Plasma processing apparatus

Abstract

The plasma processing apparatus of the present invention includes: a processing container having a plasma processing space therein for generating plasma; and a substrate support portion supporting a substrate inside the processing container. The processing container and / or the substrate support portion are configured by assembling a plurality of components, thereby having a plurality of boundaries connecting the plurality of components to each other. The plurality of boundaries include: a free radical blocking portion that blocks free radicals generated in the plasma processing space; and a sealing portion disposed at a position further away from the plasma processing space than the free radical blocking portion, blocking the passage of gas.

Description

Technical Field

[0001] This invention relates to plasma processing apparatus. Background Technology

[0002] Patent Document 1 discloses a plasma processing apparatus (plasma etching apparatus) comprising a processing container (processing chamber) for performing plasma processing, and a substrate support (base) disposed inside the processing container and holding a semiconductor wafer. This plasma processing apparatus includes various structures inside the substrate support, such as a lift mechanism for raising and lowering the substrate, wiring for an electrostatic chuck for adsorbing the substrate, and wiring for a lower electrode for guiding free radicals.

[0003] Then, in order to protect the various structures of the substrate support from the effects of free radicals in the plasma processing space, the processing container and the substrate support are equipped with high-performance sealing components that exhibit high durability against plasma and high temperatures at the boundaries between the multiple components.

[0004] <Prior art documents> <Patent Documents> Patent Document 1: Japanese Patent Application Publication No. 2010-3958 Summary of the Invention <Problem to be solved by this invention> This invention provides a technology that can reduce environmental impact and cost by reducing the number of high-performance sealing components.

[0005] <Methods for solving problems> According to one aspect of the present invention, a plasma processing apparatus is provided, comprising: a processing container having a plasma processing space therein for generating plasma; and a substrate support portion supporting a substrate inside the processing container, the processing container and / or the substrate support portion being configured by assembling a plurality of components to have a plurality of boundaries connecting the plurality of components to each other, the plurality of boundaries comprising: a free radical blocking portion blocking free radicals generated in the plasma processing space; and a sealing portion disposed at a position further away from the plasma processing space than the free radical blocking portion to block the passage of gas.

[0006] <The Effects of the Invention> One approach can reduce the number of high-performance sealing components, thereby lowering environmental impact and costs. Attached Figure Description

[0007] Figure 1 This is a diagram schematically illustrating the overall structure of a plasma processing system having a plasma processing apparatus according to one embodiment.

[0008] Figure 2It is an enlarged cross-sectional view showing the lower side of the plasma processing chamber and the substrate support.

[0009] Figure 3 (A) is an enlarged representation. Figure 2 A cross-sectional view of the seal at point IIIA. Figure 3 (B) is an enlarged representation. Figure 2 A cross-sectional view of the free radical blocking region at point IIIB. Figure 3 (C) is an enlarged cross-sectional view showing the free radical blocking part involved in the modified example. Detailed Implementation

[0010] Hereinafter, the embodiments for carrying out the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are used to denote the same components, and sometimes repeated descriptions are omitted.

[0011] Figure 1 This is a schematic diagram showing the overall structure of a plasma processing system having a plasma processing apparatus 1 according to one embodiment. First, referring to... Figure 1 Here, an example of the configuration of the plasma processing system involved in the embodiment will be described.

[0012] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 as a substrate processing device and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber (processing container) 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Additionally, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewalls 102 of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0013] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. In one embodiment, the main body portion 111 includes an electrostatic chuck 113 and a base 114. The base 114 includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck 113 is disposed on the base 114. The upper surface of the electrostatic chuck 113 has a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring.

[0014] The spray head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Additionally, the spray head 13 includes a conductive member. The conductive member of the spray head 13 functions as an upper electrode. Furthermore, in addition to the spray head 13, the gas inlet may also include one or more side gas injectors (SGIs) installed in one or more openings formed on the sidewall 102.

[0015] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the spray head 13 via a corresponding flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsedizing the flow rate of at least one process gas.

[0016] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive members of the substrate support 11 and / or the conductive members of the spray head 13. As a result, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the conductive members of the substrate support 11, a bias potential can be generated on the substrate W, introducing ionic components from the formed plasma into the substrate W.

[0017] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to be coupled to a conductive member of the substrate support 11 and / or a conductive member of the spray head 13 via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 13MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the spray head 13. The second RF generation unit 31b is configured to be coupled to a conductive member of the substrate support 11 via at least one impedance matching circuit to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400kHz to 13.56MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. One or more bias RF signals generated are supplied to the conductive members of the substrate support portion 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0018] Alternatively, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is configured to be connected to a conductive member of the substrate support portion 11 to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support portion 11. In one embodiment, the first DC signal may also be applied to other electrodes, such as electrodes within an electrostatic chuck. In one embodiment, the second DC generating unit 32b is configured to be connected to a conductive member of the spray head 13 to generate a second DC signal. The generated second DC signal is applied to the conductive member of the spray head 13. In various embodiments, at least one of the first and second DC signals may be pulsed. Furthermore, the first and second DC generating units 32a and 32b may also be included in the RF power supply 31, and the first DC generating unit 32a may replace the second RF generating unit 31b.

[0019] The exhaust system 40 can be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination thereof.

[0020] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 can be configured to control the various elements of the plasma processing apparatus 1 in a manner that performs the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may also include, for example, a computer 2a. The computer 2a may also include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control actions based on programs stored in the storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 2a3 may also communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0021] Figure 2This is an enlarged cross-sectional view showing the lower part of the plasma processing chamber 10 and the substrate support 11. Next, refer to... Figure 2 The plasma processing chamber 10 and the substrate support portion 11 will be described in further detail.

[0022] The plasma processing chamber 10 has a bottom wall 101, side walls 102 disposed on the outer periphery of the bottom wall 101, and a cylindrical wall (wall portion) 103 supporting the bottom wall 101 at its central portion. The plasma processing chamber 10 is constructed by assembling multiple components constituting the walls. Figure 2 In order to illustrate the passage 10f that connects to the gas outlet 10e, the bottom wall 101 and the side wall 102 are separated from each other, but in the parts where there is no gas outlet 10e, they are continuous (one-piece molded).

[0023] The cylinder wall 103 extends vertically and has a flange 103f on its upper side in the vertical direction. The flange 103f of the cylinder wall 103 is connected to the bottom wall 101 by fastening bolts (not shown). A sealing portion 60 is provided at the boundary 70A between the upper surface of the flange 103f and the lower surface of the bottom wall 101, which is capable of airtightly sealing the boundary 70A. The structure of the sealing portion 60 will be described in detail later.

[0024] On the other hand, as described above, the substrate support portion 11 (main body portion 111) includes an electrostatic chuck 113 and a base 114. The base 114 is disposed on the bottom wall 101 of the plasma processing chamber 10, and together with the bottom wall 101 and the cylindrical wall 103, forms an internal space 11s on the inside that accommodates various structures of the substrate support portion 11. A sealing portion 60 disposed at the boundary 70A between the bottom wall 101 and the cylindrical wall 103 hermetically seals the outside of the plasma processing chamber 10 and the internal space 11s of the substrate support portion 11.

[0025] The base 114 includes a cylindrical side portion 114a disposed on the bottom wall 101, a top portion 114b covering the upper end of the cylindrical side portion 114a, a receiving portion 114c for receiving various wirings of the substrate support portion 11, and a disk portion 114d disposed between the receiving portion 114c and the electrostatic chuck 113. That is, the base 114 is constructed by assembling multiple components. In addition, the base 114 has a baffle holding portion 115 on the outer peripheral surface of the cylindrical side portion 114a for holding the baffle 105 of the plasma processing chamber 10.

[0026] The baffle 105 is formed as an annular ring surrounding the side of the substrate support 11 in the circumferential direction, and has a plurality of through holes extending in the thickness direction in both the circumferential and radial directions. Furthermore, the baffle 105 is connected to the ground potential via the plasma processing chamber 10. This configuration allows gas supplied from the gas supply unit 20 to the plasma processing space 10s to pass through the passage 10f while simultaneously creating a sheath electric field, thereby blocking the passage of free radicals in the plasma processing space 10s. As an example, the baffle retaining part 115 is composed of a clamping member 115a, which is annular in plan view and sandwiched between the inner end of the baffle 105 and the bottom wall 101 of the plasma processing chamber 10. Alternatively, the bottom wall 101 and the clamping member 115a can also be configured to thread the baffle 105.

[0027] Furthermore, a protective member 116 is provided on the upper part of the baffle holding portion 115 of the base 114. The protective member 116 functions to protect the radially outer side of the top 114b, the receiving portion 114c, and the disc portion 114d. The protective member 116, like the clamping member 115a, is annular in plan view, and is formed, for example, of an insulating material such as quartz. In addition, the upper surface of the protective member 116 is flush with the step provided on the outer periphery of the electrostatic chuck 113, and together with the electrostatic chuck 113, forms the ring support surface 111b of the support ring assembly 112.

[0028] The cylindrical side portion 114a of the base 114 is disposed on the bottom wall 101 of the plasma processing chamber 10, and protrudes relatively shortly upward from the upper surface of the bottom wall 101 toward the plumb line. The protrusion height of the cylindrical side portion 114a is set to be higher than that of the clamping member 115a. Therefore, the upper end of the cylindrical side portion 114a is located radially inside the protective member 116 supported by the clamping member 115a.

[0029] The bottom wall 101 of the plasma processing chamber 10 and the cylindrical side portion 114a of the substrate support portion 11 (base 114) are fixed by fastening bolts (not shown). Furthermore, a free radical blocking portion 50, with a different structure from the sealing portion 60, is provided at the boundary 70D between the upper surface of the bottom wall 101 and the lower surface of the cylindrical side portion 114a. The structure of this free radical blocking portion 50 will be described in detail later.

[0030] The top 114b of the base 114 is formed into a radially wider annular shape, with its outer periphery located at the upper end of the cylindrical side portion 114a. A through-hole (not shown) for accommodating the receiving portion 114c is formed at the center of the top 114b. The internal space 11s of the substrate support portion 11 is formed by the bottom wall 101, the cylindrical wall 103, the cylindrical side portion 114a, and the top 114b of the plasma processing chamber 10.

[0031] The cylindrical side portion 114a and the top portion 114b of the base 114 are fixed by fastening bolts or the like (not shown). In addition, a free radical blocking portion 50 is provided at the boundary 70E between the upper surface of the cylindrical side portion 114a and the lower surface of the top portion 114b.

[0032] The receiving portion 114c of the base 114 includes: a support column 114c1 extending vertically from the center of the substrate support portion 11; and a horizontally extending portion 114c2 extending radially outward from the upper side of the support column 114c1 in the vertical direction. Additionally, in Figure 2 In the diagram, the support column 114c1 and the horizontally extending portion 114c2 are represented by the same shading line and are an integrated structure, but the housing portion 114c can be composed of multiple components. The horizontally extending portion 114c2 is disposed between the top 114b and the disc portion 114d, and is supported by the top 114b. Furthermore, in the housing portion 114c, the upper part of the support column 114c1 in the plumb direction and part or all of the horizontally extending portion 114c2 are composed of conductive components.

[0033] Although not shown in the diagram, the interior of the support column 114c1 has one cavity or multiple passages. The support column 114c1 houses one or more wires 35 connected to the RF power supply 31, one or more wires 36 connected to the DC power supply 32, one or more wires 37 connected to the electrostatic chuck 113, etc. The wires 35 and 36 extend radially outward from the upper part of the support column 114c1 and are electrically connected to the conductive members of the horizontal extension portion 114c2. Thus, an appropriate signal from the source RF signal, bias RF signal, first bias DC signal, second bias DC signal, etc., is applied to the horizontal extension portion 114c2. Alternatively, the housing portion 114c may be formed of an insulating material, and the wires 35 and 36 housed in the housing portion 114c may be connected to the disk portion 114d formed of a conductive material.

[0034] Then, the top 114b of the base 114 and the receiving part 114c (horizontal expansion part 114c2) are fixed by fastening bolts or the like (not shown). A free radical blocking part 50 is provided at the boundary 70F between the upper surface of the top 114b and the lower surface of the receiving part 114c.

[0035] On the other hand, a partition member 106 is provided between the cylindrical wall 103 of the plasma processing chamber 10 and the support column 114c1 of the base 114 to separate the space on the lower side of the cylindrical wall 103 from the internal space 11s. The partition member 106 is formed into a ring shape when viewed from above and is made of a material capable of blocking the movement of gas. In addition, a sealing part 60 is provided at the boundary 70B between the outer peripheral surface of the partition member 106 and the inner peripheral surface of the cylindrical wall 103. Similarly, a sealing part 60 is also provided at the boundary 70C between the inner peripheral surface of the partition member 106 and the outer peripheral surface of the support column 114c1. Thus, the plasma processing apparatus 1 can airtightly seal the lower side of the internal space 11s of the substrate support 11. In addition, the plasma processing apparatus 1 can also be a structure that allows the substrate support 11 to rotate relative to the plasma processing chamber 10. For example, a structure in which the support column 114c1 is rotated about an axis, causing the member moving upward in the direction of the plumb bob to rotate. In this case, the plasma processing device 1 can also replace the partition member 106 and be used in a magnetic fluid seal that can seal the internal space 11s while rotating the support column 114c1.

[0036] The disc portion 114d of the base 114 is disposed on the upper surface of the receiving portion 114c (horizontally unfolded portion 114c2) and supports the electrostatic chuck 113. The upper surface of the disc portion 114d and the lower surface of the electrostatic chuck 113 are firmly fixed using an adhesive with high thermal conductivity. Furthermore, the disc portion 114d has a temperature adjustment section 117 inside, which adjusts at least one of the substrate W and the ring assembly 112 to a target temperature. The temperature adjustment section 117 is configured to include a heater that heats based on an electric supply, a flow path for the flow of heat transfer fluids such as brine or gas, or a combination thereof (in...). Figure 2 (The flow path is illustrated in the figure). Alternatively, the substrate support portion 11 may also include a heat transfer gas supply portion that supplies heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0037] Furthermore, the receiving portion 114c (horizontally extended portion 114c2) and the disk portion 114d of the base 114 are fixed by fastening bolts (not shown). A free radical blocking portion 50 is provided at the boundary 70G between the upper surface of the receiving portion 114c and the lower surface of the disk portion 114d. As described above, the base 114 has multiple (four in this embodiment) free radical blocking portions 50 at the same plane position in the height direction of its outer periphery (positions that approximately overlap with the vertical direction). Therefore, the plasma processing apparatus 1 can utilize free radical blocking portions 50 with the same structure, allowing the use of common components.

[0038] An electrostatic chuck 113, located on the upper surface of the disc portion 114d of the base 114, is electrically connected to wiring 37 passing through the interior of the base 114 (receiving portion 114c, disc portion 114d). The electrostatic chuck 113 generates electrostatic force based on the electricity supplied from the wiring 37, and attracts the substrate W placed on the substrate support surface 111a. Furthermore, in Figure 2 The image shows an electrostatic chuck 113 for electrostatic adsorption of the substrate W, but it is not limited to this. The substrate support 11 can also hold the substrate W by vacuum adsorption or mechanical locking.

[0039] As described above, a step lower than the substrate support surface 111a is formed on the outer periphery of the electrostatic chuck 113. The electrostatic chuck 113 electrostatically attracts the ring assembly 112 by also supplying power to this step. Furthermore, the electrostatic chuck 113 transmits the temperature adjusted by the temperature adjustment section 117 of the disk portion 114d to the substrate W, and introduces free radicals generated in the plasma processing space 10s based on an appropriate signal from the power supply 30 to the electrostatic chuck 113 (substrate W) side.

[0040] Furthermore, the substrate support 11 is a structure housed within an internal space 11s located inside the base 114, and includes multiple pipes 117a, multiple lifters 118, etc., of the temperature adjustment unit 117. Figure 2 The diagram shows a typical example of a piping 117a and a lifter 118. Alternatively, the substrate support 11 may have wiring 37 provided in the housing 114c in the internal space 11s, and may also have a fluorescent thermometer (not shown) in the internal space 11s.

[0041] Each pipe 117a of the temperature adjustment unit 117 is connected to each pipe 117b which is disposed outside the plasma processing chamber 10 via the bottom wall 101. Each pipe 117b is connected to a cooler (not shown) or the like for adjusting the temperature of the heat transfer fluid. Furthermore, each pipe 117a extends vertically in the internal space 11s and communicates with the flow path of the disk portion 114d. Thus, the temperature adjustment unit 117 circulates the heat transfer fluid through each pipe 117a, 117b and the flow path of the disk portion 114d.

[0042] Each lifter 118 has a pin 118p extending in the vertical direction and a drive unit 118a for lifting and lowering the pin 118p. Each lifter 118 receives and transfers the substrate W between itself and a transport device (not shown) by lifting and lowering the pin 118p from the substrate support surface 111a.

[0043] Furthermore, the plasma processing chamber 10 may also include a pressure reduction section 119 for depressurizing the internal space 11s of the substrate support portion 11. The pressure reduction section 119 may include, for example, a pressure reduction pipe 119L connected to the bottom wall 101, which is connected to a pressure regulating valve (not shown) and a vacuum pump, which are separate from the exhaust system 40. By including the pressure reduction section 119 in addition to the exhaust system 40 for depressurizing the plasma processing space 10s, the plasma processing chamber 10 can smoothly depressurize the internal space 11s of the substrate support portion 11. Additionally, the pressure reduction section 119 may also be connected to the vacuum pump of the exhaust system 40.

[0044] Next, regarding the structure of the sealing part 60 and the free radical blocking part 50 provided in the plasma processing device 1, refer to... Figure 3 Please provide an explanation. Figure 3 (A) is an enlarged representation. Figure 2 A cross-sectional view of the sealing part 60 at point IIIA. Figure 3 (B) is an enlarged representation. Figure 2 A cross-sectional view of the free radical blocking portion 50 at point IIIB. Figure 3 (C) is an enlarged cross-sectional view showing the free radical blocking portion 50A involved in the modified example. Hereinafter, the sealing portion 60 is provided in... Figure 3 The sealing portion at the boundary 70A between the bottom wall 101 and the cylinder wall 103 of (A) will be used as an example for explanation, but it goes without saying that the sealing portions 60 in other locations also have the same structure. Furthermore, the free radical blocking portion 50 is provided at... Figure 3 The radical blocking portion at the boundary 70D between the bottom wall 101 and the cylindrical side portion 114a of (B) is used as an example for explanation, but it goes without saying that the radical blocking portions 50 in other parts also have the same structure.

[0045] The sealing portion 60 includes a groove 61 and a sealing member 62 housed within the groove 61. Additionally, in Figure 3 In (A), a sealing portion 60 is formed on the flange 103f of the cylinder wall 103, but the sealing portion 60 may also be provided on the bottom wall 101. In short, the sealing portion 60 may be provided on one (or both) of the two components forming the boundaries 70A to 70C.

[0046] The groove 61 of the sealing part 60 is formed opposite to the bottom wall 101 and, when viewed from above, surrounds the upper surface of the cylinder wall 103 (flange 103f) in a circular shape. The depth of the groove 61 is set to be smaller than the diameter of the sealing member 62.

[0047] The sealing member 62 is formed as an O-ring housed in an annular groove 61. When housed in the groove 61, the sealing member 62 elastically deforms by contacting the bottom wall 101 with the portion protruding from the groove 61. Thus, the sealing member 62 can airtightly seal the exterior and interior space 11s of the plasma processing chamber 10. Furthermore, in Figure 3 In (A), a solid sealing member 62 is shown in cross-section. The sealing member 62 may also be hollow in cross-section.

[0048] Here, as Figure 2 As shown, each sealing portion 60 provided in the plasma processing apparatus 1 is located away from the plasma processing space 10s. That is, each sealing portion 60 is located radially inward from the outer periphery of the substrate support portion 11 (cylindrical side portion 114a, etc.), and is provided on the opposite side from the top 114b of the base 114, separated by the internal space 11s. In other words, the sealing portion 60 is located at a position where free radicals generated in the plasma processing space 10s cannot reach and where heat from the plasma processing space 10s is difficult to transfer, thus airtightly sealing the lower vertical side of the internal space 11s.

[0049] Therefore, the sealing member 62 housed in each sealing portion 60 can be a general-purpose O-ring that has low durability against plasma and suppressed heat resistance. Specifically, the sealing member 62 can be selected from an organic compound that does not contain fluorine or silicone. Examples of materials for such a sealing member 62 include nitrile rubber, acrylic rubber, ethylene propylene rubber, and chloroprene rubber. Alternatively, the sealing member 62 can also be made of natural rubber or a combination of natural and synthetic rubber.

[0050] On the other hand, such as Figure 3 As shown in (B), the free radical blocking portion 50 also includes a groove 51 and a sealing member 52 housed inside the groove 51. Additionally, in Figure 3 In (B), a free radical blocking portion 50 is formed on the bottom wall 101, but the free radical blocking portion 50 may also be provided on the cylindrical side portion 114a. In short, the free radical blocking portion 50 may be provided on one (or both) of the two components forming the boundaries 70D to 70G.

[0051] The groove 51 of the free radical blocking part 50 is formed opposite to the cylindrical side part 114a, and when viewed from above, it surrounds the upper surface of the bottom wall 101 in a circular shape. The depth of the groove 51 is set to be smaller than the diameter of the sealing member 52.

[0052] The sealing member 52 is formed as an O-ring housed in an annular groove 51. When housed in the groove 51, the sealing member 52 elastically deforms by contacting the cylindrical side portion 114a with its protruding portion from the groove 51. Thus, the sealing member 52 can airtightly seal the exterior (passage 10f) of the substrate support 11 and the interior space 11s. Furthermore, in Figure 3 In (B), a solid sealing member 52 is shown in cross-section, but the sealing member 52 may also be hollow in cross-section.

[0053] Here, Figure 2 As shown, each free radical blocking part 50 provided in the plasma processing apparatus 1 is located closer to the plasma processing space 10s than the sealing part 60. That is, each free radical blocking part 50 is located on the outer periphery of the substrate support part 11, at a position where free radicals generated in the plasma processing space 10s may reach and where the heat of the plasma processing space 10s is easily transferred.

[0054] Therefore, the sealing member 52 housed in each free radical blocking section 50 uses a high-functionality O-ring with high plasma durability and heat resistance. Specifically, the sealing member 52 can be selected from an organic compound containing one or both of the following: fluorine, silicone, etc. Examples of materials for such a sealing member 52 include fluororubber (FKM, FPM), tetrafluoroethylene-propylene fluororubber (FPEM), and perfluoroelastomer (FFKM). Furthermore, the sealing member 52 may also be coated with a coating 53 that has plasma resistance and heat resistance.

[0055] However, since the substrate support 11 is located inside the plasma processing chamber 10, which is in a vacuum atmosphere, the internal space 11s can be evacuated (depressurized) even if it is connected to the plasma processing space 10s. Therefore, the free radical blocking part 50 may not have the function of completely sealing the internal space 11s. For example, the free radical blocking part 50 may replace the sealing member 52, and the material filling the gap between the two members (including the groove 51) may be a curing agent with plasma resistance and heat resistance, a porous material, etc.

[0056] like Figure 3As shown in (C), the free radical blocking portion 50A involved in the modified example has irregularities 55 on the bottom wall 101 and irregularities 56 on the cylindrical side portion 114a, thereby forming a labyrinthine structure in which these irregularities 55 and 56 fit together. By employing this labyrinthine structure, the free radical blocking portion 50A can also block the flow of free radicals from the plasma processing space 10s to the internal space 11s. Furthermore, the free radical blocking portion 50A can also fill the gaps between the irregularities 55 and 56 with a material used to fill these gaps (such as a curing agent with plasma resistance and heat resistance, or a porous material).

[0057] The plasma processing apparatus 1 described in this embodiment is configured essentially as described above. The plasma processing apparatus 1 places a substrate W on the substrate support surface 111a of the substrate support portion 11 and adsorbs the substrate W. Then, while supplying processing gas through the gas supply portion 20, the plasma processing apparatus 1 supplies RF power from the power supply 30 to the substrate support portion 11 and the spray head 13, thereby generating plasma in the plasma processing space for 10 seconds. Thus, the plasma processing apparatus 1 can perform appropriate plasma processing (etching, film deposition, etc.) on the substrate W.

[0058] Furthermore, the plasma processing apparatus 1 has a free radical blocking section 50 and a sealing section 60 in the plasma processing chamber 10 and the substrate support section 11. Additionally, for example, the substrate support section 11 can be depressurized to create a vacuum atmosphere in its internal space 11s via the depressurization section 119. Moreover, even when plasma is generated in the plasma processing space 10s, the plasma processing apparatus 1 can prevent free radicals from entering the internal space 11s via the free radical blocking section 50, thus maintaining the environment within the substrate support section 11 in a suitable state. Therefore, degradation of various structures within the substrate support section 11 can be significantly suppressed. Furthermore, even though the plasma processing apparatus 1 has a structure capable of preventing free radical intrusion, a common sealing member 62 is used at the point of exit from the plasma processing space 10s, thereby reducing the need for high-performance sealing members 52 and lowering environmental impact and cost.

[0059] Specifically, the substrate support 11, by providing a free radical blocking portion 50 on its outer periphery, can prevent the intrusion of free radicals that have circled around to the outer periphery. On the other hand, the sealing portion 60, by being located further inward than the free radical blocking portion 50, can more reliably suppress exposure to free radicals. Furthermore, the degradation caused by free radicals from the multiple lifters 118 housed in the internal space 11s of the substrate support 11 is also suppressed. Moreover, by providing a pressure reduction portion 119, the plasma processing apparatus 1 can quickly create a vacuum atmosphere in the internal space 11s, thereby improving the efficiency of pressure adjustment throughout the plasma processing chamber 10.

[0060] Furthermore, the respective positions of the free radical blocking portion 50 and the sealing portion 60 are not limited to the above-described embodiment and can be designed arbitrarily. For example, in the above embodiment, a structure is designed to improve the free radical blocking ability by having a free radical blocking portion 50 at the boundary 70D between the bottom wall 101 and the substrate support portion 11 (cylindrical side portion 114a). However, the boundary 70D between the bottom wall 101 and the cylindrical side portion 114a can also be a sealing portion 60 instead of a free radical blocking portion 50. This is because this part is somewhat far away from the plasma processing space 10s and is less susceptible to the influence of plasma. In addition, the free radical blocking portion 50 can also be provided at the boundary between the clamping member 115a and the protective member 116, or at the boundary between the electrostatic chuck 113 and the base 114 (disc portion 114d).

[0061] The above-disclosed implementation methods include, for example, the following methods.

[0062] [Postscript 1] A plasma processing apparatus comprising: A processing container having an internal plasma processing space for generating plasma; and The substrate support portion supports the substrate inside the processing container. The processing container and / or the substrate support are constructed by assembling multiple components, thereby having multiple boundaries that connect the multiple components to each other. The multiple boundaries have: Free radical blocking section, which blocks free radicals generated in the plasma processing space; and The sealing part is located at a position further away from the plasma processing space than the free radical blocking part, thereby blocking the passage of gas.

[0063] [Postscript 2] According to the plasma processing apparatus described in Appendix 1, wherein, The substrate support portion has the free radical blocking portion on its outer periphery.

[0064] [Postscript 3] According to the plasma processing apparatus described in Appendix 2, wherein, The substrate support portion has an internal space inside the outer periphery, and a plurality of lifting devices are housed in the internal space for raising and lowering the substrate supported on the substrate support portion.

[0065] [Postscript 4] According to the plasma processing apparatus described in Appendix 3, wherein... In addition to an exhaust system that draws in gas from the plasma processing space to reduce its pressure, the system also includes a pressure reduction unit that reduces the pressure of the internal space.

[0066] [Postscript 5] The plasma processing apparatus according to any one of Appendices 2 to 4, wherein, The sealing portion is located inside the free radical blocking portion of the substrate support portion.

[0067] [Postscript 6] The plasma processing apparatus according to any one of Appendices 2 to 5, wherein, The free radical blocking portion of the substrate support is provided in multiple locations at the same plane position in the height direction of the outer periphery.

[0068] [Postscript 7] The plasma processing apparatus according to any one of Appendices 1 to 6, wherein, The processing container has a bottom wall that secures the substrate support. The free radical blocking portion is located at the boundary between the bottom wall and the substrate support.

[0069] [Postscript 8] According to the plasma processing apparatus described in Appendix 7, wherein... The processing container has a wall portion connected to the bottom wall. The sealing portion is located at the boundary between the bottom wall and the wall portion.

[0070] [Postscript 9] According to the plasma processing apparatus described in Appendix 8, wherein... The substrate support portion has a support pillar on the inner side of the wall portion capable of accommodating wiring that can supply power, and a partition member is provided between the support pillar and the wall portion to separate the space. The sealing portion is located at the boundary between the support column and the partition member, and at the boundary between the partition member and the wall portion.

[0071] [Postscript 10] The plasma processing apparatus according to any one of Appendices 1 to 9, wherein, The free radical blocking portion has a groove and a sealing member formed of a fluorine-containing material and housed in the groove.

[0072] [Postscript 11] The plasma processing apparatus according to any one of Appendices 1 to 10, wherein, The free radical blocking portion forms a labyrinthine structure through the irregularities formed on the plurality of components.

[0073] [Postscript 12] The plasma processing apparatus according to any one of Appendices 1 to 11, wherein, The sealing portion has a groove and a sealing member formed of a fluorine-free material and housed in the groove.

[0074] The plasma processing apparatus 1 disclosed herein is illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The items described in the above embodiments can also be employed in other structures without contradiction, and furthermore, can be combined without contradiction.

[0075] The plasma processing apparatus 1 of the present invention can also be applied to any type of apparatus among Atomic Layer Deposition (ALD) apparatus, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0076] This application claims priority to basic application No. 2023-134592 filed with the Japan Patent Office on August 22, 2023, the entire contents of which are incorporated herein by reference.

[0077] Label Explanation 1: Plasma processing device 10: Plasma processing chamber 10s: Plasma processing space 11: Substrate support section 50: Free radical blocking part 60: Sealing part W: substrate.

Claims

1. A plasma processing apparatus, comprising: A processing container having an internal plasma processing space for generating plasma; and The substrate support portion supports the substrate inside the processing container. The processing container and / or the substrate support are constructed by assembling multiple components, thereby having multiple boundaries that connect the multiple components to each other. The multiple boundaries have: A free radical blocking section that blocks free radicals generated in the plasma processing space; and A sealing section, located further away from the plasma processing space than the free radical blocking section, blocks the passage of gas. The substrate support portion. The peripheral portion has the aforementioned free radical blocking portion. The outer periphery has an internal space on its inner side, and the internal space houses a plurality of lifting devices for raising and lowering the substrate supported on the substrate support portion. In addition to an exhaust system that draws in gas from the plasma processing space to reduce its pressure, the system also includes a pressure reduction unit that reduces the pressure of the internal space.

2. The plasma processing apparatus according to claim 1, wherein, The sealing portion is located inside the free radical blocking portion of the substrate support portion.

3. The plasma processing apparatus according to claim 1, wherein, The free radical blocking portion of the substrate support is provided in multiple locations at the same plane position in the height direction of the outer periphery.

4. A plasma processing apparatus, comprising: A processing container having an internal plasma processing space for generating plasma; and The substrate support portion supports the substrate inside the processing container. The processing container and / or the substrate support are constructed by assembling multiple components, thereby having multiple boundaries that connect the multiple components to each other. The multiple boundaries have: A free radical blocking section that blocks free radicals generated in the plasma processing space; and A sealing section, located further away from the plasma processing space than the free radical blocking section, blocks the passage of gas. The processing container has a bottom wall that secures the substrate support. The free radical blocking portion is located at the boundary between the bottom wall and the substrate support.

5. The plasma processing apparatus according to claim 1 or 4, wherein, The free radical blocking portion forms a labyrinthine structure through the irregularities formed on the plurality of components.

6. A plasma processing apparatus, comprising: A processing container having an internal plasma processing space for generating plasma; and The substrate support portion supports the substrate inside the processing container. The processing container and / or the substrate support are constructed by assembling multiple components, thereby having multiple boundaries that connect the multiple components to each other. The multiple boundaries have: A free radical blocking section that blocks free radicals generated in the plasma processing space; and A sealing section, located further away from the plasma processing space than the free radical blocking section, blocks the passage of gas. The free radical blocking portion forms a labyrinthine structure through the irregularities formed on the plurality of components.

7. The plasma processing apparatus according to claim 4 or 6, wherein, The substrate support portion has the free radical blocking portion on its outer periphery.

8. The plasma processing apparatus according to claim 7, wherein, The substrate support portion has an internal space inside the outer periphery, and the internal space houses a plurality of lifters for raising and lowering the substrate supported on the substrate support portion.

9. The plasma processing apparatus according to claim 8, wherein, In addition to an exhaust system that draws in gas from the plasma processing space to reduce its pressure, the system also includes a pressure reduction unit that reduces the pressure of the internal space.

10. The plasma processing apparatus according to claim 7, wherein, The sealing portion is located inside the free radical blocking portion of the substrate support portion.

11. The plasma processing apparatus according to claim 7, wherein, The free radical blocking portion of the substrate support is provided in multiple locations at the same plane position in the height direction of the outer periphery.

12. The plasma processing apparatus according to claim 1 or 6, wherein, The processing container has a bottom wall that secures the substrate support. The free radical blocking portion is located at the boundary between the bottom wall and the substrate support.

13. The plasma processing apparatus according to claim 12, wherein, The processing container has a wall portion connected to the bottom wall. The sealing portion is located at the boundary between the bottom wall and the wall portion.

14. The plasma processing apparatus according to claim 13, wherein, The substrate support portion has a support pillar on the inner side of the wall portion capable of accommodating wiring that can supply power, and a partition member is provided between the support pillar and the wall portion to separate the space. The sealing portion is located at the boundary between the support column and the partition member, and at the boundary between the partition member and the wall portion.

15. The plasma processing apparatus according to any one of claims 1, 4, and 6, wherein, The free radical blocking portion has a groove and a sealing member formed of a fluorine-containing material and housed in the groove.

16. The plasma processing apparatus according to any one of claims 1, 4, and 6, wherein, The sealing portion has a groove and a sealing member formed of a fluorine-free material and housed in the groove.

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