A chip packaging insulating material and its preparation method

CN121825177BActive Publication Date: 2026-08-14CHANGSHA YIKETE NEW MATERIALS CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-12-31
Publication Date
2026-08-14

AI Technical Summary

Technical Problem

但氮化硼表面呈惰性,与环氧树脂基体的相容性较差,易出现团聚现象,导致复合材料的力学性能和导热性能提升受限

Benefits of technology

本发明的磷基阻燃聚酯通过与环氧树脂基体的化学结合,解决了传统小分子阻燃剂相容性差、易迁移的痛点,实现长效阻燃;其含有的磷元素在高温下可催化材料炭化形成致密阻隔层,阻断火焰蔓延与热量传递;氢氧化铝受热分解释放结晶水吸收热量,同时生成氧化铝保护膜阻隔氧气,与磷基阻燃聚酯形成“炭化阻隔+降温隔氧”的协同效应。改性六方氮化硼(BN-OH/CNF)借助CNF的“桥接”作用,显著增强与环氧树脂基体的界面结合力,在材料内部均匀分散并形成连续导热通路。

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure SMS_1
    Figure SMS_1
Patent Text Reader

Abstract

This invention relates to the field of electronic packaging materials technology, and discloses a chip packaging insulating material and its preparation method. The material uses bisphenol A epoxy resin as a matrix, combined with phosphorus-based flame-retardant polyester, modified hexagonal boron nitride, aluminum hydroxide, methyltetrahydrophthalic anhydride, 1,3-adamantanediol, and antioxidant 1010, etc., and is prepared through a specific ratio and step-by-step curing process. Addressing the problems of insufficient flame retardancy and poor compatibility between boron nitride and the matrix in traditional epoxy resin-based packaging materials, this invention solves the technical problem that adding a single filler cannot simultaneously achieve insulation, mechanical, and flame-retardant properties.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This invention relates to the field of electronic packaging materials technology, specifically to a chip packaging insulating material and its preparation method. Background Technology

[0002] With the rapid development of electronic information technology, chips are evolving towards higher integration and higher power density. During operation, chips generate a significant amount of heat. If this heat cannot be dissipated in time, the chip temperature will rise, affecting its operational stability and lifespan. Simultaneously, chip packaging materials must possess excellent insulation properties to prevent safety hazards such as short circuits. Therefore, developing chip packaging insulating materials that combine high insulation, high thermal conductivity, high temperature resistance, and good mechanical properties has become a research hotspot in the field of electronic packaging.

[0003] Currently, commonly used insulating materials for chip packaging include epoxy resin-based composites, polyimide-based composites, and ceramic matrix composites. Among them, epoxy resin-based composites are widely used in chip packaging due to their advantages such as low cost, simple molding process, and good adhesion. However, traditional epoxy resin-based insulating materials have problems such as poor thermal conductivity, low heat distortion temperature, and insufficient flame retardancy, making it difficult to meet the requirements of high-power chips.

[0004] To improve the thermal conductivity of epoxy resin-based insulating materials, thermally conductive fillers such as boron nitride, alumina, and silicon carbide are typically added. Boron nitride (BN), as an excellent thermally conductive and insulating filler, possesses high thermal conductivity, good insulation properties, and high-temperature resistance, making it an ideal filler for improving the thermal conductivity of epoxy resin. However, boron nitride has an inert surface and poor compatibility with the epoxy resin matrix, easily leading to agglomeration, which limits the improvement of the mechanical and thermal conductivity properties of the composite material. Furthermore, simply adding thermally conductive fillers often fails to achieve a comprehensive balance of insulation, thermal conductivity, mechanical properties, and flame retardancy. Therefore, it is necessary to improve the overall performance of the material through filler modification and synergistic optimization of multiple components. Thus, developing chip packaging insulating materials that combine high insulation, high thermal conductivity, excellent mechanical properties, and flame retardancy is a pressing technical challenge. Summary of the Invention

[0005] Technical problems to be solved To address the shortcomings of existing technologies, this invention provides a chip packaging insulating material and its preparation method, which has good flame retardant, thermal conductivity, insulation and mechanical properties.

[0006] Technical solution To achieve the above objectives, the present invention provides the following technical solution: a chip encapsulation insulating material, comprising the following weight components: 55-65 parts by weight of bisphenol A epoxy resin, 2-4 parts by weight of phosphorus-based flame-retardant polyester, 2-3 parts by weight of modified hexagonal boron nitride, 0.5-1 parts by weight of aluminum hydroxide, 3-5 parts by weight of methyltetrahydrophthalic anhydride, 1-2 parts by weight of 1,3-adamantanediol, and 0.4-0.6 parts by weight of antioxidant 1010; Bisphenol A epoxy resin: As the matrix of the material, it provides basic adhesion, insulation and molding processability. It is the core skeleton of the material structure. Its epoxy groups can react with the curing agent to form a cross-linked network, ensuring the structural stability of the material. Phosphorus-based flame-retardant polyester: The core flame-retardant component, through its own phosphorus element, catalyzes the carbonization of materials at high temperatures to form a barrier layer. At the same time, its molecular structure can chemically react with the epoxy resin matrix, solving the problems of poor compatibility and easy migration of traditional flame retardants, and achieving long-lasting flame retardancy.

[0007] Modified hexagonal boron nitride: a high thermal conductivity filler. After surface modification, the interfacial bonding force with the matrix is ​​enhanced, which can form a continuous thermal conduction path inside the material, greatly improving the thermal conductivity of the material and helping the chip dissipate heat in time. Aluminum hydroxide: a synergistic flame retardant. When heated, it decomposes to release water of crystallization and absorb heat. At the same time, the resulting aluminum oxide protective film can block oxygen. It forms a "phosphorus-aluminum" synergistic flame retardant system with phosphorus-based flame retardant polyester and also has a certain reinforcing effect. Methyltetrahydrophthalic anhydride: as a curing agent, it reacts with bisphenol A epoxy resin to regulate the crosslinking density of the matrix, gradually forming a dense crosslinking network in the segmented curing process, thereby improving the mechanical properties and high temperature resistance of the material. 1,3-Adamantanediol: a crosslinking regulator. Its rigid adamantane structure can enhance the strength of the crosslinking network, while the hydroxyl groups can regulate the crosslinking density, allowing the material to balance rigidity and toughness and avoid being too brittle. Modified hexagonal boron nitride solves the problems of poor compatibility and agglomeration caused by the surface inertness of hexagonal boron nitride. Through the "bridging" effect of CNF, it improves the interfacial bonding force between boron nitride and epoxy resin matrix. At the same time, CNF itself can improve the mechanical properties of the material.

[0008] Furthermore, the preparation method of the phosphorus-based flame-retardant polyester is as follows: S1. Under a nitrogen atmosphere, DOPO-HQ was added to 40-45 mL of N,N-dimethylformamide solvent and stirred at 76-80 °C for 25-30 min. Then, NaOH was added and stirred for 50-60 min. Subsequently, 1,4-dichlorobenzyl chloride was added and stirred for 7-8 h. Finally, 4-vinylbenzyl chloride was added and reacted at 65-70 °C for 5-7 h. After the reaction was completed, the mixture was filtered, and isopropanol was added to precipitate the polymer. The polymer was then dried to obtain a diene-containing phosphorus monomer. By synthesizing a phosphorus-containing and diene-containing functional monomer, the high flame retardancy of the DOPO group was retained, and further modification was achieved through the diene structure. S2. Add the diene phosphorus-containing monomer to 35-45 mL of N,N-dimethylformamide solvent, stir to dissolve, then add 3-mercapto-1,2-propanediol and benzoin dimethyl ether photoinitiator, and irradiate with 365 nm ultraviolet light at 25-30℃ for 2-3 h. After the reaction is completed, centrifuge, wash and dry to obtain the tetrahydroxyphosphorus modifier; the click reaction introduces a polyhydroxy structure into the phosphorus-containing monomer, providing active sites for the subsequent copolymerization reaction with polyester monomers, and improving the compatibility of flame-retardant polyester with epoxy resin; S3. Add 2.8-3.0g of glycolide, 1.1-1.2g of ε-caprolactone, 0.12-0.15g of tetrahydroxyphosphorus modifier, and 0.2-0.26g of 1,5-pentanediol to a three-necked flask containing chloroform. Protect the mixture by purging nitrogen at 95-100℃, stir and mix, then heat to 180-190℃. Continue adding 0.012-0.015g of catalyst and react for 2-3 hours to obtain the product. Wash the product to obtain a phosphorus-based flame-retardant polyester. This synthesizes a phosphorus-based flame-retardant polyester that combines flame retardancy, compatibility, and flexibility, avoiding the migration problems of traditional small-molecule flame retardants while improving the material's impact resistance.

[0009] Further, in S1, the mass ratio of DOPO-HQ, NaOH, 1,4-dichlorobenzyl chloride, and 4-vinylbenzyl chloride is 4.81-4.85g: 1.4-1.5g: 1.63-1.74g: 1.51-1.53g.

[0010] Furthermore, in S2, the ratio of the amount of diene phosphorus-containing monomer, 3-mercapto-1,2-propanediol and benzoin dimethyl ether photoinitiator is 3.5-5 mmol: 7-10 mmol: 0.02-0.023 g.

[0011] Furthermore, in step S3, the mixing time is 20-25 minutes.

[0012] Furthermore, in S3, the catalyst is stannous octoate.

[0013] Furthermore, the preparation method of the chip encapsulation insulating material is as follows: bisphenol A epoxy resin, phosphorus-based flame-retardant polyester, modified hexagonal boron nitride, aluminum hydroxide, methyltetrahydrophthalic anhydride, 1,3-adamantanediol, and antioxidant 1010 are added to a stirrer and cured to obtain the chip encapsulation insulating material.

[0014] Furthermore, the curing conditions are: 80℃ for 2 hours, 100℃ for 1 hour, and 120℃ for 2 hours.

[0015] Beneficial technical effects The phosphorus-based flame-retardant polyester of this invention solves the problems of poor compatibility and easy migration of traditional small-molecule flame retardants by chemically bonding with the epoxy resin matrix, achieving long-lasting flame retardancy. The phosphorus element it contains can catalyze the carbonization of the material at high temperatures to form a dense barrier layer, blocking flame spread and heat transfer. Aluminum hydroxide decomposes upon heating, releasing water of crystallization to absorb heat and simultaneously generating an alumina protective film to block oxygen, forming a synergistic effect of "carbonization barrier + cooling and oxygen barrier" with the phosphorus-based flame-retardant polyester. Modified hexagonal boron nitride (BN-OH / CNF), through the "bridging" effect of CNF, significantly enhances the interfacial bonding force with the epoxy resin matrix, uniformly dispersing within the material and forming a continuous thermally conductive pathway.

[0016] This invention uses bisphenol A epoxy resin as the core matrix, providing excellent basic insulation. The synergistic effect of modified hexagonal boron nitride and phosphorus-based flame-retardant polyester components results in a material with good volume resistivity. The dense cross-linked network formed by the epoxy resin and methyltetrahydrophthalic anhydride provides the material with basic mechanical properties. The rigid structure of 1,3-adamantanediol enhances the strength of the cross-linked network, while its hydroxyl groups regulate the cross-linking density, preventing the material from becoming too brittle. Modified hexagonal boron nitride and CNF bind tightly to the matrix through interfacial interactions, acting as "reinforcing fillers," dispersing stress concentration under load, and improving the tensile strength of the material. The flexible structure of the phosphorus-based flame-retardant polyester improves the brittleness of the material and enhances its mechanical properties. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention are described clearly and completely. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the specifications and specific embodiments.

[0019] Preparation method of modified hexagonal boron nitride: Referring to the literature "Preparation and Thermal Conductivity Mechanism of Hexagonal Boron Nitride / Nanocellulose Insulating Material", a certain amount of BN-OH and CNF suspension was placed in a beaker, and deionized water was added to adjust the system concentration to 0.5wt%. The mixture was stirred on a magnetic stirrer for 30 min to disperse it evenly. Subsequently, the BN-OH / CNF mixture was poured into a plastic petri dish with a diameter of 55 mm and dried in an oven at 25℃ for 7 h. After drying, a PVDF membrane and filter paper were placed on both sides, and the mixture was dehydrated at 0.5 MPa pressure for 2 days. Finally, the material was calendered 10 times at 1 MPa pressure using a YYG-300 calender to obtain the BN-OH / CNF composite material.

[0020] 10-(2,5-Dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide (DOPO-HQ), analytical grade, Jiangyin Hanfeng Technology Co., Ltd.

[0021] Methyltetrahydrophthalic anhydride: CAS19438-64-3.

[0022] Example 1 The raw materials are accurately weighed (by weight): 55 parts bisphenol A epoxy resin, 2 parts phosphorus-based flame retardant polyester, 2 parts modified hexagonal boron nitride, 0.5 parts aluminum hydroxide, 3 parts methyltetrahydrophthalic anhydride, 1 part 1,3-adamantanediol, and 0.4 parts antioxidant 1010.

[0023] Preparation of phosphorus-based flame-retardant polyester: S1 (Synthesis of phosphorus-containing diene monomer): Under a nitrogen atmosphere, 4.81 g DOPO-HQ was added to 40 mL N,N-dimethylformamide and stirred at 76 °C for 25 min; 1.4 g NaOH was added and stirred for 50 min; 1.63 g 1,4-dichlorobenzyl was added and stirred for 7 h; 1.51 g 4-vinylbenzyl chloride was added and reacted at 65 °C for 5 h; after filtration, isopropanol was added to precipitate the product, and the product was dried to obtain the phosphorus-containing diene monomer.

[0024] S2 (Preparation of tetrahydroxyphosphorus-based modifier): 3.5 mmol of diene phosphorus-containing monomer was added to 35 mL of N,N-dimethylformamide, dissolved, and then 7 mmol of 3-mercapto-1,2-propanediol and 0.02 g of benzoin dimethyl ether were added; the mixture was irradiated with 365 nm ultraviolet light at 25 °C for 2 h; centrifuged, washed and dried to obtain the tetrahydroxyphosphorus-based modifier.

[0025] S3 (copolymerization): 2.8g glycolide, 1.1g ε-caprolactone, 0.12g tetrahydroxyphosphoric modifier, and 0.2g 1,5-pentanediol were added to a chloroform three-necked flask and stirred under nitrogen at 95°C for 20 min; the temperature was raised to 180°C, and 0.012g stannous octoate was added, and the reaction was carried out for 2 h; the mixture was washed with ethanol and dried to obtain phosphorus-based flame-retardant polyester.

[0026] Material forming: Add all raw materials to a mixer and stir at 800 rpm for 30 minutes. Then cure at 80°C for 2 hours, 100°C for 1 hour, and 120°C for 2 hours to obtain the chip encapsulation insulating material.

[0027] Example 2 The raw materials are weighed as follows: 65 parts by weight of bisphenol A epoxy resin, 4 parts by weight of phosphorus-based flame-retardant polyester, 3 parts by weight of modified hexagonal boron nitride, 1 part by weight of aluminum hydroxide, 5 parts by weight of methyltetrahydrophthalic anhydride, 2 parts by weight of 1,3-adamantanediol, and 0.6 parts by weight of antioxidant 1010.

[0028] The preparation method of phosphorus-based flame-retardant polyester is as follows: S1. Under a nitrogen atmosphere, 4.85 g of DOPO-HQ was added to 45 mL of N,N-dimethylformamide solvent and stirred at 80 °C for 30 min. Then, 1.5 g of NaOH was added and stirred for 60 min. Subsequently, 1.74 g of 1,4-dichlorobenzyl was added and stirred for 8 h. Finally, 1.53 g of 4-vinylbenzyl chloride was added and reacted at 70 °C for 7 h. After the reaction was completed, the mixture was filtered, and isopropanol was added to precipitate the polymer. The polymer was dried to obtain a diene phosphorus-containing monomer. S2. Add 5 mmol of diene phosphorus-containing monomer to 45 mL of N,N-dimethylformamide solvent, stir to dissolve, then add 10 mmol of 3-mercapto-1,2-propanediol and 0.023 g of benzoin dimethyl ether photoinitiator, irradiate with 365 nm ultraviolet light at 30 °C for 3 h, centrifuge after reaction, wash and dry to obtain tetrahydroxyphosphoric acid modifier; S3. Add 3.0g of glycolide, 1.2g of ε-caprolactone, 0.15g of tetrahydroxyphosphoric acid modifier and 0.26g of 1,5-pentanediol to a three-necked flask containing chloroform. Protect the mixture with nitrogen gas at 100°C and stir for 25 minutes. Then raise the temperature to 190°C and add 0.015g of stannous octoate. React for 3 hours to obtain the product. Wash the product to obtain phosphorus-based flame-retardant polyester.

[0029] Material forming: Add all raw materials to a mixer and stir at 800 rpm for 30 minutes. Then cure at 80°C for 2 hours, 100°C for 1 hour, and 120°C for 2 hours to obtain the chip encapsulation insulating material.

[0030] Example 3 The raw materials are weighed as follows: 60 parts by weight of bisphenol A epoxy resin, 3 parts by weight of phosphorus-based flame-retardant polyester, 2.5 parts by weight of modified hexagonal boron nitride, 0.75 parts by weight of aluminum hydroxide, 4 parts by weight of methyltetrahydrophthalic anhydride, 1.5 parts by weight of 1,3-adamantanediol, and 0.5 parts by weight of antioxidant 1010.

[0031] The preparation method of phosphorus-based flame-retardant polyester is as follows: S1. Under a nitrogen atmosphere, 4.83 g of DOPO-HQ was added to 43 mL of N,N-dimethylformamide solvent and stirred at 78 °C for 27 min. Then, 1.45 g of NaOH was added and stirred for 55 min. Subsequently, 1.685 g of 1,4-dichlorobenzyl was added and stirred for 8 h. Finally, 1.52 g of 4-vinylbenzyl chloride was added and reacted at 68 °C for 6 h. After the reaction was completed, the mixture was filtered, and isopropanol was added to precipitate the polymer. The polymer was dried to obtain a diene phosphorus-containing monomer. S2. Add 4.25 mmol of diene phosphorus-containing monomer to 40 mL of N,N-dimethylformamide solvent, stir to dissolve, then add 8.5 mmol of 3-mercapto-1,2-propanediol and 0.021 g of benzoin dimethyl ether photoinitiator, irradiate with 365 nm ultraviolet light at 25 °C for 2.5 h, centrifuge after reaction, wash and dry to obtain tetrahydroxyphosphoric acid modifier; S3. 2.9 g of glycolide, 1.15 g of ε-caprolactone, 0.13 g of tetrahydroxyphosphoric acid modifier and 0.23 g of 1,5-pentanediol were added to a three-necked flask containing chloroform. The mixture was stirred and mixed for 22 min at 98 °C under nitrogen protection. The temperature was then raised to 185 °C, and 0.013 g of stannous octoate was added. The reaction was carried out for 2.5 h to obtain the product. The product was then washed to obtain phosphorus-based flame-retardant polyester.

[0032] Material forming: Add all raw materials to a mixer and stir at 800 rpm for 30 minutes. Then cure at 80°C for 2 hours, 100°C for 1 hour, and 120°C for 2 hours to obtain the chip encapsulation insulating material.

[0033] Comparative Example 1 The difference between this comparative example and Example 3 is that no phosphorus-based flame-retardant polyester was added.

[0034] Comparative Example 2 The difference between this comparative example and Example 3 is that unmodified hexagonal boron nitride was used instead of modified hexagonal boron nitride.

[0035] Comparative Example 3 The difference between this comparative example and Example 3 is that 1,3-adamantanediol was not added.

[0036] Performance testing The limiting oxygen index was tested according to the UL94 vertical burning test and oxygen index tester; the thermal conductivity was tested according to the ASTM E1461 test examples and comparative examples; the volume resistivity was tested according to GB / T31838.2-2019; the breakdown voltage was tested according to GB / T1408.1-2016; and the tensile properties of the material were tested according to GB / T1040.2-2022.

[0037]

[0038] As shown in Table 1, Comparative Example 1, lacking phosphorus-based flame-retardant polyester, experienced a drop in vertical flammability rating from V-0 to V-1, and a sharp decrease in limiting oxygen index from 33.8% to 24.4%. This is because the phosphorus element in the phosphorus-based flame-retardant polyester catalyzes the carbonization of the material at high temperatures, forming a barrier layer, and reacts chemically with the epoxy resin matrix to achieve long-lasting flame retardancy. Without this component, relying solely on aluminum hydroxide as a single synergistic flame retardant cannot achieve the high flame retardancy standard. The tensile strength of Comparative Example 1 is lower than that of Example 3, indicating that the phosphorus-based flame-retardant polyester is not only a flame-retardant component, but its molecular structure can also crosslink with the matrix, improving the mechanical properties of the material. Simultaneously, the molecular chains of the phosphorus-based flame-retardant polyester can form a dense crosslinked network with the epoxy resin matrix through chemical bonding, playing a "fixing" role for the modified hexagonal boron nitride particles, reducing the gaps between thermally conductive particles, and ensuring the continuity of the thermal conduction path. In Comparative Example 1, lacking this component, the density of the crosslinked network slightly decreased, and trace voids appeared between the modified hexagonal boron nitride particles, leading to a slight increase in thermal resistance and a decrease in thermal conductivity. Phosphorus-based flame-retardant polyester participates in the crosslinking reaction of epoxy resin, filling micropores and defects in the crosslinking network and reducing "channels" for charge migration. In Comparative Example 1, the absence of this component reduces the integrity of the crosslinking network, resulting in more micropores within the material. These pores become weak points for charge migration, leading to a decrease in volume resistivity. Phosphorus-based flame-retardant polyester can enhance the interfacial bonding strength between epoxy resin and modified hexagonal boron nitride and aluminum hydroxide, preventing interfacial separation and breakdown channels under high voltage. In Comparative Example 1, the lack of this component weakens the interfacial bonding, making it prone to forming micro-gaps at the interface under high voltage, which become breakdown paths, leading to a decrease in breakdown voltage.

[0039] Comparative Example 2, using unmodified hexagonal boron nitride, exhibited a lower thermal conductivity compared to Example 3. This is because the surface of unmodified hexagonal boron nitride is inert, resulting in poor compatibility with the epoxy resin matrix, easy agglomeration, and an inability to form a continuous thermal conductive pathway. In contrast, modified hexagonal boron nitride, through the CNF (Chemical Network of Fluid) bridging effect, improved interfacial bonding and constructed a highly efficient thermally conductive network. The volume resistivity, breakdown voltage, and tensile strength of Comparative Example 2 were significantly lower than those of Example 3, indicating that the agglomeration of unmodified hexagonal boron nitride disrupted the uniformity of the material's microstructure, reducing both insulation reliability and mechanical load-bearing capacity.

[0040] Comparative Example 3, lacking 1,3-adamantanediol, exhibited a lower tensile strength compared to Example 3. This is because the rigid adamantane structure of 1,3-adamantanediol enhances the crosslinking network strength, and the hydroxyl groups regulate the crosslinking density, allowing the material to balance rigidity and toughness. Without this component, the crosslinking network strength is insufficient, leading to a decrease in mechanical properties. The thermal conductivity and insulation properties of Comparative Example 3 were slightly lower than those of Example 3, indicating that optimizing the crosslinking density has a synergistic effect on improving the overall performance of the material, avoiding the sacrifice of other properties caused by optimizing a single property.

[0041] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0042] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A chip packaging insulating material, characterized in that, It includes the following components by weight: 55-65 parts by weight of bisphenol A epoxy resin, 2-4 parts by weight of phosphorus-based flame-retardant polyester, 2-3 parts by weight of modified hexagonal boron nitride, 0.5-1 parts by weight of aluminum hydroxide, 3-5 parts by weight of methyltetrahydrophthalic anhydride, 1-2 parts by weight of 1,3-adamantanediol, and 0.4-0.6 parts by weight of antioxidant 1010; The preparation method of the phosphorus-based flame-retardant polyester is as follows: S1. Under a nitrogen atmosphere, DOPO-HQ was added to 40-45 mL of N,N-dimethylformamide solvent and stirred at 76-80 °C for 25-30 min. Then, NaOH was added and stirred for 50-60 min. Subsequently, 1,4-dichlorobenzyl chloride was added and stirred for 7-8 h. Finally, 4-vinylbenzyl chloride was added and reacted at 65-70 °C for 5-7 h. After the reaction was completed, the mixture was filtered, and isopropanol was added to precipitate the polymer. The polymer was then dried to obtain a diene phosphorus-containing monomer. S2. Add the diene phosphorus-containing monomer to 35-45 mL of N,N-dimethylformamide solvent, stir to dissolve, then add 3-mercapto-1,2-propanediol and benzoin dimethyl ether photoinitiator, irradiate with 365 nm ultraviolet light at 25-30℃ for 2-3 h, centrifuge after the reaction is completed, wash and dry to obtain tetrahydroxyphosphoric acid modifier; S3. Add 2.8-3.0g of glycolide, 1.1-1.2g of ε-caprolactone, 0.12-0.15g of tetrahydroxyphosphorus modifier and 0.2-0.26g of 1,5-pentanediol to a three-necked flask containing chloroform. Protect the mixture with nitrogen gas at 95-100℃, stir and mix, raise the temperature to 180-190℃, and continue to add 0.012-0.015g of catalyst. React for 2-3 hours to obtain the product, and then wash it to obtain phosphorus-based flame-retardant polyester. The modified hexagonal boron nitride is prepared as follows: A suspension of BN-OH and CNF is placed in a beaker, and deionized water is added to adjust the system concentration to 0.5 wt%. The mixture is stirred on a magnetic stirrer for 30 minutes to ensure uniform dispersion. Then, the BN-OH / CNF mixture is poured into a 55 mm diameter plastic petri dish and dried in a 25°C oven for 7 hours. After drying, a PVDF membrane and filter paper are placed on each side, and the mixture is dehydrated for 2 days under 0.5 MPa pressure. Finally, the material is calendered 10 times under 1 MPa pressure using a YYG-300 calender to obtain BN-OH. OH / CNF composite material.

2. The chip packaging insulating material according to claim 1, characterized in that, In S1, the mass ratio of DOPO-HQ, NaOH, 1,4-dichlorobenzyl chloride, and 4-vinylbenzyl chloride is 4.81-4.85g: 1.4-1.5g: 1.63-1.74g: 1.51-1.53g.

3. The chip packaging insulating material according to claim 1, characterized in that, In S2, the ratio of the amount of diene phosphorus-containing monomer, 3-mercapto-1,2-propanediol and benzoin dimethyl ether photoinitiator is 3.5-5 mmol: 7-10 mmol: 0.02-0.023 g.

4. The chip packaging insulating material according to claim 1, characterized in that, In step S3, the stirring and mixing time is 20-25 minutes.

5. The chip packaging insulating material according to claim 1, characterized in that, In S3, the catalyst is stannous octoate.

6. A method for preparing a chip packaging insulating material as described in any one of claims 1-5, characterized in that, The preparation method of the chip encapsulation insulating material is as follows: Bisphenol A epoxy resin, phosphorus-based flame-retardant polyester, modified hexagonal boron nitride, aluminum hydroxide, methyltetrahydrophthalic anhydride, 1,3-adamantanediol, and antioxidant 1010 are added to a stirrer and cured to obtain the chip encapsulation insulating material.

7. The method for preparing the chip packaging insulating material according to claim 6, characterized in that, The curing conditions are: 80℃ for 2 hours, 100℃ for 1 hour, and 120℃ for 2 hours.

Citation Information

Patent Citations

  • Enhanced ceramic zinc borate nano flame retardant and preparation method thereof

    CN119264520A

  • Epoxy resin composite insulating material as well as preparation method and application thereof

    CN121086463A