Plastic package mold

By optimizing the design of the molding die, reducing the number of runners and the waste of molding compound, the problem of large waste of molding compound in the existing technology is solved, and the effects of reducing costs and improving efficiency are achieved.

CN121793804APending Publication Date: 2026-04-03WUXI CHINA RESOURCE MICRO ASSEMBLY TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-30
Publication Date
2026-04-03

AI Technical Summary

Technical Problem

Existing molding dies result in significant waste of molding compound during chip molding, leading to higher costs.

Method used

Design a molding die, including a first sub-mold and a second sub-mold, which reduces the number of flow channels connected to the cavity by forming an elongated receiving cavity and a connected flow channel after mold closing, optimizes the flow path of the molding compound, and reduces the amount of residual molding compound in the flow channel.

Benefits of technology

It effectively reduces the waste of molding compound during the molding process, lowers molding costs, and improves molding quality and efficiency.

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Abstract

The invention provides a plastic package mold which is used for carrying out plastic package on a semiconductor structure. A semiconductor substructure of the semiconductor structure comprises a plurality of electrical element groups arranged at intervals in a first direction and a plurality of pins located on two opposite sides of each electrical element group. The plastic packaging mold comprises a first sub-mold and a second sub-mold, a first butt joint surface of the first sub-mold is provided with at least one strip-shaped groove, and a second butt joint surface of the second sub-mold is provided with a first butt joint part which is in butt joint with each groove; one of the first butt joint surface and the second butt joint surface is provided with at least one recess, and the other one is provided with a second butt joint part in butt joint with each recess. After the first sub-mold and the second sub-mold are closed, the first butt joint surface abuts against the second butt joint surface, each groove is in butt joint with one first butt joint part to form a long-strip-shaped containing cavity, and each recess is in butt joint with one second butt joint part to form a flow channel communicated with one containing cavity; and each accommodating cavity is used for accommodating all the electrical element groups of one semiconductor substructure.
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Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a molding compound. Background Technology

[0002] Common semiconductor packaging technologies, such as chip packaging processes, may include the following steps: first, a lead frame is set on the chip, and the pins of the lead frame are electrically connected to the pads on the front side of the chip; then, the chip is encapsulated to form a plastic encapsulation layer that at least encapsulates the chip, resulting in a semiconductor structure including the chip, the lead frame, and the plastic encapsulation layer.

[0003] In the process of encapsulating chips, encapsulation molds are typically used. Currently, a significant amount of encapsulation material is wasted when encapsulating chips using these molds. Summary of the Invention

[0004] This application provides a molding die. The molding die is used to encapsulate a semiconductor structure; the semiconductor structure includes at least one semiconductor substructure, the semiconductor substructure including a plurality of electrical component groups spaced apart in a first direction and a plurality of pins located on opposite sides of each electrical component group in a second direction perpendicular to the first direction;

[0005] The molding die includes a first sub-die and a second sub-die. The first sub-die includes a first mating surface, and the second sub-die includes a second mating surface. The first mating surface is provided with at least one elongated groove, and the second mating surface is provided with a first mating portion that mates with each of the grooves. One of the first mating surface and the second mating surface is provided with at least one recess, and the other is provided with a second mating portion that mates with each of the recesses.

[0006] After the first sub-mold and the second sub-mold are closed, the first mating surface abuts against the second mating surface, each groove abuts against a first mating part to form an elongated receiving cavity, and each recess abuts against a second mating part to form a flow channel communicating with a receiving cavity; each receiving cavity is used to accommodate all electrical component groups of a semiconductor substructure.

[0007] In one embodiment, the receiving cavity includes opposite ends in the length direction, and one end of the receiving cavity is in communication with the corresponding flow channel.

[0008] In one embodiment, the first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each of the first material channels is connected to one of the second material channels;

[0009] When the recess is located on the first mating surface, each recess is connected to a first material channel, and the groove is located on the side of the recess connected to it away from the first material channel; when the recess is located on the second mating surface, each recess is connected to a second material channel, and the groove is located on the side of the second mating portion connected to it away from the first material channel.

[0010] In one embodiment, the depth of each groove is the same.

[0011] In one embodiment, when the recess is located on the first mating surface, the portion of the recess adjacent to the corresponding groove extends in a straight line, and the extending direction is parallel to the length direction of the groove; when the recess is located on the second mating surface, the portion of the recess adjacent to the first mating portion extends in a straight line, and the extending direction is parallel to the length direction of the first mating portion.

[0012] In one embodiment, the first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each first material channel is connected to one second material channel; the molding die is provided with a plurality of the grooves, and at least two of the grooves are arranged side by side in a third direction perpendicular to its length direction;

[0013] When the recess is located on the first mating surface, each recess is connected to a first material channel, and at least two grooves are arranged side by side and adjacent to each other in the third direction, and their corresponding recesses are connected to the same first material channel; when the recess is located on the second mating surface, each recess is connected to a second material channel, and at least two grooves are arranged side by side and adjacent to each other in the third direction, and their corresponding recesses are connected to the same second material channel.

[0014] In one embodiment, the first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each first material channel is connected to one second material channel; the molding die is provided with a plurality of the grooves and a plurality of the first mating portions;

[0015] When the recess is located on the first mating surface, each recess is connected to a first material channel, and at least one first material channel is located between two adjacent recesses arranged in the length direction of the groove. The two adjacent recesses arranged in the length direction of the groove are respectively connected to the first material channel located between them through the corresponding recess.

[0016] When the recess is located on the second mating surface, each recess is connected to a second material channel, and at least one second material channel is located between two adjacent recesses arranged in the length direction of the first mating portion; two adjacent recesses arranged in the length direction of the first mating portion are respectively connected to the second material channel located between them.

[0017] In one embodiment, the first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each first material channel is connected to a second material channel, and each receiving cavity is connected to a first material channel respectively;

[0018] The first mating surface is provided with a plurality of grooves, and the second mating surface is provided with a plurality of the first mating portions; all the grooves are located on the same side of the corresponding first material channel.

[0019] In one embodiment, one of the first mating surface and the second mating surface is provided with at least two elongated receiving grooves, and the other is provided with a third mating portion that mates with each of the receiving grooves;

[0020] After the first sub-mold and the second sub-mold are closed, each of the third mating portions abuts against one of the receiving grooves to form a cavity for receiving pins. Each of the receiving cavities has a cavity on its opposite sides, and the length direction of the cavity is parallel to the length direction of the receiving cavity.

[0021] In one embodiment, the depth of the receiving groove is the same everywhere.

[0022] The molding die provided in this application provides a molding die for molding semiconductor structures. After the first sub-mold and the second sub-mold are closed, each groove on the first mating surface and a first mating portion on the second mating surface are mated to form an elongated receiving cavity. Each receiving cavity can accommodate all electrical component groups of a semiconductor substructure. Molding material can enter the receiving cavity through a flow channel communicating with each receiving cavity to mold the electrical component groups located in each receiving cavity. Compared with the scheme where each receiving cavity can only accommodate one electrical component and each receiving cavity is connected to one flow channel, this application can greatly reduce the number of flow channels communicating with the receiving cavity. Since the molding material remaining in the flow channel after molding is the main source of waste, the solution of this application can effectively reduce the amount of molding material wasted during the molding process by reducing the number of flow channels, thereby reducing the molding cost. Attached Figure Description

[0023] Figure 1 This is a top view of a semiconductor substructure provided in an exemplary embodiment of this application;

[0024] Figure 2This is a top view of the first sub-mold provided in an exemplary embodiment of this application;

[0025] Figure 3 This is a top view of the second sub-mold provided in an exemplary embodiment of this application;

[0026] Figure 4 This is a top view of a molding compound structure provided in an exemplary embodiment of this application;

[0027] Figure 5 yes Figure 4 A partial enlarged view of the encapsulated structure shown;

[0028] Figure 6 This is a three-dimensional structural diagram of a semiconductor packaging structure provided in an exemplary embodiment of this application;

[0029] Figure 7 This is a top view of the first sub-mold provided in another exemplary embodiment of the application;

[0030] Figure 8 This is a top view of the second sub-mold provided in another exemplary embodiment of this application;

[0031] Figure 9 This is a top view of a molding structure provided in another exemplary embodiment of this application. Specific Implementation

[0032] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0033] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0034] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0035] This application provides a molding die. The molding die is used to encapsulate a semiconductor structure. The semiconductor structure includes at least one semiconductor substructure. For example... Figure 1 As shown, the semiconductor substructure 10 includes a lead frame unit 101 and multiple electrical component groups 11 spaced apart in a first direction X. The lead frame unit 101 includes multiple pins 12. Each electrical component group 11 has multiple pins 12 on opposite sides in a second direction Y perpendicular to the first direction X, and each pin 12 can extend along the second direction Y. When the semiconductor structure includes multiple semiconductor substructures 10, the multiple semiconductor substructures 10 are arranged side-by-side in the second direction Y. The lead frame units 101 of the semiconductor substructures 10 arranged side-by-side in the second direction Y together form a lead frame, and the lead frame units 101 of the same lead frame are connected. The semiconductor substructure 10 can be divided into multiple units 102. Each unit 102 includes an electrical component group 11 and multiple pins 12 located on both sides of the electrical component group 11. Within the same unit 102, each pin 12 is electrically connected to an electrical component in the electrical component group 11.

[0036] like Figure 2 and Figure 3 As shown, the molding die includes a first sub-mold 20 and a second sub-mold 30. The first sub-mold 20 includes a first mating surface 21, and the second sub-mold 30 includes a second mating surface 31. The first mating surface 21 is provided with at least one elongated groove 211, and the second mating surface 31 is provided with a first mating portion 311 that mates with each of the grooves 211. One of the first mating surface 21 and the second mating surface 31 is provided with at least one recess 212, and the other is provided with a second mating portion 312 that mates with each of the recesses 212.

[0037] After the first sub-mold 20 and the second sub-mold 30 are closed, the first mating surface 21 and the second mating surface 31 abut against each other. Each groove 211 and a first mating part 311 are mated to form an elongated receiving cavity. Each recess 212 and a second mating part 312 are mated to form a flow channel communicating with a receiving cavity. Each receiving cavity is used to accommodate all electrical component groups 11 of a semiconductor substructure 10.

[0038] When encapsulating a semiconductor structure using the molding die provided in this application, an elongated groove 211 is provided on the first mating surface 21 of the first sub-mold 20, and a first mating portion 311 is provided on the second mating surface 31 of the second sub-mold 30. After the first sub-mold 20 and the second sub-mold 30 are closed, each groove 211 and a first mating portion 311 are mated to form an elongated receiving cavity, and each receiving cavity can accommodate all electrical component groups 11 of a semiconductor substructure 10. The molding compound can enter the receiving cavity through the flow channel communicating with each receiving cavity to encapsulate the electrical component group located in each receiving cavity. Compared with the scheme where each receiving cavity can only accommodate one electrical component and each receiving cavity is connected to one flow channel, this application can greatly reduce the number of flow channels communicating with the receiving cavity. Since the molding compound remaining in the flow channel after molding is the main source of waste, the solution of this application can effectively reduce the amount of molding compound wasted during the molding process by reducing the number of flow channels, thereby reducing the molding cost.

[0039] In one embodiment, such as Figure 1 As shown, each of the electrical component groups 11 includes two electrical components 111. In other embodiments, the electrical component group 11 may include one electrical component, or three or more electrical components. In some embodiments, the electrical component 111 is a chip.

[0040] In one embodiment, such as Figure 1 As shown, each leadframe unit 101 includes a plurality of base islands 13, which are used to carry electrical components, and the end of each pin 12 is connected to a base island 13. An electrical component 111 can be mounted on each base island 13. In other embodiments, the leadframe unit 101 may not include base islands.

[0041] In one embodiment, such as Figure 2 and Figure 3 As shown, the groove 211 and the recess 212 are disposed on the first mating surface 21, and the first mating portion 311 and the second mating portion 312 are disposed on the second mating surface 31. In other embodiments, the groove 211 and the second mating portion 312 may be disposed on the first mating surface 21, and the first mating portion 311 and the recess 212 may be disposed on the second mating surface 31. In some embodiments, the depth of the recess 212 may be less than the depth of the groove 211.

[0042] In one embodiment, the depth of each of the grooves 211 is the same. This configuration allows for the use of the same molding die for different semiconductor substructures with the same height and width, even if the lengths of the units 102 in the first direction X of the different semiconductor substructures are different, thus improving the applicability of the molding die.

[0043] In one embodiment, the first mating portion 311 may be planar. In other embodiments, the first mating portion 311 may be an annular protrusion. After the first sub-mold 20 and the second sub-mold 30 are closed, the protrusion abuts against the edge region of the groove 211.

[0044] In one embodiment, the second mating portion 312 may be planar.

[0045] In one embodiment, the receiving cavity includes opposite ends along its length, with one end of the receiving cavity communicating with a corresponding flow channel. That is, one receiving cavity communicates with one flow channel, and the molding compound flows through the flow channel into the corresponding receiving cavity. Figure 2 As shown, one end of the groove 211 is connected to a recess 212. This further reduces the waste of molding compound; and since the flow channel is connected to the end of the cavity, there is no need to reserve a flow channel on the side of the cavity, and there is no need to reserve a flow channel between the pins located on the side of the cavity. Given a fixed length of the semiconductor substructure, the semiconductor substructure can be equipped with more pins and electrical component groups, which helps to improve the efficiency of manufacturing semiconductor products including semiconductor component groups.

[0046] In one embodiment, such as Figure 2 and Figure 3 As shown, the first sub-mold 20 is provided with at least one first material channel 22; the second sub-mold 30 is provided with at least one second material channel 32; after the first sub-mold and the second sub-mold are closed, each of the first material channels 22 and one of the second material channels 32 are connected to form a raw material cavity. The molding die also includes an extrusion rod. After the first sub-mold 20 and the second sub-mold 30 are closed, the extrusion rod squeezes the molding material in the raw material cavity into the flow channel connected to it, so that the molding material enters the receiving cavity through the flow channel to form a molding compound.

[0047] In one embodiment, such as Figure 2 and Figure 3 As shown, the first sub-mold 20 is provided with a plurality of first material channels 22 arranged at intervals, and the second sub-mold 30 is provided with a second material channel 32 corresponding to each of the first material channels 22.

[0048] In one embodiment, such as Figure 2As shown, the recess 212 is located on the first mating surface 21, and each recess 212 communicates with one of the first material channels 22. The groove 211 is located on the side of the recess 212 connected to it that is away from the first material channel 22. In other embodiments, when the recess 212 is located on the second mating surface 31, each recess 212 communicates with one of the second material channels 32, and the groove 211 is located on the side of the second mating portion 312 connected to it that is away from the first material channel 31. This arrangement can make the total length of the flow channel shorter, which can further reduce the waste of molding compound.

[0049] In one embodiment, such as Figure 2 As shown, the recess 212 is located on the first mating surface 21. The portion 2121 adjacent to the corresponding groove 211 of each recess 212 extends in a straight line, and the extension direction is parallel to the length direction of the groove 211. In other embodiments, when the recess 212 is located on the second mating surface 31, the portion adjacent to the first mating portion 311 of each recess 212 extends in a straight line, and the extension direction is parallel to the length direction of the first mating portion 311. Thus, after the first sub-mold 20 and the second sub-mold 30 are closed, the flow channel formed by the mating of each recess 212 and the corresponding second mating portion 312 extends in a straight line with the portion adjacent to the corresponding receiving cavity, and is parallel to the length direction of the receiving cavity. Therefore, before the molding compound flows into the receiving cavity through the flow channel, the flow direction of the molding compound is the same as the length direction of the receiving cavity, which makes the flow of the molding compound more stable after entering the receiving cavity, which helps to improve the molding quality.

[0050] In one embodiment, such as Figure 2 As shown, the molding die 20 has a plurality of grooves 211, and at least two grooves 211 are arranged side by side in a third direction M perpendicular to its length direction N. In some embodiments, such as Figure 2 As shown, the molding die 20 has two sets of grooves, each set of grooves including multiple grooves 211 arranged in parallel on the third direction M.

[0051] In one embodiment, such as Figure 2 and Figure 3 As shown, the recess 212 is located on the first mating surface, and each recess 212 is connected to one of the first material channels 22; at least two grooves 211 are arranged side by side and adjacent to each other on the third direction M, and their corresponding recesses 212 are connected to the same first material channel 22. In another embodiment, when the recess 212 is located on the second mating surface 31, each recess 212 is connected to one of the second material channels 32, at least two grooves 211 are arranged side by side and adjacent to each other on the third direction M, and their corresponding recesses 212 are connected to the same second material channel 32.

[0052] This configuration helps to reduce the number of first channel 22 and second channel 32, thereby reducing the total amount of molding compound remaining in the first channel 22 and second channel 32. At the same time, it can make the length of the flow channel smaller, further reducing the waste of molding compound. Figure 2 and Figure 3 In the illustrated embodiment, two adjacent recesses 212 arranged side-by-side on the third direction M are connected to the same first material channel 22. In other embodiments, the number of recesses 212 arranged side-by-side on the third direction M and connected to the same first material channel 22 or second material channel 32 may be greater than or equal to three.

[0053] In one embodiment, such as Figure 2 and Figure 3 As shown, at least two of the grooves 211 are arranged along the length direction N of the grooves 211. The recesses 212 are located on the first mating surface 21, each recess 212 communicates with a first material channel 22, and at least one first material channel 22 is located between two adjacent grooves 211 arranged along the length direction N of the grooves 211. Two adjacent grooves 211 arranged along the length direction N of the grooves 211 are respectively connected to the first material channel 22 located between them through corresponding recesses 212. In another embodiment, the recesses 212 are located on the second mating surface 31, each recess 212 communicates with a second material channel 32, and at least one second material channel 32 is located between two adjacent recesses 212 arranged along the length direction of the first mating portion 311; two adjacent recesses 212 arranged along the length direction of the first mating portion 311 are respectively connected to the second material channel 32 located between them.

[0054] With this configuration, after the first sub-mold 20 and the second sub-mold 30 are closed, there are two accommodating cavities arranged adjacent to each other along their length, and a material cavity is provided between the two accommodating cavities. The two accommodating cavities are respectively connected to the material cavity located between them through flow channels. This helps to reduce the number of the first material channel 22 and the second material channel 32, thereby reducing the amount of molding compound remaining in the first material channel 22 and the second material channel 32. At the same time, it can make the length of the flow channel smaller, further reducing the waste of molding compound.

[0055] In one implementation, such as Figure 2 and Figure 3 As shown, the recess 212 is located on the first mating surface 21. The same first material channel 22 is connected to four recesses 212, and two of the recesses 212 are located on the same side of the first material channel 22, while the other two recesses 212 are located on the other side of the first material channel 22.

[0056] In one embodiment, when encapsulating a semiconductor structure using a molding die, the first sub-mold 20 is located below the second sub-mold 30. This arrangement, by placing the semiconductor structure on the first sub-mold 20 before encapsulation, confines each electrical component group within its corresponding groove 211, thereby preventing movement of the semiconductor structure relative to the first sub-mold 20 during the mold closing process between the first and second sub-molds 30, and contributing to improved encapsulation quality.

[0057] In one embodiment, such as Figure 2 and Figure 3 As shown, one of the first mating surface 21 and the second mating surface 31 is provided with at least two elongated receiving grooves 213, and the other is provided with a third mating portion 313 that mates with each of the receiving grooves 213. After the first sub-mold 20 and the second sub-mold 30 are molded together, each of the third mating portions 313 abuts against one of the receiving grooves 213 to form a cavity for receiving the pin 12. The cavity is provided on opposite sides of each receiving cavity, and the length direction of the cavity is the same as the length direction of the receiving cavity. With this configuration, after the first sub-mold 20 and the second sub-mold 30 are molded together, the pins 12 of each semiconductor substructure are all accommodated in the cavity. Figure 2 and Figure 3 In the illustrated embodiment, the receiving groove 213 is disposed on the first mating surface 21, and the third mating portion 313 is disposed on the second mating surface 31. In other embodiments, the receiving groove 213 may be disposed on the second mating surface 31, and the third mating portion 313 may be disposed on the first mating surface 21.

[0058] In one embodiment, the third mating portion 313 may be a plane, or the third mating portion 313 may be an annular protrusion. After the first sub-mold 20 and the second sub-mold 30 are closed, the protrusion abuts against the edge region of the corresponding receiving groove 213.

[0059] In one embodiment, the depth of the receiving groove 213 is the same everywhere. With this configuration, even if the lengths of the units 102 of different semiconductor substructures with the same height and width are different in the first direction X, all pins 12 can be accommodated in the cavity, and the same molding die can be used for molding, which can improve the applicability of the molding die.

[0060] The process of encapsulating a semiconductor structure using the encapsulation mold provided in this application is as follows: First, the semiconductor structure is placed on the lower sub-mold of the first sub-mold 20 and the second sub-mold 30; then, the first sub-mold 20 and the second sub-mold 30 are closed; then, encapsulating material is injected into the raw material cavity formed by the first material channel and the second material channel, and the encapsulating material in the raw material cavity is squeezed into the flow channel by the extrusion rod, so that the encapsulating material enters each receiving cavity through the flow channel to form an encapsulated body.

[0061] If two semiconductor structures are simultaneously encapsulated using a molding die, two connected encapsulated structures are obtained after encapsulation. These two connected encapsulated structures can then be cut and separated to obtain two... Figure 4 The encapsulated structure shown. (Example) Figure 4 and Figure 5 As shown, the molding structure includes multiple molding bodies 40 and molding waste blocks 50. Each molding body 40 encapsulates the electrical component groups 11 of a semiconductor substructure. The molding waste block 50 includes molding material located in the flow channel and molding material located in the raw material cavity.

[0062] In the Figure 4 The leads of the molded structure shown are bent and the molded structure is cut to obtain multiple [other products]. Figure 6 The semiconductor package structure shown includes a unit 102 of a semiconductor substructure 10 and a sub-mold 41 encapsulating it, the sub-mold 41 being a part of the molded body 40. Since the sub-mold 41 does not have pins, its two opposite sides are cut, and both sides are planar.

[0063] right Figure 4 The encapsulated structure shown can be cut using laser cutting technology to obtain multiple such... Figure 6 The semiconductor packaging structure shown is an example. Because the width of the molding compound is the same throughout, even if different semiconductor packaging structures have different pin counts, the molding compound can be cut using the same laser cutting die, eliminating the need for multiple cutting dies and helping to reduce manufacturing costs.

[0064] In one embodiment, such as Figure 7 and Figure 8As shown, the first mating surface 21 is provided with a plurality of grooves 211, and the second mating surface 31 is provided with a plurality of first mating portions 311; all the grooves 211 are located on the same side of the corresponding first material channel 22; all the first mating portions 311 are located on the same side of the corresponding second material channel 32. With this configuration, after the first sub-mold 20 and the second sub-mold 30 are closed, the receiving cavity is located on the same side of the first material channel 22 that it communicates with. During molding, the length direction of the receiving cavity can be made to be basically perpendicular to the horizontal plane. Then, the molding compound injected into the raw material cavity formed by the first material channel 22 and the second material channel 32 can flow to the receiving cavity under the action of gravity, which helps to reduce the resistance of the molding compound flow and improve the molding efficiency.

[0065] In one embodiment, such as Figure 7 and Figure 8 As shown, the first sub-mold 20 is provided with a plurality of first material channels 22 arranged at intervals, and the second sub-mold 30 is provided with a second material channel 32 corresponding to each of the first material channels 22. Each first material channel 22 is connected to two grooves 211, and all the grooves 211 are located on the same side of the corresponding first material channel 22.

[0066] use Figure 7 and Figure 8 The molding die shown can encapsulate one semiconductor structure at a time, resulting in a product as shown below. Figure 9 The encapsulated structure is shown. In the... Figure 9 The leads of the molded structure shown are bent and the molded structure is cut to obtain multiple [other products]. Figure 6 The semiconductor packaging structure shown.

[0067] In the embodiments of this application, "parallel," "perpendicular," and "same depth everywhere" refer to being substantially parallel, substantially perpendicular, and having two directions that are substantially the same. For example, parallelism between the length direction of A and the length direction of B includes situations where the length directions of A and B are parallel, and situations where the angle between the length directions of A and B is very small, such as less than 10°. For example, perpendicularity between the length direction of A and the length direction of B includes situations where the length directions of A and B are perpendicular, and situations where the angle between the length directions of A and B is close to 90° (such as 80° to 90°). For example, "same depth everywhere" means that the depth is the same everywhere, or that the difference between the maximum depth and the minimum depth is very small (such as the ratio of the difference between the maximum depth and the minimum depth to the maximum depth is less than or equal to 10%).

[0068] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the claims.

Claims

1. A molding die, characterized in that, Used for encapsulating a semiconductor structure; the semiconductor structure includes at least one semiconductor substructure, the semiconductor substructure including a plurality of electrical component groups spaced apart in a first direction and a plurality of pins located on opposite sides of each of the electrical component groups in a second direction perpendicular to the first direction; The molding die includes a first sub-die and a second sub-die. The first sub-die includes a first mating surface, and the second sub-die includes a second mating surface. The first mating surface is provided with at least one elongated groove, and the second mating surface is provided with a first mating portion that mates with each of the grooves. One of the first mating surface and the second mating surface is provided with at least one recess, and the other is provided with a second mating portion that mates with each of the recesses. After the first sub-mold and the second sub-mold are closed, the first mating surface abuts against the second mating surface, each groove abuts against a first mating part to form an elongated receiving cavity, and each recess abuts against a second mating part to form a flow channel communicating with a receiving cavity; each receiving cavity is used to accommodate all electrical component groups of a semiconductor substructure.

2. The molding die according to claim 1, characterized in that, The receiving cavity includes opposite ends in the length direction, and one end of the receiving cavity is connected to the corresponding flow channel.

3. The molding die according to claim 2, characterized in that, The first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each first material channel is connected to one second material channel; When the recess is located on the first mating surface, each recess is connected to a first material channel, and the groove is located on the side of the recess connected to it away from the first material channel; when the recess is located on the second mating surface, each recess is connected to a second material channel, and the groove is located on the side of the second mating portion connected to it away from the first material channel.

4. The molding die according to claim 1, characterized in that, The depth of each groove is the same.

5. The molding die according to claim 1, characterized in that, When the recess is located on the first mating surface, the portion of the recess adjacent to the corresponding groove extends in a straight line, and the extension direction is parallel to the length direction of the groove; when the recess is located on the second mating surface, the portion of the recess adjacent to the corresponding first mating portion extends in a straight line, and the extension direction is parallel to the length direction of the first mating portion.

6. The molding die according to claim 1, characterized in that, The first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each first material channel is connected to one second material channel; the molding die is provided with a plurality of grooves, and at least two grooves are arranged side by side in a third direction perpendicular to its length direction; When the recess is located on the first mating surface, each recess is connected to a first material channel, and at least two grooves are arranged side by side and adjacent to each other in the third direction, and their corresponding recesses are connected to the same first material channel; when the recess is located on the second mating surface, each recess is connected to a second material channel, and at least two grooves are arranged side by side and adjacent to each other in the third direction, and their corresponding recesses are connected to the same second material channel.

7. The molding die according to claim 1, characterized in that, The first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each first material channel is connected to one second material channel; the molding die is provided with multiple grooves and multiple first mating portions; When the recess is located on the first mating surface, each recess is connected to a first material channel, and at least one first material channel is located between two adjacent recesses arranged in the length direction of the groove. The two adjacent recesses arranged in the length direction of the groove are respectively connected to the first material channel located between them through the corresponding recess. When the recess is located on the second mating surface, each recess is connected to a second material channel, and at least one second material channel is located between two adjacent recesses arranged in the length direction of the first mating portion; two adjacent recesses arranged in the length direction of the first mating portion are respectively connected to the second material channel located between them.

8. The molding die according to claim 1, characterized in that, The first sub-mold is provided with at least one first material channel; the second sub-mold is provided with at least one second material channel; after the first sub-mold and the second sub-mold are closed, each first material channel is connected to a second material channel, and each receiving cavity is connected to a first material channel respectively; The first mating surface is provided with a plurality of grooves, and the second mating surface is provided with a plurality of the first mating portions; all the grooves are located on the same side of the corresponding first material channel.

9. The molding die according to claim 1, characterized in that, One of the first mating surface and the second mating surface is provided with at least two elongated receiving grooves, and the other is provided with a third mating part that mates with each of the receiving grooves; After the first sub-mold and the second sub-mold are closed, each of the third mating portions abuts against one of the receiving grooves to form a cavity for receiving pins. Each of the receiving cavities has a cavity on its opposite sides, and the length direction of the cavity is parallel to the length direction of the receiving cavity.

10. The molding die according to claim 9, characterized in that, The depth of the receiving groove is the same everywhere.