具有双层压电膜结构的体声波谐振器、制备方法及滤波器
By using a bulk acoustic resonator with a double-layer piezoelectric film structure, the problems of reduced quality factor and poor stability caused by the reduction of film thickness are solved, achieving high-frequency resonance and low-loss filtering performance, which is suitable for high-frequency communication equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XI AN JIAOTONG UNIV
- Filing Date
- 2025-12-19
- Publication Date
- 2026-07-17
AI Technical Summary
Existing thin-film bulk acoustic wave filters suffer from reduced resonator quality factor, shorter lifespan, increased acoustic loss, and poor stability after reducing film thickness, making it difficult to meet the performance requirements of 5G-Advanced and 6G technologies for high-frequency broadband filters.
The bulk acoustic resonator employing a double-layer piezoelectric film structure changes the excitation mode of the resonator's signal port by adding an intermediate electrode between the two piezoelectric films. Combined with the dry film cavity and silicon oxide layer, it provides a stable acoustic wave propagation space, enhancing structural stability and reliability while maintaining high-frequency resonance and an effective electromechanical coupling coefficient.
It achieves high-frequency resonance, improves the frequency selectivity and stability of the resonator, reduces interference from the external environment on sound wave propagation, reduces acoustic loss, and enhances mechanical strength and energy conversion efficiency, making it suitable for high-frequency communication systems.
Smart Images
Figure CN121749937B_ABST