a solar cell further includes: step S600, etching the spacer region 111b1 by a third wet cleaning process to form a groove A1 in the spacer region 111b1.

[0145] For example, in the first direction X, the width of the spacing region 111b1 is 0 (not shown in the figure), that is, no spacing region 111b1 is set, and the first passivation contact layer 21 and the second passivation contact layer 22 are adjacent or in contact.

[0146] For example, such as Figure 8 As shown, the first region 111a, the second region 111b2, and the interval region 111b1 are all located on the same first plane, that is, no groove A1 is provided in the interval region 111b1.

[0147] For example, such as Figure 18 As shown, the method for manufacturing a solar cell further includes: step S600, etching the spacer region 111b1 by a third wet cleaning process to form a groove A1 in the spacer region 111b1.

[0148] For example, the spacing region 111b1 is used to separate the first passivation contact layer 21 from the second passivation contact layer 22, thereby preventing leakage caused by contact between the first passivation contact layer 21 and the second passivation contact layer 22, thereby improving the reliability of the formed back contact solar cell.

[0149] For example, the groove A1 can better completely isolate the first passivation contact layer 21 and the second passivation contact layer 22, which helps to reduce the leakage effect of the back contact battery and thus improve the low light response.

[0150] It should be noted that, in Figures 1 to 8 In the example, after step S400, and in combination Figure 21 As shown, or in Figures 9 to 20 In the example, after step S600 or step S500, and in combination Figure 21As shown, the method for manufacturing a solar cell may further include the following steps: Step S700, forming a passivation layer 31 and / or an antireflection layer on the surface of at least one of the first surface 111 and the second surface 112; forming a first electrode 41 and a second electrode 42 on the side of the passivation layer 31 and / or the antireflection layer of the first surface 111 away from the substrate 11, wherein the first electrode 41 is electrically connected to the first passivation contact layer 21 (the first doped semiconductor layer 21b), and the second electrode 42 is electrically connected to the second passivation contact layer 22 (the second doped semiconductor layer 22b).

[0151] Secondly, this application also provides a solar cell 100, which can be manufactured using any of the solar cell manufacturing methods described above. For example... Figure 8 ,or Figure 19 ,or Figure 20 ,or Figure 21 As shown, the solar cell 100 includes a substrate 11, which has a first surface 111 and a second surface 112 disposed opposite to each other. The first surface 111 includes a first region 111a and a non-first region 111b alternately disposed in a first direction X. The non-first region 111b includes a spacer region 111b1 and a second region 111b2, with the spacer region 111b1 located between adjacent first regions 111a and second regions 111b2. The solar cell 100 includes a first passivation contact layer 21 and a second passivation contact layer 22. The first passivation contact layer 21 is located in the first region 111a; the second passivation contact layer 22 is located in the second region 111b2. The first passivation contact layer 21 and the second passivation contact layer 22 are doped with different types of doping elements. The first region 111a and the second region 111b2 are located on the same first plane, which is parallel to the plane on which the substrate 11 is located.

[0152] For example, solar cell 100 has the beneficial effects of any of the above-described methods for manufacturing solar cells, which will not be elaborated further here. The film layers and structures in solar cell 100 that are the same as or similar to those in the above-described methods for manufacturing solar cells will be briefly described and will not be elaborated further here.

[0153] In this embodiment, the first region 111a and the second region 111b2 are located on the same first plane, which is parallel to the plane containing the substrate 11. This results in no height difference or a small height difference between the first region 111a and the second region 111b2. This eliminates the large height difference between the first region 111a and the second region 111b2 found in related technologies, and removes the sidewall between them. Subsequent passivation treatment can effectively passivate this region (sidewall portion), thereby avoiding the problem of severe recombination in this sidewall area and ultimately improving the battery's conversion efficiency.

[0154] In some embodiments, the width of the interval region 111b1 is 0 (not shown in the figure); or, the first region 111a, the second region 111b2, and the interval region 111b1 are all located on the same first plane; or, as... Figure 18 As shown, the solar cell also includes a groove A1 located in the spacer region 111b1. The groove A1 includes a first sidewall A11 connecting the first region 111a and a second sidewall A12 connecting the second region 111b2. The angle between the first sidewall A11 and the first region 111a is an obtuse angle; the angle between the second sidewall A12 and the second region 111b2 is an obtuse angle.

[0155] For example, such as Figures 18 to 20 As shown, the angle between the first sidewall A11 and the first region 111a is the first included angle α1, and the angle between the second sidewall A12 and the second region 111b2 is the second included angle α2. Both the first included angle α1 and the second included angle α2 are obtuse angles, and both the first included angle α1 and the second included angle α2 are 120°. o -150 o For example, both the first included angle α1 and the second included angle α2 can be 120°. o 130 o 140 o 150 o Any value in the range.

[0156] In some embodiments, the solar cell also includes a groove A1, the cross-section of which is trapezoidal or triangular.

[0157] For example, the cross-section of the groove A1 is trapezoidal or triangular, and the first included angle α1 and the second included angle α2 are both obtuse angles, which can increase the light trapping effect of the interval region 111b1, reduce reflectivity, and increase light absorption.

[0158] For example, the process of forming the groove A1 can be to anisotropically etch the substrate 11 using an alkaline solution and add additives to assist the etching.

[0159] In some embodiments, the second surface 112 has a plurality of first microstructures W1; the surfaces of the first passivation contact layer 21 and the second passivation contact layer 22 away from the second surface 112 each have a plurality of second microstructures W2; the one-dimensional dimensions of the first microstructures W1 and the second microstructures W2 in the second direction Y are a first height and a second height, respectively, and the one-dimensional dimensions of the first microstructures W1 and the second microstructures W2 in the third direction Z are a first width and a second width, respectively, the second direction Y is perpendicular to the plane where the second surface 112 is located, and the third direction Z is parallel to the plane where the second surface 112 is located; the first height of the first microstructure W1 is greater than the second height of the second microstructure W2, and the first width of the first microstructure W1 is greater than the second width of the second microstructure W2.

[0160] In some embodiments, the first height of the first microstructure W1 is 0.8 μm-1.1 μm, and the first width of the first microstructure W1 is 1 μm-1.3 μm; and / or, the second height of the second microstructure W2 is 0.1 μm-0.3 μm, and the second width of the second microstructure W2 is 0.1 μm-0.5 μm; and / or, the plurality of first microstructures W1 include at least one of an upright pyramid and an inverted pyramid; and / or, the plurality of second microstructures W2 include at least one of irregular protrusions and depressions.

[0161] In some embodiments, the first passivation contact layer 21 includes a first tunneling layer 21a and a first doped semiconductor layer 21b, the first doped semiconductor layer 21b being located on the side of the first tunneling layer 21a away from the first region 111a; the second passivation contact layer 22 includes a second tunneling layer 22a and a second doped semiconductor layer 22b, the second doped semiconductor layer 22b being located on the side of the second tunneling layer 22a away from the second region 111b2; the doping types of the doping elements in the first doped semiconductor layer 21b and the second doped semiconductor layer 22b are different.

[0162] It should be noted that, in combination Figure 21 As shown, the solar cell 100 may further include a passivation layer 31 and / or an antireflection layer, a first electrode 41, and a second electrode 42. The passivation layer 31 and / or the antireflection layer are located on the side of the first passivation contact layer 21 and the second passivation contact layer 22 away from the substrate 11. The first electrode 41 and the second electrode 42 are located on the side of the passivation layer 31 and / or the antireflection layer away from the substrate 11. The first electrode 41 is electrically connected to the first passivation contact layer 21, and the second electrode 42 is electrically connected to the second passivation contact layer 22. A passivation layer and / or an antireflection layer may also be provided on one side of the second surface 112, which is not limited here.

[0163] Please see Figure 22 , Figure 22 This is a schematic diagram of the structure of a photovoltaic module provided in an embodiment of this application.

[0164] Thirdly, based on the same application concept, this application also provides a photovoltaic module 200, which includes: a battery string 203, which is formed by connecting a plurality of solar cells 100 as described above, or by connecting solar cells 100 manufactured by a method for manufacturing a plurality of solar cells 100 as described above, or by connecting tandem cells as described above; a connecting member 204 for electrically connecting two adjacent solar cells 100; an encapsulating film 202 for covering the surface of the battery string 203; and a cover plate 201 for covering the surface of the encapsulating film 202 facing away from the surface of the battery string 203.

[0165] For example, in some embodiments, the connecting component 204 may include a conductive strip, and multiple battery strings 203 can be electrically connected. An encapsulating film 202 covers both the front and back sides of the solar cell 100 or the tandem solar cell 100.

[0166] For example, in some embodiments, the encapsulating film 202 may be an organic encapsulating film such as ethylene-vinyl acetate copolymer (EVA) film, polyethylene octene coelastomer (POE) film, or polyethylene terephthalate (PET) film.

[0167] For example, in some embodiments, the cover plate 201 can be a glass cover plate, a plastic cover plate, or other cover plate with light-transmitting function.

[0168] For example, in some embodiments, the surface of the cover plate 201 facing the encapsulation layer can be an uneven surface, thereby increasing the utilization of incident light.

[0169] It should be noted that the photovoltaic module 200 of this application and the solar cell 100 of any of the above claims are based on the same application concept, and the photovoltaic module 200 and the solar cell 100 of any of the above claims have the same or similar effects, which will not be repeated here.

[0170] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0171] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for manufacturing a solar cell, characterized by, include: A substrate is provided, the substrate having a first surface and a second surface disposed opposite to each other, the first surface including a first region and a non-first region disposed alternately in a first direction, the non-first region including a spacer region and a second region, the spacer region being located between adjacent first regions and second regions; Forming a first mask layer on the first surface and removing at least the first mask layer corresponding to the first region includes: removing a portion of the substrate of a first thickness at the first region; A first passivation contact layer is formed on the side of the first region and the first mask layer away from the second surface, and at least the first passivation contact layer and the first mask layer corresponding to the non-first region are removed, including: removing a portion of the substrate of the second thickness at the non-first region, such that the first region and the second region are located on the same first plane, and the first plane is parallel to the plane where the substrate is located; A second passivation contact layer is formed on the side of the first passivation contact layer and the non-first region away from the second surface, and at least the second passivation contact layer corresponding to the first region and the interval region is removed, wherein the doping types of the doping elements in the first passivation contact layer and the second passivation contact layer are different.

2. The method for manufacturing a solar cell according to claim 1, characterized in that, The first thickness is 2μm-6μm, the second thickness is 2μm-6μm; and / or, The first thickness is equal to the second thickness.

3. The method for manufacturing a solar cell according to claim 1, characterized in that, The step of at least removing the first mask layer corresponding to the first region includes: removing the first mask layer corresponding to the first region by using a first laser; the step of removing the portion of the substrate of the first thickness at the first region includes: removing the portion of the substrate of the first thickness at the first region by using a first wet cleaning process; and / or, The step of removing at least the first passivation contact layer and the first mask layer corresponding to the non-first region includes: removing the first passivation contact layer and the first mask layer corresponding to the non-first region by using a second laser; the step of removing the portion of the substrate of the second thickness in the non-first region includes removing the portion of the substrate of the second thickness in the non-first region by using a second wet cleaning process.

4. The method for manufacturing a solar cell according to claim 1, wherein Between the step of forming a first mask layer on the first surface and the step of at least removing the first mask layer corresponding to the first region, the method of manufacturing the solar cell further includes: A first microstructure is formed on the second surface; A second mask layer is formed on the second surface.

5. The method for manufacturing a solar cell according to claim 4, characterized in that, After the step of removing at least the second passivation contact layer corresponding to the first region and the interval region, the method of manufacturing the solar cell further includes: Remove the second mask layer from the second surface.

6. The method for manufacturing a solar cell according to claim 5, characterized in that, After the step of removing the second mask layer from the second surface, the method for manufacturing the solar cell further includes: A second microstructure is formed on the first surface and the second surface; The first microstructure and the second microstructure have a first height and a second height in the second direction, respectively. The first microstructure and the second microstructure have a first width and a second width in the third direction, respectively. The second direction is perpendicular to the plane where the second surface is located, and the third direction is parallel to the plane where the second surface is located. The first height of the first microstructure is greater than the second height of the second microstructure, and the first width of the first microstructure is greater than the second width of the second microstructure.

7. The method for manufacturing a solar cell according to claim 6, characterized in that, The first height of the first microstructure is 0.8 μm-1.1 μm, and the first width of the first microstructure is 1 μm-1.3 μm; and / or, The second height of the second microstructure is 0.1 μm-0.3 μm, and the second width of the second microstructure is 0.1 μm-0.5 μm; and / or, The plurality of the first microstructures include at least one of an upright pyramid, an inverted pyramid, and / or, The plurality of the second microstructures include at least one of irregular protrusions and depressions.

8. The method for manufacturing a solar cell according to claim 1, characterized in that, After the step of removing at least the second passivation contact layer corresponding to the first region and the interval region, the first region, the second region and the interval region are all located on the same first plane; or, After the step of removing at least the second passivation contact layer corresponding to the first region and the spacer region, the method of manufacturing the solar cell further includes: etching the spacer region by a third wet cleaning process to form a groove in the spacer region.

9. A solar cell, characterized in that, The solar cell is manufactured using the method for manufacturing a solar cell as described in any one of claims 1 to 8. The solar cell includes a substrate having a first surface and a second surface disposed opposite to each other. The first surface includes a first region and a non-first region alternately disposed in a first direction. The non-first region includes a spacer region and a second region, the spacer region being located between adjacent first and second regions. The solar cell includes: A first passivation contact layer is located in the first region; The second passivation contact layer is located in the second region, and the doping types of the doping elements in the first passivation contact layer and the second passivation contact layer are different. The first region and the second region are located on the same first plane, which is parallel to the plane containing the base.

10. The solar cell according to claim 9, characterized in that, The first region, the second region, and the interval region are all located on the same first plane; or, The solar cell further includes a groove located in the interval region. The groove includes a first sidewall connecting the first region and a second sidewall connecting the second region. The angle between the first sidewall and the first region is an obtuse angle. The angle between the second sidewall and the second region is also an obtuse angle.

11. The solar cell according to claim 10, characterized in that, The solar cell also includes a groove located in the interval region, the groove having a trapezoidal or triangular cross-section.

12. The solar cell according to claim 9, characterized in that, The second surface has a plurality of first microstructures; The surfaces of both the first passivation contact layer and the second passivation contact layer away from the second surface have multiple second microstructures; The first microstructure and the second microstructure have a first height and a second height in the second direction, respectively. The first microstructure and the second microstructure have a first width and a second width in the third direction, respectively. The second direction is perpendicular to the plane where the second surface is located, and the third direction is parallel to the plane where the second surface is located. The first height of the first microstructure is greater than the second height of the second microstructure, and the first width of the first microstructure is greater than the second width of the second microstructure.

13. The solar cell according to claim 12, characterized in that, The first height of the first microstructure is 0.8 μm-1.1 μm, and the first width of the first microstructure is 1 μm-1.3 μm; and / or, The second height of the second microstructure is 0.1 μm-0.3 μm, and the second width of the second microstructure is 0.1 μm-0.5 μm; and / or, The plurality of the first microstructures include at least one of an upright pyramid, an inverted pyramid, and / or, The plurality of the second microstructures include at least one of irregular protrusions and depressions.

14. The solar cell according to claim 9, characterized in that, The first passivation contact layer includes a first tunneling layer and a first doped semiconductor layer, wherein the first doped semiconductor layer is located on the side of the first tunneling layer away from the first region; The second passivation contact layer includes a second tunneling layer and a second doped semiconductor layer, wherein the second doped semiconductor layer is located on the side of the second tunneling layer away from the second region; The first doped semiconductor layer and the second doped semiconductor layer are doped with different types of doping elements.

15. A photovoltaic module, characterized in that, include: A battery string is formed by connecting multiple solar cells manufactured by the method of manufacturing solar cells as described in any one of claims 1 to 8, or by connecting multiple solar cells as described in any one of claims 9 to 14; A connecting component for electrically connecting two adjacent solar cells; An encapsulating film is used to cover the surface of the battery string; and A cover plate is used to cover the surface of the encapsulating film that faces away from the battery string.

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