Preparation method of large-area CsCu2I3 perovskite photoelectric film
CN121793498APending Publication Date: 2026-04-03HEFEI UNIV OF TECH
Patent Information
- Application Number
- CN202610262913.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-05
- Publication Date
- 2026-04-03
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Figure CN121793498A_ABST
Abstract
The invention relates to the field of perovskite photoelectric material preparation, and discloses a large-area CsCu2I3 perovskite photoelectric film preparation method, which comprises: dispersing cesium iodide and cuprous iodide powder in a non-toxic solvent, uniformly stirring at a room temperature, and placing in a reaction kettle for a reaction; after the reaction is finished, washing, drying and grinding a crude product to obtain CsCu2I3 powder; and finally, ultrasonically dispersing the powder in a non-toxic solvent to prepare low-concentration slurry, and carrying out spraying and low-temperature annealing treatment to obtain the CsCu2I3 perovskite photoelectric film. The process is simple, the solvent is non-toxic, the cost is low, and the prepared large-area photoelectric film has good photoelectric performance and is suitable for the fields of photoelectric detectors, solar cells and the like.
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Citation Information
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