Gate drive circuit and gate drive method for hybrid boost converter
By using the gate drive circuit of the hybrid boost converter, isolation technology is used to convert low-voltage domain signals into high-voltage domain signals, solving the problem that Cuk converters cannot be applied to high-voltage domains. This achieves voltage conversion and circuit module isolation in the high-voltage domain, ensuring the normal operation of the converter.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HANGZHOU YUANXIN SEMICON TECH CO LTD
- Filing Date
- 2026-03-11
- Publication Date
- 2026-07-14
AI Technical Summary
Cuk converters cannot be used in the high-voltage domain and cannot perform voltage conversion in the high-voltage domain.
A gate drive circuit for a hybrid boost converter is provided, which converts the gate drive signal in the low-voltage domain into a drive signal in the high-voltage domain through isolation, thereby realizing the alternating control of the high-side and low-side power transistors. The circuit includes two methods: chip junction isolation and capacitor isolation.
The isolation between the low-voltage circuit module and the high-voltage drive module is achieved, ensuring the normal operation of the hybrid boost converter in different voltage domains and avoiding the problem of large-capacity capacitors occupying PCB area.
Smart Images

Figure CN121841076B_ABST