Silicon carbide-based ultraviolet position sensitive detector based on thin schottky metal material and preparation method thereof

Abstract

The present application relates to the technical field of semiconductor device photoelectric detection, and particularly relates to a silicon carbide-based ultraviolet position sensitive detector based on a thin Schottky metal material and a preparation method thereof, which comprises a N-type ohmic contact lower electrode, a N-type silicon carbide substrate and a N-type silicon carbide low-doped epitaxial layer which are sequentially connected from bottom to top; a Schottky metal film with a thickness less than 4nm is arranged on the N-type silicon carbide low-doped epitaxial layer and used for constituting a photosensitive area; a plurality of metal conductive electrodes are arranged at the top edge position of the Schottky metal film and electrically connected with the Schottky metal film, and used for leading out position-related electrical signals. The present application effectively overcomes the problems of limited response speed and insufficient time resolution of the existing pn junction type position sensitive detector, and effectively improves the detection efficiency and position resolution capability of the detector in the vacuum ultraviolet band.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic detection technology for semiconductor devices, specifically to a silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material and its fabrication method. Background Technology

[0002] A position sensitive detector (PSD) is a type of optoelectronic device that can directly convert the position information of an incident light spot into an electrical signal. It has the advantages of simple circuit structure, fast response speed, strong continuous positioning capability and high positioning accuracy. It has been widely used in non-contact precision measurement systems for various physical quantities such as displacement, angle, frequency and morphology, and has shown good application prospects in fields such as ultraviolet spectroscopy analysis, photolithography, space science exploration and high-energy physics experiments.

[0003] Currently, ultraviolet (UV) position-sensitive detectors are mainly silicon-based devices. These devices rely on mature semiconductor manufacturing processes and have certain advantages in positioning accuracy and consistency. However, due to the narrow bandgap, low critical shift energy, and limited thermal conductivity of silicon, it exhibits a high intrinsic response to visible and near-infrared light, making it difficult to effectively suppress background white light and easily introducing additional noise interference. Furthermore, under long-term high-energy UV irradiation, silicon-based devices are prone to radiation damage and performance degradation, thus limiting their application in scenarios requiring strong radiation, high temperatures, or high reliability. In contrast, the wide-bandgap semiconductor material 4H-SiC possesses characteristics such as a large bandgap, high critical shift energy, high thermal conductivity, and good chemical stability, exhibiting superior stability and reliability under high-energy UV radiation environments, providing a favorable material basis for achieving high-reliability UV position-sensitive detectors. Moreover, most existing UV position-sensitive detectors employ pn junction structures. The carrier diffusion and junction capacitance effects in pn junction devices limit their response speed. Furthermore, achieving high-quality pn junctions typically requires complex doping control and high-temperature thermal processing, increasing the complexity and cost of device fabrication. Moreover, for vacuum ultraviolet photons with penetration depths on the nanometer scale, absorption in semiconductor materials is mainly concentrated in the device surface region. A significant portion of photogenerated carriers are generated outside the junction region and require diffusion for collection. These carriers are prone to recombination, limiting the detection efficiency and position resolution of position-sensitive detectors in the vacuum ultraviolet band.

[0004] Therefore, how to further improve the radiation resistance and response speed of ultraviolet position-sensitive detectors, and enhance their carrier collection efficiency, position linearity, and long-term operational stability in the vacuum ultraviolet band is one of the key scientific issues faced in the design and fabrication of 4H-SiC-based ultraviolet position-sensitive detectors. Summary of the Invention

[0005] This invention provides a silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material and its fabrication method, in order to solve the problems of poor radiation resistance, slow response speed, low detection efficiency and poor position linearity of the detector in the ultraviolet band.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: This invention provides a silicon carbide-based ultraviolet position-sensitive detector based on a thin Schottky metal material, characterized by comprising, from bottom to top, an N-type ohmic contact lower electrode, an N-type silicon carbide substrate, and an N-type silicon carbide low-doped epitaxial layer; a Schottky metal thin film with a thickness of less than 4 nm is disposed on the N-type silicon carbide low-doped epitaxial layer to form a photosensitive region; a plurality of metal conductive electrodes are disposed at the top edge of the Schottky metal thin film, and the metal conductive electrodes are electrically connected to the Schottky metal thin film to extract position-related electrical signals.

[0007] In the above design, an ultrathin Schottky metal region formed by electron beam evaporation on an N-type silicon carbide low-doped epitaxial layer is used to form the Schottky contact and define the boundary of the detector's photosensitive region. The metal conductive electrode located on the photosensitive surface is used to extract the signal current, effectively improving the device's current spread and carrier collection capabilities, facilitating device packaging and wire bonding, and serving as the ground electrode during testing. The lower electrode of the aforementioned N-type ohmic contact is connected to the positive terminal during testing.

[0008] The principle of the aforementioned silicon carbide-based ultraviolet position-sensitive detector scheme is as follows: A Schottky junction is formed by depositing a nanometer-scale ultrathin metal film on the surface of a lightly doped silicon carbide epitaxial layer using electron beam evaporation. Under an applied reverse bias, the depletion region of the Schottky junction widens longitudinally within the lightly doped epitaxial layer, thus forming an active absorption region. When the photosensitive surface is locally irradiated with ultraviolet light, the incident photons are absorbed in the active absorption region, generating electron-hole pairs. Under the combined action of the strong built-in electric field in the junction region and the applied reverse electric field, the electrons are driven to drift to the N-th electron at the bottom of the device. + Layer. N + The layer has a high doping concentration, high conductivity, and forms an equipotential layer, where collected electrons are distributed throughout the N-layer. + The region rapidly diffuses to form a uniform potential distribution; however, when the metal film thickness is on the order of nm, it is in a quasi-continuous state, and the conductivity decreases significantly. Holes accumulate in the illuminated area and are distributed non-uniformly along the direction parallel to the junction plane, which disrupts the original junction balance and forms a transverse electric field, thereby forming a transverse current. The four electrodes located above the ultrathin metal layer will output a current inversely proportional to the distance from the centroid of the light spot to their respective electrodes, thus achieving effective detection of the centroid position of the incident light spot.

[0009] If the center of the photosensitive surface of the position-sensitive detector is taken as the origin, the current of the four electrodes E1, E2, E3, and E4 (defined sequentially in clockwise or counterclockwise directions) can be read. I 1. I 2. I 3 and I 4. To determine the position of the incident light spot, the size of the photosensitive surface is... l×l , l Given the side length of the photosensitive region, the coordinates of the centroid of the incident light spot on the position-sensitive detector are expressed as follows: This invention differs from pn junction-based ultraviolet position-sensitive detectors by proposing and employing a Schottky junction-based device structure. It achieves efficient position detection of ultraviolet light by introducing an ultrathin metal film onto the semiconductor surface to form a metal-semiconductor Schottky junction. Specifically, when the metal film thickness is in the nanometer range (below 4 nm), its morphology transitions from a continuous thin film to a quasi-continuous state, significantly enhancing carrier scattering and reducing in-plane conductivity compared to bulk materials or thick metal films. This invention utilizes these electrical characteristics to enable the metal film to maintain its Schottky junction formation function while possessing resistive characteristics suitable for detecting position-related electrical signal distributions, thereby achieving effective resolution of the incident light spot position. Compared to pn junction-type position-sensitive detectors that rely on minority carrier diffusion and recombination processes, Schottky junction devices are dominated by majority carrier transport, have smaller junction capacitance, and shorter carrier transit times, thus achieving a much higher response speed than pn junction structures, effectively overcoming the limitation of response speed in existing pn junction-type position-sensitive detectors. In particular, since the absorption depth of vacuum ultraviolet light in semiconductor materials is usually only on the nanometer scale, the ultrathin metal / semiconductor Schottky junction structure used in this invention enables photogenerated carriers to be efficiently generated and rapidly collected in the depletion region near the interface, thereby significantly improving the detection efficiency and position resolution of the device in the vacuum ultraviolet band.

[0010] Preferably, the material of the Schottky metal thin film includes at least one of nickel, platinum, and palladium. Nickel, as a commonly used industrial metal, has the advantages of mature preparation process, good deposition uniformity, low cost, and ease of large-scale production; platinum and palladium have excellent corrosion resistance and long-term stability, and can maintain stable Schottky characteristics in harsh environments, thereby ensuring that the device can maintain efficient photoelectric response during long-term use.

[0011] To further improve device performance, the doping concentration of the N-type silicon carbide substrate is 1×10⁻⁶. 18 cm -3 ~1×10 20 cm -3 The doping concentration of the low-doped N-type silicon carbide epitaxial layer is 1×10⁻⁶. 14 cm-3 ~1×10 16 cm -3 The materials used to form the Schottky metal thin film by electron beam evaporation are nickel, platinum, palladium, etc.; the temperature for forming the Schottky contact by thermal annealing is 200~500℃ and the time is 30~120s; the thickness of the N-type silicon carbide low-doped epitaxial layer is greater than 1μm.

[0012] Preferably, the material of the N-type ohmic contact lower electrode includes at least one of nickel, titanium, aluminum, and gold, wherein the material of the metal conductive electrode includes at least one of titanium and gold, and the total thickness of the metal conductive electrode is at least 800 nm.

[0013] To ensure the overall performance of the device, the material of the lower electrode of the N-type ohmic contact is a mixture of one or more materials such as nickel, titanium, aluminum, and gold in any proportion. Nickel and titanium are suitable for long-term stable operation due to their good conductivity and contact stability with silicon carbide, while aluminum and gold are easy to control in thickness during the deposition process, ensuring the consistency of the ohmic contact. Preferably, the nickel layer, titanium layer, aluminum layer, and gold layer are sequentially connected from bottom to top, wherein the thickness of the nickel layer is 30-40 nm, the thickness of the titanium layer is 40-60 nm, the thickness of the aluminum layer is 90-110 nm, and the thickness of the gold layer is 90-110 nm. The total thickness of the metal conductive electrodes is at least 800 nm to ensure large-area electrode arrangement. The device exhibits low resistance and excellent current transmission capability. Furthermore, the combination of the aforementioned materials can be optimized based on device size and application environment to balance electrical performance, processing stability, and cost control, thereby improving the reliability and manufacturability of the detector. Preferably, the metal conductive electrode is composed of a titanium layer and a gold layer, with the titanium layer having a thickness of 450-550 nm and the gold layer having a thickness of 450-550 nm. The metal conductive electrode is circular or square and is entirely located on the Schottky metal thin film. The metal conductive electrode can be compatible as a pad region for wire bonding, and the pad region is preferably circular or square with a radius or side length of at least 90 μm, which facilitates device packaging and better balances conductivity.

[0014] Preferably, with reference to the upper surface of the detector, the Schottky metal thin film is axially symmetric about the horizontal, vertical and diagonal directions, and the four metal conductive electrodes disposed on the Schottky metal thin film are also axially symmetric about the horizontal, vertical and diagonal directions.

[0015] Preferably, the dimensions of the Schottky metal thin film in both the length and width directions are smaller than the dimensions of the N-type silicon carbide low-doped epitaxial layer.

[0016] Preferably, a passivation layer is provided on top of the N-type silicon carbide low-doped epitaxial layer surrounding the Schottky metal thin film.

[0017] Preferably, the detector operates in a wavelength range covering the conventional ultraviolet band of 200–400 nm and the vacuum ultraviolet band of 10–200 nm.

[0018] The fabrication method of the silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material includes the following steps: 1) An N-type silicon carbide low-doped epitaxial layer is epitaxially grown on the upper surface of an N-type silicon carbide substrate; preferably, the N-type silicon carbide low-doped epitaxial layer is epitaxially grown on the upper surface of the substrate by high-temperature chemical vapor deposition (CVD); 2) An N-type ohmic contact lower electrode is deposited on the lower surface of an N-type silicon carbide substrate and subjected to thermal annealing to form an N-type ohmic contact; preferably, the N-type ohmic contact electrode is deposited by physical vapor deposition (PVD). 3) A passivation layer is deposited on the surface of the low-doped N-type silicon carbide epitaxial layer; preferably, a high-temperature thermal oxidation method is used. 4) Spin-coat photoresist onto the passivation layer surface, and form a photoresist pattern to define the Schottky metal thin film window by exposure and development. Then, remove the passivation layer of the Schottky metal thin film area by etching. Preferably, wet etching is used to etch the window area of ​​the photosensitive region. 5) Spin-coat photoresist on the surface and form a photoresist pattern to define the Schottky metal thin film window by exposure and development. Then deposit the Schottky metal thin film and perform thermal annealing to form the Schottky contact. Preferably, the Schottky metal thin film is deposited by physical vapor deposition (PVD). 6) Spin-coat photoresist on the surface and form a photoresist pattern to define the metal conductive electrode window by exposure and development. Then deposit the metal conductive electrode. Preferably, the metal conductive electrode is deposited by physical vapor deposition (PVD) to complete the fabrication of the silicon carbide-based ultraviolet position sensitive detector based on thin Schottky metal material.

[0019] Preferably, in step 2), the temperature of the heat annealing treatment is 700~900°C and the time is 2~3 min; in step 5), the temperature of the heat annealing treatment is 200~500°C and the time is 30~120 s.

[0020] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention relates to a silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material, which effectively combines the high photoelectric conversion capability of Schottky junction with the tunable resistance characteristics of ultrathin metal film; it effectively improves the collection efficiency of photogenerated carriers and the response speed of the device, while the device has a simple structure, controllable process, strong adaptability to process conditions, and high stability, which is conducive to large-scale preparation and industrial application. Attached Figure Description

[0021] Figure 1This is a flowchart of the fabrication method of a silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material in Embodiment 1 of the present invention.

[0022] Figure 2 This is a schematic diagram of the structure of the silicon carbide-based ultraviolet position sensitive detector based on thin Schottky metal material in Embodiment 1 of the present invention.

[0023] Figure 3 The image shows the current-voltage characteristic curve of the silicon carbide-based ultraviolet position sensitive detector based on thin Schottky metal material under dark field in Embodiment 1 of the present invention.

[0024] Figure 4 This shows the capacitance-voltage relationship and the current-voltage characteristic curve between surface electrodes of the silicon carbide-based ultraviolet position sensitive detector based on thin Schottky metal material in Embodiment 1 of the present invention.

[0025] Figure 5 The image shows the responsivity curve of the silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material in the wavelength range of 200-400 nm in Embodiment 1 of the present invention.

[0026] Figure 6 This is a two-dimensional position scan point diagram of a silicon carbide-based ultraviolet position sensitive detector based on thin Schottky metal material in Embodiment 1 of the present invention.

[0027] In the figure: 1-N-type ohmic contact lower electrode; 2-N-type silicon carbide substrate; 3-N-type silicon carbide low-doped epitaxial layer; 4-Schottky metal thin film; 5-Metal conductive electrode; 6-Passivation layer. Detailed Implementation

[0028] To better understand the present invention, the following embodiments further illustrate the content of the present invention, but the content of the present invention is not limited to the following embodiments.

[0029] Example 1 like Figure 2 As shown, a silicon carbide-based ultraviolet position-sensitive detector based on a thin Schottky metal material includes: an N-type ohmic contact lower electrode 1, an N-type silicon carbide substrate 2, and an N-type silicon carbide low-doped epitaxial layer 3, connected sequentially from bottom to top. A Schottky metal thin film 4 is formed on the surface of the N-type silicon carbide low-doped epitaxial layer 3 by electron beam evaporation. A metal conductive electrode 5 is provided at the top edge of the Schottky metal thin film 4, and a passivation layer 6 is provided around the periphery of the Schottky metal thin film 4. The side length of the metal conductive electrode 5 is 350 mm. × 5000μm.

[0030] like Figure 1 As shown, the fabrication process of the above-mentioned device is as follows: Step 101, with a doping concentration of 1×10 19 cm-3 On a 350 μm thick N-type silicon carbide substrate 2, a 10 μm thick low-doped N-type silicon carbide epitaxial layer 3 is grown epitaxially using metal-organic chemical vapor deposition (MOCVD), with a doping concentration of 3 × 10⁻⁶. 14 cm -3 .

[0031] Step 102: Metals Ni / Ti / Al / Au are sequentially deposited on the back of the N-type silicon carbide substrate 2 using physical vapor deposition (PVD), with thicknesses of approximately 35 / 50 / 100 / 100 nm respectively. The epitaxial wafer after metal deposition is placed in an annealing furnace and annealed at high temperature in a nitrogen atmosphere to form the N-type ohmic contact lower electrode 1.

[0032] Step 103: A 10 nm thick SiO2 passivation layer 6 is formed on the surface of the epitaxial wafer using a high-temperature thermal oxidation method. A thin Schottky metal photosensitive region window is defined by photolithography and development. The SiO2 passivation layer 6 in the window area is removed by wet etching to form the SiO2 passivation layer 6.

[0033] Step 104: Define the Schottky metal thin film window on the surface of the epitaxial wafer by photolithography and then deposit metal Ni on the surface of the low-doped N-type silicon carbide epitaxial layer 3 using physical vapor deposition (PVD) method. The thickness of the metal Ni is about 2 nm, forming the Schottky metal thin film 4.

[0034] Step 105: Define the metal conductive electrode window by photolithography and then deposit metal Ti / Au sequentially at the top edge of the Schottky metal film using physical vapor deposition (PVD) method, with thicknesses of approximately 500 / 500 nm, thereby forming the metal conductive electrode 5.

[0035] Step 106, dicing: Divide the epitaxial wafer into individual devices, wire bond the finished devices onto TO sockets, and perform further electrical and optical tests. In the test, the N-type ohmic contact lower electrode 1 is connected to a positive voltage, and the metal conductive electrode 5 is grounded.

[0036] The silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material provided in Example 1 above effectively combines the high-efficiency photoelectric conversion capability of Schottky junction with the tunable resistance characteristics of ultrathin metal film; it effectively improves the photogenerated carrier collection efficiency and device response speed. At the same time, the device has a simple structure, controllable process, strong adaptability to process conditions, and high stability, which is conducive to large-scale preparation and industrial application.

[0037] The ultraviolet position-sensitive detector based on an ultrathin metal-semiconductor Schottky junction provided in Embodiment 1 above represents a completely different technical solution compared to traditional position-sensitive detectors. Firstly, their physical structures and working mechanisms are fundamentally different. The former forms a metal-semiconductor Schottky junction by introducing a nanometer-scale ultrathin metal film onto the semiconductor surface and utilizes the high in-plane resistance characteristic resulting from the transition of the ultrathin metal film from a continuous to a quasi-continuous state to achieve distributed acquisition of position-related electrical signals. The latter typically relies on the pn junction structure inside the semiconductor and the diffusion and recombination processes of charge carriers within the bulk to achieve position detection. Secondly, they differ significantly in carrier transport modes and performance priorities. The former primarily relies on majority carrier drift transport, resulting in small junction capacitance and short carrier transit time, enabling high-speed, high-efficiency position detection of ultraviolet light. The latter, however, primarily relies on minority carrier diffusion transport, resulting in larger junction capacitance and limited response speed, making it difficult to simultaneously achieve high detection efficiency and high time response performance in the ultraviolet band.

[0038] Depend on Figure 3 As can be seen, the silicon carbide-based ultraviolet position sensitive detector based on thin Schottky metal material provided in Example 1 above has a leakage current of less than 10pA for all four electrodes under room temperature conditions and a reverse bias voltage of -20V. The device has an extremely low noise level and is suitable for detecting weak signals.

[0039] Figure 4 This relates the capacitance and bias voltage of the silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material provided in Embodiment 1 above. Figure 4 As can be seen, under different bias voltages, the four metal conductive electrodes and the common ohmic contact exhibit almost identical capacitance values, indicating good consistency. Furthermore, the highly linear current-voltage curves among the four metal conductive electrodes demonstrate that the ultrathin metal film forms a stable and uniform quasi-continuous resistive network in the in-plane direction.

[0040] Figure 5 The responsivity curves of the silicon carbide-based ultraviolet position sensor based on thin Schottky metal material provided in Example 1 above are shown in the wavelength range of 200-400 nm (bias voltage of 0 V). The responsivity of the device at 193 nm was also measured to be approximately 0.06 A / W. This demonstrates the feasibility of the silicon carbide-based ultraviolet position sensor based on thin Schottky metal material in Example 1 in improving the detection efficiency of devices in the ultraviolet band.

[0041] Figure 6 This is a two-dimensional position scan point map of the silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material provided in Embodiment 1 above. Figure 6 It is known that silicon carbide-based ultraviolet position-sensitive detectors can achieve position detection with high linearity.

Claims

1. A silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material, characterized in that: The system includes an N-type ohmic contact lower electrode (1), an N-type silicon carbide substrate (2), and an N-type silicon carbide low-doped epitaxial layer (3) connected sequentially from bottom to top. A Schottky metal thin film (4) with a thickness of less than 4 nm is disposed on the N-type silicon carbide low-doped epitaxial layer (3) to form a photosensitive region. Several metal conductive electrodes (5) are disposed at the top edge of the Schottky metal thin film (4). The metal conductive electrodes (5) are electrically connected to the Schottky metal thin film (4) to extract position-related electrical signals. With reference to the upper surface of the detector, the Schottky metal thin film (4) is axially symmetrical about the horizontal, vertical and diagonal directions. The four metal conductive electrodes (5) disposed on the top edge of the Schottky metal thin film (4) are also axially symmetrical about the horizontal, vertical and diagonal directions. The detector's operating wavelength range covers the conventional ultraviolet band of 200-400 nm and the vacuum ultraviolet band of 10-200 nm.

2. The silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material according to claim 1, characterized in that: The material of the Schottky metal thin film (4) includes at least one of nickel, platinum, and palladium.

3. The silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material according to claim 1, characterized in that: The dimensions of the Schottky metal thin film (4) in both length and width directions are smaller than the dimensions of the N-type silicon carbide low-doped epitaxial layer (3).

4. The silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material according to claim 1, characterized in that: The four metal conductive electrodes (5) disposed on the top edge of the Schottky metal film (4) are circular or square in shape, and have a diameter or length greater than 90 μm.

5. The silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material according to claim 1, characterized in that: The material of the N-type ohmic contact lower electrode (1) includes at least one of nickel, titanium, aluminum, and gold; the material of the metal conductive electrode (5) includes at least one of titanium and gold, and the total thickness of the metal conductive electrode (5) is at least 800 nm.

6. The silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material according to claim 1, characterized in that: A passivation layer (6) is provided on top of the N-type silicon carbide low-doped epitaxial layer (3) surrounding the Schottky metal thin film (4).

7. A method for fabricating a silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material as described in any one of claims 1 to 6, characterized in that, Includes the following steps: 1) An N-type silicon carbide low-doped epitaxial layer (3) is epitaxially grown on the surface of an N-type silicon carbide substrate (2). 2) An N-type ohmic contact lower electrode (1) is deposited on the lower surface of an N-type silicon carbide substrate (2), and then subjected to thermal annealing to form an N-type ohmic contact; 3) A passivation layer (6) is deposited on the surface of the low-doped N-type silicon carbide epitaxial layer (3). 4) Spin-coat photoresist on the surface of the passivation layer (6), and form a photoresist pattern to define the window of the Schottky metal thin film (4) by exposure and development, and then remove the passivation layer (6) in the window area of ​​the Schottky metal thin film (4) by etching. 5) Spin-coat photoresist on the surface and form a photoresist pattern to define the window of the Schottky metal thin film (4) by exposure and development. Then deposit the Schottky metal thin film (4) and perform thermal annealing to form the Schottky contact. 6) Spin-coat photoresist on the surface and form a photoresist pattern by exposure and development to define the window of the metal conductive electrode (5). Then deposit the metal conductive electrode (5) to complete the fabrication of the silicon carbide-based ultraviolet position sensitive detector based on thin Schottky metal material.

8. The method for fabricating a silicon carbide-based ultraviolet position-sensitive detector based on thin Schottky metal material according to claim 7, characterized in that: In step 2), the temperature for heat annealing is 700–900°C, and the time is 2–3 minutes; In step 5), the temperature of the heat annealing treatment is 200–500°C and the time is 30–120 seconds.

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